JP2009109444A - Wavefront aberration measurement system, aligner and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wavefront aberration measurement system for highly precisely measuring wavefront aberration of the projection optical system of a liquid immersed aligner. <P>SOLUTION: The wavefront aberration measurement system for measuring the wavefront aberration of the optical system of the aligner for exposing the substrate through the immersion liquid between the projection optical system and the substrate includes: an incident optical system for making detection light incident on the projection optical system by splitting the light from a light source into detection light and reference light; a reflection optical system for making the detection light emitted from the projection optical system reflect again on the same light path toward the projection optical system; and a detector for detecting an interference fringe generated by the interference between the detection light reflected by the reflection optical system and emitted by the projection optical system and the reference light which does not pass the projection optical path. Therein, the system is characterized by providing with a rotation mechanism for making the reflection optical system rotate and a slanting mechanism for making it aslant. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a wavefront aberration measuring apparatus for measuring wavefront aberration of an optical element used in a projection optical system of an immersion exposure apparatus.

Conventionally, the measurement of the wavefront aberration of the projection optical system in an immersion exposure apparatus is performed as follows in a liquid immersion state similar to the actual use state with the wafer side space filled with liquid.
In the following description using FIG. 8, the Fizeau interference method is taken as an example, but the present invention is not limited to the Fizeau interferometer.
Light from a light source 101 such as a laser light source having good coherence having an oscillation wavelength close to the use wavelength of the test lens 115 of the projection optical system is guided to the interferometer unit 102.
Inside the interferometer unit 102, light is collected on the spatial filter 104 by the condenser lens 103.
Here, the diameter of the spatial filter 104 is set to about ½ of the Airy disk diameter determined by the NA (numerical aperture) of the collimator lens 106.
As a result, the light emitted from the spatial filter 104 becomes an ideal spherical wave, passes through the half mirror 105, is converted into parallel light by the collimator lens 106, and is emitted from the interferometer unit 102.

Thereafter, the test light is led to the upper part of the object plane of the test lens 115 by the drawing optical system 110, is incident on the TS-XYZ stages 123, 122, and 124, and is a mirror fixedly arranged on the stage base 121. 111 is reflected in the Y direction.
Further, the light is reflected in the X direction by the Y moving mirror 112 disposed on the TS-Y stage 122 and is reflected in the Z direction by the X moving mirror 113 disposed on the TS-X stage 123.
Further, the light incident on the TS lens 114 disposed on the TS-Z stage 121 is separated into test light and reference light on the Fizeau surface. The test light that has passed through the TS lens 114 is condensed onto the object plane of the test lens 115, and after passing through the test lens 115, is re-imaged on the image plane that is the surface of the wafer 140 that is the substrate. .
The immersion liquid 118 is supplied from the immersion liquid supply system 119 and is recovered by the immersion liquid recovery system 120.
The reflective spherical surface 116 is disposed on the high-precision RS-YXZ stages 126, 125, and 127, and can move to an arbitrary image height of the lens 115 to be examined.
After being reflected by the RS mirror 116 disposed on the RS-XYZ stage, the test light travels backward through the test lens 115, the TS lens 114, the mirrors 113, 112, 111, and the routing optical system 110 along substantially the same optical path. The light enters the interferometer unit 102 again.

The test light enters the interferometer unit 102, is reflected by the collimator lens 106 and the half mirror 105, and is collected on the spatial filter 107.
Here, the spatial filter 107 is for blocking stray light and steeply inclined wavefronts. After passing through the spatial filter 107, the light is incident on the CCD camera 109 as a substantially parallel light beam by the imaging lens 108.
On the other hand, the reference light reflected from the Fizeau surface of the TS lens 114 travels backward along substantially the same optical path and enters the CCD camera 109 as reference light. Interference fringes are obtained by superimposing the reference light and the test light.
The TS-XYZ stages 123, 122, 124 and the RS-XYZ stages 126, 125, 127 can be moved to arbitrary image height positions of the test lens 115.
That is, based on a command from the host computer 131, the lens 115 can be moved to an arbitrary image height position via the control device 130, the TS-XYZ stage driving device 128, and the RS-XYZ stage driving device 129. is there.
As a result, it is possible to continuously measure the wavefront aberration at an arbitrary image point in the exposure area.
Here, since the wavefront measurement value is measured as the sum of the system error of the lens to be measured and the interferometer itself, it is necessary to accurately measure the system error and remove it from the measurement value.

