JP2009046710A - Continuous manufacturing apparatus of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a continuous manufacturing apparatus of semiconductor devices, which can transfer a belt-shaped substrate while pressing the belt-shaped substrate against rollers with sufficiently large force even if a non-magnetic belt-like substrate is used, and which can manufacture high quality semiconductor devices by making the gap of a gas gate part small and preventing the mixing of gas between film deposition chambers. <P>SOLUTION: In the continuous manufacturing apparatus of semiconductor devices, having a belt-shaped substrate transfer means for transferring a belt-shaped substrate 4 to next film deposition chamber 20 by the rotation of a plurality of rollers 2 arranged in the longitudinal direction of the belt-shaped substrate 4 in each of gas gates 10 connecting between a plurality of film deposition chambers 20, an electrode is arranged at the inside of each gas gate 10 in such a manner that the electrode is put close to the belt-shaped substrate 4 being transferred through the gas gate 10, a dielectric 1 is provided between the electrode and the belt-shaped substrate 4, and a direct current voltage or alternating current voltage is applied to the electrode. Thereby, the belt-shaped substrate 4 is pressed against the rollers 2 while using a non-magnetic belt-shaped substrate by the cooperation of the electrode and the dielectric 1, and the belt-shaped substrate 4 is supported in a state that the gap of the gas gate 10 part is made small. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device continuous manufacturing apparatus for continuously forming a large-area semiconductor thin film element used for a solar cell or the like on a strip substrate.

As a method for depositing a plurality of layers on a long strip substrate, a roll-to-roll method is often used in which a plurality of layers are deposited one after another on a strip substrate transported between deposition chambers. . As an example of such a roll-to-roll system, as in Patent Document 2 (US Pat. No. 4,400,409), a solar substrate is formed by plasma CVD using a roll-to-roll system on a belt-like substrate. A method of manufacturing a battery thin film element is disclosed.
In this method, a plurality of film forming chambers equipped with glow discharge devices are connected by a structure called a gas gate, and the belt-like substrate is successively transferred so as to sequentially pass through each film forming chamber. The semiconductor layer is formed on the surface of the belt-like substrate.

The gas gate is divided between the film forming chambers by a slit-like passage, and a scavenging gas such as H ₂ or Ar is supplied in the middle of the passage, or the gas is exhausted in the middle of the passage, The gas components in adjacent film forming chambers are prevented from diffusing and mixing with each other.
Since the flow rate of the gas flowing through a narrow gap such as the gas gate is proportional to the cube of the gap, the gap is desirably as small as possible in order to suppress the supply amount of scavenging gas or the exhaust amount from the gas gate.
Therefore, in Patent Document 3 (US Pat. No. 4,462,332), in order to make one side of the belt-like substrate closely contact with the wall surface of the gas gate to facilitate the management of the gap, the magnetic substrate is closely attached to the gas gate wall surface by magnetic force. And a method of transporting the magnetic substrate while sliding it on the wall surface is disclosed. With such a configuration, since the position of the substrate is stabilized, the gap between the gas gates can be narrowed even in a substrate where wrinkles and undulations exist.
However, the method of Patent Document 3 has a problem that the tension necessary for conveyance increases due to the frictional force generated between the belt-like substrate and the wall surface of the gas gate, and defects in the deposited film due to deformation of the belt-like substrate occur. .

As one of solutions for such a problem, Patent Document 1 (Patent No. 2,975,151) is provided.
FIG. 10 is a vertical cross-sectional view of a gas gate portion of a continuous semiconductor device manufacturing apparatus disclosed in Patent Document 1. In FIG. As shown in FIG. 10, a plurality (four in this example) of strip-shaped substrates 4 are arranged in the longitudinal direction of the strip-shaped substrate 4 in the gas gate 10 connecting the plurality of film forming chambers 20, 20. The belt 2 is conveyed by the rotation of the roller 2, and the belt-like substrate 4 made of a magnetic material is pressed against the roller 2 by the magnetic force of the magnet 30, thereby enabling conveyance with less friction. Reference numeral 6 denotes a scavenging gas supply port.

Japanese Patent No. 2,975,151 U.S. Pat. No. 4,400,409 U.S. Pat. No. 4,462,332

  That is, in Patent Document 1 (Japanese Patent No. 2,975,151), the belt-like substrate 4 made of a magnetic material is pressed against the roller 2 by the magnetic force of the magnet 30, thereby enabling conveyance with less friction. In the method using the magnetic force of 30, the belt-like substrate 4 cannot be pressed against the roller 2 with a sufficiently large force. Therefore, there is a limit in reducing the gap between the gas gate portions.

