JP2009038098A - Light receiving/emitting device and manufacturing method thereof - Google Patents
Light receiving/emitting device and manufacturing method thereof Download PDFInfo
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- JP2009038098A JP2009038098A JP2007199114A JP2007199114A JP2009038098A JP 2009038098 A JP2009038098 A JP 2009038098A JP 2007199114 A JP2007199114 A JP 2007199114A JP 2007199114 A JP2007199114 A JP 2007199114A JP 2009038098 A JP2009038098 A JP 2009038098A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
Abstract
Description
本発明は、受発光デバイス及びその製造方法に関し、特に発光素子とそれから発せられた光を受光する受光素子とを備えた受発光デバイス及びその製造方法に関する。 The present invention relates to a light emitting / receiving device and a method for manufacturing the same, and more particularly to a light receiving / emitting device including a light emitting element and a light receiving element that receives light emitted therefrom and a method for manufacturing the same.
受発光デバイスは、非接触状態において、物体の有無検出、位置検出等を行える。例えば、プリンタ、ファクシミリ等の事務機器において、受発光デバイスは、用紙供給機構、用紙搬送機構等の用紙の有無検出や位置検出に使用されている。 The light emitting / receiving device can detect the presence or absence of an object, detect the position, and the like in a non-contact state. For example, in office equipment such as a printer and a facsimile, the light emitting / receiving device is used for detecting the presence or position of a paper such as a paper supply mechanism and a paper transport mechanism.
受発光デバイスは、光を発する発光素子と、この発光素子から発せられる光を受光する受光素子とを備えている。発光素子及び受光素子は基板上に実装され、発光素子、受光素子はそれぞれ光透過性樹脂により被覆される。 The light emitting / receiving device includes a light emitting element that emits light and a light receiving element that receives light emitted from the light emitting element. The light emitting element and the light receiving element are mounted on a substrate, and the light emitting element and the light receiving element are each coated with a light transmissive resin.
受発光デバイスは、発光素子と受光素子との間において誤動作の発生を防止するために、双方の間に遮光体を設けている。下記特許文献１に記載される受発光デバイス（フォトリフレクタ）において、遮光体にはNiめっき等の遮光膜が使用されている。また、下記特許文献２に記載される受発光デバイス（受発光素子）並びに下記特許文献３に記載される受発光デバイス（絶縁基板実装型赤外線リモコン受光モジュール）には遮光性樹脂が使用されている。
前述の受発光デバイスにおいては、誤動作の防止策について記載されているものの、受発光効率については配慮されていない。 In the light emitting / receiving device described above, although measures for preventing malfunction are described, light emitting / receiving efficiency is not considered.
本発明は、発光素子と受光素子との間における誤動作の発生を防止することができるとともに、受発光効率を向上することができる受発光デバイス及びその製造方法を提供することである。 An object of the present invention is to provide a light emitting / receiving device capable of preventing the occurrence of malfunction between a light emitting element and a light receiving element and improving light receiving / emitting efficiency and a method for manufacturing the same.
上記課題を解決するため、本発明の第１の特徴は、受発光デバイスにおいて、基板と、基板上に実装された発光素子と、発光素子から離間された領域において基板上に実装され、発光素子から発せられる光を受光する受光素子と、発光素子を覆い、発光素子から発せられる光を透過しかつ受光素子に集光するリフレクタ面を有する第１の光透過性樹脂部と、受光素子を覆い、発光素子から発せられる光を透過し、第１の光透過性樹脂部に対して離間した領域に配設された第２の光透過性樹脂部と、第１の光透過性樹脂部と第２の光透過性樹脂部との間に配設され、発光素子から発せられる光を遮蔽し、更に第１の光透過性樹脂部のリフレクタ面に沿って配設され、リフレクタ面において第１の光透過性樹脂部とともにリフレクタを構成する遮光樹脂部とを備える。ここで、第１の特徴に係る受発光デバイスにおいて、発光素子は赤外発光ダイオードであることが好ましい。また、第１の特徴に係る受発光デバイスにおいて、第１の光透過性樹脂部、第２の光透過性樹脂部のそれぞれは同一材料であることが好ましい。また、第１の特徴に係る受発光デバイスにおいて、第１の光透過性樹脂部の形状は半円柱であることが好ましい。更に、第１の特徴に係る受発光デバイスにおいて、基板上の発光素子の中心軸と受光素子の中心軸とが一致されていることが好ましい。 In order to solve the above-described problem, a first feature of the present invention is that in a light emitting and receiving device, the substrate, the light emitting element mounted on the substrate, and the light emitting element mounted on the substrate in a region separated from the light emitting element. A light-receiving element that receives light emitted from the light-emitting element; a first light-transmitting resin portion that covers the light-emitting element; has a reflector surface that transmits light collected from the light-emitting element and collects the light; A second light-transmitting resin portion that transmits light emitted from the light-emitting element and is disposed in a region separated from the first light-transmitting resin portion, the first light-transmitting resin portion, and the first light-transmitting resin portion Between the two light-transmitting resin portions, shields light emitted from the light emitting element, and is further disposed along the reflector surface of the first light-transmitting resin portion. The light shielding resin part together with the light shielding resin part And a resin portion. Here, in the light emitting / receiving device according to the first feature, the light emitting element is preferably an infrared light emitting diode. In the light receiving and emitting device according to the first feature, it is preferable that the first light transmissive resin portion and the second light transmissive resin portion are made of the same material. In the light receiving and emitting device according to the first feature, the first light transmitting resin portion preferably has a semi-cylindrical shape. Furthermore, in the light emitting / receiving device according to the first feature, it is preferable that the central axis of the light emitting element on the substrate coincides with the central axis of the light receiving element.
