JP2009081303A - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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JP2009081303A
JP2009081303A JP2007250021A JP2007250021A JP2009081303A JP 2009081303 A JP2009081303 A JP 2009081303A JP 2007250021 A JP2007250021 A JP 2007250021A JP 2007250021 A JP2007250021 A JP 2007250021A JP 2009081303 A JP2009081303 A JP 2009081303A
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frame
sealing member
semiconductor element
semiconductor device
cap
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Yutaka Matsuzawa
豊 松澤
Masunori Takamori
益教 高森
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a constitution that a semiconductor element is disposed in a hollow sealing member, which can effectively prevent the detachment of a sealing member on the bonding face at mounting, also prevent the occurrence of dew condensation in a hollow space, and ensure long term reliability after mounting. <P>SOLUTION: The semiconductor device comprises a semiconductor element 1, a lead frame 2 to which the semiconductor element 1 is mounted, and a sealing member 3 for sealing the semiconductor element 1. The sealing member 3 has a hollow frame body 5 having one end opened, and a cap 6 for closing the opening of the frame body 5. The semiconductor element 1 is housed in the sealing member 3, the lead frame 2 is led to the outside of the sealing member 3, and a vent groove 7 is formed at the edge of the frame 5 at the open side passing therethrough. The groove 7 is sealed with a sealing plug 11 after the lead frame 2 is fixed to a mounting substrate 14. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体素子を中空の封止部材内に配置した構成の半導体装置およびその製造方法に関する。   The present invention relates to a semiconductor device having a configuration in which a semiconductor element is disposed in a hollow sealing member and a method for manufacturing the same.

従来の半導体装置には、セラミックパッケージ内に半導体素子を収容し、その内部に窒素ガスやドライエア等を充満させて気密封止した構造を採用したものがある。このようなセラミックパッケージを使用した半導体装置は、実装用基板への半田付け時に、半田リフローによる熱が加わっても内部はあまり膨張せず、結露もしないという利点がある。しかしながら、セラミックパッケージは高価であり、半導体装置を安価に製造することが難しい。   Some conventional semiconductor devices employ a structure in which a semiconductor element is accommodated in a ceramic package and is hermetically sealed by being filled with nitrogen gas, dry air, or the like. A semiconductor device using such a ceramic package has an advantage that the inside does not expand so much and no condensation occurs even when heat is applied by solder reflow during soldering to a mounting substrate. However, the ceramic package is expensive, and it is difficult to manufacture a semiconductor device at low cost.

そこで、近年の半導体装置では、例えば、図１４および図１５に示すような構造が使用されている。なお、図１４は、従来の半導体装置を示す平面図であり、図１５は、図１４のＦ−Ｆ線に沿う断面図である。この従来の半導体装置は、半導体素子１と、リードフレーム２と、封止部材３とを備える。封止部材３は、合成樹脂からなり、リードフレーム２の下部に位置する基台４と、リードフレーム２の上部に位置する上端が開口した中空の枠体５と、この枠体５の開口側を閉鎖するキャップ６とを有する。そして、基台４と枠体５とは、例えば、リードフレーム２に直接にモールド成形され、また、キャップ６は、枠体５の開口側に接着剤８で固定されている。なお、半導体素子１がＣＣＤ（Charge Coupled Device）やフォトダイオードなどの光半導体素子である場合には、キャップ６としてガラス板や合成樹脂板等の光透過性材料が使用される。   Therefore, in recent semiconductor devices, for example, a structure as shown in FIGS. 14 and 15 is used. FIG. 14 is a plan view showing a conventional semiconductor device, and FIG. 15 is a cross-sectional view taken along line FF in FIG. This conventional semiconductor device includes a semiconductor element 1, a lead frame 2, and a sealing member 3. The sealing member 3 is made of a synthetic resin, and includes a base 4 positioned at the lower part of the lead frame 2, a hollow frame 5 having an upper end opened at the upper part of the lead frame 2, and an opening side of the frame 5 And a cap 6 for closing. The base 4 and the frame 5 are, for example, directly molded on the lead frame 2, and the cap 6 is fixed to the opening side of the frame 5 with an adhesive 8. When the semiconductor element 1 is an optical semiconductor element such as a CCD (Charge Coupled Device) or a photodiode, a light transmissive material such as a glass plate or a synthetic resin plate is used as the cap 6.

一方、リードフレーム２は、ダイパッド２１と複数本のアウターリード２２とダム樹脂２３とを備える。封止部材３の中空内に位置するリードフレーム２のダイパッド２１上に上記の半導体素子１が銀ペーストなどの接着剤によって固定されている。半導体素子１の外部引出用の図示しない各電極は、金等によるボンディングワイヤ２５を介してそれぞれ対応するアウターリード２２の内端部に電気的に接続されている。また、各アウターリード２２の外端部は封止部材３の外部に引き出されて、プリント配線基板などの実装用基板１４に半田１５で固定される。   On the other hand, the lead frame 2 includes a die pad 21, a plurality of outer leads 22, and a dam resin 23. The semiconductor element 1 is fixed on the die pad 21 of the lead frame 2 located in the hollow of the sealing member 3 with an adhesive such as silver paste. Each electrode (not shown) for external extraction of the semiconductor element 1 is electrically connected to the inner end of the corresponding outer lead 22 via a bonding wire 25 made of gold or the like. Further, the outer end portion of each outer lead 22 is pulled out of the sealing member 3 and fixed to a mounting substrate 14 such as a printed wiring board with solder 15.

図１４および図１５に示した従来の半導体装置は、封止部材３が合成樹脂からなるため、安価に製造できるという利点がある。しかしながら、封止部材３の中空内を予め密閉状態とし、その後、アウターリード２２の外端部を実装用基板１４に半田１５で固定しているため、下記のような問題点を生じている。   The conventional semiconductor device shown in FIGS. 14 and 15 has an advantage that it can be manufactured at low cost because the sealing member 3 is made of synthetic resin. However, since the inside of the hollow of the sealing member 3 is sealed in advance, and then the outer end portion of the outer lead 22 is fixed to the mounting substrate 14 with the solder 15, the following problems occur.