  The present invention has been made in view of such a situation, and even if a non-magnetic band-shaped substrate is used, the present invention can convey the band-shaped substrate while pressing it against a roller with a sufficiently large force. It is an object of the present invention to provide a continuous semiconductor device manufacturing apparatus capable of reducing the gap between the film forming chambers and preventing gas mixing between film forming chambers and manufacturing high-quality semiconductor elements.

In order to solve the above-described problems of the prior art, the present invention provides a gas gate that connects a plurality of film forming chambers by rotating a plurality of belt-like substrates arranged in the longitudinal direction of the belt-like substrate. In a continuous manufacturing apparatus of a roll-to-roll type semiconductor device having a belt-shaped substrate transport means for transporting and transferring to the next film formation chamber, an electrode is disposed in the vicinity of the belt-shaped substrate transported in the gas gate. Arranged inside the gas gate, a dielectric is installed between the electrode and the strip substrate, and a DC or AC voltage is applied to the electrode to cooperate with the electrode and the dielectric to form the strip substrate. It is configured to support.
Specifically, the present invention is preferably configured as follows.
The dielectric is inserted into the outer periphery of a rotatable roller made of a hollow cylinder, the electrode is connected to a rotating shaft electrically connected to the roller, and the rotating shaft is supported by the gas gate by a bearing, Electric power from the electrode is transmitted to the dielectric via the rotating shaft, the bearing and the roller.

In the present invention, the roller is preferably configured as follows.
(1) The roller is divided into two in the axial direction through an insulator, and each roller is connected to a rotation shaft, and the electrodes are connected to the rotation shafts, respectively.
(2) The dielectric is inserted into an outer periphery of a rotatable roller made of a hollow cylinder, the roller is formed integrally with the rotating shaft, the electrode is connected to a roller integrated with the rotating shaft, A roller is supported by the gas gate with a bearing, and electric power from the electrode is connected to a roller integral with the rotating shaft via a slip ring, and is transmitted to the dielectric via the roller. .
(3) An insulator formed along the circumferential direction is provided inside the roller, and grooves are formed in the outer periphery of the insulator at regular intervals to open on the inner peripheral surface of the dielectric. A positive electrode and a negative electrode are alternately embedded along the circumferential direction so as to be in contact with the inner periphery of the dielectric.

  The present invention also provides a semiconductor device comprising a strip-shaped substrate transport means for transporting a strip-shaped substrate in the longitudinal direction of the strip-shaped substrate and transferring it to the next deposition chamber in a gas gate connecting a plurality of deposition chambers. In the continuous manufacturing apparatus, the dielectric that contacts the belt-like substrate conveyed in the gas gate can be rotated independently, and the positive electrode and the negative electrode fixed to the fixing member are brought into contact with the inner periphery of the dielectric. It is composed.

  Furthermore, the present invention provides a semiconductor device comprising a strip-shaped substrate transport means for transporting a strip-shaped substrate in the longitudinal direction of the strip-shaped substrate and transferring it to the next deposition chamber in a gas gate connecting a plurality of deposition chambers. In the continuous manufacturing apparatus, a groove is provided in the gas gate, two auxiliary rollers are provided in parallel in the groove, and a dielectric is installed on the auxiliary roller in a belt conveyor type, and the dielectric is attached to the belt-like substrate. The dielectric that is rotationally driven while being in contact with each other, arranges an insulator between the two auxiliary rollers, and alternately embeds positive and negative electrodes along the longitudinal direction of the insulator, and is rotationally driven. It is comprised so that it may contact.

  The present invention also provides a semiconductor device comprising a strip-shaped substrate transport means for transporting a strip-shaped substrate in the longitudinal direction of the strip-shaped substrate and transferring it to the next deposition chamber in a gas gate connecting a plurality of deposition chambers. In the continuous manufacturing apparatus, an insulator is disposed along the longitudinal direction on the wall surface of the gas gate, a plurality of electrodes embedded in the insulator along the longitudinal direction are brought into contact with the dielectric, and the strip substrate is The dielectric is slidable.

