JP2009105350A - Semiconductor apparatus and method of manufacturing the same - Google Patents

Semiconductor apparatus and method of manufacturing the same Download PDF

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JP2009105350A
JP2009105350A JP2007278247A JP2007278247A JP2009105350A JP 2009105350 A JP2009105350 A JP 2009105350A JP 2007278247 A JP2007278247 A JP 2007278247A JP 2007278247 A JP2007278247 A JP 2007278247A JP 2009105350 A JP2009105350 A JP 2009105350A
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sealing resin
heat dissipation
adhesive
semiconductor device
semiconductor chip
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Japanese (ja)
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Daikaku Chi
大赫 遅
Shigeji Oida
成志 老田
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Abstract

<P>PROBLEM TO BE SOLVED: To attach a radiating apparatus on a sealing resin with a fixed height and a fixed posture, and to strengthen connection between the sealing resin and an adhesive agent in a semiconductor apparatus. <P>SOLUTION: A semiconductor apparatus has: a wiring substrate 2; a semiconductor chip 7 mounted on and electrically connected to the wiring substrate 2; a sealing resin 3 formed on the wiring substrate 2 so as to cover the semiconductor chip 7 and the electrical connection part of the semiconductor chip 7; and a radiating apparatus 4 fixed on the sealing resin 3 by an adhesive agent 5. In the semiconductor apparatus, two or more projections 14 having the same height are formed on one opposing surface of the sealing resin 3 and the radiating apparatus 4, and a structure in which these projections 14 contact with the other surface is provided. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体装置およびその製造方法に関し、特にその熱対策技術に関するものである。   The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a thermal countermeasure technique.

近年の半導体装置（半導体集積回路装置）は、高集積化、高速動作化に伴って、発熱量が増加する一方である。そのため半導体装置に、たとえばＢＧＡ（Ball Grid Array）パッケージ形態の半導体装置に、半導体チップで発生した熱を効率よく逃がすことが求められている。ＢＧＡパッケージ形態の半導体装置におけるこれまでの熱対策は、配線基板上に半導体チップを搭載して電気的に接続した後に、放熱装置を装着し、樹脂封止の際に前記放熱装置を一体にモールドするという、放熱装置を内蔵するものがほとんどであった。他には、図１４に示すように、半導体チップ７等を封止した封止樹脂３上に放熱装置４を取り付けて外気に放熱させるものがある（たとえば特許文献１参照）。
特開２００４−２６００５１号公報 In recent semiconductor devices (semiconductor integrated circuit devices), the amount of heat generated is increasing as the degree of integration increases and the operation speed increases. Therefore, the semiconductor device is required to efficiently release the heat generated in the semiconductor chip, for example, to a semiconductor device in the form of a BGA (Ball Grid Array) package. The conventional heat countermeasures for BGA package type semiconductor devices include mounting a semiconductor chip on a wiring board and electrically connecting it, then mounting a heat dissipation device, and molding the heat dissipation device integrally during resin sealing. Most of them have built-in heat dissipation devices. As another example, as shown in FIG. 14, there is one that attaches a heat radiating device 4 on a sealing resin 3 encapsulating a semiconductor chip 7 or the like to radiate heat to the outside air (see, for example, Patent Document 1).
JP 2004-260051 A

しかしながら、上述のように封止樹脂上に放熱装置を外付けする場合、封止樹脂の上面（以下、樹脂面という）に塗布する接着剤の粘度や量、放熱装置を取り付けるマウンタの実装押し込み量や実装荷重、樹脂面に残るトップゲート痕のバリなどの種々の要因で、半導体装置の全体高さに影響する樹脂面と放熱装置との間隔を一定にすることは難しく、放熱装置の傾きも生じ易い。   However, when the heat dissipation device is externally mounted on the sealing resin as described above, the viscosity and amount of the adhesive applied to the upper surface of the sealing resin (hereinafter referred to as the resin surface), the mounting push-in amount of the mounter to which the heat dissipation device is attached It is difficult to keep the distance between the resin surface and the heat dissipation device, which affects the overall height of the semiconductor device, due to various factors such as the mounting load, burrs on the top gate mark remaining on the resin surface, and the inclination of the heat dissipation device It is likely to occur.

また樹脂面には離型剤が残存するため、樹脂面と接着剤との接続は強固ではなく、熱衝撃試験で接着剤と放熱装置とが一体となって樹脂面から剥がれることもあり、放熱装置を外付けする構造における深刻な問題となっている。   In addition, since the release agent remains on the resin surface, the connection between the resin surface and the adhesive is not strong, and the adhesive and the heat dissipation device may be peeled off from the resin surface together in the thermal shock test. This is a serious problem in the structure for externally attaching the device.

