JP2009028805A - Polishing device - Google Patents

Polishing device Download PDF

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JP2009028805A
JP2009028805A JP2007192184A JP2007192184A JP2009028805A JP 2009028805 A JP2009028805 A JP 2009028805A JP 2007192184 A JP2007192184 A JP 2007192184A JP 2007192184 A JP2007192184 A JP 2007192184A JP 2009028805 A JP2009028805 A JP 2009028805A
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polishing
torque
polished
wafer
relative
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JP5126657B2 (en
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Masaru Saeki
優 佐伯
Kiyoshi Fukushima
清 福島
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Nikon Corp
株式会社ニコン
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing device capable of finding abnormality of the device earlier. <P>SOLUTION: The polishing device comprises a rotary driving device for rotating and driving a polishing member including a servomotor 31, a motor current sensor substrate 36 for detecting the amount of a current supplied to the servomotor 31, a signal processing substrate 37 for calculating the amount of torque of the servomotor 31 based on the amount of the current detected in the motor current sensor substrate 36, and a torque monitor 38 for determining whether or not an abnormality exists in the device based on change in the torque of the servomotor 31 calculated by the signal processing substrate 37. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体ウェハ等の被研磨物を研磨する研磨装置に関する。   The present invention relates to a polishing apparatus for polishing an object to be polished such as a semiconductor wafer.
従来、半導体ウェハ等の被研磨物の表面を平坦化する研磨装置として、ウェハをその被研磨面が露出する状態で保持するウェハ保持装置と、このウェハ保持装置に保持されたウェハの被研磨面と対向する研磨パッドが貼り付けられた研磨部材を保持する研磨ヘッドとを備え、これら双方を回転させた状態で研磨パッドをウェハの被研磨面に押し付け、且つ研磨部材を両者の接触面内方向に揺動させてウェハを研磨する構成のものが知られている(例えば、特許文献1を参照)。また、このような機械的研磨に加え、研磨パッドとウェハとの接触面に研磨剤(スラリー)を供給して研磨剤の化学的作用により上記研磨を促進させる化学的機械的研磨(Chemical Mechanical Polishing;CMP)を行うCMP装置も知られている。   Conventionally, as a polishing apparatus for flattening the surface of an object to be polished such as a semiconductor wafer, a wafer holding apparatus that holds the wafer in a state where the polished surface is exposed, and a surface to be polished of the wafer held by the wafer holding apparatus And a polishing head for holding a polishing member to which a polishing pad opposite to the substrate is attached. With both of them rotated, the polishing pad is pressed against the surface to be polished of the wafer, and the polishing member is in the contact surface inward direction. There is known a configuration in which a wafer is polished by swinging it (see, for example, Patent Document 1). Further, in addition to such mechanical polishing, chemical mechanical polishing (Chemical Mechanical Polishing) that supplies the polishing agent (slurry) to the contact surface between the polishing pad and the wafer and promotes the polishing by the chemical action of the polishing agent. CMP apparatus for performing CMP) is also known.
このような構成の研磨装置を用いたウェハの研磨加工は、研磨ヘッドとともに研磨パッドを回転させながらウェハ保持装置に回転保持されたウェハの被研磨面に当接させて行われ、このとき、研磨パッドは回転しながらウェハに対して水平方向へ往復運動をすることで、ウェハの全表面が均一に研磨加工される。
特許第2968784号公報
The polishing process of the wafer using the polishing apparatus having such a configuration is performed by bringing the polishing pad into contact with the surface to be polished held by the wafer holding apparatus while rotating the polishing pad together with the polishing head. The pad reciprocates horizontally with respect to the wafer while rotating, so that the entire surface of the wafer is uniformly polished.
Japanese Patent No. 2968784
ところで、上述のような従来の研磨装置においては、装置の突発的な故障を防止するため、装置の異常をできるだけ早く発見するための方策が求められていた。   By the way, in the conventional polishing apparatus as described above, in order to prevent a sudden failure of the apparatus, there has been a demand for a measure for detecting an abnormality of the apparatus as soon as possible.
本発明は、このような問題に鑑みてなされたものであり、装置の異常をより早く発見することができる研磨装置を提供することを目的とする。   The present invention has been made in view of such a problem, and an object of the present invention is to provide a polishing apparatus capable of finding an abnormality of the apparatus earlier.
