JP2009032819A - Manufacturing method of electronic-device, and electronic device using the method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To make by an easy manufacturing method a transistor and wiring which use carbon-nanotubes and have large current-capacities. <P>SOLUTION: The manufacturing method has a process for orienting and growing in the direction vertical to a catalyzer formed on a substrate a carbon-nanotube bundle having a high density of carbon-nanotube thin lines and having a uniformity in their heights, a process for dropping in the side-surface vicinity of the carbon-nanotube bundle an organic solvent of a liquid having an affinity with the bundle, a process for blowing by using a nitrogen gas the organic solvent from the opposite side to the intended direction of falling the bundle sideways toward the caron-nanotube bundle as to fall sideways the vertically stood carbon-nanotube bundle with the organic solvent, and a process for so contacting the fallen carbon-nanotube bundle with the surface of the substrate as to have a predetermined length (region). After drying the organic solvent, a back-gate transistor is manufactured by using a part of the contacting region as a channel portion, or a wiring is manufactured by using it as a conductor. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an electronic device and an electronic device using the same, and more particularly, a manufacturing method suitable for easily and efficiently manufacturing an electronic device having a component composed of a bundle of carbon nanotubes, and the manufacturing thereof. The present invention relates to an electronic device having, for example, a transistor channel and a wiring, which is manufactured by the method and is based on a bundle of carbon nanotubes.

  Carbon nanotubes (CNT; Carbon Nanotube) have a fine structure on the order of nanometers, and carbon nanotubes grown to have semiconducting properties have very high carrier mobility. On the other hand, carbon nanotubes grown to have metallic properties have the characteristics that the maximum applicable current density is very high. Is held.

  Conventionally, a transistor in which a carbon nanotube is applied to a channel material has been proposed (for example, Non-Patent Document 1, Patent Documents 1 and 2). Usually, these transistors (FET; Field Effect Transistor) have a structure in which a channel is formed in a direction parallel to the surface of the substrate in the same manner as Si-FETs that have been manufactured in large quantities. In a transistor using carbon nanotubes, a carbon nanotube bundle serving as a channel is arranged in parallel with the substrate surface between the source and drain electrodes on the substrate. In other words, the carbon nanotube bundle used as the channel is grown as described above. It is a structure in which the direction is horizontal.

  FIG. 9 is a schematic diagram of such a conventional carbon nanotube transistor configuration example. A catalyst 102 for growing carbon nanotubes is formed on a substrate 101. A source electrode 104 and a drain electrode 105 are formed on both ends of individually independent carbon nanotubes 103 grown from the catalyst, and between the two electrodes. The gate electrode 106 is formed so that a gate voltage can be applied to the carbon nanotube 103 through an insulating layer or a substrate.

In order to form the transistor as shown in FIG. 9, for example, the carbon nanotube 103 is grown from the catalyst 102 on the source electrode 104 (or drain electrode 105) side, and the drain electrode 105 (or the gate voltage application region is straddled). There is a method (Non-Patent Document 1) for reaching the source electrode 104). In addition, a method of growing carbon nanotubes in a lateral direction from the lateral surfaces of two opposing catalyst layers to form carbon nanotubes that are long in the lateral direction (Patent Document 1), or organic in an electrolytic plating tank. Fill the solvent, disperse the carbon nanotubes in this, and then put the substrate with the source / drain electrodes (the gate electrode is formed on the back side of the substrate) on the main surface and the carbon nanotube thin wire in the solvent, A method has been proposed in which a transistor is formed by immersing a negative electrode metal electrode and performing electroplating so that carbon nanotubes are bridged between source and drain electrodes (Patent Document 2).
H. Ohnaka et al, Jpn. J. Appl. Phys. 45 (2006) 5485 JP 2002-118248 A JP 2007-12665 A

However, the drain current _ID in a transistor using a conventional carbon nanotube is generally about a microampere. For example, in the conventional report example, the gate width is 100 μm, depending on the number of carbon nanotube thin wires forming a channel, The drain current _ID is reported to be about several tens of nA to several hundred μA (Non-patent Document 1).

