JP2009087990A - Apparatus and method for forming epitaxial growth film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an epitaxial growth film formation apparatus which can mitigate a possibility of breakage of a susceptor, wafer and other peripheral parts by preventing the susceptor together with the wafer even if a sticking phenomenon of the wafer with the susceptor occurs when removing the wafer on a horizontal disc-like susceptor. <P>SOLUTION: The epitaxial vapor growth film formation apparatus is provided with a horizontal disc-like susceptor 5 to house a wafer W wherein a vapor growth film is formed and a rotary cylinder 6 to hold and rotate the susceptor 5, wherein a plurality of projections 5b provided around the periphery of the susceptor 5 are engaged with a plurality of key-shaped projections 6a provided on the upper side of the rotary cylinder 6. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an epitaxial growth film forming apparatus and an epitaxial growth film forming method, and in particular, when replacing a wafer on which a film is to be formed, the susceptor that accommodates the wafer can be held so as not to be lifted from a rotating drum. Regarding the mechanism.

  One type of epitaxial growth film forming apparatus is a single wafer type apparatus. In this apparatus, a wafer is placed on a horizontal disk type susceptor arranged in a horizontal heating furnace, and the wafer gas is circulated in the horizontal direction in the furnace while rotating the wafer around the vertical axis. An epitaxial film is formed on the upper surface, and it is frequently used as the diameter of the wafer increases, and is also regarded as the mainstream in 300 mm wafer compatible devices. In the single-wafer epitaxial growth film forming apparatus, a circular recess for accommodating a wafer is provided on the upper surface of the susceptor for the purpose of bringing the source gas into contact only with the upper surface of the wafer that requires epitaxial growth. The wafer is accommodated in the concave portion of the susceptor, and the film formation productivity is improved by mechanically replacing the wafer after the film formation process on the wafer.

  By the way, in the process of forming an epitaxial growth film, the thickness of the epitaxial growth film is large and often reaches about 100 μm. In such a thick film formation, although the wafer on the susceptor is housed in the recess, a sticking portion due to the growth film straddling between the inner peripheral surface of the susceptor and the outer peripheral surface of the wafer occurs. Cheap. In the epitaxial growth film forming apparatus as described above, a mechanism is generally used in which a wafer is pushed up from below after the film formation process and is removed from the susceptor. This wafer removal mechanism is disclosed in Patent Document 1 and Patent Document 2. In the techniques disclosed in Patent Literature 1 and Patent Literature 2, both have a mechanism for pushing up the wafer from the lower side of the horizontal disk susceptor, thereby improving the workability of removing the film-formed wafer.

JP 2001-274094 A JP 2002-47571 A

  However, when the wafer is removed by the wafer removal mechanism disclosed in Patent Document 1 and Patent Document 2, the peripheral edge of the wafer and the inner periphery of the susceptor are stuck together, so that the susceptor is lifted together with the wafer. As a result, there is a problem that the film on the wafer, the wafer, the susceptor and other peripheral parts may be damaged.

  The present invention has been made in view of the above problems, and when removing a wafer on a horizontal disk type susceptor, the susceptor is not lifted together with the wafer even if the wafer and the susceptor are stuck. Accordingly, an object of the present invention is to provide an epitaxial growth film forming apparatus that reduces the fear that the wafer, the susceptor and other peripheral parts are damaged.

  In order to solve the above problems and achieve the object, an epitaxial growth film forming apparatus according to the present invention is configured as follows.

  (1) An epitaxial growth film forming apparatus according to the present invention is provided with a horizontal disk type susceptor that accommodates a wafer on which a vapor phase growth film is formed, and a rotating drum that holds and rotates the susceptor. Has a configuration in which a plurality of protrusions provided on a peripheral portion of the susceptor and a plurality of key-type protrusions provided on an upper portion of the rotating drum are engaged with each other.

  (2) In the epitaxial growth film forming apparatus according to the above (1), the number of the plurality of protrusions provided on the peripheral portion of the susceptor and the number of the key-type protrusions provided on the upper portion of the rotating drum are the same. It is characterized by that.

  (3) In the epitaxial growth film forming apparatus according to (1), two or more sets of the plurality of protrusions provided on the peripheral portion of the susceptor and the plurality of key-type protrusions provided on the upper portion of the rotating drum are provided. It is characterized by being.