In the present invention, the electrostatic force generated in the dielectric is used as means for bringing the roller disposed on the wall surface of the gas gate or inside the gas gate and the belt-like substrate into close contact with each other. The appropriate value of the electrostatic force is about several tens to several hundreds Pa.
That is, an electrode for applying an electrostatic force is disposed inside the gas gate in the vicinity of the belt-shaped substrate transported in the gas gate, and a dielectric is formed on a rotatable roller formed of a hollow cylinder between the electrode and the belt-shaped substrate. The electrode is connected to a rotating shaft that is electrically connected to the roller, a DC or AC voltage is applied to the electrode, and the belt-like substrate is supported by the cooperation of the electrode and a dielectric. is doing.

As the belt-like substrate, one having a conductive property or a conductor portion on the surface or inside of an insulating substrate is used. For example, it is possible to use a polyimide resin film provided with a silver layer.
A thin dielectric is provided between the electrode and the strip substrate to maintain insulation and improve electrostatic force. That is, since the electrostatic force is proportional to the square of the applied voltage and inversely proportional to the square of the dielectric thickness, the thinner dielectric can attract the belt-like substrate with a larger attractive force.
Further, the electrostatic force increases as the dielectric constant of the dielectric increases. Therefore, a resin material such as polyimide or PTFE, a ceramic material such as aluminum nitride or silicon carbide, an anodic oxide film of aluminum, or the like can be used as the dielectric.

As the voltage to be applied, either direct current or alternating current can be used. A direct current provides a large electrostatic force, and an alternating current has an advantage that it is easy to separate the substrate from the electrode because the electrostatic force changes periodically.
In order to omit the structure for grounding the substrate, it is preferable that when a DC voltage is applied, the positive electrode and the negative electrode are close to the substrate with substantially the same area with reference to the ground potential. When alternating current is used for the same reason, it is preferable that electrodes to which voltages having different phases are applied are close to the substrate in the same area.

Therefore, according to the present invention, the static electricity increases as the thickness of the dielectric material decreases, and the force for adsorbing the belt-like substrate to the dielectric material coated on the surface of the roller increases. Thereby, the said strip | belt-shaped board | substrate adheres without producing a clearance gap between this strip | belt-shaped board | substrate and the dielectric material coat | covered on the surface of the roller. Note that the lower limit of the thickness of the dielectric is determined from the strength of the dielectric.
And because it is due to static electricity generated inside the dielectric, even if the belt-like substrate is a non-magnetic material, for example, it is possible to use a silver resin layer provided on the surface of a polyimide resin film. A high quality semiconductor thin film element can be manufactured by realizing the gap between the gas gates and suppressing gas diffusion and mixing between the film forming chambers.

Further, if the roller is divided into two in the axial direction through an insulator and each of the rollers is connected to a rotation shaft, and the electrodes are connected to the rotation shafts, a positive electrode and a negative electrode are connected to one roller. Can be incorporated, and the structure can be simplified.
Further, by disposing the insulator over the entire inner wall surface of the gas gate, the insulation between the roller and the gas gate can be enhanced.

  On the other hand, the dielectric is inserted into the outer periphery of a rotatable roller made of a hollow cylinder, the roller is formed integrally with the rotating shaft, the electrode is connected to the roller integrated with the rotating shaft, and the roller Is supported by a gas gate with a bearing, and the power from the electrode is connected to a roller integral with the rotary shaft via a slip ring, and is transmitted to the dielectric via the roller. Since the roller rotates integrally with the roller, the structure is simple, the number of parts is small, and the cost can be reduced.

  In addition, an insulator formed along the circumferential direction is provided inside the roller, and grooves are formed on the outer periphery of the insulator at regular intervals to open on the inner peripheral surface of the dielectric. If the positive electrode and the negative electrode are alternately embedded along the circumferential direction so as to be in contact with the inner periphery of the dielectric, a positive charge and a negative charge are formed on the surface of the belt-shaped substrate in contact with one roller. And the device can be made compact.

  Further, if the dielectric that is in contact with the belt-shaped substrate transported in the gas gate can be independently rotated, and the positive electrode and the negative electrode fixed to the fixing member are brought into contact with the inner periphery of the dielectric, It is necessary to increase the strength of the dielectric by using ceramics or the like, and it is necessary to increase the applied voltage accordingly.

  In addition, a groove is provided in the gas gate, two auxiliary rollers are provided in parallel in the groove, a dielectric material is installed on the auxiliary roller in a belt conveyor manner, and the dielectric material rotates while contacting the belt-like substrate. Drive, dispose an insulator between the two auxiliary rollers, and alternately embed positive and negative electrodes along the longitudinal direction of the insulator so as to contact the rotationally driven dielectric If constituted, the electrodes need only be a positive electrode and a negative electrode, and the number of electrodes can be reduced.

