JP2009094402A - Wire bonding method and wire bonding apparatus - Google Patents

Wire bonding method and wire bonding apparatus Download PDF

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JP2009094402A
JP2009094402A JP2007265588A JP2007265588A JP2009094402A JP 2009094402 A JP2009094402 A JP 2009094402A JP 2007265588 A JP2007265588 A JP 2007265588A JP 2007265588 A JP2007265588 A JP 2007265588A JP 2009094402 A JP2009094402 A JP 2009094402A
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JP5176470B2 (en
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Kenji Matsuo
研二 松生
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NEC Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a wire bonding method and apparatus that detects abnormality to occur in bonding before the bonding is carried out by applying an ultrasonic wave. <P>SOLUTION: The wire bonding apparatus 1 includes a bonding head 2, detector 3 which detects position information on the bonding head 2, a control circuit, etc. The bonding head 2 includes a bonding tool 4 for bringing a ball portion 11a of a wire 11 into contact with a bonding portion such as an electrode, and moves up and down the bonding tool 4. The control circuit acquires an operation track of the bonding head for a period from the contacting of the ball portion of the wire 11 with the bonding portion to before the application of the ultrasonic wave. Further, the control circuit compares the acquired operation track A with a normal operation track B which is previously acquired to decide whether the operation is normal while taking bonding conditions into consideration and starts applying US vibrations once it is decided that the operation is normal, but generates an alarm once it is decided that the operation is abnormal and quits the wire bonding. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、ワイヤボンディング方法及びワイヤボンディング装置に関し、更に詳しくは、ワイヤの接合異常を検出可能なワイヤボンディング方法及びワイヤボンディング装置に関する。   The present invention relates to a wire bonding method and a wire bonding apparatus, and more particularly to a wire bonding method and a wire bonding apparatus capable of detecting a wire bonding abnormality.

ワイヤボンディング装置は、後工程に含まれるボンディング工程で用いられ、例えば、半導体チップの表面周辺部に配置された電極等のボンディング部に、金属線（ワイヤ）を接続する。また、ワイヤボンディング装置は、ワイヤ不着を検知する機能を有しており、ボンディング部にワイヤが接続されていない不良品を検知して、その後の工程に不良品が流出することを防止する。   The wire bonding apparatus is used in a bonding process included in a subsequent process, and for example, connects a metal wire (wire) to a bonding portion such as an electrode disposed on the periphery of the surface of a semiconductor chip. Further, the wire bonding apparatus has a function of detecting wire non-bonding, detects a defective product in which no wire is connected to the bonding portion, and prevents the defective product from flowing out in the subsequent process.

ワイヤ不着を検知する方法としては、ボンディングツールの真上に配置され、ワイヤを挟持するカットクランプを通して、ワイヤに電流を流し、ワイヤの接続時と不着時とにおける応答波形の違いに基づいて、ワイヤ不着か否かを判定する方法が知られている。   As a method of detecting wire non-bonding, a current is passed through the wire through a cut clamp that is placed directly above the bonding tool and clamps the wire. Based on the difference in response waveform between wire connection and non-bonding, the wire There is known a method for determining whether it is non-delivery.

しかし、上記方法では、微小なゴミの上や、微小な傷で生じた凹部でボンディングを行った場合であっても、ボンディング部にワイヤが少しでも接触していれば、電気的に接続していることになり、異常とは判定されない。このようなボンディング工程を経た半導体チップは、判定時には問題が発見されなくても、その後の工程での加熱による熱膨張や経年劣化により、異常が発生しやすい。つまり、上記方法では、本来不良品である半導体チップを良品として判定してしまう可能性があった。   However, in the above method, even when bonding is performed on a minute dust or a concave portion generated by a minute scratch, if the wire is even in contact with the bonding portion, it is electrically connected. Therefore, it is not determined as abnormal. Even if a problem is not found at the time of determination, a semiconductor chip that has undergone such a bonding process is likely to be abnormal due to thermal expansion or aging due to heating in subsequent processes. That is, in the above method, there is a possibility that a semiconductor chip which is originally a defective product is determined as a non-defective product.

特許文献１には、ボンディングツールで支持したワイヤのボール部を、ボンディングツールの下降動によりボンディング部に接触させた後に、所定のボンディング荷重で押圧しながら超音波振動を印加し、これに伴うボール部の潰し変形量により、接合の良否判定を行う技術が記載されている。この技術では、ボール部の潰し変形量を、最適な潰し変形量と比較することで良否判定を行うので、ワイヤとボンディング部とが電気的に接続されているか否かで判定を行う前記方法に比べて、信頼性が高い。   In Patent Document 1, the ball portion of the wire supported by the bonding tool is brought into contact with the bonding portion by the downward movement of the bonding tool, and then ultrasonic vibration is applied while pressing with a predetermined bonding load. A technique is described in which the quality of the joint is determined based on the amount of deformation of the portion. In this technique, since the pass / fail determination is performed by comparing the amount of deformation of the ball portion with the optimum amount of deformation of the ball, the method for determining whether the wire and the bonding portion are electrically connected is used. Compared with high reliability.

特開２０００−２６９２６２号公報JP 2000-269262 A

特許文献１の技術では、ワイヤがボンディング部に接触した位置（タッチ位置）を基準として潰し変形量曲線を演算しているので、タッチ位置が変化した場合には、潰し変形量曲線も変化することになる。また、タッチ位置は、リードフレームや半導体チップの高さのばらつきだけでなく、ボンディング部に付着した微細なゴミや、微細な傷によっても変化する。このため、タッチ位置が変化した原因をタッチ位置の高さから判別することは困難であるから、例えば、微細なゴミや傷が原因で変化したタッチ位置を基準とする潰し変形量曲線で良否判定を行った場合には、判定の信頼性が低下する。   In the technique of Patent Document 1, since the crushing deformation amount curve is calculated on the basis of the position (touch position) where the wire contacts the bonding portion, the crushing deformation amount curve also changes when the touch position changes. become. Further, the touch position changes not only due to variations in the height of the lead frame and the semiconductor chip, but also due to fine dust adhering to the bonding portion and fine scratches. For this reason, it is difficult to determine the cause of the change in the touch position from the height of the touch position. For example, the pass / fail judgment is made with a crushing deformation amount curve based on the touch position changed due to fine dust or scratches. If the determination is performed, the reliability of the determination is lowered.