上記従来の半導体装置では、枠体５にキャップ６を固定する際、封止部材３の中空内のガスや水分が内部にそのまま閉じ込められた状態になる。このため、リードフレーム２を実装用基板１４へ半田１５で固定する際の加熱によって、封止部材３の中空内に閉じ込められていたガスや水分が膨張する。そして、その圧力によってキャップ６と枠体５との接着部などの境界面で剥離が生じ、封止部材３内の気密性が損なわれることがある。   In the conventional semiconductor device, when the cap 6 is fixed to the frame 5, the gas and moisture in the hollow of the sealing member 3 are confined as they are. For this reason, the gas and moisture confined in the hollow of the sealing member 3 are expanded by heating when the lead frame 2 is fixed to the mounting substrate 14 with the solder 15. Then, the pressure may cause separation at a boundary surface such as an adhesive portion between the cap 6 and the frame body 5, and airtightness in the sealing member 3 may be impaired.

また、上記実装時の加熱によって封止部材３の中空内の残留水分が水蒸気となる。このため、キャップ６に光透過性のあるガラス板や樹脂板を用いた半導体装置では、水蒸気がキャップ６の内面に付着する。あるいは封止部材３の内外の温度差によって水蒸気が結露を生じる。その結果、光透過率が低下するなどの問題を生じる。   Further, the residual moisture in the hollow of the sealing member 3 becomes water vapor by the heating during the mounting. For this reason, in the semiconductor device using a light transmissive glass plate or resin plate for the cap 6, water vapor adheres to the inner surface of the cap 6. Alternatively, the water vapor causes dew condensation due to the temperature difference between the inside and outside of the sealing member 3. As a result, problems such as a decrease in light transmittance occur.

さらに、半導体装置の実装環境としては、これまでの鉛含有半田から鉛を含有しない鉛フリー半田に移行している。このため、実装時の加熱温度は、従来の錫−鉛（Ｓｎ−Ｐｂ）半田の融点が１８３℃に対し、錫−銀−銅（Ｓｎ−Ａｇ−Ｃｕ）半田では融点が２１７℃と３０℃以上高くなっている。加えて、実装方式が半田リフローによるものから、レーザー等の光を使った実装方式も用いられるようになってきている。光による実装ではパッケージ全体を予熱する必要がないので、封止部材３の内外の温度差がより大きくなる。このため、上記の封止部材３の剥離発生や中空内での結露などの不具合発生が一層顕著になる傾向にある。   Furthermore, the mounting environment of semiconductor devices has shifted from conventional lead-containing solder to lead-free solder that does not contain lead. Therefore, the heating temperature during mounting is 183 ° C. and 30 ° C. for the tin-silver-copper (Sn—Ag—Cu) solder, whereas the melting point of the conventional tin-lead (Sn—Pb) solder is 183 ° C. More than that. In addition, since mounting methods are based on solder reflow, mounting methods using light such as lasers have been used. In the case of mounting by light, it is not necessary to preheat the entire package, so that the temperature difference between the inside and outside of the sealing member 3 becomes larger. For this reason, troubles such as occurrence of peeling of the sealing member 3 and dew condensation in the hollows tend to become more prominent.

以上のような問題を解消するために、後掲の特許文献１および２は、半導体素子を封止する封止部材に通気孔を予め形成した構造を開示している。当該構造では、実装時に封止部材が加熱された場合でも、封止部材の中空内のガスや水分が通気孔を通して外部に排出される。このため、剥離や結露などの不具合発生を防止できるとされている。
特開２００４−１１９８８１号公報 特開２００６−１０８２８５号公報 In order to solve the above problems, Patent Documents 1 and 2 listed below disclose a structure in which air holes are formed in advance in a sealing member for sealing a semiconductor element. In this structure, even when the sealing member is heated during mounting, the gas and moisture in the hollow of the sealing member are discharged to the outside through the vent hole. For this reason, it is said that generation | occurrence | production of malfunctions, such as peeling and dew condensation, can be prevented.
JP 2004-119881 A JP 2006-108285 A

しかしながら、上記の特許文献１に記載されている従来技術では、実装用基板への実装後も封止部材に形成された通気孔は開放された状態のままなので、実装後にこの通気孔を通して封止部材の中空内に微細な塵埃等の異物が進入しやすくなる。特に、半導体素子がＣＣＤ等の光半導体素子である場合には、封止部材内に配置されたこの素子の表面やキャップ内面に異物が付着すると、素子への入射光量が減少し、半導体装置としての特性が劣化する。   However, in the prior art described in Patent Document 1 above, since the vent hole formed in the sealing member remains open even after mounting on the mounting substrate, sealing is performed through the vent hole after mounting. Foreign matter such as fine dust easily enters the hollow of the member. In particular, when the semiconductor element is an optical semiconductor element such as a CCD, if a foreign object adheres to the surface of the element or the inner surface of the cap disposed in the sealing member, the amount of incident light on the element decreases, and the semiconductor device The characteristics of the will deteriorate.

また、実装時には、封止部材の中空内に残留するガスや水分が通気孔を通して排出されるとしても、実装後は通気孔を経由して外部の湿気が再び中空内に進入し、その結果、キャップ内面が曇ったり、半導体素子自体の特性が劣化したりして、半導体素子の長期信頼性が損なわれる恐れがある。   In addition, when mounting, even if gas and moisture remaining in the hollow of the sealing member is exhausted through the vent hole, after mounting, external moisture again enters the hollow via the vent hole, The inner surface of the cap may become cloudy or the characteristics of the semiconductor element itself may deteriorate, and the long-term reliability of the semiconductor element may be impaired.

