JP2001326183A - Method and apparatus for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus for processing a substrate, in which defects and contamination are prevented, while enhancing the yield and characteristics by removing dust adhering to the surface of a substrate and the cost can be reduced by increasing the number of times of utilizing a ply-sheet. SOLUTION: The method for processing a substrate comprises a step for inserting a ply-sheet 101, having at least one charged surface between substrate 100 or removing the ply-sheet 101 therefrom, where at least one surface of the ply-sheet 101 has a surface roughness Ra of 1 μm-1 mm and surface resistivity of 1×109 Ω/cm2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and a substrate processing apparatus, and more particularly to a substrate processing method and a substrate processing apparatus for processing a substrate on which a functional deposition film is stacked in a photovoltaic element or the like. .

[0002]

2. Description of the Related Art Conventionally, as a method of processing a substrate, for example, as a method of forming a functional deposition film on a substrate, a deposition film such as sputtering, CVD, or vacuum deposition is formed on a flat or long strip substrate. Processing methods such as doping and etching using plasma are widely known. For example, when a photovoltaic element is manufactured using a Si-based thin film or the like, a chemical vapor deposition method (CVD) under reduced pressure, a sputtering method, and the like are generally widely used.

In the single-wafer processing method, when a flat substrate is handled, it is often the case that after performing these processes, the substrates are stacked one upon another in order to improve the transportation efficiency.
Further, by inserting a slip sheet between the substrates when the substrates are stacked, it is possible to prevent the occurrence of scratches due to contact and the destruction of the film.

As a method for improving mass productivity using a long strip-shaped substrate, for example, Japanese Patent Publication No. 4-32533 discloses a roll-to-roll method.
1) A continuous plasma CVD apparatus employing the method is disclosed. According to the gazette, a plurality of glow discharge regions are provided in a deposition film forming apparatus, and each glow discharge region is sequentially penetrated in a longitudinal direction of a sufficiently long flexible strip substrate having a desired width. It is said that a conductive semiconductor layer can be deposited by the method described above to continuously produce an element having a semiconductor junction. Further, the publication discloses the use of interleaf paper for protecting the surface of the belt-like substrate. As the material of the slip sheet, a material having a certain thickness and a hardness that is softer than the band-shaped substrate, for example, when the band-shaped substrate is made of metal,
Resins, chemical fibers, and the like. When creating the element,
By inserting the slip sheet between the substrates while continuously transporting the belt-shaped substrate, damage to the deposited film due to contact between the deposited film surface of the rolled substrate and the back surface thereof is prevented.

Japanese Patent Application Laid-Open No. Hei 6-260421 discloses that in a roll-to-roll type continuous film forming apparatus, a dust removing means for removing a charge is installed on a moving path of a belt-like substrate or a slip sheet to remove a charge. A method of carrying while carrying is disclosed. In this publication, by removing electricity from a strip-shaped substrate and interleaf paper, dust existing in the atmosphere of the processing chamber is prevented from adsorbing to the substrate and interleaf paper, thereby preventing the occurrence of element defects.

[0006]

However, in the conventional method for processing a substrate, if dust generated during the process adheres to the substrate surface and it is difficult to remove the dust, the dust remains attached to the substrate. As the process proceeds, there are problems that the dust adhered portion becomes a defect or a scratch to lower the yield, and that the dust acts as an impurity in the substrate processing process to lower the characteristics.

As sources of such dust, for example, dust in a processing chamber atmosphere, peeling of a film deposited inside the processing chamber, particles generated as a by-product of the processing step,
Examples include cutting powder generated by contact with a processing chamber or the like when the substrate is transferred. Although the size and shape of the dust greatly depend on the generation process, the dust in the present invention generally has a major diameter of 0.1 μm to 1 mm.

Further, when a member having a substantially flat surface and no irregularities is used as the slip sheet, dust sandwiched between the board and the slip sheet is pressed against the surface of the board. On the other hand, when the length of the belt-like substrate is increased, the substrate is pressed more strongly by its own amount, and the scratches and defects tend to be promoted. Furthermore, if the dust is transferred to and adheres to the slip sheet side, the dust will stick to the substrate side if the slip sheet is used again.Therefore, the slip sheet must be discarded after one use, resulting in lower costs. It was hanging.

SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to remove dust adhering to the surface of a substrate by using a predetermined interleaving paper when processing the substrate by using a single-wafer method or a roll-to-roll method. It can prevent dust, scratches, defects and contamination on the substrate surface or deposited film due to dust, improve the yield and characteristics by processing the substrate with high quality, and use the number of usable slip sheets. It is an object of the present invention to provide a substrate processing method and a substrate processing apparatus that can reduce the cost required for interleaving by increasing the number of sheets.

[0010]

In order to achieve the above object,
The substrate processing method of the present invention includes a step of inserting an interleaf sheet having at least one surface charged between the substrates, wherein at least one surface of the interleaf sheet has a surface roughness Ra of 1 μm to 1 mm and a surface resistivity of at least one surface. It is characterized by being at least 1 × 10 ⁹ Ω / cm ² . Further, the substrate processing method of the present invention includes a step of removing, from between the substrates, interleaving paper on which at least one surface is charged, at least one surface of the interleaving paper has a surface roughness Ra of 1 μm to 1 mm, and a surface resistivity of Is 1 × 10 ⁹ Ω / cm ² or more.

In the substrate processing apparatus of the present invention, there is provided a substrate processing apparatus having means for inserting a slip sheet between the substrates, wherein the means for inserting the slip sheet between the substrates includes at least one surface having a surface roughness Ra. Is 1 μm to 1 mm and the surface resistivity is 1 ×
It is a means for inserting an interleaving paper having a resistivity of 10 ⁹ Ω / cm ² or more and having at least one surface charged between the substrates. Further, the substrate processing apparatus of the present invention is a substrate processing apparatus having means for removing interleaving paper between substrates, wherein the means for removing interleaving paper between the substrates has a surface roughness Ra of at least one surface of 1 μm to 1 mm, It has a surface resistivity of 1 × 10 ⁹ Ω / cm ² or more, and is a means for removing interleaving paper having at least one surface charged between the substrates.

The substrate processing method and apparatus according to the present invention include:
As further features, "processing a substrate by a single-wafer method in which substrates are overlapped with each other", "processing a substrate by a roll-to-roll method in which a roll-shaped substrate is stretched between rolls and transported", Subjecting the substrate to any one of cleaning, deposition film formation, etching, modification, patterning, cutting, heating, and cooling ".

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below, but the present invention is not limited to these embodiments.

FIG. 1 shows an example of a single wafer processing method according to the present invention. In FIG. 1, 100 is a substrate, 101
Is a slip sheet, 102 is a conveying means, 103 is a charging means, 104
Is a stacking means. The interleaf paper 101 is transported so that the position is synchronized with the substrate 100 transported by the transport means 102, and the interleaf paper 101 is coated on the substrate 100. At this time, the interleaf paper 101 is charged by the charging means 103 immediately before the interleaf paper 101 is brought into contact with the substrate 100, so that dust adhering or existing on the surface of the substrate 100 is captured by the interleaf paper 101 by electrostatic adsorption. Is done.

Here, using the apparatus shown in FIG.
FIG. 2 shows an example of the relationship between the surface resistivity of No. 01 and the cleaning effect of the substrate, that is, the dust capture rate. The experimental method is as follows. The substrate 100 has a size of 100 mm square and a thickness of 2 m.
m stainless steel plate (SUS304), high quality paper made of wood pulp having a thickness of 0.1 mm as interleaf paper 101, and fine powder of stainless steel having a diameter of 5 μm (SUS304) were used as dust. As for the resistivity of the slip sheet 101, the surface resistivity was changed by changing the water content of the high-quality paper.