  (4) In the epitaxial growth film forming apparatus according to (1), the plurality of protrusions provided on the peripheral portion of the susceptor and the plurality of key-type protrusions provided on an upper portion of the rotating cylinder are configured to rotate the rotation. It is characterized by being arranged substantially equiangularly with respect to the center of rotation of the barrel.

  (5) The method for forming an epitaxial growth film in the epitaxial growth film forming apparatus according to any one of (1) to (4), wherein a vapor phase growth film is formed.

  When removing a film-formed wafer on a horizontal disk type susceptor, the wafer, susceptor, and other peripheral parts can be removed by preventing the susceptor from lifting together with the wafer even if the wafer and susceptor are stuck. It has the effect of reducing fear of breakage.

  Embodiments of an epitaxially grown film forming apparatus and an epitaxially grown film forming method according to the present invention will be described below with reference to the accompanying drawings.

  Hereinafter, the epitaxial growth film forming apparatus according to the present embodiment will be described in detail. FIG. 1 is a cross-sectional view of an epitaxial growth film forming apparatus according to this embodiment. The film forming apparatus 1 is an apparatus for forming a vapor growth film on a wafer W, and includes a chamber 2, a gas supply pipe 3, a rectifying plate 4, a susceptor 5, a rotating drum 6, and a gas exhaust pipe 7. , A heater 8, a wafer W, and a wafer push-up bar 9.

The gas supply pipe 3 is disposed at an upper portion in the chamber 2 and at a substantially central portion in the horizontal direction, and the chamber 2 is controlled to supply an external gas so that gas (source gas or carrier gas) is supplied into the chamber 2. It is connected to a device (not shown). From a gas supply control device (not shown), a source gas (for example, SiHCl _{3 in} the case of a thick film) or a carrier gas (for example, H ₂ ) depending on the type of thin film formed in the film forming device 1. ) Etc. are supplied in the direction A in FIG.

  The gas exhaust pipe 7 is arranged at two locations in the lower part of the chamber 2, divided into right and left in FIG. 1, so that the gas after being used for vapor phase growth inside the chamber 2 is discharged to the outside of the chamber 2. The chamber 2 is connected to an external gas exhaust control device (not shown). And by connecting with the gas exhaust control apparatus (illustration omitted), the gas discharged | emitted by the B direction of FIG. 1 is discarded as exhaust gas.

  Further, the chamber 2 includes a rectifying plate 4, a susceptor 5, a rotating drum 6, and a heater 8 therein.

  The rectifying plate 4 adjusts the flow rate of the raw material gas flowing in from the gas supply pipe 3 and is formed of quartz, stainless steel or the like, and is formed on the side surface in the chamber 2 in the space between the gas supply pipe 3 and the susceptor 5. It is fixed. In addition, a large number of openings are provided over the entire area facing the wafer W, and the opening area is adjusted so that the gas flow velocity is uniform over the entire area above the wafer W.

  The rotating drum 6 is a rotating body that rotates the susceptor 5 and has a drive function of rotating at a constant rotation speed in the direction C of FIG. 1 so that a thin film on the wafer W is uniformly generated. The rotation speed is preferably rotated at a speed of 500 rpm or more in order to efficiently form a film with high film uniformity by using the film forming apparatus according to this embodiment.

  The heater 8 is a heater that heats the wafer W fixed on the susceptor 5 to a predetermined temperature (for example, about 1100 ° C.) from the back side, and is supplied from a heating circuit (not shown) provided outside the chamber 2. It is heated to a predetermined temperature with a constant current. Moreover, it has a some opening part so that the wafer pushing-up stick | rod 9 may move to an up-down direction.

  The susceptor 5 supports the wafer W on which a thin film is formed by vapor phase growth, and has a function of fixing the wafer W at a predetermined position. Further, the rotator 6 supports the susceptor 5. The susceptor 5 is provided with a recess 5a, and the wafer W is held in accordance with the position of the recess 5a. Further, since the susceptor 5 holds the wafer W, it is generally called a holder.

  The wafer push-up rod 9 is for removing the wafer W from the susceptor 5 by pushing up the wafer W when exchanging the wafer W. The wafer push-up rod drive mechanism (not shown) provided outside the chamber 2 is used to remove the wafer push-up rod 9 shown in FIG. It is driven in the vertical direction.

