JP2009071132A - Method for manufacturing multilayer wiring board - Google Patents

Method for manufacturing multilayer wiring board Download PDF

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JP2009071132A
JP2009071132A JP2007239361A JP2007239361A JP2009071132A JP 2009071132 A JP2009071132 A JP 2009071132A JP 2007239361 A JP2007239361 A JP 2007239361A JP 2007239361 A JP2007239361 A JP 2007239361A JP 2009071132 A JP2009071132 A JP 2009071132A
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plating
via hole
layer
metal foil
hole
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JP5051443B2 (en
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Nobuyuki Yoshida
信之 吉田
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Lincstech Circuit Co Ltd
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Hitachi AIC Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem wherein in a multilayer wiring board manufacturing, resist residues in unwanted parts sometimes prevent electrolytic plating formation, especially in a via hole, when the formation of an upper-layer wiring layer and the hole-filling of the via hole are performed by electrolytic plating by arranging a plating resist for upper-layer wiring, after the non-electrolytic plating of a front-end in a multilayer wiring board manufacturing method for laminating and integrating prepreg and metal foil, arranged on the upper layer of the prepreg, with an internal layer material formed by circuit, arranging the via hole by laser after patterning the metallic foil in a hole shape, and performing the formation of the upper layer wiring layer and the hole filling of the via hole by electrolytic plating. <P>SOLUTION: Plating is performed with an electrolytic filler plating liquid, after performing the non-electrolytic plating of the front-end and also before arranging the plating resist for the upper layer wiring, and then hole filling is performed in the via hole through electrolytic plating. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、多層配線基板の製造方法に関するものである。特に、フィルドめっき前処理方法に関するものである。   The present invention relates to a method for manufacturing a multilayer wiring board. In particular, it relates to a pretreatment method for filled plating.

従来、多層配線基板を製造するのに、銅箔付プリプレグ構成のものが提案されていて、銅箔の薄さから微細配線を形成することが可能となり、高配線密度化、薄膜化、小型化を図ることができる。一方、上下の導体配線層を接続するビアホールは、エキシマーレーザやYAG第3高調波、第4高調波を用いたレーザ加工機の導入が盛んになり、微小径のビアホール形成が容易になってきている。
そして、これらを応用して、回路形成した内層材にプリプレグとその上層に金属箔とを積層一体化し、レーザーによりビアホールを設けて、下地無電解めっきの後、電解めっきで前記ビアホールの穴埋めする多層配線基板の製造方法が盛んに行われている(特許文献1)。
特開2003−318544号公報
Conventionally, a prepreg structure with a copper foil has been proposed for manufacturing a multilayer wiring board, and it becomes possible to form fine wiring from the thin copper foil, which leads to higher wiring density, thinner film, and smaller size. Can be achieved. On the other hand, for via holes connecting upper and lower conductor wiring layers, excimer lasers and laser processing machines using third and fourth harmonics of YAG have been actively introduced, and formation of minute diameter via holes has become easier. Yes.
Then, by applying these, a prepreg and a metal foil are laminated and integrated on the inner layer material on which the circuit is formed, a via hole is provided by a laser, and after the base electroless plating, the via hole is filled by electrolytic plating The manufacturing method of a wiring board is performed actively (patent document 1).
JP 2003-318544 A

解決しようとする問題点は、回路形成した内層材にプリプレグとその上層に金属箔とを積層一体化し、その金属箔を穴形状にパターニングした後ビアホール用の穴を設けて、下地無電解めっき後に、上層配線用にめっきレジストを設けてから、電解めっきで上層配線層の形成と前記ビアホールの穴埋めする場合、不要部分のめっきレジスト残さが、特に前記ビアホール内の上記電解めっき形成を阻害してしまう場合がある。 本発明は、めっきレジスト残さの悪影響を取り除いて、電解めっきで上層配線層の形成と前記ビアホールの穴埋めする多層配線基板の製造方法を提供することを目的としている。
The problem to be solved is that after the prepreg and the metal foil are laminated and integrated on the inner layer material on which the circuit is formed, the metal foil is patterned into a hole shape, and then a hole for a via hole is provided, after the base electroless plating When the upper layer wiring layer is formed by electrolytic plating after the plating resist is provided for the upper layer wiring and the via hole is filled, an unnecessary portion of the plating resist residue particularly disturbs the formation of the electrolytic plating in the via hole. There is a case. An object of the present invention is to provide a method for manufacturing a multilayer wiring board that eliminates the adverse effects of plating resist residue and forms an upper wiring layer and fills the via hole by electrolytic plating.

本発明は、回路形成した内層材にプリプレグとその上層に金属箔とを積層一体化し、その金属箔を穴形状にパターニングした後ビアホール用の穴を設けて、下地無電解めっきし、上層配線用にめっきレジストを設けてから、電解めっきで上層配線層の形成と前記ビアホールの穴埋めする多層配線基板の製造方法にあたって、上記下地無電解めっき後で上記上層配線用のめっきレジストを設ける前に、電解フィルドめっき液によるめっきをする多層配線基板の製造方法を提供することである。
In the present invention, a prepreg and a metal foil are laminated and integrated on an inner layer material on which a circuit is formed, the metal foil is patterned into a hole shape, holes for via holes are provided, base electroless plating is performed, and upper layer wiring is used. In the method of manufacturing a multilayer wiring board in which an upper wiring layer is formed by electrolytic plating and the via hole is filled, electrolytic plating is performed before providing the upper layer wiring plating resist after the base electroless plating. It is an object of the present invention to provide a method for manufacturing a multilayer wiring board for plating with a filled plating solution.

