JP2009076714A - Manufacturing method of thin film solar cell - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film solar cell in which accurate positioning and laser processing of a patterning line can be performed. <P>SOLUTION: In the manufacturing method of the thin film solar cell wherein while a flexible insulating long-sized substrate having a layer of a photoelectric converting device formed on a top surface and a connection electrode layer formed on a reverse surface is conveyed in an in-line manner and positioned on a processing stage, patterning is carried out through laser processing to separate the photoelectric converting device and connection electrode layer into a plurality of unit portions at mutually shifting positions, reference markers are preformed on the substrate at prescribed pitches and while the substrate is conveyed in the in-line manner and positioned on the processing stage, position coordinates of the reference markers are detected from an image picked up through an optical system for laser processing to determine patterning positions on the basis of the position coordinates. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a thin-film solar cell including a plurality of unit photoelectric conversion elements (or unit cells) connected in series on an electrically insulating substrate, and more specifically, photoelectric conversion laminated on a flexible substrate. The present invention relates to a thin film pattern forming method for separating a thin film of an element and a connection electrode layer into a plurality of unit portions by laser processing.

  Currently, clean energy research and development is underway from the standpoint of environmental protection. Among them, solar cells are attracting attention because their resources (sunlight) are infinite and pollution-free. A typical example of a solar cell (photoelectric conversion device) in which a plurality of photoelectric conversion elements formed on the same substrate are connected in series is a thin film solar cell.

  Thin-film solar cells are expected to become the mainstream of solar cells in the future because they are thin and lightweight, inexpensive to manufacture, and easy to increase in area, and are attached to building roofs and windows in addition to power supply. Demand is also expanding for business use and general residential use. Conventional thin film solar cells generally use a glass substrate. In recent years, research and development of flexible solar cells using plastic films have been promoted and put into practical use in terms of weight reduction, workability, and mass productivity. Furthermore, the thing using the film substrate which carried out the insulation coating to the flexible metal material is also developed. Taking advantage of this flexibility, mass production is possible with roll-to-roll and stepping roll manufacturing methods that perform film formation and patterning while continuously or intermittently in-line transporting the substrate between the supply roll and take-up roll. It has become possible.

  FIG. 8 is a schematic perspective view showing a schematic configuration of a thin film solar cell. In the drawing, the thin film solar cell has a first electrode layer 64, a thin film on the surface of a flexible insulating substrate (hereinafter referred to as a substrate) 60. A photoelectric conversion layer 65 made of a semiconductor layer and a transparent electrode layer (also referred to as a second electrode layer) 61 are sequentially stacked to form a photoelectric conversion element 62, while a third electrode layer and a fourth electrode are formed on the back surface of the substrate 60. A connection electrode layer 63 made of an electrode layer is formed, current collection holes 67 are formed in the formation region of the transparent electrode layer 61 with a predetermined interval, and a predetermined interval is formed in the non-formation region of the transparent electrode layer 61. Thus, a connection hole 68 is formed.

  The current collection hole 67 and the connection hole 68 are arranged so as to be shifted from each other, and the photoelectric conversion element 62 and the connection electrode layer 63 are separated into a plurality of unit portions at positions shifted from each other, thereby performing unit photoelectric conversion. A thin film solar cell in which elements (also referred to as unit cells) 62 are connected in series with each other through current collecting holes 67, unit portions of connection electrode layer 63, and connection holes 68 is formed. Thereby, the current generated in the photoelectric conversion layer 65 of the unit photoelectric conversion element is collected in the transparent electrode layer 61, flows to the connection electrode layer 63 on the back surface through the current collection holes 67, and is adjacent to the unit through the connection holes 68. The light is guided to the first electrode layer 64 of the photoelectric conversion element 62.