  Then, an insulator is disposed along the longitudinal direction on the wall surface of the gas gate, a plurality of electrodes embedded in the insulator along the longitudinal direction are brought into contact with the dielectric, and the belt-like substrate is placed on the dielectric. If configured to be slidable, the contact area between the belt-like substrate and the dielectric can be increased. For this reason, it is preferable to use a material having high lubricity as a material for the dielectric and to make the electrostatic attractive force small. According to the present invention, when a three-phase AC voltage is applied, the electrostatic attraction force changes periodically, so that the tension necessary for transporting the belt-like substrate can be reduced. It is also possible to apply a two-phase alternating current with a phase shift of 180 ° to the positive and negative electrodes instead of the three-phase alternating voltage.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First embodiment]
FIG. 1 is a longitudinal sectional view of a gas gate portion of a semiconductor device continuous manufacturing apparatus according to a first embodiment of the present invention, and FIG. 2 is a sectional view taken along the axis of a roller (a sectional view taken along line AA in FIG. 1). It is.
As shown in FIGS. 1 and 2, a plurality of strip-like substrates 4 (four in this embodiment) are arranged in a row in a gas gate 10 connecting a plurality of film forming chambers 20, 20. The belt is conveyed in the longitudinal direction of the belt-like substrate 4 by the rotation.
As shown in FIG. 2, the roller 2 is formed in a hollow shape to constitute a positive electrode 11, and a shaft 7 made of a conductive material such as SUS304, steel, aluminum, or the like is penetratingly disposed at the center thereof. In the vicinity of both ends of the shaft 7, the both sides of the roller 2 are rotatably supported by bearings 9 made of a conductive material.

An insulator 8 is inserted into both ends of the shaft 7, and the shaft 7 and the gas gate 10 are insulated from each other by the insulator 8 and fixed to the wall surface of the gas gate 10.
The roller 2 is a hollow cylinder of aluminum alloy A5050, and the dielectric 1 made of a polyimide resin film having a thickness of about 75 μm and a dielectric constant of about 3.6 is formed on the surface of the positive electrode 11 constituting the roller 2. Is covered. Also when these rollers 2 constitute a negative electrode, they are constituted by the dielectric 1 similar to the above.
In addition, a polyethylene film, tantalum oxide, barium titanate, or the like is used as the dielectric 1.

The strip-like substrate 4 is, for example, a polyimide resin film having a width of about 300 mm and a thickness of about 50 μm, and a conductive film 5 made of silver having a thickness of 0.2 to 0.3 μm is formed on both sides. For example, about 250 sccm of H ₂ is supplied from the scavenging gas supply ports 6 provided at two central positions of the gas gate 10.
In addition, the film forming chambers 20 and 20 connected to both sides of the gas gate 10 are appropriately set with a pressure of 2 to 5 Torr and a temperature of about 140 to 180 ° C. The gas composition of the film forming chambers 20 and 20 is based on H ₂ and _Si H ₄ , and a small amount of PH ₄ or B ₂ H ₆ may be mixed in the film forming chamber 20 on one side.

  As shown in FIG. 2 (the strip-like substrate 4 is omitted in FIG. 2), a DC power source 3 is connected to the shaft tip of each shaft 7. As shown in FIG. 1, the DC power source 3 has at least one roller 2 serving as a negative electrode disposed next to the roller 2 serving as a positive electrode. With this configuration, positive and negative charges are induced in the belt-like substrate 4, and the potential of the belt-like substrate 4 is equal to the intermediate potential between the positive electrode and the negative electrode, that is, the ground electrode.

1 and 2, when the DC power source 3 is energized, the current passes through the shaft 7 and the bearing 9 and is transmitted to the dielectric 1 made of a polyimide resin film or the like. Here, movement of the electrode in the dielectric 1 occurs, the centers of the positive and negative charges are separated, static electricity is generated, and the electric moment is distributed. This static electricity is proportional to the square of the applied voltage and inversely proportional to the square of the thickness of the dielectric 1.
Accordingly, as the thickness of the dielectric 1 is reduced, static electricity increases, and the force for attracting the belt-like substrate 4 to the dielectric 1 covered on the surface of the roller 2 increases. Thereby, the strip | belt-shaped board | substrate 4 adheres, without producing a clearance gap between this strip | belt-shaped board | substrate 4 and the dielectric material 1 coat | covered on the surface of the roller 2. FIG.
However, the lower limit of the thickness of the dielectric 1 is determined from the strength aspect of the dielectric 1. As an example of the gas gate 10, the gap is 3 mm, and the width and length are 300 mm. Furthermore, because of the static electricity generated inside the dielectric 1, even if the belt-like substrate 4 is a nonmagnetic material, it can be used, for example, when a silver layer is provided on the surface of the polyimide resin film. .