さらに、特許文献１では、超音波振動を印加してボール部を潰した後に、はじめてボンディングの良否が判定されるので、判定されたときには、既に不良品が発生していることになる。   Further, in Patent Document 1, since the quality of bonding is determined only after the ultrasonic vibration is applied and the ball portion is crushed, when it is determined, a defective product has already occurred.

本発明は、超音波を印加してボンディングを行う前に、ボンディングで発生する異常を検出できるワイヤボンディング方法及びワイヤボンディング装置を提供することを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to provide a wire bonding method and a wire bonding apparatus that can detect an abnormality occurring in bonding before applying ultrasonic waves to perform bonding.

上記目的を達成するために、本発明のワイヤボンディング方法は、超音波を印加してワイヤボンディングを行うワイヤボンディング方法であって、
ボンディングツールに支持されたワイヤの一端を、ボンディング部に接触させるステップと、
前記接触させた後の前記ボンディングツールの動作軌跡を取得するステップと、
前記取得した動作軌跡の良否を判定するステップと、
前記判定ステップで良と判定されると、超音波の印加に移行するステップと、を有することを特徴とする。 In order to achieve the above object, a wire bonding method of the present invention is a wire bonding method for performing wire bonding by applying an ultrasonic wave,
Contacting one end of the wire supported by the bonding tool with the bonding part;
Obtaining an operation trajectory of the bonding tool after the contact;
Determining the quality of the acquired motion trajectory;
A step of shifting to application of an ultrasonic wave when it is determined to be good in the determination step.

また、本発明のワイヤボンディング装置は、超音波を印加してワイヤボンディングを行うワイヤボンディング装置であって、
ワイヤの一端をボンディング部に接触させるボンディングツールと、
前記ワイヤが前記ボンディング部に接触した後の前記ボンディングツールの動作軌跡を計測する軌跡計測部と、
前記軌跡計測部が取得した動作軌跡の良否を判定する判定部とを備え、
前記判定部での判定結果が良であると、超音波を印加してボンディングを行うことを特徴とする。 The wire bonding apparatus of the present invention is a wire bonding apparatus that performs wire bonding by applying ultrasonic waves,
A bonding tool for bringing one end of the wire into contact with the bonding portion;
A trajectory measurement unit that measures an operation trajectory of the bonding tool after the wire contacts the bonding unit;
A determination unit that determines the quality of the motion trajectory acquired by the trajectory measurement unit,
When the determination result in the determination unit is good, bonding is performed by applying an ultrasonic wave.

本発明のワイヤボンディング方法及びワイヤボンディング装置によると、ワイヤの一端がボンディング部に接触した後から超音波を印加する前までの、ボンディングツールの動作軌跡を取得して良否判定を行うので、超音波を印加してボンディングを行う前に、ボンディングで発生する異常を検出できる。また、異常を検出すれば、ボンディングを中止し、不良品の発生を防止できる。   According to the wire bonding method and the wire bonding apparatus of the present invention, since the operation trajectory of the bonding tool is acquired after the end of the wire comes into contact with the bonding portion and before the ultrasonic wave is applied, the quality is determined. An abnormality occurring in bonding can be detected before bonding is performed by applying. Also, if an abnormality is detected, bonding can be stopped and the occurrence of defective products can be prevented.

以下、図面を参照し、本発明の実施の形態について詳細に説明する。図１は、本発明の実施形態に係るワイヤボンディング装置の概略を示す構成図である。図２は、ワイヤボンディング装置の一部を拡大して示す図である。ワイヤボンディング装置１は、半導体チップ製造工程に含まれるボンディング工程で用いられる装置であって、例えば、ボンディングの対象となる半導体チップ１０の表面周辺部に配置された電極等のボンディング部１０ａ（図２参照）に、ワイヤ１１を接続する機能を有する。ワイヤ１１は、導電性を有する材質であれば、特に限定されず、金以外にも、銅、アルミ等で形成してもよい。また、半導体チップ１０は、リードフレーム１２に搭載されている。リードフレーム１２は、ヒータにより加熱される金属製のヒータブロック１３に載置されている。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a configuration diagram showing an outline of a wire bonding apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged view showing a part of the wire bonding apparatus. The wire bonding apparatus 1 is an apparatus used in a bonding process included in a semiconductor chip manufacturing process. For example, a bonding unit 10a (FIG. 2) such as an electrode or the like disposed on the periphery of the surface of a semiconductor chip 10 to be bonded. Reference) has a function of connecting the wire 11. The wire 11 is not particularly limited as long as it is a conductive material, and may be formed of copper, aluminum or the like in addition to gold. The semiconductor chip 10 is mounted on the lead frame 12. The lead frame 12 is placed on a metal heater block 13 heated by a heater.

ワイヤボンディング装置１は、接合ヘッド２と、接合ヘッド２の位置情報を検出する検出器３と、図示しない制御回路等とを備える。接合ヘッド２は、ワイヤ１１の一端を支持するボンディングツール４を含み、ボンディングツール４を上下動させる機構を有する。また、ワイヤ１１の一端には、図２に示すように、放電等によりボール部１１ａが形成されている。ワイヤ１１のボール部１１ａは、接合ヘッド２の下降動により、半導体チップ１０のボンディング部１０ａに接触（タッチ）することになる。このとき、制御回路は、検出器３からの位置情報に基づいてタッチ検出を行う。   The wire bonding apparatus 1 includes a bonding head 2, a detector 3 that detects position information of the bonding head 2, a control circuit (not shown), and the like. The bonding head 2 includes a bonding tool 4 that supports one end of the wire 11 and has a mechanism for moving the bonding tool 4 up and down. Also, as shown in FIG. 2, a ball portion 11a is formed at one end of the wire 11 by discharge or the like. The ball portion 11 a of the wire 11 comes into contact (touch) with the bonding portion 10 a of the semiconductor chip 10 by the downward movement of the bonding head 2. At this time, the control circuit performs touch detection based on the position information from the detector 3.

