JP2007012747A - Photoelectric converter and its manufacturing method, and optical information processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric converter which can effectively prevent the diffusion of light, and also to provide its manufacturing method and an optical information processing device. <P>SOLUTION: The photoelectric converter 1 comprises photoelectric conversion elements 2 and an element substrate 3, wherein the photoelectric conversion elements 2 are arranged. In the photoelectric converter 1, the element substrate 3 and lenses 4, formed of a silicon oxide are jointed together via a silicon film 5 on a side opposite from the photoelectric conversion elements 2, and the optical path of an optical beam component of emission light or the incident light of the photoelectric conversion elements 2 is changed by the lenses 4. The method of the photoelectric converter 1 includes processes of jointing a lens material of a silicon oxide and the element substrate via the silicon film, arranging the photoelectric conversion elements in the element substrate, and etching the lens material on a side opposite from the photoelectric conversion element-arranged side, to form the lenses. The optical information processing device comprises the photoelectric converter, an optical waveguide portion, and drive elements for driving the photoelectric conversion elements. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a photoelectric conversion device, a manufacturing method thereof, and an optical information processing device.

  With the miniaturization of LSI (Large Scale Integration), the speed of a single transistor has increased remarkably. For example, an MPU (Micro Processor Unit) represented by Pentium (registered trademark) manufactured by Intel Corporation has an operating speed of about 3 GHz. Is working with.

  On the other hand, with respect to electrical wiring for transmitting data, the wiring resistance increases due to the scaling law, and therefore the problem of wiring delay is raised. Further, not only the wiring resistance but also the capacitance between the wirings is a big problem. In order to solve these problems, it is necessary to change the physical property values inherent in the material, and from aluminum to copper for wiring, the development of a lower dielectric constant material for the interlayer film between wiring Progressing.

  The above relates to the inside of the LSI, but it is necessary to transmit data to the outside of the LSI, and the same problems as described above are raised. In such a situation, there are technical and capability backgrounds as shown below.

  From a technical point of view, with the progress of semiconductor miniaturization, SOC (Silicon on chip) in which logic and memory (DRAM: Dynamic Random Access Memory) are formed on the same chip is becoming an area where it is difficult to achieve both. , Tend to split logic and memory. From the viewpoint of capability, performance is improved by connecting a plurality of MPUs in parallel.

  That is, the number of connections between LSIs increases as LSIs become smaller and improve performance. As described above, along with the miniaturization of LSI, it is necessary to improve the capability of electric wiring from the viewpoint of materials, but materials that can be used from the viewpoint of mass production are almost applied. Furthermore, in the case of electrical wiring, the attenuation increases as the long-distance transmission and the high-frequency transmission, so that the wiring for connecting LSIs is more severe.

  Various methods have been proposed to solve the transmission rate limiting for connecting the LSIs as described above. Broadly speaking, the life of electric wiring technology, transmission by electromagnetic waves, and transmission by light.

  In order to extend the life of electrical wiring technology, it is effective to use SiP (Silicon in Package) in order to shorten the wiring length, especially chip stacking using 3D mounting technology (for example, IEICE paper C vol. .J87-C No.11 pp.791-801, see November 2004). In the circuit design technique, for example, an impedance mismatch solution method (see Japanese Patent Application Laid-Open No. 2001-111408, for example) is designed so that the wiring distance connecting the impedance mismatch points is an integral multiple of half the signal switching time. ) Etc.

  In transmission by electromagnetic waves, there is a method of forming a transmitting / receiving antenna in a silicon substrate using MEMS (Mechanical Electrical Systems) technology (for example, Rashid, et al, Proceedings of the IEEE 2003 international Inter-connect Technology Conference, pp. 156-158, June 2003.)

  In the development of inter-LSI connection high-speed transmission technology, the optical transmission method is most actively performed. Basic components of an inter-LSI connection structure by optical transmission are a light emitting element, a light receiving element, and an optical waveguide, and many interposers for connecting these optical devices and LSI chips are used (for example, patents described later). Reference 1).

JP 2004-31456 A (page 4, line 47 to page 7, line 24, FIG. 1, FIG. 2, FIG. 3, FIG. 4)

  In the optical system as described above, a problem is light coupling. Since the total light emission angle from the light emitting element (for example, a surface emitting laser) is 25 °, the light beam spreads. For this reason, an optical transmission loss occurs when light emitted from the light emitting element is introduced into the optical waveguide.