本発明の方法は、回路形成した内層材にプリプレグとその上層に金属箔とを積層一体化し、その金属箔を穴形状にパターニングした後ビアホールを設けて、下地無電解めっきし、上層配線用にめっきレジストを設けたのち、電解めっきで上層配線層の形成と前記ビアホールの穴埋めする多層配線基板の製造方法にあたって、下地無電解めっき後で上層配線用のめっきレジストを設ける前に、電解フィルドめっき液によるめっきをするので、穴の底面が上昇し、穴内にめっきレジスト残さが残り難くなるので、電解めっきでビアホールの穴埋めが形成されないような不良が発生しにくい。また、電解フィルドめっき液によるめっきにより穴の底面が上昇する割には上層面上にはこのめっきがつかないので、最後にエッチングにより上層配線層を形成させるのが容易となる。
In the method of the present invention, a prepreg and a metal foil are laminated and integrated on an inner layer material on which a circuit is formed, and the metal foil is patterned into a hole shape. After the plating resist is provided, in the method of manufacturing the multilayer wiring board in which the upper wiring layer is formed by electrolytic plating and the via hole is filled, before the plating resist for the upper wiring is provided after the base electroless plating, the electrolytic filled plating solution Since the bottom of the hole rises and the plating resist residue does not easily remain in the hole, it is difficult to cause a defect that a via hole is not filled by electrolytic plating. Further, since the bottom surface of the hole is raised by plating with the electrolytic filled plating solution, this plating is not applied on the upper layer surface, so that it is easy to finally form the upper wiring layer by etching.

本発明に述べる内層材は、配線基板の一般的な内層に用いるもので、一般的に、補強基材に樹脂組成物を含浸した樹脂含浸基材の必要枚数の上面及び又は下面に、銅、アルミニュウム、真鍮、ニッケル、鉄等の単独、合金又は複合箔からなる金属箔を積層一体化し、金属箔をエッチング等により回路形成したものである。   The inner layer material described in the present invention is used for a general inner layer of a wiring board, and generally, copper, copper, on the upper surface and / or lower surface of a required number of resin-impregnated base materials obtained by impregnating a reinforcing base material with a resin composition, A metal foil made of aluminum, brass, nickel, iron or the like alone, alloy or composite foil is laminated and integrated, and the metal foil is formed by etching or the like.

本発明に述べるプリプレグは、補強基材に樹脂組成物を含浸させ、半硬化のBステージ状態にした接着シートで、一般的な配線基板に用いるプリプレグが使用できる。   The prepreg described in the present invention is an adhesive sheet in which a reinforcing base material is impregnated with a resin composition to form a semi-cured B stage, and a prepreg used for a general wiring board can be used.

上記の樹脂組成物としては、プリント配線板の絶縁材料として用いられる公知慣例の樹脂組成物を用いることができる。通常、耐熱性、耐薬品性の良好な熱硬化性樹脂がベースとして用いられ、フェノ−ル樹脂、エポキシ樹脂、ポリイミド樹脂、不飽和ポリエステル樹脂、ポリフェニレンオキサイド樹脂、フッ素樹脂等の樹脂の1種類または2種類以上を混合して用い、必要に応じてタルク、クレー、シリカ、アルミナ、炭酸カルシュウム、水酸化アルミニゥム、三酸化アンチモン、五酸化アンチモン等の無機質粉末充填剤、ガラス繊維、アスベスト繊維、パルプ繊維、合成繊維、セラミック繊維等の繊維質充填剤を添加したものである。
また、樹脂組成物には、誘電特性、耐衝撃性、フィルム加工性などを考慮して、熱可塑性樹脂がブレンドされてあっても良い。さらに必要に応じて有機溶媒、難燃剤、硬化剤、硬化促進剤、熱可塑性粒子、着色剤、紫外線不透過剤、酸化防止剤、還元剤などの各種添加剤や充填剤を加えて調合する。
As said resin composition, the well-known and usual resin composition used as an insulating material of a printed wiring board can be used. Usually, a thermosetting resin having good heat resistance and chemical resistance is used as a base, and one kind of resin such as phenol resin, epoxy resin, polyimide resin, unsaturated polyester resin, polyphenylene oxide resin, fluorine resin or the like Two or more types are used in combination, and as required, inorganic powder fillers such as talc, clay, silica, alumina, calcium carbonate, aluminum hydroxide, antimony trioxide, antimony pentoxide, glass fiber, asbestos fiber, pulp fiber Further, a fiber filler such as synthetic fiber or ceramic fiber is added.
In addition, the resin composition may be blended with a thermoplastic resin in consideration of dielectric properties, impact resistance, film processability, and the like. Further, various additives and fillers such as an organic solvent, a flame retardant, a curing agent, a curing accelerator, thermoplastic particles, a colorant, an ultraviolet light impermeant, an antioxidant and a reducing agent are added as necessary.

