JP2009076845A5 - - Google Patents

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Publication number
JP2009076845A5
JP2009076845A5 JP2008073603A JP2008073603A JP2009076845A5 JP 2009076845 A5 JP2009076845 A5 JP 2009076845A5 JP 2008073603 A JP2008073603 A JP 2008073603A JP 2008073603 A JP2008073603 A JP 2008073603A JP 2009076845 A5 JP2009076845 A5 JP 2009076845A5
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JP
Japan
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Application number
JP2008073603A
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Japanese (ja)
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JP2009076845A (en
JP5487550B2 (en
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Priority to JP2008073603A priority Critical patent/JP5487550B2/en
Priority claimed from JP2008073603A external-priority patent/JP5487550B2/en
Priority to US12/199,323 priority patent/US7859021B2/en
Publication of JP2009076845A publication Critical patent/JP2009076845A/en
Publication of JP2009076845A5 publication Critical patent/JP2009076845A5/ja
Priority to US12/947,088 priority patent/US7985987B2/en
Application granted granted Critical
Publication of JP5487550B2 publication Critical patent/JP5487550B2/en
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JP2008073603A 2007-08-29 2008-03-21 Field effect semiconductor device and manufacturing method thereof Active JP5487550B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008073603A JP5487550B2 (en) 2007-08-29 2008-03-21 Field effect semiconductor device and manufacturing method thereof
US12/199,323 US7859021B2 (en) 2007-08-29 2008-08-27 Field-effect semiconductor device
US12/947,088 US7985987B2 (en) 2007-08-29 2010-11-16 Field-effect semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007222273 2007-08-29
JP2007222273 2007-08-29
JP2008073603A JP5487550B2 (en) 2007-08-29 2008-03-21 Field effect semiconductor device and manufacturing method thereof

Publications (3)

Publication Number Publication Date
JP2009076845A JP2009076845A (en) 2009-04-09
JP2009076845A5 true JP2009076845A5 (en) 2009-10-01
JP5487550B2 JP5487550B2 (en) 2014-05-07

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ID=40611498

Family Applications (1)

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JP2008073603A Active JP5487550B2 (en) 2007-08-29 2008-03-21 Field effect semiconductor device and manufacturing method thereof

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JP (1) JP5487550B2 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5582378B2 (en) * 2009-02-27 2014-09-03 サンケン電気株式会社 Field effect semiconductor device and manufacturing method thereof
JP2010267865A (en) * 2009-05-15 2010-11-25 Toyota Central R&D Labs Inc Solar cell, and method of manufacturing the same
JP4786730B2 (en) * 2009-05-28 2011-10-05 シャープ株式会社 Field effect transistor and manufacturing method thereof
US8390000B2 (en) * 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
JP5625336B2 (en) * 2009-11-30 2014-11-19 サンケン電気株式会社 Semiconductor device
JP5716737B2 (en) 2010-03-01 2015-05-13 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP5056883B2 (en) 2010-03-26 2012-10-24 サンケン電気株式会社 Semiconductor device
US8896122B2 (en) 2010-05-12 2014-11-25 Cree, Inc. Semiconductor devices having gates including oxidized nickel
GB2482308A (en) 2010-07-28 2012-02-01 Univ Sheffield Super junction silicon devices
JP5672868B2 (en) 2010-08-31 2015-02-18 富士通株式会社 Compound semiconductor device and manufacturing method thereof
KR102065115B1 (en) * 2010-11-05 2020-01-13 삼성전자주식회사 High Electron Mobility Transistor having E-mode and method of manufacturing the same
JP5810518B2 (en) 2010-12-03 2015-11-11 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP5724347B2 (en) 2010-12-10 2015-05-27 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP5775321B2 (en) 2011-02-17 2015-09-09 トランスフォーム・ジャパン株式会社 Semiconductor device, manufacturing method thereof, and power supply device
JP5913816B2 (en) 2011-02-21 2016-04-27 富士通株式会社 Manufacturing method of semiconductor device
JP2012178376A (en) * 2011-02-25 2012-09-13 Sanken Electric Co Ltd Semiconductor device and manufacturing method thereof
JP5782947B2 (en) 2011-09-15 2015-09-24 富士通株式会社 Semiconductor device and manufacturing method thereof, power supply device, and high-frequency amplifier
JP5896667B2 (en) 2011-09-26 2016-03-30 トランスフォーム・ジャパン株式会社 Compound semiconductor device and manufacturing method thereof
JP6231730B2 (en) 2011-09-28 2017-11-15 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP2013089673A (en) * 2011-10-14 2013-05-13 Toshiba Corp Semiconductor device and semiconductor device manufacturing method
KR101934851B1 (en) * 2011-12-07 2019-01-04 삼성전자주식회사 High electron mobility transistor
JP5932368B2 (en) * 2012-01-27 2016-06-08 トランスフォーム・ジャパン株式会社 Compound semiconductor device and manufacturing method thereof
KR101920715B1 (en) * 2012-03-06 2018-11-21 삼성전자주식회사 High Electron Mobility Transistor and method of manufacturing the same
JP5950643B2 (en) 2012-03-19 2016-07-13 トランスフォーム・ジャパン株式会社 Compound semiconductor device and manufacturing method thereof
JP5902010B2 (en) 2012-03-19 2016-04-13 トランスフォーム・ジャパン株式会社 Compound semiconductor device and manufacturing method thereof
JP6145895B2 (en) * 2012-08-03 2017-06-14 パナソニックＩｐマネジメント株式会社 Nitride semiconductor device and method for manufacturing nitride semiconductor device
JP6087552B2 (en) 2012-09-21 2017-03-01 トランスフォーム・ジャパン株式会社 Compound semiconductor device and manufacturing method thereof
JP6017248B2 (en) 2012-09-28 2016-10-26 トランスフォーム・ジャパン株式会社 Semiconductor device manufacturing method and semiconductor device
JP2014072426A (en) 2012-09-28 2014-04-21 Fujitsu Ltd Semiconductor device and semiconductor device manufacturing method
KR20140066015A (en) 2012-11-22 2014-05-30 삼성전자주식회사 Hetero junction field effect transistor and method for manufacturing the same
JP5949527B2 (en) 2012-12-21 2016-07-06 富士通株式会社 Semiconductor device and manufacturing method thereof, power supply device, and high-frequency amplifier
JP6565376B2 (en) 2014-10-29 2019-08-28 サンケン電気株式会社 Semiconductor device
JP6631950B2 (en) 2014-12-11 2020-01-15 パナソニックＩｐマネジメント株式会社 Nitride semiconductor device and method of manufacturing nitride semiconductor device
JP6631160B2 (en) * 2015-10-29 2020-01-15 富士通株式会社 Semiconductor device, power supply device, high frequency amplifier
JP7047615B2 (en) * 2018-06-13 2022-04-05 住友電工デバイス・イノベーション株式会社 Manufacturing method of semiconductor device
CN111755510B (en) * 2019-03-26 2024-04-12 苏州捷芯威半导体有限公司 Semiconductor device and preparation method thereof
WO2023181749A1 (en) * 2022-03-25 2023-09-28 ヌヴォトンテクノロジージャパン株式会社 Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002170990A (en) * 2000-12-04 2002-06-14 Nippon Telegr & Teleph Corp <Ntt> Method for forming p type ohmic junction to nitride semiconductor
US8174048B2 (en) * 2004-01-23 2012-05-08 International Rectifier Corporation III-nitride current control device and method of manufacture
JP4705482B2 (en) * 2006-01-27 2011-06-22 パナソニック株式会社 Transistor

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