Therefore, two conventional RS system error calibration methods will be described.
The first calibration method is a method of measuring the shape of the RS mirror by using, for example, a surface shape measuring device outside the interference device.
The RS mirror mounted on the interferometer is removed, and the shape is measured with another surface shape measuring instrument.
Next, the RS mirror is mounted on the interference device again, and the result measured by the surface shape measuring instrument is used as the RS system error.
The second calibration method is a method of measuring the RS shape by the 0-180-CE method and the Ball method through a dry high NA lens on the apparatus.
The 0-180-CE method is a method for obtaining an RS mirror system error from predetermined data.
The predetermined data includes data measured by arranging the RS mirror at the 0 ° position with respect to the test lens 115 and data measured by rotating the RS mirror at the 180 ° position with respect to the test lens 115. .
Further, the predetermined data is data measured by disposing a mirror at the focal position of the lens 115 to be examined and performing focal reflection.
The BaLL method is also called a wavefront averaging method. For example, a sphere is arranged instead of an RS mirror, and measurement is performed while rotating the sphere. This is how to get an error.

Japanese Patent Laying-Open No. 2006-135111 (Patent Document 1) proposes an interferometer for measuring the wavefront of a projection optical system of an immersion exposure apparatus.
Furthermore, Japanese Patent Laid-Open No. 5-223537 (Patent Document 2) proposes a shape system that can relax the limitation of averaging of the lens to be tested, that is, a method of calibrating the system error of the interferometer. .
Further, in Japanese Patent Laid-Open No. 5-203424 (Patent Document 3), a reference surface shape measurement method for measuring the surface shape of the reference surface without requiring a dummy lens larger than the NA of the collimating lens, that is, interference. A method for calibrating the total system error has been proposed.
JP 2006-135111 A JP-A-5-223537 Japanese Patent Laid-Open No. 5-203424

However, since the first calibration method cannot be calibrated on the device, the change in the holding state due to the removal of the RS mirror causes the RS mirror shape to change, and further, the RS is held on the interference device and the surface shape measuring instrument. A calibration error occurred when the status was different.
In addition, since both the first and second calibration methods cannot be calibrated in a liquid immersion state, the environment around the RS mirror differs between calibration and wavefront measurement. For example, calibration errors occur due to RS shape changes due to temperature changes. did.
Further, a dry high NA lens is necessary as an expensive calibration tool.
SUMMARY OF THE INVENTION An object of the present invention is to provide a wavefront aberration measuring apparatus that measures the wavefront aberration of a projection optical system of an immersion exposure apparatus with high accuracy.

  In order to achieve the above object, a wavefront aberration measuring apparatus according to the present invention separates light from a light source into test light and reference light, and makes the test light incident on a projection optical system, and the projection The test light emitted from the optical system is reflected again by the same optical path toward the projection optical system, and the test light reflected by the reflection optical system and emitted from the projection optical system. And a detector that detects interference fringes generated by interference with the reference light that does not pass through the projection optical system, and the substrate is placed through an immersion liquid between the projection optical system and the substrate. The wavefront aberration measuring apparatus that measures the wavefront aberration of the projection optical system of an exposure apparatus that performs exposure includes a rotation mechanism that rotates the reflection optical system and an inclination mechanism that tilts the reflection optical system.

  According to the present invention, the wavefront aberration of the projection optical system of the immersion exposure apparatus is measured with high accuracy.

  Embodiments of the present invention will be described below with reference to the drawings.