本発明の第２の特徴は、受発光デバイスの製造方法において、基板上に発光素子及びこの発光素子から発せられる光を受光する受光素子を基板上に互いに離間して実装する工程と、発光素子を覆い、発光素子から発せられる光を透過しかつ受光素子に集光するリフレクタ面を有する第１の光透過性樹脂部を形成するとともに、受光素子を覆い、発光素子から発せられる光を透過し、第１の光透過性樹脂部に対して離間した領域において第２の光透過性樹脂部を形成する工程と、第１の光透過性樹脂部と第２の光透過性樹脂部との間において、発光素子から発せられる光を遮蔽する遮光樹脂部を形成するとともに、この遮光樹脂部を第１の光透過性樹脂部のリフレクタ面に沿って形成し、リフレクタ面において第１の光透過性樹脂部とともにリフレクタを形成する工程とを備える。また、本発明の第２の特徴に係る受発光デバイスの製造方法において、第１の光透過性樹脂部及び第２の光透過性樹脂部を形成する工程はモールド成型により第１の光透過性樹脂部及び第２の光透過性樹脂部を同一工程において形成する工程であることが好ましい。更に、第２の特徴に係る受発光デバイスの製造方法において、遮光樹脂部を形成する工程は、第１の光透過性樹脂部及び第２の光透過性樹脂部を形成した後に、塗布により遮光樹脂部を形成する工程であることが好ましい。 According to a second aspect of the present invention, in the method for manufacturing a light receiving and emitting device, a step of mounting a light emitting element on a substrate and a light receiving element that receives light emitted from the light emitting element, spaced from each other on the substrate, and the light emitting element Forming a first light-transmitting resin portion having a reflector surface that transmits light collected from the light-emitting element and collects it on the light-receiving element, covers the light-receiving element, and transmits light emitted from the light-emitting element. A step of forming the second light-transmitting resin portion in a region spaced from the first light-transmitting resin portion, and between the first light-transmitting resin portion and the second light-transmitting resin portion And forming a light shielding resin portion that shields light emitted from the light emitting element, and forming the light shielding resin portion along the reflector surface of the first light transmitting resin portion, and the first light transmitting property on the reflector surface. Along with the resin part And forming a collector. In the method for manufacturing a light receiving and emitting device according to the second aspect of the present invention, the step of forming the first light transmissive resin portion and the second light transmissive resin portion may include forming the first light transmissive resin by molding. It is preferable that the resin portion and the second light transmissive resin portion be formed in the same step. Furthermore, in the method for manufacturing the light receiving and emitting device according to the second feature, the step of forming the light shielding resin portion includes forming the first light transmissive resin portion and the second light transmissive resin portion, and then shielding the light by applying. The step of forming the resin portion is preferable.
本発明によれば、発光素子と受光素子との間における誤動作の発生を防止することができるとともに、受発光効率を向上することができる受発光デバイス及びその製造方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, while being able to prevent generation | occurrence | production of malfunctioning between a light emitting element and a light receiving element, the light emitting / receiving device which can improve light receiving / emitting efficiency, and its manufacturing method can be provided.
次に、図面を参照して、本発明の実施の形態を説明する。以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。ただし、図面は模式的なものであり、現実のものとは異なる。また、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれている。 Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, the drawings are schematic and different from actual ones. Moreover, the part from which the relationship and ratio of a mutual dimension differ also in between drawings is contained.
また、以下に示す実施の形態はこの発明の技術的思想を具体化するための装置や方法を例示するものであって、この発明の技術的思想は各構成部品の配置等を下記のものに特定するものでない。この発明の技術的思想は、特許請求の範囲において、種々の変更を加えることができる。 Further, the following embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention is to arrange the components and the like as follows. Not specific. The technical idea of the present invention can be variously modified within the scope of the claims.
（第１の実施の形態）
本発明の第１の実施の形態は、非接触状態において物体の有無検出、位置検出等を行える受発光デバイスに本発明を提供した例を説明するものである。第１の実施の形態に係る受発光デバイスは、例えばプリンタ、ファクシミリ等の事務機器に組み込まれ、用紙供給機構、用紙搬送機構等の用紙の有無検出や位置検出に使用される。更に、第１の実施の形態に係る受発光デバイスは、例えばパーソナルコンピュータの内臓若しくは外付け記憶デバイスに組み込まれ、CD、DVD等の記憶メディアの有無検出に使用される。なお、第１の実施の形態に係る受発光デバイスは、これらの使用用途の例示に限定されるものではない。
(First embodiment)
The first embodiment of the present invention describes an example in which the present invention is provided for a light emitting / receiving device capable of detecting the presence / absence of an object, detecting a position, and the like in a non-contact state. The light emitting / receiving device according to the first embodiment is incorporated in office equipment such as a printer and a facsimile, for example, and is used for detecting the presence or position of paper such as a paper supply mechanism and a paper transport mechanism. Furthermore, the light emitting / receiving device according to the first embodiment is incorporated in, for example, a built-in personal computer or an external storage device, and is used for detecting the presence of a storage medium such as a CD or a DVD. Note that the light emitting and receiving device according to the first embodiment is not limited to these examples of usage.
