JP2009054814A - Electronic element - Google Patents
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- JP2009054814A JP2009054814A JP2007220476A JP2007220476A JP2009054814A JP 2009054814 A JP2009054814 A JP 2009054814A JP 2007220476 A JP2007220476 A JP 2007220476A JP 2007220476 A JP2007220476 A JP 2007220476A JP 2009054814 A JP2009054814 A JP 2009054814A
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Abstract
Description
本発明は、半導体基板上に水素吸蔵性のある金属からなるショットキー電極を有する電子素子に関する。 The present invention relates to an electronic device having a Schottky electrode made of a metal having a hydrogen storage property on a semiconductor substrate.
従来、ダイオード及びＦＥＴにおいては、高い仕事関数を持つＰｔ等の水素吸蔵性のある金属からなるショットキー電極として直接、半導体上に作製する構造の素子が主に使用されている。しかしながら、このような構造の素子は温度や周辺の雰囲気に対して、特性が大きく変動することが問題になっている。 Conventionally, in a diode and FET, an element having a structure directly formed on a semiconductor is mainly used as a Schottky electrode made of a metal having a high work function such as Pt or the like and having a hydrogen storage property. However, there is a problem that the characteristics of the element having such a structure greatly vary with respect to temperature and the surrounding atmosphere.
本発明はこのような問題を解決することを目的とする。 The present invention aims to solve such problems.
本発明１の電子素子は、上記目的を達成するために、半導体基板とショットキー電極との間に窒化シリコン（ＳｉｘＮｙ）薄膜が設けてあることを特徴とする。
本発明２は、発明１の電子素子において、前記窒化シリコン（ＳｉｘＮｙ）薄膜の厚さが０．５ｎｍから１０ｎｍであることを特徴とする。
In order to achieve the above object, the electronic device of the present invention 1 is characterized in that a silicon nitride (SixNy) thin film is provided between the semiconductor substrate and the Schottky electrode.
According to a second aspect of the present invention, in the electronic device of the first aspect, the silicon nitride (SixNy) thin film has a thickness of 0.5 nm to 10 nm.
本発明は、上記構成により金属／絶縁膜／半導体構造を導入し、さらには絶縁膜の種類を最適化することによって、素子の動作雰囲気や温度に対して、素子特性の変動を抑えることができた。
その結果、
１）雰囲気ガス（特に水素）に依存した素子特性の変動を抑える、
２）高温動作時にショットキー電極からの電流リークを減少させることで素子の安定化に貢献する、という二点の効果を実現することができた。
In the present invention, by introducing a metal / insulating film / semiconductor structure with the above configuration and further optimizing the type of insulating film, fluctuations in element characteristics can be suppressed with respect to the operating atmosphere and temperature of the element. It was.
as a result,
1) Suppress fluctuations in device characteristics depending on the atmospheric gas (especially hydrogen).
2) The two effects of contributing to the stabilization of the device by reducing the current leakage from the Schottky electrode during high temperature operation could be realized.
１）ショットキーダイオードをＭＩＳ構造化すると、ショットキー電極からのリーク電流を抑制可能なために、高温などの過酷な環境においても、素子を安定に動作することができることは一般的に知られている。従って、実施例を示す図１の構造のデバイスが、実施例図２、３、表１、２、３に示すように、高い雰囲気安定特性を持つと同時に、高温において、安定的なデバイス動作を可能にする。 1) It is generally known that when a Schottky diode has a MIS structure, a leak current from a Schottky electrode can be suppressed, so that the element can be stably operated even in a severe environment such as a high temperature. Yes. Therefore, the device having the structure of FIG. 1 showing the embodiment has high atmospheric stability characteristics as shown in FIGS. 2 and 3 and Tables 1, 2, and 3, and at the same time, stable device operation at a high temperature. enable.
２）実施例図１はショットキーダイオードのＭＩＳ構造化に関するものであるが、ＨＥＭＴ型ＦＥＴにおいて、ゲート電極をＭＩＳ構造化した際にも、同様の効果が予測できる。すなわち、本技術をＨＥＭＴに適用することで、高い雰囲気安定特性を持つと同時に、高温において、安定動作可能なデバイスを実現する。 2) Embodiment FIG. 1 relates to the MIS structure of a Schottky diode, but the same effect can be predicted when the gate electrode is formed in the MIS structure in the HEMT type FET. That is, by applying the present technology to the HEMT, it is possible to realize a device that has high atmospheric stability characteristics and can be stably operated at a high temperature.