The humidity of the experimental atmosphere is adjusted to 40%,
As means 103, a switch connected to a high-voltage power supply (not shown)
Apply a voltage of -5 kV to the needle made of stainless steel and apply corona discharge.
The entire surface of the interleaf paper 101 facing the substrate 100 is uniform
Was charged. Approximately 100 pieces of the fine powder on the substrate 100
/ Cm^TwoInterspersed at the density of
101, and after removing the slip sheet 101 again,
The density of the fine powder left on the plate 100 and the initial density
Is the dust capture rate, and the ratio of the
The relationship is plotted in FIG. As shown in FIG.
Resistance rate 1 × 10 ⁹Ω / cm^TwoAs a result, the capture rate began to rise,
1 × 10¹²Ω / cm^TwoWith the above, almost all dust can be captured
You can see that you can. From this, the surface resistance of the slip sheet 101 is
Resistance rate 1 × 10⁹Ω / cm^TwoAbove, preferably 1 × 10^Ten
Ω / cm^TwoAbove, more preferably 1 × 10¹²Ω / cm^TwoLess than
If it is above, make sure that the charging voltage of the slip sheet 101 is maintained.
Can be effectively captured.

Further, according to the present invention, the surface roughness Ra of the interleaf paper 101 is 1 μm to 1 mm, and the surface has fine irregularities. Therefore, the adsorbed dust is inserted into the slip paper 10
The dust captured by the first concave portion is captured by the substrate 10.
The contact with the zero surface is eliminated, and damage to the substrate 100 can be avoided. The irregular shape of the surface of the slip sheet 101 may be such that the size of the space for the concave portion is equal to or larger than the size of the dust. Can be avoided.

The surface resistivity and the surface roughness Ra defined as described above are effective if they are at least one of the front surface and the back surface of the slip sheet 101. For example, when only one surface of the substrate 100 is to be processed, a material in which one surface of the slip sheet is coated with metal can be used, and the non-metal coated surface has the resistivity and surface roughness specified in the present invention. When the substrate 100 is stacked so as to face the processing target surface of the substrate 100, an effect of cleaning the substrate 100 can be exerted.

The present invention is also effective in a substrate processing method employing a roll-to-roll method for processing a long strip-shaped substrate. As an example of forming a functional deposition film on a substrate, a roll-to-roll type apparatus is shown in FIG. According to this apparatus, a photovoltaic element using nip type amorphous silicon can be continuously formed on the belt-shaped substrate 300.

FIG. 4 shows an element configuration of a nip type photovoltaic element.
Shown in In FIG. 4, a photovoltaic element includes a conductive substrate 400, a back reflection layer 401, an n-type layer 402, an i-type layer 403, a p-type layer 404, a transparent electrode 405, and a current collecting electrode 4
06 are sequentially deposited. In the device of FIG.
Among them, the n-type layer 402, the i-type layer 403, and the p-type layer 404
However, by changing the substrate processing method of a portion corresponding to the film forming chambers 308 to 310, processing such as substrate cleaning, sputter deposition, and etching can be performed.

In FIG. 3, the strip-shaped substrate 300 is sent out from the sending-out bobbin 301 in the sending-out chamber 305, passes through three vacuum vessels 307 connected by the gas gate chamber 315, and is wound up in the winding-up chamber 306. It is wound around the bobbin 302. The slip sheet sent out from the sending-out bobbin 301 is taken up by a slip sheet take-up bobbin 303, and the slip sheet taken up by the take-up bobbin 302 is supplied from the slip sheet sending bobbin 304.

The delivery chamber 305, the take-up chamber 306, the vacuum chamber 307, and the film formation chambers 308 to 310
The gas is exhausted by an exhaust adjustment valve (not shown) and exhaust means (not shown) through 4, and can be adjusted to a desired pressure in each of the film forming chambers 308 to 310 by measuring with a pressure gauge (not shown). Further, the band-shaped substrate 300 can be heated to a desired temperature by the substrate heater 312. Source gas from a gas mixer (not shown) is supplied from the source gas introduction pipe 313 to each of the film forming chambers 308 to 310.
Can be introduced to

Further, power is applied to the high-frequency electrode 311 from a high-frequency oscillator (not shown) so that each of the film forming chambers 308 to 310 is formed.
Generates a plasma discharge on the strip-shaped substrate 300,
A p-type amorphous silicon film can be formed continuously.