  FIG. 5 is a graph showing the relationship between the light loss and the distance between the light emitting element and the optical waveguide when a surface emitting laser of 10 μmΦ is used as the light source. As shown in FIG. 5, if the distance between the light emitting element and the optical waveguide is less than 70 μm, the light loss due to incidence is zero, but if the distance is longer than that, for example, the loss is 50% (about 3 dB) at the distance of 105 μm. In addition, at a distance of 260 μm, the loss is 90% (about 10 dB). In addition, it is very difficult to control the distance between the light emitting element and the optical waveguide at a level of several tens of μm because of the structure of the system.

  In order to solve this problem, a lens is generally used as a technique for preventing light from diffusing, a method of attaching a lens base to a light emitting element by a mounting technique, and an element base on which the light emitting element is formed. There is a method of processing a lens (for example, gallium arsenide) itself.

  However, in the case of the attaching method, the alignment between the light emitting element and the lens base is largely due to mechanical accuracy, and the alignment accuracy is the best on the order of several μm, and the mass production level is on the order of several tens of μm.

  In addition, when processing the element substrate itself, the element substrate such as gallium arsenide is very fragile, so it is very difficult to form a lens shape having a curvature by processing it, and the position of the lens is mechanical accuracy. You will only rely on it. Furthermore, it is very difficult for a lens made of thick gallium arsenide to transmit light.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a photoelectric conversion device that can effectively prevent the diffusion of light and the photoelectric conversion device. An object of the present invention is to provide a method for manufacturing a photoelectric conversion device that can be manufactured, and an optical information processing device to which the photoelectric conversion device is applied.

  That is, the present invention includes a photoelectric conversion element and an element base on which the photoelectric conversion element is provided, and the element base and a lens made of silicon oxide are provided on the side opposite to the photoelectric conversion element. The photoelectric conversion device is bonded through a silicon film, and the light beam component of the emitted light or incident light of the photoelectric conversion element is changed in optical path by the lens.

  The method for manufacturing a photoelectric conversion device according to the present invention includes a step of bonding a lens material made of silicon oxide and an element base of a photoelectric conversion element through a silicon film, and the photoelectric conversion element is attached to the element base. The present invention relates to a method for manufacturing a photoelectric conversion device, which includes a step of providing, and a step of etching a lens material on a surface opposite to the photoelectric conversion element to form a lens.

Furthermore, it comprises a photoelectric conversion device, an optical waveguide unit, and a drive element that drives the photoelectric conversion device, and the photoelectric conversion device comprises:
A photoelectric conversion element; and an element base on which the photoelectric conversion element is provided. The element base and a lens made of silicon oxide are interposed via a silicon film on a surface opposite to the photoelectric conversion element. The optical information processing apparatus is characterized in that an optical path of the light beam component of the emitted light or incident light of the photoelectric conversion element is changed by the lens.

  According to the photoelectric conversion device of the present invention, the element base and the lens made of silicon oxide are bonded via the silicon film, and the light beam component of the emitted light or incident light of the photoelectric conversion element is the lens. Therefore, the emitted light or incident light can be effectively prevented from diffusing.

  According to the method for manufacturing a photoelectric conversion device of the present invention, the step of bonding the lens material made of silicon oxide and the element base of the photoelectric conversion element via the silicon film, and the element base Since the method includes a step of providing a photoelectric conversion element and a step of etching the lens material on the surface opposite to the photoelectric conversion element to form the lens, semiconductor planar technology can be applied. Therefore, for example, alignment can be performed at a CD (Critical Dimension) loss level of a semiconductor process, the optical axis shift between the photoelectric conversion element and the lens can be almost ignored, and an alignment allowable value (margin) is conventionally known. Since it is larger than that of the pasting method according to the example, the yield can be improved.

  Also, in the method of processing a lens of the element substrate itself according to the conventional example, the element substrate such as gallium arsenide is very fragile, and it is very difficult to process this to form a lens shape having a curvature. In contrast, according to the present invention, since the lens is formed by etching the lens material made of silicon oxide, it can be easily manufactured by a semiconductor process.

  Furthermore, as described above, the photoelectric conversion device of the present invention can effectively prevent the light beam component of the emitted light or the incident light from diffusing. Therefore, the optical information processing apparatus of the present invention to which this photoelectric conversion device is applied can significantly reduce the optical loss when introducing the emitted light into the optical waveguide unit, for example, and the system malfunctions. Effects such as a reduction in system speed due to reduction and error rate reduction can be expected.

