JP2009007312A - Cyclohexyl methyl phosphonate derivative - Google Patents

Cyclohexyl methyl phosphonate derivative Download PDF

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JP2009007312A
JP2009007312A JP2007172080A JP2007172080A JP2009007312A JP 2009007312 A JP2009007312 A JP 2009007312A JP 2007172080 A JP2007172080 A JP 2007172080A JP 2007172080 A JP2007172080 A JP 2007172080A JP 2009007312 A JP2009007312 A JP 2009007312A
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JP5146719B2 (en
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Yutaka Kadomoto
豊 門本
Masashi Osawa
政志 大澤
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DIC Corp
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Dainippon Ink and Chemicals Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for efficiently producing an (E)-1,2-bis(trans-4-alkylcyclohexyl)ethylene derivative and to provide an intermediate useful for the production method. <P>SOLUTION: A cyclohexyl methyl phosphonate derivative represented by general formula (III) is reacted with an aldehyde represented by formula (IV) (wherein R<SP>1</SP>is an alkyl group or the like; A is a phenylene group which may be fluorinated; Y is a fluorine atom or the like; and n, o and p are each an integer) under a strongly basic condition to produce an (E)-1,2-bis(cyclohexyl)ethylene derivative. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は電気光学的液晶表示材料の製造中間体として有用な、シクロヘキシルメチルホスホナート誘導体及びその製造方法に関する。   The present invention relates to a cyclohexylmethylphosphonate derivative useful as an intermediate for producing an electro-optical liquid crystal display material and a method for producing the same.

液晶表示素子は、時計、電卓をはじめとして、家庭用各種電気機器、測定機器、自動車用パネル、電子手帳、プリンター、コンピューター、テレビ等に用いられるようになっている。これに用いられる液晶材料として、正又は負の誘電率異方性を有する液晶材料が電場応答する為に必須であるが、併せて応答速度を向上させる等のため、組成物の粘性を下げる働きを有する液晶材料(減粘剤)を用いることが一般的である。減粘剤には同時に優れた液晶性を有することが求められているが、(E)-1,2-ビス(シクロヘキシル)エチレン誘導体はこの目的のために極めて有用である(非特許文献1参照)。その製造法については、幾つかが知られている(特許文献1、特許文献2及び非特許文献2参照)。しかしながら、これらの製造方法は必ずしも実用的なものではない。例えば特許文献1及び特許文献2では、(Z)-体を過酸化物で酸化し、次いでジブロモトリフェニルホスホランで臭素化した後、亜鉛で還元することによって(E)-体を得ているが、その収率は低い。また、非特許文献2では、1,2-ビス(トランス-4-アルキルシクロヘキシル)エタン-1,2-ジケトンをジヒドラゾンとし、これを1,2-ビス(トランス-4-アルキルシクロヘキシル)アセチレンに変換した後、これを還元することによって(E)-1,2-ビス(トランス-4-アルキルシクロヘキシル)エチレン誘導体を得ているが、毒性の高いヒドラジン及びヘキサメチルリン酸トリアミド(HMPT)を用いている他、発火性の金属リチウムを用いており、実用的なものではない。一方、実用的な製造法として、(Z)-1,2-ビス(トランス-4-アルキルシクロヘキシル)エチレン誘導体を異性化することによる製造方法が知られているが、工程数が多いという問題があった (特許文献3参照)。   Liquid crystal display elements are used in various electric appliances for home use, measuring instruments, automobile panels, electronic notebooks, printers, computers, televisions, etc., including watches and calculators. As a liquid crystal material used for this, a liquid crystal material having positive or negative dielectric anisotropy is indispensable for an electric field response. However, in order to improve the response speed, etc., it works to lower the viscosity of the composition. It is common to use a liquid crystal material (thickening agent) having Although a thinning agent is required to have excellent liquid crystallinity at the same time, (E) -1,2-bis (cyclohexyl) ethylene derivatives are extremely useful for this purpose (see Non-Patent Document 1). ). There are several known manufacturing methods (see Patent Document 1, Patent Document 2, and Non-Patent Document 2). However, these manufacturing methods are not always practical. For example, in Patent Document 1 and Patent Document 2, the (Z) -form is oxidized with peroxide, then brominated with dibromotriphenylphosphorane, and then reduced with zinc to obtain the (E) -form. However, the yield is low. In Non-Patent Document 2, 1,2-bis (trans-4-alkylcyclohexyl) ethane-1,2-diketone is converted to dihydrazone and converted to 1,2-bis (trans-4-alkylcyclohexyl) acetylene. (E) -1,2-bis (trans-4-alkylcyclohexyl) ethylene derivative was obtained by reducing this, but using highly toxic hydrazine and hexamethylphosphoric triamide (HMPT) In addition, ignitable metallic lithium is used and is not practical. On the other hand, as a practical production method, a production method by isomerizing a (Z) -1,2-bis (trans-4-alkylcyclohexyl) ethylene derivative is known, but there is a problem that the number of steps is large. (See Patent Document 3).