３）実施例図１は、半導体材料として窒化物系半導体材料（ＧａＮ）を使用している。しかしながら、半導体材料として他の窒化物系半導体材料（ＡｌＧａＮ， ＡｌＩｎＮなど）やＳｉＣ， Ｓｉなどの窒化物系以外の半導体材料に対しても、同様の効果が予測できる。 3) Example FIG. 1 uses a nitride-based semiconductor material (GaN) as a semiconductor material. However, the same effect can be expected for other nitride semiconductor materials (AlGaN, AlInN, etc.) as semiconductor materials and semiconductor materials other than nitrides such as SiC, Si.
４）実施例は、電極金属としてＰｔを使用している。しかしながら、Ｐｄなどの高仕事関数を持つ水素吸蔵性のある金属は、同様の効果が予測できる。
５）本発明を構成する絶縁膜は、厚さが１０ｎｍ以下０．５ｎｍ以上であるのが好ましい。これは、絶縁膜の厚さが１０ｎｍ以上の場合、素子に流れる電流が小さくなるので望ましくない。また、絶縁膜の厚さが０．５ｎｍ以下の場合、絶縁膜による素子特性安定性の効果が薄れてしまうためである。実施例では、ショットキー電極、オーミック電極はＥＢ蒸着法で作成したが、スパッタリング法での電極製造も可能である。
4) The example uses Pt as the electrode metal. However, the same effect can be predicted for a metal having a high work function such as Pd and having a hydrogen storage property.
5) The insulating film constituting the present invention preferably has a thickness of 10 nm or less and 0.5 nm or more. This is not desirable when the thickness of the insulating film is 10 nm or more because the current flowing through the element becomes small. Further, when the thickness of the insulating film is 0.5 nm or less, the effect of device characteristic stability by the insulating film is diminished. In the examples, the Schottky electrode and the ohmic electrode are formed by the EB vapor deposition method, but the electrode can be manufactured by the sputtering method.
以下の、本実施例の構造および製造方法を詳しく説明する。図１に示す構造のデバイスは、厚さ０．４３ｍｍのｃ面サファイア基板上にＭＯＣＶＤによって製膜された２．０μｍの厚さのｎ型ＧａＮを半導体材料として用いる。この半導体材料上に、フォトリソグラフィーとＥＢ蒸着装置を用いてＴｉ（２０ｎｍ）／Ａｌ（１００ｎｍ）／Ｐｔ（４０ｎｍ）／Ａｕ（１００ｎｍ）からなるオーミック電極を形成した後に、窒素雰囲気中で７５０℃、３０秒の電極シンター処理を行った。次に、ＲＦスパッタ装置を用いて半導体材料上に１０ｎｍのＳｉ3Ｎ4を形成した。この際、アルゴンを１０ｓｃｃｍ流し、チャンバーの圧力を３ｍＴｏｒｒに保ち、プラズマのパワーを１００Ｗにして、１０分間の蒸着を行った。その後、フォトリソグラフィーとＥＢ蒸着装置を用いてＰｔ（２５ｎｍ）からなるショットキー電極を形成した。ショットキー電極とオーミック電極はリング状に配置されており、ショットキー電極の直径は３００μｍ、ショットキー電極とオーミック電極との距離は２０μｍである。 The structure and manufacturing method of the present embodiment will be described in detail below. The device having the structure shown in FIG. 1 uses, as a semiconductor material, n-type GaN having a thickness of 2.0 μm formed by MOCVD on a c-plane sapphire substrate having a thickness of 0.43 mm. On this semiconductor material, an ohmic electrode made of Ti (20 nm) / Al (100 nm) / Pt (40 nm) / Au (100 nm) is formed using photolithography and an EB vapor deposition apparatus, and then at 750 ° C. in a nitrogen atmosphere. An electrode sintering treatment for 30 seconds was performed. Next, 10 nm Si 3 N 4 was formed on the semiconductor material using an RF sputtering apparatus. At this time, argon was allowed to flow at 10 sccm, the pressure in the chamber was kept at 3 mTorr, the plasma power was 100 W, and deposition was performed for 10 minutes. Thereafter, a Schottky electrode made of Pt (25 nm) was formed using photolithography and an EB vapor deposition apparatus. The Schottky electrode and the ohmic electrode are arranged in a ring shape. The diameter of the Schottky electrode is 300 μm, and the distance between the Schottky electrode and the ohmic electrode is 20 μm.
