JP2009115524A - Process for producing intermediate structure, and inspection apparatus - Google Patents

Process for producing intermediate structure, and inspection apparatus Download PDF

Info

Publication number
JP2009115524A
JP2009115524A JP2007286929A JP2007286929A JP2009115524A JP 2009115524 A JP2009115524 A JP 2009115524A JP 2007286929 A JP2007286929 A JP 2007286929A JP 2007286929 A JP2007286929 A JP 2007286929A JP 2009115524 A JP2009115524 A JP 2009115524A
Authority
JP
Japan
Prior art keywords
glass substrate
conductive
substrate
circuit board
intermediate structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007286929A
Other languages
Japanese (ja)
Inventor
Shigekazu Komatsu
茂和 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007286929A priority Critical patent/JP2009115524A/en
Priority to PCT/JP2008/069516 priority patent/WO2009060755A1/en
Publication of JP2009115524A publication Critical patent/JP2009115524A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00Re-forming shaped glass
    • C03B23/26Punching reheated glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/02Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing by fusing glass directly to metal
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07378Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4046Through-connections; Vertical interconnect access [VIA] connections using auxiliary conductive elements, e.g. metallic spheres, eyelets, pieces of wire
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10378Interposers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1189Pressing leads, bumps or a die through an insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To produce an intermediate substrate by forming a conducting path simply and properly on a thick glass substrate, in an inspection device. <P>SOLUTION: First, a plurality of conductive pins 31 are provided upright on a board 170 for standing pins. The glass substrate A is housed in a vessel 90 in a producing apparatus. The board 170, on which the pins have been stood is placed opposite to the glass substrate A in the vessel 90 so that the conductive pins 31 on the board 170 for erecting the pins face the glass substrate A side. The glass substrate A in the vessel 90 is heated and melted. The board on which the pins have been erected is moved toward the glass substrate A side, to allow the conductive pins on the board 170 for erecting the pins to be inserted into the molten glass substrate A. In such a state where the conductive pins 31 are inserted into the glass substrate A, the glass substrate A is cooled and solidified. The board 170 for making the pins stand erect is removed from the conductive pins 31. The obverse and reverse surfaces of the glass substrate A are polished. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、検査装置における中間構造体の製造方法及び検査装置に関する。   The present invention relates to an intermediate structure manufacturing method and an inspection apparatus in an inspection apparatus.

例えば半導体ウェハ上に形成されたIC、LSIなどの電子回路の電気的特性の検査は、検査装置により行われる。上記検査装置は、通常、上下方向に弾性を有する複数のプローブピンと、各プローブピンに電気的特性の検査の電気信号を送る回路基板と、そのプローブピンと回路基板との間に配置され、プローブピンを支持し、プローブピンと回路基板との間を電気的に導通させるインターポーザ等を有している。そして、検査装置による電気的特性の検査は、プローブピンを被検査体であるウェハの電極に接触させることにより行われている(特許文献1参照)。   For example, inspection of electrical characteristics of electronic circuits such as IC and LSI formed on a semiconductor wafer is performed by an inspection apparatus. The inspection apparatus is usually arranged between a plurality of probe pins having elasticity in the vertical direction, a circuit board for sending an electrical signal for inspection of electrical characteristics to each probe pin, and between the probe pins and the circuit board. And an interposer that electrically connects the probe pin and the circuit board. The inspection of the electrical characteristics by the inspection apparatus is performed by bringing the probe pin into contact with the electrode of the wafer that is the object to be inspected (see Patent Document 1).

ところで、近年、ウェハ上の電子回路の微細化に応じて、プローブピンなどの接触子同士の間隔の狭ピッチ化が図られている。これにより、例えば隣り合う接触子同士の衝突を防止するため、例えば上下方向の寸法が短い接触子が用いられることがある。この場合、例えば検査時に接触子とウェハとを接触させたときに、上部の回路基板とウェハとの距離が短くなる。このため、例えばウェハが回路基板に対し斜めになったり、或いは回路基板が熱や力により歪んだ場合に、ウェハの外縁部が回路基板に接触する恐れがある。そこで、回路基板とウェハとの間にあるインターポーザの厚みを厚くして、回路基板とウェハとの接触を防止することが考えられる。   Incidentally, in recent years, according to the miniaturization of electronic circuits on the wafer, the pitch between the contacts such as probe pins has been reduced. Thereby, in order to prevent collision between adjacent contacts, for example, a contact having a short vertical dimension may be used. In this case, for example, when the contact is brought into contact with the wafer during inspection, the distance between the upper circuit board and the wafer is shortened. For this reason, for example, when the wafer is inclined with respect to the circuit board or the circuit board is distorted by heat or force, the outer edge of the wafer may come into contact with the circuit board. Accordingly, it is conceivable to increase the thickness of the interposer between the circuit board and the wafer to prevent contact between the circuit board and the wafer.

また、接触子が短くなって、接触子の上下方向の可動範囲が小さくなった場合、インターポーザの歪みが接触子とウェハとの接触状態に大きく影響する。このため、インターポーザの強度と平坦度を十分に確保する必要がある。この点からもインターポーザの厚みを厚くすることが求められる。   Further, when the contact is shortened and the vertical movable range of the contact is reduced, the distortion of the interposer greatly affects the contact state between the contact and the wafer. For this reason, it is necessary to ensure sufficient strength and flatness of the interposer. From this point, it is required to increase the thickness of the interposer.

インターポーザは、シリコン基板にリソグラフィ技術を使って形成することもできる。しかし、シリコン基板は、通常800μm程度で厚みが薄いものであり、これを厚くすることは、技術的或いはコスト的に難しい。   The interposer can also be formed on the silicon substrate using a lithography technique. However, the silicon substrate is usually about 800 μm and thin, and it is difficult to increase the thickness technically or costly.

特開2007−155553号公報JP 2007-155553 A

そこで、インターポーザに、厚みを確保できるガラス基板を用いることが提案できる。しかしながら、厚いガラス基板の内部に導電路を施してインターポーザに加工する技術は、未だ具体化されておらず、実現されていない。ガラス基板に厚み方向に貫通する導電路を施す方法として、例えばドリル加工などの機械加工により貫通孔を形成し、その貫通孔に電鋳により導電性材料を埋設することが考えられるが、電鋳により厚いガラス基板内に導電性材料を隙間なく埋設することは技術的に難しく、この方法は現実的ではない。   Therefore, it can be proposed to use a glass substrate that can ensure the thickness for the interposer. However, a technique for forming a conductive path inside a thick glass substrate and processing it into an interposer has not yet been realized and has not been realized. As a method of providing a conductive path that penetrates the glass substrate in the thickness direction, for example, a through hole may be formed by machining such as drilling, and a conductive material may be embedded in the through hole by electroforming. It is technically difficult to embed a conductive material in a thicker glass substrate without gaps, and this method is not practical.

本発明は、かかる点に鑑みてなされたものであり、厚みのあるガラス基板に簡単かつ適正に導電路を形成して、インターポーザなどの中間構造体を製造することをその目的とする。   This invention is made | formed in view of this point, The objective is to form an intermediate structure body, such as an interposer, by forming a conductive path simply and appropriately on a thick glass substrate.