制御回路は、詳細は後述するが、上記タッチ検出後から、超音波（ＵＳ：ultrasonic）振動を印加するまでの間に、検出器３からの位置情報に基づいて接合ヘッド２の動作軌跡を取得し、この取得した動作軌跡と、ボンディング条件を考慮して予め設定された正常な動作軌跡とを比較することにより、ボンディング前の段階で良否判定を行う。なお、接合ヘッド２の動作軌跡は、接合ヘッド２の一部であるボンディングツール４の動作軌跡と同様となる。   Although the details will be described later, the control circuit acquires the operation locus of the bonding head 2 based on the positional information from the detector 3 after the touch detection until the application of ultrasonic (US) vibration. Then, by comparing the acquired operation trajectory with a normal operation trajectory set in advance in consideration of bonding conditions, pass / fail determination is performed at a stage before bonding. The operation locus of the bonding head 2 is the same as the operation locus of the bonding tool 4 that is a part of the bonding head 2.

ボンディング条件とは、ワイヤ１１の径、ボール部１１ａの径、サーチ速度、サーチ荷重、ボンディング荷重等、ボンディングに関わる全てのパラメータを含む。ワイヤ１１のボール部１１ａをボンディング部１０ａに接触させるとき、その接触の際の速度や荷重は、ボンディングに影響を与える。このため、ボンディング部１０ａの高さが半導体チップ１０（製品）によってばらつきがあっても、ボール部１１ａがボンディング部１０ａに同じ速度で接触するように制御される。この速度がサーチ速度である。また、接触の際に、荷重を必要以上に加えないように荷重制限値が設定される。この荷重制限値がサーチ荷重である。ボンディング荷重は、タッチ検出後に、ボンディングツール４をボンディング部１０ａに押圧するために設定される荷重である。   The bonding conditions include all parameters related to bonding, such as the diameter of the wire 11, the diameter of the ball portion 11a, the search speed, the search load, and the bonding load. When the ball portion 11a of the wire 11 is brought into contact with the bonding portion 10a, the speed and load at the time of the contact affect the bonding. For this reason, even if the height of the bonding part 10a varies depending on the semiconductor chip 10 (product), the ball part 11a is controlled to contact the bonding part 10a at the same speed. This speed is the search speed. Further, a load limit value is set so that a load is not applied more than necessary at the time of contact. This load limit value is the search load. The bonding load is a load set for pressing the bonding tool 4 against the bonding portion 10a after touch detection.

図３は、接合ヘッド２の動作軌跡を示す図である。図中、横方向は時間の経過を示し、縦方向は接合ヘッド２の位置を示す。まず、接合ヘッド２の下降動により、時刻ｔ０でタッチ検出が行われ、そのときの位置をタッチ検出位置Ｐとする。ボンディングツール４の制御モードは、タッチ検出される時刻ｔ０までは、ある目標軌道に追従するように位置が制御される位置制御Ｃａとなり、時刻ｔ０以降では、設定されたボンディング荷重でボンディングツール４をボンディング部１０ａに押圧する荷重制御Ｃｂに移行する。そして、ボンディングツール４は、位置制御Ｃａから荷重制御Ｃｂへの移行に伴い勢いがついているので、タッチ検出位置Ｐでは停止せずに、残留振動を発生させることになる。   FIG. 3 is a diagram illustrating an operation locus of the bonding head 2. In the figure, the horizontal direction indicates the passage of time, and the vertical direction indicates the position of the bonding head 2. First, touch detection is performed at time t <b> 0 by the downward movement of the bonding head 2, and the position at that time is set as a touch detection position P. The control mode of the bonding tool 4 is position control Ca in which the position is controlled so as to follow a certain target trajectory until the time t0 when the touch is detected, and after the time t0, the bonding tool 4 is set with the set bonding load. The process proceeds to load control Cb for pressing the bonding part 10a. And since the bonding tool 4 has gained momentum with the transition from the position control Ca to the load control Cb, the bonding tool 4 does not stop at the touch detection position P and generates residual vibration.

次に、ボンディングツール４は、時刻ｔ１で最下点Ｎに到達し、その後、時刻ｔ２で最上点Ｍに到達する。この最下点Ｎから最上点Ｍまでの距離をバウンド距離Ｄａという。さらに、ボンディングツール４は、時刻ｔ３で整定位置Ｑに留まる。整定位置Ｑとは、ボンディング荷重によりボール部１１ａが多少変形しつつ、残留振動が収まり、ボンディング荷重とつりあった位置をいう。   Next, the bonding tool 4 reaches the lowest point N at time t1, and then reaches the highest point M at time t2. This distance from the lowest point N to the highest point M is called a bound distance Da. Further, the bonding tool 4 remains at the settling position Q at time t3. The settling position Q is a position where the ball portion 11a is slightly deformed by the bonding load and the residual vibration is settled and balanced with the bonding load.

その後、整定位置Ｑに留まった状態のボンディングツール４に対して、適宜の期間ＵＳ振動を印加することで、ボンディングツール４は、図中矢印に示すように沈み込む。これにより、ボール部１１ａは、潰れ変形して半導体チップ１０のボンディング部１０ａと接合する。   Thereafter, by applying US vibration for an appropriate period to the bonding tool 4 remaining in the settling position Q, the bonding tool 4 sinks as indicated by an arrow in the figure. Thereby, the ball part 11 a is crushed and deformed and joined to the bonding part 10 a of the semiconductor chip 10.

次に、時刻ｔ０〜ｔ３で発生する残留振動について説明する。荷重制御Ｃｂにより設定されたボンディング荷重で、ボンディングツール４をボンディング部１０ａに押圧することは、例えるなら、テーブルの上にボールを落とすようなものである。これは、テーブルに接触した後のボールの振動が、テーブルに接触する際の速度や、ボール及びテーブルの材質等により変化することを意味する。つまり、接合ヘッド２の残留振動は、接合ヘッド２を下降させる速度を遅くすればする程、減少することになる。しかも、残留振動は、製造工程において本来望ましいものではないから、この下降速度を遅くしても構わないはずである。   Next, residual vibration that occurs at times t0 to t3 will be described. For example, pressing the bonding tool 4 against the bonding portion 10a with the bonding load set by the load control Cb is like dropping a ball on the table. This means that the vibration of the ball after coming into contact with the table varies depending on the speed at which the ball comes into contact with the table, the material of the ball and the table, and the like. That is, the residual vibration of the bonding head 2 decreases as the speed of lowering the bonding head 2 is decreased. In addition, since the residual vibration is not originally desirable in the manufacturing process, the lowering speed may be slow.