本発明は、上記の課題を解決するためになされたもので、実装時における封止部材の接合面での剥離や内部の結露などの不具合発生を有効に防止するとともに、実装後も長期信頼性を確保することができる半導体装置およびその製造方法を提供することを目的とする。   The present invention has been made to solve the above-described problems, and effectively prevents occurrence of defects such as peeling at the joint surface of the sealing member and internal condensation during mounting, and long-term reliability after mounting. An object of the present invention is to provide a semiconductor device and a method for manufacturing the same.

上記課題を解決するため本発明は以下の技術的手段を採用している。まず、本発明は、半導体素子と、前記半導体素子が搭載される配線板と、前記半導体素子を封止する封止部材とを備える半導体装置を前提としている。そして、本発明に係る半導体装置は、封止部材とシール部材とを備える。封止部材は、一端が開口した中空の枠体と、当該枠体の開口を閉鎖するキャップと、枠体またはキャップに設けられた、キャップが枠体に装着された状態で、枠体の中空部と枠体の外部とを連通する通気路とを備える。また、シール部材は、封止部材の外部に引き出された配線板を実装用基板へ固定した後に、上記通気路を閉鎖する。   In order to solve the above problems, the present invention employs the following technical means. First, the present invention is premised on a semiconductor device including a semiconductor element, a wiring board on which the semiconductor element is mounted, and a sealing member that seals the semiconductor element. The semiconductor device according to the present invention includes a sealing member and a sealing member. The sealing member includes a hollow frame having one end opened, a cap for closing the opening of the frame, a frame or a cap provided on the cap, and the hollow of the frame mounted on the frame. A ventilation path that communicates the portion and the outside of the frame. Further, the sealing member closes the air passage after fixing the wiring board drawn out of the sealing member to the mounting substrate.

本構成によれば、配線板を実装用基板へ固定する際に封止部材が加熱された場合でも、封止部材の中空内の残留ガスや残留水分が通気路を通して排出される。そのため、封止部材の接合面での剥離や内部の結露などの不具合発生を有効に防止することができる。しかも、実装後は通気路がシール部材によって密閉されるので、通気路を通じて外部の湿気や塵埃が封止部材の中空内に再び進入することはない。このため、実装後にキャップ内面の曇りや、半導体素子自体の特性が劣化するなどの不具合発生が防止され、長期信頼性を確保することができる。   According to this configuration, even when the sealing member is heated when the wiring board is fixed to the mounting substrate, residual gas and residual moisture in the hollow of the sealing member are discharged through the air passage. Therefore, it is possible to effectively prevent problems such as peeling at the joint surface of the sealing member and internal dew condensation. In addition, since the air passage is sealed by the sealing member after mounting, external moisture and dust do not enter the hollow of the sealing member again through the air passage. For this reason, problems such as clouding of the inner surface of the cap after mounting and deterioration of characteristics of the semiconductor element itself are prevented, and long-term reliability can be ensured.

上述の半導体装置において、例えば、上記通気路は、上記枠体の開口側の端縁に形成された溝とすることができ、上記シール部材は、上記枠体の内側から当該溝に嵌合された状態で固定される詰栓とすることができる。本構成では、外部からの接触等の機械的要因によって気密状態が破壊され難いので、半導体装置の長期信頼性を確保する上で有効である。また、上記通気路は、上記枠体の一部を内外に貫通する貫通孔であり、上記シール部材は上記枠体の外側から貫通孔内に充填される接着剤とすることもできる。これにより、貫通孔の密閉作業を極めて簡単に行うことができる。   In the above-described semiconductor device, for example, the air passage can be a groove formed at an end edge of the frame body on the opening side, and the seal member is fitted into the groove from the inside of the frame body. The plug can be fixed in a closed state. This configuration is effective in ensuring the long-term reliability of the semiconductor device because the hermetic state is not easily destroyed by mechanical factors such as external contact. Moreover, the said ventilation path is a through-hole which penetrates a part of said frame body inside and outside, and the said sealing member can also be made into the adhesive agent with which it fills in a through-hole from the outside of the said frame body. Thereby, the sealing operation of the through hole can be performed very easily.

以上の構成は、半導体素子が光半導体素子で、キャップが光透過性部材で構成されている場合、キャップ内面の曇りや半導体素子自体の特性劣化を防止する上で極めて有効な対策となる。また、配線板がリードフレームである場合、リードフレームを実装用基板に半田付けする際、封止部材が加熱されやすい。そのため、封止部材に予め通気路を形成して中空内の残留ガスや残留水分を排出し、実装後に通気路を塞ぐようにすることは、キャップ内面の曇りや半導体素子自体の特性劣化を防止する上で効果が大きい。   The above configuration is an extremely effective measure for preventing fogging of the inner surface of the cap and deterioration of characteristics of the semiconductor element itself when the semiconductor element is an optical semiconductor element and the cap is formed of a light transmitting member. When the wiring board is a lead frame, the sealing member is easily heated when the lead frame is soldered to the mounting substrate. Therefore, it is possible to prevent the fogging of the inner surface of the cap and the deterioration of the characteristics of the semiconductor element itself by forming a ventilation path in the sealing member in advance to discharge residual gas and moisture in the hollow and closing the ventilation path after mounting. The effect is great.