このような目的達成のため、本発明に係る研磨装置は、被研磨物を保持する保持装置と、前記保持装置に保持された前記被研磨物を研磨可能な研磨部材と、前記被研磨物に対して前記研磨部材を相対移動させる駆動装置とを備え、前記研磨部材を前記被研磨物に当接させながら前記駆動装置により相対移動させて前記被研磨物の研磨を行うように構成された研磨装置において、前記駆動装置は、前記研磨部材を前記相対移動させるためのトルクを生ずる電気モータを有して構成されており、前記トルクを生ずるために前記電気モータに供給される電流の大きさを検出する電流検出器と、前記電流検出器に検出された前記電流の大きさに基づいて、前記トルクの大きさを算出するトルク算出部と、前記トルク算出部で算出される前記トルクの変化に基づいて、装置の異常の有無を判定する判定部とを備えている。   To achieve such an object, a polishing apparatus according to the present invention includes a holding device that holds an object to be polished, a polishing member that can polish the object to be polished held by the holding device, and an object to be polished. A polishing device configured to move the polishing member relative to the object to be polished and move the polishing member relative to the object to be polished while the polishing member is in contact with the object to be polished. In the apparatus, the driving device is configured to include an electric motor that generates torque for moving the polishing member relative to the polishing member, and the magnitude of the current supplied to the electric motor to generate the torque is determined. A current detector to be detected; a torque calculation unit for calculating the magnitude of the torque based on the magnitude of the current detected by the current detector; and a change in the torque calculated by the torque calculation unit. Based on, and a determination unit that determines presence or absence of abnormality of the apparatus.
なお、上述の発明では、前記トルク算出部で算出された前記トルクの大きさを表示する表示部を備えることが好ましい。   In the above-described invention, it is preferable to include a display unit that displays the magnitude of the torque calculated by the torque calculation unit.
また、上述の発明では、前記被研磨物に対する前記研磨部材の相対位置を測定する位置測定器を備え、前記表示部は、前記位置測定器により測定された前記研磨部材の前記相対位置とともに、前記研磨部材が前記相対位置に位置するときの前記トルクの大きさを表示することが好ましい。   Further, in the above-described invention, a position measuring device that measures a relative position of the polishing member with respect to the object to be polished is provided, and the display unit includes the relative position of the polishing member measured by the position measuring device. It is preferable to display the magnitude of the torque when the polishing member is located at the relative position.
また、上述の発明では、前記駆動装置において、前記電気モータにより前記研磨部材を回転駆動するように構成されることが好ましい。   In the above-described invention, it is preferable that the driving device is configured to rotationally drive the polishing member by the electric motor.
また、上述の発明では、前記電気モータがサーボモータであることが好ましい。   Moreover, in the above-mentioned invention, it is preferable that the electric motor is a servo motor.
本発明によれば、装置の異常をより早く発見することができる。   According to the present invention, it is possible to detect an abnormality of a device earlier.
以下、図面を参照して本発明の好ましい実施形態について説明する。本発明に係る研磨装置の代表例であるCMP装置(化学的機械的研磨装置)の一部を図1に示している。このCMP装置Cは、その研磨工程に従って、カセットインデックス部、ウェハ洗浄部、および研磨部から構成され、また研磨部は、4分割されたインデックステーブルのそれぞれの区画に設けられる3つの研磨室と1つの搬送室とから構成されるが、本実施形態では、そのうちの1つの研磨室について説明を行う。   Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. A part of a CMP apparatus (chemical mechanical polishing apparatus) which is a typical example of the polishing apparatus according to the present invention is shown in FIG. The CMP apparatus C includes a cassette index unit, a wafer cleaning unit, and a polishing unit according to the polishing process. The polishing unit includes three polishing chambers and one polishing chamber provided in each section of the index table divided into four. In this embodiment, only one polishing chamber will be described.
搬送室から半導体ウェハWが搬入される研磨室1には、4分割されてステッピングモータ等の作動により90度毎に回動送りされるインデックステーブル2と、研磨アーム3と、ドレッシング装置4と、パッド交換台5と、表面形状測定装置6とが配設されている。インデックステーブル2のそれぞれの区画には、被研磨物であるウェハWを裏面から吸着保持するウェハ保持装置10が配設されており、ウェハWを吸着保持して研磨室1に移動させる。このウェハ保持装置10は、インデックステーブル2に水平面内で回転自在に支持されており、インデックステーブル2の内部に配設された図示しない電気モータやエアモータ等の駆動手段により高速回転される。   In the polishing chamber 1 into which the semiconductor wafer W is transferred from the transfer chamber, an index table 2, which is divided into four parts and rotated and fed every 90 degrees by the operation of a stepping motor, a polishing arm 3, a dressing device 4, A pad exchanging table 5 and a surface shape measuring device 6 are arranged. Each section of the index table 2 is provided with a wafer holding device 10 that sucks and holds a wafer W as an object to be polished from the back surface, and moves the wafer W to the polishing chamber 1 by suction. The wafer holding device 10 is supported by the index table 2 so as to be rotatable in a horizontal plane, and is rotated at a high speed by driving means such as an electric motor or an air motor (not shown) disposed inside the index table 2.