しかし、下降速度を遅くすると、生産性が悪くなるため、生産性を考慮すれば、できる限り速くする必要もある。このため、ワイヤ１１のボール部１１ａの変形により勢いを吸収できるまで速度を遅くすれば、残留振動は発生しないが、それ以上に生産性を高めようとすれば、ある程度の残留振動の発生は許容する必要がある。   However, if the descending speed is slowed down, the productivity becomes worse. Therefore, if the productivity is taken into consideration, it is necessary to make it as fast as possible. For this reason, if the speed is reduced until the moment can be absorbed by the deformation of the ball portion 11a of the wire 11, residual vibration does not occur. However, if the productivity is further increased, some residual vibration is allowed. There is a need to.

本発明にあたり、残留振動には、ボンディング接合物の不具合が反映されることが実験評価の結果により確認された。ボンディング接合物とは、ワイヤ１１、ワイヤ１１のボール部１１ａ、半導体チップ１０のボンディング部１０ａ、リードフレーム１２、ヒータブロック１３、及びボンディングツール４等、ボンディングに関するもの全般を含む。   In the present invention, it has been confirmed from the results of experimental evaluation that the residual vibration reflects defects in the bonded product. The bonding joint includes all of those related to bonding, such as the wire 11, the ball portion 11a of the wire 11, the bonding portion 10a of the semiconductor chip 10, the lead frame 12, the heater block 13, and the bonding tool 4.

本実施形態のワイヤボンディング装置１では、この残留振動に着目し、ＵＳ振動を印加してボンディングを行う前に、ボンディングの良否判定を行う。以下、このワイヤボンディング装置１の動作について詳細に説明する。図４は、本発明の実施形態に係るワイヤボンディング方法の各処理を示すフローチャートである。まず、接合ヘッド２のボンディングツール４が位置制御Ｃａにより下降動し、ボンディングツール４に支持されたワイヤ１１のボール部１１ａを半導体チップ１０のボンディング部１０ａに接触させる（Ｓ１）。ステップＳ１でボール部１１ａとボンディング部１０ａとが接触したことを検知したとき、ボンディングツール４は荷重制御Ｃｂに切り替わる。次に、制御回路内の軌跡計測部は、検出器３からの位置情報を連続的なデータとして取得し、この位置情報に基づいて、上記残留振動によって発生する接合ヘッド２の動作軌跡を取得する（Ｓ２）。   In the wire bonding apparatus 1 of this embodiment, paying attention to this residual vibration, the bonding quality is judged before bonding is performed by applying US vibration. Hereinafter, the operation of the wire bonding apparatus 1 will be described in detail. FIG. 4 is a flowchart showing each process of the wire bonding method according to the embodiment of the present invention. First, the bonding tool 4 of the bonding head 2 is moved down by the position control Ca, and the ball portion 11a of the wire 11 supported by the bonding tool 4 is brought into contact with the bonding portion 10a of the semiconductor chip 10 (S1). When it is detected in step S1 that the ball portion 11a and the bonding portion 10a are in contact with each other, the bonding tool 4 is switched to the load control Cb. Next, the trajectory measuring unit in the control circuit acquires the position information from the detector 3 as continuous data, and acquires the operation trajectory of the bonding head 2 generated by the residual vibration based on the position information. (S2).

次に、制御回路内の判定部は、ステップＳ２で取得した接合ヘッド２の動作軌跡の良否判定を行う（Ｓ３）。そして、制御回路は、良否判定の結果、良好と判定された場合には（Ｓ３、Ｙ）、ＵＳ振動の印加に移行し（Ｓ４）、不良と判定された場合には（Ｓ３、Ｎ）、アラームによる警報を発して（Ｓ５）、ワイヤボンディングを中止する（Ｓ６）。   Next, the determination unit in the control circuit determines the quality of the operation trajectory of the bonding head 2 acquired in step S2 (S3). When the control circuit determines that the result is good (S3, Y), the control circuit shifts to US vibration application (S4). When the control circuit is determined to be defective (S3, N), An alarm is issued (S5), and wire bonding is stopped (S6).

以下、ステップＳ３の良否判定について説明する。ステップＳ３の良否判定は、取得した接合ヘッド２の動作軌跡と、ボンディング条件を考慮した実験や解析等によって予め把握された正常な動作軌跡とを比較することで行われる。図５は、取得した接合ヘッド２の動作軌跡と予め把握された正常な動作軌跡とを比較した状態を示す図である。図中、正常な動作軌跡Ａを点線で示し、取得した動作軌跡Ｂを実線で示した。ここでは、一例として、図３で示したバウンド距離Ｄａに着目して比較を行った。   Hereinafter, the quality determination in step S3 will be described. The pass / fail determination in step S3 is performed by comparing the acquired movement trajectory of the bonding head 2 with a normal movement trajectory grasped in advance by an experiment, analysis, or the like considering the bonding conditions. FIG. 5 is a diagram showing a state in which the acquired operation trajectory of the joining head 2 is compared with a normal operation trajectory grasped in advance. In the figure, the normal operation locus A is indicated by a dotted line, and the acquired operation locus B is indicated by a solid line. Here, as an example, the comparison was performed focusing on the bound distance Da shown in FIG.

具体的には、正常な動作軌跡Ａは、図示のように、時刻ｔ０でのタッチ検出後、時刻ｔ１Ａで最下点ＮＡに到達し、その後、時刻ｔ２Ａで最上点ＭＡに到達した。この最下点ＮＡから最上点ＭＡまでの距離がバウンド距離ＤａＡとなる。これに対して、取得した動作軌跡Ｂは、図示のように、時刻ｔ１Ｂで最下点ＮＢに到達し、その後、時刻ｔ２Ｂで最上点ＭＢに到達した。この最下点ＮＢから最上点ＭＢまでの距離がバウンド距離ＤａＢとなる。   Specifically, as shown in the figure, the normal motion locus A reached the lowest point NA at time t1A after touch detection at time t0, and then reached the highest point MA at time t2A. The distance from the lowest point NA to the highest point MA is the bound distance DaA. On the other hand, as shown in the figure, the acquired motion trajectory B reached the lowest point NB at time t1B, and then reached the highest point MB at time t2B. The distance from the lowest point NB to the highest point MB is the bound distance DaB.

