JP2009010147A - Coating film forming method - Google Patents
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本発明は、高段差のパターン（ハイバンプも含む）を形成した基板の表面にフォトレジスト、ＳＯＧ等の塗膜を形成する方法に関する。 The present invention relates to a method of forming a coating film such as a photoresist or SOG on the surface of a substrate on which a high step pattern (including high bumps) is formed.
半導体素子を形成するシリコンウエーハなどの基板にフォトレジスト、ＳＯＧ等塗布液の塗膜を形成するには、スピンナーを用いた回転塗布法が典型的に用いられている。この回転塗布法は、ノズルから基板中心に塗布液を滴下し、基板を回転させた後、基板をベークし塗膜を形成するものである。 In order to form a coating film of a coating solution such as a photoresist or SOG on a substrate such as a silicon wafer on which a semiconductor element is formed, a spin coating method using a spinner is typically used. In this spin coating method, a coating solution is dropped from the nozzle to the center of the substrate, the substrate is rotated, and then the substrate is baked to form a coating film.
ところで、特開２００６−１５２８８号公報（特許文献１）には、高段差基板に高粘度厚膜有機樹脂を塗布する工程において、塗布中に減圧し段差部で気泡の混入を防止する方法が記載されている。 By the way, Japanese Patent Application Laid-Open No. 2006-15288 (Patent Document 1) describes a method of preventing air bubbles from being mixed at a step portion by reducing pressure during application in a step of applying a high viscosity thick film organic resin to a high step substrate. Has been.
また、特開２００６−１０８３７４号公報（特許文献２）には、高粘度のレジストを回転塗布したときの気泡の巻き込みを防止するため、塗布膜に空気を吹き付けることが記載されている。 Japanese Patent Laid-Open No. 2006-108374 (Patent Document 2) describes that air is blown onto a coating film to prevent entrainment of bubbles when a high-viscosity resist is spin-coated.
特開２０００−２８８４５８号公報（特許文献３）には、配線パターン間の段差に塗布液を馴染ませ、より均一な塗膜を得るために、塗布液の溶剤を基板へ滴下するプリウェット処理を行い、次いで塗布液を塗布し、この後ベークする先行技術も提案されている。 Japanese Patent Laid-Open No. 2000-288458 (Patent Document 3) describes a pre-wet treatment in which a coating solution is dripped onto a substrate in order to adjust the coating solution to steps between wiring patterns and obtain a more uniform coating film. Prior art has also been proposed in which a coating liquid is applied, followed by baking.
配線パターン高さが３０ミクロン以上の高段差の場合に、ベークの際の収縮が大きいと段差を埋めることができなくなるので、フォトレジスト、ＳＯＧ等の高濃度の塗布液を用いている。高濃度の塗布液を基板表面に塗布した場合、配線パターン間の段差が大きいと段差内にエアを残したまま塗布液で基板の表面を覆ってしまうことがあり、この場合に、そのままベークすると、段差内にエアの部分を残したまま塗膜が形成されてしまう。この課題は、上記特許文献によっても解決されていない。 When the wiring pattern height is a high step of 30 microns or more, if the shrinkage during baking is large, the step cannot be filled. Therefore, a high-concentration coating solution such as photoresist or SOG is used. When a high concentration coating solution is applied to the substrate surface, if the step between the wiring patterns is large, the substrate surface may be covered with the coating solution while leaving air in the step. The coating film is formed while leaving the air portion in the step. This problem is not solved by the above-mentioned patent document.
また、高濃度の塗布液の場合、予め脱気装置にて塗布液中に溶解しているガスを取り除くようにしているが、簡単には十分に取り除くことができない。そして、塗布液中に溶解しているガスがベークの際に気泡となって顕在化し、基板表面に残ってしまう。 In the case of a high-concentration coating solution, the gas dissolved in the coating solution is previously removed by a deaeration device, but it cannot be easily removed sufficiently. Then, the gas dissolved in the coating liquid becomes air bubbles during baking and remains on the substrate surface.
上記課題を解決するため本発明は、配線パターンが形成された基板表面に溶剤を塗布する第１工程と、溶剤が塗布された基板表面に塗布液を塗布し配線パターン間の段差に塗布液を充填する第２工程と、塗布液が塗布された基板を減圧雰囲気に置いて、前記配線パターン間の段差内に封じ込められたエア、塗布液中に溶存しているガス又はこれらエア及びガスの両方を脱気する第３工程と、脱気が終了した基板を加熱して配線パターン間の段差を塗膜で埋設する第４工程とからなる。 In order to solve the above problems, the present invention includes a first step of applying a solvent to a substrate surface on which a wiring pattern is formed, a coating solution applied to the substrate surface on which the solvent is applied, and applying the coating solution to a step between the wiring patterns. The second step of filling, and the substrate coated with the coating solution placed in a reduced-pressure atmosphere, the air enclosed in the step between the wiring patterns, the gas dissolved in the coating solution, or both of these air and gas And a fourth step of heating the substrate after the deaeration and embedding a step between the wiring patterns with a coating film.
