JP2009055054A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces a crosstalk between adjacent optical waveguides which are disposed in high density for connecting between electronic integrated circuit devices. <P>SOLUTION: Provided is the semiconductor device which includes: a support substrate 1; an electronic integrated circuit device 2 connected and fixed onto the support substrate 1; a light-emitting device 4 located on the support substrate 1 for converting an electric signal outputted from the electronic integrated circuit device 2 into a light signal; a light receiving device 5 located on the support substrate 1 for converting the light signal into the electric signal to input it into the electronic integrated circuit device 2; a first optical waveguide connected optically to the light-emitting device 4; and a second optical waveguide which is connected optically to the light receiving device 5, has an optical propagation direction which is reverse to the optical propagation direction in the first optical waveguide, and is adjacent to the first optical waveguide. The semiconductor device further includes a pair of optical waveguide pairs located on the support substrate 1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device used in an information processing system using optical transmission / reception.

  Advances in IC (integrated circuit) technology and LSI (large-scale integrated circuit) technology, which are technologies related to electronic integrated circuit elements, have improved their operating speed and integration scale, and the high MPU (Micro-Processing Unit). Improvements in performance and high speed and large capacity of memory chips are progressing rapidly. Under these circumstances, especially when high-speed digital signal transmission and a high-speed bus between the MPU and the memory chip are required, the delay of electric signals and the deterioration of crosstalk due to high-speed and high-density signal wiring are high performance. It has become an obstacle to conversion. The use of optical wiring (optical interconnection) has attracted attention as a technology that can solve this problem. This optical wiring is considered to be applicable at various levels such as between equipment devices, between boards in equipment equipment, between chips in board, etc. For example, for signal transmission over a relatively short distance, such as between chips in a board. An optical transmission / reception system using an optical waveguide as an optical signal transmission path is effective.

  Regarding a semiconductor device used in an optical transmission / reception system using such an optical wiring, for example, Japanese Patent Laid-Open No. 5-48073 discloses a chip of an optoelectronic integrated circuit in which an electronic element integrated circuit and an optical element are provided on the same substrate. There is disclosed a semiconductor device having a support substrate on which a plurality of optical waveguides are disposed and an optical waveguide is provided, and the chip is disposed at a position where the optical element and the optical waveguide are optically connected. Has been.

  In this semiconductor device, as shown in a sectional view in FIGS. 5 and 6 and in a partially broken perspective view in FIG. 7, an optical waveguide 25 and a metal wiring 26 are formed on a Si substrate 28. 20, a chip 23 of an optoelectronic integrated circuit in which a laser diode 21 and an electronic integrated circuit are arranged on the same chip is attached to the Si substrate 28. The chip 23 includes a photodiode 20, a laser diode 21, an optical waveguide 25, and the like. Are aligned so that the metal wires 26 on the Si substrate 28 and the bonding pads on the chip 23 are electrically connected.

According to this configuration, the chip 23 of the optoelectronic integrated circuit in which the optical elements such as the laser diode 21 and the photodiode 20 are arranged on the semiconductor substrate of the electronic integrated circuit in which the electronic elements are integrated is used, and signal transmission between the chips 23 is performed. Since the optical signal is transmitted through the optical waveguide 25 instead of the electrical wiring, the delay due to the resistance, capacitance, and inductance of the wiring between the chips 23 is eliminated. Further, since the optical waveguide 25 for transmitting an optical signal is patterned by photolithography in the same manner as the conventional electric wiring, it is excellent in manufacturing yield and reliability. Furthermore, since there is no delay due to resistance, capacitance, and inductance of the electrical wiring between the chips 23 of the multi-chip semiconductor device, the processing speed of the system in the package is improved by about 50%, and the optical signal for transmitting the optical signal is increased. Since the waveguide 25 is patterned by photolithography in the same manner as the conventional electric wiring, the manufacturing yield and reliability equivalent to the electric wiring are obtained.
JP-A-5-48073

  However, Japanese Patent Laid-Open No. 5-48073 which discloses the semiconductor device shown in FIGS. 5 to 7 does not have a detailed description regarding the arrangement direction of the light emitting element and the light receiving element, and the arrangement as shown in FIGS. Then, when a plurality of photodiodes 20 that are light receiving elements, laser diodes 21 that are light emitting elements, and optical waveguides 25 are arranged adjacent to each other, the propagation directions of light in the adjacent optical waveguides 25 are the same. In order to avoid light leakage (crosstalk) to the light receiving element 20 coupled to the waveguide 25, it is necessary to widen the interval between the optical waveguides 25, which hinders high integration.