バウンド距離Ｄａは、実験評価の結果により、リードフレーム１２のアイランドが浮いていた場合や、樹脂ゴミ上にボンディングした場合には、正常時と明らかに異なることが確認されている。一例として、樹脂ゴミ上にボンディングした場合には、ゴミの変形によるクッションが働くためにバウンド距離Ｄａが大きくなるような異常な残留振動が発生する。一方、ゴミがない正常な状態でボンディングした場合には、変形するのはワイヤ１１のボール部１１ａのみであるから、バウンド距離Ｄａは大きくならない。   As a result of experimental evaluation, it has been confirmed that the bounce distance Da is clearly different from the normal time when the island of the lead frame 12 is floating or when bonded to resin dust. As an example, when bonding is performed on resin waste, an abnormal residual vibration is generated such that the bound distance Da increases because a cushion due to the deformation of the dust works. On the other hand, when bonding is performed in a normal state with no dust, only the ball portion 11a of the wire 11 is deformed, so the bound distance Da does not increase.

図５では、取得した動作軌跡Ｂのバウンド距離ＤａＢが、正常な動作軌跡Ａのバウンド距離ＤａＡよりも大きい。つまり、ステップＳ３では、予め把握された正常なバウンド距離ＤａＡと、取得されたバウンド距離ＤａＢとを比較し、バウンド距離ＤａＢが、製品としての半導体チップ１０に異常がないとみなせる許容範囲を超えるか否かにより、良否判定を行うことになる。   In FIG. 5, the bounce distance DaB of the acquired motion trajectory B is larger than the bounce distance DaA of the normal motion trajectory A. That is, in step S3, the normal bounce distance DaA previously grasped is compared with the acquired bounce distance DaB, and does the bounce distance DaB exceed an allowable range that the semiconductor chip 10 as a product can be regarded as having no abnormality? A pass / fail judgment is made depending on whether or not.

さらに、上記したように接合ヘッド２の残留振動は、ボンディング接合物の不具合が反映されるので、ステップＳ３の良否判定はバウンド距離Ｄａの比較に限定されない。なお、ボンディング接合物の不具合としては、ボール部１１ａの表面に傷や凹みがあること、ボール部１１ａの径が大きく違うこと、ワイヤ１１が変形していること、ボンディング部１０ａが変形して凹凸があること、リードフレーム１２が浮いていること、ヒータブロック１３の温度が異常であること、ボンディング部１０ａに付着したゴミ上にボンディングしたこと等が挙げられる。   Furthermore, as described above, the residual vibration of the bonding head 2 reflects the defect of the bonded bonding object, and therefore the pass / fail judgment in step S3 is not limited to the comparison of the bound distance Da. In addition, as a defect of the bonded product, there are scratches and dents on the surface of the ball part 11a, the diameter of the ball part 11a is greatly different, the wire 11 is deformed, the bonding part 10a is deformed and uneven. For example, the lead frame 12 is floating, the temperature of the heater block 13 is abnormal, and bonding is performed on dust adhering to the bonding portion 10a.

以下では、動作軌跡を各種距離や時間で区分し、その区分した各種距離や時間に基づいた比較により、ボンディングの良否判定を行う例を示す。図６は、動作軌跡を各種距離や時間で区分した状態を示す図である。動作軌跡は、図示のように、上記最下点Ｎ、最上点Ｍ、タッチ検出位置Ｐ、及び整定位置Ｑで規定される距離で区分され、さらに、タッチ検出された時刻ｔ０、最下点Ｎとなる時刻ｔ１、最上点Ｍとなる時刻ｔ２、及び整定位置Ｑとなる時刻ｔ３で規定される時間で区分されている。   In the following, an example is shown in which the motion trajectory is divided by various distances and times, and the bonding quality is determined by comparison based on the divided various distances and times. FIG. 6 is a diagram illustrating a state in which the motion trajectory is divided by various distances and times. As shown in the figure, the motion trajectory is divided by the distance defined by the lowest point N, the highest point M, the touch detection position P, and the settling position Q. Further, the time t0 when the touch is detected, the lowest point N The time is defined by the time t1, the time t2 that is the uppermost point M, and the time t3 that is the settling position Q.

具体的には、動作軌跡は、最下点Ｎから最上点Ｍまでの上記バウンド距離Ｄａ、タッチ検出位置Ｐから最下点Ｎまでの行き過ぎ距離Ｄｂ、タッチ検出位置Ｐから最上点Ｍまでの戻り距離Ｄｃ、タッチ検出位置Ｐから整定位置Ｑまでの押し込み距離Ｄｄ、最下点Ｎから整定位置Ｑまでの整定行き過ぎ距離Ｄｅ、及び最上点Ｍから整定位置Ｑまでの整定戻り距離Ｄｆで区分されている。これらの距離Ｄａ〜Ｄｆは、ボンディング接合物の不具合を反映する可能性が高い。このため、ステップＳ３では、取得した動作軌跡Ｂを正常な動作軌跡Ａと比較するとき、いずれの距離Ｄａ〜Ｄｆを用いても良否判定を行うことができる。   Specifically, the motion trajectory includes the bound distance Da from the lowest point N to the highest point M, the overshoot distance Db from the touch detection position P to the lowest point N, and the return from the touch detection position P to the highest point M. It is divided by the distance Dc, the push-in distance Dd from the touch detection position P to the settling position Q, the settling overshoot distance De from the lowest point N to the settling position Q, and the settling return distance Df from the highest point M to the settling position Q. Yes. These distances Da to Df have a high possibility of reflecting a defect of the bonded product. For this reason, in step S3, when comparing the acquired motion trajectory B with the normal motion trajectory A, it is possible to perform pass / fail determination using any of the distances Da to Df.