基板表面に塗布される溶剤としては、塗布液を構成する溶剤と同一の溶剤が好ましい。 As the solvent applied to the substrate surface, the same solvent as the solvent constituting the coating liquid is preferable.
また、基板表面に溶剤を予め塗布しておくことで、この後に塗布する塗布液の濃度が濃くても配線パターン間の段差に侵入しやすくなる。塗布液の濃度を濃くすることで加熱時の収縮を抑えることができる。 In addition, by applying a solvent to the substrate surface in advance, even if the concentration of the coating solution to be applied thereafter is high, it becomes easy to enter the steps between the wiring patterns. Shrinkage during heating can be suppressed by increasing the concentration of the coating solution.
更に、基板表面と溶剤とのなじみを良くするために、予め基板表面を親水化処理しておくことが好ましい。親水化処理の手段としては紫外線の照射或いは酸素ガスプラズマに基板表面を曝す方法などが考えられる。 Furthermore, in order to improve the compatibility between the substrate surface and the solvent, it is preferable to hydrophilize the substrate surface in advance. As a means for hydrophilization treatment, a method of exposing the substrate surface to ultraviolet irradiation or oxygen gas plasma can be considered.
また、配線パターン間の段差が大きいときには、塗布液の塗布を２段階以上で行うことが好ましい。この場合は、各段階でプリベークを行うとともにプリベークの前に減圧雰囲気として段差内に封じ込められたエア、塗布液中に溶存しているガス又はこれらのエア及びガスの両方を気泡にして脱気し、この後、最終的なベークを行う。 Moreover, when the level | step difference between wiring patterns is large, it is preferable to apply | coat a coating liquid in two steps or more. In this case, pre-baking is performed at each stage, and the air enclosed in the step as a decompressed atmosphere before pre-baking, the gas dissolved in the coating solution, or both of these air and gas are deaerated. After this, the final baking is performed.
本発明に係る塗膜形成方法によれば、基板表面に溶剤を塗布して基板に形成された配線パターン間の段差に塗布液を充填するにあたり、予め基板表面に溶剤を塗布しておくことで、段差内に塗布液が侵入しやすくなり、高濃度の塗布液を用いて高段差の配線パターンに塗布しても、段差内にエアが残りにくい。 According to the method for forming a coating film according to the present invention, when a solvent is applied to the substrate surface and the coating liquid is filled in the steps between the wiring patterns formed on the substrate, the solvent is applied to the substrate surface in advance. The coating liquid easily enters the step, and even if it is applied to the wiring pattern with a high step using a high concentration coating liquid, it is difficult for air to remain in the step.
また、高濃度の塗布液であっても、僅かな時間内で、即ち塗布液を乾燥させない時間内で、塗布液中の溶存ガスを除去することができる。 Further, even in the case of a high concentration coating solution, dissolved gas in the coating solution can be removed within a short time, that is, within a time during which the coating solution is not dried.
更に、溶剤を塗布する前に基板表面を親水化しておけば、溶剤自体の基板に対するなじみがよくなり、溶剤が薄く且つ均一に広がるため、段差内への塗布液の充填がスムーズに行われる。 Further, if the surface of the substrate is made hydrophilic before the solvent is applied, the familiarity of the solvent itself with the substrate is improved, and the solvent is thin and spreads uniformly, so that the coating liquid can be smoothly filled in the steps.