特開平6−92924号公報(19頁)JP-A-6-92924 (page 19) 特許第3418398号公報(5頁)Japanese Patent No. 3418398 (5 pages) 特許公開2006−89432号公報Japanese Patent Publication No. 2006-89432 液晶 第1巻 第一号 19頁(1997年)Liquid Crystal Volume 1 Issue 1 Page 19 (1997) Chemiker−Zeitung, 104, p.269(1980年)Chemiker-Zeitung, 104, p. 269 (1980)

本発明の解決しようとする課題は、(E)-1,2-ビス(トランス-4-アルキルシクロヘキシル)エチレン誘導体を製造する上で有用な製造中間体を提供し、併せて当該化合物の効率的な製造方法を提供することにある。   The problem to be solved by the present invention is to provide a production intermediate useful for producing an (E) -1,2-bis (trans-4-alkylcyclohexyl) ethylene derivative, and to efficiently produce the compound. Is to provide a simple manufacturing method.

上記課題を解決するために鋭意検討した結果、シクロヘキシルメチルホスホナート誘導体とアルデヒドによるHorner-Wadsworth-Emmons型反応を行い、得られた付加生成物から加熱によりリン酸ジエステルを脱離させることにより、(E)-1,2-ビス(トランス-4-アルキルシクロヘキシル)エチレン誘導体が高選択的に得られ、煩雑な異性化処理を省略した短工程で合成可能であることを見出し、本発明を完成するに至った。
本発明は以下の製造方法及び製造中間体を提供する。すなわち、一般式(I)
As a result of intensive studies to solve the above-mentioned problems, a Horner-Wadsworth-Emmons type reaction with a cyclohexylmethylphosphonate derivative and an aldehyde is carried out, and by removing the phosphate diester from the resulting addition product by heating, ( E) -1,2-bis (trans-4-alkylcyclohexyl) ethylene derivative is obtained with high selectivity and can be synthesized in a short process without complicated isomerization, and the present invention is completed. It came to.
The present invention provides the following production methods and production intermediates. That is, the general formula (I)

Figure 2009007312
(式中、R1は炭素原子数1〜10の直鎖状アルキル基を表し、nは1又は2を表し、Xは塩素、臭素、よう素、ベンゼンスルホニルオキシ基、p−トルエンスルホニルオキシ基、メタンスルホニルオキシ基又はトリフロオロメタンスルホニルオキシ基を表す。)で表される化合物に、一般式(II)
Figure 2009007312
(In the formula, R 1 represents a linear alkyl group having 1 to 10 carbon atoms, n represents 1 or 2, X represents chlorine, bromine, iodine, benzenesulfonyloxy group, p-toluenesulfonyloxy group. Represents a methanesulfonyloxy group or a trifluoromethanesulfonyloxy group), and the compound represented by the general formula (II)

Figure 2009007312
(式中、R2は炭素原子数1〜10のアルキル基を表す。)で表される化合物を塩基条件下反応させ、一般式(III)
Figure 2009007312
(In the formula, R 2 represents an alkyl group having 1 to 10 carbon atoms.) The compound represented by the general formula (III) is reacted under basic conditions.