さらに、動作軌跡は、タッチ検出位置Ｐから最下点Ｎに至るまでの行き過ぎ時間Ｔａ、最下点Ｎから最上点Ｍに至るまでのバウンド時間Ｔｂ、タッチ検出位置Ｐから最上点Ｍに至るまでの戻り時間Ｔｃ、タッチ検出位置Ｐから整定位置Ｑに至るまでの整定時間Ｔｄ、最下点Ｎから整定位置Ｑに至るまでの整定行き過ぎ時間Ｔｅ、及び最上点Ｍから整定位置Ｑに至るまでの整定戻り時間Ｔｆで区分されている。これらの時間Ｔａ〜Ｔｆは、ボンディング接合物の不具合を反映する可能性が高い。このため、ステップＳ３では、取得した動作軌跡Ｂを正常な動作軌跡Ａと比較するとき、いずれの時間Ｔａ〜Ｔｆを用いても良否判定を行うことができる。   Furthermore, the motion trajectory includes an overshoot time Ta from the touch detection position P to the lowest point N, a bounce time Tb from the lowest point N to the highest point M, and from the touch detection position P to the highest point M. Return time Tc, settling time Td from touch detection position P to settling position Q, settling overshoot time Te from bottom point N to settling position Q, and from top point M to settling position Q It is divided by the settling return time Tf. These times Ta to Tf are highly likely to reflect defects in the bonded product. For this reason, in step S3, when comparing the acquired motion trajectory B with the normal motion trajectory A, it is possible to perform pass / fail determination using any time Ta to Tf.

従って、本実施形態のワイヤボンディング装置１によれば、タッチ検出後からＵＳ振動を印加する前までの、接合ヘッド２の動作軌跡を取得して良否判定を行うので、ＵＳ振動を印加してボンディングを行う前に、ボンディングで発生する異常を検出できる。また、異常を検出したら、ボンディングを中止できるので、ボンディング工程後の各種工程に不良品が流出する可能性を低減させ、その結果、製品品質の安定化や向上を図ることができる。   Therefore, according to the wire bonding apparatus 1 of this embodiment, since the operation trajectory of the bonding head 2 from the touch detection to before the US vibration is applied is acquired and the pass / fail judgment is performed, the US vibration is applied to perform bonding. Before performing, it is possible to detect abnormalities that occur in bonding. Further, since bonding can be stopped when an abnormality is detected, the possibility of defective products flowing into various processes after the bonding process is reduced, and as a result, product quality can be stabilized and improved.

また、接合ヘッド２の動作軌跡は、ボンディング接合物の不具合を反映するから、この動作軌跡に基づいてボンディングで発生する異常を検出することにより、ワイヤ１１とボンディング部１０ａとが電気的には接続していても、良品ではないような製品、即ち従来の方法では良否判定が困難とされた不良品を検出できる。   In addition, since the operation trajectory of the bonding head 2 reflects a defect in the bonded bonding object, the wire 11 and the bonding portion 10a are electrically connected by detecting an abnormality occurring in bonding based on the operation trajectory. However, it is possible to detect a product that is not a non-defective product, that is, a defective product that is difficult to determine whether it is acceptable or not by a conventional method.

さらに、ボンディング接合物の不具合によりタッチ位置が変化しても、取得された動作軌跡がボンディング接合物の不具合を反映しているので、タッチ位置を基準とした動作軌跡によって、ボンディングで発生する異常を検出できる。   In addition, even if the touch position changes due to a defect in the bonding object, the acquired movement trajectory reflects the defect in the bonding object. It can be detected.

上記実施形態では、ボンディングの良否判定について、取得した動作軌跡Ｂと正常な動作軌跡Ａとを比較する点について説明したが、これらの動作軌跡Ａ，Ｂが完全に一致している必要はなく、ある程度の許容範囲を設定することができる。一例として、許容範囲は、ボンディング工程を経た半導体チップ１０の製品品質が良好となるように、上記区分された距離Ｄａ〜Ｄｆや時間Ｔａ〜Ｔｆ、及び動作軌跡全体のパターンから適宜設定してもよい。   In the above-described embodiment, the point of comparing the acquired operation trajectory B with the normal operation trajectory A has been described for the bonding quality determination. However, it is not necessary that these operation trajectories A and B completely coincide with each other. A certain allowable range can be set. As an example, the allowable range may be set as appropriate based on the divided distances Da to Df, times Ta to Tf, and the pattern of the entire operation locus so that the product quality of the semiconductor chip 10 that has undergone the bonding process is improved. Good.

さらに、取得した動作軌跡Ｂが、上記区分された距離Ｄａ〜Ｄｆや時間Ｔａ〜Ｔｆのうちいずれかが許容範囲外であり、他の距離や時間が許容範囲内である場合でも、製品品質が良好になるように、区分された距離や時間を適宜選択し、許容範囲を設定してもよい。   Furthermore, even if the acquired motion trajectory B is out of the allowable range and any of the above divided distances Da to Df and times Ta to Tf is within the allowable range, the product quality is improved. The permissible range may be set by appropriately selecting the divided distance and time so as to be favorable.

上記実施形態では、半導体チップ１０のボンディング部１０ａにワイヤ１１を接続する場合について説明したが、これに限定されず、リードフレーム１２のリード端子にワイヤ１１を接続する場合や、半導体チップ１０同士をワイヤ１１で接続する場合等、他のワイヤボンディングにも適用できる。   In the above embodiment, the case where the wire 11 is connected to the bonding portion 10a of the semiconductor chip 10 has been described. However, the present invention is not limited to this, and the case where the wire 11 is connected to the lead terminal of the lead frame 12 or the semiconductor chips 10 are connected to each other. The present invention can also be applied to other wire bonding, such as when connecting with the wire 11.

本発明のワイヤボンディング方法では、以下の態様の採用が可能である。判定ステップ（Ｓ３）は、取得した動作軌跡（Ｂ）と予め設定された動作軌跡（Ａ）とを比較するステップを含む。この場合には、ボンディング条件を考慮した正常な動作軌跡を設定し、取得した動作軌跡が正常な動作軌跡と一致又は略一致しているか否かを比較することで、ボンディングの良否を判定できる。   The wire bonding method of the present invention can employ the following aspects. The determination step (S3) includes a step of comparing the acquired motion trajectory (B) with a preset motion trajectory (A). In this case, it is possible to determine whether the bonding is good or bad by setting a normal operation trajectory in consideration of the bonding condition and comparing whether or not the acquired operation trajectory matches or substantially matches the normal operation trajectory.