  As an example, when the refractive index difference (Δn) between the core portion and the clad portion of the optical waveguide is 0.3% and the optical waveguide length is 20 mm, the amount of crosstalk to the light receiving element coupled to the adjacent optical waveguide is The calculated values are shown graphically in FIG. In FIG. 8, the horizontal axis represents the interval between adjacent optical waveguides (unit: μm), the vertical axis represents the amount of crosstalk between the optical waveguides (unit: dB), and the black square plot and characteristic curve are the amount of crosstalk. Shows changes. The result shown in FIG. 8 shows that when the amount of crosstalk to the light receiving element coupled to the adjacent optical waveguide is to be suppressed to 20 dB or less as an example, the interval between the adjacent optical waveguides needs to be 22 μm or more. It shows that there is.

  Also, in the conventional semiconductor device as described above, when a plurality of light receiving elements, light emitting elements, and optical waveguides are arranged adjacent to each other, electrical crosstalk occurs between electrical wirings (not shown) connected to the light receiving elements and the light emitting elements. There was a problem such as.

  The present invention has been completed as a result of diligent research by the inventor in view of the above circumstances, and its purpose is to reduce crosstalk to light receiving elements coupled to adjacent optical waveguides arranged at high density. Another object of the present invention is to provide a semiconductor device suitable for an information processing system using optical transmission / reception.

  Another object of the present invention is to use optical transmission / reception that reduces crosstalk to light receiving elements coupled to adjacent optical waveguides arranged at high density and also reduces electrical crosstalk between electrical wirings. Another object of the present invention is to provide a semiconductor device suitable for the information processing system.

  Still another object of the present invention is to provide a semiconductor device that can be manufactured at low cost and with less loss.

  The semiconductor device of the present invention includes a support substrate, an electronic integrated circuit device connected and fixed on the support substrate, and an electrical signal that is located on the support substrate and is output from the electronic integrated circuit device into an optical signal. A light emitting element that is located on the support substrate, converts a light signal into an electric signal and inputs the electric signal to the electronic integrated circuit device, and a first optical waveguide optically connected to the light emitting element, A second optical waveguide that is optically connected to the light receiving element, has a light propagation direction opposite to the light propagation direction in the first optical waveguide, and is adjacent to the first optical waveguide; A pair of optical waveguides positioned on the support substrate.

  In the semiconductor device of the present invention, the light-emitting elements and the light-receiving elements are alternately arranged.

  In the semiconductor device of the present invention, a plurality of the light emitting elements are integrally provided in an array, and a plurality of the light receiving elements are integrally provided in an array.

  The semiconductor device of the present invention includes a plurality of the light emitting elements and the light receiving elements, and the optical waveguide pair is connected to the first optical waveguide pair and the first optical waveguide pair. A light receiving element different from the element and a light emitting element are connected to each other, and the second optical waveguide pair is disposed in a direction different from the extending direction of the first optical waveguide pair.

  According to the semiconductor device of the present invention, since the light propagation direction in the adjacent optical waveguide is opposite, the light propagation direction in the adjacent optical waveguide is opposite, so that the light is transmitted to the adjacent optical waveguide. Even if the signal leaks, the light receiving element coupled to the optical waveguide is arranged on the opposite side of the direction of propagation of the leaked optical signal, so that the crosstalk to the light receiving element coupled to the adjacent optical waveguide Can be reduced. In addition, since crosstalk between adjacent optical waveguides can be reduced, the interval between the adjacent optical waveguides can be narrowed, so that a higher-density optical wiring can be realized.

  Further, according to the semiconductor device of the present invention, when the light emitting element and the light receiving element are alternately shifted with respect to the adjacent optical waveguide, without increasing the interval between the optical waveguides, In addition, the positions of the electric wirings to which the light emitting elements and the light receiving elements are connected are also shifted correspondingly to increase the distance between the electric wirings. Crosstalk can be reduced, and higher-density optical wiring can be realized.