In the present invention, the silicon oxide may be glass containing an additive in addition to SiO ₂ .

  Moreover, it is preferable that a light emitting element array or a light receiving element array as the photoelectric conversion element is provided on the element base.

  Further, a silicon substrate is directly bonded to the lens material, and the silicon substrate is partially removed in the thickness direction in the bonded body to be processed into a thin silicon film, and an element substrate material layer (on the silicon film) For example, gallium arsenide) is preferably formed.

  Furthermore, it is preferable to epitaxially grow the element base material on the silicon film via the buffer layer. The photoelectric conversion device according to the present invention thus obtained is such that the element base and the silicon film are bonded via the buffer layer, and the light beam component of the emitted light or incident light is converted into parallel light by the lens. Or it is condensed. Since the lattice constant between silicon and gallium arsenide has a difference of about 4%, it is difficult to perform epitaxial growth. In order to alleviate this difference in lattice constant, it is desirable to provide the buffer layer. As the buffer layer, STO (strontium, titanium, oxide) or the like can be used. Thereby, the element base material layer made of gallium arsenide can be formed on the silicon film.

  In the optical information processing apparatus according to the present invention, it is preferable that the lens and the light incident portion or the light emitting portion of the optical waveguide portion are aligned on a common optical axis.

First Embodiment FIG. 1 is a schematic view of a photoelectric conversion device according to the present invention. FIG. 1A is a schematic cross-sectional view of a photoelectric conversion device according to the present invention, and FIG. 1B is a schematic plan view seen from the A direction of FIG.

  As shown in FIG. 1, a photoelectric conversion device 1 according to the present invention includes a photoelectric conversion element 2 and an element base (for example, gallium arsenide) 3 provided with the photoelectric conversion element 2. On the opposite surface side, the element base 3 and the lens 4 made of silicon oxide are bonded via the silicon film 5, and the light beam component of the emitted light or incident light of the photoelectric conversion element 2 is changed in optical path by the lens 4. The

  Moreover, it is preferable that the light emitting element array or the light receiving element array as the photoelectric conversion element 2 is provided on the element base 3.

  Further, the element substrate 3 such as gallium arsenide and the silicon film 5 are bonded via a buffer layer (not shown), and the light beam component of the emitted light or incident light is collimated or condensed by the lens 4. It is desirable. Since the lattice constant between silicon and gallium arsenide has a difference of about 4%, it is difficult to perform epitaxial growth. In order to alleviate this difference in lattice constant, it is desirable to provide the buffer layer. As the buffer layer, STO (strontium, titanium, oxide) or the like can be used.

  According to the photoelectric conversion device 1 according to the present invention, the element base 3 and the lens 4 made of silicon oxide are bonded via the silicon film 5 on the side opposite to the photoelectric conversion element 2, and the emitted light or Since the optical path of the light beam component of the incident light is changed by the lens 4, it is possible to effectively prevent the emitted light or the incident light from diffusing.

  Below, an example of the manufacturing method of the photoelectric conversion apparatus 1 based on this invention is demonstrated in order of a process with reference to FIG. 2, FIG. Here, an example in which a light emitting element (for example, a surface emitting laser) is applied as the photoelectric conversion element will be described. However, the same applies to a case where a light receiving element is provided as the photoelectric conversion element.

First, as shown in FIG. 2A, a silicon substrate 5a is directly bonded to a lens material 4a made of silicon oxide. This bonding requires precise surface control and temperature control. That is, the bonding of the lens material 4a and the silicon substrate 5a is performed by a chemical reaction at the interface of the substrate contact portion. The bonding between the hydroxyl groups starts with bonding between the hydroxyl groups on the surface, and heat treatment is applied to bond the hydroxyl groups. It becomes a siloxane bond of Si and releases water (H ₂ O).

  Then, as shown in FIG. 2B, the silicon substrate 5a in the joined body 6 is partially removed in the thickness direction and processed into a thin silicon film 5. More specifically, the silicon substrate 5a is cut to a thickness of 50 to 200 nm. Further, the surface of the silicon substrate 5a needs to be a mirror surface and a clean state in order to epitaxially grow an element base material (for example, gallium arsenide) in the next step. Therefore, it is preferable to finally perform a polishing process such as CMP (Chemical Mechanical Polishing).