［受発光デバイスの構成］
図１乃至図４に示すように、第１の実施の形態に係る受発光デバイス１は、基板２と、基板２上に実装された発光素子３と、発光素子３から離間された領域において基板２上に実装され、発光素子３から発せられる光を受光する受光素子４と、発光素子３を覆い、発光素子３から発せられる光を透過しかつ受光素子４に集光するリフレクタ面６１Ａを有する第１の光透過性樹脂部６１と、受光素子４を覆い、発光素子３から発せられる光を透過し、第１の光透過性樹脂部６１に対して離間した領域に配設された第２の光透過性樹脂部６２と、第１の光透過性樹脂部６１と第２の光透過性樹脂部６２との間に配設され、発光素子３から発せられる光を遮蔽し、更に第１の光透過性樹脂部６１のリフレクタ面６１Ａに沿って配設され、リフレクタ面６１Ａにおいて第１の光透過性樹脂部６１とともにリフレクタ６５を構成する遮光樹脂部６３とを備えている。
[Configuration of light emitting / receiving device]
As shown in FIGS. 1 to 4, the light receiving and emitting device 1 according to the first embodiment includes a substrate 2, a light emitting element 3 mounted on the substrate 2, and a substrate in a region separated from the light emitting element 3. 2, a light receiving element 4 that receives light emitted from the light emitting element 3, and a reflector surface 61 </ b> A that covers the light emitting element 3, transmits light emitted from the light emitting element 3, and collects the light on the light receiving element 4. The second light-transmitting resin portion 61 and the light-receiving element 4 are covered, the light emitted from the light-emitting element 3 is transmitted, and the second light-transmitting resin portion 61 is disposed in a region separated from the first light-transmitting resin portion 61. The light-transmitting resin portion 62, the first light-transmitting resin portion 61, and the second light-transmitting resin portion 62 are disposed between the first light-transmitting resin portion 62, the light-transmitting resin portion 62, and the first light-transmitting resin portion 62. The reflector is disposed along the reflector surface 61A of the light transmitting resin portion 61 of the reflector. Together with the first light-transmissive resin portion 61 and a light shielding resin portion 63 constituting the reflector 65 at 61A.
基板２は、その表面上に電極（内部端子）２１〜２４を備え、更に図示しないが表面上、内部若しくは裏面上に配線を備えた配線基板である。この基板２の母体には例えばガラスエポキシ基板を実用的に使用することができ、電極２１〜２４及び配線には銅箔の表面にNiめっき膜を形成した積層膜を実用的に使用することができる。 The substrate 2 is a wiring substrate provided with electrodes (internal terminals) 21 to 24 on the surface thereof, and further provided with wiring on the front surface, inside or on the back surface, although not shown. For example, a glass epoxy substrate can be practically used as the base material of the substrate 2, and a laminated film in which a Ni plating film is formed on the surface of the copper foil can be practically used for the electrodes 21 to 24 and the wiring. it can.
発光素子３には第１の実施の形態において赤外発光ダイオードが使用されている。赤外発光ダイオードは、例えば化合物半導体具体的にはGaAsにより構成され、p型アノード領域とn型カソード領域とにより構成されている。第１の実施の形態において、赤外発光ダイオードは850 nmの波長を持つ赤外光を発する。発光素子３詳細には赤外発光ダイオードのp型アノード領域は基板２上に配設された電極２１にワイヤ５１を通して電気的に接続されている。n型カソード領域は発光素子３の裏面下に配設された電極２２に電気的に接続されている。ワイヤ５１はワイヤボンディング法によりボンディングされている。第１の実施の形態に係る発光素子３は、必ずしもこの寸法に限定されるものではないが、0.18 mm×0.14 mmの平面サイズを有している。 As the light emitting element 3, an infrared light emitting diode is used in the first embodiment. The infrared light emitting diode is made of, for example, a compound semiconductor, specifically, GaAs, and is made of a p-type anode region and an n-type cathode region. In the first embodiment, the infrared light emitting diode emits infrared light having a wavelength of 850 nm. Specifically, the p-type anode region of the infrared light emitting diode is electrically connected to the electrode 21 disposed on the substrate 2 through the wire 51. The n-type cathode region is electrically connected to an electrode 22 disposed under the back surface of the light emitting element 3. The wire 51 is bonded by a wire bonding method. The light emitting element 3 according to the first embodiment is not necessarily limited to this dimension, but has a planar size of 0.18 mm × 0.14 mm.
受光素子４には第１の実施の形態においてバイポーラトランジスタが使用されている。バイポーラトランジスタは、例えばシリコン半導体により構成され、エミッタ領域、ベース領域及びコレクタ領域により構成されている。受光素子４詳細にはバイポーラトランジスタのエミッタ領域は基板２上に配設された電極２３にワイヤ５２を通して電気的に接続されている。コレクタ領域は受光素子４の裏面下に配設された電極２４に電気的に接続されている。ベース領域においては、発光素子３から発せられる赤外光が受光される。第１の実施の形態に係る受光素子４は、必ずしもこの寸法に限定されるものではないが、0.40 mm×0.65 mmの平面サイズを有し、0.23 mmの厚みを有している。 In the light receiving element 4, a bipolar transistor is used in the first embodiment. The bipolar transistor is composed of, for example, a silicon semiconductor, and is composed of an emitter region, a base region, and a collector region. In detail, the emitter region of the bipolar transistor is electrically connected to the electrode 23 disposed on the substrate 2 through the wire 52. The collector region is electrically connected to an electrode 24 disposed under the back surface of the light receiving element 4. In the base region, infrared light emitted from the light emitting element 3 is received. The light receiving element 4 according to the first embodiment is not necessarily limited to this dimension, but has a planar size of 0.40 mm × 0.65 mm and a thickness of 0.23 mm.
図２乃至図３中、発光素子３は基板２の表面上の右側に配設され、受光素子４は発光素子３から離間され基板２の表面上の左側に配設されている。第１の実施の形態において、発光素子３の中心位置と受光素子４の中心位置との間の距離は0.72 mmに設定されている。図３に示すように、発光素子３の中心軸と受光素子４の中心軸とは一致されており、第１の実施の形態に係る受発光デバイス１の発光効率を向上することができる。 2 to 3, the light emitting element 3 is disposed on the right side on the surface of the substrate 2, and the light receiving element 4 is separated from the light emitting element 3 and disposed on the left side on the surface of the substrate 2. In the first embodiment, the distance between the center position of the light emitting element 3 and the center position of the light receiving element 4 is set to 0.72 mm. As shown in FIG. 3, the central axis of the light emitting element 3 and the central axis of the light receiving element 4 coincide with each other, and the light emission efficiency of the light receiving and emitting device 1 according to the first embodiment can be improved.