一方、他の観点では、本発明は、半導体素子と、前記半導体素子が搭載される配線板と、前記半導体素子を封止する、一端が開口した中空の枠体と当該枠体の開口を閉鎖するキャップとを有する封止部材とを備える半導体装置の製造方法を提供することができる。すなわち、本発明に係る半導体装置の製造方法では、まず、配線板上に半導体素子が搭載される。次いで、半導体素子が搭載された配線板が、配線板の一部を枠体の外部に引き出した状態で当該枠体内に収納される。その後、枠体の開口がキャップにより閉鎖される。また、開口が閉鎖された後、枠体の外部に引き出された配線板が実装用基板に固定される。そして、上記枠体または上記キャップに予め設けられた、キャップが枠体に装着された状態で枠体の中空部と枠体の外部とを連通する通気路が、シール部材によって枠体の内側から閉鎖される。   On the other hand, in another aspect, the present invention relates to a semiconductor element, a wiring board on which the semiconductor element is mounted, a hollow frame that seals the semiconductor element, and an open end of the frame, and the opening of the frame is closed. The manufacturing method of a semiconductor device provided with the sealing member which has a cap to perform can be provided. That is, in the method for manufacturing a semiconductor device according to the present invention, first, a semiconductor element is mounted on a wiring board. Next, the wiring board on which the semiconductor element is mounted is housed in the frame body with a part of the wiring board being pulled out of the frame body. Thereafter, the opening of the frame is closed by the cap. In addition, after the opening is closed, the wiring board drawn out of the frame is fixed to the mounting substrate. An air passage that is provided in advance in the frame body or the cap and communicates between the hollow portion of the frame body and the outside of the frame body in a state where the cap is attached to the frame body is formed from the inside of the frame body by the seal member. Closed.

本発明によれば、配線板を実装用基板へ固定する際に封止部材が加熱された場合でも、封止部材の中空内の残留ガスや残留水分が通気路を通して排出されるので、封止部材の接合面での剥離や内部の結露などの不具合発生を有効に防止することができる。また、実装後は通気路がシール部材によって密閉されるので、通気路を通じて外部の湿気や塵埃が封止部材の中空内に再び進入することはない。このため、実装後にキャップ内面の曇りや、半導体素子自体の特性が劣化するなどの不具合発生が防止され、長期信頼性を確保することができる。   According to the present invention, even when the sealing member is heated when fixing the wiring board to the mounting substrate, the residual gas or residual moisture in the hollow of the sealing member is discharged through the air passage. It is possible to effectively prevent the occurrence of problems such as peeling at the joint surface of the member and internal dew condensation. In addition, since the air passage is sealed by the seal member after mounting, external moisture and dust do not enter the hollow of the sealing member again through the air passage. For this reason, problems such as clouding of the inner surface of the cap after mounting and deterioration of characteristics of the semiconductor element itself are prevented, and long-term reliability can be ensured.

以下、本発明の実施形態を、図面を参照しながら詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

（第１の実施形態）
図１は本発明に係る第１の実施形態の半導体装置を示す平面図、図２は図１のＡ−Ａ線に沿う断面図である。また、図１および図２では、図１４および図１５に示した従来の半導体装置と対応もしくは相当する構成部分には同一の符号を付している。 (First embodiment)
FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA of FIG. In FIG. 1 and FIG. 2, the same reference numerals are given to components corresponding to or corresponding to the conventional semiconductor device shown in FIG. 14 and FIG. 15.

図１および図２に示すように、本実施形態の半導体装置は、半導体素子１と、この半導体素子１が搭載された配線板としてのリードフレーム２と、半導体素子１を封止する封止部材３とを備える。封止部材３は、合成樹脂からなり、リードフレーム２の下部に位置する基台４と、リードフレーム２の上部に位置する上端が開口した中空の枠体５と、この枠体５の開口側を閉鎖するキャップ６とを有する。そして、基台４と枠体５とは、リードフレーム２に直接にモールド成形され、また、キャップ６は、枠体５の開口側に接着剤で固定されている。なお、接着剤は、枠体５とキャップ６との接触面に配置される。図２の断面図では、溝７により枠体５とキャップ６とは非接触であるため、接着剤は図示されていない。また、基台４と枠体５とは別体として、リードフレーム２に対してそれぞれ接着剤で固定した構成とすることも可能である。さらに、半導体素子１がＣＣＤやフォトダイオードなどの光半導体素子である場合には、キャップ６としてガラス板や合成樹脂板等からなる光透過性材料が使用される。   As shown in FIGS. 1 and 2, the semiconductor device of this embodiment includes a semiconductor element 1, a lead frame 2 as a wiring board on which the semiconductor element 1 is mounted, and a sealing member that seals the semiconductor element 1. 3. The sealing member 3 is made of a synthetic resin, and includes a base 4 positioned at the lower part of the lead frame 2, a hollow frame 5 having an upper end opened at the upper part of the lead frame 2, and an opening side of the frame 5 And a cap 6 for closing. The base 4 and the frame 5 are molded directly on the lead frame 2, and the cap 6 is fixed to the opening side of the frame 5 with an adhesive. The adhesive is disposed on the contact surface between the frame 5 and the cap 6. In the cross-sectional view of FIG. 2, the frame 5 and the cap 6 are not in contact with each other due to the groove 7, so that the adhesive is not shown. Further, the base 4 and the frame 5 can be separated from each other and fixed to the lead frame 2 with an adhesive. Further, when the semiconductor element 1 is an optical semiconductor element such as a CCD or a photodiode, a light transmissive material made of a glass plate, a synthetic resin plate or the like is used as the cap 6.

また、図１および図２に示すように、本実施形態では、枠体５のキャップ６と接する開口側の上端縁の互いに対向する２個所に通気路としての溝７が形成されている。そして、各溝７にはシール部材としての詰栓１１が嵌合されて密閉され、さらに各詰栓１１は接着剤１３で固定されている。なお、後述するように、左右の各詰栓１１は、リードフレーム２が実装用基板１４に半田１５で固定された後に、封止部材３の内部側から各溝７に嵌合され、固定される。   Further, as shown in FIGS. 1 and 2, in this embodiment, grooves 7 are formed as air passages at two opposing positions on the upper end edge on the opening side in contact with the cap 6 of the frame 5. Each groove 7 is fitted and sealed with a stopper 11 as a sealing member, and each stopper 11 is fixed with an adhesive 13. As will be described later, the left and right plugs 11 are fitted and fixed to the grooves 7 from the inside of the sealing member 3 after the lead frame 2 is fixed to the mounting substrate 14 with the solder 15. The