A wavefront aberration measuring apparatus according to a first embodiment of the present invention that measures the wavefront aberration of the projection optical system of the immersion exposure apparatus will be described below with reference to the schematic block diagram of FIG.
In the immersion exposure apparatus having the first embodiment, the immersion liquid 18 is filled in the gap between the final optical element disposed near the wafer 40 which is the closest substrate of the lens 15 to be tested which is a projection optical system and the wafer 40. Then, a reticle pattern, which is an original, is projected onto the wafer 40.
The wavefront aberration measuring apparatus according to the first embodiment guides light from a light source 1 that emits light, such as a laser light source having good coherence, having an oscillation wavelength close to the use wavelength of the lens 15 to be tested to the interferometer unit 2. .
The incident optical system includes an interferometer unit 2, a routing optical system 10, a mirror 11, a Y moving mirror 12, an X moving mirror 13, and a TS lens 14.
This incident optical system separates light from the light source 1 into test light and reference light, and makes the test light incident on a test lens 15 that is a test optical element of a projection optical system in which wavefront aberration is measured. .
The light from the light source 1 is separated into test light and reference light in the middle of the optical path.
Inside the interferometer unit 2, the light 1 a is collected on the spatial filter 4 by the condenser lens 3.
Here, the diameter of the spatial filter 4 is set to about ½ of the Airy disk diameter determined by the NA (numerical aperture) of the collimator lens 6.
As a result, the outgoing light 1c that is the test light from the spatial filter 4 becomes an ideal spherical wave, is transmitted through the half mirror 5, is converted into parallel light 1d by the collimator lens 6, and is emitted from the interferometer unit 2. .
Thereafter, the light 1 d is guided to the upper part of the object plane of the lens 15 to be tested by the drawing optical system 10, incident on the TS-XYZ stages 23, 22, and 24, and the mirror 11 fixedly disposed on the stage base 21. Is reflected in the Y direction.
Further, the light is reflected in the X direction by the Y moving mirror 12 disposed on the TS-Y stage 22 and is reflected in the Z direction by the X moving mirror 13 disposed on the TS-X stage 23.
Further, the light incident on the TS lens 14 arranged on the TS-Z stage 21 is separated into test light and reference light on the Fizeau surface. The test light that has passed through the TS lens 114 is condensed onto the object surface of the test lens 15, and after passing through the test lens 15, is re-imaged on the wafer surface 201 shown in FIG. The

Thereafter, the test light is reflected by the reflecting element 16 which is a reflecting optical system disposed on the RS-XYZ stages 26, 25 and 27.
Further, the test light travels backward through the test lens 15, the TS lens 14, the mirrors 13, 12, 11, and the routing optical system 10 along substantially the same optical path, and enters the interferometer unit 2 again.
The test light 1 a enters the interferometer unit 2, is reflected by the collimator lens 6 and the half mirror 5, and is collected on the spatial filter 7.
Here, the spatial filter 7 is for blocking stray light and steeply inclined wavefronts.
After passing through the spatial filter 7, the light is incident on the CCD camera 9, which is a photodetector, by the imaging lens 8 as a substantially parallel light beam.
The CCD camera 9 that is the photodetector is reflected by the reflecting element 16 that is a reflecting optical system and is emitted from the test lens 15 that is the test optical element, and the reference light that does not pass through the test lens 15. This is a device for detecting interference fringes generated by interference with.
On the other hand, the reference light reflected from the Fizeau surface of the TS lens 14 travels backward along substantially the same optical path and enters the CCD camera 9 as reference light.
Interference fringes are obtained by superimposing the reference light and the test light.
The TS-XYZ stages 23, 22, 24 and the RS-XYZ stages 26, 25, 27 can be moved to any image height position of the lens 15 to be examined.
That is, based on a command from the host computer 31, the lens 15 can be moved to an arbitrary image height position via the control device 30, the TS-XYZ stage driving device 28, and the RS-XYZ stage driving device 29. is there.
As a result, it is possible to continuously measure wavefront aberration at an arbitrary image point in the exposure area.