Introducing gas for separation into each gas gate chamber 315
Inert gas or H from tube 316 _TwoScavenging gas such as gas
By introducing the source, each of the film forming chambers 308 to 310 and the true
Prevents gas inside empty container 307 from being mixed with each other
And a high-quality deposited film can be obtained. Also, vacuum
The band-shaped substrate 300 inside the container 307 or the gas gate chamber 315
The magnet roller 317 is placed in an appropriate place in the passage
This allows the band-shaped substrate 300 having ferromagnetism to be adsorbed.
The belt-shaped substrate 300 can be transported along a desired route.
it can.

FIG. 5 shows a detail of a portion of the apparatus of FIG. In FIG. 5, reference numeral 501 denotes a slip sheet; 502, an idle roller;
Is a charging means. Band-shaped substrate 300 and interleaf bobbin 304
Is wound up on the substrate bobbin 302 together with the interleaving paper 501, and the band-shaped substrate 300 and the interleaving paper 501 come into contact with the substrate bobbin 302 alternately. Before the interleaf 501 is wound on the substrate bobbin 302, the interleaf 501 is continuously charged by the charging means 503, and the dust existing on the surface of the belt-shaped substrate 300 is simultaneously wound up with the interleaf 501.
And the belt-shaped substrate 300 is cleaned. Further, even if the charging unit 503 is not used, the same effect can be obtained by charging the interleaf 501 by the self-friction of the interleaf 501 unwound from the interleaf bobbin 304.

FIG. 6 is a detail of a portion of the apparatus of FIG. In FIG. 6, the substrate 300 and the interleaf 601 are sent out from the substrate bobbin 301, and the interleaf 601 is wound around the interleaf bobbin 303. The dust existing on the surface of the substrate 300 is electrostatically attracted to the slip sheet 601 and the belt-shaped substrate 300 is cleaned. Further, even if the charging unit 603 is not used, the substrate 300 sent out from the substrate bobbin 301 and the slip sheet 601 can be used.
The same effect can be obtained by charging the interleaving paper 601 by friction with the above.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to the accompanying drawings, but the present invention is not limited to these embodiments.

Embodiment 1 In this embodiment, a substrate is processed using the apparatus shown in FIG. 1, and a photovoltaic element using nip type amorphous silicon on a substrate 100 (see FIG. 4) by the following procedure. ) Was created. In this embodiment, from the back reflection layer 401 to the transparent electrode layer 405 are formed on the substrate 400 using a CVD device and a sputtering device (not shown), the substrate 400 is taken out into the atmosphere, and then the substrate processing device shown in FIG. The interleaving paper 101 is covered with the interleaving paper, 50 sheets of the substrate 100 covered with the interleaving paper are stacked by the laminating means 104 and transported to a vapor deposition device (not shown).
1 was removed by peeling, and a current collecting electrode 406 was formed by the vapor deposition apparatus. Table 1 shows the conditions and film thickness of each deposited film.

Mirror-polished size 1 as substrate 100
00mm square, 2mm thick stainless steel plate (SUS30
4), the surface resistivity is 2 × 10 ¹³ Ω as the slip sheet 101
/ Cm ² (water content 6.0%), surface roughness Ra = 20 μm
A high quality paper made of wood pulp having a size of 100 mm square and a thickness of 0.1 mm was used. The interleaf paper coating and the transport of the substrate are performed in a clean room with a humidity of 40% and class 1000, a DC voltage of -5 kV is applied to a stainless steel electrode needle as the charging means 103, and the transport speed of the transport means 102 during the interleaf paper coating is applied. Was set to 20 mm / sec.

The evaluation of the characteristics of the 50 photovoltaic elements produced by the above-described method was conducted with an AM value of 1.5 and an energy density of 1
The photoelectric conversion efficiency η when simulated sunlight of 00 mW / cm ² was irradiated was measured. Further, the so-called shunt resistance (resistance due to a short circuit inside the element) was measured, and the non-defective product having a shunt resistance of 1 × 10 ⁴ Ω / cm ² or more was measured. Table 2 shows the evaluation results. The photoelectric conversion efficiency η shown here is an average value of photoelectric conversion efficiencies of non-defective devices.