上記の補強基材としては、ガラス、アスベスト等の無機質繊維、ポリエステル、ポリアミド、ポリアクリル、ポリビニルアルコール、ポリイミド、フッ素樹脂等の有機質繊維、木綿等の天然繊維の織布、不織布、紙、マット等を用いるものである。   Examples of the reinforcing substrate include inorganic fibers such as glass and asbestos, polyester, polyamide, polyacryl, polyvinyl alcohol, polyimide, organic fibers such as fluorine resin, natural fibers such as cotton, nonwoven fabric, paper, mats, etc. Is used.

通常、補強基材に対する樹脂組成物の付着量が、乾燥後のプリプレグの樹脂含有率で20〜90重量%となるように補強基材に含浸又は塗工した後、通常100〜200℃の温度で1〜30分加熱乾燥し、半硬化状態(Bステージ状態)のプリプレグを得る。このプリプレグを通常1〜20枚重ね、その両面に金属箔を配置した構成で加熱加圧する。成形条件としては通常の積層板の手法が適用でき、例えば多段プレス、多段真空プレス、連続成形、オートクレーブ成形機等を使用し、通常、温度100〜250℃、圧力2〜100kg/cm、加熱時間0.1〜5時間の範囲で成形したり、真空ラミネート装置などを用いてラミネート条件50〜150℃、0.1〜5MPaの条件で減圧下又は大気圧の条件で行ったりする。絶縁層となるプリプレグ層の厚みは用途によって異なるが、通常0.1〜5.0mmの厚みのものが良い。 Usually, after impregnating or coating the reinforcing base so that the amount of the resin composition attached to the reinforcing base is 20 to 90% by weight in terms of the resin content of the prepreg after drying, the temperature is usually 100 to 200 ° C. And dried for 1 to 30 minutes to obtain a prepreg in a semi-cured state (B stage state). Usually, 1 to 20 sheets of this prepreg are stacked and heated and pressed in a configuration in which metal foils are arranged on both surfaces. As a molding condition, a method of a normal laminated plate can be applied. For example, a multi-stage press, a multi-stage vacuum press, continuous molding, an autoclave molding machine or the like is used, and a temperature is typically 100 to 250 ° C., a pressure is 2 to 100 kg / cm 2 , and heating is performed. The molding may be performed in the range of 0.1 to 5 hours, or may be performed under reduced pressure or atmospheric pressure under a lamination condition of 50 to 150 ° C. and 0.1 to 5 MPa using a vacuum laminating apparatus or the like. Although the thickness of the prepreg layer used as an insulating layer changes with uses, the thickness of 0.1-5.0 mm is good normally.

本発明に述べる金属箔は、一般的な配線基板に用いる金属の箔が使用できる。本発明に用いる金属箔の表面粗さはJISB0601に示す10点平均粗さ(Rz)が両面とも2.0μm以下であることが電気特性上好ましい。金属箔には銅箔、ニッケル箔、アルミ箔などを用いることができるが、通常は銅箔を使用する。銅箔の製造条件は、硫酸銅浴の場合、硫酸50〜100g/L、銅30〜100g/L、液温20℃〜80℃、電流密度0.5〜100A/dmの条件、ピロリン酸銅浴の場合、ピロリン酸カリウム100〜700g/L、銅10〜50g/L、液温30℃〜60℃、pH8〜12、電流密度1〜10A/dmの条件が一般的によく用いられ、銅の物性や平滑性を考慮して各種添加剤をいれる場合もある。 As the metal foil described in the present invention, a metal foil used for a general wiring board can be used. As for the surface roughness of the metal foil used in the present invention, the 10-point average roughness (Rz) shown in JIS B0601 is preferably 2.0 μm or less on both sides in view of electrical characteristics. Although copper foil, nickel foil, aluminum foil, etc. can be used for metal foil, copper foil is usually used. In the case of a copper sulfate bath, the production conditions of the copper foil are sulfuric acid 50-100 g / L, copper 30-100 g / L, liquid temperature 20 ° C.-80 ° C., current density 0.5-100 A / dm 2 , pyrophosphoric acid In the case of a copper bath, the conditions of potassium pyrophosphate 100-700 g / L, copper 10-50 g / L, liquid temperature 30 ° C.-60 ° C., pH 8-12, current density 1-10 A / dm 2 are commonly used. In some cases, various additives may be added in consideration of the physical properties and smoothness of copper.

金属箔の樹脂接着面に行う防錆処理は、ニッケル、錫、亜鉛、クロム、モリブデン、コバルトのいずれか、若しくはそれらの合金を用いて行うことができる。これらはスパッタや電気めっき、無電解めっきにより金属箔上に薄膜形成を行うものであるが、コストの面から電気めっきが好ましい。防錆処理金属の量は、金属の種類によって異なるが、合計で10〜2000μg/dmが好適である。防錆処理が厚すぎるとエッチング阻害と電気特性の低下を引き起こし、薄すぎると樹脂とのピール強度低下の要因となりうる。さらに、防錆処理上にクロメート処理層が形成されていると樹脂とのピール強度低下を抑制できるため有用である。 The antirust treatment performed on the resin adhesive surface of the metal foil can be performed using any of nickel, tin, zinc, chromium, molybdenum, cobalt, or an alloy thereof. In these methods, a thin film is formed on a metal foil by sputtering, electroplating or electroless plating, but electroplating is preferable from the viewpoint of cost. The amount of the rust-proofing metal varies depending on the type of metal, but is preferably 10 to 2000 μg / dm 2 in total. If the rust preventive treatment is too thick, it may cause etching inhibition and deterioration of electrical characteristics, and if it is too thin, it may cause a reduction in peel strength with the resin. Furthermore, if a chromate treatment layer is formed on the rust prevention treatment, it is useful because a reduction in peel strength with the resin can be suppressed.