動作軌跡が、ボンディングツール（４）の残留振動によって発生する。この場合、動作軌跡は、ワイヤがボンディング部に接触してから超音波が印加されるまでの期間における、ボンディング接合物の状態を反映したものとなり、超音波を印加してボンディングを行う前に、ボンディングで発生する異常を検出できる。   An operation trajectory is generated by residual vibration of the bonding tool (4). In this case, the motion trajectory reflects the state of the bonded product in the period from when the wire contacts the bonding portion until the ultrasonic wave is applied, and before performing bonding by applying the ultrasonic wave, Abnormalities that occur during bonding can be detected.

判定ステップでは、動作軌跡においてボンディングツールの最下点（Ｎ）、最上点（Ｍ）、ボンディング部（１０ａ）に接触した位置（Ｐ）、及び、残留振動が収束する位置（Ｑ）の少なくとも２つの位置で規定される距離（Ｄａ、Ｄｂ、Ｄｃ、Ｄｄ、Ｄｅ、Ｄｆ）と、ボンディング条件とに基づいて判定する。これにより、最下点から最上点までの距離（Ｄａ）、接触した位置から最下点までの距離（Ｄｂ）、接触した位置から最上点までの距離（Ｄｃ）、接触した位置から収束する位置までの距離（Ｄｄ）、最下点から収束する位置までの距離（Ｄｅ）、最上点から収束する位置までの距離（Ｄｆ）のうち、いずれの距離を用いても、ボンディング条件を考慮した正常な距離と比較することで、ボンディングの良否を判定できる。   In the determination step, at least two of the lowest point (N), the highest point (M), the position (P) in contact with the bonding portion (10a), and the position (Q) where the residual vibration converges in the operation trajectory. The determination is based on distances (Da, Db, Dc, Dd, De, Df) defined by two positions and bonding conditions. Accordingly, the distance (Da) from the lowest point to the highest point, the distance (Db) from the contacted position to the lowest point, the distance (Dc) from the contacted position to the highest point, and the position that converges from the contacted position Normality in consideration of bonding conditions regardless of the distance (Dd), the distance (De) from the lowest point to the convergence position (De), or the distance (Df) from the highest point to the convergence position The quality of the bonding can be determined by comparing with a simple distance.

判定ステップでは、動作軌跡においてボンディングツールが最下点となる時刻（ｔ１）、最上点となる時刻（ｔ２）、ボンディング部に接触した時刻（ｔ０）、及び、残留振動が収束した時刻（ｔ３）の少なくとも２つで規定される時間（Ｔａ、Ｔｂ、Ｔｃ、Ｔｄ、Ｔｅ、Ｔｆ）と、ボンディング条件とに基づいて判定する。これにより、接触した位置から最下点に至るまでの時間（Ｔａ）、最下点から最上点に至るまでの時間（Ｔｂ）、接触した位置から最上点に至るまでの時間（Ｔｃ）、接触した位置から収束する位置に至るまでの時間（Ｔｄ）、最下点から収束する位置に至るまでの時間（Ｔｅ）、最上点から収束する位置に至るまでの時間（Ｔｆ）のうち、いずれの時間を用いても、ボンディング条件を考慮した正常な時間と比較することで、ボンディングの良否を判定できる。   In the determination step, the time (t1) at which the bonding tool becomes the lowest point in the operation locus, the time (t2) at which the bonding tool reaches the highest point, the time (t0) when the bonding tool comes into contact, and the time (t3) when the residual vibration converges These are determined based on the time (Ta, Tb, Tc, Td, Te, Tf) defined by at least two of these and the bonding conditions. Thus, the time from the contacted position to the lowest point (Ta), the time from the lowest point to the highest point (Tb), the time from the contacted position to the highest point (Tc), the contact The time (Td) from the selected position to the convergence position (Td), the time from the lowest point to the convergence position (Te), and the time from the highest point to the convergence position (Tf) Even if the time is used, the quality of the bonding can be determined by comparing with the normal time considering the bonding conditions.

ボンディングツールは、位置制御（Ｃａ）によってワイヤの一端をボンディング部に接触させた後に、位置制御から荷重制御（Ｃｂ）に移行し、設定されたボンディング荷重値でワイヤの一端をボンディング部に押圧する。この場合には、ボンディングツールは、位置制御から荷重制御に移行するとき勢いがついているので、ボンディング部からボンディング荷重値に応じた力を受けて押し返され、残留振動を生じる。   The bonding tool shifts from the position control to the load control (Cb) after bringing one end of the wire into contact with the bonding portion by the position control (Ca), and presses the one end of the wire against the bonding portion with the set bonding load value. . In this case, since the bonding tool gains momentum when shifting from the position control to the load control, the bonding tool is pushed back by receiving a force corresponding to the bonding load value from the bonding portion, thereby causing residual vibration.

以上、本発明をその好適な実施形態に基づいて説明したが、本発明のワイヤボンディング方法及びワイヤボンディング装置は、上記実施形態の構成にのみ限定されるものではなく、上記実施形態の構成から種々の修正及び変更を施したものも、本発明の範囲に含まれる。   As mentioned above, although this invention was demonstrated based on the suitable embodiment, the wire bonding method and wire bonding apparatus of this invention are not limited only to the structure of the said embodiment, Various from the structure of the said embodiment. Those modified and changed as described above are also included in the scope of the present invention.

本発明の実施形態に係るワイヤボンディング装置の概略を示す構成図。The lineblock diagram showing the outline of the wire bonding device concerning the embodiment of the present invention. ワイヤボンディング装置の一部を拡大して示す図。The figure which expands and shows a part of wire bonding apparatus. 接合ヘッドの動作軌跡を示す図。The figure which shows the operation | movement locus | trajectory of a joining head. 本発明の実施形態に係るワイヤボンディング方法の各処理を示すフローチャート。The flowchart which shows each process of the wire bonding method which concerns on embodiment of this invention. 取得した接合ヘッドの動作軌跡と予め把握された正常な動作軌跡とを比較した状態を示す図。The figure which shows the state which compared the operation | movement locus | trajectory of the acquired joining head with the normal operation | movement locus | trajectory grasped | ascertained beforehand. 動作軌跡を各種距離や時間で区分した状態を示す図。The figure which shows the state which divided the movement locus | trajectory by various distance and time.