研磨アーム3は、インデックステーブル2に対して水平方向に旋回可能で、且つ、鉛直方向に上下動可能に構成されている。この研磨アーム3の揺動端部には研磨ヘッド20が回転自在に取り付けられており、この研磨ヘッド20は、図2に示すように、下面側に研磨パッド22が貼り付けられた研磨部材21を着脱可能に保持するようになっている。そして、研磨パッド22の表面(下面)には、ウェハWの表面(被研磨面)に当接して研磨を行う研磨面23が形成される。   The polishing arm 3 is configured to be turnable in the horizontal direction with respect to the index table 2 and to be vertically movable in the vertical direction. A polishing head 20 is rotatably attached to the oscillating end of the polishing arm 3. The polishing head 20 has a polishing member 21 having a polishing pad 22 attached to the lower surface side as shown in FIG. Is detachably held. A polishing surface 23 is formed on the surface (lower surface) of the polishing pad 22 to be in contact with the surface (surface to be polished) of the wafer W for polishing.
このような研磨ヘッド20は、研磨アーム3内に配設された回転駆動装置30により回転駆動されて、水平面内で高速回転自在に構成される。また、研磨ヘッド20は、上述のウェハ保持装置10の回転方向と逆方向に回転駆動され、研磨パッド22の研磨面23をウェハWに当接させながら高速に相対回転させることにより、ウェハWの表面(被研磨面)が平坦に研磨される。さらに、研磨ヘッド20は、図1に示すように、研磨アーム3の回動により、ウェハ保持装置10、ドレッシング装置4、パッド交換台5、および表面形状測定装置6の上方にそれぞれ移動することができるようになっている。   Such a polishing head 20 is rotationally driven by a rotation driving device 30 disposed in the polishing arm 3 and is configured to be rotatable at high speed in a horizontal plane. Further, the polishing head 20 is rotationally driven in a direction opposite to the rotation direction of the wafer holding device 10 described above, and is rotated relative to the wafer W at high speed while the polishing surface 23 of the polishing pad 22 is in contact with the wafer W. The surface (surface to be polished) is polished flat. Further, as shown in FIG. 1, the polishing head 20 can move above the wafer holding device 10, the dressing device 4, the pad changer 5, and the surface shape measuring device 6 by the rotation of the polishing arm 3. It can be done.
なお、図1で示されるドレッシング装置4は、ウェハWを研磨加工することによって研磨パッド22に生じた目詰まりや目の不揃いを修正(ドレッシング、目立て)する装置であり、詳細図示を省略するが、表面にダイヤモンド砥粒等が固着されて回転自在なディスクと、ドレッシングされた研磨パッドの表面に純水を噴射して研磨パッドを純水洗浄する洗浄ノズルを有している。また、パッド交換台5は使用後の研磨パッド22を新品のものに交換するための装置であり、表面形状測定装置6は研磨パッド22の表面形状を測定するための装置である。   The dressing device 4 shown in FIG. 1 is a device that corrects clogging and unevenness of the polishing pad 22 caused by polishing the wafer W (dressing, sharpening), and detailed illustration is omitted. And a disk having diamond abrasive grains or the like fixed on its surface and a rotatable disk, and a cleaning nozzle for cleaning the polishing pad with pure water by spraying pure water onto the surface of the dressed polishing pad. The pad changer 5 is a device for replacing the used polishing pad 22 with a new one, and the surface shape measuring device 6 is a device for measuring the surface shape of the polishing pad 22.
回転駆動装置30は、図3に示すように、研磨ヘッド20(および研磨部材21)を回転駆動させるためのトルクを生ずるサーボモータ31を有して構成される。サーボモータ31は、サーボアンプ34と電気的に接続されており、サーボアンプ34からモータ動力ケーブル32を介して供給される駆動電流により作動するようになっている。また、サーボモータ31には、モータ軸の回転変位を検出するモータエンコーダ(図示せず)が内蔵されており、モータエンコーダで検出されたモータ軸の回転変位信号がモータエンコーダケーブル33を介してサーボアンプ34に入力されるようになっている。   As shown in FIG. 3, the rotation driving device 30 includes a servo motor 31 that generates torque for rotating the polishing head 20 (and the polishing member 21). The servo motor 31 is electrically connected to the servo amplifier 34 and is operated by a drive current supplied from the servo amplifier 34 via the motor power cable 32. The servo motor 31 has a built-in motor encoder (not shown) for detecting the rotational displacement of the motor shaft, and the rotational displacement signal of the motor shaft detected by the motor encoder is servoed via the motor encoder cable 33. The signal is input to the amplifier 34.