上記目的を達成するための本発明は、電気的特性の検査が行われる被検査体に接触する接触体と、前記接触体に電気的特性の検査のための電気信号を送る回路基板を有する検査装置において、前記接触体と前記回路基板との間に配置され、前記接触体を支持し、前記接触体と前記回路基板とを電気的に導通させる中間構造体の製造方法であって、ピン立て基板に形成された複数のピン立て孔に、導電性ピンを立設する工程と、上面が開口した容器に、中間構造体の基材となるガラス基板を収容する工程と、前記ピン立て基板の導電性ピンが前記ガラス基板側に向くように、前記ピン立て基板を前記容器内のガラス基板に対向配置する工程と、前記容器内のガラス基板を加熱し、前記ガラス基板を溶融する工程と、前記ピン立て基板を前記ガラス基板側に近づけて、前記ピン立て基板の導電性ピンを前記溶融したガラス基板内に挿入する工程と、前記導電性ピンが前記ガラス基板に挿入された状態で、前記ガラス基板を冷却し前記ガラス基板を固化する工程と、前記ピン立て基板を前記導電性ピンから取り外す工程と、前記ガラス基板の表裏面を研磨する工程と、を有することを特徴とする。   In order to achieve the above object, the present invention is directed to an inspection having a contact body that comes into contact with an object to be inspected for electrical characteristics, and a circuit board that sends an electrical signal to the contact body for inspection of electrical characteristics. An apparatus for manufacturing an intermediate structure that is disposed between the contact body and the circuit board, supports the contact body, and electrically connects the contact body and the circuit board. A step of erecting conductive pins in a plurality of pin stand holes formed in the substrate, a step of accommodating a glass substrate serving as a base material of an intermediate structure in a container whose upper surface is opened, and A step of disposing the pin stand substrate facing the glass substrate in the container so that the conductive pins face the glass substrate side, a step of heating the glass substrate in the container, and melting the glass substrate; The pin stand substrate is Close to the substrate side, inserting the conductive pins of the pin stand substrate into the molten glass substrate, and cooling the glass substrate with the conductive pins inserted into the glass substrate. The method includes a step of solidifying the substrate, a step of removing the pin stand substrate from the conductive pins, and a step of polishing the front and back surfaces of the glass substrate.

本発明によれば、導電性ピンをガラス基板に挿入して導電路を形成できるので、厚みのあるガラス基板に簡単かつ適正に導電路を形成できる。また、ガラス基板の表裏面を研磨して中間構造体が製造されるので、平坦度の高い中間構造体を製造できる。これにより、中間構造体に支持される接触体と被検査体との接触を安定させ、電気的特性の検査を安定して行うことができる。   According to the present invention, since the conductive path can be formed by inserting the conductive pin into the glass substrate, the conductive path can be easily and appropriately formed on the thick glass substrate. Moreover, since the intermediate structure is manufactured by polishing the front and back surfaces of the glass substrate, an intermediate structure with high flatness can be manufactured. As a result, the contact between the contact body supported by the intermediate structure and the object to be inspected can be stabilized, and the electrical characteristics can be inspected stably.

前記中間構造体の製造方法において、前記ガラス基板の表裏面に、前記導電性ピンと電気的に導通する電極をそれぞれ形成する工程をさらに有するようにしてもよい。   The method for manufacturing the intermediate structure may further include a step of forming electrodes that are electrically connected to the conductive pins on the front and back surfaces of the glass substrate.

前記ガラス基板の電極は、表面と裏面とでピッチが異なっていてもよい。   The electrodes of the glass substrate may have different pitches on the front surface and the back surface.

前記ガラス基板の被検査体側の面には、シート状の前記接触体が取り付けられ、当該シート状の接触体は、前記導電性ピンと電気的に導通する複数の導電部と当該導電部相互間を接続する絶縁部により構成され、前記導電部は、弾性を有し、シートを厚み方向に貫通し、被検査体側に突出していてもよい。   The sheet-like contact body is attached to the surface of the glass substrate on the side to be inspected, and the sheet-like contact body includes a plurality of conductive portions that are electrically connected to the conductive pins and the conductive portions. It is comprised by the insulating part to connect, The said electroconductive part has elasticity, may penetrate the sheet | seat in the thickness direction, and may protrude to the to-be-inspected object side.

また、前記ガラス基板の回路基板側の面には、シート状の接続体が取り付けられ、当該シート状の接続体は、前記導電性ピンと電気的に導通する複数の導電部と当該導電部相互間を接続する絶縁部により構成され、前記導電部は、弾性を有し、シートを厚み方向に貫通し、前記回路基板側に突出していてもよい。   In addition, a sheet-like connection body is attached to the surface of the glass substrate on the circuit board side, and the sheet-like connection body includes a plurality of conductive portions electrically connected to the conductive pins and the conductive portions. The conductive portion may have elasticity, penetrate the sheet in the thickness direction, and protrude toward the circuit board side.

記接触体と前記接続体を形成するに際し、前記接触体と前記接続体のそれぞれの所定の表面形状に適合した面を有する一対の型を、前記ガラス基板を挟んで対向して配置し、前記一対の型と前記ガラス基板との間に、導電性粒子を含有する絶縁性の成形材料を充填し、その後、前記成形材料に磁場を当該成形材料の厚み方向にかけ、当該磁場によって導電性粒子を所定の位置に移動させ、前記成形材料を硬化させてもよい。なお、導電性粒子が移動する所定の位置とは、最終的に接触体と接続体のそれぞれの導電部が形成される位置である。   When forming the contact body and the connection body, a pair of molds having a surface adapted to a predetermined surface shape of each of the contact body and the connection body are arranged opposite to each other with the glass substrate interposed therebetween, and An insulating molding material containing conductive particles is filled between a pair of molds and the glass substrate, and then a magnetic field is applied to the molding material in the thickness direction of the molding material. The molding material may be cured by moving to a predetermined position. The predetermined position where the conductive particles move is a position where the respective conductive portions of the contact body and the connection body are finally formed.

別の観点による本発明は、電気的特性の検査を行う検査装置であって、被検査体に接触する接触体と、前記接触体に電気的特性の検査のための電気信号を送る回路基板と、前記接触体と前記回路基板との間に配置され、前記接触体を支持し、前記接触体と前記回路基板とを電気的に導通させる中間構造体と、を有し、前記中間構造体は、ガラス基板により形成され、当該ガラス基板の表面から裏面に通じる複数の導電路を有し、前記複数の導電路は、ガラス基板の厚み方向に複数の導電性のピンが挿入されて形成されていることを特徴とする。   According to another aspect of the present invention, there is provided an inspection apparatus for inspecting electrical characteristics, a contact body that contacts an object to be inspected, and a circuit board that sends an electrical signal for inspection of electrical characteristics to the contact body. An intermediate structure disposed between the contact body and the circuit board, supporting the contact body, and electrically connecting the contact body and the circuit board, wherein the intermediate structure is Formed of a glass substrate and having a plurality of conductive paths leading from the front surface to the back surface of the glass substrate, wherein the plurality of conductive paths are formed by inserting a plurality of conductive pins in the thickness direction of the glass substrate. It is characterized by being.

前記検査装置における前記中間構造体の表裏面には、前記導電性のピンと電気的に導通する電極がそれぞれ形成され、当該電極は、表面と裏面とでピッチが異なっていてもよい。   Electrodes that are electrically connected to the conductive pins are formed on the front and back surfaces of the intermediate structure in the inspection apparatus, and the pitch of the electrodes may be different between the front surface and the back surface.

前記接触体は、シート状に形成され、前記中間構造体の被検査体側の面に取り付けられ、前記導電性のピンと電気的に導通する複数の導電部と当該導電部相互間を接続する絶縁部により構成され、前記導電部は、弾性を有し、シートを厚み方向に貫通し、被検査体側に突出していてもよい。   The contact body is formed in a sheet shape, is attached to a surface of the intermediate structure on the inspected object side, and a plurality of conductive portions that are electrically connected to the conductive pins and an insulating portion that connects the conductive portions to each other The conductive portion may have elasticity, penetrate the sheet in the thickness direction, and protrude toward the object to be inspected.

前記検査装置は、前記中間構造体の回路基板側の面に取り付けられ、前記中間構造体と前記回路基板とを電気的に接続する接続体をさらに有し、前記接続体は、シート状に形成され、前記導電性ピンと電気的に導通する複数の導電部と当該導電部相互間を接続する絶縁部により構成され、前記導電部は、弾性を有し、シートを厚み方向に貫通し、前記回路基板側に突出していてもよい。   The inspection apparatus further includes a connection body that is attached to a surface on the circuit board side of the intermediate structure, and electrically connects the intermediate structure and the circuit board, and the connection body is formed in a sheet shape. And a plurality of conductive portions that are electrically connected to the conductive pins and insulating portions that connect the conductive portions to each other. The conductive portions have elasticity, penetrate the sheet in the thickness direction, and the circuit. You may protrude to the substrate side.