Figure 2009007312
Figure 2009007312

(式中、R1は炭素原子数1〜10の直鎖状アルキル基を表し、R2は炭素原子数1〜10のアルキル基を表し、nは1又は2を表す。)で表される化合物の製造方法及び当該化合物を提供するとともに、一般式(III) で表される化合物に、一般式(IV) (Wherein R 1 represents a linear alkyl group having 1 to 10 carbon atoms, R 2 represents an alkyl group having 1 to 10 carbon atoms, and n represents 1 or 2). Provided is a method for producing a compound and the compound, and the compound represented by the general formula (III) is represented by the general formula (IV)

Figure 2009007312
Figure 2009007312

(式中、o及びpはそれぞれ独立的に0、1又は2を表すが、1≦o+p≦3であり、Aはフッ素原子により置換されていても良い1,4−フェニレン基を表し、Yはフッ素原子、トリフルオロメトキシ基、ジフルオロメトキシ基、トリフルオロメチル基、炭素原子数1〜10のアルキル基、炭素原子数1〜10のアルコキシ基、炭素原子数2〜10のアルケニル基又は炭素原子数3〜10のアルケニルオキシ基を表す。)で表される化合物を強塩基条件下に反応させることによる一般式(V) (In the formula, o and p each independently represent 0, 1 or 2, but 1 ≦ o + p ≦ 3, A represents a 1,4-phenylene group optionally substituted by a fluorine atom, Y Is a fluorine atom, trifluoromethoxy group, difluoromethoxy group, trifluoromethyl group, alkyl group having 1 to 10 carbon atoms, alkoxy group having 1 to 10 carbon atoms, alkenyl group having 2 to 10 carbon atoms, or carbon atom (Representing an alkenyloxy group of formula 3 to 10)) by reacting a compound represented by the formula (V) under strong base conditions

Figure 2009007312
Figure 2009007312

(式中、nは0、1又は2を表し、o及びpはそれぞれ独立的に0、1又は2を表すが、1≦o+p≦3であり、Aはフッ素原子により置換されていても良い1,4−フェニレン基を表し、Yはフッ素原子、トリフルオロメトキシ基、ジフルオロメトキシ基、トリフルオロメチル基、炭素原子数1〜10のアルキル基、炭素原子数1〜10のアルコキシ基、炭素原子数2〜10のアルケニル基又は炭素原子数3〜10のアルケニルオキシ基を表す。)で表される化合物の製造方法を提供する。 (In the formula, n represents 0, 1 or 2, and o and p each independently represent 0, 1 or 2, but 1 ≦ o + p ≦ 3, and A may be substituted by a fluorine atom. Y represents a fluorine atom, a trifluoromethoxy group, a difluoromethoxy group, a trifluoromethyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a carbon atom A alkenyl group having 2 to 10 carbon atoms or an alkenyloxy group having 3 to 10 carbon atoms).

本発明の製造方法により(E)-1,2-ビス(トランス-4-アルキルシクロヘキシル)エチレン構造を有する液晶性化合物を製造するために有用なシクロヘキシルメチルホスホナート誘導体を効率的に製造可能である。本願発明のシクロヘキシルメチルホスホナート誘導体を用いることにより、E型の2重結合を高選択的に形成可能で、煩雑な異性化処理を省略した短工程で(E)-1,2-ビス(トランス-4-アルキルシクロヘキシル)エチレン構造を有する液晶性化合物を簡便且つ効率的に製造可能である。   A cyclohexylmethylphosphonate derivative useful for producing a liquid crystalline compound having an (E) -1,2-bis (trans-4-alkylcyclohexyl) ethylene structure can be efficiently produced by the production method of the present invention. . By using the cyclohexylmethylphosphonate derivative of the present invention, an E-type double bond can be formed with high selectivity, and (E) -1,2-bis (trans A liquid crystalline compound having a -4-alkylcyclohexyl) ethylene structure can be produced simply and efficiently.