以下に本発明の好適な実施例を添付図面に基づいて説明する。図１は本発明に係る塗膜形成方法の工程を示すブロック図であり、本発明にあっては、配線パターンが形成された基板（半導体ウェーハ）の表面に溶剤を塗布する。溶剤としては、続く工程で塗布液を塗布したとき、析出物を発生させない溶剤であることが好ましく、例えば塗布液を構成する溶剤と同一の溶剤を用いることができる。このような溶剤としては特に限定はされないが、例えば、種々のアルコール系溶剤、エーテル系溶剤、エステル系溶剤、ケトン系溶剤などを挙げることができ、具体的には、メタノール、エタノール、プロパノール、ブタノール、エチルセロソルブアセテート、乳酸エチル、ピルビン酸エチル、酢酸ブチル、γ−ブチロラクトン、２−ヘプタノン、シクロヘキサノン、３−メトキシブチルアセテート、３−メトキシ−１−ブタノール、メチル−３−メトキシプロピオネート、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノメチルエーテルアセテート、ジプロピレングリコールモノメチルエーテル、エチル−３−エトキシプロピオネート、３−メトキシ−３−メチルブタノールなどを挙げることができる。 Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a block diagram showing the steps of a coating film forming method according to the present invention. In the present invention, a solvent is applied to the surface of a substrate (semiconductor wafer) on which a wiring pattern is formed. The solvent is preferably a solvent that does not generate a precipitate when the coating liquid is applied in the subsequent step. For example, the same solvent as the solvent constituting the coating liquid can be used. Examples of such solvents include, but are not limited to, various alcohol solvents, ether solvents, ester solvents, ketone solvents and the like. Specifically, methanol, ethanol, propanol, butanol , Ethyl cellosolve acetate, ethyl lactate, ethyl pyruvate, butyl acetate, γ-butyrolactone, 2-heptanone, cyclohexanone, 3-methoxybutyl acetate, 3-methoxy-1-butanol, methyl-3-methoxypropionate, propylene glycol Monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate, dipropylene glycol monomethyl ether, ethyl-3-ethoxypropylene Sulfonates, such as 3-methoxy-3-methyl butanol.
次いで基板表面に塗布液（固形分濃度３０〜６０重量％のフォトレジスト）を塗布し、５００〜１３００ｒｐｍ、好ましくは１０００ｒｐｍ程度で回転せしめて該塗布液表面を平坦にした後、２０００Ｐａ以下、好ましくは５００〜１５００Ｐａの減圧下で１〜３分間保持し、段差内に封じ込められたエア及び塗布液に溶存しているガスを脱気する。 Next, a coating liquid (photoresist having a solid content concentration of 30 to 60% by weight) is applied to the substrate surface, and rotated at 500 to 1300 rpm, preferably about 1000 rpm, to flatten the surface of the coating liquid, and then 2000 Pa or less, preferably It hold | maintains for 1 to 3 minutes under reduced pressure of 500-1500 Pa, and the gas dissolved in the air and coating liquid which were enclosed in the level | step difference is deaerated.
段差が高段差の場合や段差のアスペクト比が大きい場合には、該塗布液を複数回に分けて塗布することが好ましい。この場合、各塗布工程ごとに減圧処理とプリベークを行う。プリベークを２回に分けて塗布する場合には、１回目の塗布のプリベークの温度を２回目の塗布のプリベークの温度よりも低くする。１回目の温度と時間は、５０〜１００℃、好ましくは６０〜８０℃で１〜５分、例えば７０℃／３分、２回目の温度と時間は、１００〜１５０℃、好ましくは１００〜１３０℃で１〜６０分、例えば１２０℃／３０分とする。 When the step is a high step or the aspect ratio of the step is large, it is preferable to apply the coating solution in a plurality of times. In this case, a decompression process and pre-baking are performed for each coating process. When the pre-bake is applied in two steps, the pre-bake temperature for the first application is set lower than the pre-bake temperature for the second application. The first temperature and time are 50 to 100 ° C., preferably 60 to 80 ° C. for 1 to 5 minutes, for example 70 ° C./3 minutes, and the second temperature and time are 100 to 150 ° C., preferably 100 to 130 ° C. 1 to 60 minutes at, for example, 120 ° C./30 minutes.
この後、最終的なベークを行って、段差内に塗膜を形成する。最終的なベークの条件としては、１００〜２００℃で１〜１５分、例えば１５０℃／３分とする。
高段差とは、配線パターンの段差が３０〜４００ミクロン、好適には３０〜１００ミクロンである。また、そのような高段差を有する基板に用いる塗布液としては、フォトレジスト、ＳＯＧ等であり、その固形分濃度が３０〜６０重量％、好適には、４０〜５５重量％のフォトレジストである。
Thereafter, final baking is performed to form a coating film in the step. The final baking condition is 100 to 200 ° C. for 1 to 15 minutes, for example, 150 ° C./3 minutes.
The high step means that the step of the wiring pattern is 30 to 400 microns, preferably 30 to 100 microns. The coating solution used for the substrate having such a high step is a photoresist, SOG, or the like, and the photoresist has a solid concentration of 30 to 60% by weight, preferably 40 to 55% by weight. .