本発明によれば、厚みのあるガラス基板に導電路を簡単かつ適正に形成できる。これにより、中間構造体の厚みを厚くすることができ、被検査体と回路基板との接触を防止できる。また、中間構造体の強度や平坦度を確保し、中間構造体に支持された接触体と被検査体との電気的な接触を安定させることができる。   According to the present invention, a conductive path can be easily and appropriately formed on a thick glass substrate. Thereby, the thickness of the intermediate structure can be increased, and contact between the device under test and the circuit board can be prevented. In addition, the strength and flatness of the intermediate structure can be ensured, and the electrical contact between the contact body supported by the intermediate structure and the object to be inspected can be stabilized.

以下、本発明の好ましい実施の形態について説明する。図1は、本実施の形態にかかる検査装置1の構成の概略を示す縦断面図である。   Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a longitudinal sectional view showing an outline of a configuration of an inspection apparatus 1 according to the present embodiment.

検査装置1には、例えばプローブカード2と、被検査体としてのウェハWを載置する載置台3が設けられている。プローブカード2は、載置台3の上方に配置されている。プローブカード2は、例えば後述する下面弾性シート22に検査用の電気信号を送るための回路基板10と、当該回路基板10の外周部を保持するホルダ11と、回路基板10の下面側に装着され、ウェハW上の電極パットUに接触して回路基板10とウェハWとの間の電気的な導通を図る検査用接触構造体12を備えている。   The inspection apparatus 1 is provided with, for example, a probe card 2 and a mounting table 3 on which a wafer W as an object to be inspected is mounted. The probe card 2 is disposed above the mounting table 3. The probe card 2 is mounted on a lower surface side of the circuit board 10, for example, a circuit board 10 for sending an electrical signal for inspection to a lower elastic sheet 22, which will be described later, a holder 11 that holds the outer periphery of the circuit board 10. The inspection contact structure 12 is provided to contact the electrode pad U on the wafer W to achieve electrical conduction between the circuit board 10 and the wafer W.

回路基板10は、図示しないテスタに電気的に接続されており、テスタからの検査用の電気信号を下方の検査用接続構造体12に対し送受信することができる。回路基板10は、例えば略円盤状に形成されている。回路基板10の内部には、電子回路が形成され、回路基板10の下面には、当該電子回路の複数の接続端子10aが形成されている。   The circuit board 10 is electrically connected to a tester (not shown), and an electrical signal for inspection from the tester can be transmitted to and received from the lower connection structure 12 for inspection. The circuit board 10 is formed in a substantially disk shape, for example. An electronic circuit is formed inside the circuit board 10, and a plurality of connection terminals 10 a of the electronic circuit are formed on the lower surface of the circuit board 10.

図2は、検査用接触構造体12の構成の概略を示す縦断面図である。検査用接触構造体12は、例えば平板状の中間構造体としての中間基板20と、中間基板20の上面に取付けられた接続体としての上面弾性シート21と、中間基板20の下面に取付けられた接触体としての下面弾性シート22を備えており、3層構造を有している。   FIG. 2 is a longitudinal sectional view showing an outline of the configuration of the inspection contact structure 12. The inspection contact structure 12 is attached to the lower surface of the intermediate substrate 20, the intermediate substrate 20 as a flat intermediate structure, the upper elastic sheet 21 as a connection body attached to the upper surface of the intermediate substrate 20, for example. A bottom elastic sheet 22 as a contact body is provided and has a three-layer structure.

中間基板20は、例えば図3に示すように方形に形成されている。中間基板20は、例えば3mm〜15mm程度の厚いガラス基板により形成されている。これにより、中間基板20は、ウェハWと同程度の熱膨張率を有し、また上面弾性シート21及び下面弾性シート22に比べて高い剛性を有している。中間基板20には、例えば図2に示すように下面から上面に鉛直方向に通じる複数の導電路30が形成されている。各導電路30は、例えば中間基板20の厚み方向に導電性ピン31が挿入されて形成されている。導電路30は、例えばウェハWの電極パットUに対応する位置に形成されている。各導電路30の上端部には、上部電極30aが形成され、各導電路30の下端部には、下部電極30bが形成されている。この中間基板20の製造方法については、後述する。   The intermediate substrate 20 is formed in a square shape as shown in FIG. 3, for example. The intermediate substrate 20 is formed of a thick glass substrate of about 3 mm to 15 mm, for example. Thereby, the intermediate substrate 20 has a thermal expansion coefficient comparable to that of the wafer W, and has higher rigidity than the upper elastic sheet 21 and the lower elastic sheet 22. For example, as shown in FIG. 2, the intermediate substrate 20 is formed with a plurality of conductive paths 30 that communicate from the lower surface to the upper surface in the vertical direction. Each conductive path 30 is formed, for example, by inserting conductive pins 31 in the thickness direction of the intermediate substrate 20. The conductive path 30 is formed at a position corresponding to the electrode pad U of the wafer W, for example. An upper electrode 30 a is formed at the upper end of each conductive path 30, and a lower electrode 30 b is formed at the lower end of each conductive path 30. A method for manufacturing the intermediate substrate 20 will be described later.

下面弾性シート22は、例えば方形に形成され、中間基板20の下面に貼り付けられている。下面弾性シート22は、全体が弾性を有する絶縁材である例えばゴムシートにより形成されている。下面弾性シート22には、導電性を有する複数の導電部40が形成されている。導電部40は、ゴムシートの一部に導電性粒子が密に充填されて形成されている。導電部40は、例えば中間基板20の導電路30の下部電極30bに対応する位置に形成され、下部電極30bに接続されている。各導電部40は、例えば下面弾性シート22を上下方向に貫通し下面弾性シート22の下面から凸状に突出している。下面弾性シート22の導電部40以外の部分、つまり導電部40同士を接続する部分は、ゴムシートのみからなる絶縁部41になっている。   The lower elastic sheet 22 is formed in a square shape, for example, and is attached to the lower surface of the intermediate substrate 20. The bottom elastic sheet 22 is formed of, for example, a rubber sheet that is an insulating material having elasticity as a whole. A plurality of conductive portions 40 having conductivity are formed on the bottom elastic sheet 22. The conductive part 40 is formed by densely filling conductive particles in a part of a rubber sheet. The conductive part 40 is formed at a position corresponding to the lower electrode 30b of the conductive path 30 of the intermediate substrate 20, for example, and is connected to the lower electrode 30b. Each conductive part 40 penetrates the lower elastic sheet 22 in the vertical direction, for example, and protrudes in a convex shape from the lower surface of the lower elastic sheet 22. A portion of the lower elastic sheet 22 other than the conductive portion 40, that is, a portion connecting the conductive portions 40 is an insulating portion 41 made of only a rubber sheet.

上面弾性シート21は、上述した下面弾性シート22とほぼ同じ構成を有している。上面弾性シート21は、例えば方形に形成され、中間基板20の上面に貼り付けられている。上面弾性シート21は、全体が弾性を有する絶縁材である例えば上記下面弾性シート22と同じゴムシートにより形成されている。上面弾性シート21には、導電性を有する複数の導電部50が形成されている。導電部50は、ゴムシートの一部に導電性粒子が密に充填されて形成されている。導電部50は、例えば中間基板20の導通路30の上部電極30aに対応する位置に形成され、上部電極30aに接続されている。各導電部50は、例えば上面弾性シート21を上下方向に貫通し上面弾性シート21の上面から凸状に突出している。上面弾性シート21の導電部50以外の部分は、絶縁部51になっている。   The upper elastic sheet 21 has substantially the same configuration as the lower elastic sheet 22 described above. The upper surface elastic sheet 21 is formed in, for example, a square shape and is attached to the upper surface of the intermediate substrate 20. The upper surface elastic sheet 21 is formed of, for example, the same rubber sheet as the lower surface elastic sheet 22 which is an insulating material having elasticity as a whole. The upper surface elastic sheet 21 has a plurality of conductive portions 50 having conductivity. The conductive part 50 is formed by densely filling conductive particles in a part of a rubber sheet. For example, the conductive portion 50 is formed at a position corresponding to the upper electrode 30a of the conduction path 30 of the intermediate substrate 20, and is connected to the upper electrode 30a. Each conductive part 50 penetrates the upper surface elastic sheet 21 in the vertical direction, for example, and protrudes in a convex shape from the upper surface of the upper surface elastic sheet 21. A portion other than the conductive portion 50 of the top elastic sheet 21 is an insulating portion 51.