図１乃至図４に示すように、第１の光透過性樹脂部６１は、底面が基板２の表面上に接触し、上面が基板２の表面に平行な円柱を軸方向に沿って切断した半円柱を備えている。第１の実施の形態において、この第１の光透過性樹脂部６１の半円柱は、例えば半径0.45 mmの円弧を有し、図２及び図３に示すように軸方向に沿って切断された面が受光素子４に対向する。第１の光透過性樹脂部６１の軸方向に沿って切断された面から0.22 mm〜0.26 mmの位置に中心位置が設定されるように、発光素子３が基板２上に実装される。半円柱の円弧面は第１の実施の形態においてリフレクタ面６１Ａである。このリフレクタ面６１Ａは発光素子３から発せられる光を受光素子４に集光するリフレクタ（６５）を構築する。第１の光透過性樹脂部６１は、発光素子３及びその直下の電極２２を覆い、基板２の表面上にこの基板２に接触して構成されている。第１の実施の形態において、第１の光透過性樹脂部６１は可視光の波長領域具体的には750 nm以下の波長をカットする。第１の光透過性樹脂部６１には例えば染料が混入されたエポキシ樹脂を実用的に使用することができる。 As shown in FIGS. 1 to 4, the first light transmissive resin portion 61 has a bottom surface in contact with the surface of the substrate 2, and a top surface parallel to the surface of the substrate 2 is cut along the axial direction. It has a semi-cylinder. In the first embodiment, the semi-cylinder of the first light transmissive resin portion 61 has an arc having a radius of 0.45 mm, for example, and is cut along the axial direction as shown in FIGS. The surface faces the light receiving element 4. The light emitting element 3 is mounted on the substrate 2 so that the center position is set at a position of 0.22 mm to 0.26 mm from the surface cut along the axial direction of the first light transmissive resin portion 61. The semicircular circular arc surface is the reflector surface 61A in the first embodiment. The reflector surface 61A constructs a reflector (65) for condensing the light emitted from the light emitting element 3 onto the light receiving element 4. The first light transmissive resin portion 61 covers the light emitting element 3 and the electrode 22 immediately below the light emitting element 3, and is configured in contact with the substrate 2 on the surface of the substrate 2. In the first embodiment, the first light transmissive resin portion 61 cuts a wavelength region of visible light, specifically, a wavelength of 750 nm or less. For the first light transmissive resin portion 61, for example, an epoxy resin mixed with a dye can be practically used.
第２の光透過性樹脂部６２は、底面が基板２の表面上に接触し、上面が基板２の表面に平行な直方体により構成されている。第２の光透過性樹脂部６２の上面は第１の光透過性樹脂部６１の上面と同一高さに設定されている。第２の光透過性樹脂部６２において、発光素子３に対向する側面を除き、それ以外の３つの側面は基板２の同一個所の側面と同一面により構成されている。図２及び図３に示すように、第２の光透過性樹脂部６２の発光素子３に対向する側面と第１の光透過性樹脂部６１の軸方向に沿って切断された面との間の最小の離間寸法は例えば0.11 mm〜0.15 mmに設定されている。この互いに離間された第２の光透過性樹脂部６２の１つの側面と第１の光透過性樹脂部６１の軸方向に沿って切断された面とは、基板２の表面から遠ざかるに従って互いに寸法が広がるテーパ面により構成されており、トランスファーモールド成型の際の成型金型の抜け面を生成している。このテーパ面の抜け角度は基板２の表面から例えば85度〜89度に設定されている。第２の光透過性樹脂部６２の材料は第１の実施の形態において第１の光透過性樹脂部６１の材料と同一である。 The second light transmissive resin portion 62 is configured by a rectangular parallelepiped whose bottom surface is in contact with the surface of the substrate 2 and whose top surface is parallel to the surface of the substrate 2. The upper surface of the second light transmissive resin portion 62 is set to the same height as the upper surface of the first light transmissive resin portion 61. In the second light transmissive resin portion 62, except for the side surface facing the light emitting element 3, the other three side surfaces are constituted by the same surface as the side surface of the same portion of the substrate 2. As shown in FIG.2 and FIG.3, between the side surface which opposes the light emitting element 3 of the 2nd light transmissive resin part 62, and the surface cut | disconnected along the axial direction of the 1st light transmissive resin part 61 The minimum separation dimension is set to 0.11 mm to 0.15 mm, for example. One side surface of the second light-transmitting resin portion 62 and the surface cut along the axial direction of the first light-transmitting resin portion 61 are dimensioned with each other as the distance from the surface of the substrate 2 increases. Is formed by a taper surface that spreads out, and generates a removal surface of the molding die at the time of transfer molding. The angle at which the tapered surface is removed is set to, for example, 85 to 89 degrees from the surface of the substrate 2. The material of the second light transmissive resin part 62 is the same as the material of the first light transmissive resin part 61 in the first embodiment.
遮光性樹脂６３は、第１の光透過性樹脂部６１及び第２の光透過性樹脂部６２が配設された領域以外において基板２の表面上に配設され、第１の光透過性樹脂部６１と第２の光透過性樹脂部６２との間並びに第１の光透過性樹脂部６１のリフレクタ面６１Ａの外壁に沿って配設されている。この遮光性樹脂６３は、基本的に発光素子３から受光素子４への誤動作を誘発する光を遮蔽する機能を有し、更にリフレクタ面６１Ａにおいて第１の光透過性樹脂部６１とともにリフレクタ６５を構築する。図５には、発光素子３から発せられた光がリフレクタ６５に反射され、更に物体１０に反射され、受光素子４に受光される、光路が矢印において示されている。第１の実施の形態において、遮光性樹脂６３には、例えば遮光性を有するチタン粉末が混入されたエポキシ樹脂を実用的に使用することができる。 The light shielding resin 63 is disposed on the surface of the substrate 2 in a region other than the region where the first light transmissive resin portion 61 and the second light transmissive resin portion 62 are disposed. Between the part 61 and the second light transmissive resin part 62 and along the outer wall of the reflector surface 61A of the first light transmissive resin part 61. The light-shielding resin 63 basically has a function of shielding light that induces a malfunction from the light-emitting element 3 to the light-receiving element 4, and further, the reflector 65 together with the first light-transmissive resin portion 61 is provided on the reflector surface 61A. To construct. In FIG. 5, the light path from which the light emitted from the light emitting element 3 is reflected by the reflector 65, further reflected by the object 10, and received by the light receiving element 4 is indicated by an arrow. In the first embodiment, for the light shielding resin 63, for example, an epoxy resin mixed with a titanium powder having a light shielding property can be used practically.