  By repeating this, between the first electrode layer 64 of the photoelectric conversion element 62 on one end side of each unit photoelectric conversion element 62 connected in series and the transparent electrode layer 61 of the photoelectric conversion element 62 on the other end side, Necessary voltage can be output. For example, in order to obtain an alternating current of 100 V as a commercial power source by alternating current with an inverter, a voltage of 100 V or higher is required, and actually several tens or more elements are connected in series. Such a photoelectric conversion element and its series connection are formed by forming an electrode layer and a photoelectric conversion layer, patterning each layer, and a combination procedure thereof.

  The configuration and manufacturing method of the solar cell are described in, for example, Patent Documents 1 to 3. According to these, first, after forming the connection hole 68 at a predetermined position of the substrate 60, the first electrode layer 64 is formed on the surface of the substrate 60, and the third electrode layer (not shown) is formed on the back surface, respectively. Thereafter, a current collection hole 67 is formed at a predetermined position of the substrate 60 through the first electrode layer 64 and the third electrode layer.

  Next, the first electrode layer 64 formed on the surface of the substrate 60 is removed linearly with a width of about 0.4 mm by laser processing to form primary pattern lines, and individual single regions (electrodes) are formed. A plurality of primary patterning areas are formed. A photoelectric conversion layer 65 made of a semiconductor layer and a transparent electrode layer 61 are sequentially formed thereon, and then the transparent electrode layer 61 and the photoelectric conversion layer 65 on the primary patterning line are formed into a width of about 0.1 mm by laser processing. Then, the secondary patterning line is processed by removing it again in a straight line. Thereby, the photoelectric conversion element 62 including the first electrode layer 64, the photoelectric conversion layer 65, and the transparent electrode layer 61 is separated into a plurality of unit units.

  Next, after forming a fourth electrode layer (not shown) on the third electrode layer (not shown) on the back side and forming the connection electrode layer 63, the connection electrode layer 63 composed of the third electrode layer and the fourth electrode layer is formed. The unit photoelectric conversion element 62 is linearly removed with a width of about 0.4 mm by laser processing at a position shifted from the separation position. Thereby, the connection electrode layer 63 is separated into a plurality of unit units, and the series connection of the thin film solar cells described above is completed. Patterning may be performed by a sandblast method or a mechanical cutter.

  FIG. 9 is a schematic configuration diagram showing an example of a laser processing apparatus for forming a pattern of a thin film solar cell. The film substrate 1 is intermittently conveyed between the unwinding roll 2 and the winding roll 3 and sequentially processed. The Marker holes are formed on the side of the film substrate 1 at a constant pitch along the transport direction, and when the positioning sensor 5 detects the marker holes, the film substrate 1 is in contact with the processing stage 6. It stops at a predetermined position and is fixed to the processing stage 6 by suction.

  Below the processing stage 6, a processing optical unit 7 mounted on the XY stage 8 is disposed. This processing optical unit 7 is controlled by an XY stage controller 9 so that the mechanical origin of the XY stage 8 is controlled. As a reference, the film substrate 1 is patterned by irradiating laser light while moving according to a preset pattern.

Japanese Patent Laid-Open No. 10-233517 JP 2000-77690 A Japanese Patent Application No. 11-19306

  The pattern forming method of the thin film solar cell is performed between the positioning of the processing optical unit 7 with respect to the mechanical origin of the XY stage 8 and the transfer positioning of the film substrate 1 using the positioning sensor 5 and the transfer marker hole. An error occurred. Therefore, in the primary patterning of the first electrode layer and the patterning of the connection electrode layer, the relative positional accuracy with the connection hole and the current collection hole formed in the previous step cannot be obtained, and the characteristics of the thin film solar cell are deteriorated due to a short circuit. There was a problem.

