JP2009088526A - 有機発光素子 - Google Patents
有機発光素子 Download PDFInfo
- Publication number
- JP2009088526A JP2009088526A JP2008249205A JP2008249205A JP2009088526A JP 2009088526 A JP2009088526 A JP 2009088526A JP 2008249205 A JP2008249205 A JP 2008249205A JP 2008249205 A JP2008249205 A JP 2008249205A JP 2009088526 A JP2009088526 A JP 2009088526A
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- JP
- Japan
- Prior art keywords
- light emitting
- layer
- internal potential
- organic light
- respect
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- 238000009826 distribution Methods 0.000 claims abstract description 53
- 238000002347 injection Methods 0.000 claims description 44
- 239000007924 injection Substances 0.000 claims description 44
- 230000005525 hole transport Effects 0.000 claims description 24
- 239000010410 layer Substances 0.000 description 97
- 239000010408 film Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000001093 holography Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- -1 MoW Chemical class 0.000 description 1
- 229910016048 MoW Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】有機発光素子Lは、陽極180と、陰極200および陽極と陰極との間に配置された発光層を含む有機多層190を含む。前記有機多層に対する内部電位分布のプロファイルは非線形で構成される。
【選択図】図3
Description
一方、本実施形態で有機多層190の内部電位値は、相対値基準に1.1eV以内となる。この時、有機多層190の各層は、内部電位値を適正範囲に維持するが、例えば、正孔注入層(HIL)1902は相対値0.3eV以内に、電子輸送層(ETL)1908も相対値0.3eV以内に内部電位分布差を維持できる。
180 陽極
190 有機多層
200 陰極
1902 正孔注入層
1904 正孔輸送層
1906 発光層
1908 電子輸送層
1910 電子注入層
Claims (16)
- 陽極と、
陰極と、
前記陽極と前記陰極との間に配置された有機多層と、を含み、
前記有機多層に対する内部電位分布のプロファイルが非線形で形成されたことを特徴とする有機発光素子。 - 前記プロファイルが波形で形成されたことを特徴とする請求項1に記載の有機発光素子。
- 前記プロファイルが正の傾きを有して形成された区間と負の傾きを有して形成された区間を含むことを特徴とする請求項1に記載の有機発光素子。
- 前記有機多層は前記陽極に接する正孔注入層を含み、前記正孔注入層に対する内部電位の分布が負の傾きに形成されることを特徴とする請求項1に記載の有機発光素子。
- 前記有機多層は前記正孔注入層に接する正孔輸送層を含み、前記正孔輸送層に対する内部電位の分布が平坦に形成されたことを特徴とする請求項4に記載の有機発光素子。
- 前記有機多層は前記正孔輸送層に接する発光層を含み、前記発光層に対する内部電位の分布が正の傾きと負の傾きに形成されることを特徴とする請求項5に記載の有機発光素子。
- 前記有機多層は前記発光層に接する電子輸送層を含み、前記電子輸送層に対する内部電位の分布が正の傾きに形成されることを特徴とする請求項6に記載の有機発光素子。
- 前記有機多層は前記電子輸送層に接する電子注入層を含み、前記電子注入層に対する内部電位の分布が正の傾きに形成されることを特徴とする請求項7に記載の有機発光素子。
- 前記有機多層は前記陽極に順次に接する正孔注入層および正孔輸送層を含み、前記正孔注入層に対する内部電位の分布が負の傾きに形成され、前記正孔輸送層に対する内部電位の分布が平坦に形成されたことを特徴とする請求項1に記載の有機発光素子。
- 前記有機多層は前記陽極に順次に接する正孔注入層、正孔輸送層および発光層を含み、前記正孔注入層に対する内部電位の分布が負の傾きに形成され、前記正孔輸送層に対する内部電位の分布が平坦に形成され、前記発光層に対する内部電位の分布が正の傾きと負の傾きに形成されることを特徴とする請求項1に記載の有機発光素子。
- 前記有機多層は前記陽極に順次に接する正孔注入層、正孔輸送層、発光層および電子輸送層を含み、前記正孔注入層に対する内部電位の分布が負の傾きに形成され、前記正孔輸送層に対する内部電位の分布が平坦に形成され、前記発光層に対する内部電位の分布が正の傾きと負の傾きに形成され、前記電子輸送層に対する内部電位の分布が正の傾きに形成されることを特徴とする請求項1に記載の有機発光素子。
- 前記有機多層は前記陽極に順次に接する正孔注入層、正孔輸送層、発光層、電子輸送層および電子注入層を含み、前記正孔注入層に対する内部電位の分布が負の傾きに形成され、前記正孔輸送層に対する内部電位の分布が平坦に形成され、前記発光層に対する内部電位の分布が正の傾きと負の傾きに形成され、前記電子輸送層に対する内部電位の分布が正の傾きに形成され、前記電子注入層に対する内部電位の分布が正の傾きに形成されることを特徴とする請求項1に記載の有機発光素子。
- 前記有機多層に対する内部電位値が相対値1.1eV以内に分布されたことを特徴とする請求項1に記載の有機発光素子。
- 前記正孔注入層に対する内部電位値が相対値0.3eV以内に分布されたことを特徴とする請求項12に記載の有機発光素子。