  Further, according to the semiconductor device of the present invention, when a plurality of light emitting elements and light receiving elements arranged alternately are arranged in an integrated manner, the array of light emitting elements and light receiving elements is supported. Since this semiconductor device can be manufactured only by arranging each on the substrate, there is no need to separately arrange a plurality of light emitting elements and light receiving elements on the substrate, and the light emitting elements and light receiving elements for manufacturing this semiconductor device can be reduced. The number of man-hours and costs placed on the support substrate can be reduced, and the positional deviation between the light emitting elements and the light receiving elements is reduced, so that the loss of optical signal propagation can be reduced.

  As described above, according to the present invention, it is suitable for an optical transmission / reception system that reduces crosstalk to light receiving elements coupled to adjacent optical waveguides arranged at high density, and also reduces electrical crosstalk between electrical wirings. A semiconductor device that can be manufactured at a low cost and with a smaller loss can be provided.

  Hereinafter, a semiconductor device of the present invention will be described in detail with reference to the drawings.

  1A and 1B are a top view and a cross-sectional view showing an example of an embodiment of a semiconductor device of the present invention, respectively. FIG. 1A is a top view of the support substrate 1 on which the light emitting element 4, the light receiving element 5, and the optical waveguide 6 are formed, and FIG. 1B is an electronic integrated circuit on which an electronic integrated circuit element 9 is installed. 1 is a cross-sectional view of a semiconductor device of the present invention showing a state in which a circuit device 2 is connected and fixed on a support substrate 1 by conductor bumps 3. As shown in the cross-sectional view of the semiconductor device in FIG. 1B, the light emitting element 4 and the light receiving element 5 are optically connected by an optical waveguide 6 formed on the support substrate 1 in the same manner as these. In addition, input / output of electric signals of the electronic integrated circuit device 2 is electrically connected to the light emitting element 4 and the light receiving element 5 by the conductor bumps 3, and the electric signals are exchanged between these elements 4, 5. Done. The electronic integrated circuit device 2 may be configured with the electronic integrated circuit element 9 installed on the substrate as in this example, or may be a so-called IC chip itself. . The semiconductor device of the present invention is characterized in that the light propagation direction is opposite in the plurality of adjacent optical waveguides 6 shown in FIG.

  Here, the light emitting element 4 and the light receiving element 5 provided on the support substrate 1 of the semiconductor device of the present invention will be described. The light emitting element 4 and the light receiving element 5 emit and receive optical signals, respectively, and optical elements used for optical communication or the like are used. More specifically, the light emitting element 4 corresponds to a light emitting diode (LED), a semiconductor laser (LD), or the like. The light receiving element 5 corresponds to a pin type photodiode, an avalanche photodiode (APD), an MSM type photodiode, or the like. The light-emitting elements 4 and the light-receiving elements 5 are alternately arranged with respect to the adjacent optical waveguides 6 under the same electronic integrated circuit device 2, whereby the light propagation direction in the adjacent optical waveguides 6 is reverse. It is said that.

  In FIG. 1B, the surface-emitting light-emitting element 4 and the surface-receiving light-receiving element 5 are arranged on the support substrate 1 with their operation surfaces facing upward, and on the respective operation surfaces. The end of the optical waveguide 6 is disposed. Reflective surfaces made of slant surfaces are formed at the end portions of these optical waveguides 6, and light from the light emitting element 4 is reflected by the reflective surface on the light emitting element 4 and propagates through the optical waveguide 6. The light propagating through the light 6 is reflected by the reflecting surface on the light receiving element 5 and enters the light receiving element 5.

  Note that the light emitting element 4 and the light receiving element 5 are not limited to the surface operation type but may be an end surface light emitting type or an end surface light receiving type. In addition, the connection between the light emitting element 4 and the light receiving element 5 and the optical waveguide 6 may be a coupling through a grating in addition to a coupling through a reflecting surface, and a direct coupling at the element end faces of the light emitting element 4 and the light receiving element 5. Alternatively, a directional coupler structure may be used. Further, the light emitting element 4 and the light receiving element 5 may be disposed on the support substrate 1 above the optical waveguide 6.

