JP2009038415A - Package structure of crystal oscillator - Google Patents

Package structure of crystal oscillator Download PDF

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Publication number
JP2009038415A
JP2009038415A JP2007198302A JP2007198302A JP2009038415A JP 2009038415 A JP2009038415 A JP 2009038415A JP 2007198302 A JP2007198302 A JP 2007198302A JP 2007198302 A JP2007198302 A JP 2007198302A JP 2009038415 A JP2009038415 A JP 2009038415A
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Prior art keywords
driver
crystal
crystal oscillator
cavity
ceramic package
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Japanese (ja)
Inventor
Masaharu Wake
正治 和気
Shingo Yamamoto
愼吾 山本
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2007198302A priority Critical patent/JP2009038415A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a reliable ceramic package that can be used even in a quartz oscillator single body in a crystal oscillator stored in the ceramic package by combining a piezoelectric device, such as crystal, with a driver IC having an oscillation circuit, or the like. <P>SOLUTION: In a manufacturing process, another cavity for the driver IC is provided in addition to a cavity for sealing the piezoelectric device in the ceramic package, the piezoelectric device is sealed in inert gas, and then the driver IC is mounted before sealing by resin separately. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は水晶等の圧電デバイスを使用した圧電発振器に係り、特に水晶発振器と水晶振
動子、両方で使用できる共用パッケージを提供することでコストの低減が可能になると共
に、信頼性の向上、実装面積の低減が可能な 水晶発振器のパッケージ構造に関する。 The present invention relates to a piezoelectric oscillator using a piezoelectric device such as a crystal, and in particular, by providing a shared package that can be used for both a crystal oscillator and a crystal resonator, it is possible to reduce costs and improve reliability and mounting. The present invention relates to a crystal oscillator package structure capable of reducing the area.

水晶発振器等の圧電発振器は、一定の周波数を得るためなどに電気回路等に広く利用さ
れている。 Piezoelectric oscillators such as crystal oscillators are widely used in electric circuits and the like in order to obtain a constant frequency.

図４に一般的な面実装水晶発振器のセラミックパッケージの断面図、図５に一般的な面
実装水晶発振器のセラミックパッケージの蓋体を除いた状態の上視図を示す。 FIG. 4 is a cross-sectional view of a ceramic package of a general surface-mount crystal oscillator, and FIG. 5 is a top view of the general surface-mount crystal oscillator without the lid of the ceramic package.

この水晶発振器は発振回路等を有するドライバIC２と、圧電物質である水晶片１とをセ
ラミックパッケージ３内の同一キャビティに実装したものである。 In this crystal oscillator, a driver IC 2 having an oscillation circuit or the like and a crystal piece 1 which is a piezoelectric material are mounted in the same cavity in a ceramic package 3.

セラミックパッケージ３のキャビティ内壁は水晶片１とドライバIC２を実装するために
階段状に形成されており、この例ではセラミックシートが４層積層されている。 The cavity inner wall of the ceramic package 3 is formed in a staircase shape for mounting the crystal piece 1 and the driver IC 2. In this example, four layers of ceramic sheets are laminated.

ドライバIC２はこのセラミックパッケージ３のキャビティ底部に、シリコン樹脂に銀フ
ィラーを含有させた導電性樹脂等を用いてダイボンディング１１で実装され、さらにワイ
ヤボンディング４でドライバIC２の回路とセラミックパッケージ３が接続される。 The driver IC 2 is mounted on the bottom of the cavity of the ceramic package 3 by die bonding 11 using a conductive resin in which a silver filler is contained in silicon resin, and the circuit of the driver IC 2 and the ceramic package 3 are connected by wire bonding 4. Is done.

このセラミックパッケージ３の第２層上面にはドライバIC２からのワイヤボンディング
４接続のためのボンディングパッド９が形成されている。また、セラミックパッケージ３
の第３層上面には水晶片１を実装するための電極６が形成されている。 A bonding pad 9 for connecting the wire bonding 4 from the driver IC 2 is formed on the upper surface of the second layer of the ceramic package 3. Ceramic package 3
An electrode 6 for mounting the crystal piece 1 is formed on the upper surface of the third layer.