例えば図1に示すように中間基板20の外周部が例えばシリコーン製の接着剤60により回路基板10の下面に接着され、検査用構造体12の全体が回路基板10に固定されている。   For example, as shown in FIG. 1, the outer peripheral portion of the intermediate substrate 20 is bonded to the lower surface of the circuit board 10 by, for example, an adhesive 60 made of silicone, and the entire inspection structure 12 is fixed to the circuit board 10.

載置台3は、例えば水平方向及び上下方向に移動自在に構成されており、載置したウェハWを三次元移動できる。   The mounting table 3 is configured to be movable in the horizontal direction and the vertical direction, for example, and can move the mounted wafer W three-dimensionally.

以上のように構成された検査装置1で検査が行われる際には、先ずウェハWが載置台3上に載置され、その後載置台3が上昇されて、ウェハWの各電極Uが検査用接触構造体12の下面弾性シート22の各導電部40に押し付けられる。その後、テスタから回路基板10、検査用接触構造体12を通じてウェハWに電気信号が送られ、ウェハWの電気的特性の検査が行われる。   When inspection is performed by the inspection apparatus 1 configured as described above, the wafer W is first mounted on the mounting table 3, and then the mounting table 3 is raised so that each electrode U of the wafer W is used for inspection. The contact structure 12 is pressed against each conductive portion 40 of the bottom elastic sheet 22. Thereafter, an electrical signal is sent from the tester to the wafer W through the circuit board 10 and the inspection contact structure 12, and the electrical characteristics of the wafer W are inspected.

次に、上記中間基板20の製造方法について説明する。図4は、かかる中間基板20の製造方法に用いられる製造装置80の構成の概略を示す。   Next, a method for manufacturing the intermediate substrate 20 will be described. FIG. 4 schematically shows the configuration of a manufacturing apparatus 80 used in the method for manufacturing the intermediate substrate 20.

製造装置80は、中間基板20の基材となるガラス基板Aを収容する容器90を備えている。容器90は、上面が開口し縦断面が凹型の箱状に形成されている。容器90は、ガラス基板Aよりも線膨張係数が小さい材料で、なおかつ熱伝導性が良好でガラス基板Aと融着しない材質、例えばカーボンで形成されている。   The manufacturing apparatus 80 includes a container 90 that houses a glass substrate A that is a base material of the intermediate substrate 20. The container 90 is formed in a box shape whose upper surface is open and whose longitudinal section is concave. The container 90 is made of a material having a smaller linear expansion coefficient than that of the glass substrate A and having a good thermal conductivity and not fused to the glass substrate A, for example, carbon.

容器90は、例えば支持部材100に支持されて加熱容器101内に収容されている。加熱容器101は、例えば上面が開口し底面が閉口した略円筒状に形成されている。加熱容器101は、例えば石英ガラスにより形成されている。加熱容器101の上面開口部は、蓋体102によって気密に閉鎖されている。   For example, the container 90 is supported by the support member 100 and is accommodated in the heating container 101. For example, the heating container 101 is formed in a substantially cylindrical shape having an upper surface opened and a bottom surface closed. The heating container 101 is made of, for example, quartz glass. The upper surface opening of the heating container 101 is hermetically closed by a lid 102.

加熱容器101の周囲には、給電により発熱するヒータ103が設けられている。ヒータ103は、例えば加熱容器101の側面と下面に配置されている。   Around the heating container 101, a heater 103 that generates heat by power feeding is provided. The heater 103 is arrange | positioned at the side surface and lower surface of the heating container 101, for example.

加熱容器101は、断熱材によって形成された外カバー104によって覆われている。上記ヒータ103は、外カバー104と加熱容器101の間に介在されている。   The heating container 101 is covered with an outer cover 104 formed of a heat insulating material. The heater 103 is interposed between the outer cover 104 and the heating container 101.

蓋体102の中央部には、上下方向に貫通する貫通孔102aが形成されている。貫通孔102aには、蓋体102の上方から加熱容器101内まで上下方向に延伸するシャフト110が挿通している。   A through hole 102 a penetrating in the vertical direction is formed at the center of the lid 102. A shaft 110 extending vertically from the top of the lid 102 to the inside of the heating container 101 is inserted through the through hole 102a.

シャフト110の下端部には、例えば略円盤形状の保持部材111が取り付けられている。保持部材111は、下面が水平に形成され、この下面には、図示しない吸引口が形成されている。この吸引口からの吸引により、保持部材111の下面に後述するピン立て基板170を吸着保持できる。   A substantially disc-shaped holding member 111 is attached to the lower end of the shaft 110, for example. The lower surface of the holding member 111 is formed horizontally, and a suction port (not shown) is formed on the lower surface. By the suction from the suction port, a pin stand substrate 170 described later can be sucked and held on the lower surface of the holding member 111.

シャフト110の上端部は、蓋体102の上方に配置されたモータなどの昇降駆動部120に接続されている。昇降駆動部120は、例えば蓋体102の上面に設置された支持台121上に支持されている。昇降駆動部120は、シャフト110を上下動させて保持部材111を昇降できる。   The upper end portion of the shaft 110 is connected to an elevating drive unit 120 such as a motor disposed above the lid body 102. The elevating drive unit 120 is supported on a support base 121 installed on the upper surface of the lid 102, for example. The raising / lowering drive part 120 can raise / lower the holding member 111 by moving the shaft 110 up and down.

例えば蓋体102と昇降駆動部120との間のシャフト110には、例えば円盤状のフランジ130が取り付けられている。フランジ130と蓋体102との間には、伸縮自在なベローズ131が介在されている。このベローズ131には、図示しない冷却機構が設けられており、加熱容器101側の熱が昇降駆動部120側に伝わることを抑制している。   For example, a disc-shaped flange 130 is attached to the shaft 110 between the lid 102 and the elevating drive unit 120, for example. An expandable / contractible bellows 131 is interposed between the flange 130 and the lid 102. The bellows 131 is provided with a cooling mechanism (not shown) to suppress the heat on the heating container 101 side from being transmitted to the lifting drive unit 120 side.

製造装置80には、加熱容器101内に所定のガスを供給するガス供給管150が設けられている。ガス供給管150は、例えば加熱容器101の側面に接続されている。ガス供給管150は、図示しないガス供給源に通じている。本実施の形態においては、ガス供給源には、窒素ガスが封入されており、加熱容器101内には、ガス供給管150を通じて窒素ガスが供給される。   The manufacturing apparatus 80 is provided with a gas supply pipe 150 that supplies a predetermined gas into the heating container 101. The gas supply pipe 150 is connected to the side surface of the heating container 101, for example. The gas supply pipe 150 communicates with a gas supply source (not shown). In the present embodiment, nitrogen gas is sealed in the gas supply source, and nitrogen gas is supplied into the heating container 101 through the gas supply pipe 150.

次に、上記製造装置80を用いて行われる中間基板20の製造方法について説明する。   Next, a method for manufacturing the intermediate substrate 20 performed using the manufacturing apparatus 80 will be described.

先ず、図5に示すようなピン立て基板170が用意される。ピン立て基板170は、表面の所定の位置に複数の円形のピン立て孔170aが形成されている。ピン立て孔170aの配置や数は、最終的に中間基板20に形成される導電路30の位置に応じて適宜設定される。なお、ピン立て孔170aは、例えばフォトリソグラフィー技術によるドライエッチング加工により形成されている。   First, a pin stand substrate 170 as shown in FIG. 5 is prepared. The pin stand substrate 170 has a plurality of circular pin stand holes 170a formed at predetermined positions on the surface. The arrangement and number of the pin standing holes 170a are appropriately set according to the position of the conductive path 30 finally formed in the intermediate substrate 20. Note that the pin standing hole 170a is formed by, for example, dry etching using a photolithography technique.

そして、ピン立て基板170の各ピン立て孔170aに、円柱状の導電性ピン31が挿入されて固定される。導電性ピン31の材質として、例えばタングステンが用いられる。こうして、ピン立て基板170に複数の導電性ピン31が立てられる。   Then, the cylindrical conductive pins 31 are inserted and fixed in the pin standing holes 170a of the pin standing substrate 170. For example, tungsten is used as the material of the conductive pin 31. In this way, the plurality of conductive pins 31 are raised on the pin stand substrate 170.