[Second Embodiment]
FIG. 3 is a longitudinal sectional view of a gas gate portion of a continuous manufacturing apparatus for semiconductor elements according to a second embodiment of the present invention.
In this gas gate 10, the roller 2 is divided into a positive electrode 11 and a negative electrode 12 through an insulator 8, and each positive electrode 11 is connected to a shaft 7a through a bearing 9a, and the negative electrode 12 is connected to a bearing 9b. It is connected to the shaft 7b via Each shaft 7a and shaft 7b are connected to a DC power source 3a and a DC power source 3b, respectively. Other configurations are the same as those of the first embodiment, and the same members are denoted by the same reference numerals.
If comprised like 2nd Embodiment, the positive electrode 11 and the negative electrode 12 can be integrated in the one roller 2, and a structure can be simplified. Further, by disposing the insulator 8a over the entire inner wall surface of the gas gate 10, the insulation between the roller 2 and the gas gate 10 can be enhanced.

[Third Embodiment]
FIG. 4 is a longitudinal sectional view of a gas gate portion of a continuous manufacturing apparatus for semiconductor elements according to a third embodiment of the present invention.
In the third embodiment, the shaft 7 is formed integrally with the roller 2 (for example, the positive electrode 11 or the negative electrode 12), and both end portions are supported by bearings 9 and 9. These bearings 9 and 9 are supported by insulators 8 and 8 and insulated from the gas gate 10. In this case, a slip ring 10 is inserted into the tip of the shaft 7, and a direct current from the DC power source 3 is passed through the shaft 7 via the slip ring 10a, and the shaft 7 is connected to the roller 2 (for example, the positive electrode 11). ) And rotate together. Therefore, the bearings 9 and 9 may not be a conductive material. Other configurations are the same as those of the first embodiment, and the same members are denoted by the same reference numerals.
In the third embodiment, since the shaft 7 rotates integrally with the roller 2, the structure is further simplified and the number of parts is reduced.

[Fourth Embodiment]
5 to 7 are cross-sectional views in a direction perpendicular to the roller axis of the gas gate portion of the continuous manufacturing apparatus for semiconductor elements according to the fourth to sixth embodiments of the present invention. Shows the case. 5 to 7 show the case where there is one roller, but in actuality, a plurality of rollers are provided in the same manner as in FIGS.
The fourth embodiment shown in FIG. 5 is the same as the first embodiment of FIGS. 1 and 2, and the roller 2 corresponds to the positive electrode 11 and the negative electrode 12. In addition, the conductive film 5 made of silver having a thickness of 0.2 to 0.3 μm is formed on the front and back surfaces of the belt-like substrate 4 as in the first embodiment. Further, the gap S between the surface of the dielectric 1 and the gas gate 10 is formed as small as possible in order to reduce the passage of the scavenging gas.
Other configurations are the same as those of the first embodiment, and the same members are denoted by the same reference numerals.

[Fifth Embodiment]
In the fifth embodiment shown in FIG. 6, grooves 21 that open to the inner peripheral surface of the dielectric 1 are formed at regular intervals on the outer periphery of the insulator 8 formed along the circumferential direction inside the roller 2. The positive electrode 11 and the negative electrode 12 are alternately embedded in the groove 21 along the circumferential direction. Other configurations are the same as those of the first embodiment, and the same members are denoted by the same reference numerals.
If configured as in the fifth embodiment, positive charges and negative charges can be induced on the surface of the belt-like substrate 4 in contact with one roller 2, and the apparatus can be made compact.