符号の説明Explanation of symbols

１：ワイヤボンディング装置
２：接合ヘッド
３：検出器
４：ボンディングツール
１０：半導体チップ
１０ａ：ボンディング部
１１：ワイヤ
１１ａ：ボール部
１２：リードフレーム
１３：ヒータブロック
Ａ，Ｂ：動作軌跡 1: Wire bonding apparatus 2: Bonding head 3: Detector 4: Bonding tool 10: Semiconductor chip 10a: Bonding part 11: Wire 11a: Ball part 12: Lead frame 13: Heater block A, B: Operation locus

Claims (7)

超音波を印加してワイヤボンディングを行うワイヤボンディング方法であって、
ボンディングツールに支持されたワイヤの一端を、ボンディング部に接触させるステップと、
前記接触させた後の前記ボンディングツールの動作軌跡を取得するステップと、
前記取得した動作軌跡の良否を判定するステップと、
前記判定ステップで良と判定されると、超音波の印加に移行するステップと、を有することを特徴とするワイヤボンディング方法。 A wire bonding method for performing wire bonding by applying ultrasonic waves,
Contacting one end of the wire supported by the bonding tool with the bonding part;
Obtaining an operation trajectory of the bonding tool after the contact;
Determining the quality of the acquired motion trajectory;
And a step of transitioning to application of ultrasonic waves when it is determined to be good in the determination step. 前記判定ステップは、前記取得した動作軌跡と予め設定された動作軌跡とを比較するステップを含む、請求項１に記載のワイヤボンディング方法。   The wire bonding method according to claim 1, wherein the determining step includes a step of comparing the acquired motion trajectory with a preset motion trajectory. 前記動作軌跡が、前記ボンディングツールの残留振動によって発生する、請求項１に記載のワイヤボンディング方法。   The wire bonding method according to claim 1, wherein the movement locus is generated by residual vibration of the bonding tool. 前記判定ステップでは、前記動作軌跡において前記ボンディングツールの最下点、最上点、前記ボンディング部に接触した位置、及び、前記残留振動が収束する位置の少なくとも２つの位置で規定される距離と、ボンディング条件とに基づいて判定する、請求項３に記載のワイヤボンディング方法。   In the determination step, a distance defined by at least two positions of the operation locus, the lowest point of the bonding tool, the highest point, a position in contact with the bonding portion, and a position at which the residual vibration converges, and bonding The wire bonding method according to claim 3, wherein the determination is based on conditions. 前記判定ステップでは、前記動作軌跡において前記ボンディングツールが最下点となる時刻、最上点となる時刻、前記ボンディング部に接触した時刻、及び、前記残留振動が収束した時刻の少なくとも２つで規定される時間と、ボンディング条件とに基づいて判定する、請求項３に記載のワイヤボンディング方法。   The determination step is defined by at least two of a time when the bonding tool is the lowest point, a time when the bonding tool is the highest point, a time when the bonding tool is contacted, and a time when the residual vibration is converged. The wire bonding method according to claim 3, wherein the determination is made based on a measurement time and bonding conditions. 前記ボンディングツールは、位置制御によって前記ワイヤの一端を前記ボンディング部に接触させた後に、前記位置制御から荷重制御に移行し、設定されたボンディング荷重値で前記ワイヤの一端を前記ボンディング部に押圧する、請求項１〜５の何れか一に記載のワイヤボンディング方法。   The bonding tool shifts from the position control to load control after bringing one end of the wire into contact with the bonding portion by position control, and presses the one end of the wire to the bonding portion with a set bonding load value. The wire bonding method according to any one of claims 1 to 5. 超音波を印加してワイヤボンディングを行うワイヤボンディング装置であって、
ワイヤの一端をボンディング部に接触させるボンディングツールと、
前記ワイヤが前記ボンディング部に接触した後の前記ボンディングツールの動作軌跡を計測する軌跡計測部と、
前記軌跡計測部が取得した動作軌跡の良否を判定する判定部とを備え、
前記判定部での判定結果が良であると、超音波を印加してボンディングを行うことを特徴とするワイヤボンディング装置。 A wire bonding apparatus for applying an ultrasonic wave to perform wire bonding,
A bonding tool for bringing one end of the wire into contact with the bonding portion;
A trajectory measurement unit that measures an operation trajectory of the bonding tool after the wire contacts the bonding unit;
A determination unit that determines the quality of the motion trajectory acquired by the trajectory measurement unit,
A wire bonding apparatus that performs bonding by applying an ultrasonic wave when the determination result by the determination unit is good.
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Publication number Priority date Publication date Assignee Title
KR101411937B1 (en) 2013-08-19 2014-06-26 (주)피엔티 Method for examining quality of metal wire bonding in real time
JP2018137280A (en) * 2017-02-20 2018-08-30 日亜化学工業株式会社 Manufacturing method of light-emitting device
CN114256106A (en) * 2021-12-13 2022-03-29 盐城矽润半导体有限公司 Semiconductor mounting equipment

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Publication number Priority date Publication date Assignee Title
JPS61231725A (en) * 1985-04-08 1986-10-16 Toshiba Corp Wire bonding apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231725A (en) * 1985-04-08 1986-10-16 Toshiba Corp Wire bonding apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101411937B1 (en) 2013-08-19 2014-06-26 (주)피엔티 Method for examining quality of metal wire bonding in real time
JP2018137280A (en) * 2017-02-20 2018-08-30 日亜化学工業株式会社 Manufacturing method of light-emitting device
CN114256106A (en) * 2021-12-13 2022-03-29 盐城矽润半导体有限公司 Semiconductor mounting equipment
CN114256106B (en) * 2021-12-13 2022-09-13 盐城矽润半导体有限公司 Semiconductor mounting equipment

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