サーボアンプ34は、上位コントローラ35と電気的に接続されており、上位コントローラ35から入力される回転制御信号およびモータエンコーダから入力されるモータ軸の回転変位信号に応じて算出したサーボモータ31の駆動電流を、モータ動力ケーブル32を介してサーボモータ31に出力供給する。モータ動力ケーブル32にはモータ電流センサー基板36が配設されており、モータ電流センサー基板36は、モータ動力ケーブル32を流れるサーボモータ31の駆動電流の大きさを検出して信号処理基板37へ出力する。   The servo amplifier 34 is electrically connected to the host controller 35 and drives the servo motor 31 calculated according to the rotation control signal input from the host controller 35 and the rotation displacement signal of the motor shaft input from the motor encoder. The current is output and supplied to the servo motor 31 via the motor power cable 32. A motor current sensor board 36 is disposed on the motor power cable 32, and the motor current sensor board 36 detects the magnitude of the drive current of the servo motor 31 flowing through the motor power cable 32 and outputs it to the signal processing board 37. To do.
信号処理基板37は、モータ電流センサー基板36およびトルクモニター38と電気的に接続されており、モータ動力ケーブル32から入力された駆動電流の大きさに基づいて、サーボモータ31で生ずるトルクの大きさを算出しトルクモニター38へ出力するようになっている。なお、トルクの大きさは、サーボモータ31のトルクと駆動電流との相関関係を利用して算出される。   The signal processing board 37 is electrically connected to the motor current sensor board 36 and the torque monitor 38, and the magnitude of the torque generated in the servo motor 31 based on the magnitude of the driving current input from the motor power cable 32. Is calculated and output to the torque monitor 38. The magnitude of the torque is calculated using the correlation between the torque of the servo motor 31 and the drive current.
トルクモニター38には、研磨アーム3基端部の揺動軸(図示せず)に配設されたエンコーダ39(図1も参照)が電気的に接続されており、エンコーダ39は、研磨アーム3の揺動変位、すなわち、ウェハWに対する研磨部材21の水平方向相対位置を測定してトルクモニター38へ出力する。そして、トルクモニター38は、信号処理基板37から入力されたサーボモータ31のトルクの大きさおよび、エンコーダ39から入力された研磨部材21の相対位置に基づいて、研磨部材21の相対位置とともに、研磨部材21が当該相対位置に位置するときのサーボモータ31のトルクの大きさを表示するようになっている。   The torque monitor 38 is electrically connected to an encoder 39 (see also FIG. 1) disposed on a rocking shaft (not shown) at the base end of the polishing arm 3, and the encoder 39 is connected to the polishing arm 3. , That is, the horizontal relative position of the polishing member 21 with respect to the wafer W is measured and output to the torque monitor 38. Then, the torque monitor 38 performs polishing along with the relative position of the polishing member 21 based on the magnitude of the torque of the servo motor 31 input from the signal processing board 37 and the relative position of the polishing member 21 input from the encoder 39. The magnitude of torque of the servo motor 31 when the member 21 is located at the relative position is displayed.
このような構成のCMP装置Cを用いたウェハWの研磨加工は、研磨ヘッド20とともに研磨パッド22(研磨部材21)を回転させながら、研磨パッド22の研磨面23をウェハ保持装置10に回転保持されたウェハWの表面(被研磨面)に当接させて行われ、このとき、研磨パッド22は回転しながらウェハWに対して水平方向へ往復運動(揺動)することで、ウェハWの全表面が平坦に研磨加工される。なおこのとき、研磨パッド22とウェハWとの間に研磨剤(スラリー)が供給される。   In the polishing process of the wafer W using the CMP apparatus C having such a configuration, the polishing surface 22 of the polishing pad 22 is rotated and held on the wafer holding apparatus 10 while rotating the polishing pad 22 (polishing member 21) together with the polishing head 20. In this case, the polishing pad 22 reciprocates (oscillates) in the horizontal direction with respect to the wafer W while rotating. The entire surface is polished flat. At this time, an abrasive (slurry) is supplied between the polishing pad 22 and the wafer W.
ウェハWの研磨が所定回数終了すると、研磨アーム3の作動により、研磨ヘッド20がウェハ保持装置10の上方からドレッシング装置4の上方に移動し、そこで研磨パッド22のドレッシングが行われる。ドレッシング終了後、研磨アーム3の作動により、研磨ヘッド20がドレッシング装置4の上方から表面形状測定装置6の上方に移動し、そこで研磨パッド22の表面形状(溝深さやパッド厚さ等)が測定される。   When the polishing of the wafer W is completed a predetermined number of times, the polishing arm 20 is moved from above the wafer holding device 10 to above the dressing device 4 by the operation of the polishing arm 3, where the polishing pad 22 is dressed. After the dressing is completed, the polishing head 20 is moved from above the dressing device 4 to above the surface shape measuring device 6 by the operation of the polishing arm 3, and the surface shape (groove depth, pad thickness, etc.) of the polishing pad 22 is measured there. Is done.
