JP2009081273A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device (IPM) whose plane area can be reduced. <P>SOLUTION: An IPM1 comprises a U-phase output part 2, a V-phase output part 3, a W-phase output part 4, a control part 5, a step-up part 6, and a cooling part 7. The step-up part 6, the control part 5, and the output parts 2-4 outputting varying phases are arranged on different surfaces of a rectangular solid which intersect one another. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device that is an intelligent power module including a power device and a control circuit.

  2. Description of the Related Art Conventionally, there is known an IPM that is a power module in which a power device including an IGBT or the like and a control circuit for controlling the gate or the like of the IGBT are integrally provided.

Patent Document 1 discloses an IPM in which a power device (output unit) for outputting a U phase, a V phase, and a W phase is arranged at the bottom of a single flat module.
JP 2005-142228 A

  However, in the IPM of Patent Document 1, since the power device is installed at the bottom of a single planar module, there is a problem that the plane area increases.

  The present invention has been made in order to solve the above-described problems, and an object of the present invention is to provide a semiconductor device capable of reducing the plane area.

  In order to achieve the above object, the invention according to claim 1 is arranged in a first output section that outputs a first phase, a plane that intersects a plane on which the first output section is disposed, and a first phase. A semiconductor device comprising: a second output unit that outputs a second phase having a phase different from the first phase; and a control unit that controls the output unit.

  The invention according to claim 2 is characterized in that the surface on which the first output unit is arranged and the surface on which the second output unit is arranged are different surfaces of a polyhedron. It is a semiconductor device.

  According to a third aspect of the present invention, the surface on which the control unit is arranged is any one of a polyhedron different from the surface on which the first output unit is arranged and the surface on which the second output unit is arranged. The semiconductor device according to claim 2, wherein the semiconductor device is a surface.

  According to a fourth aspect of the present invention, the first output section and the second output section include a heat sink, and the first output section and the second output section are arranged so that the heat sink is inside. The semiconductor device according to claim 2, wherein the semiconductor device is configured as described above.

  The invention according to claim 5 is characterized in that the first output unit and the second output unit include a heat sink, and the first output unit and the second output unit are arranged such that the heat sink is outside. The semiconductor device according to claim 2, wherein the semiconductor device is configured as described above.

  The invention described in claim 6 is characterized in that the surface on which the first output portion is arranged and the surface on which the second output portion is arranged are two different surfaces of the folded plate member. A semiconductor device according to claim 1.

  According to a seventh aspect of the present invention, in the semiconductor device according to any one of the first to sixth aspects, the first output unit is erected on the control unit. is there.

  According to an eighth aspect of the present invention, the first output unit includes a control bus bar for connection to the control unit, and the control bus bar is inserted into a hole formed in the control unit. 8. The semiconductor device according to claim 7, wherein the semiconductor device is formed.

  The invention according to claim 9 is characterized in that the first output unit and the second output unit include a heat radiating plate that conducts heat in a direction different from a direction in which the control unit is arranged. A semiconductor device according to any one of claims 1 to 8.

  According to a tenth aspect of the present invention, each of the first output unit and the second output unit includes a first bus bar in which a current flows in a first direction and a second direction opposite to the first direction. The first bus bar of the first output unit is closer to the second bus bar of the second output unit than the first bus bar of the second output unit The semiconductor device according to claim 1, wherein the semiconductor device is disposed at a position.

  According to an eleventh aspect of the present invention, the first output unit and the second output unit share a first bus bar through which a current flows in a first direction, and are opposite to the first direction. The first bus bar and the second bus bar are stacked via an insulating member, sharing a second bus bar through which current flows in the direction of 2. It is a semiconductor device given in any 1 paragraph.

  According to a twelfth aspect of the present invention, the first output unit includes a plurality of semiconductor elements and a wiring board on which the semiconductor elements are provided, and the plurality of semiconductor elements are arranged on both surfaces of the substrate. The semiconductor device according to any one of claims 1 to 3 and claim 6.