[Comparative Example 1] In this comparative example, the slip sheet 101 has a surface resistivity of 1 × 10 ¹⁴ Ω / cm ² and a surface roughness Ra =
0.05μm, size 100mm square, thickness 0.1mm
A photovoltaic element was prepared and evaluated in the same procedure as in Example 1 except that the polyethylene sheet was used. Table 2 shows the evaluation results.

[Comparative Example 2] In this comparative example, the interleaf paper 101 had a surface resistivity of 1 × 10 ³ Ω / cm ² and a surface roughness Ra =
A photovoltaic element was prepared and evaluated in the same procedure as in Example 1, except that a conductive polymer resin sheet having a size of 2.5 μm, a size of 100 mm square, and a thickness of 0.1 mm was used. Table 2 shows the evaluation results.

As a result, it was found that, in comparison with Comparative Example 1 or Comparative Example 2, there were many elements having a higher shunt resistance in Example 1, and the yield rate was improved. Observation of the surface of the element which was determined to be defective in Comparative Example 1 and Comparative Example 2 showed that
InSn, which is a transparent electrode layer, is applied to the portion where the device was destroyed.
There are fine fragments of O ₂ (particle size: 1 μm to 1 mm), and it is considered that the fragments applied destructive pressure to the element by using flat interleaf paper. In Example 1, such a phenomenon did not occur.

[0034]

[Table 1]

[0035]

[Table 2]

[Embodiment 2] In this embodiment, a substrate is processed using a roll-to-roll type apparatus shown in FIG. 3, and light using nip type amorphous silicon having the same element configuration as that of Embodiment 1 is used. Electromotive force elements were continuously produced. Further, the charging means shown in FIG. The charging means 503 has a -5
A DC voltage of kV was applied, and the transport speed of the belt-shaped substrate 300 was set to 10 mm / sec. The width of the band-shaped substrate 300 is 3
00mm, length 100m, thickness 0.2mm, SUS43
And a band-shaped substrate 300 on a BA surface-treated substrate by a roll-to-roll type sputtering film forming apparatus (not shown) in advance.
Use a sheet with a back reflection layer deposited on top
The surface resistivity is 1 × 10 ¹⁴ Ω / cm ² and the surface roughness R is 1.
The aramid paper having a = 20 μm and a thickness of 0.1 mm was used, and the interleaf used in the delivery chamber 305 and the winding chamber 306 was made of the same material.

Table 3 shows the conditions for forming a deposited film in each film forming chamber. As a film forming process, film deposition was continuously performed for about 5 hours, and an effective element could be formed on 70 m of a 100-m long strip-shaped substrate.

The strip-shaped substrate on which the amorphous silicon film obtained by the above procedure is deposited and the winding bobbin 302 on which the slip sheet is wound are taken out, and a transparent conductive film is formed by a sputtering type film deposition apparatus (not shown). 100 m in the transport direction while sending the belt-shaped substrate 300 by a cutting machine (not shown).
Each sample was cut into a sample every m, and a current collector electrode was formed by screen-printing an Ag paste to form a photovoltaic element shown in the schematic cross-sectional view of FIG. A sample was extracted every 1 m from the effective portion 70 m of the device on the strip-shaped substrate, and the characteristic evaluation of the photovoltaic device thus prepared was performed using an AM value of 1.
5. Evaluation was performed by measuring the photoelectric conversion efficiency η when simulating sunlight with an energy density of 100 mW / cm ² . A non-defective product having a shunt resistance of 1 × 10 ⁴ Ω / cm ² or more was measured for a non-defective product. Table 4 shows the evaluation results. The photoelectric conversion efficiency η shown here is the average value of the photoelectric conversion efficiencies of non-defective samples.

[Embodiment 3] In this embodiment, the charging means 50
Except that No. 3 was not installed, a photovoltaic element was prepared and evaluated in the same procedure as in Example 2. In this embodiment, the charging means 503 was not provided, but it was confirmed that the slip sheet 501 was charged by self-friction before being wound on the substrate bobbin 302. Table 4 shows the evaluation results.