  The holding mechanism for the susceptor 5 and the rotating drum 6 prevents the susceptor 5 from lifting when the wafer W is removed. If the susceptor 5 is fixed with screws, pins, etc., the wafer W is heated to about 1100 ° C., so that the thermal expansion of the peripheral parts of the wafer W is severe, and there is a problem that breakage or failure is likely to occur. Therefore, the present embodiment is required to satisfy both the fact that the susceptor 5 does not move when the wafer W is exchanged and that peripheral components are not damaged or failed due to thermal expansion.

  Hereinafter, the holding mechanism for the susceptor 5 and the rotary drum 6 will be described in detail with reference to enlarged views. 2 is a top view in the DD direction of FIG. 1 showing a holding state of the susceptor 5 and the rotating drum 6 according to the present embodiment. FIG. 2 is a view of the holding state of the susceptor 5 and the rotary drum 6 of FIG. 1 as viewed from the top in the DD direction. In FIG. 2, the susceptor projections 5 b and the rotary drum key type projections 6 a are the same number, and a configuration is shown in which three locations are provided approximately equiangularly with respect to the center position of the rotary drum 6.

  The susceptor projection 5b and the rotary drum key projection 6a require at least two sets for the purpose of the present invention. About these upper limits, if the number increases too much, workability when the susceptor 5 is held on the rotating drum 6 is lowered. Therefore, in consideration of workability of the susceptor 5 and the rotating drum 6, it is necessary to examine the number and arrangement positions of the susceptor projections 5b and the rotation drum key type projections 6a. Is not to be done.

  Further, FIG. 3 is a side view of the state before the susceptor 5 according to the present embodiment is held by the rotating drum 6 as seen in the direction EE of FIG. In FIG. 3, the susceptor 5 is pushed down in the F direction, and the protrusion 5 b of the susceptor 5 is placed on the upper portion of the rotating drum 6. Then, the susceptor 5 is rotated, and the susceptor projection 5 b is engaged with the rotary drum key type projection 6 a of the rotary drum 6.

  As a result of rotating the susceptor 5, the susceptor protrusion 5b engages with the rotary drum key protrusion 6a, as shown in FIG. FIG. 4 is a side view of the state in which the susceptor 5 according to the present embodiment is held by the rotary drum 6 as viewed in the direction EE of FIG. As shown in FIG. 4, in a state where the susceptor protrusion 5b is held by the rotary drum key protrusion 6a, the susceptor 5 is lifted together with the wafer W even if the wafer push-up bar 9 pushes up the wafer W during wafer replacement. In this way, the fear that the wafer, the susceptor and other peripheral parts are damaged can be reduced.

  The height Db of the susceptor projection 5b is lower than the bottom height Da of the rotary drum key projection 6a to be engaged, and is held by rotation, so that there is a slight dimensional margin. The structure which has is preferable. However, if the dimensional allowance is too large, the susceptor 5 is lifted by the height of the dimensional allowance when the wafer push-up rod 9 pushes up the wafer W, and the susceptor 5 falls when the wafer W is removed. Therefore, the susceptor 5 and peripheral parts are damaged. Therefore, the numerical relationship between the height Da and the height Db needs to be optimized in consideration of workability when holding the susceptor 5 on the rotating drum 6 and workability when removing the wafer W.

  Further, the shape of the rotary drum key-shaped protrusion 6a shows a shape protruding from the upper portion of the rotary drum 6 in FIG. 4, but FIG. 5 shows a concave shape provided on the upper end surface of the rotary drum 6. Yes. FIG. 5 is a side view seen in the EE direction of FIG. 2 showing a modification of the state in which the susceptor 5 according to the present embodiment is held by the rotary drum 6. As shown in FIG. 5, when the surface of the susceptor 5 and the end surface of the rotating drum 6 are substantially the same height while the susceptor protruding portion 5b is held by the rotating drum key-shaped protruding portion 6a, the wafer W is loaded and unloaded. Sometimes it is possible to configure so that the peripheral parts are less damaged.

  Furthermore, as a configuration in which the susceptor 5 is mounted on the rotary drum 6, the configuration shown in FIG. FIG. 6 is a top view in the DD direction of FIG. 1 showing a modified example of the holding state of the susceptor 5 and the rotating drum 6 according to the present embodiment. 6 shows a state in which the susceptor 5 is held by the rotating drum 6 as in FIG. 2, but the rotating drum 6 has a diameter that is slightly larger than that of the susceptor 5.

  It should be noted that the protrusions on the periphery of the susceptor 5 and the key-shaped protrusions on the upper portion of the rotary cylinder 6 are engaged as described above so that the susceptor 5 moves integrally with the wafer W when the wafer W is removed. In other words, a configuration for preventing the trouble of damaging the wafer W, the susceptor 5 and other peripheral components is shown, and the configuration is not limited to the configuration shown in the present embodiment.