  According to the semiconductor device of the present invention, it is possible to reduce the plane area by arranging two output units that output different phases on different planes that intersect each other.

(First embodiment)
Hereinafter, a first embodiment in which the present invention is applied to a three-phase intelligent power module (hereinafter referred to as IPM) will be described with reference to the drawings. FIG. 1 is an overall perspective view of an IPM according to the first embodiment. FIG. 2 is a cross-sectional view taken along the line II-II in FIG. FIG. 3 is a cross-sectional view taken along line III-III in FIG. FIG. 4 is a plan view of the U-phase output unit. 5 is a cross-sectional view taken along line VV in FIG. FIG. 6 is a perspective view for explaining the switching device. FIG. 7 is a perspective view for explaining the diode. FIG. 8 is a schematic circuit diagram of the IPM.

  As shown in FIGS. 1 to 3, the IPM 1 according to the first embodiment includes a U-phase output unit 2, a V-phase output unit 3, a W-phase output unit 4, a control unit 5, a booster unit 6, and a cooling unit. Part 7. The output units 2 to 4 that output different phases, the control unit 5 and the boosting unit 6 are arranged on different planes of the rectangular parallelepiped, which are planes that intersect each other. Further, the output units 2 to 4 and the booster unit 6 are fixed by screws (not shown) in a state of being erected vertically to the control unit 5.

  As shown in FIGS. 4 and 5, the U-phase output unit 2 includes a high voltage unit 11, a low voltage unit 12, a wiring board 13, a heat radiating plate 14, seven bus bars 15 to 21, and a plurality of Al wires 22. And a case 23.

  The high voltage unit 11 is supplied with DC power having a high voltage (positive voltage) from the P-side power supply unit. The high voltage unit 11 includes a switching device 32 made of an npn IGBT (Insulated Gate Bipolar Transistor) or a MOS (Metal Oxide Semiconductor) transistor, a backflow preventing commutation diode (hereinafter referred to as a diode) 33, and a wiring board 13. And an Al wiring 34 formed on the substrate.

  As shown in FIG. 6, a gate 32 g and a source 32 s are formed on the upper surface of the switching device 32. On the lower surface of the switching device 32, a drain 32d connected to the Al wiring 34 through solder is formed. In the following description, when the drains, gates, and sources of other switching devices are described, the numbers d, g, and s are assigned to the numbers of the switching devices. As shown in FIGS. 4 and 8, the drain 32 d of the switching device 32 is connected to the P-side power supply bus bar 16 via the Al wiring 34 and the Al wire 22. The source 32 s of the switching device 32 is connected to the U-phase output bus bar 15 via the Al wire 22. The source 32 s of the switching device 32 is also connected to the bus bar 19 for connecting to the booster 6 via the Al wire 22. The gate 32 g of the switching device 32 is connected to the bus bar 18 for connecting the gate driver via the Al wire 22.

  Moreover, the material which comprises the switching device 32 is not specifically limited, Si, SiC, GaN, AlN, a diamond, etc. can be suitably changed according to a use and the objective. For example, SiC and GaN are preferable when it is desired to suppress switching loss and power loss. Note that SiC is also effective when operated at a high temperature (about 300 ° C.). In addition, GaN is preferable when driving at a high frequency. When GaN is employed, unnecessary inductance component (L component) and capacitance component (C component) can be further suppressed, and downsizing is also possible. Moreover, AlN is preferable when it is desired to increase the dielectric breakdown coefficient and improve the breakdown voltage. In addition, when AlN is adopted and the wiring board 13 is made of the same AlN, the generation of thermal stress due to the difference in thermal expansion coefficient can be suppressed. In addition, when diamond is used, all the physical property values of the above-described materials are exceeded, so that the IPM 1 can be downsized and power loss and switching loss can be greatly reduced.