水晶片１の上下面には励振電極１４と連絡した接続電極が形成されており、導電性樹脂
等でセラミックパッケージ３の電極６と接続され、セラミックパッケージ３の内層電極１
２を介してドライバIC２と接続される。 A connection electrode connected to the excitation electrode 14 is formed on the upper and lower surfaces of the crystal piece 1, and is connected to the electrode 6 of the ceramic package 3 with a conductive resin or the like, and the inner layer electrode 1 of the ceramic package 3.
2 is connected to the driver IC 2.

このようにして形成された発振回路は、セラミックパッケージ３の内層電極１２を介し
て外部電極１０に接続され、一定の周波数を周辺デバイスに供給する。また、ドライバIC
２の電源は同様に外部電極１０から内層電極１２を介して供給される。 The oscillation circuit thus formed is connected to the external electrode 10 via the inner layer electrode 12 of the ceramic package 3 and supplies a constant frequency to the peripheral device. Also, driver IC
Similarly, the power source 2 is supplied from the external electrode 10 through the inner layer electrode 12.

セラミックパッケージ３のキャビティ上辺には、蓋体７を溶接するための電極１５が設
けられており、窒素等の不活性ガス中でセラミックパッケージ３と蓋体７を溶接等でシー
リングすることにより、水晶片１とドライバIC２は同時に封じされる。 An electrode 15 for welding the lid body 7 is provided on the upper side of the cavity of the ceramic package 3, and the ceramic package 3 and the lid body 7 are sealed by welding or the like in an inert gas such as nitrogen. The piece 1 and the driver IC 2 are sealed at the same time.

これにより、大気中に含まれる酸素による水晶片１の励振電極１４の酸化を防止し、出
力周波数の経年変化を小さくする。 Thereby, the oxidation of the excitation electrode 14 of the crystal piece 1 by oxygen contained in the atmosphere is prevented, and the secular change of the output frequency is reduced.

水晶振動子を水晶発振器として流用する技術として、特開2006-128462号公報に示され
るように、あらかじめプリント基板上に実装されたドライバICの上に水晶振動子のパッケ
ージをかぶせるように追加実装する方式があるが、本方式ではプリント基板の製造工程が
複雑になり、また、プリント基板の浮遊容量のばらつきによって発振回路定数が変動する
ため、実装するプリント基板ごとに発振回路定数の検討が必要になるという問題がある。 As a technique for utilizing a crystal resonator as a crystal oscillator, as shown in Japanese Patent Laid-Open No. 2006-128462, additional mounting is performed so that a crystal resonator package is placed on a driver IC mounted on a printed circuit board in advance. Although there is a method, this method complicates the printed circuit board manufacturing process, and the oscillation circuit constant varies due to the variation in the stray capacitance of the printed circuit board. Therefore, it is necessary to examine the oscillation circuit constant for each printed circuit board to be mounted. There is a problem of becoming.

特開2006−128462号公報JP 2006-128462

従来の水晶発振器のパッケージ構造では、ドライバICのダイボンディング、ワイヤボン
ディング後に、水晶片を実装し、窒素等の不活性ガス中で一括で封じるため、封じ完了時
点で水晶発振器として完成しており、封じ後に水晶片のみを水晶振動子に流用する等の融
通は利かなかった。 In the conventional crystal oscillator package structure, after die bonding and wire bonding of the driver IC, a crystal piece is mounted and sealed in an inert gas such as nitrogen, so that it is completed as a crystal oscillator when sealing is completed. There was no flexibility such as diverting only the crystal piece to the crystal unit after sealing.

また、封じ後、水晶片に形成された励振電極に内部接続用の導電性樹脂から発生するガ
ス成分等が付着することにより、周波数の経年変化が発生するが、従来のセラミックパッ
ケージでは水晶片とドライバICが同一キャビティ内に封じられているため、キャビティ内
により多くの導電性樹脂が存在し、発生するガス成分も多くなるため周波数精度の経年変
化を小さくすることは困難であった。 Also, after sealing, the secular change in frequency occurs due to the gas components generated from the conductive resin for internal connection adhering to the excitation electrode formed on the crystal piece. Since the driver IC is sealed in the same cavity, there is more conductive resin in the cavity, and more gas components are generated, so it is difficult to reduce the secular change in frequency accuracy.