本発明は上記問題を解決するもので、放熱装置を封止樹脂上に一定の高さおよび姿勢で取り付けることを目的とする。また封止樹脂と接着剤との接続を強固にすることを目的とする。   This invention solves the said problem, and aims at attaching a thermal radiation apparatus with fixed height and attitude | position on sealing resin. Moreover, it aims at strengthening the connection of sealing resin and an adhesive agent.

上記課題を解決するために、本発明の半導体装置は、配線基板と、前記配線基板上に搭載されて電気的に接続された半導体チップと、前記半導体チップおよびその電気的接続部を覆うように配線基板上に形成された封止樹脂と、前記封止樹脂上に接着剤により固着された放熱装置とを有する半導体装置において、前記封止樹脂と放熱装置の互いに対向した一方の面に２個以上の同一高さの突起部が形成されていて、これらの突起部が他方の面に接触していることを特徴とする。この構成によれば、対向面間に突起部の高さで規定される一定間隙が形成されるので、放熱装置は封止樹脂上に一定の高さおよび姿勢で固着される。よって、半導体装置の全体高さは一定となり、放熱装置の傾きも生じない。封止樹脂側に突起部が形成されている場合は、この突起部が接着剤に埋め込まれるので、封止樹脂と接着剤との接続強度が増す。   In order to solve the above problems, a semiconductor device of the present invention covers a wiring board, a semiconductor chip mounted on the wiring board and electrically connected thereto, and the semiconductor chip and its electrical connection portion. In a semiconductor device having a sealing resin formed on a wiring board and a heat radiating device fixed on the sealing resin with an adhesive, two pieces are provided on one surface of the sealing resin and the heat radiating device facing each other. The protrusions having the same height as described above are formed, and these protrusions are in contact with the other surface. According to this configuration, since the constant gap defined by the height of the protrusion is formed between the opposing surfaces, the heat dissipation device is fixed on the sealing resin at a constant height and posture. Therefore, the overall height of the semiconductor device is constant, and the inclination of the heat dissipation device does not occur. When the protrusion is formed on the sealing resin side, the protrusion is embedded in the adhesive, so that the connection strength between the sealing resin and the adhesive is increased.

突起部は半導体チップの周辺に相応する領域に配置されているのが好ましい。突起部は封止樹脂の上面に一体に成形されていてよい。あるいは、突起部は放熱装置の下面に金属加工によって形成されていてよい。また、放熱装置は厚み1.0mm以下の放熱板であって、突起部を有するように金型あるいは鋳型により形成されていてよい。   The protrusion is preferably arranged in a region corresponding to the periphery of the semiconductor chip. The protrusion may be integrally formed on the upper surface of the sealing resin. Alternatively, the protrusion may be formed on the lower surface of the heat dissipation device by metal processing. Further, the heat radiating device is a heat radiating plate having a thickness of 1.0 mm or less, and may be formed by a mold or a mold so as to have a protrusion.

本発明の他の半導体装置は、配線基板と、前記配線基板上に搭載されて電気的に接続された半導体チップと、前記半導体チップおよびその電気的接続部を覆うように配線基板上に形成された封止樹脂と、前記封止樹脂上に接着剤により固着された放熱装置とを有する半導体装置において、前記封止樹脂の上面に溝が形成されていることを特徴とする。この構成によれば、封止樹脂側の溝に接着剤が埋め込まれるので、封止樹脂と接着剤との接続強度が増す。   Another semiconductor device of the present invention is formed on a wiring board, a semiconductor chip mounted on the wiring board and electrically connected thereto, and covering the semiconductor chip and its electrical connection portion. In a semiconductor device having a sealing resin and a heat dissipation device fixed on the sealing resin by an adhesive, a groove is formed on an upper surface of the sealing resin. According to this configuration, since the adhesive is embedded in the groove on the sealing resin side, the connection strength between the sealing resin and the adhesive is increased.

溝は半導体チップの周辺に相応する領域に配置されているのが好ましい。また溝は封止樹脂を成形する封止金型により形成されていてよい。
放熱装置はＣｕあるいはＡｌからなるのが好ましい。放熱装置の表面にＮｉめっき処理が施されているのが好ましい。接着剤が熱伝導率の高い接着剤であるのが好ましい。 The groove is preferably arranged in a region corresponding to the periphery of the semiconductor chip. Moreover, the groove | channel may be formed of the sealing metal mold | die which shape | molds sealing resin.
The heat dissipation device is preferably made of Cu or Al. The surface of the heat dissipation device is preferably subjected to Ni plating treatment. It is preferable that the adhesive is an adhesive having high thermal conductivity.