以下に本発明について詳細に説明する。
一般式(I)においてR1は炭素原子数1〜10の直鎖状アルキル基を表し、具体的には−CH2CH3、−(CH2)2CH3、−(CH2)3CH3、−(CH2)4CH3を表すことが好ましい。nは0、1又は2を表し、Xは塩素、臭素、よう素、ベンゼンスルホニルオキシ基、p−トルエンスルホニルオキシ基、メタンスルホニルオキシ基又はトリフロオロメタンスルホニルオキシ基を表すが、臭素が好ましい。
The present invention is described in detail below.
In the general formula (I), R 1 represents a linear alkyl group having 1 to 10 carbon atoms, specifically, —CH 2 CH 3 , — (CH 2 ) 2 CH 3 , — (CH 2 ) 3 CH 3, - (CH 2) preferably represents a 4 CH 3. n represents 0, 1 or 2, and X represents chlorine, bromine, iodine, benzenesulfonyloxy group, p-toluenesulfonyloxy group, methanesulfonyloxy group or trifluoromethanesulfonyloxy group, with bromine being preferred.

一般式(II)において、R2は炭素原子数1〜10のアルキル基を表すことが好ましく、具体的には−CH3、−CH2CH3、−(CH2)2CH3、−CH2 (CH3)2、−(CH2)3CH3を表すことが好ましい。 In the general formula (II), R 2 preferably represents an alkyl group having 1 to 10 carbon atoms. Specifically, —CH 3 , —CH 2 CH 3 , — (CH 2 ) 2 CH 3 , —CH 2 (CH 3 ) 2 and — (CH 2 ) 3 CH 3 are preferably represented.

一般式(III)は、一般式(I)と一般式(II)を塩基存在下に反応させるが、塩基として金属アルコキシドを用いることが好ましく、具体的にはナトリウムメトキシド、ナトリウムエトキシド、ナトリウムtert-ブトキシド、カリウムtert-ブトキシドが好ましく、ナトリウムtert-ブトキシド又はカリウムtert-ブトキシドがより好ましい。   In the general formula (III), the general formula (I) and the general formula (II) are reacted in the presence of a base, and a metal alkoxide is preferably used as a base. Specifically, sodium methoxide, sodium ethoxide, sodium Tert-butoxide and potassium tert-butoxide are preferred, and sodium tert-butoxide and potassium tert-butoxide are more preferred.

溶媒としては、反応を好適に進行させるものであればいずれでも構わないが、テトラヒドロフラン(THF)、ジエチルエーテル、ジイソプロピルエーテル、メチルt-ブチルエーテル等のエーテル系溶媒や、N,N-ジメチルホルムアミド(DMF)、N,N-ジメチルアセトアミド(DMA)、N-メチルピロリドン等のアミド系溶媒を単独又は混合して用いることができるが、ジメチルホルムアミド(DMF)を用いることが好ましい。
反応温度は溶媒の凝固点から還流温度範囲で行うことができるが、50℃から70℃が好ましい。
Any solvent may be used as long as it allows the reaction to proceed appropriately. Ether solvents such as tetrahydrofuran (THF), diethyl ether, diisopropyl ether, and methyl t-butyl ether, and N, N-dimethylformamide (DMF) ), N, N-dimethylacetamide (DMA), N-methylpyrrolidone and other amide solvents can be used alone or in combination, but dimethylformamide (DMF) is preferably used.
The reaction temperature can be in the range from the freezing point of the solvent to the reflux temperature, but is preferably from 50 ° C to 70 ° C.