  Next, FIG. 2 shows that the light emitting elements 4 and the light receiving elements 5 connected by the adjacent optical waveguides 6 are alternately shifted with respect to the adjacent optical waveguides 6 under the electronic integrated circuit device 2 (not shown). It is the same top view as FIG. 1A which shows the other example of embodiment of the semiconductor device of this invention arrange | positioned so that it may be located in what is called a zigzag shape. In FIG. 2, the same reference numerals are given to the same parts as in FIG. In this example, the light emitting element 4 (indicated by a diagonal line rising to the right in the drawing) and the light receiving element 5 (indicated by a diagonal line in the upward direction to the left) provided on the support substrate 1 are disposed below the electronic integrated circuit device 2. In FIG. 5, the adjacent optical waveguides 6 are arranged in a zigzag shape with their positions alternately shifted. The light emitting element 4 and the light receiving element 5 electrically connected to the electronic integrated circuit device 2 between the electronic integrated circuit substrates 2 (not shown) are connected to the light emitting element 4 between the respective electronic integrated circuit devices 2. The light receiving element 5 is connected by an optical waveguide 6 so as to be optically connected, and the light propagation direction in the adjacent optical waveguide 6 under the electronic integrated circuit device 2 is reversed.

  On the support substrate 1 in which the light-emitting elements 4 and the light-receiving elements 5 are alternately shifted with respect to the adjacent optical waveguides 6 and arranged in a zigzag shape, two electronic integrated circuit substrates 2 not shown in FIG. Similarly to the example shown in b), the conductor bumps 3 are not shown in FIG. 2 and are electrically connected to the light-emitting element 4 and the light-receiving element 5 by the conductor bumps 3 to exchange electric signals. .

  In such an example of the semiconductor device of the present invention, when the light-emitting elements 4 and the light-receiving elements 5 are arranged in a zigzag pattern with the positions being shifted alternately, the interval between the light-emitting elements 4 and the light-receiving elements 5 is arranged. Is caused to cause erroneous signal transmission due to crosstalk between electrical wirings (not shown) to which the light emitting element 4 and the light receiving element 5 are connected, respectively. It is desirable that the length be longer than the length at which crosstalk between connected electrical wirings (not shown) does not occur. Such a length is, for example, 10 μm to 20 μm or more.

  Next, FIG. 3 shows a plurality of light-emitting elements 4 and light-receiving elements 5 that are arranged in a zigzag manner with the optical waveguides 6 adjacent to each other below the electronic integrated circuit device 2 (not shown) on the support substrate 1. FIG. 1A and FIG. 2 showing still another example of the embodiment of the semiconductor device according to the present invention, in which the elements are integrally provided in an array to form a light receiving element array and a light emitting element array. It is the same top view. In FIG. 3 as well, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals. In this example, the light-emitting elements 4 and the light-receiving elements 5 provided on the support substrate 1 under the electronic integrated circuit device 2 are arranged in a zigzag pattern with their positions shifted with respect to the adjacent optical waveguides 6. A plurality of the light emitting elements 4 and the light receiving elements 5 are integrally provided as a light emitting element array 7 and a light receiving element array 8 in an array.

  Here, the plurality of light-emitting elements 4 and light-receiving elements 5 are integrally provided in an array form that the light-emitting elements 4 and the light-receiving elements 5 are each formed monolithically on a single substrate, or hybridized. By being mounted and arranged, it means that the light emitting element array 7 and the light receiving element array 8 are as shown in FIG.

  Between the electronic integrated circuit device 2 of the light emitting element 4 and the light receiving element 5 in the light emitting element array 7 and the light receiving element array 8 electrically connected to the electronic integrated circuit substrate 2 (not shown) arranged adjacent to each other. Are connected by an optical waveguide 6 so that the respective light-emitting elements 4 and light-receiving elements 5 are optically connected, and the light propagation direction in the adjacent optical waveguides 6 is reversed.

  The light emitting element 4 and the light receiving element 5 are provided as the light emitting element array 7 and the light receiving element array 8, and the light emitting element 4 and the light receiving element 5 are alternately positioned with respect to the adjacent optical waveguide 6 under the electronic integrated circuit device 2 (not shown). As shown in FIG. 1B, two electronic integrated circuit devices 2 (not shown) are provided on the support substrate 1 arranged in a zigzag pattern with the conductors not shown in FIG. The bumps 3 are arranged on the support substrate 1 and are electrically connected to the light-emitting element 4 and the light-receiving element 5 by the conductor bumps 3 to exchange electric signals.