一方、リードフレーム２は、ダイパッド２１と複数本のアウターリード２２とダム樹脂２３とを備え、封止部材３の中空内に位置するリードフレーム２のダイパッド２１上に上記の半導体素子１が銀ペーストなどの接着剤によって固定されている。また、半導体素子１の外部引出用の図示しない各電極は、金等によるボンディングワイヤ２５を介してそれぞれ対応するアウターリード２２の内端部に電気的に接続されている。また、各アウターリード２２の外端部は封止部材３の外部に引き出されてプリント配線基板などの実装用基板１４に半田１５で固定される。   On the other hand, the lead frame 2 includes a die pad 21, a plurality of outer leads 22, and a dam resin 23, and the semiconductor element 1 is silver paste on the die pad 21 of the lead frame 2 located in the hollow of the sealing member 3. It is fixed with adhesive. In addition, each electrode (not shown) for external extraction of the semiconductor element 1 is electrically connected to the inner end portion of the corresponding outer lead 22 via a bonding wire 25 made of gold or the like. Further, the outer end portion of each outer lead 22 is drawn out of the sealing member 3 and fixed to a mounting substrate 14 such as a printed wiring board with solder 15.

次に、この半導体装置の組立手順について説明する。図３はキャップ６装着前の状態を示す平面図である。また、図４は図３に示すＢ−Ｂ線における断面図である。図５は、溝７が形成された面を示す側面図である。図３から図５に示すように、リードフレーム２のダイパッド２１上に半導体素子１が搭載されて銀ペーストなどの接着剤で固定される。また、半導体素子１のそれぞれの電極は金等によるボンディングワイヤ２５によって各々対応するアウターリード２２の内端部に接続される。   Next, the assembly procedure of this semiconductor device will be described. FIG. 3 is a plan view showing a state before the cap 6 is attached. 4 is a cross-sectional view taken along line BB shown in FIG. FIG. 5 is a side view showing the surface on which the groove 7 is formed. As shown in FIGS. 3 to 5, the semiconductor element 1 is mounted on the die pad 21 of the lead frame 2 and fixed with an adhesive such as silver paste. Each electrode of the semiconductor element 1 is connected to the inner end portion of the corresponding outer lead 22 by a bonding wire 25 made of gold or the like.

この状態で、半導体素子１を取り囲むように基台４および枠体５が樹脂モールドにより一体成形される。その際、枠体５の開口側の上端縁には互いに対向した左右一対の溝７が形成される。また、リードフレーム２のアウターリード２２はモールド樹脂の外部に引き出されている。   In this state, the base 4 and the frame 5 are integrally formed by resin molding so as to surround the semiconductor element 1. At that time, a pair of left and right grooves 7 facing each other are formed at the upper end edge of the frame 5 on the opening side. Further, the outer leads 22 of the lead frame 2 are drawn out of the mold resin.

次に、詰栓１１とストッパ１７とが一体固定されている左右一対のフィルム１６を溝７内に挿入して枠体５の内外に架け渡す。図６は、フィルム１６が配置された状態を示す平面図であり、図７は図６に示すＣ−Ｃ線における断面図である。また、図８は、フィルム１６を示す平面図であり、図９は、フィルム１６の側面図である。さらに、図１０は、図８に示すＤ−Ｄ線における断面図である。図８および図９に示すように、各フィルム１６には、その一端に詰栓１１が接着剤で固定され、また、他端側にはストッパ１７が接着剤で固定されている。そして、図８および図１０に示すように、両詰栓１１の対向面の内、一方の詰栓１１には凸部１１ａが、他方の詰栓１１には凸部１１ａが嵌入される凹部１１ｂがそれぞれ形成されており、両者１１ａ、１１ｂを嵌合することにより互いが連結されている。そして、図６および図７に示すように、詰栓１１同士を結合した状態でフィルム１６を溝７内に配置すると、各ストッパ１７が枠体５の外側面に掛止されるとともに、フィルム１６の外端は枠体５の溝７よりも外側に突出する。   Next, a pair of left and right films 16, in which the plug 11 and the stopper 17 are integrally fixed, are inserted into the groove 7 and are laid over the inside and outside of the frame 5. FIG. 6 is a plan view showing a state in which the film 16 is arranged, and FIG. 7 is a cross-sectional view taken along the line CC shown in FIG. FIG. 8 is a plan view showing the film 16, and FIG. 9 is a side view of the film 16. Further, FIG. 10 is a cross-sectional view taken along the line DD shown in FIG. As shown in FIGS. 8 and 9, each film 16 has a stopper 11 fixed to one end thereof with an adhesive and a stopper 17 fixed to the other end with an adhesive. As shown in FIGS. 8 and 10, of the opposing surfaces of both plugs 11, a concave portion 11 b in which a convex portion 11 a is inserted into one plug 11 and a convex portion 11 a is inserted into the other plug 11. Are formed, and are connected to each other by fitting the both 11a and 11b. 6 and 7, when the film 16 is disposed in the groove 7 in a state where the plugs 11 are joined together, the stoppers 17 are hooked on the outer surface of the frame body 5, and the film 16 The outer end protrudes outward from the groove 7 of the frame 5.

以上のようにして、フィルム１６が配置された後、詰栓１１同士が結合された状態のまま、接着剤によりキャップ６が枠体５の上面に固定される。図１１は、キャップ６が固定された状態を示す断面図である。なお、図１１は、図７に示す断面に対応する断面である。なお、詰栓１１、フィルム１６、およびストッパ１７は、実装用基板への実装時に加わる熱に耐えられるように、１００℃以上の耐熱性のある材料でかつ加工性が良好な材料であることが求められる。このため、例えばポリカーボネート等の材料で作成されている。またフィルム１６は表面に合成ポリマによる吸水性高分子膜を形成しておいてもよい。   As described above, after the film 16 is disposed, the cap 6 is fixed to the upper surface of the frame body 5 by the adhesive while the plugs 11 are joined together. FIG. 11 is a cross-sectional view showing a state in which the cap 6 is fixed. 11 is a cross section corresponding to the cross section shown in FIG. The plug 11, the film 16, and the stopper 17 may be heat resistant materials of 100 ° C. or higher and good workability so that they can withstand the heat applied to the mounting substrate. Desired. For this reason, it is made of a material such as polycarbonate. The film 16 may have a water-absorbing polymer film made of a synthetic polymer on the surface.