［受発光デバイスの発光特性］
次に、第１の実施の形態に係る受発光デバイス１の発光特性を説明する。ここでは、図５に示すように、受発光デバイス１の発光素子２から発せられる光が物体１０の表面に反射され、その反射光が受光素子４に受光されるモデルにおいて、受光デバイス１の発光特性を説明する。物体１０は例えば用紙である。また、符号tは受発光デバイス１の表面と物体１０の表面との間の離間距離である。
[Light emission characteristics of light emitting / receiving device]
Next, the light emission characteristics of the light receiving and emitting device 1 according to the first embodiment will be described. Here, as shown in FIG. 5, in a model in which light emitted from the light emitting element 2 of the light receiving and emitting device 1 is reflected on the surface of the object 10 and the reflected light is received by the light receiving element 4, the light emission of the light receiving device 1. The characteristics will be described. The object 10 is, for example, paper. Further, the symbol t is a separation distance between the surface of the light emitting / receiving device 1 and the surface of the object 10.
図６に受発光デバイス１と物体１０との間の離間距離tと発光素子２から発せられた光に対する受光素子４における相対受光量との関係を示す。図中、横軸は離間距離t（mm）であり、縦軸は相対受光量である。第１の実施の形態に係る受発光デバイス１のリフレクタ６５を備えていない比較例としての発光デバイスは符号Ｂに示すように離間距離tが0.2 mm〜0.3 mm付近において相対受光量のピークを有し、この相対受光量のピーク値は60％未満である。 FIG. 6 shows the relationship between the distance t between the light emitting / receiving device 1 and the object 10 and the relative amount of light received by the light receiving element 4 with respect to the light emitted from the light emitting element 2. In the figure, the horizontal axis is the separation distance t (mm), and the vertical axis is the relative received light amount. The light emitting device as a comparative example which does not include the reflector 65 of the light receiving and emitting device 1 according to the first embodiment has a peak of the relative light receiving amount when the separation distance t is around 0.2 mm to 0.3 mm as shown by reference numeral B. And the peak value of this relative received light amount is less than 60%.
これに対して、第１の実施の形態に係る受発光デバイス１は符号Ａに示すように離間距離tが0.2 mm〜0.3 mm付近において同様に相対受光量のピークを有し、この相対受光量のピーク値は約100％である。すなわち、受発光デバイス１においては、比較例としての受発光デバイスに対して、相対受光量を約30 ％以上向上することができる。 On the other hand, the light receiving and emitting device 1 according to the first embodiment similarly has a peak of the relative light receiving amount when the separation distance t is in the vicinity of 0.2 mm to 0.3 mm as indicated by reference symbol A. The peak value of is about 100%. That is, in the light receiving / emitting device 1, the relative light receiving amount can be improved by about 30% or more compared to the light receiving / emitting device as the comparative example.
このように構成される第１の実施の形態に係る受発光デバイス１においては、発光素子３と受光素子４との間に遮光性樹脂６３を備えているので、発光素子３から受光素子４への光漏れを防止することができ、誤動作の発生を防止することができるとともに、受光素子３から発せられる光を受光素子４に集光するリフレクタ６５を備えたので、発光素子３から発せられる光を受光素子４において効率良く受光することができ、受発光効率を向上することができる。 In the light receiving and emitting device 1 according to the first embodiment configured as described above, since the light shielding resin 63 is provided between the light emitting element 3 and the light receiving element 4, the light emitting element 3 to the light receiving element 4. In addition to preventing light from leaking, it is possible to prevent malfunction, and since the reflector 65 that condenses the light emitted from the light receiving element 3 to the light receiving element 4 is provided, the light emitted from the light emitting element 3 Can be efficiently received by the light receiving element 4, and the light receiving and emitting efficiency can be improved.
更に、第１の実施の形態に係る受発光デバイス１においては、リフレクタ面６１Ａを有する第１の光透過性樹脂部６１とそのリフレクタ面６１Ａに沿って配設された第２の光透過性樹脂部６２とによりリフレクタ６５を構成することができるので、特別に反射板等の構成を必要とせず、簡易な構成において受発光効率を向上することができる。また、特別な反射板等の構成を必要としないので、部品点数を増加せずに受発光デバイス１の受発光効率を向上することができる。 Furthermore, in the light emitting / receiving device 1 according to the first embodiment, the first light transmissive resin portion 61 having the reflector surface 61A and the second light transmissive resin disposed along the reflector surface 61A. Since the reflector 65 can be configured by the part 62, the configuration of a reflector or the like is not particularly required, and the light receiving and emitting efficiency can be improved with a simple configuration. In addition, since a special configuration such as a reflector is not required, the light emitting / receiving efficiency of the light emitting / receiving device 1 can be improved without increasing the number of components.
［受発光デバイスの製造方法］
次に、前述の第１の実施の形態に係る受発光デバイス１の製造方法を図７乃至図１０を用いて説明する。
[Manufacturing method of light emitting / receiving device]
Next, a method for manufacturing the light emitting / receiving device 1 according to the first embodiment will be described with reference to FIGS.
まず最初に、基板２が準備される（図７参照。）。第１の実施の形態において、基板２は複数の受発光デバイス１を製造することができる基板である。ここでは、この個数に限定されるものではないが、基板２には４個の受発光デバイス１を製造することができる。 First, the substrate 2 is prepared (see FIG. 7). In the first embodiment, the substrate 2 is a substrate on which a plurality of light emitting / receiving devices 1 can be manufactured. Here, although not limited to this number, four light emitting / receiving devices 1 can be manufactured on the substrate 2.