本発明の目的は水晶片封じ後のセラミックパッケージを水晶振動子としても兼用で使用
可能とすることによって、製造コストを抑えることができ、また、封じ内にドライバICが
存在しないため、経年変化を最小限に抑えることができる信頼性の高い水晶発振器のパッ
ケージ構造を提供することにある。 The purpose of the present invention is to reduce the manufacturing cost by enabling the ceramic package after the quartz piece sealing to be used also as a quartz crystal resonator, and because there is no driver IC in the sealing, It is an object of the present invention to provide a highly reliable crystal oscillator package structure that can be minimized.

上記目的を達成するために、本発明に係る水晶発振器は、セラミックパッケージに、水
晶片を収納するキャビティの他に、ドライバICを収納する第２のキャビティを設け、内層
電極によって接続する構造とした事を特徴とする。この際、後から実装するドライバICは
不活性ガスで封じる必要は無く、シリコン系樹脂等のある程度の耐湿性と機械的保護で十
分である。 In order to achieve the above object, a crystal oscillator according to the present invention has a structure in which a ceramic package is provided with a second cavity for accommodating a driver IC in addition to a cavity for accommodating a crystal piece, and is connected by an inner layer electrode. It is characterized by things. At this time, the driver IC to be mounted later does not need to be sealed with an inert gas, and a certain degree of moisture resistance and mechanical protection such as silicon resin are sufficient.

製造工程において、あらかじめ水晶片実装、封じまで行った状態で量産/貯蔵しておき
、水晶発振子として使用する場合はそのまま使用する。 In the manufacturing process, it is mass-produced / stored in a state where crystal pieces are mounted and sealed in advance, and used as it is when used as a crystal oscillator.

水晶発振器として使用する場合は、第２のキャビティにドライバICを実装し、ボンディ
ング接続語にシリコン樹脂等で保護して水晶発振器として機能させる事ができる。 When used as a crystal oscillator, a driver IC can be mounted in the second cavity, and the bonding connection word can be protected with silicon resin or the like to function as a crystal oscillator.

本発明によれば、水晶発振器と水晶発振子のパッケージを共用化出来るため、量産効果
によって製造コストの低減を図ることができる。 According to the present invention, since the crystal oscillator and crystal oscillator packages can be shared, the manufacturing cost can be reduced by the mass production effect.

また、水晶片を収納するキャビティ内にドライバICが存在しないため、接続用の導電性
樹脂から発生するガス成分を最小限に抑え、ガス成分が水晶片に形成された励振電極に付
着することによる経年変化を抑えることができ、信頼性の高い水晶発振器を提供すること
ができる。 In addition, since there is no driver IC in the cavity that accommodates the crystal piece, the gas component generated from the conductive resin for connection is minimized, and the gas component adheres to the excitation electrode formed on the crystal piece. A secular change can be suppressed, and a highly reliable crystal oscillator can be provided.

以下に本発明に係る水晶発振器のパッケージ構造の一形態を説明する。   An embodiment of a crystal oscillator package structure according to the present invention will be described below.

本実施の形態では圧電デバイスの一例である水晶発振器について添付図面に基づいて説
明する。なお、以下に記載するものは本発明の一形態にすぎず、本発明はこれに限定され
るものではない。 In this embodiment, a crystal oscillator which is an example of a piezoelectric device will be described with reference to the accompanying drawings. In addition, what is described below is only one form of this invention, and this invention is not limited to this.

図１に本実施形態に係る水晶発振器の縦断面図を示す。   FIG. 1 is a longitudinal sectional view of a crystal oscillator according to this embodiment.

水晶発振器はセラミックパッケージ３の上面キャビティに水晶片１を実装し、裏面のキ
ャビティにドライバIC２を実装する構成である。 The crystal oscillator has a configuration in which the crystal piece 1 is mounted on the upper surface cavity of the ceramic package 3 and the driver IC 2 is mounted on the back surface cavity.