  In order to form the unit photoelectric conversion element, as described above, it is necessary to form a secondary patterning line so as to overlap the primary patterning line. However, due to the positioning error as described above, the secondary patterning line is formed. The line straddles the primary patterning line, processed through the transparent electrode layer (second electrode layer) and the photoelectric conversion layer as well as the first electrode layer, and through the photoelectric conversion layer whose resistance has been reduced by the heat effect of the laser. The transparent electrode layer (second electrode layer) and the first electrode layer are electrically connected, and similarly, there is a possibility that the characteristics of the thin-film solar cell are deteriorated due to a short circuit.

  The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a method for manufacturing a thin film solar cell capable of accurately aligning a patterning line and performing laser processing.

In order to solve the above problems, the present invention provides:
A photoelectric conversion element formed by sequentially laminating a first electrode layer, a photoelectric conversion layer composed of a thin film semiconductor layer, and a transparent electrode layer is formed on the surface of a flexible insulating long substrate, and a connection electrode layer is formed on the back surface of the substrate. Current collector holes are formed in the formation area of the transparent electrode layer with a predetermined interval, and connection holes are formed in the non-formation area of the transparent electrode layer with a predetermined interval. In such a state that such a substrate is conveyed in-line and positioned on the processing stage, patterning is performed by irradiating the photoelectric conversion element and the connection electrode layer with laser light, and the photoelectric conversion element and the connection The electrode layer is separated into a plurality of unit portions at positions shifted from each other, and each unit portion of the photoelectric conversion element is mutually connected via the current collecting hole, the unit portion of the connection electrode layer, and the connection hole. Thin film solar cells connected in series In the method for manufacturing a thin-film solar cell to obtain,
Position coordinates of the reference marker from an image acquired through an optical system for laser processing in a state where the reference marker is formed on the substrate in advance at a predetermined pitch, and the substrate is conveyed in-line and positioned on the processing stage. And patterning positions are determined based on the position coordinates.

  Since the present invention employs the above method, the patterning position of laser processing is determined based on the position coordinates of a reference marker formed in advance on the substrate, so that it is independent of the positioning accuracy of the substrate conveyed in-line. High-precision patterning can be performed, and the processing position accuracy of the patterning line can be improved. Thereby, the characteristic fall of the thin film solar cell by the short circuit etc. resulting from the conveyance positioning error of the board | substrate with respect to a laser processing optical system can be prevented.

  Further, in the present invention, when two or more reference markers are formed in a one-step processing section of the substrate, the two or more reference markers are positioned in a state where the substrate is positioned on the processing stage. By detecting the position coordinates of the substrate and determining the patterning position based on the position coordinates, the substrate processing direction of the substrate transported inline and the width direction orthogonal to the transport direction are determined with respect to the laser processing optical system that performs patterning. In addition to positioning, angle correction can be performed, and the processing position accuracy of the patterning line can be further improved.

  In the present invention, by using a marker for positioning the substrate on the processing stage as the reference marker, which is positioned on the processing stage at the time of positioning and does not participate in positioning in the processing step. Further, the influence of the error between the positioning marker and the reference marker on the processing stage can be eliminated, the processing position accuracy of the patterning line can be further improved, and the manufacturing cost can be reduced as compared with the case where a separate reference marker is provided.

  In the present invention, in the aspect in which the current collecting hole or the connection hole is used as the reference marker, it is based on the position coordinates of the current collecting hole or the connection hole which is close to the processing position of the substrate and regularly distributed over the entire processing range. Thus, the patterning position can be determined or corrected, and the processing position accuracy of the patterning line can be further improved. Further, the manufacturing cost can be reduced as compared with the case where a separate reference marker is provided.

  In the present invention, after the primary patterning line is processed on the substrate, the secondary patterning line is formed at the same position as the primary patterning line or at a predetermined interval. In the mode in which the line is used as a reference marker, the secondary patterning line is processed based on the actual primary patterning line itself, so that it is possible to eliminate the influence of errors related to the substrate transport positioning and further improve the processing position accuracy of the patterning line. It can be improved. Further, the manufacturing cost can be reduced as compared with the case where a separate reference marker is provided.