引き続いて、リードフレーム２のアウターリード２２を半田１５で実装用基板１４に実装固定する。この時の半田付けを良好に行うため、アウターリード２２は２００℃以上の高温に加熱される。この熱により、封止部材３の内部から水分等がガス化して、中空内へ放出されるが、封止部材３には内外に通じる溝７が設けられているため、発生したガスは溝７を通して外部に排出される。そのため、中空内の圧力は上昇しない。   Subsequently, the outer leads 22 of the lead frame 2 are mounted and fixed to the mounting substrate 14 with the solder 15. In order to perform good soldering at this time, the outer lead 22 is heated to a high temperature of 200 ° C. or higher. Due to this heat, moisture or the like is gasified from the inside of the sealing member 3 and is released into the hollow. However, since the sealing member 3 is provided with a groove 7 that communicates with the inside and outside, the generated gas flows into the groove 7. It is discharged to the outside through. Therefore, the pressure in the hollow does not increase.

実装後は、封止部材３から外部に突出している各フィルム１６の両端を外方に向けて引っ張ることにより、詰栓１１の凸部１１ａと凹部１１ｂ（図８および図１０参照。）との結合が外れて二分され、各詰栓１１が溝７に嵌合して溝７を塞ぐ。ここで、実装時には封止部材３の中空内に発生した水蒸気は、キャップ６下面の一番温度の低いフィルム１６の表面で結露する可能性がある。しかしながら、実装後はフィルム１６が除かれるため、キャップ６内面に結露が生じることはない。   After mounting, the both ends of each film 16 projecting outward from the sealing member 3 are pulled outward, whereby the convex portion 11a and the concave portion 11b of the plug 11 (see FIGS. 8 and 10). The coupling is released and divided into two, and each plug 11 is fitted into the groove 7 to close the groove 7. Here, the water vapor generated in the hollow of the sealing member 3 at the time of mounting may be condensed on the surface of the film 16 having the lowest temperature on the lower surface of the cap 6. However, since the film 16 is removed after mounting, no condensation occurs on the inner surface of the cap 6.

そして、実装後に詰栓１１が溝７内に嵌入された状態で、この詰栓１１をさらに接着剤１３によって固定して詰栓１１と溝７との隙間を塞ぐことで、封止部材３内は確実に密閉される。なお、枠体５の外側にはみ出しているフィルム１６およびストッパ１７は接着剤１３が十分に固まった後に切除される。   Then, in a state in which the plug 11 is inserted into the groove 7 after mounting, the plug 11 is further fixed with an adhesive 13 to close the gap between the plug 11 and the groove 7, so that the inside of the sealing member 3 Is securely sealed. The film 16 and the stopper 17 protruding outside the frame body 5 are removed after the adhesive 13 is sufficiently hardened.

なお、上記実施形態では、枠体５の開口側の端縁に溝７を形成しているが、これに限らず、キャップ６の枠体５側の底面に溝７を形成することも可能である。
（第２の実施形態）
続いて、本発明の第２の実施形態について説明する。図１２は本発明の第２の実施形態の半導体装置を示す平面図であり、図１３は図１２に示すＥ−Ｅ線における断面図である。図１２および図１３では、図１および図２に示した半導体装置と対応もしくは相当する構成部分には同一の符号を付しいている。 In the above embodiment, the groove 7 is formed at the opening edge of the frame body 5. However, the present invention is not limited to this, and the groove 7 can be formed on the bottom surface of the cap 6 on the frame body 5 side. is there.
(Second Embodiment)
Subsequently, a second embodiment of the present invention will be described. FIG. 12 is a plan view showing a semiconductor device according to the second embodiment of the present invention, and FIG. 13 is a cross-sectional view taken along the line EE shown in FIG. 12 and FIG. 13, the same reference numerals are given to the components corresponding to or corresponding to the semiconductor device shown in FIG. 1 and FIG.

図１２および図１３に示すように、本実施形態の半導体装置には、半導体素子１が収納された封止部材３を構成する枠体５の周側部の左右の２個所において、その上部外側から下部内側へ向けて傾斜した状態で内外に貫通する通気路としての貫通孔１８がそれぞれ形成されている。   As shown in FIG. 12 and FIG. 13, the semiconductor device of this embodiment includes an upper outer portion at two locations on the left and right sides of the peripheral side portion of the frame 5 constituting the sealing member 3 in which the semiconductor element 1 is accommodated. A through-hole 18 is formed as an air passage that penetrates from the inside to the outside in a state inclined from the bottom to the inside of the lower part.

そして、各貫通孔１８は、アウターリード２２を半田１５で実装用基板１４に実装固定する際には開放されている。このため、加熱により封止部材３の内部から発生した水蒸気等はこの貫通孔１８を通じて外部に排出される。特に、レーザー等により半田を加熱して、アウターリード２２を実装用基板１４に固定する場合、アウターリード２２から封止部材３へ熱が伝播するため、アウターリード２２（リードフレーム２）と接触する封止部材３の下部の温度がより上昇する。そのため、封止部材３の下部からより多くの水蒸気が発生する。また、封止部材３の下部で発生した水蒸気は、封止部材３の内部を下方から上方に向かって移動する。本実施形態では、封止部材３の下部内側に貫通孔１８の一端が位置し、上部外側へ向かって貫通孔１８が設けられているため、このような状況下であっても封止部材３の外部に水蒸気を効率よく排出することができる。   Each through hole 18 is opened when the outer lead 22 is mounted and fixed to the mounting substrate 14 with the solder 15. For this reason, the water vapor | steam etc. which generate | occur | produced from the inside of the sealing member 3 by heating are discharged | emitted outside through this through-hole 18. FIG. In particular, when the solder is heated by a laser or the like and the outer lead 22 is fixed to the mounting substrate 14, the heat propagates from the outer lead 22 to the sealing member 3, so that it contacts the outer lead 22 (lead frame 2). The temperature of the lower part of the sealing member 3 rises more. Therefore, more water vapor is generated from the lower part of the sealing member 3. Further, the water vapor generated at the lower portion of the sealing member 3 moves from the lower side to the upper side inside the sealing member 3. In the present embodiment, one end of the through hole 18 is located inside the lower part of the sealing member 3 and the through hole 18 is provided toward the upper outer side. Therefore, even under such circumstances, the sealing member 3 The water vapor can be efficiently discharged to the outside.