次に、図4に示すように製造装置80の容器90内に、ガラス基板Aが収容される。本実施の形態では、ガラス基板Aに、例えばパイレックスガラス(コーニング社の登録商標)などのホウケイ酸ガラスが用いられる。   Next, as shown in FIG. 4, the glass substrate A is accommodated in the container 90 of the manufacturing apparatus 80. In the present embodiment, borosilicate glass such as Pyrex glass (registered trademark of Corning) is used for the glass substrate A, for example.

また、ピン立て基板170は、導電性ピン31を下に向けた状態で、製造装置80の保持部材111の下面に吸着保持される。これにより、ピン立て基板170が容器90内のガラス基板Aに対向配置される。その後、ガス供給管150から加熱容器101内に窒素ガスが供給され、加熱容器101内が不活性の窒素雰囲気に置換される。   Further, the pin stand substrate 170 is sucked and held on the lower surface of the holding member 111 of the manufacturing apparatus 80 with the conductive pins 31 facing downward. Thereby, the pin stand substrate 170 is disposed to face the glass substrate A in the container 90. Thereafter, nitrogen gas is supplied from the gas supply pipe 150 into the heating container 101, and the inside of the heating container 101 is replaced with an inert nitrogen atmosphere.

次に、図6(a)に示すようにピン立て基板170とガラス基板Aが対向配置された状態で、ヒータ103により加熱容器101内が昇温される。これにより、図6(b)に示すようにガラス基板Aが軟化点より高い温度に加熱され、溶融される。   Next, as shown in FIG. 6A, the temperature inside the heating container 101 is raised by the heater 103 in a state where the pin stand substrate 170 and the glass substrate A are arranged to face each other. Thereby, as shown in FIG.6 (b), the glass substrate A is heated to the temperature higher than a softening point, and is fuse | melted.

その後、昇降駆動部120により、保持部材111が下降し、図6(c)に示すようにピン立て基板170の導電性ピン31がガラス基板A内に挿入される。その後、ヒータ103が停止され、図6(d)に示すように導電性ピン31がガラス基板Aに挿入された状態で、ガラス基板Aが冷却され、固化される。   Thereafter, the raising / lowering drive unit 120 lowers the holding member 111, and the conductive pins 31 of the pin stand substrate 170 are inserted into the glass substrate A as shown in FIG. Thereafter, the heater 103 is stopped, and the glass substrate A is cooled and solidified in a state where the conductive pins 31 are inserted into the glass substrate A as shown in FIG.

その後、図7に示すように昇降駆動部120により保持部材111が上昇され、ピン立て基板170が導電性ピン31から取り外される。   Thereafter, as shown in FIG. 7, the holding member 111 is raised by the elevating drive unit 120, and the pin stand substrate 170 is removed from the conductive pins 31.

次に例えば図8(a)に示すようにガラス基板Aが容器90から取り出される。   Next, for example, as shown in FIG. 8A, the glass substrate A is taken out from the container 90.

次にガラス基板Aの上面と下面が研磨される。これにより、図8(b)に示すようにガラス基板Aの上下面に導電性ピン31が露出し、ガラス基板Aに、導電性ピン31による導電路30が形成される。この後、必要に応じてガラス基板Aの外側面が垂直に加工される。   Next, the upper and lower surfaces of the glass substrate A are polished. Thereby, as shown in FIG. 8B, the conductive pins 31 are exposed on the upper and lower surfaces of the glass substrate A, and the conductive paths 30 by the conductive pins 31 are formed on the glass substrate A. Thereafter, the outer surface of the glass substrate A is vertically processed as necessary.

その後、例えばめっき技術により、ガラス基板Aの上下面には、図8(c)に示すように各導電性ピン31に通じる上部電極30aと下部電極30bが形成される。こうして、ガラス基板Aの中間基板20が製造される。   Thereafter, an upper electrode 30a and a lower electrode 30b communicating with the respective conductive pins 31 are formed on the upper and lower surfaces of the glass substrate A by, for example, a plating technique as shown in FIG. Thus, the intermediate substrate 20 of the glass substrate A is manufactured.

以上の実施の形態によれば、ガラス基板Aに導電性ピン31が挿入されて、導電路30が形成されるので、厚いガラス基板Aに簡単かつ適正に導電路30を形成できる。この結果、厚いガラス基板Aの中間基板20の加工が実現できるので、例えば下面弾性シート22の導電部40のような上下に短い接触子を用いても、回路基板10とウェハWとの接触等を防止できる。また、中間基板20の強度や平坦度が確保され、下面弾性シート22とウェハWとの接触を安定させることができる。   According to the above embodiment, since the conductive pin 31 is inserted into the glass substrate A and the conductive path 30 is formed, the conductive path 30 can be easily and appropriately formed on the thick glass substrate A. As a result, since the processing of the intermediate substrate 20 of the thick glass substrate A can be realized, the contact between the circuit substrate 10 and the wafer W or the like can be achieved even if a short contactor such as the conductive portion 40 of the bottom elastic sheet 22 is used. Can be prevented. Further, the strength and flatness of the intermediate substrate 20 are ensured, and the contact between the lower elastic sheet 22 and the wafer W can be stabilized.

また、上記実施の形態によれば、ガラス基板Aの上下面を研磨するので、中間基板20の平坦度が向上し、例えば狭ピッチで可動範囲の小さい接触子を用いても、ウェハWと接触子の接触を安定させることができる。   Further, according to the above embodiment, since the upper and lower surfaces of the glass substrate A are polished, the flatness of the intermediate substrate 20 is improved. For example, even if a contact having a narrow pitch and a small movable range is used, it contacts with the wafer W. The contact of the child can be stabilized.

以上の実施の形態では、上面弾性シート21と下面弾性シート22は、それぞれ中間基板20に貼り付けて形成されていたが、次に述べる方法で形成してもよい。   In the above embodiment, the upper elastic sheet 21 and the lower elastic sheet 22 are formed by being attached to the intermediate substrate 20, respectively, but may be formed by the following method.

先ず、図9(a)に示すように中間基板20を挟んで対向した一対の型190、191を配置する。このとき、型190、191の上下方向の位置は、最終的に中間基板20の上下面に形成される上面弾性シート21と下面弾性シート22のそれぞれの厚みに応じて決定される。回路基板10側の型190はその下面に複数のくぼみ部190aが形成され、複数のくぼみ部190aは上部電極30aに対応する位置にそれぞれ形成されている。型190の下面は、最終的に中間基板20の上面に形成される上面弾性シート21の表面形状に適合している。また、ウェハW側の型191はその下面に複数のくぼみ部191aが形成され、複数のくぼみ部190aは下部電極30bに対応する位置にそれぞれ形成されている。型191の下面は、最終的に中間基板20の下面に形成される下面弾性シート22の表面形状に適合している。   First, as shown in FIG. 9A, a pair of molds 190 and 191 which are opposed to each other with the intermediate substrate 20 in between are arranged. At this time, the vertical positions of the molds 190 and 191 are determined according to the respective thicknesses of the upper elastic sheet 21 and the lower elastic sheet 22 that are finally formed on the upper and lower surfaces of the intermediate substrate 20. The mold 190 on the circuit board 10 side has a plurality of indentations 190a formed on the lower surface thereof, and the plurality of indentations 190a are respectively formed at positions corresponding to the upper electrode 30a. The lower surface of the mold 190 conforms to the surface shape of the upper elastic sheet 21 that is finally formed on the upper surface of the intermediate substrate 20. Further, the mold 191 on the wafer W side has a plurality of indentations 191a formed on the lower surface thereof, and the plurality of indentations 190a are respectively formed at positions corresponding to the lower electrodes 30b. The lower surface of the mold 191 conforms to the surface shape of the lower elastic sheet 22 finally formed on the lower surface of the intermediate substrate 20.

