JP2009032914A5 - - Google Patents

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JP2009032914A5
JP2009032914A5 JP2007195594A JP2007195594A JP2009032914A5 JP 2009032914 A5 JP2009032914 A5 JP 2009032914A5 JP 2007195594 A JP2007195594 A JP 2007195594A JP 2007195594 A JP2007195594 A JP 2007195594A JP 2009032914 A5 JP2009032914 A5 JP 2009032914A5
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etching solution
etching
solution according
potassium
carbon atoms
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JP2007195594A
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JP2009032914A (en
JP4897604B2 (en
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Claims (7)

下記一般式（１）で表わされる化合物（以下、「Ｅ成分」という）を含有することを特徴とするフォトマスク製造用のエッチング液。
Figure 2009032914
（上記式中のＲｆ１およびＲｆ２は、アルキル基のＨの全部をＦで置き換えた炭素数が１〜４の直鎖のフッ化炭素基、または分岐鎖を有するフッ化炭素基であり、Ｘは、カリウム、リチウム、またはナトリウムイオンである。） An etching solution for producing a photomask , comprising a compound represented by the following general formula (1) (hereinafter referred to as “E component”).
Figure 2009032914
(Rf1 and Rf2 in the above formula are a linear fluorocarbon group having 1 to 4 carbon atoms in which all of H of the alkyl group is replaced with F, or a fluorocarbon group having a branched chain, and X is , Potassium, lithium, or sodium ions.) 前記フッ化炭素基の炭素数が、いずれも４である請求項１に記載のエッチング液。   The etching solution according to claim 1, wherein each of the fluorocarbon groups has 4 carbon atoms. 前記Ｘが、カリウムである請求項１または２に記載のエッチング液。   The etching solution according to claim 1 or 2, wherein X is potassium. エッチング液１００質量部に対して、Ｅ成分を０．００１〜０．１質量部含有している請求項１に記載のエッチング液。   The etching liquid of Claim 1 which contains 0.001-0.1 mass part of E components with respect to 100 mass parts of etching liquids. エッチング液のエッチング剤濃度が、１５〜２５質量％である請求項１に記載のエッチング液。   The etching solution according to claim 1 whose etching agent concentration of an etching solution is 15-25 mass%. エッチング剤が、硝酸第二セリウムアンモニウムと、過塩素酸または酢酸とを含む請求項５に記載のエッチング液。   The etching solution according to claim 5, wherein the etching agent contains ceric ammonium nitrate and perchloric acid or acetic acid. 表面張力が、１９〜２５ｍＮ／ｍである請求項１に記載のエッチング液。   The etching solution according to claim 1, wherein the surface tension is 19 to 25 mN / m.
JP2007195594A 2007-07-27 2007-07-27 Etching solution for photomask manufacturing Active JP4897604B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007195594A JP4897604B2 (en) 2007-07-27 2007-07-27 Etching solution for photomask manufacturing

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Application Number Priority Date Filing Date Title
JP2007195594A JP4897604B2 (en) 2007-07-27 2007-07-27 Etching solution for photomask manufacturing

Publications (3)

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JP2009032914A JP2009032914A (en) 2009-02-12
JP2009032914A5 true JP2009032914A5 (en) 2009-07-16
JP4897604B2 JP4897604B2 (en) 2012-03-14

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JP2007195594A Active JP4897604B2 (en) 2007-07-27 2007-07-27 Etching solution for photomask manufacturing

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4940102B2 (en) * 2007-10-25 2012-05-30 株式会社 マイクロプロセス Etching composition and semiconductor device manufacturing method using the same
JP5293114B2 (en) * 2008-11-26 2013-09-18 三菱電機株式会社 Manufacturing method of semiconductor device
JP5442987B2 (en) * 2008-12-10 2014-03-19 株式会社Ｄｎｐファインケミカル Etching solution and method for producing black matrix
JP5678464B2 (en) * 2009-07-14 2015-03-04 株式会社リコー Ink jet recording ink, ink cartridge, ink jet recording apparatus
JP2011108975A (en) * 2009-11-20 2011-06-02 Dnp Fine Chemicals Co Ltd Etchant for conductive film and method of etching conductive film
JP2011198901A (en) * 2010-03-18 2011-10-06 Dnp Fine Chemicals Co Ltd Etchant for conductive film, and etching method of the conductive film
JP5872213B2 (en) * 2011-09-08 2016-03-01 公益財団法人神奈川科学技術アカデミー Method for manufacturing surface-expanded foil

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02285081A (en) * 1989-04-25 1990-11-22 Sanyo Chem Ind Ltd Etching solution
JPH05271967A (en) * 1992-03-24 1993-10-19 The Ink Tec Kk Liquid etchant composition and method for etching chromium thin film
US6555510B2 (en) * 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
JP4005437B2 (en) * 2002-07-26 2007-11-07 ザ・インクテック株式会社 Etching solution for nickel-based thin film
US6884338B2 (en) * 2002-12-16 2005-04-26 3M Innovative Properties Company Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor

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