JP2009115835A5 - - Google Patents

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JP2009115835A5
JP2009115835A5 JP2007285127A JP2007285127A JP2009115835A5 JP 2009115835 A5 JP2009115835 A5 JP 2009115835A5 JP 2007285127 A JP2007285127 A JP 2007285127A JP 2007285127 A JP2007285127 A JP 2007285127A JP 2009115835 A5 JP2009115835 A5 JP 2009115835A5
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resin composition
photosensitive resin
negative photosensitive
mass
group
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JP2007285127A
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JP2009115835A (en
JP5099336B2 (en
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Priority claimed from JP2007285127A external-priority patent/JP5099336B2/en
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Claims (7)

(A)ポリフェニレンエーテル100質量部に対して、(B)酸触媒の存在下、架橋反応を起こすCHOR基(ここで、Rは炭素数1〜4のアルキル基を示す。)を有する架橋剤10〜40質量部、(C)光酸発生剤2〜20質量部、および(D)溶媒200〜4000質量部を含むことを特徴とするネガ型感光性樹脂組成物。 (A) Crosslinking having 100 parts by mass of polyphenylene ether and (B) a CH 2 OR group that causes a crosslinking reaction in the presence of an acid catalyst (wherein R represents an alkyl group having 1 to 4 carbon atoms). A negative photosensitive resin composition comprising 10 to 40 parts by mass of an agent, (C) 2 to 20 parts by mass of a photoacid generator, and (D) 200 to 4000 parts by mass of a solvent. 上記光酸発生剤がナフタレン核またはアントラセン核を有する光酸発生剤であることを特徴とする請求項1に記載のネガ型感光性樹脂組成物。The negative photosensitive resin composition according to claim 1, wherein the photoacid generator is a photoacid generator having a naphthalene nucleus or an anthracene nucleus. (A)ポリフェニレンエーテルが下記一般式(1)で表される繰り返し単位を有するポリフェニレンエーテルであることを特徴とする請求項1又は2に記載のネガ型感光性樹脂組成物。
Figure 2009115835
(上記一般式(1)で、Rは水素、炭素数1〜4のアルキル基、またはフェニル基であり、それぞれ同じであっても異なっていてもよい。nは10〜5000である。)
(A) The negative photosensitive resin composition according to claim 1 or 2 , wherein the polyphenylene ether is a polyphenylene ether having a repeating unit represented by the following general formula (1).
Figure 2009115835
(In the above general formula (1), R 0 is hydrogen, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, which may be the same or different. N is 10 to 5000.)
上記一般式(1)で、Rがメチル基であることを特徴とする請求項に記載のネガ型感光性樹脂組成物。 In the said General formula (1), R0 is a methyl group, The negative photosensitive resin composition of Claim 3 characterized by the above-mentioned. CHOR基を有する架橋剤のRがメチル基であることを特徴とする請求項1〜のいずれかに記載のネガ型感光性樹脂組成物。 Negative photosensitive resin composition according to any one of claims 1 to 4, R a crosslinking agent having a CH 2 OR group is characterized by a methyl group. 請求項1〜のいずれかに記載のネガ型感光性樹脂組成物を基板に塗布する工程・露光する工程・露光後ベークする工程・現像する工程・熱処理する工程からなる耐熱性を有する硬化レリーフパターンの製造方法。 A cured relief having heat resistance comprising a step of applying the negative photosensitive resin composition according to any one of claims 1 to 5 to a substrate, a step of exposing, a step of baking after exposure, a step of developing, and a step of heat treatment. Pattern manufacturing method. 請求項に記載の製造方法により得られた硬化レリーフパターンを有してなる半導体装置。 A semiconductor device having a cured relief pattern obtained by the manufacturing method according to claim 6 .
JP2007285127A 2007-11-01 2007-11-01 Negative photosensitive resin composition Expired - Fee Related JP5099336B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007285127A JP5099336B2 (en) 2007-11-01 2007-11-01 Negative photosensitive resin composition

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Application Number Priority Date Filing Date Title
JP2007285127A JP5099336B2 (en) 2007-11-01 2007-11-01 Negative photosensitive resin composition

Publications (3)

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JP2009115835A JP2009115835A (en) 2009-05-28
JP2009115835A5 true JP2009115835A5 (en) 2010-12-09
JP5099336B2 JP5099336B2 (en) 2012-12-19

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5656413B2 (en) 2009-01-30 2015-01-21 富士フイルム株式会社 Negative resist pattern forming method, developer and negative chemically amplified resist composition used therefor, and resist pattern
JP5520590B2 (en) * 2009-10-06 2014-06-11 富士フイルム株式会社 Pattern forming method, chemically amplified resist composition, and resist film
JP5267415B2 (en) * 2009-10-14 2013-08-21 Jsr株式会社 Resin composition and use thereof
JP5723626B2 (en) * 2010-02-19 2015-05-27 富士フイルム株式会社 Pattern forming method, chemically amplified resist composition, and resist film
JP5771361B2 (en) * 2010-04-22 2015-08-26 富士フイルム株式会社 Pattern formation method, chemically amplified resist composition, and resist film
CN110032040B (en) * 2018-01-12 2020-09-22 中国科学院化学研究所 Chemical amplification glue composition and application thereof in ultraviolet photoetching
CN115785455B (en) * 2022-12-02 2023-10-10 广东粤港澳大湾区黄埔材料研究院 Polyphosphate film-forming resin and photoresist composition
CN115959974B (en) * 2022-12-28 2024-05-28 天津泰合利华材料科技有限公司 Preparation method of 3,3', 5' -tetramethoxymethyl diphenyl diphenol

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001033964A (en) * 1999-07-15 2001-02-09 Hitachi Chem Co Ltd Negative type photosensitive resin composition, production of pattern and electronic parts
JP2002251014A (en) * 2001-02-27 2002-09-06 Sumitomo Chem Co Ltd Chemical amplification type resist composition
JP4501390B2 (en) * 2003-09-29 2010-07-14 日本合成化学工業株式会社 Blue-violet semiconductor laser photosensitive image forming material

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