  The diode 33 is for preventing a current from flowing backward through the switching device 32. As shown in FIG. 7, an anode 33 a is formed on the upper surface of the diode 33. On the lower surface of the diode 33, a cathode 33k connected to the Al wiring 34 through solder is formed. In the following description, when the anodes and cathodes of other diodes are described, the numbers a and k are assigned to the diode numbers. As shown in FIGS. 4 and 8, the anode 33 a of the diode 33 is connected to the U-phase output bus bar 15 via the Al wire 22. The cathode 33 k of the diode 33 is connected to the P-side power supply bus bar 16 via the Al wiring 34 and the Al wire 22. That is, the diode 33 is connected such that the direction from the source 32 s to the drain 32 d of the switching device 32 is the forward direction. Moreover, the material which comprises the diode 33 is not specifically limited, Like the switching device 32, Si, SiC, GaN, AlN, a diamond, etc. can be suitably changed according to a use and the objective.

  The low-voltage unit 12 is supplied with DC power having a voltage (negative voltage) lower than the power supplied from the P-side power supply unit from the N-side power supply unit. The low-voltage unit 12 includes a switching device 36 made of an npn type IGBT or MOS (Metal Oxide Semiconductor) transistor, a backflow preventing commutation diode (hereinafter referred to as a diode) 37, and an Al wiring 38 formed on the wiring substrate 13. And.

  The drain 36 d of the switching device 36 is connected to the U-phase output bus bar 15 via the Al wiring 38 and the Al wire 22. The source 36 s of the switching device 36 is connected to the N-side power supply bus bar 17 via the Al wire 22. The source 36 s of the switching device 36 is also connected to the bus bar 20 for connecting to the booster 6 via the Al wire 22. The gate 36g of the switching device 36 is connected to the bus bar 21 for connecting the gate driver.

  The anode 37 a of the diode 37 is connected to the N-side power supply bus bar 17 via the Al wire 22. The cathode 37 k of the diode 37 is connected to the U-phase output bus bar 15 via the Al wiring 38 and the Al wire 22.

The wiring board 13 is made of insulating Al ₂ O ₃ , AlN, Si ₃ N ₄ or SiO ₂ . Al wirings 34 and 38 are formed on the outer surface of the wiring board 13 (DBA (Direct Brazed Aluminum)). Instead of the Al wirings 34 and 38, a Cu wiring may be formed (DBC (Direct Bonding Copper)). On the other hand, a heat radiating plate 14 is bonded to the inner surface of the wiring board 13 by a bonding agent (not shown) made of a metal having good thermal conductivity (for example, Al or Cu).

  The heat radiating plate 14 is for radiating the heat generated from the high voltage part 11 and the low voltage part 12 conducted through the wiring board 13 to the outside. The heat sink 14 is insulated from the high voltage part 11 and the low voltage part 12 by an insulating wiring board 13. As shown in FIG. 3, the heat radiating plate 14 is made of a thermally conductive anisotropic material having a high thermal conductivity in a direction S1 perpendicular to the surface, that is, a direction S1 different from the direction in which the control unit 5 is disposed. ing. As the thermally conductive anisotropic material, for example, a material in which carbon fibers whose directions are aligned are embedded in aluminum can be applied. The outer peripheral part of the heat sink 14 is bonded to the inner surface of the case 23 with an adhesive.

  The bus bars 15 to 21 are fixed to the case 23 with a central portion embedded therein. Thus, one end of the bus bars 15 to 21 is disposed on the recessed portion 23 d side of the case 23 and the other end is disposed on the outside of the case 23. The bus bars 15 to 21 are formed in a plate shape from conductive Cu or Al. The bus bar 15 is for outputting the U phase. The bus bar 16 is for supplying P-side power. The bus bar 17 is for supplying N-side power. That is, a current in the direction opposite to that of the bus bar 17 flows through the bus bar 16. The bus bars 18 and 21 are connected to gate drives 43 and 44 of the control unit 5 described later. The bus bars 19 and 20 are connected to the booster 6 through gate drives 43 and 44.