The wavefront aberration measuring apparatus according to the first embodiment has the same basic configuration as that of the conventional wavefront aberration measuring apparatus shown in FIG. 8, but the reflecting element 16 is located near the image plane 201 side of the lens 15 to be measured, that is, near the wafer side. An immersion liquid holding plate 17, an immersion liquid 18, an immersion liquid supply system 19, and an immersion liquid recovery system 20.
A configuration in the vicinity of the reflecting element 16 of the wavefront aberration measuring apparatus according to the first embodiment will be described with reference to an enlarged view of a main part in FIG.
The reflection element 16 reflects the light from the test lens 15 and makes it incident on the test lens 15 again.
That is, the reflection element 16 that is a reflection optical system reflects the test light emitted from the test lens 15 that is the test optical element again toward the test lens 15 that is the test optical element along the same optical path. It is an optical system.
The image space between the reflecting element 16 and the test lens 15 is filled with the immersion liquid 18.
When the image space is filled with the immersion liquid 18, the wavefront aberration measuring apparatus according to the first embodiment can reproduce the same state as that when the lens 15 is used in the immersion exposure apparatus.
The immersion liquid 18 is supplied from the immersion liquid supply system 19 and is recovered by the immersion liquid recovery system 20.
The reflecting element 16 is disposed on the high-precision RS-YXZ stages 26, 25, and 27, and can move to an arbitrary image height of the lens 15 to be examined.

The reflection element 16 includes a rotation mechanism 32 that rotates the reflection element 16 and an inclination mechanism 33 that inclines the reflection element 16.
The rotating mechanism 32 rotates the reflecting element 16 around the optical axis, and the tilting mechanism 33 tilts around the center of curvature of the reflecting element 16 that is a reflecting optical system.
The wavefront aberration measuring apparatus according to the first embodiment can be calibrated by performing measurement by rotating or tilting the reflecting element 16 with the rotation mechanism 32 or the tilt mechanism 33. In the wavefront measurement, the rotation mechanism 32 and the tilt mechanism 33 are held at the origin position to perform measurement.
As described above, the reflection element 16 that is the same reflection optical system is used, and the measurement reflection optical system and the calibration reflection optical system are used together, and the wavefront aberration measuring apparatus of the first embodiment can be calibrated and wavefront measured. .
However, since the stability of the rotation mechanism 32 and the tilt mechanism 33 becomes an error factor in wavefront measurement, it is necessary to pay attention to the stationary accuracy of the rotation mechanism 32 and the tilt mechanism 33.
In order to rotate and tilt the reflective element 16 in the immersion liquid 18, for example, it is necessary to provide a gap 16b between the immersion liquid holding plate 17 that holds the immersion liquid 18 and the reflective element 16 to reduce the frictional resistance. is there.
In order to prevent the immersion liquid 18 from being damaged by entering the rotating mechanism 32 and the tilting mechanism 33 from the gap 16b, the gap 16b is formed to have an interval larger than 0 and smaller than 0.3 mm. Apply liquid repellent treatment to the side.
As a result, capillary action does not occur, and flooding can be prevented.
In the unlikely event that the immersion liquid 18 enters, the immersion liquid 18 is recovered by the immersion liquid recovery mechanism 34 formed of a vacuum suction mechanism or a sponge before reaching the rotation mechanism 32 and the tilt mechanism 33.
According to this embodiment, the wavefront aberration of the test lens of the projection optical system of the liquid immersion exposure apparatus can be measured in the liquid immersion state similar to the actual use state, and it remains even when the NA of the test lens is high. The aberration does not increase and the accuracy of wavefront aberration measurement is improved.
Further, the system error of the reflection optical system can be accurately calibrated, and the wavefront aberration of the test lens can be measured with high accuracy.

With reference to FIG. 3, a wavefront aberration measuring apparatus according to Embodiment 2 of the present invention will be described.
In the first embodiment, the reflecting element 16 that is a reflecting optical system is configured in a concave shape, but in the second embodiment, the reflecting element 16a that is a reflecting optical system has a convex surface facing the lens 15 to be measured. Formed.
In the first embodiment, the condensing point is in the immersion liquid 18, and a measurement error may occur due to a temperature rise near the condensing point.
Further, the optical path in the immersion liquid 18 becomes longer, and on the contrary, it is easily affected by fluctuations.
However, in the second embodiment, as shown in FIG. 3, the test light is reflected by the convex surface of the reflecting element 16a above the position of the image plane 201 of the test lens 15, that is, before reaching the position of the image plane 201. The reflective element 16a is arranged so as to be.
For this reason, the influence of the fluctuation | variation accompanying the temperature rise in the immersion liquid 18 and an optical path increase is reduced.
For example, when the projection lens for ArF laser is the lens 15 to be examined, the back focus is about 1 mm, and therefore the radius of curvature of the convex surface of the reflecting element 16a needs to be smaller than 1 mm.
In the second embodiment, similarly to the first embodiment, the reflective optical element 16a includes the rotation mechanism 32 and the tilt mechanism 33, and the interferometer can be calibrated by performing measurement by rotating or tilting the reflective element 16a. It is.