セラミックパッケージ３の内部にはそれぞれ接続電極を形成するために階段状に凹陥部
が形成されており、本実施例ではセラミックシートを５層積層する構造となっている。 In the ceramic package 3, concave portions are formed stepwise to form connection electrodes, respectively, and in this embodiment, five ceramic sheets are laminated.

セラミックパッケージ３の第４層上面には水晶片１を実装するための電極６が形成され
ている。 An electrode 6 for mounting the crystal piece 1 is formed on the upper surface of the fourth layer of the ceramic package 3.

水晶片１の上下面には励振電極１４と連絡した接続電極が形成されており、導電性樹脂
５でセラミックパッケージ３の電極６と接続される。 Connection electrodes connected to the excitation electrodes 14 are formed on the upper and lower surfaces of the crystal piece 1, and are connected to the electrodes 6 of the ceramic package 3 by the conductive resin 5.

電極６は導電性樹脂との接続性を向上させるため、通常、タングステンのメタライズ上
に、ニッケル下地メッキとＡｇメッキを施し形成される。 In order to improve the connectivity with the conductive resin, the electrode 6 is usually formed by performing nickel base plating and Ag plating on tungsten metallization.

その後、窒素等の不活性ガス中で蓋体７を溶接等でシーリングすることにより、キャビ
ティ内に不活性ガスを封じ込め、水晶片１の励振電極表面の酸化を抑える。 Thereafter, the lid 7 is sealed by welding or the like in an inert gas such as nitrogen, so that the inert gas is contained in the cavity, and oxidation of the surface of the excitation electrode of the crystal piece 1 is suppressed.

水晶片１のみをセラミックパッケージ３に実装した状態の縦断面図を図２に示す。ここ
までの組み立てで水晶片１の励振電極は外部電極と接続されており、水晶振動子として使
用することが可能である。 FIG. 2 shows a longitudinal sectional view of the state in which only the crystal piece 1 is mounted on the ceramic package 3. In the assembly so far, the excitation electrode of the crystal piece 1 is connected to the external electrode and can be used as a crystal resonator.

セラミックパッケージ３の第２層にはドライバIC２からボンディング接続するためのボ
ンディングパッド９が形成されている。 Bonding pads 9 for bonding connection from the driver IC 2 are formed on the second layer of the ceramic package 3.

ドライバIC２はこのセラミックパッケージ３のキャビティ第３層底部に、シリコン樹脂
に銀フィラーを含有させた導電性樹脂等を用いてダイボンディング１１で実装され、さら
にワイヤボンディング４でボンディングパッド９に接続される。 The driver IC 2 is mounted on the bottom of the third layer of the cavity of the ceramic package 3 by die bonding 11 using a conductive resin in which a silver filler is contained in silicon resin, and further connected to the bonding pad 9 by wire bonding 4. .

これにより、ドライバIC２の回路と水晶片１がセラミックパッケージ３の内層電極１２
を介して接続され、水晶発振回路を形成する。 Thereby, the circuit of the driver IC 2 and the crystal piece 1 are connected to the inner layer electrode 12 of the ceramic package 3.
To form a crystal oscillation circuit.

ドライバIC２とボンディングワイヤ４は耐湿性向上と機械的保護のため、シリコン等の
樹脂でカバーする。 The driver IC 2 and the bonding wire 4 are covered with a resin such as silicon for improving moisture resistance and mechanical protection.

図２にセラミックパッケージ３に水晶片１のみを実装し、水晶振動子として使用する状
態の縦断面図を示す。 FIG. 2 shows a longitudinal sectional view of a state in which only the crystal piece 1 is mounted on the ceramic package 3 and used as a crystal resonator.

通常、水晶振動子として使用する場合、水晶片１の励振電極は外部電極と接続されてお
り、外部に発振回路と負荷容量を接続して使用する。 Normally, when used as a crystal resonator, the excitation electrode of the crystal piece 1 is connected to an external electrode, and an oscillation circuit and a load capacitor are connected to the outside.

