JP2009088288A5 - - Google Patents

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Publication number
JP2009088288A5
JP2009088288A5 JP2007256704A JP2007256704A JP2009088288A5 JP 2009088288 A5 JP2009088288 A5 JP 2009088288A5 JP 2007256704 A JP2007256704 A JP 2007256704A JP 2007256704 A JP2007256704 A JP 2007256704A JP 2009088288 A5 JP2009088288 A5 JP 2009088288A5
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Japan
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JP2007256704A
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Japanese (ja)
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JP2009088288A (ja
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Publication of JP2009088288A5 publication Critical patent/JP2009088288A5/ja
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JP2007256704A 2007-09-28 2007-09-28 電荷転送素子および固体撮像素子並びに撮像装置 Withdrawn JP2009088288A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007256704A JP2009088288A (ja) 2007-09-28 2007-09-28 電荷転送素子および固体撮像素子並びに撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007256704A JP2009088288A (ja) 2007-09-28 2007-09-28 電荷転送素子および固体撮像素子並びに撮像装置

Publications (2)

Publication Number Publication Date
JP2009088288A JP2009088288A (ja) 2009-04-23
JP2009088288A5 true JP2009088288A5 (enExample) 2010-12-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007256704A Withdrawn JP2009088288A (ja) 2007-09-28 2007-09-28 電荷転送素子および固体撮像素子並びに撮像装置

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JP (1) JP2009088288A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312380B2 (en) * 2014-03-19 2016-04-12 Macronix International Co., Ltd. Semiconductor device having deep implantation region and method of fabricating same

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