As described above, when the obtained drain current _ID is small and the resistance of the transistor is high, a power loss due to heat generation occurs, and a large drive voltage is required to obtain a required characteristic. As a result, it becomes a big problem in incorporating such a transistor into an integrated circuit. On the other hand, when this transistor is operated at a high frequency, if the obtained current is small, it is greatly affected by the parasitic capacitance, and there is a problem that the transistor does not operate normally depending on the situation.

  For this reason, in a transistor using carbon nanotubes, it is important to obtain a transistor capable of obtaining a larger current than a conventionally proposed transistor.

  In order to increase the transistor current, one of the means that can be directly taken into account in the structure of the transistor is that the channel width between the source and drain electrodes (the channel length that is the length that carriers pass between the source and drain). Instead, the number of carriers flowing between the source and drain electrodes is increased by increasing the channel width determined by the lengths of the opposing electrodes of the source electrode and the drain electrode.

  In terms of transistors using carbon nanotubes, this is to form a larger number of fine carbon nanotube wires for connecting the source and drain as channels. In other words, the carbon nanotube bundles, which are “clusters” of many carbon nanotube thin wires that connect the source and drain as a channel, that is, bridge between the source electrode and the drain electrode, are more closely packed (in high density), The shape of both source and drain electrodes is such that both opposing electrode lengths are long (wide channel width), bridging efficiency is good (less disconnection in the middle), and from the standpoint of transistor characteristics, controllability by the gate electrode is In order to ensure, it is important to form so as to contact the substrate.

  In addition to the use for bridging between the source electrode and the drain electrode as described above, for example, when the bundle of carbon nanotubes has a metallic property instead of a semiconducting property, It is also very important as an application for forming a carbon nanotube bundle.

  However, it can be said that the number of the crosslinked carbon nanotube thin wires was not sufficient in the transistor formation example in the conventional report, and no proposal of a specific method of forming a carbon nanotube bundle that meets these requirements was found. .

  Therefore, the problem to be solved by the present invention is that a carbon nanotube bundle can be formed on a substrate in a wide and dense manner and with few breaks in the middle so as to be in contact with the substrate over a certain region in the lateral direction. Another object of the present invention is to provide a method of forming a carbon nanotube bundle, and a transistor and wiring using the same.

The manufacturing method of the electronic device of the present invention includes:
Forming a catalytic metal pattern on the surface of the substrate, a catalyst pattern forming step;
A vertical growth step of growing a carbon nanotube bundle from the upper surface of the catalytic metal pattern in a direction perpendicular to the upper surface;
The carbon nanotube bundle is laid down in a predetermined direction on the surface of the substrate using a liquid having affinity for the carbon nanotube bundle, and a contact region is formed on the surface over a predetermined range. A contact region forming step;
It is characterized by having.

Also,
In the lying down and contact region forming step, a gas is used simultaneously with the liquid.

Also,
In the vertical growth step, the carbon nanotube bundle is oriented and grown in a vertical direction.

And the electronic device of this invention is
An electronic device having a gate electrode on one side of a substrate and source / drain electrodes on the other side,
A channel portion made of a bundle of carbon nanotubes is formed between the source / drain electrodes above the substrate.

Also,
The channel part is the carbon nanotube bundle grown on a catalytic metal pattern formed in a region to be one source or drain electrode on the substrate, and the carbon nanotube bundle is bent to form the other source or drain electrode. It is connected.

  According to the production method of the present invention, a carbon nanotube bundle having a high growth density and a large number of fine carbon nanotube wires in contact with the substrate surface can be easily obtained. By applying this to a transistor channel, a transistor having a large current amount according to the present invention can be manufactured, and by using this for a wiring, a wiring having a large current capacity can be manufactured.

  Embodiments of the present invention will be described below with reference to the accompanying drawings.

(First embodiment)
First, an example of manufacturing a back gate type transistor using a carbon nanotube bundle according to the present invention will be described. FIG. 1 is a schematic cross-sectional view of a process for explaining the manufacturing process of the present embodiment.