図７に示すように、基板２の表面上に複数の発光素子３及びそれに離間して複数の受光素子４が実装される。発光素子３は基板２の表面上に形成された電極２２上に図示しない導電性接着剤を介して電気的にかつ機械的に接続される。更に、発光素子３は基板２の表面上に形成された電極２１にワイヤ５１を通して電気的に接続される。一方、受光素子４は基板２の表面上に形成された電極２４上に図示しない導電性接着剤を介して電気的にかつ機械的に接続される。更に、受光素子４は基板２の表面上に形成された電極２３にワイヤ５２を通して電気的に接続される。 As shown in FIG. 7, a plurality of light emitting elements 3 and a plurality of light receiving elements 4 are mounted on the surface of the substrate 2 so as to be spaced apart from each other. The light emitting element 3 is electrically and mechanically connected to an electrode 22 formed on the surface of the substrate 2 via a conductive adhesive (not shown). Furthermore, the light emitting element 3 is electrically connected to the electrode 21 formed on the surface of the substrate 2 through the wire 51. On the other hand, the light receiving element 4 is electrically and mechanically connected to an electrode 24 formed on the surface of the substrate 2 via a conductive adhesive (not shown). Further, the light receiving element 4 is electrically connected through a wire 52 to an electrode 23 formed on the surface of the substrate 2.
図８に示すように、基板２の表面上において、発光素子３を覆う第１の光透過性樹脂部６１を形成し、この第１の光透過性樹脂部６１を形成する工程と同一製造工程において、受光素子４を覆う第２の光透過性樹脂部６２を第１の光透過性樹脂部６１から離間して形成する。第１の光透過性樹脂部６１及び第２の光透過性樹脂部６２はトランスファーモールド成型により形成される。すなわち、第１の光透過性樹脂部６１及び第２の光透過性樹脂部６２は図示しない成型用金型により形作られる。第１の光透過性樹脂部６１及び第２の光透過性樹脂部６２は、いずれも前述のように発光素子３から発せられる光（赤外光）を透過しつつ、余分な可視光をカットする、例えば適度な染料が混入された熱硬化性若しくは紫外線硬化性のエポキシ樹脂により形成される。第１の光透過性樹脂部６１にはリフレクタ面６１Ａが成型の段階で形作られる。すなわち、成型用金型にはリフレクタ面６１Ａを成型する形面が配設されている。また、２個の発光素子３が隣接する方向においてこのそれぞれの発光素子３をモールドする２個の第１の光透過性樹脂部６１は連接されている。同様に、２個の受光素子４が隣接する方向においてこのそれぞれの受光素子４をモールドする２個の第２の光透過性樹脂部６２は連接されている。これは、トランスファーモールド成型の際に樹脂の流れを良くし、巣の発生を防止することができる。なお、製造工程数は増加するが、例えば光透過性を相互に変えたい場合には、第１の光透過性樹脂部６１及び第２の光透過性樹脂部６２はそれぞれ別々の工程により形成される。 As shown in FIG. 8, the same manufacturing process as the process of forming the first light transmissive resin portion 61 covering the light emitting element 3 on the surface of the substrate 2 and forming the first light transmissive resin portion 61 is performed. 2, the second light transmissive resin portion 62 that covers the light receiving element 4 is formed away from the first light transmissive resin portion 61. The first light transmissive resin portion 61 and the second light transmissive resin portion 62 are formed by transfer molding. That is, the first light transmissive resin portion 61 and the second light transmissive resin portion 62 are formed by a molding die (not shown). Both the first light transmissive resin portion 61 and the second light transmissive resin portion 62 transmit excess light (infrared light) emitted from the light emitting element 3 as described above, and cut off excess visible light. For example, it is formed of a thermosetting or ultraviolet curable epoxy resin mixed with an appropriate dye. A reflector surface 61A is formed on the first light transmitting resin portion 61 at the stage of molding. That is, a molding surface for molding the reflector surface 61A is provided in the molding die. Further, the two first light-transmitting resin portions 61 that mold the respective light emitting elements 3 are connected in the direction in which the two light emitting elements 3 are adjacent to each other. Similarly, in the direction in which the two light receiving elements 4 are adjacent to each other, the two second light transmissive resin portions 62 that mold the respective light receiving elements 4 are connected. This improves the flow of the resin during transfer molding and can prevent the formation of nests. Although the number of manufacturing steps increases, for example, when it is desired to change the light transmittance, the first light transmissive resin portion 61 and the second light transmissive resin portion 62 are formed in separate steps. The
図９に示すように、基板２の表面上において、第１の光透過性樹脂部６１の周囲特にリフレクタ面６１Ａの側面に沿って、並びに第１の光透過性樹脂部６１と第２の光透過性樹脂部６２との間の離間スペースに沿って、樹脂滴下ノズル１１から遮光性樹脂６３Ｐが滴下塗布される。遮光性樹脂６３Ｐは、硬化前の遮光性樹脂であり、液体状で流動性を有する。すなわち、遮光性樹脂６３Ｐは滴下塗布（ポッティング）法により形成される。遮光性樹脂６３Ｐには前述のようにチタンが混入されたエポキシ樹脂を実用的に使用することができる。 As shown in FIG. 9, on the surface of the substrate 2, the first light transmissive resin portion 61 and the second light are arranged around the first light transmissive resin portion 61, particularly along the side surface of the reflector surface 61 </ b> A. A light shielding resin 63P is dropped from the resin dropping nozzle 11 along the space between the transparent resin portion 62 and the space. The light shielding resin 63P is a light shielding resin before curing, and is liquid and fluid. That is, the light shielding resin 63P is formed by a dropping application (potting) method. As described above, an epoxy resin mixed with titanium can be used practically for the light shielding resin 63P.