パッド厚さや溝深さが規定の値未満となっていた場合には、研磨ヘッド20をパッド交換台5の上方に移動させて研磨パッド22(研磨部材21)の交換を行い、さらに研磨ヘッド20をウェハ保持装置10の上方に移動させて新しくウェハWの研磨を行う。一方、パッド厚さや溝深さが規定の値以上である場合には、研磨ヘッド20をウェハ保持装置10の上方に戻して新しいウェハWの研磨を開始する。   If the pad thickness or groove depth is less than the prescribed value, the polishing head 20 is moved above the pad changer 5 to replace the polishing pad 22 (polishing member 21), and further the polishing head 20 Is moved above the wafer holding apparatus 10 to newly polish the wafer W. On the other hand, if the pad thickness or groove depth is equal to or greater than the prescribed value, the polishing head 20 is returned to above the wafer holding device 10 and polishing of a new wafer W is started.
このようなウェハWの研磨加工を行うとき、モータ電流センサー基板36は、モータ動力ケーブル32を流れるサーボモータ31の駆動電流の大きさを検出して信号処理基板37へ出力する。信号処理基板37は、モータ動力ケーブル32から入力された駆動電流の大きさに基づいて、サーボモータ31で生ずるトルクの大きさを算出しトルクモニター38へ出力する。またこのとき、エンコーダ39は、研磨アーム3の揺動変位、すなわち、ウェハWに対する研磨部材21の水平方向相対位置を測定してトルクモニター38へ出力する。   When performing such polishing processing of the wafer W, the motor current sensor substrate 36 detects the magnitude of the drive current of the servo motor 31 flowing through the motor power cable 32 and outputs it to the signal processing substrate 37. The signal processing board 37 calculates the magnitude of the torque generated in the servo motor 31 based on the magnitude of the drive current input from the motor power cable 32 and outputs it to the torque monitor 38. At this time, the encoder 39 measures the oscillation displacement of the polishing arm 3, that is, the horizontal relative position of the polishing member 21 with respect to the wafer W, and outputs it to the torque monitor 38.
トルクモニター38は、信号処理基板37から入力されたサーボモータ31のトルクの大きさおよび、エンコーダ39から入力された研磨部材21の相対位置に基づいて、研磨部材21の相対位置とともに、研磨部材21が当該相対位置に位置するときのサーボモータ31のトルクの大きさを表示する。これにより、サーボモータ31のトルクの大きさおよび、ウェハWに対する研磨部材21の相対位置を常時監視することができる。そして、トルクモニター38は、信号処理基板37から入力されるトルクの変化に基づいて、装置の異常の有無を判定するようになっており、このようにすれば、装置の異常をより早く(故障する前に)発見することが可能になる。   Based on the magnitude of the torque of the servo motor 31 input from the signal processing board 37 and the relative position of the polishing member 21 input from the encoder 39, the torque monitor 38 has the polishing member 21 together with the relative position of the polishing member 21. Indicates the magnitude of the torque of the servo motor 31 when is positioned at the relative position. Thereby, the magnitude of the torque of the servo motor 31 and the relative position of the polishing member 21 with respect to the wafer W can be constantly monitored. The torque monitor 38 determines whether or not there is an abnormality in the apparatus based on a change in torque input from the signal processing board 37. By doing so, the abnormality in the apparatus can be detected earlier (failure). Before you can discover).
ところで、サーボモータ31のトルクの大きさは、直接監視することができないため、通常、サーボアンプ34から出力されるアナログモニタの電圧を監視することが考えられる。しかしながら、サーボアンプ34からのアナログモニタ出力では、フルスケールで8Vの電圧を256階調で正規化しているため、分解能が低い。これに対し、サーボモータ31に流れる駆動電流は、サーボモータ31で生ずるトルクと相関があると考えられるので、サーボモータ31に流れる駆動電流を測定して、サーボモータ31のトルクの大きさを監視することにより、サーボモータ31の駆動電流はトルクの大きさに応じて加減するため、分解能が高くなってより小さなトルク変化量を監視することが可能になる。   By the way, since the magnitude of the torque of the servo motor 31 cannot be directly monitored, it is usually considered to monitor the voltage of the analog monitor output from the servo amplifier 34. However, the analog monitor output from the servo amplifier 34 has a low resolution because the voltage of 8V in full scale is normalized with 256 gradations. On the other hand, since the drive current flowing through the servo motor 31 is considered to have a correlation with the torque generated by the servo motor 31, the drive current flowing through the servo motor 31 is measured and the magnitude of the torque of the servo motor 31 is monitored. As a result, the drive current of the servo motor 31 is increased or decreased according to the magnitude of the torque, so that the resolution is increased and a smaller amount of torque change can be monitored.