With reference to FIG. 4, the wavefront aberration measuring apparatus of Example 3 of this invention is demonstrated.
In the first and second embodiments, the reflection optical system combines the measurement reflection optical system and the calibration reflection optical system, and uses the reflection element 16 or 16a that is the reflection optical system to interferometer calibration and wavefront. Take measurements.
However, in the third embodiment, the reflection optical system includes the reflection element 16d that is a measurement reflection optical system and the reflection element 16 that is at least one calibration reflection optical system, and interferometer calibration and wavefront measurement are performed. Use different reflective optics.
Furthermore, it has the rotation mechanism 32 which rotates the reflective element 16 which is a reflection optical system for calibration, and the inclination mechanism 33 which inclines.
For this reason, in the third embodiment, the reflecting element 16d, which is a reflection optical system for wavefront measurement, does not have the rotation mechanism 32 and the tilt mechanism 33 that are drive mechanisms, and therefore does not become an error factor in wavefront measurement.
In the third embodiment shown in FIG. 4, the reflecting element 16d, which is a reflection optical system for wavefront measurement, and the reflecting element 16, which is a reflection optical system for calibration, are both configured from a concave mirror, but a convex mirror may be used.

An exposure apparatus according to an embodiment of the present invention will be described with reference to FIG.
The exposure apparatus of the present embodiment includes the wavefront aberration measuring apparatus according to Embodiment 1, and includes an exposure light source 401, routing optical systems 402 and 406, an optical path switching mirror 403, an incoherent unit 404, an illumination optical system 405, It consists of a condenser lens 407 and a spatial filter 408.
Further, this embodiment includes a collimator lens 409, half mirrors 412 and 410, a mirror 411, an XYZ stage 413, a collimator lens unit 414, a reticle surface 415, a wafer chuck 417, a wafer stage 418, and an interferometer unit 421.
Other reference numerals similar to those in the first embodiment shown in FIGS. 1 and 2 indicate the same configurations as those in the first embodiment.
On the wafer stage 418 of the exposure apparatus of the present embodiment, a parallel plate 17 similar to that of the first embodiment and a reflecting element 16 which is a reflecting optical system adhered or welded thereto are disposed.
The optical path switching mirror 403 is switched to the wavefront aberration measurement optical path side so that the light from the exposure light source 401 is drawn and enters the optical system 406.
Light is guided to the reticle surface 415 through the drawing optical system 406, and re-imaged on the wafer surface 201 by the projection lens (test lens) 15.
The wafer stage 418 moves the reflective element 16 so that the condensing point (that is, the center of curvature) of the reflective element 16 coincides with the wafer surface 201.
Then, the test light is reflected by the convex surface of the reflecting element 16, travels backward through the projection lens 15, and is guided into the interference optical system 421.
Then, the interference fringes are detected by a detector including, for example, a CCD camera provided in the interference optical system 421, and the wavefront aberration of the projection lens 15 is measured.
The reflecting element 16 can be rotated and tilted by rotating and tilting mechanisms 32 and 33, and the system error can be calibrated as in the first embodiment.
In this embodiment, the light beam from the light source is routed and bypassed to the optical system 406.
However, if the amount of light necessary for interference measurement can be secured on the CCD camera, the light beam irradiated to the reticle surface via the illumination optical system 405 without using the routing optical system 406 is used for wavefront aberration measurement. May be.

Next, with reference to FIGS. 6 and 7, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described.
FIG. 6 is a flowchart for explaining the manufacture of semiconductor chips such as IC and LSI, and devices such as LCD and CCD. Here, the manufacture of a semiconductor chip will be described as an example.
In step 101 (circuit design), a device circuit is designed.
In step 102 (reticle fabrication), a reticle on which the designed circuit pattern is formed is fabricated.
In step 103 (wafer manufacture), a wafer (substrate) is manufactured using a material such as silicon.
Step 104 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the reticle and wafer.
Step 105 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer created in step 104, and includes processes such as an assembly process (dicing and bonding), a packaging process (chip encapsulation), and the like. .
In step 106 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 105 are performed.
Through these steps, the semiconductor device is completed and shipped (step 107).