  The case 23 is made of a synthetic resin and is formed in a rectangular plate shape. A window 23 a is formed at the center of the case 23. The wiring board 13 is fitted into the window 23a. On one side of the case 23, a pair of screw holes 23b having screw grooves are formed so as to extend to the window 23a. In the other side portion of the case 23, an insertion hole 23c is formed that is fitted from the outside to the inside. As shown in FIG. 2, the case 23 is fixed to each other by screwing the screw 26 inserted into the insertion hole 23 c of the case 23 into the screw hole 23 b of the adjacent case 23. The case 23 has a recess 23d that is slightly larger than the window 23a. The recess 23d is filled with a protective gel 24 for protecting and insulating the high-pressure part 11, the low-pressure part 12, and the like. The protective gel 24 is made of a soft silicone resin or epoxy resin that can withstand heat of about 180 ° C. The outer surface of the protective gel 24 is covered with a lid 25 that prevents leakage of the protective gel 24 and suppresses heat conduction to the high-pressure part 11 and the low-pressure part 12.

  Since the V-phase output unit 3 and the W-phase output unit 4 have substantially the same configuration as the U-phase output unit 2, only differences will be described. The V-phase output unit 3 outputs a V-phase that is different in phase from the U-phase from the output bus bar 15. The W-phase output unit 4 outputs a V-phase that is different in phase from the U-phase and the V-phase from the output bus bar 15. The bus bars 18 and 21 of the V-phase output unit 3 are connected to the gate drives 45 and 46 of the control unit 5. The bus bars 19 and 20 of the V-phase output unit 3 are connected to the booster unit 6 through gate drives 45 and 46. The bus bars 18 and 21 of the W-phase output unit 4 are connected to the gate drives 47 and 48 of the control unit 5. Further, the bus bars 19 and 20 of the W-phase output unit 4 are connected to the boosting unit 6 via gate drives 47 and 48.

  The control unit 5 includes a heat insulating material 41, a wiring board 42, six gate drives 43 to 48, and an Al wiring 50. Only a part of the Al wiring 50 is shown. The heat insulating material 41 is for suppressing that the heat from each phase output part 2-4 is conducted to the gate drives 43-48 which are weak to heat. The heat insulating material 41 is made of an insulating polyimide resin that can withstand heat of about 350 ° C., and is disposed between the wiring substrate 42 and the phase output units 2 to 4. Holes 49 (see FIG. 11) for inserting the control bus bars 15 to 21 and the bus bars 55 to 60 are formed in the outer peripheral portions of the heat insulating material 41 and the wiring board 42. From each hole 49, Al wiring 50 for connecting the bus bars 18 to 21, the gate drives 43 to 48, and the bus bars 55 to 60 extends. The bus bars 18 to 21 and the bus bars 55 to 60 and the Al wiring 50 are connected by solder.

  Each of the gate drives 43 to 48 is provided on the wiring board 42. The gate drive 43 (44) is for controlling the gate 32g (36g) of the switching device 32 (36) provided in the U-phase output unit 2. The gate drive 45 (46) is for controlling the gate 32g (36g) of the switching device 32 (36) provided in the V-phase output unit 3. The gate drive 47 (48) is for controlling the gate 32g (36g) of the switching device 32 (36) provided in the W-phase output unit 4.

  As shown in FIG. 2, the boosting unit 6 includes a boosting circuit unit 51, an Al wiring 52, a wiring board 53, a heat sink 54, and six bus bars 55-60 connected to the gate drives 43-48, A case 23 is provided. The step-up unit 6 controls the voltages of the sources 32 s and 36 s of the switching devices 32 and 36 of the output units 2 to 4 connected through the gate drives 43 to 48, the bus bars 19 and 20, and the bus bars 55 to 60. Thereby, the voltage of the gates 32g and 36g of the switching devices 32 and 36 is stabilized, and it is suppressed that a high voltage is applied to the gates 32g and 36g.

  The cooling unit 7 includes a cylindrical member 61 and a cooling fan 62. The cylindrical member 61 is attached to the case 23 via a fixing member (not shown). A predetermined interval is provided between one end of the cylindrical member 61 and the control unit 5. A cooling fan 62 is provided at the other end of the cylindrical member 61. The cooling fan 62 is configured to be able to blow air toward the control unit 5.