発振回路は、接続される後段のＬＳｉやICに内蔵されているものを使用するが、多くの
場合、別に、負荷容量を基板上に追加で実装して接続しなければならず、実装面積が増え
てしまう。 The oscillation circuit uses the one built in the LSi or IC in the subsequent stage to be connected. In many cases, however, the load capacity must be additionally mounted on the substrate and connected. It will increase.

本発明によれば、ボンディングワイヤ４の接続用ボンディングパッド９の間隔をあらか
じめ負荷容量に使用する積層セラミックコンデンサの電極間隔に合わせて設計しておくこ
とで、水晶振動子として使用する場合はドライバIC２の代わりに、負荷容量の積層セラミ
ックコンデンサをドライバIC２用の裏面キャビティ内に内蔵する事も可能となる。 According to the present invention, the driver IC 2 can be used for a crystal resonator by designing the distance between the bonding pads 9 for connecting the bonding wires 4 in advance to the electrode distance of the multilayer ceramic capacitor used for the load capacity. Instead of this, it is possible to incorporate a monolithic ceramic capacitor having a load capacity in the back surface cavity for the driver IC 2.

ドライバIC２の代わりに負荷容量１６を内蔵した場合の縦断面図を図６に示す。   FIG. 6 shows a longitudinal sectional view when a load capacitor 16 is incorporated instead of the driver IC 2.

図３に本発明による他の実施例の縦断面図を示す。   FIG. 3 shows a longitudinal sectional view of another embodiment according to the present invention.

本実施例の場合、ドライバIC用の別のキャビティを裏面ではなく、上面に並べて形成し
ている。 In the case of this embodiment, another cavity for the driver IC is formed side by side on the upper surface instead of the back surface.

本実施例ではセラミックシートの積層枚数は３層であり、第一の実施例に比べ、低背化
に有利である。 In this embodiment, the number of laminated ceramic sheets is three, which is advantageous for reducing the height as compared with the first embodiment.

以上のように本発明によれば、水晶発振器と水晶発振子のパッケージを共用化出来るた
め、量産効果によって製造コストの低減を図ることができる。 As described above, according to the present invention, the package of the crystal oscillator and the crystal oscillator can be shared, so that the manufacturing cost can be reduced by the mass production effect.

また、水晶片を収納するキャビティ内にドライバICが存在しないため、キャビティ内で
、接続用の導電性樹脂から発生するガス成分を最小限に抑え、ガス成分が水晶片に形成さ
れた励振電極に付着することによる経年変化を抑えることができ、信頼性の高い水晶発振
器を提供することができる。 In addition, since there is no driver IC in the cavity that accommodates the crystal piece, the gas component generated from the conductive resin for connection is minimized in the cavity, and the gas component is applied to the excitation electrode formed on the crystal piece. A secular change due to adhesion can be suppressed, and a highly reliable crystal oscillator can be provided.

本発明による一実施形態に係る水晶発振器の縦断面図。1 is a longitudinal sectional view of a crystal oscillator according to an embodiment of the present invention. 本発明による一実施形態に係る水晶振動子として使用する場合の縦断面図。The longitudinal section in the case of using as a crystal oscillator concerning one embodiment by the present invention. 本発明による他の実施形態に係る水晶発振器の縦断面図。The longitudinal cross-sectional view of the crystal oscillator which concerns on other embodiment by this invention. 従来技術による一般的な水晶発振器の縦断面図。The longitudinal cross-sectional view of the general crystal oscillator by a prior art. 従来技術による一般的な水晶発振器の蓋体を取り外した状態を示す上視図。The upper view which shows the state which removed the cover body of the general crystal oscillator by a prior art. 本発明による一実施形態に係る負荷容量内蔵時の縦断面図。The longitudinal section at the time of built-in load capacity concerning one embodiment by the present invention.