上述の第１の構成の半導体装置は、（ａ）配線基板上に半導体チップを搭載し電気的に接続する工程と、（ｂ）前記配線基板上に前記半導体チップおよびその電気的接続部を覆う封止樹脂を成型金型を用いて形成する工程と、（ｃ）前記封止樹脂の上面に接着剤を塗布する工程と、（ｄ）前記接着剤が塗布された封止樹脂上に放熱装置を、互い対向する一方の面に予め形成された２個以上の突起部が他方の面に接触するように配置する工程と、（ｅ）前記封止樹脂と放熱装置との間の接着剤を硬化させる工程と、を含む製造工程によって製造することができる。（ｂ）の工程の後、封止樹脂の表面をプラズマ洗浄するのが好ましい。   In the semiconductor device having the above-described first configuration, (a) a step of mounting and electrically connecting a semiconductor chip on the wiring substrate; and (b) covering the semiconductor chip and its electrical connection portion on the wiring substrate. A step of forming a sealing resin using a mold, (c) a step of applying an adhesive on the upper surface of the sealing resin, and (d) a heat dissipation device on the sealing resin coated with the adhesive. And (e) an adhesive between the sealing resin and the heat dissipating device, wherein two or more protrusions formed in advance on one surface facing each other are in contact with the other surface; And a step of curing. After the step (b), the surface of the sealing resin is preferably plasma cleaned.

本発明の半導体装置は、封止樹脂と放熱装置の互いに対向した一方の面に２個以上の同一高さの突起部を形成したことにより、製造する際に、対向面間に突起部の高さで規定される一定間隙が形成され、半導体装置の全体高さは一定となり、放熱装置の傾きも生じない。封止樹脂側に突起部が形成されている場合は、この突起部が接着剤に埋め込まれるので、封止樹脂と接着剤との接続強度が増し、熱衝撃などによって放熱装置が接着剤と一体に封止樹脂との界面から脱落することを防止できる。   In the semiconductor device of the present invention, two or more protrusions having the same height are formed on one surface of the sealing resin and the heat dissipation device facing each other. A constant gap defined by the height is formed, the overall height of the semiconductor device is constant, and the heat dissipation device does not tilt. If a protrusion is formed on the sealing resin side, the protrusion is embedded in the adhesive, which increases the connection strength between the sealing resin and the adhesive, and the heat dissipation device is integrated with the adhesive by thermal shock or the like. Can be prevented from falling off from the interface with the sealing resin.

また本発明の半導体装置は、封止樹脂の上面に溝を形成したことにより、この溝に接着剤が埋め込まれることとなり、封止樹脂と接着剤との接続強度が増し、熱衝撃などによって放熱装置が接着剤と一体に封止樹脂との界面から脱落することを防止できる。   Further, in the semiconductor device of the present invention, since the groove is formed on the upper surface of the sealing resin, the adhesive is embedded in the groove, the connection strength between the sealing resin and the adhesive is increased, and heat is radiated by thermal shock or the like. It is possible to prevent the device from dropping from the interface with the sealing resin integrally with the adhesive.

以下、本発明の実施の形態を図面を参照しながら説明する。
（第１の実施形態）
図１は、本発明の第１の実施形態の半導体装置であって、放熱装置付きのＢＧＡパッケージ形態の半導体装置の全体構成を示す断面図である。 Embodiments of the present invention will be described below with reference to the drawings.
(First embodiment)
FIG. 1 is a cross-sectional view showing the entire configuration of a semiconductor device according to a first embodiment of the present invention, which is a BGA package type semiconductor device with a heat dissipation device.

この半導体装置は、両面に配線９が形成された配線基板２と、配線基板２の片面のチップ搭載領域にダイボンディング材８を介して搭載された半導体チップ７と、配線基板２の電極部と半導体チップ７とを電気的に接続した金属細線６と、半導体チップ３と金属細線６とを覆うように配線基板２の前記片面に形成された封止樹脂３と、封止樹脂３上に接着剤５により固着された板状の放熱装置４と、配線基板２のもう片面のランド１０（簡略に図示している）上に設けられた半田ボール１とを有している。   This semiconductor device includes a wiring board 2 having wirings 9 formed on both sides, a semiconductor chip 7 mounted on a chip mounting region on one side of the wiring board 2 via a die bonding material 8, and electrode portions of the wiring board 2. The fine metal wire 6 electrically connected to the semiconductor chip 7, the sealing resin 3 formed on the one surface of the wiring substrate 2 so as to cover the semiconductor chip 3 and the fine metal wire 6, and the adhesive on the sealing resin 3 It has a plate-like heat radiating device 4 fixed by an agent 5 and solder balls 1 provided on lands 10 (shown in a simplified manner) on the other side of the wiring board 2.