  In the present invention, in the aspect in which the intersection coordinates of the primary patterning line are detected and the patterning position is determined based on the intersection coordinates, a highly accurate machining position correction and angle correction are performed by detecting relatively few reference coordinates. Therefore, the processing position accuracy of the patterning line can be further improved.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic configuration diagram showing an example of a laser processing apparatus for carrying out the method of the present invention. Since the basic configuration of the laser processing apparatus is the same as that of the conventional apparatus shown in FIG. 9, common portions are denoted by the same reference numerals.

  In the processing apparatus of FIG. 1, the film substrate 1 is supplied from an unwinding roll 2, intermittently conveyed to a processing stage 6 by a feed roller (not shown), patterned on the processing stage 6, and then wound on a winding roll 3. Taken. Marker holes 4 are formed on the side of the film substrate 1 at a constant pitch along the conveying direction (see FIGS. 2 to 6), and the marker holes 4 are arranged on the front side of the processing stage 6. When the positioning sensor 5 detects the film substrate 1, the film substrate 1 is stopped at a predetermined position with respect to the processing stage 6, and then sucked and fixed to the processing stage 6.

  Below the processing stage 6, there is disposed a processing optical unit 7 mounted on the XY stage 8 and movable in the X direction (substrate transport direction) and the Y direction (substrate width direction). The processing optical unit 7 performs patterning of the film substrate 1 by irradiating the laser beam while moving according to a preset pattern with the mechanical origin of the XY stage 8 as a reference under the control of the XY stage controller 9.

  That is, the laser beam 11 output from the laser oscillator 10 enters the incident optical system 13 in the processing optical unit 7 through the fiber optical system 12. The laser beam 11 exiting the incident optical system 13 is turned back in the direction of the processing stage 6 by a dichroic mirror 14 (half mirror) that reflects only a specific wavelength, and then the focus is adjusted on the thin film on the film substrate 1 by the output optical system 15. Then, the film substrate 1 is irradiated.

  In addition, a CCD camera is fixed below the dichroic mirror 14 in the processing optical unit 7 as an image pickup means 16 for capturing an image of the processed portion so that the laser beam 11 and the optical axis are aligned. After being processed by the image processing unit 17, it is sent to the controller 9 as a position signal. The image processing method for detecting the position coordinates of the reference marker from the acquired image is not particularly limited, and various image processing methods can be used.

  For example, as will be described later, when a through hole is used as a reference marker, in a binary image binarized at an appropriate threshold level, the reference marker (circle) is checked by collating with image data of the reference marker stored in advance. What is necessary is just to recognize an image and acquire the center coordinate. When the primary patterning line is used as a reference marker, a band-like detection area is set in the image, and the center coordinates of the line may be obtained from the luminance distribution or the binary image. When the intersection of the lines is used as a reference marker, the band-shaped detection area is set corresponding to both the X direction and the Y direction, or the center coordinates are acquired by image recognition. In each of these cases, illumination means for illuminating the surface of the film substrate 1 to be imaged may be used in combination. In addition, when the through hole is used as a reference marker and the transparency of the film substrate is high, a reference marker is provided in an area where any of the metal electrode layers is formed or extended to the periphery of the reference marker. A film may be formed.

  FIG. 2 shows a case where a marker hole 4 ′ for positioning the film substrate 1 on the processing stage 6 is used as the reference marker H. The marker hole 4 'used as the reference marker H is different from the marker hole 4 positioned in the positioning sensor 5 and is not used for positioning in the processing step (for example, used for positioning in the immediately preceding processing step). Marker hole), which is located at a specific position with respect to the primary patterning area 21 within a range where it is adsorbed and fixed to the processing stage 6.