図２は別実施例に係る塗膜形成方法の工程を示すブロック図であり、この実施例にあっては、溶剤塗布の前工程として、基板表面をＵＶ照射またはＯ２プラズマに曝すことで親水化するようにしている。 FIG. 2 is a block diagram showing the steps of a coating film forming method according to another embodiment. In this embodiment, as a pre-process for solvent coating, the substrate surface is exposed to UV irradiation or O 2 plasma to make it hydrophilic. It tries to become.
以下に具体的な実施例と比較例を挙げて説明する。
実施例１
４００ミクロンの配線パターンの段差が設けられたシリコンウエーハ（基板）にプロピレングリコールモノメチルエーテルアセテート（ＰＧＭＥＡ）溶剤を塗布し、６０秒間静止させ、次いで上記溶剤が乾燥する前に、シリコンウエーハ表面にＰＧＭＥＡを溶剤とする固形分濃度５５重量％のフォトレジスト塗布液（製品名：ＰＭＥＲ Ｐ−ＣＡ１０００ＰＭ（東京応化工業社製））を回転数１０００ｒｐｍにて回転塗布した後、１３００Ｐａの減圧雰囲気下に上記塗布された基板を６０秒間処理した。次いで７０℃で３分間及び１２０℃で３分間のプリベーク処理した（１回目の塗布・減圧雰囲気下処理・プリベークの一連の処理）。次いで、同固形分濃度の同フォトレジスト塗布液を用い、１回目の塗布・減圧雰囲気下処理・プリベークの一連の処理と同じ条件で２回目の一連の処理を行った。この後最終的なベークとして１５０℃で１５分間の加熱を行った。
その結果、４００ミクロンの段差の埋め込み性は良好で、段差内の発泡・表面荒れもなく基板全体にわたり均一な塗膜が形成されていた。
Hereinafter, specific examples and comparative examples will be described.
Example 1
Apply a propylene glycol monomethyl ether acetate (PGMEA) solvent to a silicon wafer (substrate) with a 400 micron wiring pattern step, let it stand for 60 seconds, and then dry the PGMEA on the silicon wafer surface before the solvent dries. A photoresist coating solution (product name: PMER P-CA1000PM (manufactured by Tokyo Ohka Kogyo Co., Ltd.)) having a solid content concentration of 55% by weight as a solvent is spin-coated at a rotation speed of 1000 rpm, and the above-mentioned coating is applied in a reduced pressure atmosphere of 1300 Pa. The substrate was treated for 60 seconds. Next, pre-baking treatment was performed at 70 ° C. for 3 minutes and 120 ° C. for 3 minutes (a series of treatments of first application, treatment under reduced pressure atmosphere, and pre-baking). Next, using the same photoresist coating solution with the same solid content concentration, a second series of treatments was performed under the same conditions as the first series of coating, treatment under reduced pressure atmosphere, and pre-baking. Thereafter, heating was performed at 150 ° C. for 15 minutes as a final bake.
As a result, the embedding property of the step of 400 microns was good, and a uniform coating film was formed over the entire substrate without foaming and surface roughness in the step.
実施例２
４００ミクロンの配線パターンの段差が設けられたシリコンウエーハ（基板）の表面に１７２ｎｍの波長の光を出力するＵＶランプを用いて６０秒間のＵＶ照射を行った。次いでシリコンウエーハ表面にＰＧＭＥＡ溶剤を塗布し、更に上記溶剤が乾燥する前に、シリコンウエーハ表面にＰＧＭＥＡを溶剤とする固形分濃度５５重量％のフォトレジスト塗布液（製品名：ＰＭＥＲ Ｐ−ＣＡ１０００ＰＭ（東京応化工業社製））を回転数５００ｒｐｍにて回転塗布した後、１３００Ｐａの減圧雰囲気下に上記塗布された基板を６０秒間処理した。次いで７０℃で３分間及び１２０℃で３分間のプリベーク処理した（１回目の塗布・減圧雰囲気下処理・プリベークの一連の処理）。次いで、同固形分濃度の同フォトレジスト塗布液を用い、１回目の塗布・減圧雰囲気下処理・プリベークの一連の処理と同じ条件で２回目の一連の処理を行った。この後最終的なベークとして１５０℃で１５分間の加熱を行った。
その結果、４００ミクロンの段差の埋め込み性は良好で、段差内の発泡・表面荒れもなく基板全体にわたり均一な塗膜が形成されていた。
Example 2
The surface of a silicon wafer (substrate) having a 400 micron wiring pattern step was irradiated with UV for 60 seconds using a UV lamp that output light having a wavelength of 172 nm. Next, a PGMEA solvent is applied to the surface of the silicon wafer, and before the solvent is further dried, a photoresist coating solution (product name: PMER P-CA1000PM having a solid content concentration of 55% by weight using PGMEA as a solvent on the surface of the silicon wafer (Tokyo) Oka Kogyo Co., Ltd.)) was spin-coated at 500 rpm, and the coated substrate was treated for 60 seconds in a reduced pressure atmosphere of 1300 Pa. Next, pre-baking treatment was performed at 70 ° C. for 3 minutes and 120 ° C. for 3 minutes (a series of treatments of first application, treatment under reduced pressure atmosphere, and pre-baking). Next, using the same photoresist coating solution with the same solid content concentration, a second series of treatments was performed under the same conditions as the first series of coating, treatment under reduced pressure atmosphere, and pre-baking. Thereafter, heating was performed at 150 ° C. for 15 minutes as a final bake.