  A process example of the manufacturing method of such a semiconductor device of the present invention will be described.

  First, a plurality of optical waveguides 6 are formed on the surface of the support substrate 1. The support substrate 1 serves as a support substrate for the light emitting element 4, the light receiving element 5, the optical waveguide 6, and the electronic integrated circuit device 2, and the high frequency of various optical elements, optical components, semiconductor elements, and the like by forming electrical wirings and the like. Electronic components are mounted. As the support substrate 1, for example, a silicon substrate, an alumina substrate, a glass ceramic substrate, a mullite substrate, an aluminum nitride substrate, a polyimide substrate, an epoxy substrate, or the like is used in addition to a glass substrate.

  The optical waveguide 6 is for connecting an optical signal between the light emitting element 4 and the light receiving element 5 and includes a core part and a clad part. As a material for forming the optical waveguide 6 composed of the core portion and the clad portion, a material usually used as an optical waveguide can be used, and there is no particular limitation. Specifically, inorganic optical materials such as quartz and glass, PMMA (polymethyl methacrylate), polycarbonate, acrylate, fluorinated acrylate, polyetherimide, polyimide, BCB (benzocyclobutene), fluorinated polyimide, fluorine Common organic optical materials such as resin, deuterated PMMA, deuterated silicone, siloxane polymer, polystyrene, polysilane and the like can be used.

  As a method of forming the optical waveguide 6 using these materials, a general method of forming an optical waveguide can be used, and there is no particular limitation. Specifically, these materials are formed on the support substrate 1 by, for example, thermal evaporation, sputtering, CVD, polymerization, thermal diffusion, ion exchange, ion implantation, epitaxial growth, spin coating, printing, or the like. Is formed, patterned into a waveguide shape by well-known photolithography, and processed into a desired waveguide shape by a wet or dry etching method or the like.

  Next, separately from the step of forming the optical waveguide 6 on the surface of the support substrate 1 described above, the light emitting element 4 and the light receiving element 5 are installed on the support substrate 1. The light emitting element 4 and the light receiving element 5 emit and receive optical signals, respectively.

  As a method of installing the light emitting element 4 and the light receiving element 5 on the support substrate 1, the light emitting element 4 and the light receiving element 5 are prepared separately from the substrate of the support substrate 1, and then they are arranged on the support substrate 1. Alternatively, the light emitting element 4 and the light receiving element 5 may be installed directly on the support substrate 1. At this time, the light emitting element 4 and the light receiving element 5 are arranged so that the light propagation direction in the adjacent optical waveguides 6 is opposite.

  The electronic integrated circuit device 2 includes a silicon substrate when the electronic integrated circuit element 9 is installed on a so-called electronic integrated circuit element mounting substrate such as a chip size package substrate, a multichip module substrate, or an interposer. Multiple or single electronic integrated circuit elements for processing electrical signals such as semiconductor recording devices and microprocessors on circuit boards made of alumina substrates, glass ceramic substrates, mullite substrates, aluminum nitride substrates, polyimide substrates, epoxy substrates, etc. 9 is installed. Further, the electronic integrated circuit element 9, that is, a so-called IC chip itself may be used as an electronic integrated circuit device.

  Finally, the light emitting element 4 and the light receiving element 5 are installed, and the electronic integrated circuit device 2 is disposed on the support substrate 1 connected by the optical waveguide 6 via the conductor bumps 3, so that the semiconductor device of the present invention is provided. It becomes.

  Thus, when manufacturing the semiconductor device of the present invention, the light emitting elements 4 and the light receiving elements 5 connected by the adjacent optical waveguides 6 in the support substrate 1 are alternately shifted in position, and finally light emission. By disposing the electronic integrated circuit device 2 via the conductor bumps 3 on the support substrate 1 in which the element 4 and the light receiving element 5 are installed and connected by the optical waveguide 6, the electronic integrated circuit device 2 is placed under the electronic integrated circuit device 2. In the semiconductor device of the present invention, the light emitting elements 4 and the light receiving elements 5 connected by the adjacent optical waveguides 6 are alternately arranged with respect to the adjacent optical waveguides 6.