一対の型190、191を配置する際、回路基板10側の型190と中間基板20の上面との間、及びウェハW側の型191と中間基板20の下面との間に、導電性粒子192と高分子材料193との混合物からなる液状の絶縁性の成形材料194を充填する。なお、導電性粒子192には、磁性を示す金属の粒子が用いられ、例えばニッケル、鉄、コバルトなどの金属の粒子もしくはこれらの合金の粒子等が用いられる。また、高分子材料193には、絶縁性で弾性を有する物質、例えばシリコーンゴム、天然ゴム等が用いられる。   When arranging the pair of molds 190 and 191, the conductive particles 192 are disposed between the mold 190 on the circuit board 10 side and the upper surface of the intermediate substrate 20, and between the mold 191 on the wafer W side and the lower surface of the intermediate substrate 20. A liquid insulating molding material 194 made of a mixture of a polymer material 193 is filled. For the conductive particles 192, magnetic metal particles are used, and for example, metal particles such as nickel, iron, cobalt, or alloys thereof are used. For the polymer material 193, an insulating and elastic material such as silicone rubber or natural rubber is used.

次に、図9(b)に示すように型190と中間基板20の上面との間に充填された成形材料194に対して、上方から当該成形材料194の厚み方向に磁場をかける。同時に、型191と中間基板20の下面との間に充填された成形材料194に対して、下方から当該成形材料194の厚み方向に磁場をかける。この磁場によって、成形材料194内の導電性粒子192を、くぼみ部190a、191aと中間基板20との間、すなわち最終的に上面弾性シート21と下面弾性シート22の導電部50、40が形成される位置にそれぞれ移動させる。   Next, as shown in FIG. 9B, a magnetic field is applied to the molding material 194 filled between the mold 190 and the upper surface of the intermediate substrate 20 in the thickness direction of the molding material 194 from above. At the same time, a magnetic field is applied to the molding material 194 filled between the mold 191 and the lower surface of the intermediate substrate 20 in the thickness direction of the molding material 194 from below. By this magnetic field, the conductive particles 192 in the molding material 194 are formed between the recessed portions 190 a and 191 a and the intermediate substrate 20, that is, finally the conductive portions 50 and 40 of the upper surface elastic sheet 21 and the lower surface elastic sheet 22. Move to the respective position.

そして、例えば型190、191を中間基板20の方向にそれぞれ圧下し、成形材料194中の高分子材料193を硬化させる。   Then, for example, the molds 190 and 191 are respectively reduced in the direction of the intermediate substrate 20 to cure the polymer material 193 in the molding material 194.

その後、図9(c)に示すように型190、191を取り除く。このように、導電部50、40には導電性粒子192が充填され、また高分子材料193が硬化することによって、中間基板20の上下面に上面弾性シート21と下面弾性シート22が形成される。   Thereafter, the molds 190 and 191 are removed as shown in FIG. As described above, the conductive portions 50 and 40 are filled with the conductive particles 192 and the polymer material 193 is hardened to form the upper surface elastic sheet 21 and the lower surface elastic sheet 22 on the upper and lower surfaces of the intermediate substrate 20. .

かかる方法によれば、上面弾性シート21と下面弾性シート22が、型190、191と中間基板20との間に成形材料194を入れて形成されるので、型190、191の上下方向の位置を調整することによって、形成される上面弾性シート21と下面弾性シート22を所望の厚みに形成することができる。また、型190の下面と型191の上面は、それぞれ上面弾性シート21と下面弾性シート22の表面形状に適合しているので、形成される上面弾性シート21と下面弾性シート22の面精度を向上させることができる。   According to such a method, the upper surface elastic sheet 21 and the lower surface elastic sheet 22 are formed by putting the molding material 194 between the molds 190, 191 and the intermediate substrate 20, so that the positions of the molds 190, 191 in the vertical direction are set. By adjusting, the upper surface elastic sheet 21 and the lower surface elastic sheet 22 to be formed can be formed in a desired thickness. Further, since the lower surface of the mold 190 and the upper surface of the mold 191 are adapted to the surface shapes of the upper elastic sheet 21 and the lower elastic sheet 22, respectively, the surface accuracy of the formed upper elastic sheet 21 and lower elastic sheet 22 is improved. Can be made.

以上の実施の形態では、中間基板20の上部電極30aと下部電極30bのピッチが同じであったが、これを変えてもよい。   In the above embodiment, the pitch of the upper electrode 30a and the lower electrode 30b of the intermediate substrate 20 is the same, but this may be changed.

例えば図10に示すように上部電極30aのピッチを下部電極30bよりも広く形成してもよい。この場合、例えばガラス基板Aの上面に、導電路30の上端部と上部電極30aを接続する配線180が形成される。そして、上面弾性シート21の導電部50のピッチも下面弾性シート22の導電部40のピッチより広く形成される。かかる場合、回路基板10の下部端子10aと下面弾性シート22の導電部40との間でピッチを変換でき、より狭ピッチのウェハ電極の電気的特性の検査を行うことができる。   For example, as shown in FIG. 10, the pitch of the upper electrodes 30a may be formed wider than that of the lower electrodes 30b. In this case, for example, a wiring 180 that connects the upper end portion of the conductive path 30 and the upper electrode 30a is formed on the upper surface of the glass substrate A. The pitch of the conductive portions 50 of the upper elastic sheet 21 is also formed wider than the pitch of the conductive portions 40 of the lower elastic sheet 22. In this case, the pitch can be converted between the lower terminal 10a of the circuit board 10 and the conductive portion 40 of the lower elastic sheet 22, and the electrical characteristics of the narrower pitch wafer electrodes can be inspected.

以上、添付図面を参照しながら本発明の好適な実施の形態について説明したが、本発明はかかる例に限定されない。当業者であれば、特許請求の範囲に記載された思想の範疇内において、各種の変更例または修正例に相到し得ることは明らかであり、それらについても当然に本発明の技術的範囲に属するものと了解される。   The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the ideas described in the claims, and these are naturally within the technical scope of the present invention. It is understood that it belongs.

例えば、以上の実施の形態で記載した中間基板20は、方形であったが、円形などの他の形状であってもよい。また、導電性ピン31は、円柱状であったが、角柱状であってもよい。また、検査用接触構造体12の上面弾性シート21、下面弾性シート22等の構成も、上記例に限られず、他の構成であってもよい。接触体として下面弾性シート22に代えて、中間基板20にカンチレバー型などのプローブピンが支持されていてもよい。さらに本発明は、被検査体がウェハW以外のFPD(フラットパネルディスプレイ)などの他の基板である場合にも適用できる。   For example, the intermediate substrate 20 described in the above embodiment is a square, but may be another shape such as a circle. In addition, the conductive pin 31 has a cylindrical shape, but may have a prismatic shape. Further, the configuration of the upper surface elastic sheet 21, the lower surface elastic sheet 22, and the like of the contact structure 12 for inspection is not limited to the above example, and may be other configurations. Instead of the bottom elastic sheet 22 as a contact body, a probe pin such as a cantilever type may be supported on the intermediate substrate 20. Furthermore, the present invention can also be applied to the case where the object to be inspected is another substrate such as an FPD (flat panel display) other than the wafer W.

本発明は、検査装置において、厚みのあるガラス基板に簡単かつ適正に導電路を形成して中間構造体を製造する際に有用である。   INDUSTRIAL APPLICABILITY The present invention is useful when an intermediate structure is manufactured by forming a conductive path simply and appropriately on a thick glass substrate in an inspection apparatus.