  As a pre-processing alignment procedure, first, the processing optical unit 7 is moved to the reference marker H ′ in the coordinate system of the XY stage 8, and this portion is picked up by the image pickup means 16 to obtain an actual image processing. The position coordinate H of the reference marker H (marker hole 4 ') is obtained. Next, the processing optical unit 7 (H ′) is moved to the position coordinate H, and the primary patterning disposed at a specific position with respect to the reference marker H (marker hole 4 ′) with the position coordinate H as the origin. By patterning the area 21, an error between the transport system of the film substrate 1 and the processing optical unit 7 is corrected.

  In the processing position correction, it is assumed that the film substrate 1 has no angle error, and the position correction in the transport direction X and the width direction Y is performed using the reference marker H as a reference. However, there may be an angle error in the film substrate 1 due to conveyance or distortion of the film substrate 1. Therefore, as shown in FIG. 3 (the angle error is exaggerated for easy understanding), it is advantageous to set two reference markers H1 and H2 and perform angle correction based on them. That is, the position coordinates of the first reference marker H1 with the processing origin based on the image V1 and the position coordinates of the second reference marker H2 at a specific position with respect to the reference marker H1 are obtained from the image V2, and these Based on the position / angle correction. In the illustrated example, the position coordinates (x−) of the second reference marker H2 from the image V2 at the position H2 ′ having a distance D behind the transport direction X with respect to the position coordinates (x, y) of the reference marker H1. D + dx, y + dy) is shown. However, the positional relationship between the two reference markers H1 and H2 is not limited to this, and the two reference markers H1 and H2 are positioned apart from each other in the width direction Y, or in the transport direction X and the width direction Y. It may be located far away.

Example 1
FIG. 4 shows an example in which positioning is performed using a connection hole or a current collecting hole (hereinafter referred to as a through hole) as a reference marker. In FIG. 4, as an alignment procedure before processing, first, among the plurality of through holes drilled in the film substrate 1, the imaging means 16 is moved to the vicinity of the designated through hole Hs and the position coordinate Hs is obtained by image processing. Similarly, it is moved to the vicinity of the through hole He and the position coordinate He is obtained by image processing. Based on the alignment data of the through-hole position coordinates Hs and He, position / angle correction is performed for the deviation between the coordinate system of the XY stage 8 and the coordinate system of the through-holes Hs and He, and the first electrode layer or the connection electrode layer The patterning line is processed. In this case, the position and angle can be corrected based on the position coordinates of the through holes that are close to the patterning line of the film substrate 1 and regularly distributed over the entire processing range, which is advantageous for improving the processing position accuracy of the patterning line. .

(Example 2)
FIG. 5 shows an example in which positioning is performed during processing of the secondary patterning line 201 using the primary patterning line as a reference marker. 5, the secondary patterning line 201 is formed at the same position as the primary patterning line 101 on the film substrate 1 or at a position (parallel position) having a constant interval on the film substrate 1 in FIG. As an alignment procedure before processing, first, the imaging unit 16 is moved to the vicinity of the designated intersection AR among the plurality of primary patterning lines 101 formed in the primary patterning area 21, and the intersection coordinates AR are obtained by image processing. . Similarly, it is moved to the vicinity of the intersection point AL, and the intersection point coordinate AL is obtained by image processing.

  Based on the alignment data of the intersection coordinates AR and the intersection coordinates AL, the position / angle is corrected for the deviation between the coordinate system of the XY stage 8 and the coordinate system of the primary patterning area 21. The position / angle correction data at this time is data common to all primary patterning lines formed in the primary patterning area 21.

  Next, when actually processing the secondary patterning line 201 so as to overlap with the primary patterning line 101, first, on the premise of the position / angle correction data, first, the imaging unit 16 is located near the intersection A1 of the primary patterning line 101. Is moved and image processing is performed to obtain the intersection coordinate A1, and after the processing position of the secondary patterning line 201 relative to the primary patterning line 101 is recognized, the controller 9 controls the XY stage 8 and the laser oscillator 10 to perform secondary patterning. Line 201 is processed. Similarly, image processing and processing are repeated to process a plurality of secondary patterning lines 201 on the film substrate 1.