図4に、サーボモータ31で生ずる研磨トルクの推移の一例を示す。なお、図4における領域Aは、研磨を行っているときの研磨トルクの推移であり、領域A以外の(研磨トルクが低い)領域は、ウェハWの交換等により研磨を行っていないときの研磨トルクの推移である。研磨パッド22よりも大きなウェハWを研磨する場合、研磨パッド22は揺動研磨によりウェハWとの接触面積が変化する。接触面積が変化すると、図4における領域Aで示されるように、サーボモータ31のトルクの大きさも接触面積に比例して変化する。このように、装置の異常を発見するためには、揺動研磨によるトルク変動と装置異常によるトルク変動とを見分ける必要がある。   FIG. 4 shows an example of the transition of the polishing torque generated by the servo motor 31. Region A in FIG. 4 is a transition of polishing torque when polishing is performed, and regions other than region A (polishing torque is low) are polished when the wafer W is not polished due to replacement of the wafer W or the like. It is the transition of torque. When polishing a wafer W larger than the polishing pad 22, the contact area of the polishing pad 22 with the wafer W changes by rocking polishing. When the contact area changes, the magnitude of the torque of the servo motor 31 also changes in proportion to the contact area, as indicated by region A in FIG. As described above, in order to find an abnormality in the apparatus, it is necessary to distinguish between a torque fluctuation due to rocking polishing and a torque fluctuation due to the apparatus abnormality.
そこで、前述したように、研磨パッド22が貼り付けられた研磨部材21の相対位置を常時監視することで、トルクモニター38は、例えば、正常時における研磨部材21の相対位置とサーボモータ31のトルクの大きさとの関係をデータテーブル(図示せず)に記憶しておき、研磨部材21の相対移動に応じたサーボモータ31のトルク変動を当該データテーブルと比較することにより、装置の異常の有無を判定することが可能になるとともに、当該異常の発生箇所(もしくは内容)を特定することが可能になる。なお、サーボモータを制御する上位コントローラ35は、研磨部材21の移動距離や回転速度等を指令するが、実際の制御を行うのはサーボアンプであり、研磨部材21の相対位置は上位コントローラ35には分からない。   Therefore, as described above, by constantly monitoring the relative position of the polishing member 21 to which the polishing pad 22 is attached, the torque monitor 38 can detect, for example, the relative position of the polishing member 21 and the torque of the servo motor 31 during normal operation. Is stored in a data table (not shown), and the torque fluctuation of the servo motor 31 corresponding to the relative movement of the polishing member 21 is compared with the data table to determine whether there is an abnormality in the apparatus. It becomes possible to determine, and it is possible to specify the location (or content) of the abnormality. The host controller 35 that controls the servo motor commands the movement distance, rotational speed, etc. of the polishing member 21, but the actual control is performed by a servo amplifier, and the relative position of the polishing member 21 is transferred to the host controller 35. I do n’t know.
一般に、研磨部材21の相対位置とサーボモータ31のトルクの大きさとの関係は、研磨部材21(研磨パッド22)がウェハWの中心側に移動するにつれてサーボモータ31のトルクが大きくなり、ウェハWの外側に移動するにつれてトルクが小さくなる。そのため、例えば、研磨部材21がウェハWの外側に移動する途中にトルクが大きくなった場合、研磨パッド22や研磨剤(スラリー)等の異常に起因するいわゆる引っかかり等の異常が考えられる。逆に、トルクが急激に小さくなった場合、モータ軸の破断(空転)等といった異常が考えられる。このように、装置の異常が発生したときに、発生箇所の特定を行うことが可能になる。   In general, the relationship between the relative position of the polishing member 21 and the magnitude of the torque of the servo motor 31 indicates that the torque of the servo motor 31 increases as the polishing member 21 (polishing pad 22) moves toward the center of the wafer W, and the wafer W The torque decreases as it moves outward. Therefore, for example, when the torque increases during the movement of the polishing member 21 to the outside of the wafer W, an abnormality such as a so-called catch due to an abnormality of the polishing pad 22 or the abrasive (slurry) can be considered. Conversely, when the torque suddenly decreases, an abnormality such as breakage (idling) of the motor shaft may be considered. As described above, when an abnormality occurs in the apparatus, it is possible to identify the occurrence location.