検査装置の構成の概略を示す縦断面の説明図である。It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of a test | inspection apparatus. 検査用接触構造体の構成を示す縦断面の説明図である。It is explanatory drawing of the longitudinal cross-section which shows the structure of the contact structure for a test | inspection. 中間基板の平面図である。It is a top view of an intermediate board. 製造装置の構成の概略を示す縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of a manufacturing apparatus. ピン立て基板の斜視図である。It is a perspective view of a pin stand substrate. (a)は、ピン立て基板をガラス基板に対向配置した状態を示す説明図である。(b)は、ガラス基板を溶融した状態を示す説明図である。(c)は、導電性ピンをガラス基板内に挿入した状態を示す説明図である。(d)は、ガラス基板を固化した状態を示す説明図である。(A) is explanatory drawing which shows the state which arranged the pin stand board | substrate facing the glass substrate. (B) is explanatory drawing which shows the state which fuse | melted the glass substrate. (C) is explanatory drawing which shows the state which inserted the electroconductive pin in the glass substrate. (D) is explanatory drawing which shows the state which solidified the glass substrate. 導電性ピンからピン立て基板を取り外した状態を示す説明図である。It is explanatory drawing which shows the state which removed the pin stand board | substrate from the electroconductive pin. (a)は、ガラス基板を容器から取り出した状態を示す説明図である。(b)は、ガラス基板の上下面を研磨した状態を示す説明図である。(c)は、ガラス基板の上下面に電極を形成した状態を示す説明図である。(A) is explanatory drawing which shows the state which took out the glass substrate from the container. (B) is explanatory drawing which shows the state which grind | polished the upper and lower surfaces of the glass substrate. (C) is explanatory drawing which shows the state which formed the electrode in the upper and lower surfaces of a glass substrate. (a)は、型と中間基板の間に成形材料を充填した状態を示す説明図である。(b)は、成形材料に磁場をかけた際の成形材料の様子を示す説明図である。(c)は、上面弾性シートと下面弾性シートが形成された様子を示す説明図である。(A) is explanatory drawing which shows the state with which the molding material was filled between the type | mold and the intermediate | middle board | substrate. (B) is explanatory drawing which shows the mode of the molding material at the time of applying a magnetic field to a molding material. (C) is explanatory drawing which shows a mode that the upper surface elastic sheet and the lower surface elastic sheet were formed. 上部電極と下部電極のピッチを変えたときの検査用接触構造体の一部の縦断面図である。It is a longitudinal cross-sectional view of a part of the contact structure for inspection when the pitch between the upper electrode and the lower electrode is changed.

符号の説明Explanation of symbols

1 検査装置
10 回路基板
12 検査用接触構造体
20 中間基板
21 上面弾性シート
22 下面弾性シート
30 導電路
31 導電性ピン
80 製造装置
90 容器
170 ピン立て基板
A ガラス基板
DESCRIPTION OF SYMBOLS 1 Inspection apparatus 10 Circuit board 12 Contact structure for inspection 20 Intermediate board 21 Upper surface elastic sheet 22 Lower surface elastic sheet 30 Conductive path 31 Conductive pin 80 Manufacturing apparatus 90 Container 170 Pin stand substrate A Glass substrate

Claims (10)

電気的特性の検査が行われる被検査体に接触する接触体と、前記接触体に電気的特性の検査のための電気信号を送る回路基板を有する検査装置において、前記接触体と前記回路基板との間に配置され、前記接触体を支持し、前記接触体と前記回路基板とを電気的に導通させる中間構造体の製造方法であって、
ピン立て基板に形成された複数のピン立て孔に、導電性ピンを立設する工程と、
上面が開口した容器に、中間構造体の基材となるガラス基板を収容する工程と、
前記ピン立て基板の導電性ピンが前記ガラス基板側に向くように、前記ピン立て基板を前記容器内のガラス基板に対向配置する工程と、
前記容器内のガラス基板を加熱し、前記ガラス基板を溶融する工程と、
前記ピン立て基板を前記ガラス基板側に近づけて、前記ピン立て基板の導電性ピンを前記溶融したガラス基板内に挿入する工程と、
前記導電性ピンが前記ガラス基板に挿入された状態で、前記ガラス基板を冷却し前記ガラス基板を固化する工程と、
前記ピン立て基板を前記導電性ピンから取り外す工程と、
前記ガラス基板の表裏面を研磨する工程と、を有することを特徴とする、中間構造体の製造方法。
An inspection apparatus comprising: a contact body that contacts an object to be inspected for electrical property inspection; and a circuit board that sends an electrical signal for electrical property inspection to the contact body. A method of manufacturing an intermediate structure that is disposed between and supports the contact body and electrically connects the contact body and the circuit board,
A step of standing conductive pins in a plurality of pin stand holes formed on the pin stand substrate;
A step of accommodating a glass substrate serving as a base material of the intermediate structure in a container having an upper surface opened;
A step of disposing the pin stand substrate so as to face the glass substrate in the container so that the conductive pins of the pin stand substrate face the glass substrate side;
Heating the glass substrate in the container and melting the glass substrate;
Bringing the pin stand substrate closer to the glass substrate side and inserting the conductive pins of the pin stand substrate into the molten glass substrate;
In the state where the conductive pins are inserted into the glass substrate, the step of cooling the glass substrate and solidifying the glass substrate;
Removing the pin stand substrate from the conductive pins;
And a step of polishing the front and back surfaces of the glass substrate.
前記ガラス基板の表裏面に、前記導電性ピンと電気的に導通する電極をそれぞれ形成する工程を有することを特徴とする、請求項1に記載の中間構造体の製造方法。 The method for producing an intermediate structure according to claim 1, further comprising a step of forming electrodes that are electrically connected to the conductive pins on the front and back surfaces of the glass substrate. 前記ガラス基板の電極は、表面と裏面とでピッチが異なることを特徴とする、請求項2に記載の中間構造体の製造方法。 The method for manufacturing an intermediate structure according to claim 2, wherein the electrodes of the glass substrate have different pitches on the front surface and the back surface. 前記ガラス基板の被検査体側の面には、シート状の前記接触体が取り付けられ、当該シート状の接触体は、前記導電性ピンと電気的に導通する複数の導電部と当該導電部相互間を接続する絶縁部により構成され、前記導電部は、弾性を有し、シートを厚み方向に貫通し、被検査体側に突出していることを特徴とする、請求項1〜3のいずれかに記載の中間構造体の製造方法。 The sheet-like contact body is attached to the surface of the glass substrate on the side to be inspected, and the sheet-like contact body includes a plurality of conductive portions that are electrically connected to the conductive pins and the conductive portions. It is comprised by the insulation part to connect, The said electroconductive part has elasticity, penetrates a sheet | seat in the thickness direction, and protrudes in the to-be-inspected object side, The one in any one of Claims 1-3 characterized by the above-mentioned. A method for producing an intermediate structure. 前記ガラス基板の回路基板側の面には、シート状の接続体が取り付けられ、当該シート状の接続体は、前記導電性ピンと電気的に導通する複数の導電部と当該導電部相互間を接続する絶縁部により構成され、前記導電部は、弾性を有し、シートを厚み方向に貫通し、前記回路基板側に突出していることを特徴とする、請求項4に記載の中間構造体の製造方法。 A sheet-like connection body is attached to the surface of the glass substrate on the circuit board side, and the sheet-like connection body connects a plurality of conductive portions electrically connected to the conductive pins and the conductive portions. The intermediate structure according to claim 4, wherein the conductive portion has elasticity, penetrates the sheet in a thickness direction, and protrudes toward the circuit board. Method. 前記接触体と前記接続体を形成するに際し、
前記接触体と前記接続体のそれぞれの所定の表面形状に適合した面を有する一対の型を、前記ガラス基板を挟んで対向して配置し、
前記一対の型と前記ガラス基板との間に、導電性粒子を含有する絶縁性の成形材料を充填し、
その後、前記成形材料に磁場を当該成形材料の厚み方向にかけ、当該磁場によって導電性粒子を所定の位置に移動させ、
前記成形材料を硬化させることを特徴とする、請求項5に記載の中間構造体の製造方法。
In forming the contact body and the connection body,
A pair of molds having a surface adapted to a predetermined surface shape of each of the contact body and the connection body are arranged opposite to each other with the glass substrate interposed therebetween,
Filling an insulating molding material containing conductive particles between the pair of molds and the glass substrate,
Thereafter, a magnetic field is applied to the molding material in the thickness direction of the molding material, and the conductive particles are moved to a predetermined position by the magnetic field,
The method for manufacturing an intermediate structure according to claim 5, wherein the molding material is cured.
電気的特性の検査を行う検査装置であって、
被検査体に接触する接触体と、
前記接触体に電気的特性の検査のための電気信号を送る回路基板と、
前記接触体と前記回路基板との間に配置され、前記接触体を支持し、前記接触体と前記回路基板とを電気的に導通させる中間構造体と、を有し、
前記中間構造体は、ガラス基板により形成され、当該ガラス基板の表面から裏面に通じる複数の導電路を有し、
前記複数の導電路は、ガラス基板の厚み方向に複数の導電性のピンが挿入されて形成されていることを特徴とする、検査装置。
An inspection device for inspecting electrical characteristics,
A contact body that contacts the object to be inspected;
A circuit board for sending an electrical signal for inspection of electrical characteristics to the contact body;
An intermediate structure that is disposed between the contact body and the circuit board, supports the contact body, and electrically connects the contact body and the circuit board;
The intermediate structure is formed of a glass substrate, and has a plurality of conductive paths leading from the front surface to the back surface of the glass substrate,
The inspection apparatus, wherein the plurality of conductive paths are formed by inserting a plurality of conductive pins in a thickness direction of the glass substrate.
前記中間構造体の表裏面には、前記導電性のピンと電気的に導通する電極がそれぞれ形成され、当該電極は、表面と裏面とでピッチが異なっていることを特徴とする、請求項7に記載の検査装置。 The front surface and the back surface of the intermediate structure are respectively formed with electrodes that are electrically connected to the conductive pins, and the electrodes have different pitches on the front surface and the back surface. The inspection device described. 前記接触体は、シート状に形成され、前記中間構造体の被検査体側の面に取り付けられ、前記導電性のピンと電気的に導通する複数の導電部と当該導電部相互間を接続する絶縁部により構成され、
前記導電部は、弾性を有し、シートを厚み方向に貫通し、被検査体側に突出していることを特徴とする、請求項7又は8に記載の検査装置。
The contact body is formed in a sheet shape, is attached to a surface of the intermediate structure on the inspected object side, and a plurality of conductive portions that are electrically connected to the conductive pins and an insulating portion that connects the conductive portions to each other Consisting of
The inspection apparatus according to claim 7, wherein the conductive portion has elasticity, penetrates the sheet in the thickness direction, and protrudes toward the object to be inspected.
前記中間構造体の回路基板側の面に取り付けられ、前記中間構造体と前記回路基板とを電気的に接続する接続体をさらに有し、
前記接続体は、シート状に形成され、前記導電性ピンと電気的に導通する複数の導電部と当該導電部相互間を接続する絶縁部により構成され、
前記導電部は、弾性を有し、シートを厚み方向に貫通し、前記回路基板側に突出していることを特徴とする、請求項9に記載の検査装置。
It is attached to the surface of the intermediate structure on the circuit board side, and further includes a connection body that electrically connects the intermediate structure and the circuit board,
The connection body is formed in a sheet shape and includes a plurality of conductive portions that are electrically connected to the conductive pins and an insulating portion that connects the conductive portions.
The inspection apparatus according to claim 9, wherein the conductive portion has elasticity, penetrates a sheet in a thickness direction, and protrudes toward the circuit board.
JP2007286929A 2007-11-05 2007-11-05 Process for producing intermediate structure, and inspection apparatus Pending JP2009115524A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007286929A JP2009115524A (en) 2007-11-05 2007-11-05 Process for producing intermediate structure, and inspection apparatus
PCT/JP2008/069516 WO2009060755A1 (en) 2007-11-05 2008-10-28 Process for producing intermediate structure and inspection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007286929A JP2009115524A (en) 2007-11-05 2007-11-05 Process for producing intermediate structure, and inspection apparatus