  In FIG. 1 (1), a catalyst 2 having a predetermined pattern is formed on a substrate 1, and a carbon nanotube bundle 3 is grown from the catalyst 2 in the vertical direction as shown in the figure.

  Next, as shown in FIG. 1 (2), the entire carbon nanotube bundle 3 is laid down in a predetermined direction to form a contact region 4 having a predetermined length L on the surface of the substrate 1 in contact therewith. .

  Then, as shown in FIG. 1 (3), one end of the carbon nanotube bundle 3 is used as the source electrode 6 and the other end of the carbon nanotube bundle 3 is obtained so that the channel portion 5 is obtained in the range of the contact region 4 having a predetermined length L. The back gate transistor 9 according to the present invention is completed by connecting the end to the drain electrode 7 and forming the back gate electrode 8 for controlling the current in the channel portion 5 on the back surface of the substrate.

In this embodiment, the substrate 1 is an SiO ₂ film (silicon oxide film) film formed by LP (Low Pressure) CVD (Chemical Vapor Deposition). As the catalyst 2, a laminated film of Al (aluminum) / Fe (iron) (film thickness: 5 nm / 0.4 nm or 10 nm / 0.4 nm) was used.

Next, a carbon nanotube bundle 3 was grown on the catalyst 2. As the growth method, a hot filament CVD method is used (for example, Non-Patent Document 2), and acetylene (H ₂ O ₂ ): argon (Ar): hydrogen (H ₂ ) is used as a growth introduction gas, 1 sccm: 9 sccm: 2000 sccm. Introduced in the ratio. The pressure at that time was 100 Pa and the growth temperature was 600 ° C.

  FIG. 2 shows an SEM image of an example of a carbon nanotube bundle obtained under such conditions with a growth time of approximately 80 minutes. In the figure, it can be seen that a carbon nanotube bundle extends upward from the catalyst on the bottom surface, and grows in a substantially vertical orientation while maintaining the shape of the catalyst pattern. In this example, the catalyst pattern was 4 μm × 100 μm, and the height of the carbon nanotube bundle was about 5 μm. As in this example, when carbon nanotubes are grown with high density on the catalyst, the carbon nanotubes grow vertically aligned so that they are close to each other due to the intermolecular force (van der Waals force) between the carbon nanotubes. As can be seen in this figure, the shape of the catalyst pattern was maintained, and it grew high in the vertical direction.Thus, as seen in this figure, the carbon nanotube bundle with a large number of carbon nanotubes per unit area was obtained. (For example, Non-Patent Document 3). On the other hand, when carbon nanotubes are grown on a catalyst in a low density state, individual carbon nanotube thin lines grow on the substrate, and in this case, a long carbon nanotube bundle is formed under the influence of the base substrate. Can't get.

  Next, the entire carbon nanotube bundle 3 grown with high density is laid down in a predetermined direction on the surface of the substrate 1 substantially vertically (carbon nanotubes are oriented in the vertical direction depending on the growth conditions) on the surface of the substrate 1. A contact region 4 having a predetermined length L is formed in contact with.

  FIG. 3 shows an example in which the entire carbon nanotube bundle was laid down. (1) to (4) in FIG. 3 are SEM images of a bundle of carbon nanotubes (and a catalyst, etc.) after carrying out a sideways experiment.

  In FIG. 3 (1), toluene, which is an organic solvent, is dropped on the vicinity of a side surface of a carbon nanotube bundle standing vertically, and then the toluene dropping liquid is carbonized with nitrogen gas from the opposite side in the direction in which it is desired to lie down. The carbon nanotube bundle that is blown in the direction of the nanotube bundle and erected vertically with toluene is laid sideways and brought into contact with the substrate surface with a certain length (region). Try to put it on. Thereafter, the toluene is naturally dried.