図１０に示すように、滴下塗布された遮光性樹脂６３Ｐが硬化され、遮光性樹脂部６３が形成されるとともに、第１の光透過性樹脂部６１のリフレクタ面６１Ａとそれに沿って形成された遮光性樹脂部６３とによりリフレクタ６５が完成する。第１の実施の形態において、遮光性樹脂部６３の基板２の表面からの高さは第１の光透過性樹脂部６１及び第２の光透過性樹脂部６２の基板２の表面からの高さと同一に設定されている。なお、遮光性樹脂部６３の基板２の表面からの高さは、第１の光透過性樹脂部６１及び第２の光透過性樹脂部６２の基板２の表面からの高さに比べて若干低く設定してもよい。 As shown in FIG. 10, the light-shielding resin 63P applied by dripping is cured to form the light-shielding resin portion 63, and the reflector surface 61A of the first light-transmissive resin portion 61 and the first light-transmissive resin portion 61 are formed along the same. The reflector 65 is completed by the light shielding resin portion 63. In the first embodiment, the height of the light shielding resin portion 63 from the surface of the substrate 2 is the height of the first light transmitting resin portion 61 and the second light transmitting resin portion 62 from the surface of the substrate 2. Are set the same. Note that the height of the light-shielding resin portion 63 from the surface of the substrate 2 is slightly larger than the height of the first light-transmissive resin portion 61 and the second light-transmissive resin portion 62 from the surface of the substrate 2. It may be set low.
この後、第１の光透過性樹脂部６１、第２の光透過性樹脂部６２及び遮光性樹脂部６３を含む基板２が受発光デバイス１毎にダイシングされ、前述の図１乃至図４に示す受発光デバイス１を完成させることができる。 Thereafter, the substrate 2 including the first light-transmitting resin portion 61, the second light-transmitting resin portion 62, and the light-blocking resin portion 63 is diced for each light receiving and emitting device 1, and the above-described FIGS. The light emitting / receiving device 1 shown can be completed.
このような第１の実施の形態に係る受発光デバイス１の製造方法においては、発光素子３を覆う第１の光透過性樹脂部６１を形成する工程と同一製造工程においてリフレクタ面６１Ａを形成することができ、遮光性樹脂部６３を形成する工程と同一製造工程においてリフレクタ面６１Ａに沿って遮光性樹脂部６３を形成しリフレクタ６５を形成することができるので、リフレクタ６５を形成する工程を実質的に省略することができる。すなわち、受発光デバイス１の製造方法において、リフレクタ６５を形成する工程を第１の光透過性樹脂部６１及び遮光性樹脂部６３を形成する工程と兼用することができるので、製造工程数を削減することができる。 In the method of manufacturing the light receiving and emitting device 1 according to the first embodiment, the reflector surface 61A is formed in the same manufacturing process as the process of forming the first light transmitting resin portion 61 that covers the light emitting element 3. The light-blocking resin portion 63 can be formed along the reflector surface 61A and the reflector 65 can be formed in the same manufacturing process as the step of forming the light-blocking resin portion 63, so that the step of forming the reflector 65 is substantially performed. Can be omitted. In other words, in the method for manufacturing the light emitting / receiving device 1, the step of forming the reflector 65 can be combined with the step of forming the first light transmissive resin portion 61 and the light shielding resin portion 63, thereby reducing the number of manufacturing steps. can do.
（第２の実施の形態）
本発明の第２の実施の形態は、前述の第１の実施の形態に係る受発光デバイス１において、雑音比（S/N）を向上した例を説明するものである。図１１に示すように、第２の実施の形態に係る受発光デバイス１は、受光素子４の外周囲にも遮光性樹脂部６３を備えている。詳細には、遮光性樹脂部６３は、第２の光透過性樹脂部６２の発光素子３に対向する側面と、更に第２の光透過性樹脂部６２の残りの３つの側面とに配設されている。この後者の第２の光透過性樹脂部６２の３つの側面の表面は基板２の側面の表面と一致している。また、この第２の光透過性樹脂部６２のすべての側面を囲む遮光性樹脂部６３は第１の光透過性樹脂部６１の側面を囲む遮光性樹脂部６３と同一製造工程において形成されている。
(Second Embodiment)
The second embodiment of the present invention describes an example in which the noise ratio (S / N) is improved in the light emitting / receiving device 1 according to the first embodiment described above. As shown in FIG. 11, the light receiving and emitting device 1 according to the second embodiment also includes a light shielding resin portion 63 on the outer periphery of the light receiving element 4. Specifically, the light-shielding resin portion 63 is disposed on the side surface of the second light-transmitting resin portion 62 facing the light emitting element 3 and further on the remaining three side surfaces of the second light-transmitting resin portion 62. Has been. The surfaces of the three side surfaces of the latter second light transmissive resin portion 62 coincide with the surfaces of the side surfaces of the substrate 2. Further, the light shielding resin portion 63 surrounding all the side surfaces of the second light transmitting resin portion 62 is formed in the same manufacturing process as the light shielding resin portion 63 surrounding the side surfaces of the first light transmitting resin portion 61. Yes.
このより構成される第２の実施の形態に係る受発光デバイス１においては、前述の第１の実施の形態に係る受発光デバイス１により得られる効果と同様の効果を奏することができるとともに、受光素子４の側面の全域を遮光性樹脂部６３により取り囲んでいるので、誤動作を誘発する受光素子４への光の入射を防止することができる。すなわち、第２の実施の形態に係る受発光デバイス１においては、雑音比を向上することができる。 The light emitting / receiving device 1 according to the second embodiment configured as described above can achieve the same effects as those obtained by the light emitting / receiving device 1 according to the first embodiment described above, Since the entire side surface of the element 4 is surrounded by the light-shielding resin portion 63, it is possible to prevent light from entering the light receiving element 4 that induces a malfunction. That is, in the light emitting / receiving device 1 according to the second embodiment, the noise ratio can be improved.