一般式(IV)において、o及びpはそれぞれ独立的に0、1又は2を表すが、o+p≦3が好ましく、Aはフッ素原子により置換されていても良い1,4−フェニレン基を表すことが好ましい。Yはフッ素原子、トリフルオロメトキシ基、ジフルオロメトキシ基、トリフルオロメチル基、炭素原子数1〜10のアルキル基、炭素原子数1〜10のアルコキシ基、炭素原子数2〜10のアルケニル基又は炭素原子数3〜10のアルケニルオキシ基を表すことが好ましく、具体的には−F、−OCF3、−OCF2H、−CF3、−(CH2)2CH3、−(CH2)3CH3、−(CH2)4CH3、−CH=CH2、−CH=CHCH3(E体)、−OCH3、−OCH2CH3、−O(CH2)2CH3、−O(CH2)3CH3、−O(CH2)2CH=CH2を表すことが好ましい。 In general formula (IV), o and p each independently represent 0, 1 or 2, but preferably o + p ≦ 3, and A represents a 1,4-phenylene group which may be substituted with a fluorine atom. Is preferred. Y is a fluorine atom, a trifluoromethoxy group, a difluoromethoxy group, a trifluoromethyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or carbon. preferably representing the alkenyloxy group having the number of atoms of 3 to 10, specifically -F, -OCF 3, -OCF 2 H , -CF 3, - (CH 2) 2 CH 3, - (CH 2) 3 CH 3, - (CH 2) 4 CH 3, -CH = CH 2, -CH = CHCH 3 (E bodies), - OCH 3, -OCH 2 CH 3, -O (CH 2) 2 CH 3, -O It is preferable to represent (CH 2 ) 3 CH 3 , —O (CH 2 ) 2 CH═CH 2 .

一般式(III)と一般式(IV)の反応は、強塩基条件下に反応させるが、塩基としてアルキル金属又は金属アミドを用いることが好ましく、具体的にはn-ブチルリチウム、sec-ブチルリチウム、tert-ブチルリチウム、リチウムジイソプロピルアミド(LDA)等が好ましく、n-ブチルリチウム又はリチウムジイソプロピルアミド(LDA)がより好ましい。   The reaction of general formula (III) and general formula (IV) is carried out under strong base conditions, but it is preferable to use an alkyl metal or metal amide as the base, specifically n-butyllithium, sec-butyllithium. Tert-butyllithium, lithium diisopropylamide (LDA) and the like are preferable, and n-butyllithium and lithium diisopropylamide (LDA) are more preferable.

溶媒としては、テトラヒドロフラン(THF)、ジエチルエーテル、ジイソプロピルエーテル、メチルt-ブチルエーテル等のエーテル系溶媒や、ベンゼン、トルエン、キシレン、メシチレン、クロロベンゼン等の芳香族系溶媒等を単独又は混合して用いることができるが、トルエンを用いることが好ましい。
反応温度は溶媒の凝固点から還流温度範囲で行うことができるが、-70℃から-40℃が好ましい。
As solvents, use ether solvents such as tetrahydrofuran (THF), diethyl ether, diisopropyl ether, methyl t-butyl ether, and aromatic solvents such as benzene, toluene, xylene, mesitylene, chlorobenzene, etc., alone or in combination. However, it is preferable to use toluene.
The reaction temperature can be in the range from the freezing point of the solvent to the reflux temperature, but is preferably -70 ° C to -40 ° C.

本願発明は、一般式(V)で表される化合物を効率的に製造することができるが、次に示す化合物の製造がより好適である。   Although this invention can manufacture efficiently the compound represented by general formula (V), manufacture of the compound shown next is more suitable.

Figure 2009007312
Figure 2009007312

(式中、Rは炭素原子数1〜10の直鎖状アルキル基を表す。)特に好ましい化合物として次に示す化合物を挙げることができる。 (In the formula, R represents a linear alkyl group having 1 to 10 carbon atoms.) Particularly preferred compounds include the following compounds.

Figure 2009007312
(式中Rは炭素原子数1〜10の直鎖状アルキル基を表す。)
Figure 2009007312
(In the formula, R represents a linear alkyl group having 1 to 10 carbon atoms.)