また、研磨パッド22がウェハWと接触する際トルクの立ち上がりが遅くなる応答遅れや、正常状態に対してトルクの変動が大きくなる状態を検知(異常判定)することで、計画的な装置保全が可能になり、装置の突発的な故障を防止することができる。   Further, systematic maintenance of the apparatus can be realized by detecting a response delay in which the rising of the torque is delayed when the polishing pad 22 is in contact with the wafer W and a state in which the fluctuation of the torque is larger than the normal state (abnormality determination). It becomes possible, and sudden failure of the apparatus can be prevented.
このように、以上のような構成のCMP装置Cによれば、装置の異常をより早く発見することが可能になる。特に、サーボモータ31を有する研磨部材21の回転駆動装置30に本発明を適用することで、高い効果を得ることができる。   As described above, according to the CMP apparatus C configured as described above, it is possible to detect an abnormality of the apparatus earlier. In particular, a high effect can be obtained by applying the present invention to the rotational drive device 30 of the polishing member 21 having the servo motor 31.
なお、上述の実施形態において、研磨部材21の下方においてウェハ保持装置10によりウェハWが吸着保持される研磨装置について説明したが、これに限られるものではなく、本発明は、研磨部材の上方において保持装置によりウェハが吸着保持される構成の研磨装置にも用いることができる。   In the above-described embodiment, the polishing apparatus in which the wafer W is sucked and held by the wafer holding apparatus 10 below the polishing member 21 has been described. However, the present invention is not limited to this, and the present invention is arranged above the polishing member. It can also be used in a polishing apparatus having a configuration in which a wafer is sucked and held by a holding device.
また、上述の実施形態において、被研磨物として円盤状の半導体ウェハWを用いているが、これに限られるものではなく、ガラス基板のように方形板状に形成されていてもよい。   Further, in the above-described embodiment, the disk-shaped semiconductor wafer W is used as the object to be polished, but the present invention is not limited to this, and it may be formed in a rectangular plate shape like a glass substrate.
また、上述の実施形態において、サーボモータ31を有する研磨部材21の回転駆動装置30に本発明を適用しているが、これに限られるものではなく、例えば、研磨アーム3を揺動させる電気モータや、ウェハ保持装置10を回転させる電気モータ等、ウェハWに対して研磨部材21を相対移動させる駆動装置であれば、本発明を適用可能である。   In the above-described embodiment, the present invention is applied to the rotational drive device 30 of the polishing member 21 having the servo motor 31. However, the present invention is not limited to this. For example, an electric motor that swings the polishing arm 3 is used. In addition, the present invention is applicable to any driving device that moves the polishing member 21 relative to the wafer W, such as an electric motor that rotates the wafer holding device 10.
また、上述の実施形態において、モータ動力ケーブル32に1つのモータ電流センサー基板36が配設されているが、これに限られるものではなく、例えば、3つのモータ電流センサー基板を並列に設け、それぞれの検出電流を加え合わせるようにしてもよい。このようにすれば、サーボモータ31に高い負荷が掛かって定格の300%の駆動電流が流れた場合であっても、サーボモータ31の駆動電流の大きさを正確に検出することができる。   In the above-described embodiment, one motor current sensor board 36 is disposed in the motor power cable 32. However, the present invention is not limited to this. For example, three motor current sensor boards are provided in parallel, These detection currents may be added together. In this way, even when a high load is applied to the servo motor 31 and a drive current of 300% of the rated current flows, the magnitude of the drive current of the servo motor 31 can be accurately detected.
本発明に係る研磨装置の一例であるCMP装置の平面図である。1 is a plan view of a CMP apparatus which is an example of a polishing apparatus according to the present invention. 研磨ヘッドの側面図である。It is a side view of a polishing head. サーボモータ周辺の回路ブロック図である。It is a circuit block diagram around a servo motor. サーボモータで生ずる研磨トルクの推移を示すグラフである。It is a graph which shows transition of grinding torque which arises with a servomotor.