  As a result, the carbon nanotube bundle is uniformly laid down in one direction, and a region where the contact between the two is maintained by the intermolecular force with the substrate surface is secured. The result is the SEM image of FIG. 3 (1). In the figure, the carbon nanotube bundle once oriented and grown in a substantially uniform length in the vertical direction on the vertically arranged catalyst is uniform as it is. In the right direction of the catalyst, it was observed that the thin wires constituting the carbon nanotube bundles were laid down so as to be almost parallel, and were closely attached (contacted) over almost the entire area on the substrate. The

  3 (2) uses IPA (isopropyl alcohol), FIG. 3 (3) uses 2-butanone, and in both cases using nitrogen gas blow simultaneously with the above toluene, the carbon nanotube bundle is laid sideways. It is a SEM image of the result. In both figures, the catalyst pattern is on the right side of the figure, and from there, the carbon tube bundle lies sideways and the substrate is in contact.

  When a typical organic solvent such as ethanol, methanol, acetone, or DMF (dimethylformamide) was used as a liquid other than the above, similar results could be obtained.

  On the other hand, FIG. 3 (4) is an SEM image obtained as a result of an experiment in which a carbon nanotube bundle was laid down by using water (pure water) as a liquid in the same manner as the above-described acetone or the like. As a result, as seen in the figure, the bundle of carbon nanotubes could not be laid down and remained in a substantially vertical direction. Even when the dropped water is blown with nitrogen gas or the like, the carbon nanotube bundles are almost repelled. In other words, the liquid having water repellency with respect to the carbon nanotube bundle effectively laid down and could not be brought into contact with the substrate surface over a certain range.

  In other words, in order to effectively lie down the carbon nanotube bundle and bring it into contact with the substrate surface over a certain range in this way, the liquid having affinity for the carbon nanotube bundle or the carbon nanotube bundle has an affinity. It is important to use a liquid that contains water to the extent that it does not lose its properties. We confirmed that affinity liquids can be used in addition to organic solvents. In particular, organic solvents (including organic solvents that contain water to the extent that they do not lose affinity for carbon nanotube bundles) It is advantageous in that it can be naturally evaporated while maintaining the contact state with the substrate, and is also advantageous in that it is less harmful and easy to adapt to the device formation process.

  In the above description, affinity liquid dropping and gas (nitrogen gas is given as a representative example, but of course, it can be applied to carbon nanotubes if it is a non-reactive gas such as air). As an alternative to this, instead of using a liquid only method, that is, for a vertically grown carbon nanotube bundle, the affinity liquid is poured from a certain direction and the carbon nanotube bundle is laid down in the direction in which the liquid flows down. Method and dropping the affinity liquid while setting the substrate on the spin coater base and rotating (or adding the rotation after dropping the affinity liquid), the carbon nanotube bundle is laid sideways from the rotation center to the outer peripheral direction. We also performed methods such as Even with these methods, it was possible to lay down the carbon nanotube bundle and bring it into contact with the substrate surface over a certain range.

  On the other hand, an experiment was conducted to obtain the same effect by only blowing gas, but the upright carbon nanotube bundle was slightly inclined, but the expected effect was not obtained.

  Furthermore, in the SEM image of FIG. 4 (1), the carbon nanotube bundle grown on the catalyst does not have the orientation growth as described above, and most of the carbon nanotube thin wires are grown to the required length. It shows the case where it is not aligned in the vertical direction. The SEM image of FIG. 4 (2) shows the state when this was laid down by blowing an organic solvent and nitrogen gas (in this example, it was laid down from the right side to the left). Even in this case, although the length is not necessarily uniform, a certain length portion of the grown carbon nanotube bundle is secured, and in this portion, the thin wire constituting the carbon nanotube bundle is almost uniformly leftward of the catalyst. It can be seen that each is laid down so as to be approximately parallel and is stuck (contacted) on the substrate. Considering the use of such a constant length portion of the carbon nanotube bundle, it can be said that the carbon nanotube bundle grown on the catalyst does not necessarily have the orientation growth as described above.

  In this way, the entire carbon nanotube bundle 3 shown in FIG. 1 (2) is laid down in a predetermined direction, and a contact region 4 having a predetermined length L in contact with the substrate 1 is formed on the surface of the substrate 1. Could be formed. Using this, a back-gate transistor is manufactured.