（その他の実施の形態）
上記のように、本発明は第１の実施の形態及び第２の実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものでない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかになる。
(Other embodiments)
As described above, the present invention has been described according to the first embodiment and the second embodiment. However, the description and the drawings which form a part of this disclosure do not limit the present invention. From this disclosure, various alternative embodiments, examples, and operational techniques will be apparent to those skilled in the art.
１…受発光デバイス
２…基板
２１〜２４…電極
３…発光素子
４…受光素子
５１、５２…ワイヤ
６１…第１の光透過性樹脂部
６１Ａ…リフレクタ面
６２…第２の光透過性樹脂部
６３…遮光性樹脂部
６３Ｐ…滴下樹脂
６５…リフレクタ
１０…物体
１１…樹脂滴下ノズル
DESCRIPTION OF SYMBOLS 1 ... Light receiving / emitting device 2 ... Board | substrate 21-24 ... Electrode 3 ... Light emitting element 4 ... Light receiving element 51, 52 ... Wire 61 ... 1st light transmissive resin part 61A ... Reflector surface 62 ... 2nd light transmissive resin part 63 ... Light-shielding resin portion 63P ... Drip resin 65 ... Reflector 10 ... Object 11 ... Resin dripping nozzle
Claims (8)
前記基板上に実装された発光素子と、
前記発光素子から離間された領域において前記基板上に実装され、前記発光素子から発せられる光を受光する受光素子と、
前記発光素子を覆い、前記発光素子から発せられる光を透過しかつ前記受光素子に集光するリフレクタ面を有する第１の光透過性樹脂部と、
前記受光素子を覆い、前記発光素子から発せられる光を透過し、前記第１の光透過性樹脂部に対して離間した領域に配設された第２の光透過性樹脂部と、
前記第１の光透過性樹脂部と前記第２の光透過性樹脂部との間に配設され、前記発光素子から発せられる光を遮蔽し、更に前記第１の光透過性樹脂部のリフレクタ面に沿って配設され、前記リフレクタ面において前記第１の光透過性樹脂部とともにリフレクタを構成する遮光樹脂部と、
を備えたことを特徴とする受発光デバイス。 A substrate,
A light emitting device mounted on the substrate;
A light receiving element that is mounted on the substrate in a region spaced from the light emitting element and receives light emitted from the light emitting element;
A first light-transmitting resin portion that covers the light-emitting element, has a reflector surface that transmits the light emitted from the light-emitting element and focuses the light on the light-receiving element;
A second light-transmitting resin portion that covers the light-receiving element, transmits light emitted from the light-emitting element, and is disposed in a region separated from the first light-transmitting resin portion;
The first light transmissive resin portion is disposed between the first light transmissive resin portion and the second light transmissive resin portion, shields light emitted from the light emitting element, and further reflects the first light transmissive resin portion. A light shielding resin portion that is disposed along a surface and forms a reflector together with the first light transmissive resin portion on the reflector surface;
A light emitting and receiving device comprising:
前記発光素子を覆い、前記発光素子から発せられる光を透過しかつ前記受光素子に集光するリフレクタ面を有する第１の光透過性樹脂部を形成するとともに、前記受光素子を覆い、前記発光素子から発せられる光を透過し、前記第１の光透過性樹脂部に対して離間した領域において第２の光透過性樹脂部を形成する工程と、
前記第１の光透過性樹脂部と前記第２の光透過性樹脂部との間において、前記発光素子から発せられる光を遮蔽する遮光樹脂部を形成するとともに、この遮光樹脂部を前記第１の光透過性樹脂部のリフレクタ面に沿って形成し、前記リフレクタ面において前記第１の光透過性樹脂部とともにリフレクタを形成する工程と、
を備えたことを特徴とする受発光デバイスの製造方法。 Mounting a light emitting element on a substrate and a light receiving element that receives light emitted from the light emitting element, spaced apart from each other on the substrate; and
Forming a first light-transmitting resin portion that covers the light-emitting element, has a reflector surface that transmits light collected from the light-emitting element and collects the light on the light-receiving element, and covers the light-receiving element; Forming a second light-transmitting resin portion in a region that transmits light emitted from the first light-transmitting resin portion and spaced from the first light-transmitting resin portion;
A light shielding resin portion that shields light emitted from the light emitting element is formed between the first light transmissive resin portion and the second light transmissive resin portion, and the light shielding resin portion is formed as the first light transmissive resin portion. Forming the reflector along the reflector surface of the light transmissive resin portion, and forming the reflector together with the first light transmissive resin portion on the reflector surface;
A method of manufacturing a light receiving and emitting device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007199114A JP2009038098A (en) | 2007-07-31 | 2007-07-31 | Light receiving/emitting device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007199114A JP2009038098A (en) | 2007-07-31 | 2007-07-31 | Light receiving/emitting device and manufacturing method thereof |
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| JP2009038098A true JP2009038098A (en) | 2009-02-19 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012189892A (en) * | 2011-03-11 | 2012-10-04 | Rohm Co Ltd | Optical device, manufacturing method of optical device, and electronic apparatus |
| JP2012235178A (en) * | 2012-09-07 | 2012-11-29 | Sharp Corp | Semiconductor device and connector |
| US8608388B2 (en) | 2009-04-27 | 2013-12-17 | Sharp Kabushiki Kaisha | Semiconductor device and connector |
| JP2016187060A (en) * | 2016-08-04 | 2016-10-27 | ローム株式会社 | Optical semiconductor device |
-
2007
- 2007-07-31 JP JP2007199114A patent/JP2009038098A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8608388B2 (en) | 2009-04-27 | 2013-12-17 | Sharp Kabushiki Kaisha | Semiconductor device and connector |
| JP2012189892A (en) * | 2011-03-11 | 2012-10-04 | Rohm Co Ltd | Optical device, manufacturing method of optical device, and electronic apparatus |
| JP2012235178A (en) * | 2012-09-07 | 2012-11-29 | Sharp Corp | Semiconductor device and connector |
| JP2016187060A (en) * | 2016-08-04 | 2016-10-27 | ローム株式会社 | Optical semiconductor device |
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