FIG. 7 is a detailed flowchart of the wafer process in Step 104.
In step 111 (oxidation), the wafer surface is oxidized.
In step 112 (CVD), an insulating film is formed on the surface of the wafer.
In step 113 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like.
In step 114 (ion implantation), ions are implanted into the wafer.
In step 115 (resist process), a photosensitive agent is applied to the wafer.
Step 116 (exposure) uses the exposure apparatus S4 to expose a reticle circuit pattern onto the wafer.
In step 117 (development), the exposed wafer is developed.
In step 118 (etching), portions other than the developed resist image are removed.
In step 119 (resist stripping), the resist that has become unnecessary after the etching is removed.
By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.
According to the manufacturing method of the present embodiment, it is possible to manufacture a higher-quality device than before.

It is a block diagram which shows schematic structure of the wavefront aberration measuring apparatus of Example 1 of this invention. It is a principal part enlarged view of the wavefront aberration measuring apparatus of the present Example 1 of FIG. It is a principal part enlarged view of the wavefront aberration measuring apparatus of Example 2 of this invention. It is a principal part enlarged view of the wavefront aberration measuring apparatus of Example 3 of this invention. It is a block diagram which shows schematic structure of the exposure apparatus of the Example of this invention. 6 is a flowchart for explaining a device manufacturing method by the exposure apparatus shown in FIG. It is a detailed flowchart of step 104 shown in FIG. It is a block diagram which shows schematic structure of the wavefront aberration measuring apparatus of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101: Light source 2,102,421: Interferometer unit 9,109: CCD camera (photodetector) 15,115: Test lens 16, 16a: Reflecting element 18: Immersion liquid
19: immersion liquid supply system 20: immersion liquid recovery system 32: rotating mechanism 33: tilting mechanism
201: Image plane (wafer surface) 202: Plane 401: Exposure light source 405: Illumination optical system
415: Reticle surface 417: Wafer chuck
418: Wafer stage

Claims (8)

An incident optical system that separates light from a light source into test light and reference light, and makes the test light incident on a projection optical system;
A reflection optical system that reflects the test light emitted from the projection optical system again toward the projection optical system in the same optical path;
A detector that detects interference fringes generated by interference between the test light reflected by the reflection optical system and emitted from the projection optical system and the reference light that does not pass through the projection optical system; ,
In the wavefront aberration measuring apparatus that measures the wavefront aberration of the projection optical system of the exposure apparatus that exposes the substrate through the immersion liquid between the projection optical system and the substrate,
A wavefront aberration measuring apparatus comprising a rotating mechanism for rotating the reflecting optical system and a tilting mechanism for tilting the reflecting optical system.   2. The wavefront aberration measuring apparatus according to claim 1, wherein the reflection optical system serves as both a measurement reflection optical system and a calibration reflection optical system. The reflection optical system includes the measurement reflection optical system and at least one calibration reflection optical system,
The wavefront aberration measuring apparatus according to claim 1, further comprising the rotation mechanism that rotates the reflection optical system for calibration and the tilt mechanism that tilts the reflection optical system.   The gap between the reflective optical system and the immersion liquid holding plate for holding the immersion liquid is formed to be greater than 0 and less than 0.3 mm, and the immersion liquid into the rotation mechanism and the tilt mechanism The wavefront aberration measuring apparatus according to claim 1, wherein the wavefront aberration measuring apparatus according to claim 1 is prevented.   5. The wavefront aberration measuring apparatus according to claim 4, wherein a liquid repellent treatment is applied to a side surface of the gap.   The wavefront aberration measuring apparatus according to claim 4, further comprising an immersion liquid recovery mechanism that recovers the immersion liquid that has entered the gap. The wavefront aberration measuring device according to any one of claims 1 to 6,
An exposure apparatus that exposes the substrate through an immersion liquid between the projection optical system and the substrate. Exposing the substrate with the exposure apparatus according to claim 7;
And a step of developing the exposed substrate.

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