図２に模式的に示すように、封止樹脂３の上面には複数個の同一高さの突起部１４が形成されており、これらの突起部１４が放熱装置４の下面に接触している。突起部１４は接着剤５に埋め込まれている。   As schematically shown in FIG. 2, a plurality of protrusions 14 having the same height are formed on the upper surface of the sealing resin 3, and these protrusions 14 are in contact with the lower surface of the heat dissipation device 4. . The protrusion 14 is embedded in the adhesive 5.

また突起部１４は、図３にも示すように、円柱形のものが半導体チップ７の周辺に相応する領域に４個、半導体チップ７の各辺の中央から一定距離だけ離れて配置されている。突起部１４が半導体チップ７の周辺に配置されるのは放熱性をよくするためである。つまり、半導体チップ７の直上は突起部１４が存在しない分だけ接着剤５との接触面積が広くなるので、接着剤５として、Ａｇなどの金属が含まれている熱伝導率の高いもの、例えばいわゆる銀ペーストを用いれば、放熱効率が高まり、半導体チップ７からの熱が効率よく逃がされる。放熱装置４を搭載する際の圧力が半導体チップ７に影響することも避けられる。   As shown in FIG. 3, four protrusions 14 are arranged in a region corresponding to the periphery of the semiconductor chip 7, and are arranged at a predetermined distance from the center of each side of the semiconductor chip 7. . The reason why the protrusions 14 are arranged around the semiconductor chip 7 is to improve heat dissipation. That is, since the contact area with the adhesive 5 is widened just above the semiconductor chip 7 by the absence of the protrusions 14, the adhesive 5 contains a metal such as Ag and has a high thermal conductivity, for example, If so-called silver paste is used, the heat dissipation efficiency is increased, and the heat from the semiconductor chip 7 is efficiently released. It is also possible to avoid the pressure when mounting the heat dissipation device 4 from affecting the semiconductor chip 7.

放熱装置４は、放熱性が高いＣｕかＡｌを材料としたものが望ましいが、Ａｇなどの金属であってもかまわない。放熱装置４にめっきを施す場合は、マーキングの視認性をよくするために、Ｎｉめっきなどが望ましい。   The heat dissipating device 4 is preferably made of Cu or Al having high heat dissipating properties, but may be a metal such as Ag. In the case where the heat radiating device 4 is plated, Ni plating or the like is desirable in order to improve the visibility of the marking.

上記の半導体装置の製造方法を説明する。
図４（ａ）に示すように、配線基板２の片面の半導体チップ搭載領域にダイボンディング材８を介して半導体チップ７を搭載し、図４（ｂ）に示すように、半導体チップ７と配線基板２の配線９の電極部とを金ワイヤなどの金属細線６で電気的に接続する。 A method for manufacturing the semiconductor device will be described.
As shown in FIG. 4A, a semiconductor chip 7 is mounted on a semiconductor chip mounting region on one side of the wiring substrate 2 via a die bonding material 8, and the semiconductor chip 7 and the wiring are connected as shown in FIG. The electrode part of the wiring 9 of the substrate 2 is electrically connected by a fine metal wire 6 such as a gold wire.

次に、図４（ｃ）に示すように、封止金型（図示せず）を用いて、配線基板２上に半導体チップ７と金属細線６と配線９とを覆うように封止樹脂３をモールド成形する。封止樹脂３の上面には突起部１４を一体成形しておく。封止樹脂３の材料はたとえばエポキシ樹脂である。   Next, as shown in FIG. 4C, the sealing resin 3 is used to cover the semiconductor chip 7, the fine metal wires 6, and the wiring 9 on the wiring substrate 2 using a sealing mold (not shown). Is molded. A protrusion 14 is integrally formed on the upper surface of the sealing resin 3. The material of the sealing resin 3 is, for example, an epoxy resin.

次に、図４（ｄ）に示すように、封止樹脂３の上面にディスペンサーＤにより接着剤５を塗布し、図４（ｅ）に示すように、接着剤５の上に放熱装置４をマウンタＭにより位置合わせして搭載する。   Next, as shown in FIG. 4D, the adhesive 5 is applied to the upper surface of the sealing resin 3 by the dispenser D, and the heat dissipating device 4 is placed on the adhesive 5 as shown in FIG. Mount by aligning with Mounter M.