  Next, as shown in FIG. 2C, an element base material layer (element base, eg, gallium arsenide) 3 is formed on the silicon film 5. More specifically, the element base material is heteroepitaxially grown on the silicon film 5 via a buffer layer (not shown). Since the lattice constant between silicon and gallium arsenide has a difference of about 4%, it is difficult to perform epitaxial growth. In order to alleviate this difference in lattice constant, it is desirable to provide the buffer layer. As the buffer layer, STO (strontium, titanium, oxide) or the like can be used. Thereby, the element substrate 3 made of gallium arsenide can be formed on the silicon film 5.

  The element substrate material is not limited to gallium arsenide, but is the most common material in the current technology.

  Next, as shown in FIG. 2D, a light emitting element (for example, a surface emitting laser) 2 as the photoelectric conversion element is provided on the element base 3. The surface emitting laser 2 has already been commercialized, and a standard process can be applied to the production thereof. The basic structure consists of an electrode-conductive reflective layer (n or p) -clad layer-active layer-clad layer-conductive reflective layer (p or n) -electrode.

  Next, as shown in FIG. 2 (e), a resist 7 is applied on the surface of the lens material 4 a opposite to the light emitting element 2. The material, film thickness, coating conditions, and the like of the resist 7 depend on the next process etching and the desired lens shape.

  Next, as shown in FIGS. 3F and 3G, the resist 7 is exposed and developed in a lithography process using a grating mask 8. By using the grating mask 8, the exposed portion 9 can be formed into a lens shape having a curvature. Here, the positioning of the light emitting element 2 formed on the element base 3 and the exposure portion 9 of the resist 7 uses the lens material 4a made of silicon oxide having high light transmittance. The light emitting part of the light emitting element 2 can be recognized by such an apparatus. That is, lithography for lens formation can be performed using this light emitting portion as an alignment mark.

  Next, as shown in FIG. 3H, the entire surface of the resist mask (exposed portion) 9 produced as described above is etched back by anisotropic dry etching to etch the lens material 4a. The lens 4 is formed.

  As described above, the photoelectric conversion device 1 according to the present invention can be manufactured.

  The most common method of changing the optical path of the light beam component according to the conventional example is a method of attaching a lens base to a light emitting element by a mounting technique. However, in this case, some kind of adhesive is required. However, if the thermal expansion coefficient between the light emitting element and the lens base is not fully taken into account, a problem of peeling occurs. In addition, it is necessary to sufficiently consider the light transmittance of the adhesive.

  On the other hand, according to the present embodiment, the junction between the element base 3 on which the light emitting element 2 is formed and the silicon film 5 is a bond between atoms through the thin buffer layer, and the silicon film 5 and the lens 4 made of silicon oxide are joined by a chemical reaction at the interface of the contact portion. Therefore, their adhesion is strong and there is no need to worry about peeling.

  Further, in the case of the method of attaching the lens base according to the conventional example, the alignment between the light emitting element and the lens base largely depends on the mechanical accuracy. On the other hand, according to the manufacturing method based on this invention, the light emitting element 2 and the lens 4 can be formed with a semiconductor planar technique using the lens raw material 4a which consists of silicon oxide with high light transmittance. That is, a stepper or a scanner that has a proven record in semiconductor process technology can be used, and the alignment can be set to a CD (Critical Dimension) loss level of the semiconductor process. For this reason, the optical axis shift between the light emitting element 2 and the lens 4 is almost negligible.

  Further, in the present embodiment, since the allowable alignment value (margin) between the light emitting element 2 and the lens 4 is larger than that of the pasting method according to the conventional example, a significant effect is also obtained from the viewpoint of yield.

  Further, in the method of processing the lens of the element substrate itself according to the conventional example, the element substrate such as gallium arsenide is very fragile, and it is very difficult to process the element substrate to form a lens having a curvature. On the other hand, according to the present invention, since the lens 4 is formed by etching the lens material 4a made of silicon oxide, it can be easily manufactured by a semiconductor process.

Second Embodiment FIG. 4 is a schematic sectional view of an example of an optical information processing apparatus according to the present invention. As shown in FIG. 4, an optical information processing apparatus 10 according to the present invention includes a photoelectric conversion apparatus 1 according to the present invention, an optical waveguide 11 as the optical waveguide unit, and a drive element 12 that drives the photoelectric conversion element. It consists of.