[Comparative Example 3] In this comparative example, as the slip sheet 501, the surface resistivity was 1 × 10 ¹⁰ Ω / cm ² , and the surface roughness Ra =
A photovoltaic element was prepared and evaluated in the same procedure as in Example 2, except that a polyethylene sheet having a thickness of 0.05 μm and a thickness of 0.1 mm was used. Table 4 shows the evaluation results.

As a result, it was found that in Examples 2 and 3, as compared with Comparative Example 3, there were many elements having a higher shunt resistance, and the yield rate was improved. Observation of the surface of the device which was determined to be defective in Comparative Example 3 revealed that fine portions (particle size: 0.1 μm to 100 μm) of amorphous silicon as a semiconductor layer were found in the portion where the device was broken, It is considered that the use of paper caused the debris to exert destructive pressure on the element. Further, in Example 2, it is considered that since the charging voltage of the slip sheet 501 was higher than in Example 3, the cleaning effect was further improved and the non-defective product rate was improved.

[Embodiment 4] In this embodiment, the production and evaluation of the photovoltaic element are performed in the same procedure as in Embodiment 2 except that the charging means 603 shown in FIG. Was. Table 4 shows the evaluation results.

In the fourth embodiment, the photoelectric conversion efficiency η is improved as compared with the second embodiment. However, dust can be removed by cleaning when the belt-shaped substrate 300 is sent out, and impurities are mixed into the film forming chambers 308 to 310. It is considered that the number has decreased.

[0044]

[Table 3]

[0045]

[Table 4]

[Embodiment 5] In this embodiment, the trial of the production and evaluation of the photovoltaic element performed in Embodiment 2 was repeated 10 times while reusing the same slip sheet 501. FIG. 7 shows the change in the non-defective rate in each trial.

Comparative Example 4 In this comparative example, the slip sheet 501 has a surface resistivity of 1 × 10 ¹⁴ Ω / cm ² and a surface roughness Ra =
Aramid paper having a thickness of 0.05 μm and a thickness of 0.1 mm was used.
Except for this, a photovoltaic element was prepared and evaluated in the same procedure as in Example 5. FIG. 7 shows the change in the non-defective rate in each trial.

As a result, in the fifth embodiment, as compared with the comparative example 4, even if the number of trials increases, the decrease in the non-defective rate is small. As described above, by making the surface roughness of the slip sheet larger than the average particle diameter of the dust, it is possible to prevent the destruction of the element due to the dust and to increase the number of times the slip sheet is repeatedly used.

[0049]

As described above, according to the present invention,
In a substrate processing method and a substrate processing apparatus employing a single-wafer method or a roll-to-roll method, at least one surface has a surface roughness Ra of 1 μm to 1 mm and a surface resistivity of 1 × 10 ⁹ Ω / cm ² or more. By using a slip sheet with at least one surface charged to remove dust adhering to the surface of the substrate and obtaining a clean surface, dust, scratches, defects, and contamination on the substrate surface or the deposited film are reduced. Thus, the yield and characteristics can be improved by performing high-quality processing of the substrate. In addition, the number of usable sheets can be increased, and the cost required for the sheets can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic view showing an example of a single wafer type apparatus in a substrate processing method of the present invention.

FIG. 2 is a diagram illustrating the relationship between the surface resistivity of the slip sheet and the dust capture rate.

FIG. 3 shows a roll-to-roll process in the substrate processing method of the present invention.
It is the schematic which shows the example of an apparatus of a roll system.

FIG. 4 is a schematic diagram showing a cross-sectional structure of a photovoltaic element.

FIG. 5 shows a roll-to-roll process in the substrate processing method of the present invention.
It is the schematic which shows a part of apparatus example of a roll system.

FIG. 6 shows a roll-to-roll process in the substrate processing method of the present invention.
It is the schematic which shows a part of apparatus example of a roll system.