Publications (1)

Publication Number Publication Date
JP2009115524A true JP2009115524A (en) 2009-05-28

Family

ID=40625649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007286929A Pending JP2009115524A (en) 2007-11-05 2007-11-05 Process for producing intermediate structure, and inspection apparatus

Country Status (2)

Country Link
JP (1) JP2009115524A (en)
WO (1) WO2009060755A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2405471A3 (en) * 2010-07-08 2013-03-06 Seiko Instruments Inc. Method of manufacturing through electrode-attached glass substrate and method of manufacturing electronic component
EP2355343A3 (en) * 2010-02-05 2013-09-25 Seiko Instruments Inc. Method of manufacturing package and method of manufacturing piezoelectric vibrator
EP2405470A3 (en) * 2010-07-08 2014-02-26 Seiko Instruments Inc. Method of manufacturing through electrode-attached glass substrate and method of manufacturing electronic component

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210251086A1 (en) * 2018-11-05 2021-08-12 Nok Corporation Manufacturing method of conductive member

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151184A (en) * 2000-11-08 2002-05-24 Jsr Corp Anisotropic conductive sheet and electrical inspection device for circuit device
JP2005317944A (en) * 2004-03-31 2005-11-10 Jsr Corp Probe apparatus, wafer-inspecting apparatus provided with the probe apparatus, and the wafer-inspecting method
JP2006194620A (en) * 2005-01-11 2006-07-27 Tokyo Electron Ltd Probe card and contact structure for inspection
JP2007067387A (en) * 2005-08-02 2007-03-15 Nec Schott Components Corp Insulating substrate and its manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151184A (en) * 2000-11-08 2002-05-24 Jsr Corp Anisotropic conductive sheet and electrical inspection device for circuit device
JP2005317944A (en) * 2004-03-31 2005-11-10 Jsr Corp Probe apparatus, wafer-inspecting apparatus provided with the probe apparatus, and the wafer-inspecting method
JP2006194620A (en) * 2005-01-11 2006-07-27 Tokyo Electron Ltd Probe card and contact structure for inspection
JP2007067387A (en) * 2005-08-02 2007-03-15 Nec Schott Components Corp Insulating substrate and its manufacturing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2355343A3 (en) * 2010-02-05 2013-09-25 Seiko Instruments Inc. Method of manufacturing package and method of manufacturing piezoelectric vibrator
EP2405471A3 (en) * 2010-07-08 2013-03-06 Seiko Instruments Inc. Method of manufacturing through electrode-attached glass substrate and method of manufacturing electronic component
US8596092B2 (en) 2010-07-08 2013-12-03 Seiko Instruments Inc. Method of manufacturing through electrode-attached glass substrate
EP2405470A3 (en) * 2010-07-08 2014-02-26 Seiko Instruments Inc. Method of manufacturing through electrode-attached glass substrate and method of manufacturing electronic component
TWI513391B (en) * 2010-07-08 2015-12-11 Seiko Instr Inc A method of manufacturing a glass substrate with a through electrode, and a method of manufacturing the same

Also Published As

Publication number Publication date
WO2009060755A1 (en) 2009-05-14

Similar Documents

Publication Publication Date Title
US7716824B2 (en) Method of manufacturing a probe card
JP5396112B2 (en) Probe card
TWI333547B (en)
TW463280B (en) Method of producing a contact structure
US7267551B2 (en) Inspection contact structure and probe card
CN101874209B (en) Holding member for inspection and method for manufacturing holding member for inspection
JP2002334732A (en) Anisotropic conductive connector, its manufacturing method, and probe member
JP2008101944A (en) Supporting member for inspection, inspection device and inspection method
KR20100028127A (en) Contactor, probe card and method of mounting contactor
KR102124997B1 (en) Manufacturing method of conductive particle and conductive particle manufactured by the method
JP2011043377A (en) Contact structure for inspection
JP2009115524A (en) Process for producing intermediate structure, and inspection apparatus
JP4615057B1 (en) Probe card
JP4384724B2 (en) Probe card manufacturing method
TWI328685B (en)
KR20090011977A (en) Method of manufacturing silicon contactor for testing semiconductor device
JP2009257910A (en) Double elastic mechanism probe card and its method for manufacturing
WO2004019668A1 (en) Perforated substrate, method for manufacturing same and full wafer contact board
TW201727794A (en) Multi-die interface for semiconductor testing and method of manufacturing same
KR20030035870A (en) Test board
JP3596499B2 (en) Method for manufacturing semiconductor inspection device, semiconductor inspection device, and method for inspecting semiconductor device
KR101513937B1 (en) Fabrication method of test sheet
JP2000241450A (en) Contactor

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101102

A131 Notification of reasons for refusal

Effective date: 20120703

Free format text: JAPANESE INTERMEDIATE CODE: A131

A02 Decision of refusal

Effective date: 20121030

Free format text: JAPANESE INTERMEDIATE CODE: A02