本発明に述べるビアホールは、めっき時に貫通していない全ての接続穴で、2以上の複数の導体層の層間を接続するためのめっきをした穴であるインタースティシャルバイアホール(IVH)が含まれる。また、穴内表面がめっきしたもののほか、穴内部がすべてめっきしたフィルドバイアも含まれる。バイアホールの直径は、絶縁層の厚さと同程度から2倍程度のものがフィルドバイアを形成しやすい。   The via holes described in the present invention include interstitial via holes (IVH) that are plated holes for connecting the layers of two or more conductor layers at all connection holes that are not penetrated during plating. . In addition to those plated on the inner surface of the hole, fill vias in which the entire hole is plated are also included. A via hole having a diameter about the same as or twice the thickness of the insulating layer tends to form a fill via.

本発明に述べる下地無電解めっきは、ビアホールを設けた後の、基板表面全面に設けた無電解めっきで、上層表面、ビアホール側面、ビアホール底面部の内層回路表面などにめっきされる。   The base electroless plating described in the present invention is an electroless plating provided on the entire surface of the substrate after the via hole is provided, and is plated on the surface of the upper layer, the side surface of the via hole, the inner layer circuit surface of the bottom surface of the via hole, and the like.

本発明に述べるめっきレジストは、電解めっきを防止するもので、ドライフィルムや液状レジストを、基板全面に設け、露光後、炭酸ナトリウム水溶液などでこの後行う電解めっき部分を取り除くように現像したものである。 The plating resist described in the present invention prevents electrolytic plating. A dry film or a liquid resist is provided on the entire surface of the substrate, and after exposure, developed with a sodium carbonate aqueous solution or the like so as to remove the subsequent electrolytic plating portion. is there.

本発明に述べる上層配線層は、内層材の表面に設けた硬化したプリプレグよりなる上層に設けた配線層をさす。   The upper wiring layer described in the present invention refers to a wiring layer provided in an upper layer made of a cured prepreg provided on the surface of the inner layer material.

本発明に述べる電解フィルドめっき液によるめっきは、従来の電解フィルドめっき液を使用しためっきをさし、めっき層の厚さは、上層面の厚さよりビアホール内の底面の厚さが厚くなる。上層面の厚さとしては0.5〜3μmの範囲で、ビアホール内の底面の厚さとして2〜10μmの範囲程度に設ける。
電解フィルドめっき液は、一般に硫酸銅めっき浴中にめっき成長を抑制する抑制剤と、めっき成長を促進する促進剤とを添加したものである。
めっき抑制剤は、物質の拡散則に伴い、ビアホール内部には吸着し難く、基板表面には吸着し易いことを応用して、ビアホール内部と比較して基板表面のめっき成長速度を遅くすることで、ビアホール内部を銅によって充填させ、ビアホール直上部分とビアホール直上部分以外の部分とで、基板表面を平滑に電解めっきする効果があると云われている。めっき抑制剤としては、ポリアルキレングリコールなどのポリエーテル化合物、ポリビニルイミダゾリウム4級化物、ビニルピロリドンとビニルイミダゾリウム4級化物との共重合体などの窒素含有化合物などを用いることができる。
めっき促進剤は、ビアホールの底面、側面、基板表面に、一様に吸着し、続いて、ビアホール内部ではめっきの成長に伴い、表面積が減少していき、ビアホール内の促進剤の分布が密になることを利用して、ビアホール内部のめっき速度が基板表面のめっき速度より速くなり、ビアホール内部を銅によって充填させ、ビアホール直上部分とビアホール直上部分以外の部分とで、基板表面を平滑に電解めっきする効果があると云われている。めっき促進剤としては、3−メルカプト−1−プロパンスルホン酸ナトリウムもしくは2−メルカプトエタンスルホン酸ナトリウムで表される硫黄化合物、もしくはビス−(3−スルフォプロピル)−ジスルファイドジソディウム等で表される硫黄化合物を用いることができる。これらめっき促進剤は、ブライトナー(光沢剤)と呼ばれる銅めっき液に添加する添加物の一種でもある。
上記めっき抑制剤やめっき促進剤は、1種、もしくは2種以上を混合して用いる。これらの水溶液の濃度は特に限定されないが、数ppm〜数%の濃度で用いることができる。
The plating with the electrolytic filled plating solution described in the present invention refers to plating using a conventional electrolytic filled plating solution, and the thickness of the plating layer is thicker at the bottom surface in the via hole than at the upper surface. The thickness of the upper surface is in the range of 0.5 to 3 μm, and the thickness of the bottom surface in the via hole is in the range of 2 to 10 μm.
The electrolytic filled plating solution is generally prepared by adding an inhibitor for suppressing plating growth and an accelerator for promoting plating growth to a copper sulfate plating bath.
By applying the fact that the plating inhibitor is difficult to adsorb inside the via hole and easily adsorbs to the substrate surface in accordance with the diffusion law of the substance, the plating growth rate is slowed down compared to the inside of the via hole. It is said that the inside of the via hole is filled with copper, and the surface of the substrate is smoothly electrolytically plated at a portion directly above the via hole and a portion other than the portion immediately above the via hole. As the plating inhibitor, there can be used a nitrogen-containing compound such as a polyether compound such as polyalkylene glycol, a polyvinyl imidazolium quaternized product, and a copolymer of vinyl pyrrolidone and vinyl imidazolium quaternized product.
The plating accelerator is uniformly adsorbed on the bottom, side, and substrate surface of the via hole, and then the surface area decreases with the growth of plating inside the via hole, and the distribution of the accelerator in the via hole becomes dense. Therefore, the plating speed inside the via hole becomes faster than the plating speed on the substrate surface, the inside of the via hole is filled with copper, and the substrate surface is smoothed and electroplated in the portion directly above the via hole and the portion other than the portion immediately above the via hole. It is said that there is an effect. The plating accelerator is represented by a sulfur compound represented by sodium 3-mercapto-1-propanesulfonate or sodium 2-mercaptoethanesulfonate, or bis- (3-sulfopropyl) -disulfide disodium. Sulfur compounds to be used can be used. These plating accelerators are also a kind of additive added to a copper plating solution called a brightener (brightener).
The said plating inhibitor and a plating accelerator are used 1 type or in mixture of 2 or more types. The concentration of these aqueous solutions is not particularly limited, but can be used at a concentration of several ppm to several percent.