  Further, when the light emitting element 4 and the light receiving element 5 connected by the adjacent optical waveguide 6 are installed on the support substrate 1, the light emitting elements arranged in a zigzag pattern alternately shifted under the electronic integrated circuit device 2. 4 and the light receiving element 5 are installed as a light emitting element array 7 and a light receiving element array 8 in which a plurality of light receiving elements 5 are integrally provided in an array, and on the support substrate 1 on which the light emitting element 4 and the light receiving element 5 are thus installed. By disposing the electronic integrated circuit device 2 via the conductor bumps 3, a plurality of light receiving elements 5 and light emitting elements 4 connected by the optical waveguide 6 adjacent below the electronic integrated circuit device 2 are integrated. The semiconductor device of the present invention is provided in an array.

  Next, examples of the semiconductor device of the present invention will be described.

[Example 1]
First, an MSM type photodiode as a light receiving element and a surface emitting semiconductor laser as a light emitting element were arranged on an alumina electric circuit substrate serving as a support substrate so that their arrangement was alternated.

  Next, an organic solvent solution of siloxane polymer is applied to the surface of the support substrate by spin coating, and heat treatment is performed at 85 ° C./30 minutes and 270 ° C./30 minutes to form a lower cladding layer (refractive index of 1) with a thickness of 8 μm. .4405, λ = 1.3 μm).

  Next, a mixed liquid of siloxane polymer and tetra-n-butoxytitanium was applied onto the lower cladding layer by spin coating, and heat treatment was performed at 85 ° C./30 minutes and 150 ° C./30 minutes, and the thickness was 7 μm. A core layer (refractive index: 1.4450, λ = 1.3 μm) was formed.

  Next, an aluminum film having a thickness of 0.5 μm was formed on the core layer by sputtering.

  Next, a photoresist layer having a thickness of 1 μm was formed on the aluminum film by spin coating.

  Next, after exposure and development using a photomask, the aluminum film was etched with a mixed solution of acetic acid, nitric acid, and phosphoric acid, thereby transferring a pattern to be a core portion of the optical waveguide to the aluminum film.

Next, the core layer of the optical waveguide was formed by etching the core layer by RIE (reactive ion etching) using CF ₄ gas and O ₂ gas using the pattern of the aluminum film as a mask.

  Next, after removing the pattern of the aluminum film, an organic solvent solution of siloxane polymer is applied onto the core portion and the lower cladding layer by a spin coating method, and heat treatment is performed at 85 ° C./30 minutes and 270 ° C./30 minutes, An upper cladding layer (refractive index: 1.4405, λ = 1.3 μm) having a thickness of 8 μm was formed.

  Thus, an optical waveguide for connecting the light emitting element and the light receiving element between the plurality of electronic integrated circuit devices was formed on the support substrate on which the light emitting element and the light receiving element were arranged.

  Thereafter, on the support substrate on which the light emitting element and the light receiving element are disposed, the electronic integrated circuit device is disposed through the conductor bump so that the light emitting element and the light receiving element are connected to each other between the electronic integrated circuit devices. did.

  Accordingly, a plurality of electronic integrated circuit devices are arranged on the support substrate, and the light emitting elements and the light receiving elements are alternately provided so as to be positioned under the electronic integrated circuit devices. Thus, a semiconductor device according to the present invention was produced in which a plurality of optical waveguides connecting the light emitting element and the light receiving element were provided, and the light propagation direction in these adjacent optical waveguides was reversed.

  Using the semiconductor device of the present invention obtained as described above and a conventional semiconductor device, the amount of crosstalk to the light receiving element coupled to two adjacent optical waveguides was measured. In this measurement, first, the light output from one light emitting element propagates through the optical waveguide connected to the light emitting element, and the output received by the light receiving element connected to the optical waveguide is measured. Output A. Further, the output received by the light receiving element connected to the adjacent optical waveguide was measured. Here, in the conventional semiconductor device, the result when the light receiving elements connected to the adjacent optical waveguides are in the same column as the light receiving elements of output A is defined as output B. Further, in the semiconductor device of the present invention, the output C was the result when the light receiving elements connected to the adjacent optical waveguides were in the same column as the light emitting elements of output A.