符号の説明Explanation of symbols

１…水晶片、２…ドライバＩＣ、３…セラミックパッケージ、４…ワイヤボンディング、
５…導電性樹脂、６…水晶片接続用電極、７…蓋体、８…蓋体溶接部、９…ボンディング
パッド、１０…外部電極、１１…ダイボンディング、１２…内部電極、１３…シリコン系
樹脂、１４…励振電極、１５…蓋体溶接用電極、１６…積層セラミックコンデンサ（負荷
容量）。 1 ... crystal piece, 2 ... driver IC, 3 ... ceramic package, 4 ... wire bonding,
DESCRIPTION OF SYMBOLS 5 ... Conductive resin, 6 ... Electrode for crystal piece connection, 7 ... Lid body, 8 ... Lid welding part, 9 ... Bonding pad, 10 ... External electrode, 11 ... Die bonding, 12 ... Internal electrode, 13 ... Silicon type Resin, 14 ... excitation electrode, 15 ... electrode for lid welding, 16 ... multilayer ceramic capacitor (load capacity).

Claims (3)

水晶等の圧電デバイスと、発振回路等を有するドライバICを組み合わせてセラミックパ
ッケージに収納し、１つの部品として使用する水晶発振器において、圧電デバイスを封じ
るキャビティの他にドライバIC用の別のキャビティを設け、圧電デバイスを不活性ガス中
で封じた後に、ドライバICを実装し、別に樹脂で封じることを特徴とした水晶発振器の製
造方法。 A piezoelectric device such as a crystal and a driver IC having an oscillation circuit are combined and housed in a ceramic package. In a crystal oscillator used as a single component, a separate cavity for the driver IC is provided in addition to the cavity that seals the piezoelectric device. A method for manufacturing a crystal oscillator, comprising: sealing a piezoelectric device in an inert gas, mounting a driver IC, and sealing the resin separately with a resin. 請求項１に記載の水晶発振器において、ドライバICを圧電デバイスと別のキャビティに
収納することにより、ドライバICを実装しない状態でも水晶振動子として使用可能とし、
水晶発振器と水晶振動子どちらにも使用可能とすることが出来る共用パッケージ構造。 The crystal oscillator according to claim 1, wherein the driver IC is housed in a cavity separate from the piezoelectric device, so that it can be used as a crystal resonator even when the driver IC is not mounted.
Shared package structure that can be used for both crystal oscillators and crystal oscillators. 請求項２に記載の共用パッケージ構造において、ドライバICを収納するキャビティに、
負荷容量を接続できる電極を儲けることにより、本部品を水晶振動子として使用する際に
は負荷容量を内蔵可能とした共用パッケージ構造。 In the shared package structure according to claim 2, a cavity for storing the driver IC is provided.
A shared package structure that enables load capacitance to be built in when this part is used as a crystal unit by providing electrodes that can be connected to load capacitance.
JP2007198302A 2007-07-31 2007-07-31 Package structure of crystal oscillator Pending JP2009038415A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007198302A JP2009038415A (en) 2007-07-31 2007-07-31 Package structure of crystal oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007198302A JP2009038415A (en) 2007-07-31 2007-07-31 Package structure of crystal oscillator

Publications (1)

Publication Number Publication Date
JP2009038415A true JP2009038415A (en) 2009-02-19

Family

ID=40439992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007198302A Pending JP2009038415A (en) 2007-07-31 2007-07-31 Package structure of crystal oscillator

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Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107862A (en) * 2012-11-30 2014-06-09 Seiko Epson Corp Temperature compensation type oscillator, electronic apparatus, and mobile body
JP2021027410A (en) * 2019-07-31 2021-02-22 株式会社大真空 Piezoelectric vibration device base
JP2021048519A (en) * 2019-09-19 2021-03-25 株式会社大真空 Base for piezoelectric vibration device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107862A (en) * 2012-11-30 2014-06-09 Seiko Epson Corp Temperature compensation type oscillator, electronic apparatus, and mobile body
JP2021027410A (en) * 2019-07-31 2021-02-22 株式会社大真空 Piezoelectric vibration device base
JP7322574B2 (en) 2019-07-31 2023-08-08 株式会社大真空 Base for piezoelectric vibration device
JP2021048519A (en) * 2019-09-19 2021-03-25 株式会社大真空 Base for piezoelectric vibration device
JP7375404B2 (en) 2019-09-19 2023-11-08 株式会社大真空 Base for piezoelectric vibration devices

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