JP2009016541A5 - - Google Patents

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JP2009016541A5
JP2009016541A5 JP2007176202A JP2007176202A JP2009016541A5 JP 2009016541 A5 JP2009016541 A5 JP 2009016541A5 JP 2007176202 A JP2007176202 A JP 2007176202A JP 2007176202 A JP2007176202 A JP 2007176202A JP 2009016541 A5 JP2009016541 A5 JP 2009016541A5
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Japan
Prior art keywords
laser
cylindrical lens
light
convex
convex cylindrical
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JP2007176202A
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Japanese (ja)
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JP5288583B2 (en
JP2009016541A (en
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Priority to JP2007176202A priority Critical patent/JP5288583B2/en
Priority claimed from JP2007176202A external-priority patent/JP5288583B2/en
Publication of JP2009016541A publication Critical patent/JP2009016541A/en
Publication of JP2009016541A5 publication Critical patent/JP2009016541A5/ja
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Publication of JP5288583B2 publication Critical patent/JP5288583B2/en
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線状ビームを半導体膜に照射するレーザアニール装置であって、A laser annealing apparatus for irradiating a semiconductor film with a linear beam,
レーザ光源と、A laser light source;
第１の凹球面レンズと、A first concave spherical lens;
第１の凸球面レンズと、A first convex spherical lens;
シリンドリカルレンズアレイと、A cylindrical lens array;
第１の凸シリンドリカルレンズと、A first convex cylindrical lens;
遮蔽機構と、A shielding mechanism;
第２の凸シリンドリカルレンズと、A second convex cylindrical lens;
第３の凸シリンドリカルレンズと、を順に並べ、前記線状ビームの短軸方向をフラットトップ形状にすることを特徴とするレーザアニール装置。A laser annealing apparatus, wherein a third convex cylindrical lens is arranged in order, and the minor axis direction of the linear beam is formed into a flat top shape. 請求項１において、前記遮蔽機構は、前記第１の凸シリンドリカルレンズによる結像面に配置されていることを特徴とするレーザアニール装置。2. The laser annealing apparatus according to claim 1, wherein the shielding mechanism is disposed on an image plane formed by the first convex cylindrical lens. 線状ビームを半導体膜に照射する半導体装置の作製方法であって、A method for manufacturing a semiconductor device in which a semiconductor film is irradiated with a linear beam,
前記線状ビームの短軸方向において、In the minor axis direction of the linear beam,
レーザ光源から出射された光を第１の凹球面レンズに入射して拡大し、The light emitted from the laser light source is incident on the first concave spherical lens and magnified;
前記第１の凹球面レンズから出射された光を第１の凸球面レンズに入射して平行光にし、The light emitted from the first concave spherical lens is incident on the first convex spherical lens to be parallel light;
前記第１の凸球面レンズから出射された光をシリンドリカルレンズアレイに入射して光のエネルギー密度を均一にし、The light emitted from the first convex spherical lens is incident on the cylindrical lens array to make the energy density of the light uniform,
前記シリンドリカルレンズアレイから出射された光を第１の凸シリンドリカルレンズに入射して集光し、The light emitted from the cylindrical lens array is incident on the first convex cylindrical lens and condensed;
前記第１の凸シリンドリカルレンズで集光された光の結像面で遮蔽機構により光の一部を遮蔽し、A part of the light is shielded by a shielding mechanism on the image plane of the light collected by the first convex cylindrical lens,
前記遮蔽機構により一部遮蔽された光を第２の凸シリンドリカルレンズに入射して、平行光にし、The light partially shielded by the shielding mechanism is incident on the second convex cylindrical lens to be parallel light,
前記第２の凸シリンドリカルレンズから出射された光を第３の凸シリンドリカルレンズにより光を集光し、前記半導体膜をアニールすることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein light emitted from the second convex cylindrical lens is condensed by a third convex cylindrical lens, and the semiconductor film is annealed. 請求項３において、In claim 3,
前記レーザ光源は、Ｎｄ：ＹＡＧレーザ、Ｎｄ：ＹＬＦレーザ、Ｎｄ：ＹＶＯ４レーザ、Ｎｄ：ガラスレーザ、Ｙｂ：ＹＡＧレーザ、Ｙｂ：ＹＬＦレーザ、Ｙｂ：ＹＶＯ４レーザまたはＹｂ：ガラスレーザであることを特徴とする半導体装置の作製方法。The laser light source is an Nd: YAG laser, Nd: YLF laser, Nd: YVO4 laser, Nd: glass laser, Yb: YAG laser, Yb: YLF laser, Yb: YVO4 laser, or Yb: glass laser. A method for manufacturing a semiconductor device. 請求項３または４において、In claim 3 or 4,
前記半導体膜は非晶質半導体膜であることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the semiconductor film is an amorphous semiconductor film.
JP2007176202A 2007-07-04 2007-07-04 Method for manufacturing semiconductor device Expired - Fee Related JP5288583B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007176202A JP5288583B2 (en) 2007-07-04 2007-07-04 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007176202A JP5288583B2 (en) 2007-07-04 2007-07-04 Method for manufacturing semiconductor device

Publications (3)

Publication Number Publication Date
JP2009016541A JP2009016541A (en) 2009-01-22
JP2009016541A5 true JP2009016541A5 (en) 2010-07-08
JP5288583B2 JP5288583B2 (en) 2013-09-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007176202A Expired - Fee Related JP5288583B2 (en) 2007-07-04 2007-07-04 Method for manufacturing semiconductor device

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JP (1) JP5288583B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5148730B2 (en) * 2011-05-18 2013-02-20 昭和オプトロニクス株式会社 Fiber transfer laser optics
FR2989388B1 (en) * 2012-04-17 2019-10-18 Saint-Gobain Glass France PROCESS FOR OBTAINING A SUBSTRATE WITH A COATING
JP5980043B2 (en) 2012-08-22 2016-08-31 住友重機械工業株式会社 Laser irradiation device
DE102017126453A1 (en) * 2017-11-10 2019-05-16 Amphos GmbH Method for laser amplification
JP7265743B2 (en) * 2018-09-18 2023-04-27 株式会社オプトピア Light source device and line beam homogenizer using it
KR20200087907A (en) * 2019-01-11 2020-07-22 삼성디스플레이 주식회사 Laser crystallization device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129573A (en) * 1995-07-25 1997-05-16 Semiconductor Energy Lab Co Ltd Method and apparatus for laser annealing
JP3191702B2 (en) * 1996-11-25 2001-07-23 住友重機械工業株式会社 Beam homogenizer
JP2003053578A (en) * 2001-08-15 2003-02-26 Sumitomo Heavy Ind Ltd Method and device for adjusting profile of laser beam
JP2005129916A (en) * 2003-09-30 2005-05-19 Semiconductor Energy Lab Co Ltd Beam homogenizer, laser irradiation system, and semiconductor device production method
JP2009503593A (en) * 2005-08-02 2009-01-29 カール ツァイス レーザー オプティクス ゲーエムベーハー Optical system for producing line focus, scanning system using the optical system, and laser processing method for substrate

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