  As a result, the crosstalk amount in the conventional semiconductor device, that is, the output B is about 0.1% to 1% of the output A, whereas the crosstalk amount in the semiconductor device of the present invention, that is, the output C is The output A was about 0.0001% or less, and the effect of reducing crosstalk by the semiconductor device of the present invention could be confirmed.

[Example 2]
When manufacturing the semiconductor device of the present invention in the same manner as in [Embodiment 1], an MSM photodiode is used as a light receiving element, a surface emitting semiconductor laser is used as a light emitting element, and the arrangement is alternately arranged on the support substrate. The element and the light receiving element were arranged in a zigzag so as to be shifted by 20 μm.

  Thus, a plurality of electronic integrated circuit devices are arranged on the support substrate, and the light emitting elements and the light receiving elements are alternately provided in a zigzag manner, and the light emitting elements and the light receiving elements are connected between the electronic integrated circuit devices. A semiconductor device according to the present invention was fabricated in which a plurality of optical waveguides were provided, and the light propagation direction in the adjacent optical waveguides was reversed.

  Using the semiconductor device of the present invention obtained as described above and the conventional semiconductor device compared in Example 1, the amount of crosstalk to the light receiving element coupled to the two optical waveguides is measured. did. In this measurement, first, the light output from one light emitting element propagates through the optical waveguide connected to the light emitting element, and the output received by the light receiving element connected to the optical waveguide is measured. Output A. Next, the output received by the light receiving element connected to the adjacent optical waveguide was measured. Here, in the conventional semiconductor device, the result when the light receiving elements connected to the adjacent optical waveguides are in the same column as the light receiving elements of output A is defined as output B. In the semiconductor device of the present invention, the output C is the result when the light receiving elements connected to the adjacent optical waveguides are in the same column as the light emitting elements of the output A. As a result, the crosstalk amount in the conventional semiconductor device, that is, the output B is about 0.1% to 1% of the output A, whereas the crosstalk amount in the semiconductor device of the present invention, that is, the output C is The output A was about 0.0001% or less, and the effect of reducing crosstalk by the semiconductor device of the present invention could be confirmed.

  Furthermore, in the electronic integrated circuit device, when comparing the electrical crosstalk between the electrical wirings to which the light emitting element and the light receiving element are connected, the crosstalk in the conventional semiconductor device was about 0.1%. The crosstalk in the semiconductor device of the present invention was about 0.001% or less, and the effect of reducing the electrical crosstalk by the semiconductor device of the present invention could be confirmed.

[Example 3]
When manufacturing the semiconductor device of the present invention in the same manner as in [Embodiment 1], an MSM type photodiode as a light receiving element, a surface emitting semiconductor laser as a light emitting element, and the light receiving element and the light emitting element are respectively integrated at intervals of 40 μm. The light emitting element and the light receiving element are arranged so that the positions thereof are shifted by 20 μm alternately.

  As a result, a plurality of electronic integrated circuit devices are arranged on the support substrate, and an array in which a plurality of light emitting elements and light receiving elements are alternately shifted to form a plurality of pieces is arranged. A semiconductor device of the present invention in which a plurality of optical waveguides for connecting a light emitting element and a light receiving element are provided between electronic integrated circuit devices and the light propagation direction in the adjacent optical waveguides is reversed is manufactured. did.

  Using the semiconductor device of the present invention obtained as described above and the conventional semiconductor device compared in Example 1, the amount of crosstalk to the light receiving element coupled to the two optical waveguides is measured. did. In this measurement, first, the light output from one light emitting element propagates through the optical waveguide connected to the light emitting element, and the output received by the light receiving element connected to the optical waveguide is measured. Output A. Next, the output received by the light receiving element connected to the adjacent optical waveguide was measured. Here, in the conventional semiconductor device, the result when the light receiving elements connected to the adjacent optical waveguides are in the same column as the light receiving elements of output A is defined as output B. In the semiconductor device of the present invention, the output C is the result when the light receiving elements connected to the adjacent optical waveguides are in the same column as the light emitting elements of the output A. As a result, the crosstalk amount in the conventional semiconductor device, that is, the output B is about 0.1% to 1% of the output A, whereas the crosstalk amount in the semiconductor device of the present invention, that is, the output C is The output A was about 0.0001% or less, and the effect of reducing crosstalk by the semiconductor device of the present invention could be confirmed.