First, for example, after a SiO ₂ film is formed on the entire surface of the substrate 1 by a CVD method, a predetermined length within the region L of the carbon nanotube bundle in contact with the substrate surface using a known photolithography method and etching method is used. Opening portions corresponding to the source electrode region and the drain electrode region are formed so that electrodes that are in contact with both ends of the carbon nanotube bundle within the region L can be formed. . The carbon nanotube bundle portion in each of the source electrode region and the drain electrode region is imparted with p-type or n-type conductivity. The former is oxidized by, for example, heat treatment in an oxygen atmosphere, and the latter is performed by, for example, contact reaction with potassium. .

  Next, for example, after performing a whole surface sputtering deposition process of a Ti film, a source electrode and a drain electrode are formed by lift-off. Similarly, a back gate electrode is formed on the back surface of the substrate by sputtering and lift-off of a Ti film to complete the back gate transistor according to the present invention.

  FIG. 5 shows a surface microscopic image on the source / drain electrode side of the back-gate transistor thus fabricated. A bundle of carbon nanotubes that is sandwiched between the source electrode 6 and the drain electrode 7 and forms the channel portion 5 and that is in contact with the substrate can be observed.

For example, when the gate width of the transistor is 100 μm, in the conventional example, the drain current _ID is reported to be several tens of nA to several hundred μA in the conventional example. It is clear that the density of the carbon nanotube bundle forming the channel can be overwhelmingly increased. For example, a current of 100 times or more can be expected.

  If the area of the catalyst is further increased and a transistor corresponding to the area is manufactured, the number of fine wires in the carbon nanotube bundle forming the channel can be increased as a whole, and the current of the transistor can be increased. it can.

(Second embodiment)
Here, an embodiment of manufacturing a top gate transistor using a carbon nanotube bundle according to the present invention will be described. FIG. 6 is a schematic cross-sectional view of a process for explaining the manufacturing process of the present embodiment.

  6 (1), a catalyst 2 having a predetermined pattern is formed on a substrate 1, and a carbon nanotube bundle 3 is grown from the catalyst 2 in the vertical direction as shown in the figure.

  Next, as shown in FIG. 6 (2), the entire carbon nanotube bundle 3 is laid down in a predetermined direction to form a contact region 4 having a predetermined length L on the surface of the substrate 1 in contact therewith. .

  Next, as shown in FIG. 6 (3), one end of the carbon nanotube bundle 3 is used as the source electrode 6 and the other is provided so that the channel portion 5 is obtained in the range of the contact region 4 having a predetermined length L. Is connected to the drain electrode 7.

  Then, as shown in FIG. 6 (4), an insulating film 10 (corresponding to a gate oxide film) is formed so as to embed the channel portion 5, and a top gate electrode 11 is formed on the insulating film 10 to achieve the present invention. A top gate type transistor 12 is obtained.

The specific processes described in the first embodiment can be applied to the steps of FIGS. 6 (1), (2), and (3). Step of FIG. 6 (4), for example, after forming the SiO ₂ film by CVD on the entire surface of the substrate in FIG. 6 (3), only the oxide portions between the electrodes by removing the SiO ₂ film, such as on the electrode Leave the membrane 10. Thereafter, a top gate gate electrode is formed by sputtering the Ti film thereon and using a photolithography method.

Of course, the process after FIG. 6 (3) is changed, and after the SiO ₂ film / Ti film is formed on the entire surface of the substrate in FIG. 6 (2) by CVD, the source electrode region and the drain electrode are formed by the patterning process. The region is opened, and the insulating film 10 (gate oxide film) and the Ti gate electrode pattern are formed first. Thereafter, it is possible to take a process of embedding a Ti film in the openings for both electrodes to form a source electrode and a drain electrode.

(Third embodiment)
Here, an embodiment of fabricating a buried gate type transistor using a carbon nanotube bundle according to the present invention will be described. FIG. 7 is a schematic cross-sectional view of a process for explaining the manufacturing process of the present embodiment.

  In FIG. 7A, an embedded gate electrode 13 having a predetermined pattern shape is formed on a substrate 1, and an insulating film 14 is formed on the entire surface thereof. A catalyst 2 having a predetermined pattern is formed on the insulating film 14, and then a carbon nanotube bundle 3 is grown vertically thereon.