以下、本発明を図面に示す実施の形態に基づいて説明する。
図1は、本発明の多層配線基板の製造方法を示している。
Hereinafter, the present invention will be described based on embodiments shown in the drawings.
FIG. 1 shows a method for manufacturing a multilayer wiring board according to the present invention.

まず、図1(a)に示すように、内層回路1を形成した内層材2にプリプレグ3とその上層に上層配線用の金属箔4とを積層一体化し、その上層配線用の金属箔4を穴形状にパターニングした後、パターニングした部分にレーザーによりビアホール用の穴5を設ける。
回路形成した内層材にプリプレグとその上層に金属箔とを積層一体化する方法は、内層基板とプリプレグ、銅箔を積層プレスする方法や、片面金属箔付樹脂をラミネートとする方法を用いる。絶縁層の厚みは10から100μm程度、望ましくは20から60μmがよく、金属箔の厚みは5から9μmである。片面金属箔付樹脂の作製に用いる樹脂、銅箔は積層板の時と同様のものを用い、樹脂ワニスを金属箔にキスコーター、ロールコーター、コンマコーター等を用いて塗布するか或いはフィルム状の樹脂を金属箔にラミネートして行う。樹脂ワニスを金属箔に塗布する場合は、その後、加熱ならびに乾燥させるが、条件は100〜200℃の温度で1〜30分とするのが適当であり、加熱、乾燥後の樹脂組成物中における残留溶剤量は、0.2〜10%程度が適当である。フィルム状の樹脂を金属箔にラミネートする場合は、50〜150℃、0.1〜5MPaの条件で真空或いは大気圧の条件が適当である。
また、ビアホール形成に用いることが出来るレーザーとしては、COやCO、エキシマ等の気体レーザーやYAG等の固体レーザーがある。COレーザーが容易に大出力を得られる事からφ50μm以上のIVHの加工に適している。φ50μm以下の微細なIVHを加工する場合は、より短波長で集光性のよいYAGレーザーが適しているが、内層の銅箔を貫通しないよう注意する必要がある。
First, as shown in FIG. 1A, a prepreg 3 and a metal foil 4 for upper layer wiring are laminated and integrated on an inner layer material 2 on which an inner layer circuit 1 is formed, and the metal foil 4 for upper layer wiring is integrated. After patterning into a hole shape, a via hole 5 is provided in the patterned portion by laser.
As a method of laminating and integrating the prepreg and the metal foil on the upper layer on the inner layer material on which the circuit is formed, a method of laminating and pressing the inner layer substrate, the prepreg and the copper foil, or a method of laminating a resin with a single-sided metal foil is used. The thickness of the insulating layer is about 10 to 100 μm, preferably 20 to 60 μm, and the thickness of the metal foil is 5 to 9 μm. Resin used for the production of resin with single-sided metal foil, copper foil is the same as that for laminates, and resin varnish is applied to metal foil using a kiss coater, roll coater, comma coater, etc., or a film-like resin Is laminated to a metal foil. When the resin varnish is applied to the metal foil, it is then heated and dried, but the condition is suitably 1 to 30 minutes at a temperature of 100 to 200 ° C., and in the resin composition after heating and drying. The residual solvent amount is suitably about 0.2 to 10%. When laminating a film-like resin on a metal foil, vacuum or atmospheric pressure conditions are suitable under the conditions of 50 to 150 ° C. and 0.1 to 5 MPa.
As the laser is able to be used for forming a via hole, CO 2 and CO, it has a solid laser gas laser or a YAG or the like of an excimer like. Since a CO 2 laser can easily obtain a large output, it is suitable for processing IVH of φ50 μm or more. When processing a fine IVH of φ50 μm or less, a YAG laser with a shorter wavelength and good condensing property is suitable, but care must be taken not to penetrate the inner layer copper foil.