  Next, the operation of the IPM 1 described above will be described.

  When power is supplied from the bus bar 16 for P-side power supply and the bus bar 17 for N-side power supply while the gates 32g and 36g of the switching devices 32 and 36 are controlled by the gate drives 43 to 48, The output units 2 to 4 output three-phase AC power having different phases. Further, during operation, the air blown from the cooling fan 62 flows in the arrow direction F1 shown in FIG. Thereby, the blown air reaches the control unit 5 through the cylindrical member 61. After cooling the control unit 5, the air flows outside the cylindrical member 61 in the arrow direction F <b> 2, cools the output units 2 to 4 and the pressure boosting unit 6 of each phase, and is exhausted.

  Next, the assembly process of the IPM 1 described above will be described. 9 to 11 are perspective views for explaining an IPM assembly process.

  First, as shown in FIG. 9, the case 23 is manufactured by injection molding in a state where the bus bars 15 to 21 are placed in a mold. Next, as shown in FIG. 10, the heat radiating plate 14 to which the high voltage section 11, the low voltage section 12 and the wiring board 13 are bonded is bonded to the case 23. Thereafter, as shown in FIG. 4, an Al wire 22 is laid. Next, as illustrated in FIG. 11, the output units 2 to 4 and the case 23 of the booster unit 6 are fixed to each other with screws 26. Thereafter, the control unit 5 is placed on the output units 2 to 4 and the boosting unit 6 so that the bus bars 15 to 21 and the bus bars 55 to 60 coincide with the holes 49 of the control unit 5 and fixed with screws (not shown). To do. Thereby, bus bar 15-21 and bus bar 55-60 and Al wiring 50 are electrically connected by solder. Thereafter, the cooling unit 7 is attached to complete the IPM 1.

  As described above, in the IPM 1 according to the first embodiment, the output units 2 to 4, the control unit 5, and the booster unit 6 are arranged on different planes of the rectangular parallelepiped that intersect with each other. Thereby, compared with the case where all are arrange | positioned on the same plane shape, a plane area can be made small. Moreover, even when a rectifier circuit or the like is newly provided, the increase in the planar area can be suppressed by forming the polyhedron. Furthermore, since it can reduce that each of the switching devices 32 and 36 and the diodes 33 and 37 adjoin each other by comprising in a polyhedron, the heat concentration can be suppressed.

  In addition, in the IPM 1, by arranging the output units 2 to 4, the control unit 5, and the booster unit 6 on different surfaces of the rectangular parallelepiped that intersect with each other, the air for cooling can be easily blown, and the cooling unit 7. It can be cooled by attaching one to the inside of the rectangular parallelepiped. As a result, the cooling function can be improved. Therefore, even when the output units 2 to 4 are operated at a high temperature (for example, about 200 ° C.), damage to the gate drives 43 to 48 that are vulnerable to heat can be suppressed. . As a result, the life of the IPM 1 can be extended.

  In general, a gate drive is often formed on the output unit, and heat from the output unit is easily transferred to the gate drive. However, in the IPM 1, the output units 2 to 4 are set vertically with respect to the control unit 5. By providing, the transmission of the heat from the output parts 2-4 to the control part 5 can be suppressed. Furthermore, heat transmission can be further suppressed by providing the heat insulating material 41 between the gate drives 43 to 48 and the output units 2 to 4.

  In addition, since the control bus bars 15 to 21 and the bus bars 55 to 60 are inserted into the holes 49 of the control unit 5 and connected to the Al wiring 50, positioning and connection can be easily performed.

(Second Embodiment)
Next, a second embodiment in which the first embodiment described above is partially changed will be described. In addition, the same code | symbol is attached | subjected to the structure similar to 1st Embodiment, and description is abbreviate | omitted. FIG. 12 is a diagram corresponding to FIG. 2 of the IPM according to the second embodiment.