この際に、マウンタＭにより放熱装置４を封止樹脂３の上面の突起部１４に接触するまで押せば、放熱装置４の下面と封止樹脂３の上面との間に突起部１４の高さで規定される一定間隙が形成され、その一定間隙内で接着剤５が押し広げられる。封止樹脂３の上面に対する放熱装置４の高さおよび姿勢を一定にすることが可能である。   At this time, if the heat radiating device 4 is pushed by the mounter M until it contacts the protrusion 14 on the upper surface of the sealing resin 3, the height of the protrusion 14 is between the lower surface of the heat radiating device 4 and the upper surface of the sealing resin 3. Is formed, and the adhesive 5 is expanded in the fixed gap. The height and posture of the heat dissipation device 4 with respect to the upper surface of the sealing resin 3 can be made constant.

その状態で、図４（ｆ）に示すように、接着剤５を熱硬化させる。接着剤５の硬化後に、図４（ｇ）に示すように、配線基板２のランド１０に半田ボール１を搭載する。
以上のようにすると、上述のように封止樹脂３の上面に対する放熱装置４の高さおよび姿勢を一定にできるため、半導体装置の全体高さは一定になり、放熱装置４の傾きも生じない。また封止樹脂３側に形成された突起部１４が接着剤５に埋め込まれた状態となるので、封止樹脂３と接着剤５との界面での接続強度が増し、放熱装置４の脱落を防ぐことが出来る。放熱装置４によって半導体チップ７からの熱が効率よく逃がされるのは上述の通りである。 In this state, the adhesive 5 is thermally cured as shown in FIG. After the adhesive 5 is cured, the solder balls 1 are mounted on the lands 10 of the wiring board 2 as shown in FIG.
As described above, since the height and posture of the heat dissipation device 4 with respect to the upper surface of the sealing resin 3 can be made constant as described above, the overall height of the semiconductor device becomes constant, and the heat dissipation device 4 does not tilt. . Further, since the protrusion 14 formed on the sealing resin 3 side is embedded in the adhesive 5, the connection strength at the interface between the sealing resin 3 and the adhesive 5 is increased, and the heat dissipation device 4 is prevented from falling off. Can be prevented. As described above, the heat from the semiconductor chip 7 is efficiently released by the heat dissipation device 4.

放熱装置４には、上述の円柱形の突起部１４のほか、図３に示す半球形の突起部１５を同様に配置することも望ましい。円柱形、半球形であれば加工しやすい。図６に示すように、平面視してＬ形畝状の突起部１１を２個、半導体チップ７の周辺に配置しても構わない。放熱装置４の下面を封止樹脂３の上面に平行な向きに支持できれば突起部の形状や個数は問わないが、２個以上とするのが都合よい。   In addition to the cylindrical projection 14 described above, it is also desirable that the hemispherical projection 15 shown in FIG. If it is cylindrical or hemispherical, it is easy to process. As shown in FIG. 6, two L-shaped protrusions 11 in plan view may be arranged around the semiconductor chip 7. As long as the lower surface of the heat dissipation device 4 can be supported in a direction parallel to the upper surface of the sealing resin 3, the shape and number of the protrusions are not limited, but two or more are convenient.

（第２の実施形態）
図７は、本発明の第２の実施形態の半導体装置であって、放熱装置付きのＢＧＡパッケージ形態の半導体装置の全体構成を示す断面模式図である。 (Second Embodiment)
FIG. 7 is a schematic cross-sectional view illustrating the entire configuration of a semiconductor device according to a second embodiment of the present invention, which is a BGA package type with a heat dissipation device.

この半導体装置は、放熱装置４の下面に複数個の同一高さの突起部１６が形成されており、これらの突起部１６が封止樹脂３の上面に接触している。封止樹脂３の上面は平坦である。突起部１６は、図８にも示すように、半球形で、半導体チップ７の周辺に相応する領域に２個以上、ここでは４個配置されている。そのほかは第１の実施形態のものと同じである。   In this semiconductor device, a plurality of protrusions 16 having the same height are formed on the lower surface of the heat dissipation device 4, and these protrusions 16 are in contact with the upper surface of the sealing resin 3. The upper surface of the sealing resin 3 is flat. As shown in FIG. 8, the protrusions 16 are hemispherical, and two or more, four in this case, are arranged in a region corresponding to the periphery of the semiconductor chip 7. Others are the same as those of the first embodiment.

この半導体装置の製造方法は、第１の実施形態のものと概ね同じなので図示を省略するが、接着剤５を塗布した封止樹脂３に放熱装置４を押し付ければ、放熱装置４の下面の突起部１６が封止樹脂３の上面に接触して両面間に突起部１６の高さで規定される一定間隙が形成され、その一定間隙内で接着剤５が押し広げられることになり、封止樹脂４の上面に対する放熱装置４の高さおよび姿勢を一定にすることができる。   Since the manufacturing method of this semiconductor device is substantially the same as that of the first embodiment, the illustration thereof is omitted. However, if the heat dissipation device 4 is pressed against the sealing resin 3 coated with the adhesive 5, the lower surface of the heat dissipation device 4 is removed. The protrusion 16 comes into contact with the upper surface of the sealing resin 3 to form a constant gap defined by the height of the protrusion 16 between both surfaces, and the adhesive 5 is pushed and spread within the fixed gap. The height and posture of the heat dissipation device 4 with respect to the upper surface of the stop resin 4 can be made constant.