[Sixth Embodiment]
In the sixth embodiment shown in FIG. 7, the positive electrode 11 and the negative electrode 12 are separated from the roller 2 and fixed to the fixing member 40 so that the dielectric 1 contacts the belt-like substrate 4 while rotating alone. It is configured. Other configurations are the same as those of the first embodiment, and the same members are denoted by the same reference numerals.
In this case, since the dielectric 1 is rotated independently, it is necessary to increase the strength by using ceramics having a thickness of about 1 mm, and it is necessary to increase the applied voltage accordingly. However, according to the sixth embodiment, the number of electrodes can be small.

[Seventh Embodiment]
FIG. 8 is a cross-sectional view in a direction perpendicular to the roller axis of the gas gate portion of the continuous manufacturing apparatus for semiconductor elements according to the seventh embodiment of the present invention, and shows a case where there are two auxiliary rollers.
In the seventh embodiment, two auxiliary rollers 16 are arranged in parallel in the groove 10a of the gas gate 10, and the dielectric 1 is installed between the auxiliary rollers 16 in a belt conveyor manner so that the auxiliary roller 16 rotates. It is configured to drive. On the other hand, between the two auxiliary rollers 16, the positive electrode 11 and the negative electrode 12 are alternately buried along the longitudinal direction in the groove of the insulator 8, and with respect to the positive electrode 11 and the negative electrode 12. The dielectric 1 is rotated. As in the first embodiment, a conductive film 5 made of silver having a thickness of 0.2 to 0.3 μm is formed on the front and back surfaces of the belt-like substrate 4.
According to the seventh embodiment, only the positive electrode 11 and the negative electrode 12 may be used, and the number of electrodes may be small.

[Eighth Embodiment]
FIG. 9 is a cross-sectional view of a gas gate portion of a continuous semiconductor device manufacturing apparatus according to the eighth embodiment of the present invention.
In FIG. 9, a U-phase electrode 13, a V-phase electrode 14, and a W-phase electrode 15 embedded along the longitudinal direction of the insulator 8 are arranged at regular intervals on the wall surface of the gas gate 10. Is configured such that a three-phase AC voltage having a frequency of 1HZ to 100HZn is applied.
Between the U-phase electrode 13, the V-phase electrode 14 and the W-phase electrode 15 and the strip substrate 4, alumina ceramics having a thickness of 1 mm are disposed as the dielectric 1. The belt-like substrate 4 is configured to be slidable as indicated by the arrow Z direction on the dielectric 1. With this configuration, when an AC voltage having an effective value of 300 V is applied, the electrostatic attractive force is about 30 Pa.

In the eighth embodiment, since the contact area between the belt-like substrate 4 and the dielectric 1 is large, it is preferable to use a material having high lubricity as the material for the dielectric 1 and to reduce the electrostatic attractive force.
According to the eighth embodiment, when a three-phase AC voltage is applied, the electrostatic attraction force periodically changes, so that the tension necessary for transporting the belt-like substrate 4 can be reduced. In addition, a two-phase alternating current whose phase is shifted by 180 ° can be applied to the positive and negative electrodes instead of the three-phase alternating voltage.

  While the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various changes and modifications can be made based on the technical idea of the present invention.

FIG. 2 is a longitudinal sectional view showing a gas gate portion of the semiconductor device continuous manufacturing apparatus according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view (a cross-sectional view taken along line AA in FIG. 1) along the axis of the roller. It is a longitudinal cross-sectional view which shows the gas gate part of the continuous manufacturing apparatus of the semiconductor element which concerns on 2nd Embodiment of this invention. It is a longitudinal cross-sectional view which shows the gas gate part of the continuous manufacturing apparatus of the semiconductor element which concerns on 3rd Embodiment of this invention. It is sectional drawing of the direction orthogonal to the roller axial center of the gas gate part of the continuous manufacturing apparatus of the semiconductor element which concerns on 4th Embodiment of this invention, Comprising: The case where there is one roller is shown. It is sectional drawing of the direction orthogonal to the roller axial center of the gas gate part of the continuous manufacturing apparatus of the semiconductor element which concerns on 5th Embodiment of this invention, Comprising: The case where there is one roller is shown. It is sectional drawing of the direction orthogonal to the roller axial center of the gas gate part of the continuous manufacturing apparatus of the semiconductor element which concerns on 6th Embodiment of this invention, Comprising: The case where there is one roller is shown. It is sectional drawing of the direction orthogonal to the roller axial center of the gas gate part of the continuous manufacturing apparatus of the semiconductor element which concerns on 7th Embodiment of this invention, Comprising: The case where two auxiliary rollers are shown is shown. It is sectional drawing which shows the gas gate part of the continuous manufacturing apparatus of the semiconductor element which concerns on 8th Embodiment of this invention. It is a longitudinal cross-sectional view which shows a prior art example and corresponds to FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Dielectric body 2 Roller 3 DC power supply 4 Strip | belt-shaped board | substrate 5 Conductive film 6 Gas supply port for scavenging 7 Axis 8 Insulator 9 Bearing 10 Gas gate 10a Slip ring 11 Positive electrode 12 Negative electrode 13 U-phase electrode 14 V-phase electrode 15 W-phase Electrode 20 deposition chamber