  In the photoelectric conversion device 1 according to the present invention, a light emitting element array 2a or a light receiving element array 2b as the photoelectric conversion elements is provided on an element base 3.

  The photoelectric conversion device 1 according to the present invention is mounted on an interposer 13 with solder 14, and a drive element 12 is mounted on the surface of the interposer 13 opposite to the photoelectric conversion device 1. The light emitting element 2a, the light receiving element 2b, and the driving element 12 are electrically connected through the through electrode 15 of the interposer 13. Although not shown, the interposer 13 is formed with active elements, wirings, etc., and the elements and chips mounted on the interposer 13 are connected to each other. Furthermore, the optical waveguide 11 is mounted on, for example, the printed wiring board 16.

  In addition, the lens 4 and the light incident portion or the light emitting portion of the optical waveguide 11 are aligned on a common optical axis.

  The optical waveguide 11 as the optical waveguide portion is not particularly limited, and a conventionally known one can be used. For example, the optical waveguide 11 includes clads 17a and 17b and a core 18 sandwiched between the clads 17a and 17b. In addition, the lens member 19 is provided in each of the light incident portion and the light emitting portion. Further, the light incident end face and the light exit end face of the optical waveguide 11 are formed on a 45 ° mirror surface.

  In the mechanism of the optical information processing apparatus 10 according to the present invention, emitted light (for example, laser light) that is signal-modulated by the light emitting element 2a as the photoelectric conversion element is converted into parallel light through a lens 4 made of silicon oxide. The signal light is further collected by a lens member 19 formed at the light incident portion of the optical waveguide 11 and is effectively incident on the core 18 of the optical waveguide 11. The incident light is guided through the optical waveguide 11, converted into parallel light by the lens member 19 formed at the light emitting portion of the optical waveguide 11, and then emitted from the optical waveguide 11. The emitted light is collected by the lens 4 made of silicon oxide and is effectively received by the light receiving element 2b. Thus, an optical transmission / communication system can be constructed using the optical waveguide 11 as a transmission path for signal-modulated laser light or the like.

  The most common optical path change of the light beam component according to the conventional example is a method in which the lens base is attached to the light emitting element by a mounting technique, but the mounting alignment accuracy is several μm even in consideration of the throughput. It is an order. In addition, since the mounting is three-dimensional, the mounting variation of only the lens is the cube of the variation value. Furthermore, in order to mount a plurality of points, it is necessary to consider alignment with the front and rear mounting parts. That is, the yield of the final product is improved by reducing the number of mounting points as much as possible.

  On the other hand, according to this Embodiment, since the number of mounting components is reduced by using the photoelectric conversion apparatus 1 based on this invention, a yield can be improved more.

  Further, as in the conventional example, some kind of guide is required to mount the lens base body. However, according to the present embodiment, since the photoelectric conversion device 1 according to the present invention is used, the guide formation or attachment process is omitted. can do.

  Furthermore, as described above, the photoelectric conversion device 1 of the present invention can effectively prevent the light beam component of the emitted light or the incident light from diffusing. Therefore, the optical information processing apparatus 10 of the present invention to which the photoelectric conversion apparatus 1 is applied can significantly reduce the optical loss when introducing the emitted light into the optical waveguide 11, for example. The effect of improving the speed of the entire system by reducing the operation and error rate can be expected.

  Next, the total advantage of the system will be described. First, since the number of mounting points decreases, the system manufacturing TAT (Turn around time) becomes faster.

  In addition, since the number of mounting points decreases, it becomes easy to optimize the stress balance of the entire system, and a highly reliable system can be constructed.

  Moreover, since the optical coupling loss from the light emitting element 2a as the photoelectric conversion element to the optical waveguide 11 can be reduced, the output of the light emitting element 2a can be reduced. That is, the power consumption of the driver that drives the light emitting element 2a can be reduced.

  Moreover, since the optical coupling loss from the light emitting element 2a to the optical waveguide 11 can be reduced and the emitted light can be efficiently introduced into the optical waveguide 11, the photoelectric conversion efficiency of the light receiving element 2b is increased, and accordingly, Since the current value output from the light receiving element 2b increases, the power consumption of the amplifier that amplifies the current can be reduced.