(Example 3)
FIG. 6 shows an example in which positioning is performed for each primary patterning line or for each predetermined region using the primary patterning line as a reference marker. In FIG. 6, as a pre-processing alignment procedure for forming the secondary patterning line 201 at the same position as the primary patterning line 101 on the film substrate or at a fixed interval using the laser processing apparatus of FIG. The imaging means 16 is moved to the vicinity of the intersection A1R of the plurality of primary patterning lines 101 formed in the primary patterning area 21, and the intersection point coordinate A1R is obtained by image processing. Find A1L.

  Based on the alignment data of the intersection point coordinates A1R and the intersection point coordinates A1L, the angle correction is performed for the deviation between the coordinate system of the XY stage 8 and the coordinate system of the primary patterning line 101. In this case, at the same time as the correction, the coordinate data of the intersection coordinates A1R and A1L also serves as the secondary patterning line processing position data, and therefore, the intersection coordinates for processing the secondary patterning line 201 so as to overlap the primary patterning line 101. Therefore, the operation for detecting the machining position is not required.

  Based on the alignment result, the controller 9 controls the XY stage 8 and the laser oscillator 10 to process the secondary patterning line 201. Similarly, image processing and processing of adjacent primary patterning lines are repeated to process all the secondary patterning lines 201 on the film substrate 1.

  Thus, by obtaining at least two or more intersection coordinates of the primary patterning line 101 designated for each primary patterning line 101 or for each predetermined region, and processing the secondary patterning line 201 based on them, the film is obtained. Even when the substrate 1 is distorted depending on heat treatment or film forming conditions, the overlay accuracy of the secondary patterning line 201 can be improved. Further, the image processing time can be shortened by performing angle correction and processing position recognition based on the intersection coordinates.

  In each of the above-described embodiments, the case where the angle correction and the processing position detection of the secondary patterning line 201 are performed using an XY stage type laser processing apparatus has been shown. The same can be done when patterning is performed using a scanning laser processing apparatus. FIG. 7 is a schematic configuration diagram showing an example of a galvano scanning type laser processing apparatus for carrying out the method of the present invention. Components common to the XY stage type laser processing apparatus shown in FIG. The description is omitted.

  In FIG. 7, a laser optical system for irradiating the film substrate 1 positioned on the processing stage 6 with a laser is provided below the processing stage 6. The laser optical system includes a laser oscillator 20 and an attenuation. And a controller 22, a focus adjustment unit 23, a galvano scan mirror 25, a controller 29, and the like. The galvano scan mirror 25 is composed of a pair of reflecting mirrors (galvano mirrors) each corresponding to scanning in the X-Y direction on the processing surface, and a rotary drive mechanism such as a servo motor for rotating them. The light emitted from the oscillator 20 is reflected and guided to the processing stage 6, and the reflection angle is changed to scan the laser light at high speed in the XY direction on the film substrate 1 disposed on the processing stage 6. Is possible.

  In addition, a dichroic mirror 24 (beam splitter) is provided between the laser oscillator 20 and the galvano scan mirror 25 to transmit the wavelength of the laser light and reflect light of other wavelengths, and the reflected light from the dichroic mirror 24. The imaging means 26 is provided along the optical axis. As the imaging means 26, a CCD camera or the like can be used, and one or a plurality of reference markers on the film substrate 1 can be imaged via the dichroic mirror 24 and the galvano scan mirror 25, and the acquired image The signal is processed by the image processing unit 27 and sent to the controller 29 as a processing position detection and angle correction signal.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, In addition to the above, various deformation | transformation and a change are further possible based on the technical idea of this invention. I will add that.