Claims (8)

  A belt-shaped substrate transporting means for transporting a belt-shaped substrate by rotation of a plurality of rollers arranged in the longitudinal direction of the belt-shaped substrate in a gas gate connecting a plurality of film-forming chambers to the next film-forming chamber. In a continuous manufacturing apparatus for a roll-to-roll semiconductor element, an electrode is disposed in the gas gate in the vicinity of the strip substrate transported in the gas gate, and the electrode and the strip substrate A continuous semiconductor device characterized in that a dielectric is installed between the electrodes, and a DC or AC voltage is applied to the electrodes to support the strip substrate by the cooperation of the electrodes and the dielectric. Manufacturing equipment.   The dielectric is inserted into the outer periphery of a rotatable roller made of a hollow cylinder, the electrode is connected to a rotating shaft electrically connected to the roller, and the rotating shaft is supported by the gas gate by a bearing, The apparatus for continuously manufacturing a semiconductor element according to claim 1, wherein electric power from the electrode is transmitted to the dielectric via the rotating shaft, the bearing, and the roller.   3. The continuous semiconductor element according to claim 2, wherein the roller is divided into two in the axial direction through an insulator, each of which is connected to a rotation shaft, and each of the electrodes is connected to the rotation shaft. Manufacturing equipment.   The dielectric is inserted into the outer periphery of a rotatable roller made of a hollow cylinder, the roller is formed integrally with the rotating shaft, the electrode is connected to the roller integrated with the rotating shaft, and the roller is a bearing. The gas gate is configured to support the electric power from the electrode through a slip ring and to a roller integral with the rotating shaft, and to be transmitted to the dielectric through the roller. The continuous manufacturing apparatus for semiconductor elements according to claim 2.   An insulator formed along the circumferential direction is provided inside the roller, and grooves are formed on the outer periphery of the insulator at regular intervals to open on the inner peripheral surface of the dielectric. The semiconductor device continuous manufacturing apparatus according to claim 2, wherein a positive electrode and a negative electrode are alternately embedded along the inner surface of the dielectric and contact with the inner periphery of the dielectric.   In a continuous production device for a semiconductor device, comprising a belt-shaped substrate transport means for transporting a belt-shaped substrate in the longitudinal direction of the belt-shaped substrate and transferring it to the next film-forming chamber in a gas gate connecting a plurality of film deposition chambers The dielectric that is in contact with the belt-shaped substrate conveyed in the gas gate can be independently rotated, and the positive electrode and the negative electrode fixed to the fixing member are configured to contact the inner periphery of the dielectric. Continuous manufacturing equipment for semiconductor devices.   In a continuous production device for a semiconductor device, comprising a belt-shaped substrate transport means for transporting a belt-shaped substrate in the longitudinal direction of the belt-shaped substrate and transferring it to the next film-forming chamber in a gas gate connecting a plurality of film deposition chambers A groove is provided in the gas gate, two auxiliary rollers are provided in parallel in the groove, and a dielectric is installed on the auxiliary roller in a belt conveyor manner, and the dielectric is rotated while being in contact with the belt-like substrate. An insulator is disposed between the two auxiliary rollers, and positive and negative electrodes are alternately embedded along the longitudinal direction of the insulator so as to come into contact with the rotationally driven dielectric. A continuous manufacturing apparatus for semiconductor elements.   In a continuous production device for a semiconductor device, comprising a belt-shaped substrate transport means for transporting a belt-shaped substrate in the longitudinal direction of the belt-shaped substrate and transferring it to the next film-forming chamber in a gas gate connecting a plurality of film deposition chambers An insulator is disposed on the wall surface of the gas gate along the longitudinal direction, a plurality of electrodes embedded in the insulator along the longitudinal direction are brought into contact with the dielectric, and the strip substrate is slid over the dielectric A continuous manufacturing apparatus of a semiconductor device, characterized in that it is configured.

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