次に、図1(b)に示すように、塩化鉄第二鉄水溶液や過硫酸アンモニウム、硫酸−過酸化水素水混合水溶液などのエッチング液により、上記の上層配線用の金属箔の厚さ4を1から3μm程度までハーフエッチングする。このとき上記上層配線用の金属箔4の厚さが最初から1から3μm程度であれば、さらにハーフエッチングする必要はない。   Next, as shown in FIG. 1 (b), the thickness 4 of the metal foil for the upper layer wiring is reduced by an etching solution such as ferric chloride aqueous solution, ammonium persulfate, or sulfuric acid-hydrogen peroxide aqueous solution. Half-etch from about 1 to 3 μm. At this time, if the thickness of the metal foil 4 for the upper layer wiring is about 1 to 3 μm from the beginning, it is not necessary to further perform half etching.

次に、図1(c)に示すように、金属箔上及びビアホール内部に触媒核を付与後、無電解めっき層6を形成する。たとえば、触媒核の付与には、パラジウムイオン触媒であるアクチベーターネオガント(アトテック・ジャパン株式会社製、商品名)やパラジウムコロイド触媒であるHS201B(日立化成工業株式会社製、商品名)を使用する。本発明における上記パラジウム触媒の銅箔上への吸着量は0.03〜0.6μg/cmの範囲であり、更に望ましくは0.05〜0.3μg/cmの範囲である。パラジウム触媒を吸着させる際の処理温度は10〜40℃が好ましい。処理時間をコントロールすることにより、パラジウム触媒の銅箔上への吸着量をコントロールすることができる。
また、無電解めっきには、CUST2000(日立化成工業株式会社製、商品名)やCUST201(日立化成工業株式会社製、商品名)等の市販の無電解銅めっきが使用できる。これらの無電解銅めっきは硫酸銅、ホルマリン、錯化剤、水酸化ナトリウムを主成分とする。めっきの厚さは次の電気めっきが行うことができる厚さであればよく、0.1〜5μmの範囲である。しかし後述するように無電解めっき層に付着するビアホール内めっきレジスト残渣やその他の汚れをエッチングで除去するため、より好ましくは0.5〜3.0μmの範囲である。
Next, as shown in FIG.1 (c), after providing a catalyst nucleus on metal foil and a via hole, the electroless-plating layer 6 is formed. For example, an activator neogant (trade name, manufactured by Atotech Japan Co., Ltd.) that is a palladium ion catalyst and HS201B (trade name, manufactured by Hitachi Chemical Co., Ltd.) that is a palladium colloid catalyst are used for imparting a catalyst nucleus. . Adsorption onto a copper foil of the palladium catalyst in the present invention is in the range of 0.03~0.6μg / cm 2, more preferably in the range of 0.05~0.3μg / cm 2. The treatment temperature for adsorbing the palladium catalyst is preferably 10 to 40 ° C. By controlling the treatment time, the adsorption amount of the palladium catalyst on the copper foil can be controlled.
For electroless plating, commercially available electroless copper plating such as CUST2000 (trade name, manufactured by Hitachi Chemical Co., Ltd.) or CUST201 (trade name, manufactured by Hitachi Chemical Co., Ltd.) can be used. These electroless copper platings are mainly composed of copper sulfate, formalin, complexing agent and sodium hydroxide. The thickness of plating should just be the thickness which can perform the following electroplating, and is the range of 0.1-5 micrometers. However, as will be described later, in order to remove via-hole plating resist residues and other dirt adhering to the electroless plating layer by etching, the thickness is more preferably in the range of 0.5 to 3.0 μm.

次に、図1(d)に示すように、無電解めっきを行った上に電解フィルドめっき液による電解めっき層7を形成する。めっき層の厚さは、上層面の厚さよりビアホール内の底面の厚さが厚くなり、上層面の厚さとしては0.5〜3.0μmの範囲で、ビアホール内の底面の厚さとして2〜10μmの範囲程度に設ける。   Next, as shown in FIG.1 (d), after performing electroless plating, the electrolytic plating layer 7 by an electrolytic filled plating solution is formed. The thickness of the plating layer is such that the thickness of the bottom surface in the via hole is larger than the thickness of the upper layer surface, the thickness of the upper layer surface is in the range of 0.5 to 3.0 μm, and the thickness of the bottom surface in the via hole is 2 It is provided in a range of about 10 μm.

次に、図1(e)に示すように、電解フィルドめっき液によるめっき層7の上にめっきレジスト8を形成する。めっきレジストの厚さは、その後めっきする導体の厚さと同程度かより厚い膜厚にするのが好適である。めっきレジストに使用できる樹脂には、PMER P−LA900PM(東京応化株式会社製、商品名)のような液状レジストや、HW−425(日立化成工業株式会社、商品名)、RY−3025(日立化成工業株式会社、商品名)等のドライフィルムがある。ビアホール上と導体回路となるべき個所はめっきレジストを形成しない。   Next, as shown in FIG.1 (e), the plating resist 8 is formed on the plating layer 7 by an electrolytic filled plating solution. The thickness of the plating resist is preferably set to a thickness that is about the same as or thicker than the conductor to be subsequently plated. Resins that can be used for the plating resist include liquid resists such as PMER P-LA900PM (trade name, manufactured by Tokyo Ohka Co., Ltd.), HW-425 (trade name, Hitachi Chemical Co., Ltd.), RY-3025 (Hitachi Chemical). There are dry films such as Kogyo Co., Ltd. (trade name). A plating resist is not formed on the via hole and the portion to be a conductor circuit.