  As shown in FIG. 12, the U-phase output unit 2A, the V-phase output unit 3A, and the W-phase output unit 4A of the IPM 1A according to the second embodiment are configured such that the heat sink 14 is disposed outside the wiring board 13 and the high voltage unit 11 And the low voltage | pressure part 12 is arrange | positioned inside the wiring board 13. Also in the booster 6 </ b> A, the heat sink 54 is disposed outside the wiring board 53, and the booster circuit 51 is disposed inside the wiring board 53.

  In the IMP 1A of the second embodiment, the heat dissipation can be further improved by disposing the heat dissipation plate 14 and the heat dissipation plate 54 outside the rectangular parallelepiped. In this case, the heat sink 14 and the heat sink 54 may be provided with a heat sink, fins, or the like.

(Third embodiment)
Next, a third embodiment in which the first embodiment described above is partially changed will be described. In addition, the same code | symbol is attached | subjected to the structure similar to 1st Embodiment, and description is abbreviate | omitted. FIG. 13 is a diagram corresponding to FIG. 2 of the IPM according to the third embodiment.

  Like IPM1B shown in FIG. 13, the boosting unit may be omitted and the control unit 5B may be provided at the position of the boosting unit. Specifically, the case 23B is attached to the place where the boosting unit is disposed, and the heat insulating material 41 and the wiring substrate 42 provided with a gate drive (not shown) are sequentially stacked on the outside of the case 23B.

  In the IPM 1B according to the third embodiment, since the output units 2 to 4 and the control unit 5A of each phase are arranged on the side surface of the rectangular parallelepiped, the air permeability is improved. Thereby, cooling performance can be improved more.

(Fourth embodiment)
Next, a description will be given of a fourth embodiment in which the first embodiment is partially changed. In addition, the same code | symbol is attached | subjected to the structure similar to 1st Embodiment, and description is abbreviate | omitted. FIG. 14 is a cross-sectional view of an IPM according to the fourth embodiment. FIG. 15 is a diagram before the step of bending the IPM according to the fourth embodiment.

  As shown in FIG. 14, in the IPM 1C according to the fourth embodiment, the U-phase output unit 2C, the V-phase output unit 3C, and the W-phase output unit 4C are provided on different surfaces of one heat sink 14C bent in a Z shape. Has been placed. Moreover, the control part 5 is arrange | positioned at the end surface of 2 U of U-phase output parts.

  When assembling the IPM 1C according to the fourth embodiment, as shown in FIG. 15, a recess 14Ca extending in the direction perpendicular to the paper surface is formed in the heat radiating plate 14C so that the space between the output portions 2C to 4C is partially thinned. As an example of the thickness, when the thickness of the thick part of the heat sink 14 is about 3 mm, it is conceivable that the thickness of the recess 14Ca is about 1 mm to about 1.5 mm. And after installing each output part 2C-4C in 14 C of heat sinks, the heat sink 14C is shape | molded in Z shape by bending along the part of the recessed part 14Ca of 14 C of heat sinks.

  Thus, by arranging the output units 2C to 4C in a Z shape, not only the flat area but also the thickness (the distance between the U-phase output unit 2C and the W-phase output unit 4C) can be reduced. it can. Moreover, the number of parts can be reduced by arranging the output units 2C to 4C on one heat sink 14C. Further, by providing an interval between the W-phase output unit 4C and the control unit 5, air permeability can be improved and cooling performance can be improved.

(Fifth embodiment)
Next, a fifth embodiment in which the case and the bus bar of the first embodiment described above are changed will be described. In addition, the same code | symbol is attached | subjected to the structure similar to 1st Embodiment, and description is abbreviate | omitted. FIG. 16 is a perspective view of a case and a bus bar according to the fifth embodiment.