- 前記電子輸送層に対する内部電位値が相対値0.3eV以内に分布されたことを特徴とする請求項12に記載の有機発光素子。
- 請求項1による有機発光素子を含むことを特徴とする有機発光表示装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070097913A KR100884536B1 (ko) | 2007-09-28 | 2007-09-28 | 유기 발광 소자 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009088526A true JP2009088526A (ja) | 2009-04-23 |
Family
ID=40140029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008249205A Pending JP2009088526A (ja) | 2007-09-28 | 2008-09-26 | 有機発光素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8174184B2 (ja) |
EP (1) | EP2043175B1 (ja) |
JP (1) | JP2009088526A (ja) |
KR (1) | KR100884536B1 (ja) |
CN (1) | CN101399318B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2151876A1 (en) * | 2008-08-05 | 2010-02-10 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Electric transport component, method of manufacturing the same, as well as electro-optical device and opto-electrical device. |
JP5680056B2 (ja) * | 2009-04-02 | 2015-03-04 | コーニンクレッカ フィリップス エヌ ヴェ | パターン化有機発光ダイオード、及びその製造方法 |
KR102014168B1 (ko) | 2012-10-12 | 2019-08-27 | 삼성디스플레이 주식회사 | 유기 발광 소자, 이의 제조 방법 및 물질층 형성 방법 |
CN105702875B (zh) * | 2014-12-11 | 2018-04-27 | 财团法人工业技术研究院 | 发光元件、电极结构与其制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200160821Y1 (ko) | 1996-07-20 | 1999-11-15 | 주재수 | 의자 등받이 |
KR20010060821A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 유기전계발광표시소자의 구조 |
US7196366B2 (en) * | 2004-08-05 | 2007-03-27 | The Trustees Of Princeton University | Stacked organic photosensitive devices |
US7375370B2 (en) * | 2004-08-05 | 2008-05-20 | The Trustees Of Princeton University | Stacked organic photosensitive devices |
US8592680B2 (en) * | 2004-08-11 | 2013-11-26 | The Trustees Of Princeton University | Organic photosensitive devices |
KR20060091648A (ko) * | 2005-02-16 | 2006-08-21 | 삼성에스디아이 주식회사 | 다층 캐소드를 포함하는 유기 발광 소자 |
KR100787428B1 (ko) * | 2005-03-05 | 2007-12-26 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 |
TWI299636B (en) * | 2005-12-01 | 2008-08-01 | Au Optronics Corp | Organic light emitting diode |
JP2007214228A (ja) * | 2006-02-08 | 2007-08-23 | Sony Corp | 有機電界発光素子 |
-
2007
- 2007-09-28 KR KR1020070097913A patent/KR100884536B1/ko active IP Right Grant
-
2008
- 2008-09-26 US US12/238,915 patent/US8174184B2/en active Active
- 2008-09-26 JP JP2008249205A patent/JP2009088526A/ja active Pending
- 2008-09-28 CN CN2008101671277A patent/CN101399318B/zh active Active
- 2008-09-29 EP EP08253170.8A patent/EP2043175B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101399318A (zh) | 2009-04-01 |
KR100884536B1 (ko) | 2009-02-18 |
US8174184B2 (en) | 2012-05-08 |
EP2043175A2 (en) | 2009-04-01 |
US20090085475A1 (en) | 2009-04-02 |
EP2043175B1 (en) | 2017-03-08 |
CN101399318B (zh) | 2011-04-13 |
EP2043175A3 (en) | 2011-08-24 |
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