図１に示すように、窒化シリコン（ＳｉｘＮｙ）を取り入れたＭＩＳ型ダイオード構造を用いることで、図２、３及び表１、２、３に示すように、素子特性の雰囲気ガス（本実験では水素ガス）依存性を完全に除去することができた。前記本実施例による水素感度の検査結果を図２、３及び表１、２、３に示す。なお、表１は図２、３を作成した測定結果から、表２は図２を作成した測定結果から、表３は図３を作成した測定結果から作成した。感度検査は以下の条件で行った。ステンレス製チャンバー内に素子を入れ、室温において、窒素希釈の１％水素ガスを２００ｍｌ／ｍｉｎの流量で２５分流して、素子の電流−電圧特性の変化をＫｅｉｔｈｌｅｙ ２６０２ ｓｙｓｔｅｍ ｓｏｕｒｃｅ ｍｅｔｅｒを用いて計測した。
表２（図２を作成した測定結果から作成）および図２から、通常の構造のショットキー接合は、水素雰囲気下においては、電流−電圧特性が大きく変化するのに対して、図１の構造を用いると、表３（図３を作成した測定結果から作成）および図３に示すように、水素雰囲気下においても、電流−電圧特性がほとんど変化しない。
As shown in FIG. 1, by using a MIS type diode structure incorporating silicon nitride (SixNy), as shown in FIGS. (Gas) dependence could be removed completely. 2 and 3 and Tables 1, 2, and 3 show the test results of the hydrogen sensitivity according to the present example. Table 1 was created from the measurement results created in FIGS. 2 and 3, Table 2 was created from the measurement results created in FIG. 2, and Table 3 was created from the measurement results created in FIG. The sensitivity test was performed under the following conditions. The element was placed in a stainless steel chamber, and at room temperature, 1% hydrogen gas diluted with nitrogen was allowed to flow at a flow rate of 200 ml / min for 25 minutes, and changes in the current-voltage characteristics of the element were measured using a Keithley 2602 system source meter. .
From Table 2 (created from the measurement results created in FIG. 2) and FIG. 2, the Schottky junction of the normal structure has a large change in current-voltage characteristics in a hydrogen atmosphere, whereas the structure of FIG. As shown in Table 3 (created from the measurement results created in FIG. 3) and FIG. 3, the current-voltage characteristics hardly change even in a hydrogen atmosphere.
実用上、電子デバイスの特性変化が生じることは望ましくない。特に、素子温度および動作雰囲気に対して、特性変化が生じると、システムの信頼性の点から大きな問題となりうる。本発明は、電極と半導体材料の間に窒化シリコン（ＳｉｘＮｙ）薄膜を挿入することで上記の問題を一度に解決することが可能である。 In practice, it is not desirable that the characteristics of the electronic device change. In particular, if a characteristic change occurs with respect to the element temperature and the operating atmosphere, it can be a serious problem in terms of system reliability. The present invention can solve the above problem at a time by inserting a silicon nitride (SixNy) thin film between the electrode and the semiconductor material.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0837282A (en) * | 1994-07-21 | 1996-02-06 | Matsushita Electron Corp | Capacitive device, semiconductor device and manufacture thereof |
| JPH11135736A (en) * | 1997-10-31 | 1999-05-21 | Nec Corp | Semiconductor device and its manufacture |
| JP2000174285A (en) * | 1998-12-07 | 2000-06-23 | Nec Corp | Field effect transistor |
| JP2002299642A (en) * | 2001-03-29 | 2002-10-11 | Toshiba Corp | Semiconductor element and its fabricating method |
| WO2006131968A1 (en) * | 2005-06-09 | 2006-12-14 | Fujitsu Limited | Semiconductor device and method for fabricating same |
| JP2007129166A (en) * | 2005-11-07 | 2007-05-24 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
| WO2007081528A2 (en) * | 2006-01-10 | 2007-07-19 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
| JP2009042213A (en) * | 2007-07-17 | 2009-02-26 | National Institute For Materials Science | Gas sensor element |
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Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0837282A (en) * | 1994-07-21 | 1996-02-06 | Matsushita Electron Corp | Capacitive device, semiconductor device and manufacture thereof |
| JPH11135736A (en) * | 1997-10-31 | 1999-05-21 | Nec Corp | Semiconductor device and its manufacture |
| JP2000174285A (en) * | 1998-12-07 | 2000-06-23 | Nec Corp | Field effect transistor |
| JP2002299642A (en) * | 2001-03-29 | 2002-10-11 | Toshiba Corp | Semiconductor element and its fabricating method |
| WO2006131968A1 (en) * | 2005-06-09 | 2006-12-14 | Fujitsu Limited | Semiconductor device and method for fabricating same |
| JP2007129166A (en) * | 2005-11-07 | 2007-05-24 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
| WO2007081528A2 (en) * | 2006-01-10 | 2007-07-19 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
| JP2009522823A (en) * | 2006-01-10 | 2009-06-11 | クリー， インコーポレイティッド | Environmentally robust passivation structure for high voltage silicon carbide semiconductor devices |
| JP2009042213A (en) * | 2007-07-17 | 2009-02-26 | National Institute For Materials Science | Gas sensor element |
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