FIG. 7 is a diagram illustrating the relationship between the number of trials of substrate processing and the yield rate.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 100 Substrate 101 Interleaf 102 Conveying means 103 Charging means 104 Stacking means 300 Strip substrate 301 Sending bobbin 302 Winding bobbin 303 Inserting paper winding bobbin 304 Inserting paper sending bobbin 305 Sending chamber 306 Winding chamber 307 Vacuum container 308,309 , 310 Deposition chamber 311 High-frequency electrode 312 Substrate heater 313 Source gas introduction pipe 314 Exhaust pipe 315 Gas gate chamber 316 Separation gas introduction pipe 317 Magnet roller 400 Strip substrate 401 Back reflection layer 402 n-type layer 403 i-type layer 404 p-type Layer 405 Transparent electrode 406 Current collecting electrode 500 Band-shaped substrate 501, 601 Interleaving paper 502, 602 Idle roller 503, 603 Charging means

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuzo Koda 3- 30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Naoshi Yoshiri 3- 30-2 Shimomaruko 3-chome, Ota-ku, Tokyo Within Non Corporation (72) Inventor Hideo Tamura 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Corporation (72) Inventor Takahiro Yajima 3-30-2, Shimomaruko, Ota-ku, Tokyo Inside Canon Corporation (72) Inventor Masahiro Kanai 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Hiroshi Shimoda 3-30-2 Shimomaruko 3-chome, Ota-ku, Tokyo Canon Inc. (72) Invention Person Yasuyoshi Takai 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Hidetoshi Tsuzuki 3-30-2 Shimomaruko, Ota-ku, Tokyo F term in Canon Inc. (reference) 4K029 BA35 KA01 KA03 4K030 AA05 BA30 BA31 GA11 GA14 5F045 AB04 AC01 AC19 AF07 BB15 CA16 DP22 5F051 AA05 BA11 BA14 CA22 DA04 GA05 GA11 GA20

Claims (10)

[Claims] An interleaving paper having at least one surface charged is inserted between substrates, wherein at least one surface of the interleaving paper has a surface roughness Ra of 1 μm to 1 mm and a surface resistivity of 1 × 10 A substrate processing method characterized by being ⁹ Ω / cm ² or more. 2. The method according to claim 1, further comprising the step of removing interleaving paper having at least one surface charged between the substrates, wherein at least one surface of the interleaving paper has a surface roughness Ra of 1 μm to 1 mm and a surface resistivity of 1 × 10 ^9. A substrate treatment method characterized by being Ω / cm ² or more. 3. The substrate processing method according to claim 1, wherein the substrate is processed by a single-wafer method in which the substrates are overlapped with each other. 4. The substrate processing method according to claim 1, wherein the substrate is processed by a roll-to-roll method in which a roll-shaped substrate is stretched between rolls and transported. 5. A method for cleaning, forming a deposited film, etching, modifying,
5. The substrate processing method according to claim 1, wherein any one of patterning, cutting, heating, and cooling is performed on the substrate. 6. A substrate processing apparatus having means for inserting a slip sheet between substrates, wherein the means for inserting the slip sheet between the substrates is such that at least one surface has a surface roughness Ra of 1 μm to 1 mm and a surface resistivity of Is 1
A substrate processing apparatus characterized in that it is a means for inserting an interleaving paper having a density of 10 ⁹ Ω / cm ² or more and having at least one surface charged between the substrates. 7. A substrate processing apparatus having means for removing an interleaf from between substrates, wherein the means for removing the interleaf from between the substrates has a surface roughness Ra of at least one surface of 1 μm to 1 mm and a surface resistivity of 1 μm. A substrate processing apparatus characterized in that it is a means for removing interleaving paper having at least 10 ⁹ Ω / cm ² or more and having at least one surface charged, between the substrates. 8. The substrate processing apparatus according to claim 6, wherein a single wafer type in which substrates are overlapped is adopted. 9. The substrate processing apparatus according to claim 6, wherein a roll-to-roll method is adopted in which a roll-shaped substrate is transferred between rolls and transported. 10. The substrate processing according to claim 6, wherein any one of cleaning, deposition film formation, etching, modification, patterning, cutting, heating, and cooling is performed on the substrate. apparatus.