As a result, the embedding property of the step of 400 microns was good, and a uniform coating film was formed over the entire substrate without foaming and surface roughness in the step.
比較例１
実施例１において、溶剤塗布を行わなかった以外は同様にして、塗膜を形成した。その結果、４００ミクロンの段差の埋め込み性は十分ではなく、段差内の発泡・表面荒れも共に発生していた。
Comparative Example 1
In Example 1, a coating film was formed in the same manner except that the solvent application was not performed. As a result, the embedding property of the step of 400 microns was not sufficient, and both foaming and surface roughness in the step occurred.
比較例２
フォトレジスト塗布液の固形分濃度を３７％に変え、フォトレジスト塗布前の溶剤塗布および減圧雰囲気下処理を行わず、その他は実施例１と同様にして塗膜を形成した。
その結果、４００ミクロンの段差の埋め込み性は十分ではなく、段差内の発泡・表面荒れも共に発生していた。
Comparative Example 2
A coating film was formed in the same manner as in Example 1 except that the solid content concentration of the photoresist coating solution was changed to 37%, the solvent coating before the photoresist coating and the treatment under reduced pressure atmosphere were not performed.
As a result, the embedding property of the step of 400 microns was not sufficient, and both foaming and surface roughness in the step occurred.
Claims (3)
（１）配線パターンが形成された基板表面に溶剤を塗布する工程
（２）溶剤が塗布された基板表面に塗布液を塗布し配線パターン間の段差に塗布液を充填する工程
（３）塗布液が塗布された基板を減圧雰囲気に置いて、前記配線パターン間の段差内に封じ込められたエア、塗布液中に溶存しているガス又はこれらエア及びガスの両方を脱気する工程
（４）脱気が終了した基板を加熱して配線パターン間の段差を塗膜で埋設する工程 A coating film forming method comprising the following steps (1) to (4).
(1) A step of applying a solvent to the substrate surface on which the wiring pattern is formed (2) A step of applying a coating solution to the substrate surface on which the solvent is applied and filling the step between the wiring patterns with the coating solution (3) A coating solution (4) Degassing step (4) in which the substrate coated with is placed in a reduced-pressure atmosphere and the air, the gas dissolved in the coating solution, or both of the air and the gas are encapsulated in the step between the wiring patterns. The process of heating the substrate that has been exhausted and embedding the steps between the wiring patterns with a coating film
（１）配線パターンが形成された基板表面を親水化する工程
（２）親水化された基板表面に溶剤を塗布する工程
（３）溶剤が塗布された基板表面に塗布液を塗布し配線パターン間の段差に塗布液を充填する工程
（４）塗布液が塗布された基板を減圧雰囲気に置いて、前記配線パターン間の段差内に封じ込められたエア、塗布液中に溶存しているガス又はこれらエア及びガスの両方を脱気する工程
（５）脱気が終了した基板を加熱して配線パターン間の段差を塗膜で埋設する工程 A coating film forming method comprising the following steps (1) to (5).
(1) A step of hydrophilizing the substrate surface on which the wiring pattern is formed (2) A step of applying a solvent to the hydrophilicized substrate surface (3) A coating solution is applied to the substrate surface on which the solvent is applied, and between the wiring patterns (4) The substrate coated with the coating solution is placed in a reduced pressure atmosphere, and the air enclosed in the step between the wiring patterns, the gas dissolved in the coating solution, or these Step of degassing both air and gas (5) Step of heating the substrate after degassing and embedding a step between wiring patterns with a coating film
3. The method for forming a coating film according to claim 2, wherein the means for hydrophilizing the substrate surface irradiates the substrate surface with ultraviolet light or exposes it to oxygen gas plasma.
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