実装後は、シール部材としての接着剤１９を封止部材３の外部から貫通孔１８内に充填することによって、封止部材３の中空内が密閉される。したがって、この第２の実施形態では、第１の実施形態のような詰栓１１を用いないため、貫通孔１８の口径は、溝７の場合よりも十分小さくなるように形成することができる。   After the mounting, the inside of the hollow of the sealing member 3 is sealed by filling the through hole 18 with the adhesive 19 as a sealing member from the outside of the sealing member 3. Therefore, in this second embodiment, since the plug 11 as in the first embodiment is not used, the diameter of the through hole 18 can be formed to be sufficiently smaller than that of the groove 7.

なお、本実施形態では、枠体５の周側部に貫通孔１８を形成しているが、これに限らず、キャップ６の一部に貫通孔を形成した構成とすることも可能である。また、貫通孔１８の数は何ら限定されるものではない。   In the present embodiment, the through hole 18 is formed in the peripheral side portion of the frame body 5. However, the present invention is not limited to this, and a configuration in which the through hole is formed in a part of the cap 6 is also possible. Further, the number of through holes 18 is not limited at all.

以上説明したように、本発明によれば、配線板を実装用基板へ固定する際に封止部材が加熱された場合でも、封止部材の中空内の残留ガスや残留水分が通気路を通して排出されるので、封止部材の接合面での剥離や内部の結露などの不具合発生を有効に防止することができる。また、実装後は通気路がシール部材によって密閉されるので、通気路を通じて外部の湿気や塵埃が封止部材の中空内に再び進入することはない。このため、実装後にキャップ内面が曇ったり、半導体素子自体の特性が劣化するなどの不具合発生が防止され、長期信頼性を確保することができる。   As described above, according to the present invention, even when the sealing member is heated when fixing the wiring board to the mounting substrate, residual gas and residual moisture in the hollow of the sealing member are discharged through the air passage. Therefore, it is possible to effectively prevent problems such as peeling at the joint surface of the sealing member and internal dew condensation. In addition, since the air passage is sealed by the seal member after mounting, external moisture and dust do not enter the hollow of the sealing member again through the air passage. Therefore, it is possible to prevent the occurrence of problems such as the cap inner surface being clouded after mounting or the deterioration of the characteristics of the semiconductor element itself, and long-term reliability can be ensured.

なお、以上で説明した実施形態は本発明の技術的範囲を制限するものではなく、既に記載したもの以外でも、本発明の範囲内で種々の変形や応用が可能である。例えば、上記各実施形態では、配線板がリードフレーム２である場合について説明したが、このようなリードフレーム２に限定されるものではなく、印刷配線板、あるいは絶縁基板上にメッキ、蒸着などの薄膜形成手段で配線を形成した配線基板である場合にも適用することが可能である。   The embodiments described above do not limit the technical scope of the present invention, and various modifications and applications can be made within the scope of the present invention other than those already described. For example, in each of the above-described embodiments, the case where the wiring board is the lead frame 2 has been described. However, the present invention is not limited to such a lead frame 2, and plating, vapor deposition, or the like may be performed on a printed wiring board or an insulating substrate. The present invention can also be applied to a wiring board in which wiring is formed by thin film forming means.

本発明は、実装時における不具合発生を有効に防止するとともに、実装後も長期信頼性を確保することができるという効果を有し、半導体装置およびその製造方法として有用である。   The present invention is effective as a semiconductor device and a method for manufacturing the semiconductor device because it effectively prevents occurrence of defects during mounting and can ensure long-term reliability after mounting.

本発明の第１の実施形態における半導体装置を示す平面図The top view which shows the semiconductor device in the 1st Embodiment of this invention 本発明の第１の実施形態における半導体装置を示す断面図Sectional drawing which shows the semiconductor device in the 1st Embodiment of this invention 本発明の第１の実施形態における半導体装置の組み立て途中の状態を示す平面図The top view which shows the state in the middle of the assembly of the semiconductor device in the 1st Embodiment of this invention 本発明の第１の実施形態における半導体装置の組立過程を示す断面図Sectional drawing which shows the assembly process of the semiconductor device in the 1st Embodiment of this invention 本発明の第１の実施形態における半導体装置の組立過程を示す側面図The side view which shows the assembly process of the semiconductor device in the 1st Embodiment of this invention. 本発明の第１の実施形態における半導体装置の組立過程を示す平面図The top view which shows the assembly process of the semiconductor device in the 1st Embodiment of this invention 本発明の第１の実施形態における半導体装置の組立過程を示す断面図Sectional drawing which shows the assembly process of the semiconductor device in the 1st Embodiment of this invention 詰栓とストッパとが一体固定されている左右一対のフィルムを示す平面図A plan view showing a pair of left and right films in which a plug and a stopper are integrally fixed 詰栓とストッパとが一体固定されている左右一対のフィルムを示す側面図Side view showing a pair of left and right films in which the stopper and stopper are integrally fixed 詰栓を示す要部断面図Cross section of the main part showing the plug 本発明の第１の実施形態における半導体装置の組立過程を示す断面図Sectional drawing which shows the assembly process of the semiconductor device in the 1st Embodiment of this invention 本発明における第２の実施形態における半導体装置を示す平面図The top view which shows the semiconductor device in 2nd Embodiment in this invention 本発明における第２の実施形態における半導体装置を示す断面図Sectional drawing which shows the semiconductor device in 2nd Embodiment in this invention 従来の半導体装置の一例を示す平面図A plan view showing an example of a conventional semiconductor device 従来の半導体装置の一例を示す断面図Sectional drawing which shows an example of the conventional semiconductor device