放熱装置４には、ここに示した半球形の突起部１６のほか、図９に示す円柱形の突起部１７を同様に配置することも好ましい。これら図７、図９に示す放熱装置４は、突起部１６あるいは突起部１７を鋳型を用いて一体成型する、あるいは金属バンプを溶接するという方法で形成される。図１０、図１１に示す放熱装置４のように、半球形の突起部１６あるいは円柱形の突起部１７を金型により形成することもできる。   In addition to the hemispherical protrusion 16 shown here, it is also preferable that the cylindrical protrusion 17 shown in FIG. The heat radiating device 4 shown in FIGS. 7 and 9 is formed by a method in which the protruding portion 16 or the protruding portion 17 is integrally formed using a mold or a metal bump is welded. As in the heat radiating device 4 shown in FIGS. 10 and 11, the hemispherical protrusion 16 or the cylindrical protrusion 17 can be formed by a mold.

（第３の実施形態）
図１２は、本発明の第３の実施形態の半導体装置であって、放熱装置付きのＢＧＡパッケージ形態の半導体装置の全体構成を示す断面模式図である。 (Third embodiment)
FIG. 12 is a schematic cross-sectional view illustrating the entire configuration of a semiconductor device according to a third embodiment of the present invention, which is a BGA package with a heat dissipation device.

この半導体装置は、封止樹脂４の上面に溝１３が形成されており、この上面に塗布された接着剤５を介して放熱装置４が固着されている。封止樹脂４，放熱装置４には上述したような突起部は形成されていない。そのほかは第１の実施形態のものと同じである。溝１３の形状は、平面視で、図１３に示す四角形などの多角形あるいは円形であったほうがよい。半導体チップ７はほとんど四角形であるため、封止樹脂４の上面という限られた面において、半導体チップ７や金属細線６の直上の領域への溝１３の配置を避けるためには（直上の領域に溝１３を配置すると金属細線６が露出する可能性がある）、多角形あるいは円形が望ましいのである。円形であれば加工もしやすい。   In this semiconductor device, a groove 13 is formed on the upper surface of the sealing resin 4, and the heat dissipating device 4 is fixed through an adhesive 5 applied on the upper surface. The protrusions as described above are not formed on the sealing resin 4 and the heat dissipation device 4. Others are the same as those of the first embodiment. The shape of the groove 13 is preferably a polygon such as a quadrangle shown in FIG. Since the semiconductor chip 7 is almost rectangular, in order to avoid disposing the groove 13 in the region immediately above the semiconductor chip 7 or the fine metal wire 6 on the limited surface such as the upper surface of the sealing resin 4 (in the region immediately above). If the groove 13 is disposed, the fine metal wire 6 may be exposed), and a polygon or a circle is desirable. If it is circular, it is easy to process.

この半導体装置を製造するときに、接着剤５を塗布した封止樹脂３に放熱装置４を押し付ければ、図示したように接着剤５が溝１３に入り込む。接着剤５の硬化後には、この溝１３内の接着剤５による接着面積の増大およびアンカー効果により、封止樹脂３と接着剤５との界面での接続強度が増し、熱衝撃などで放熱装置４が樹脂面から脱落することを防ぐことが出来る。   When the semiconductor device is manufactured, if the heat dissipation device 4 is pressed against the sealing resin 3 to which the adhesive 5 has been applied, the adhesive 5 enters the groove 13 as illustrated. After the adhesive 5 is cured, the connection strength at the interface between the sealing resin 3 and the adhesive 5 is increased due to an increase in the bonding area by the adhesive 5 in the groove 13 and the anchor effect, and a heat dissipation device due to thermal shock or the like. 4 can be prevented from falling off the resin surface.

なお、放熱装置４を各図に示したように板状体（放熱板）とする場合は、実装性を確保するために、厚みを１．０ｍｍ以下とすることが望ましい。放熱装置４は、放熱板のほか、放熱フィン、放熱ファンなどであってもよい。   In addition, when making the thermal radiation apparatus 4 into a plate-shaped body (radiation board) as shown in each figure, in order to ensure mountability, it is desirable to make thickness into 1.0 mm or less. The heat radiating device 4 may be a heat radiating plate, a heat radiating fin, a heat radiating fan, or the like.