次に、図1(f)に示すように、過マンガン酸塩、クロム酸塩、クロム酸のような酸化剤などを用いてビアホール内部の樹脂残さの除去を行った後、塩化鉄第二鉄水溶液や過硫酸アンモニウム、硫酸−過酸化水素水混合水溶液などのエッチング液により、上層の配線層上の電解フィルドめっき液によるめっき層7が少なくとも半分以下になるまで、最大で、上層の配線層上の下地無電解めっき層6厚が半分程度になるまでエッチングにより除去する。   Next, as shown in FIG. 1 (f), after removing the resin residue inside the via hole using an oxidizing agent such as permanganate, chromate, chromic acid, etc., ferric chloride is then used. With an etching solution such as an aqueous solution, ammonium persulfate, or a sulfuric acid-hydrogen peroxide mixed solution, the uppermost wiring layer on the upper wiring layer until the plating layer 7 by the electrolytic filled plating solution on the upper wiring layer is at least half or less. The underlying electroless plating layer 6 is removed by etching until the thickness is about half.

次に、図1(g)に示すように、電気めっきによりフィルドバイア9と回路パターン10を形成する。電気めっきには、通常プリント配線板で使用されるフィルドバイア用硫酸銅電気めっきが使用できる。めっきの厚さは、回路導体として使用でき、なおかつビアホールを導体金属で埋め込むことができればよく、1〜100μmの範囲である事が好ましく、10〜50μmの範囲である事がより好ましい。   Next, as shown in FIG. 1G, a fill via 9 and a circuit pattern 10 are formed by electroplating. For electroplating, copper sulfate electroplating for fill vias that is usually used for printed wiring boards can be used. The plating thickness may be used as a circuit conductor and the via hole can be filled with a conductive metal, and is preferably in the range of 1 to 100 μm, and more preferably in the range of 10 to 50 μm.

次に、図1(h)に示すように、アルカリ性剥離液や硫酸あるいは市販のレジスト剥離液を用いてめっきレジスト8の剥離を行い、パターン部以外の銅をエッチング除去する。   Next, as shown in FIG. 1 (h), the plating resist 8 is stripped using an alkaline stripping solution, sulfuric acid, or a commercially available resist stripping solution, and copper other than the pattern portion is removed by etching.

次に、図1(i)に示すように、パターン部以外の銅を好ましくは10〜300g/Lの硫酸及び10〜200g/Lの過酸化水素を主成分とするエッチング液を用いて除去することで回路形成が終了する。エッチング終了後、アンダーカットが片側5μm以内であることが好ましい。
以上示した方法により2層より成る配線基板が完成する。さらに多層板を作製する場合は、この配線基板の表面を粗面化などし、この銅パターンの上に形成される層間樹脂絶縁層との密着性を向上させながら、プリプレグとその上層に金属箔とを積層などして作製する。
Next, as shown in FIG. 1 (i), copper other than the pattern portion is preferably removed using an etching solution mainly composed of 10 to 300 g / L sulfuric acid and 10 to 200 g / L hydrogen peroxide. This completes the circuit formation. After the etching is completed, the undercut is preferably within 5 μm on one side.
A two-layer wiring board is completed by the method described above. Furthermore, when producing a multilayer board, the surface of the wiring board is roughened, and while improving the adhesion with the interlayer resin insulating layer formed on the copper pattern, a metal foil is formed on the prepreg and the upper layer. And are laminated.