符号の説明Explanation of symbols

１ 半導体素子
２ リードフレーム（配線板）
３ 封止部材
７ 溝（通気路）
１１ 詰栓（シール部材）
１４ 実装用基板
１８ 貫通孔（通気路）
１９ 接着剤（シール部材） 1 Semiconductor element 2 Lead frame (wiring board)
3 Sealing member 7 Groove (air passage)
11 Plug (seal member)
14 Mounting substrate 18 Through hole (air passage)
19 Adhesive (seal member)

Claims (6)

半導体素子と、前記半導体素子が搭載される配線板と、前記半導体素子を封止する封止部材とを備える半導体装置であって、
一端が開口した中空の枠体と、
当該枠体の前記開口を閉鎖するキャップと、
前記枠体またはキャップに設けられた、前記キャップが前記枠体に装着された状態で、前記枠体の中空部と枠体の外部とを連通する通気路と、
を備えた前記封止部材と、
前記封止部材の外部に引き出された前記配線板を実装用基板へ固定した後に、前記通気路を閉鎖するシール部材と、
を備えたことを特徴とする半導体装置。 A semiconductor device comprising a semiconductor element, a wiring board on which the semiconductor element is mounted, and a sealing member that seals the semiconductor element,
A hollow frame with one end open;
A cap for closing the opening of the frame,
An air passage provided in the frame or the cap, wherein the cap is attached to the frame, and communicates the hollow portion of the frame with the outside of the frame;
The sealing member comprising:
A sealing member for closing the air passage after fixing the wiring board drawn out of the sealing member to the mounting substrate;
A semiconductor device comprising: 前記通気路が前記枠体の前記開口側の端縁に形成された溝であり、前記シール部材が前記枠体の内側から前記溝に嵌合された状態で固定される詰栓である請求項１記載の半導体装置。   The air passage is a groove formed at an edge of the frame on the opening side, and the sealing member is a plug that is fixed in a state of being fitted into the groove from the inside of the frame. 1. The semiconductor device according to 1. 前記通気路が前記枠体の一部を内外に貫通する貫通孔であり、前記シール部材が前記枠体の外側から前記通気路内に充填される接着剤である請求項１記載の半導体装置。   2. The semiconductor device according to claim 1, wherein the air passage is a through-hole penetrating a part of the frame body inward and outward, and the seal member is an adhesive filled in the air passage from the outside of the frame body. 前記半導体素子が光半導体素子であり、前記キャップが光透過性部材である請求項１から３のいずれか１項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the semiconductor element is an optical semiconductor element, and the cap is a light transmissive member. 前記配線板がリードフレームである請求項１から４のいずれか１項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the wiring board is a lead frame. 半導体素子と、前記半導体素子が搭載される配線板と、前記半導体素子を封止する、一端が開口した中空の枠体と当該枠体の開口を閉鎖するキャップとを有する封止部材とを備える半導体装置の製造方法であって、
配線板上に半導体素子を搭載する工程と、
前記半導体素子が搭載された配線板を、前記配線板の一部を前記枠体の外部に引き出した状態で前記枠体内に収納する工程と、
前記枠体の開口を前記キャップにより閉鎖する工程と、
前記開口が閉鎖された後、前記枠体の外部に引き出された配線板を実装用基板へ固定する工程と、
前記配線板が実装用基板に固定された後、前記枠体または前記キャップに予め設けられた、前記キャップが前記枠体に装着された状態で前記枠体の中空部と枠体の外部とを連通する通気路を、シール部材によって前記枠体の内側から閉鎖する工程と、
を有することを特徴とする半導体装置の製造方法。 A semiconductor element; a wiring board on which the semiconductor element is mounted; and a sealing member that seals the semiconductor element and includes a hollow frame having an open end and a cap that closes the opening of the frame. A method for manufacturing a semiconductor device, comprising:
Mounting a semiconductor element on a wiring board;
Storing the wiring board on which the semiconductor element is mounted in the frame in a state in which a part of the wiring board is pulled out of the frame; and
Closing the opening of the frame with the cap;
Fixing the wiring board drawn out of the frame body to the mounting substrate after the opening is closed;
After the wiring board is fixed to the mounting substrate, the hollow portion of the frame body and the outside of the frame body are provided in advance in the state where the cap is mounted on the frame body or the cap. Closing the communicating air passage from the inside of the frame by a sealing member;
A method for manufacturing a semiconductor device, comprising:
JP2007250021A 2007-09-26 2007-09-26 Semiconductor device and method of manufacturing the same Pending JP2009081303A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019050267A (en) * 2017-09-08 2019-03-28 エムテックスマツムラ株式会社 Hollow package container and semiconductor element package
JP2020136495A (en) * 2019-02-20 2020-08-31 中央電子工業株式会社 Hollow package structure, manufacturing method of the same, semiconductor device, and manufacturing method of the same
JP2021057454A (en) * 2019-09-30 2021-04-08 浜松ホトニクス株式会社 Photodetector

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019050267A (en) * 2017-09-08 2019-03-28 エムテックスマツムラ株式会社 Hollow package container and semiconductor element package
JP7025153B2 (en) 2017-09-08 2022-02-24 エムテックスマツムラ株式会社 Hollow package container, semiconductor device package and its manufacturing method
JP2020136495A (en) * 2019-02-20 2020-08-31 中央電子工業株式会社 Hollow package structure, manufacturing method of the same, semiconductor device, and manufacturing method of the same
JP2021057454A (en) * 2019-09-30 2021-04-08 浜松ホトニクス株式会社 Photodetector
WO2021065272A1 (en) * 2019-09-30 2021-04-08 浜松ホトニクス株式会社 Photodetector

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