  Furthermore, since the optical coupling loss from the light emitting element 2a to the optical waveguide 11 can be reduced and light can be efficiently introduced into the optical waveguide 11, the sensitivity of the light receiving element on the output side can be reduced (decrease in specifications). Cost) on the light receiving side.

  As mentioned above, although embodiment of this invention was described, the above-mentioned example can be variously modified based on the technical idea of this invention.

  For example, although an example in which the optical waveguide is used as the optical waveguide unit has been described, for example, an optical fiber or the like is also applicable.

  Moreover, the photoelectric conversion device according to the present invention is applicable not only to the application of optical transmission between LSI chips but also to all systems using light.

It is the schematic of the photoelectric conversion apparatus based on this invention by 1st Embodiment. It is a schematic sectional drawing which shows an example of the manufacturing method of the photoelectric conversion apparatus based on this invention in process order. It is a schematic sectional drawing which shows an example of the manufacturing method of the photoelectric conversion apparatus based on this invention in process order. It is a schematic sectional drawing of the optical information processing apparatus based on this invention by 2nd Embodiment. It is a graph which shows the relationship between the distance from the light emission part to an optical waveguide, and optical loss by a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Photoelectric conversion apparatus, 2 ... Photoelectric conversion element, 2a ... Light emitting element array (light emitting element),
2b ... light receiving element array (light receiving element), 3 ... element base, 4 ... lens, 4a ... lens material,
5 ... silicon film, 5a ... silicon substrate, 6 ... joined body, 7 ... resist,
DESCRIPTION OF SYMBOLS 8 ... Grating mask, 9 ... Exposure part, 10 ... Optical information processing apparatus, 11 ... Optical waveguide,
12 ... Drive element, 13 ... Interposer, 14 ... Solder, 15 ... Penetration electrode,
16 ... Printed wiring board, 17a, 17b ... Cladding, 18 ... Core, 19 ... Lens member

Claims (11)

  A photoelectric conversion element and an element base provided with the photoelectric conversion element are provided, and the element base and a lens made of silicon oxide are bonded via a silicon film on the side opposite to the photoelectric conversion element. A photoelectric conversion device in which the light beam component of the emitted light or incident light of the photoelectric conversion element is optically changed by the lens.   2. The photoelectric conversion according to claim 1, wherein the element substrate and the silicon film are bonded via a buffer layer, and the light beam component of the emitted light or incident light is collimated or condensed by the lens. apparatus.   The photoelectric conversion apparatus according to claim 1, wherein a light emitting element array or a light receiving element array as the photoelectric conversion element is provided on the element base.   2. A method of manufacturing a photoelectric conversion device according to claim 1, wherein a lens material made of silicon oxide and an element base of a photoelectric conversion element are joined via a silicon film, and the photoelectric conversion element is attached to the element base. And a step of etching the lens material on the side opposite to the photoelectric conversion element to form a lens.   A silicon substrate is directly bonded to the lens material, and the silicon substrate is partially removed in the thickness direction in the bonded body to be processed into a thin silicon film, and an element base material layer is formed on the silicon film. The manufacturing method of the photoelectric conversion apparatus described in Claim 4.   The method for manufacturing a photoelectric conversion device according to claim 5, wherein an element base material is epitaxially grown on the silicon film via a buffer layer.   The manufacturing method of the photoelectric conversion apparatus of Claim 4 which provides the light emitting element array or light receiving element array as the said photoelectric conversion element in the said element base | substrate. A photoelectric conversion device, an optical waveguide unit, and a drive element that drives the photoelectric conversion device, the photoelectric conversion device,
A photoelectric conversion element; and an element base on which the photoelectric conversion element is provided. The element base and a lens made of silicon oxide are interposed via a silicon film on a surface opposite to the photoelectric conversion element. The optical information processing apparatus is characterized in that the optical path of the light beam component of the emitted light or incident light of the photoelectric conversion element is changed by the lens.   The optical information according to claim 8, wherein the element substrate and the silicon film are bonded via a buffer layer, and the light beam component of the emitted light or incident light is collimated or condensed by the lens. Processing equipment.   The optical information processing apparatus according to claim 8, wherein a light emitting element array or a light receiving element array as the photoelectric conversion element is provided on the element base.   The optical information processing apparatus according to claim 8, wherein the lens and the light incident portion or the light emitting portion of the optical waveguide portion are aligned on a common optical axis.

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