  Next, as shown in FIG. 7B, the carbon nanotube bundle 3 is laid down to form a contact region having a predetermined length L.

  Then, as shown in FIG. 7 (3), one end of the carbon nanotube bundle 3 is used as the source electrode 6 and the other end of the carbon nanotube bundle 3 is obtained so that the channel portion 5 is obtained in the range of the contact region 4 having a predetermined length L. The end is connected to the drain electrode 7. At this time, the buried gate electrode 13 is formed between the source electrode 6 and the drain electrode 7 so as to be directly under the channel portion 5. Thus, the buried gate type transistor 15 according to the present invention is formed.

Specifically, a Ti film is first formed on a substrate by sputtering, a buried gate electrode of Ti film is formed by patterning, and then a SiO ₂ film (insulating film) is formed on the entire surface by CVD. After that, similarly to the first embodiment, the embedded process of the present invention is obtained through the carbon nanotube bundle growth process, the laying down process, and the electrode forming process.

(Fourth embodiment)
This embodiment describes an embodiment of wiring using a carbon nanotube bundle according to the present invention.

  FIG. 8 is a schematic cross-sectional view of a process for explaining the manufacturing process of the present embodiment.

  In FIG. 8A, a catalyst 2 having a predetermined pattern is formed on a substrate 1, and a carbon nanotube bundle 3 is grown from the catalyst 2 in the vertical direction as shown in the figure.

  Next, as shown in FIG. 8 (2), the entire carbon nanotube bundle 3 is laid down in a predetermined direction to form a contact region 4 having a predetermined length L on the surface of the substrate 1 in contact therewith. .

  Next, as shown in FIG. 8 (3), electrodes 17 are formed on both ends of the carbon nanotube bundle 3 so that the wiring portion 16 is obtained in the range of the contact region 4 having a predetermined length L.

  Specifically, with respect to the electrode formation in FIG. 8 (3), for example, after applying a resist to the entire surface, an electrode formation portion is opened using photolithography, and an electrode material such as gold (Au), A lift-off method using sputtering, vapor deposition, or the like or a damascene method using plating can be applied to copper (Cu), tungsten (W), or the like.

  Wiring composed of carbon nanotube bundles that are laid down to connect the electrodes produced in this way is easier to produce than the carbon nanotube bundle wiring (for example, Patent Document 1) formed by the lateral growth reported previously. Thus, it is possible to obtain a carbon nanotube bundle wiring that has high-density carbon nanotube thin wires and has a wide wiring width, so that a large current can be taken.

  Of course, other wiring structures according to the present invention include, for example, a groove formed in a linear direction in the insulating film such that the wiring 16 in FIG. 8 (3) is limited by an insulating film or the like in the depth direction. It is also possible to fabricate carbon nanotube bundles with a limited width (as in the case of providing wiring inside). Furthermore, various catalyst patterns are formed on the substrate, and at the same time or in the order of forming each wiring, various rectangular shaped carbon nanotube bundles are formed in the vertical direction, and laid in various directions on the surface. It is also possible to form connected wirings having various directions, lengths, and sizes in a plane by combining electrodes connected to these.

Regarding the above embodiments, in addition to the above embodiments, the substrate is, for example, a semiconductor substrate such as Si (silicon), an insulating film such as a SiN film (silicon nitride film), a metal film such as a Ta (tantalum) film, glass, An insulating substrate such as ceramic can also be applied. As the catalyst, for example, an Fe (iron) film, a Co (cobalt) film, a Ni (nickel) film, an alloy film thereof, or a laminated film thereof can be applied. Further, the growth method and growth conditions of the carbon nanotube bundle 3 are not limited to the above-mentioned conditions. For example, the growth method such as plasma enhanced CVD can be appropriately selected for both the method and conditions, and the electrode Needless to say, the insulating film forming method and the forming material are not limited to the above-described embodiments.
Y. Awano et al, Phys. Stat. Sol. 203 (2006) 3611 S. Maruyama et al, Chem. Phys. Lett. 403 (2005) 320 The following supplementary notes are disclosed regarding the embodiment including the above examples.