  Hereinafter, the film formation procedure of the epitaxial growth film forming apparatus according to the present embodiment will be described in detail. FIG. 7 is a flowchart showing a film forming procedure of the epitaxial growth film forming apparatus according to the present embodiment. The film formation procedure will be described with reference to FIG.

  First, the susceptor 5 containing the wafer W is held on the rotating drum 6 (step S100). The rotating drum 6 is rotated at a high speed (step S101). A vapor phase growth film is formed on the wafer W (step S102). The wafer W is removed from the susceptor 5 (step S103). When forming a vapor phase growth film on another wafer (step S104: Yes), the next wafer is set on the susceptor 5 (step S105). Next, the process returns to step S101. On the other hand, when the vapor phase growth film is not formed on another wafer (step S104: No), the film formation is finished.

  As described above, according to the epitaxial growth film forming apparatus according to the present embodiment, the structure in which the susceptor 5 is engaged with the rotating drum 6 enables the wafer W on which the vapor growth film is formed to be replaced. Epitaxial growth film formation that prevents the susceptor 5 containing the wafer W from being lifted even when pushed up from the bottom, and reduces the risk of damage to the wafer W, the susceptor 5 and other peripheral parts due to thermal expansion during the formation of the vapor phase growth film Provide a method.

It is sectional drawing of the epitaxial growth film | membrane forming apparatus concerning this Embodiment. FIG. 4 is a top view in the DD direction of FIG. 1 showing a holding state of the susceptor 5 and the rotating drum 6 according to the present embodiment. It is the side view which looked at the state before hold | maintaining the susceptor 5 concerning this Embodiment to the rotating drum 6 in the EE direction of FIG. It is the side view which looked at the state which hold | maintained the susceptor 5 concerning this Embodiment to the rotating drum 6 in the EE direction of FIG. It is the side view seen in the EE direction of FIG. 2 which shows the modification of the state which hold | maintained the susceptor 5 concerning this Embodiment to the rotating drum 6. FIG. It is a DD direction top view of Drawing 1 showing the modification of the maintenance state of susceptor 5 and rotating drum 6 concerning this embodiment. It is a flowchart which shows the film formation procedure of the epitaxial growth film | membrane forming apparatus concerning this Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Film forming apparatus 2 Chamber 3 Gas supply pipe 4 Rectification plate 5 Susceptor 5a Susceptor recessed part 5b Susceptor protrusion part 6 Rotating drum 6a Rotating drum key type protrusion part 7 Gas exhaust pipe 8 Heater 9 Wafer push-up rod W Wafer A Gas supply direction B Gas Exhaust direction C Rotating drum rotating direction Da Bottom height Db of rotating drum key-shaped protrusion 6a Height DD of susceptor protruding portion 5b Direction of susceptor 5 and holding state of rotating drum 6 EE Susceptor 5 Direction F for viewing the holding state of the rotary cylinder 6 from the side F Direction of pushing down the susceptor 5 before holding the susceptor 5 on the rotary cylinder 6 Direction of rotation of the susceptor 5 before holding the susceptor 5 on the rotary cylinder 6

Claims (5)

A horizontal disk-type susceptor that accommodates a wafer for forming a vapor phase growth film, and a rotating drum that holds and rotates the susceptor,
An epitaxial growth film forming apparatus comprising: a plurality of protrusions provided on a peripheral edge of the susceptor; and a plurality of key-type protrusions provided on an upper portion of the rotating drum.   2. The epitaxial growth film forming apparatus according to claim 1, wherein the number of the plurality of protrusions provided on the peripheral portion of the susceptor is the same as the number of the plurality of key-type protrusions provided on the upper portion of the rotating drum.   2. The epitaxial growth film formation according to claim 1, wherein two or more pairs of the plurality of protrusions provided on a peripheral portion of the susceptor and the plurality of key-type protrusions provided on an upper portion of the rotating drum are formed. apparatus.   The plurality of protrusions provided on the peripheral edge of the susceptor and the plurality of key-type protrusions provided on the upper portion of the rotating drum are arranged substantially equiangularly with respect to the rotation center of the rotating drum. The epitaxial growth film forming apparatus according to claim 1, wherein:   5. The epitaxial growth film forming apparatus according to claim 1, wherein a vapor phase growth film is formed.

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