樹脂封止工程の後に封止樹脂３の表面、特に上面をプラズマ洗浄することも、接着剤５との接続強度を増やすために望ましい。
半導体チップ７を各図に示したように金属細線６を介して配線基板２に接続するのでなく、フリップチップ接続しても構わない。 It is also desirable to increase the connection strength with the adhesive 5 by plasma cleaning the surface of the sealing resin 3, especially the upper surface, after the resin sealing step.
Instead of connecting the semiconductor chip 7 to the wiring board 2 via the fine metal wires 6 as shown in the drawings, it may be flip-chip connected.

第１〜第３の実施形態で説明した放熱構造は、作動する際に熱が発生する半導体装置であれば特に限定なく適用することができるが、特にＢＧＡパッケージ形態の半導体装置に有用である。ＱＦＰタイプなどのパッケージであれば下面に放熱装置を配置することが可能であるが、ＢＧＡタイプのパッケージは下面に放熱装置を配置することは不可能で、上面に配置するしかないためである。   The heat dissipation structure described in the first to third embodiments can be applied without particular limitation as long as it is a semiconductor device that generates heat when operating, but is particularly useful for a semiconductor device in the form of a BGA package. This is because a heat dissipation device can be disposed on the lower surface of a package such as a QFP type, but a heat dissipation device cannot be disposed on the lower surface of a BGA type package, but only on the upper surface.

本発明の半導体装置及びその製造方法は、効率よい放熱構造を実現できるとともに、半導体装置の全体高さが一定になり、放熱装置の傾きや脱落も防ぎ得るものであり、作動する際に発熱する各種の半導体装置、特にＢＧＡパッケージ形態の半導体装置に有用である。   The semiconductor device and the manufacturing method thereof according to the present invention can realize an efficient heat dissipation structure, the entire height of the semiconductor device is constant, and the heat dissipation device can be prevented from tilting or falling off, and generates heat during operation. The present invention is useful for various semiconductor devices, particularly BGA package type semiconductor devices.

本発明の第１の実施形態にかかる半導体装置の構成を示す断面図Sectional drawing which shows the structure of the semiconductor device concerning the 1st Embodiment of this invention. 図１の半導体装置の断面模式図1 is a schematic cross-sectional view of the semiconductor device of FIG. 図１の半導体装置を放熱装置を除いて示す上面図1 is a top view showing the semiconductor device of FIG. 1 excluding a heat dissipation device. 図１の半導体装置の製造方法を示す工程断面図Sectional drawing which shows the manufacturing method of the semiconductor device of FIG. 図１の半導体装置の変形例を示す断面模式図1 is a schematic cross-sectional view showing a modification of the semiconductor device of FIG. 図１の半導体装置の他の変形例を放熱装置を除いて示す上面図The top view which shows the other modification of the semiconductor device of FIG. 1 except a heat sink. 本発明の第２の実施形態にかかる半導体装置の構成を示す断面模式図Sectional model which shows the structure of the semiconductor device concerning the 2nd Embodiment of this invention. 図７の半導体装置の放熱装置の下面図7 is a bottom view of the heat dissipation device of the semiconductor device of FIG. 図７の半導体装置の変形例を示す断面模式図7 is a schematic cross-sectional view showing a modification of the semiconductor device of FIG. 図７の半導体装置の他の変形例を示す断面模式図FIG. 7 is a schematic cross-sectional view showing another modification of the semiconductor device of FIG. 図７の半導体装置のさらに他の変形例を示す断面模式図FIG. 7 is a schematic cross-sectional view showing still another modification of the semiconductor device of FIG. 本発明の第３の実施形態にかかる半導体装置の構成を示す断面模式図Sectional model which shows the structure of the semiconductor device concerning the 3rd Embodiment of this invention. 図１２の半導体装置を放熱装置を除いて示す上面図12 is a top view showing the semiconductor device of FIG. 12 excluding the heat dissipation device. 従来の半導体装置を示す断面図Sectional view showing a conventional semiconductor device

符号の説明Explanation of symbols

２ 配線基板
３ 封止樹脂
４ 放熱装置
５ 接着剤
６ 金属細線
７ 半導体チップ
８ ダイボンディング材
１３ 溝
１４，１５，１６，１７ 突起部 2 Wiring Board 3 Sealing Resin 4 Heat Dissipation Device 5 Adhesive 6 Metal Fine Wire 7 Semiconductor Chip 8 Die Bonding Material 13 Groove 14, 15, 16, 17 Protrusion

Claims (9)