(Appendix 1)
Forming a catalytic metal pattern on the surface of the substrate, a catalyst pattern forming step;
A vertical growth step of growing a carbon nanotube bundle from the upper surface of the catalytic metal pattern in a direction perpendicular to the upper surface;
The carbon nanotube bundle is laid down in a predetermined direction on the surface of the substrate using a liquid having affinity for the carbon nanotube bundle, and a contact region is formed on the surface over a predetermined range. A contact region forming step;
A method for manufacturing an electronic device, comprising:
(Appendix 2)
The method of manufacturing an electronic device according to appendix 1, wherein a gas is used simultaneously with the liquid in the laying down and contact region forming step.
(Appendix 3)
2. The method of manufacturing an electronic device according to claim 1, wherein the liquid is an organic solvent or an organic solvent containing water to such an extent that the affinity with the carbon nanotube bundle is not lost.
(Appendix 4)
The method of manufacturing an electronic device according to claim 2, wherein the gas is nitrogen gas.
(Appendix 5)
The electronic device manufacturing method according to any one of appendices 1 to 4, wherein in the vertical growth step, the carbon nanotube bundle is oriented and grown in a vertical direction.
(Appendix 6)
An electronic device having a gate electrode on one side of a substrate and source / drain electrodes on the other side,
An electronic device, wherein a channel portion made of a bundle of carbon nanotubes is formed between the source / drain electrodes above the substrate.
(Appendix 7)
The channel part is the carbon nanotube bundle grown on a catalytic metal pattern formed in a region to be one source or drain electrode on the substrate, and the carbon nanotube bundle is bent to form the other source or drain electrode. The electronic apparatus according to appendix 6, wherein the electronic apparatus is connected.

The figure explaining the process of the 1st Example The figure which shows the SEM image of the carbon nanotube bundle grown on the catalyst The figure which shows the SEM image of the example of a situation after performing sideways and a contact region formation process The figure which shows the SEM image of the other example regarding the condition after performing the growth on a catalyst of carbon nanotube bundles, lying down, and a contact region formation process The figure which shows the surface microscope image of the transistor which used the carbon nanotube bundle | flux of this invention for the channel The figure explaining the process of the 2nd Example The figure explaining the process of the 3rd Example The figure explaining the process of a 4th Example The figure explaining the process of the transistor formation example using the conventional carbon nanotube

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 Substrate 2,102 Catalyst 3 Carbon nanotube bundle 4 Contact region 5 Channel part 6, 104 Source electrode 7, 105 Drain electrode 8 Back gate electrode 9 Back gate type transistor 10, 14 Insulating film 11 Top gate electrode 12 Top gate type Transistor 13 Embedded gate electrode 15 Embedded gate type transistor 16 Wiring 17 Electrode 103 Carbon nanotube 106 Gate electrode

Claims (5)

Forming a catalytic metal pattern on the surface of the substrate, a catalyst pattern forming step;
A vertical growth step of growing a carbon nanotube bundle from the upper surface of the catalytic metal pattern in a direction perpendicular to the upper surface;
The carbon nanotube bundle is laid down in a predetermined direction on the surface of the substrate using a liquid having affinity for the carbon nanotube bundle, and a contact region is formed on the surface over a predetermined range. A contact region forming step;
A method for manufacturing an electronic device, comprising:   The method for manufacturing an electronic device according to claim 1, wherein a gas is used simultaneously with the liquid in the laying down and contact region forming step.   3. The method of manufacturing an electronic device according to claim 1, wherein in the vertical growth step, the carbon nanotube bundle is oriented and grown in a vertical direction. An electronic device having a gate electrode on one side of a substrate and source / drain electrodes on the other side,
An electronic device, wherein a channel portion made of a bundle of carbon nanotubes is formed between the source / drain electrodes above the substrate.   The channel part is the carbon nanotube bundle grown on a catalytic metal pattern formed in a region to be one source or drain electrode on the substrate, and the carbon nanotube bundle is bent to form the other source or drain electrode. The electronic device according to claim 4, wherein the electronic device is connected.

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