  In the fifth embodiment, two bus bars for power supply of adjacent phases that are separately configured in the first embodiment are integrated. Specifically, as shown in FIG. 16, the case 52 is integrally formed in a rectangular parallelepiped shape, and a P-side power supply bus bar 16 </ b> D and an N-side power supply bus bar 17 </ b> D are provided near the corners of the case 71. Are arranged adjacent to each other. That is, for example, the bus bar 16D of the U-phase output unit 2 is disposed at a position closer to the bus bar 17D of the V-phase output unit 3 in which current flows in the opposite direction than the bus bar 16D of the V-phase output unit 3 in which current flows in the same direction. Will be. The output bus bar 15 is arranged at the center of each side.

  As described above, in the adjacent output units 4 to 6, the parasitic inductances generated in the bus bar 16 </ b> D and the bus bar 17 </ b> D can be offset by causing the bus bars 16 </ b> D and 17 </ b> D having opposite current directions to be adjacent to each other.

(Sixth embodiment)
Next, a sixth embodiment in which the case and the bus bar of the first embodiment described above are changed will be described. In addition, the same code | symbol is attached | subjected to the structure similar to 1st Embodiment, and description is abbreviate | omitted. FIG. 17 is a perspective view of a case and a bus bar according to the sixth embodiment. 18 is a cross-sectional view taken along line XX in FIG.

  In the sixth embodiment, the two bus bars for supplying power, which are arranged at different corners in the fifth embodiment, are arranged at the same position. Specifically, as shown in FIG. 17 and FIG. 18, current flows in the opposite direction to the P-side power supply bus bar 16E for power supply, the insulating layer 73, and the bus bar 16E at two corners of the case 72. A flowing N-side power supply bus bar 17E is stacked. The adjacent output units 2 to 4 share the bus bars 16E and 17E. The lower bus bar 16E is configured to be longer than the upper bus bar 17E.

  By configuring in this way, the parasitic inductance generated in the bus bars 16E and 17E can be offset more. Moreover, since the number of bus bars 16E and 17E can be reduced by sharing the bus bars 16E and 17E, the number of parts can be reduced, and the parasitic inductance can also be reduced.

  As mentioned above, although this invention was demonstrated in detail using embodiment, this invention is not limited to embodiment described in this specification. The scope of the present invention is determined by the description of the claims and the scope equivalent to the description of the claims. Hereinafter, modified embodiments in which the above-described embodiment is partially modified will be described.

  For example, in the above-described embodiment, an example in which the present invention is applied to a three-phase IPM has been described. However, the present invention may be applied to a two-phase or four-phase or higher IPM. In particular, in the present invention, since it is configured three-dimensionally, an increase in the plane area can be suppressed even if the number of phases increases.

  In addition, the materials, numerical values, shapes, and the like applied in the above-described embodiments are examples, and can be changed as appropriate.

  In the above-described embodiment, the output units are arranged on the rectangular parallelepiped surface or in a Z shape, but may be arranged in other shapes. As an example, the high pressure part, the low pressure part, and the boosting part of each output part may be arranged on different side surfaces of the octagonal prism, and the control part may be arranged on the upper surface.

  In the above-described embodiment, the switching device and the diode which are semiconductor elements are arranged on one surface of the wiring board. However, the switching device and the diode which are semiconductor elements may be separately arranged on both surfaces.

  In the embodiment described above, the cooling unit is configured as an air cooling type, but the cooling unit may be configured as a water cooling type.

  In the above-described embodiment, one switching device is provided in each of the high-voltage part and the low-voltage part of each output unit. However, a plurality of switching devices may be connected in parallel to the high-voltage part and the low-voltage part of each output unit. .

1 is an overall perspective view of an IPM according to a first embodiment. It is sectional drawing along the II-II line in FIG. It is sectional drawing along the III-III line in FIG. It is a top view of a U-phase output part. It is sectional drawing along the VV line in FIG. It is a perspective view for demonstrating a switching device. It is a perspective view for demonstrating a diode. It is a schematic circuit diagram of IPM. It is a perspective view for demonstrating the assembly process of IPM. It is a perspective view for demonstrating the assembly process of IPM. It is a perspective view for demonstrating the assembly process of IPM. FIG. 3 is a diagram corresponding to FIG. 2 of an IPM according to a second embodiment. It is FIG. 2 equivalent figure of IPM by 3rd Embodiment. It is sectional drawing of IPM by 4th Embodiment. It is a figure before the bending process of IPM by 4th Embodiment. It is a perspective view of the case and bus bar by 5th Embodiment. It is a perspective view of the case and bus bar by 6th Embodiment. It is sectional drawing along the XX line in FIG.