配線基板と、前記配線基板上に搭載されて電気的に接続された半導体チップと、前記半導体チップおよびその電気的接続部を覆うように配線基板上に形成された封止樹脂と、前記封止樹脂上に接着剤により固着された放熱装置とを有する半導体装置において、
前記封止樹脂と放熱装置の互いに対向した一方の面に２個以上の同一高さの突起部が形成されていて、これらの突起部が他方の面に接触していることを特徴とする半導体装置。 A wiring board; a semiconductor chip mounted on and electrically connected to the wiring board; a sealing resin formed on the wiring board so as to cover the semiconductor chip and its electrical connection; and the sealing In a semiconductor device having a heat dissipation device fixed on a resin by an adhesive,
Two or more protrusions having the same height are formed on one surface of the sealing resin and the heat dissipation device facing each other, and these protrusions are in contact with the other surface. apparatus. 突起部は半導体チップの周辺に相応する領域に配置されていることを特徴とする請求項１記載の半導体装置。   2. The semiconductor device according to claim 1, wherein the protrusion is arranged in a region corresponding to the periphery of the semiconductor chip. 配線基板と、前記配線基板上に搭載されて電気的に接続された半導体チップと、前記半導体チップおよびその電気的接続部を覆うように配線基板上に形成された封止樹脂と、前記封止樹脂上に接着剤により固着された放熱装置とを有する半導体装置において、
前記封止樹脂の上面に溝が形成されていることを特徴とする半導体装置。 A wiring board; a semiconductor chip mounted on and electrically connected to the wiring board; a sealing resin formed on the wiring board so as to cover the semiconductor chip and its electrical connection; and the sealing In a semiconductor device having a heat dissipation device fixed on a resin by an adhesive,
A semiconductor device, wherein a groove is formed on an upper surface of the sealing resin. 溝は半導体チップの周辺に相応する領域に配置されていることを特徴とする請求項３記載の半導体装置。   4. The semiconductor device according to claim 3, wherein the groove is disposed in a region corresponding to the periphery of the semiconductor chip. 放熱装置がＣｕあるいはＡｌからなることを特徴とする請求項１または請求項３のいずれかに記載の半導体装置。   4. The semiconductor device according to claim 1, wherein the heat dissipation device is made of Cu or Al. 放熱装置の表面にＮｉめっき処理が施されていることを特徴とする請求項５記載の半導体装置。   6. The semiconductor device according to claim 5, wherein the surface of the heat dissipation device is Ni-plated. 接着剤が熱伝導率の高い接着剤であることを特徴とする請求項１または請求項３のいずれかに記載の半導体装置。   4. The semiconductor device according to claim 1, wherein the adhesive is an adhesive having a high thermal conductivity. 請求項１記載の半導体装置の製造方法であって、
（ａ）配線基板上に半導体チップを搭載し電気的に接続する工程と、
（ｂ）前記配線基板上に前記半導体チップおよびその電気的接続部を覆う封止樹脂を成型金型を用いて形成する工程と、
（ｃ）前記封止樹脂の上面に接着剤を塗布する工程と、
（ｄ）前記接着剤が塗布された封止樹脂上に放熱装置を互い対向する一方の面に予め形成された２個以上の突起部が他方の面に接触するように配置する工程と、
（ｅ）前記封止樹脂と放熱装置との間の接着剤を硬化させる工程と、を含むことを特徴とする半導体装置の製造方法。 A method of manufacturing a semiconductor device according to claim 1,
(A) mounting and electrically connecting a semiconductor chip on a wiring board;
(B) forming a sealing resin that covers the semiconductor chip and its electrical connection portion on the wiring substrate using a molding die;
(C) applying an adhesive to the top surface of the sealing resin;
(D) a step of arranging the heat dissipation device on the sealing resin to which the adhesive is applied so that two or more protrusions formed in advance on one surface facing each other are in contact with the other surface;
(E) curing the adhesive between the sealing resin and the heat dissipation device, and a method of manufacturing a semiconductor device. （ｂ）の工程の後、封止樹脂の表面をプラズマ洗浄することを特徴とする請求項８記載の半導体装置の製造方法。   9. The method of manufacturing a semiconductor device according to claim 8, wherein after the step (b), the surface of the sealing resin is subjected to plasma cleaning.
JP2007278247A 2007-10-26 2007-10-26 Semiconductor apparatus and method of manufacturing the same Pending JP2009105350A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127696A1 (en) * 2011-03-24 2012-09-27 三菱電機株式会社 Power semiconductor module and power unit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127696A1 (en) * 2011-03-24 2012-09-27 三菱電機株式会社 Power semiconductor module and power unit device
JP5701377B2 (en) * 2011-03-24 2015-04-15 三菱電機株式会社 Power semiconductor module and power unit device
US9129931B2 (en) 2011-03-24 2015-09-08 Mitsubishi Electric Corporation Power semiconductor module and power unit device

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