符号の説明Explanation of symbols
C CMP装置(研磨装置) W ウェハ(被研磨物)
10 ウェハ保持装置
20 研磨ヘッド 21 研磨部材
22 研磨パッド 23 研磨面
30 回転駆動装置 31 サーボモータ
36 モータ電流センサー基板(電流検出器)
37 信号処理基板(トルク算出部)
38 トルクモニター(判定部および表示部)
39 エンコーダ(位置測定器)
C CMP equipment (polishing equipment) W Wafer (object to be polished)
DESCRIPTION OF SYMBOLS 10 Wafer holding device 20 Polishing head 21 Polishing member 22 Polishing pad 23 Polishing surface 30 Rotation drive device 31 Servo motor 36 Motor current sensor board (current detector)
37 Signal processing board (torque calculator)
38 Torque monitor (judgment section and display section)
39 Encoder (position measuring device)

Claims (5)

  1. 被研磨物を保持する保持装置と、前記保持装置に保持された前記被研磨物を研磨可能な研磨部材と、前記被研磨物に対して前記研磨部材を相対移動させる駆動装置とを備え、前記研磨部材を前記被研磨物に当接させながら前記駆動装置により相対移動させて前記被研磨物の研磨を行うように構成された研磨装置において、
    前記駆動装置は、前記研磨部材を前記相対移動させるためのトルクを生ずる電気モータを有して構成されており、
    前記トルクを生ずるために前記電気モータに供給される電流の大きさを検出する電流検出器と、
    前記電流検出器に検出された前記電流の大きさに基づいて、前記トルクの大きさを算出するトルク算出部と、
    前記トルク算出部で算出される前記トルクの変化に基づいて、装置の異常の有無を判定する判定部とを備えることを特徴とする研磨装置。
    A holding device for holding an object to be polished, a polishing member capable of polishing the object to be polished held by the holding device, and a drive device for moving the polishing member relative to the object to be polished, In a polishing apparatus configured to perform polishing of the object to be polished by moving the polishing member relative to the object to be polished while abutting the object to be polished,
    The driving device is configured to include an electric motor that generates torque for moving the polishing member relative to each other.
    A current detector for detecting a magnitude of a current supplied to the electric motor to generate the torque;
    A torque calculator that calculates the magnitude of the torque based on the magnitude of the current detected by the current detector;
    A polishing apparatus comprising: a determination unit that determines whether there is an abnormality in the apparatus based on a change in the torque calculated by the torque calculation unit.
  2. 前記トルク算出部で算出された前記トルクの大きさを表示する表示部を備えることを特徴とする請求項1に記載の研磨装置。   The polishing apparatus according to claim 1, further comprising a display unit that displays the magnitude of the torque calculated by the torque calculation unit.
  3. 前記被研磨物に対する前記研磨部材の相対位置を測定する位置測定器を備え、
    前記表示部は、前記位置測定器により測定された前記研磨部材の前記相対位置とともに、前記研磨部材が前記相対位置に位置するときの前記トルクの大きさを表示することを特徴とする請求項2に記載の研磨装置。
    A position measuring device for measuring a relative position of the polishing member with respect to the object to be polished;
    The said display part displays the magnitude | size of the said torque when the said polishing member is located in the said relative position with the said relative position of the said polishing member measured by the said position measuring device. The polishing apparatus according to 1.
  4. 前記駆動装置において、前記電気モータにより前記研磨部材を回転駆動するように構成されることを特徴とする請求項1から請求項3のうちいずれか一項に記載の研磨装置。   4. The polishing apparatus according to claim 1, wherein the driving device is configured to rotationally drive the polishing member by the electric motor. 5.
  5. 前記電気モータがサーボモータであることを特徴とする請求項1から請求項4のうちいずれか一項に記載の研磨装置。   The polishing apparatus according to any one of claims 1 to 4, wherein the electric motor is a servo motor.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011035348A (en) * 2009-08-06 2011-02-17 Fujitsu Semiconductor Ltd Chemical-mechanical polishing apparatus and method for operating the same
KR101369948B1 (en) * 2012-05-04 2014-03-04 이일영 Surface sweeping machine for vacume type
KR101383600B1 (en) * 2010-03-11 2014-04-11 주식회사 엘지화학 Apparatus and method for monitoring glass plate polishing state

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000288915A (en) * 1999-04-01 2000-10-17 Nikon Corp Polishing device and polishing method
JP2001138218A (en) * 1999-11-12 2001-05-22 Nec Corp Cmp machine
JP2002166353A (en) * 2000-11-29 2002-06-11 Toshiba Mach Co Ltd Automatic abrasive cloth life detection method and surface polishing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000288915A (en) * 1999-04-01 2000-10-17 Nikon Corp Polishing device and polishing method
JP2001138218A (en) * 1999-11-12 2001-05-22 Nec Corp Cmp machine
JP2002166353A (en) * 2000-11-29 2002-06-11 Toshiba Mach Co Ltd Automatic abrasive cloth life detection method and surface polishing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011035348A (en) * 2009-08-06 2011-02-17 Fujitsu Semiconductor Ltd Chemical-mechanical polishing apparatus and method for operating the same
KR101383600B1 (en) * 2010-03-11 2014-04-11 주식회사 엘지화학 Apparatus and method for monitoring glass plate polishing state
US9028294B2 (en) 2010-03-11 2015-05-12 Lg Chem, Ltd. Apparatus and method for monitoring glass plate polishing state
KR101369948B1 (en) * 2012-05-04 2014-03-04 이일영 Surface sweeping machine for vacume type

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