It is a schematic block diagram which shows an example of the laser processing apparatus which enforces the method of this invention. It is a schematic diagram which shows the example of a detection of the position coordinate of a reference | standard marker. It is a schematic diagram which shows the example which performs angle correction by the position coordinate of two reference markers. It is a schematic diagram which shows the example of a processing position detection when a connection hole is used as a reference marker. It is a schematic diagram which shows the example of a processing position detection when a primary patterning line is used as a reference marker. It is a schematic diagram showing an example of processing position detection in the case where positioning is performed for each primary patterning line or for each fixed region using the primary patterning line as a reference marker. It is a schematic block diagram which shows the other example of the laser processing apparatus which enforces this invention method. It is a typical perspective view which shows schematic structure of a thin film solar cell. It is a schematic block diagram which shows the conventional laser processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Film substrate 2 Unwinding roll 3 Winding roll 4 Marker hole 5 Positioning sensor 6 Processing stage 7 Processing optical unit 8 XY stage 9, 29 Control controller 10, 20 Laser oscillator 11 Laser light 12 Fiber optical system 13 Incident optical system 14, 24 Dichroic mirror (half mirror)
DESCRIPTION OF SYMBOLS 15 Output optical system 16, 26 Imaging means 17, 27 Image processing unit 22 Attenuator 23 Focus adjustment unit 25 Galvano scan mirror 60 Substrate 61 Transparent electrode layer 62 Photoelectric conversion element 63 Connection electrode layer 64 First electrode layer 65 Photoelectric conversion layer 67 Current collecting hole (through hole)
68 Connection hole (through hole)
101 Primary patterning line 201 Secondary patterning line A1, A1R, A1L, AR, AL Intersection H, H1, H2 Reference marker Hs, He Through hole (reference marker)

Claims (6)

A photoelectric conversion element formed by sequentially laminating a first electrode layer, a photoelectric conversion layer composed of a thin film semiconductor layer, and a transparent electrode layer is formed on the surface of a flexible insulating long substrate, and a connection electrode layer is formed on the back surface of the substrate. Current collector holes are formed in the formation area of the transparent electrode layer with a predetermined interval, and connection holes are formed in the non-formation area of the transparent electrode layer with a predetermined interval. In such a state that such a substrate is conveyed in-line and positioned on the processing stage, patterning is performed by irradiating the photoelectric conversion element and the connection electrode layer with laser light, and the photoelectric conversion element and the connection The electrode layer is separated into a plurality of unit portions at positions shifted from each other, and each unit portion of the photoelectric conversion element is mutually connected via the current collecting hole, the unit portion of the connection electrode layer, and the connection hole. Thin film solar cells connected in series In the method for manufacturing a thin-film solar cell to obtain,
Position coordinates of the reference marker from an image acquired through an optical system for laser processing in a state where the reference marker is formed on the substrate in advance at a predetermined pitch, and the substrate is conveyed in-line and positioned on the processing stage. , And a patterning position is determined based on the position coordinates.   When two or more reference markers are formed in a processing section of one step of the substrate, position coordinates of two or more reference markers are detected in a state where the substrate is positioned on the processing stage. 2. The method of manufacturing a thin film solar cell according to claim 1, wherein a patterning position is determined based on the position coordinates.   The marker for positioning the substrate on the processing stage is used as the reference marker, which is positioned on the processing stage at the time of positioning and does not participate in positioning in the processing step. Item 3. The method for producing a thin-film solar cell according to Item 1 or 2.   The method for manufacturing a thin-film solar cell according to claim 1, wherein the current collection hole or the connection hole is used as the reference marker.   After processing a primary patterning line on the substrate, when forming a secondary patterning line at the same position as the primary patterning line or at a predetermined interval, the primary patterning line is used as a reference marker. The method for producing a thin-film solar cell according to claim 1 or 2, wherein:   6. The method of manufacturing a thin-film solar cell according to claim 5, wherein an intersection point coordinate of the primary patterning line is detected and a patterning position is determined based on the intersection point coordinate.

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