Explanation of symbols

1, 1A, 1B, 1C IPM
2, 2A, 2C U-phase output unit 3, 3A, 3C V-phase output unit 4, 4A, 4C W-phase output unit 5, 5A, 5B Control unit 6, 6A Boosting unit 7 Cooling unit 11 High-pressure unit 12 Low-pressure unit 13 Wiring Substrate 14, 14C Heat sink 14Ca Recess 15-21, 16D, 16E, 17D, 17E Bus bar 22 Al wire 23, 23B Case 23a Window 23b Screw hole 23c Insertion hole 23d Recess 24 Protective gel 25 Cover 26 Screw 32, 36 Switching device 32g , 36g Gate 32s, 36s Source 32d, 36d Drain 33, 37 Diode 33a, 37a Anode 33k, 37k Cathode 34, 38 Al wiring 41 Heat insulating material 42 Wiring board 43-48 Gate drive 49 Hole 50 Al wiring 51 Boost circuit section 52 Al Wiring 53 Wiring board 54 Heat sink 55 Bus bar 61 Tubular member 62 Retirement fan 71 and 72 case 73 insulating layer

Claims (12)

A first output unit for outputting the first phase;
A second output unit that is arranged on a plane that intersects the plane on which the first output unit is arranged, and that outputs a second phase having a phase different from the first phase;
A semiconductor device comprising: a control unit that controls the output unit.   2. The semiconductor device according to claim 1, wherein the surface on which the first output unit is disposed and the surface on which the second output unit is disposed are different surfaces of a polyhedron.   3. The surface on which the control unit is arranged is any one of polyhedrons different from the surface on which the first output unit is arranged and the surface on which the second output unit is arranged. A semiconductor device according to 1. The first output unit and the second output unit include a heat sink,
4. The semiconductor device according to claim 2, wherein the first output unit and the second output unit are configured so that the heat radiating plate is located inside. 5. The first output unit and the second output unit include a heat sink,
4. The semiconductor device according to claim 2, wherein the first output unit and the second output unit are configured so that the heat radiating plate is located outside. 5.   2. The semiconductor device according to claim 1, wherein the surface on which the first output unit is disposed and the surface on which the second output unit is disposed are two different surfaces of the bent plate member.   The semiconductor device according to claim 1, wherein the first output unit is erected on the control unit. The first output unit includes a control bus bar for connecting to the control unit,
The semiconductor device according to claim 7, wherein the control bus bar is inserted through a hole formed in the control unit.   The said 1st output part and the said 2nd output part are equipped with the heat sink which conducts heat in the direction different from the direction where the said control part is arrange | positioned, The any one of Claims 1-8 characterized by the above-mentioned. 2. The semiconductor device according to claim 1. Each of the first output unit and the second output unit includes a first bus bar in which a current flows in a first direction, and a second bus bar in which a current flows in a second direction opposite to the first direction. With
The first bus bar of the first output unit is disposed closer to the second bus bar of the second output unit than the first bus bar of the second output unit. The semiconductor device according to claim 5. The first output unit and the second output unit share a first bus bar in which current flows in a first direction, and a second bus bar in which current flows in a second direction opposite to the first direction. Share
The semiconductor device according to claim 1, wherein the first bus bar and the second bus bar are stacked via an insulating member. The first output unit includes a plurality of semiconductor elements and a wiring board on which the semiconductor elements are provided,
The semiconductor device according to claim 1, wherein the plurality of semiconductor elements are arranged on both surfaces of the substrate.

Images