以下、本発明を実施例に基づいて説明する。
まず、回路形成した内層材に、絶縁層の厚みが30μm、金属箔の厚みが5μmの片面金属箔付樹脂フィルムを120℃、2MPaの条件で真空ラミネートする。次に、この金属箔をビアホール用として直径80μmの穴形状にパターニングする。次に、直径80μmの穴形状部分にCOレーザーでビアホール用穴加工をする。
次に、塩化鉄第二鉄水溶液や過硫酸アンモニウム、硫酸−過酸化水素水混合水溶液などのエッチング液により、上記の金属箔の厚さを2μmまでハーフエッチングする。
次に、金属箔上及びビアホール内部にパラジウムコロイド触媒であるHS201B(日立化成工業株式会社製、商品名)を使用して触媒核を付与後、CUST2000(日立化成工業株式会社製、商品名)を使用して厚さ2μmの下地無電解めっき層を形成する。
次に、上層面の厚さとしては2μm、ビアホール内の底面の厚さとして6μmの電解フィルドめっき液による電解めっき層を形成する。
次に、ドライフィルムレジストであるSL−1229(日立化成工業株式会社、商品名)を使用して厚さ29μmのめっきレジストを形成する。ビアホール上と導体回路となるべき個所はめっきレジストを取り除く。
次に、過硫酸アンモニウム、硫酸−過酸化水素水混合水溶液のエッチング液により、上層の配線層上の下地無電解めっき膜厚が1.8μmになるまでエッチングにより除去する。
次に、厚さ20μmの電気めっきにより回路パターンを形成する。
次に、アルカリ性剥離液を用いてレジストの剥離を行い、パターン部以外の銅を好ましくは50g/Lの硫酸及び50g/Lの過酸化水素を主成分とするエッチング液を用いて除去する。
Hereinafter, the present invention will be described based on examples.
First, a resin film with a single-sided metal foil having an insulating layer thickness of 30 μm and a metal foil thickness of 5 μm is vacuum-laminated on the circuit-formed inner layer material under the conditions of 120 ° C. and 2 MPa. Next, this metal foil is patterned into a hole shape having a diameter of 80 μm for a via hole. Next, a hole for a via hole is formed in a hole-shaped portion having a diameter of 80 μm with a CO 2 laser.
Next, the thickness of the metal foil is half-etched to 2 μm with an etching solution such as ferric chloride aqueous solution, ammonium persulfate, or sulfuric acid-hydrogen peroxide mixed solution.
Next, after applying catalyst core using HS201B (trade name, manufactured by Hitachi Chemical Co., Ltd.), which is a palladium colloid catalyst, on the metal foil and inside the via hole, CUST2000 (trade name, manufactured by Hitachi Chemical Co., Ltd.) is used. A base electroless plating layer having a thickness of 2 μm is formed.
Next, an electrolytic plating layer is formed with an electrolytic filled plating solution having an upper layer surface thickness of 2 μm and a bottom surface inside the via hole of 6 μm.
Next, a plating resist having a thickness of 29 μm is formed using SL-1229 (Hitachi Chemical Co., Ltd., trade name) which is a dry film resist. The plating resist is removed from the via hole and the portion to be a conductor circuit.
Next, it is removed by etching with an etching solution of ammonium persulfate and sulfuric acid-hydrogen peroxide aqueous solution until the base electroless plating film thickness on the upper wiring layer becomes 1.8 μm.
Next, a circuit pattern is formed by electroplating with a thickness of 20 μm.
Next, the resist is stripped using an alkaline stripping solution, and copper other than the pattern portion is preferably removed using an etching solution mainly containing 50 g / L sulfuric acid and 50 g / L hydrogen peroxide.

本発明の多層配線基板の製造方法を示している。1 illustrates a method for manufacturing a multilayer wiring board according to the present invention.

符号の説明Explanation of symbols

1…内層回路、2…内層材、3…プリプレグ、4…上層配線用の金属箔、5…ビアホール用の穴、6…無電解めっき層、7…電解フィルドめっき液によるめっき層、8…めっきレジスト、9…フィルドバイア、10…回路パターン。   DESCRIPTION OF SYMBOLS 1 ... Inner layer circuit, 2 ... Inner layer material, 3 ... Prepreg, 4 ... Metal foil for upper layer wiring, 5 ... Hole for via hole, 6 ... Electroless plating layer, 7 ... Plating layer by electrolytic filled plating solution, 8 ... Plating Resist, 9 ... fill via, 10 ... circuit pattern.

Claims (1)

回路形成した内層材にプリプレグとその上層に金属箔とを積層一体化し、その金属箔を穴形状にパターニングした後ビアホール用の穴を設けて、下地無電解めっきし、上層配線用にめっきレジストを設けてから、電解めっきで上層配線層の形成と前記ビアホールの穴埋めする多層配線基板の製造方法にあたって、上記下地無電解めっき後で上記上層配線用のめっきレジストを設ける前に、電解フィルドめっき液によるめっきをする多層配線基板の製造方法。   A prepreg and a metal foil are laminated and integrated on the inner layer material on which the circuit is formed, the metal foil is patterned into a hole shape, holes for via holes are provided, base electroless plating is performed, and a plating resist is applied for upper layer wiring. In the manufacturing method of the multilayer wiring board in which the upper wiring layer is formed by electrolytic plating and the via hole is filled, after the base electroless plating, before the plating resist for the upper wiring is provided, an electrolytic filled plating solution is used. A method of manufacturing a multilayer wiring board for plating.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020230888A1 (en) * 2019-05-15 2020-11-19 住友電気工業株式会社 Printed wiring board
WO2021234875A1 (en) * 2020-05-20 2021-11-25 住友電気工業株式会社 Printed wiring board

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253693A (en) * 1989-03-28 1990-10-12 Ibiden Co Ltd Manufacture of printed wiring board
JP2003017848A (en) * 2001-06-29 2003-01-17 Toppan Printing Co Ltd Method for manufacturing multilayer printed wiring board having filled-via structure
JP2005044914A (en) * 2003-07-25 2005-02-17 Cmk Corp Printed wiring board and manufacturing method therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253693A (en) * 1989-03-28 1990-10-12 Ibiden Co Ltd Manufacture of printed wiring board
JP2003017848A (en) * 2001-06-29 2003-01-17 Toppan Printing Co Ltd Method for manufacturing multilayer printed wiring board having filled-via structure
JP2005044914A (en) * 2003-07-25 2005-02-17 Cmk Corp Printed wiring board and manufacturing method therefor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020230888A1 (en) * 2019-05-15 2020-11-19 住友電気工業株式会社 Printed wiring board
CN113811641A (en) * 2019-05-15 2021-12-17 住友电气工业株式会社 Printed wiring board
CN113811641B (en) * 2019-05-15 2023-12-05 住友电气工业株式会社 Printed wiring board
US11877397B2 (en) 2019-05-15 2024-01-16 Sumitomo Electric Industries, Ltd. Printed circuit board
WO2021234875A1 (en) * 2020-05-20 2021-11-25 住友電気工業株式会社 Printed wiring board

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