  Furthermore, in the electronic integrated circuit device, when comparing the electrical crosstalk between the electrical wirings to which the light emitting element and the light receiving element are connected, the crosstalk in the conventional semiconductor device was about 0.1%. The crosstalk in the semiconductor device of the present invention was about 0.001% or less, and the effect of reducing the electrical crosstalk by the semiconductor device of the present invention could be confirmed.

  Furthermore, the displacement amount of the connection position between each light emitting element and each light receiving element and the optical waveguide connected thereto in the arrangement process of the light emitting element and the light receiving element respectively arrayed with the optical waveguide is also different in the conventional semiconductor device. Whereas the amount of deviation is about 0.5 μm, the amount of deviation in the semiconductor element of the present invention is about 0.1 μm or less. According to the semiconductor device of the present invention, the light emitting element and the light receiving element as compared with the conventional semiconductor device It has been confirmed that there is an effect in improving the alignment accuracy between the element and the optical waveguide.

  In addition, this invention is not limited to the example of the above embodiment at all, and various changes may be added without departing from the gist of the present invention.

For example, the optical waveguide is not limited to the optical waveguide formed on the support substrate, but may be a film-shaped optical waveguide formed by peeling off the optical waveguide separately formed on the substrate.
Further, the optical waveguide may be branched into a plurality of parts in order to connect one light emitting element and a plurality of light receiving elements, or in order to connect one light receiving element and a plurality of light emitting elements.

  The direction of connection of the optical waveguide 6 from one electronic integrated circuit device 2 to another electronic integrated circuit device 2 is not limited to one direction as shown in FIGS. As shown in a top view (only a part is shown) of the support substrate 1 in FIG. 4, light from the light emitting elements 4 and the light receiving elements 5 arranged alternately in a plurality of directions (four directions in the example shown in FIG. 4). The waveguide 6 may be connected.

(A) And (b) is the top view and sectional drawing which respectively show an example of embodiment of the semiconductor device of this invention. It is a top view which shows the other example of embodiment of the semiconductor device of this invention. It is a top view which shows the further another example of embodiment of the semiconductor device of this invention. It is a top view which shows the further another example of embodiment of the semiconductor device of this invention. It is sectional drawing which shows the example of the conventional semiconductor device. It is sectional drawing which shows the example of the conventional semiconductor device. It is a partially broken perspective view which shows the example of the conventional semiconductor device. It is a diagram which shows the calculated value result of the amount of crosstalk to the light receiving element couple | bonded with the adjacent optical waveguide.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Support substrate 2 ... Electronic integrated circuit device 3 ... Conductor bump 4 ... Light emitting element 5 ... Light receiving element 6 ... Optical waveguide 7 ... Light emission Element array 8... Light receiving element array 9... Electronic integrated circuit element

Claims (4)

A support substrate;
An electronic integrated circuit device connected and fixed on the support substrate;
A light emitting element that is located on the support substrate and converts an electrical signal output from the electronic integrated circuit device into an optical signal;
A light receiving element that is located on the support substrate and converts an optical signal into an electric signal and inputs the electric signal to the electronic integrated circuit device;
A first optical waveguide optically connected to the light emitting element, and an optical connection to the light receiving element, wherein a light propagation direction is opposite to a light propagation direction in the first optical waveguide; One optical waveguide and a second optical waveguide adjacent thereto, and a pair of optical waveguides located on the support substrate;
A semiconductor device comprising:   The semiconductor device according to claim 1, wherein the light-emitting elements and the light-receiving elements are alternately shifted in position.   3. The semiconductor device according to claim 2, wherein a plurality of the light emitting elements are integrally provided in an array, and a plurality of the light receiving elements are integrally provided in an array. A plurality of the light emitting elements and the light receiving elements, respectively,
The optical waveguide pair is
A first optical waveguide pair;
A second light beam connected to a light receiving element and a light emitting element different from the light receiving element and the light emitting element connected to the first optical waveguide pair, and arranged in a direction different from the extending direction of the first optical waveguide pair. A pair of waveguides;
The semiconductor device according to claim 1, comprising:

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