以下、実施例を挙げて本発明を更に詳述するが、本発明はこれらの実施例に限定されるものではない。化合物の構造は、核磁気共鳴スペクトル(NMR)により確認した。
化合物記載に下記の略号を使用する。
EXAMPLES Hereinafter, although an Example is given and this invention is further explained in full detail, this invention is not limited to these Examples. The structure of the compound was confirmed by nuclear magnetic resonance spectrum (NMR).
The following abbreviations are used in compound descriptions.

DMF :ジメチルホルムアミド
Pr :プロピル基
Bu :ブチル基
(実施例1)ジメチル(トランス-4-プロピルシクロヘキシルメチル)ホスホナートの合成
DMF: Dimethylformamide
Pr: Propyl group
Bu: butyl group (Example 1) Synthesis of dimethyl (trans-4-propylcyclohexylmethyl) phosphonate

Figure 2009007312
Figure 2009007312

t-BuOK 71 g (0.632 mol)のDMF溶液(500 mL)に対し、10℃以下が保たれる速度で亜リン酸ジメチル 73 g (0.663 mol)を滴下(約20分間)する。続いて10℃以下が保たれる速度でトランス-4-プロピルシクロヘキシルメチルブロミド100 g (0.456 mol)を滴下(約20分間)した後、反応温度を上げ、60℃で3時間攪拌後、室温まで放冷する。水500 mL、トルエン500 mLを加え有機層を分離する。水層に対しトルエン300 mLで2回抽出操作を行う。有機層をすべて合わせ、これを水250 mLで3回洗浄し、溶媒を留去する。得られた粗生成物約110 gの蒸留を行い、無色透明液体92.5 g (147-152 oC, 7 mmHg)のジメチル(トランス-4-プロピルシクロヘキシルメチル)ホスホナートを得る。
1H-NMR (400 MHz, CDCl3):0.851.30 (m, 11H), 1.501.91 (m, 8H), 3.74 (s,3H), 3.74 (s,3H).
(実施例2)(E)-トランス-4-[2-(トランス-4-プロピルシクロヘキシル)エテニル]-トランス-4'-(3,4-ジフルオロフェニル)ビシクロヘキサンの合成
To a DMF solution (500 mL) of 71 g (0.632 mol) of t-BuOK, 73 g (0.663 mol) of dimethyl phosphite is added dropwise (about 20 minutes) at such a rate that the temperature is maintained at 10 ° C. or lower. Subsequently, 100 g (0.456 mol) of trans-4-propylcyclohexylmethyl bromide was added dropwise (approximately 20 minutes) at such a rate that the temperature was maintained at 10 ° C. or lower. Allow to cool. Add 500 mL of water and 500 mL of toluene to separate the organic layer. Extract the water layer twice with 300 mL of toluene. All the organic layers are combined, washed 3 times with 250 mL of water and evaporated. About 110 g of the obtained crude product is distilled to obtain 92.5 g (147-152 ° C., 7 mmHg) of dimethyl (trans-4-propylcyclohexylmethyl) phosphonate as a colorless transparent liquid.
1 H-NMR (400 MHz, CDCl 3 ): 0.851.30 (m, 11H), 1.501.91 (m, 8H), 3.74 (s, 3H), 3.74 (s, 3H).
Example 2 Synthesis of (E) -trans-4- [2- (trans-4-propylcyclohexyl) ethenyl] -trans-4 ′-(3,4-difluorophenyl) bicyclohexane

Figure 2009007312
Figure 2009007312

ジメチル(トランス-4-プロピルシクロヘキシルメチル)ホスホナート10.6 g (42.69 mmol)のトルエン溶液(65 mL)を-55℃まで冷却し、-50℃以下が保たれる速度で1.60 M BuLiヘキサン溶液 26.5 mL (42.40 mmol)を滴下(約15分間)し、-55℃で1時間攪拌する。続いて-50℃以下が保たれる速度でシクロヘキサンカルバルデヒド誘導体 (10 g, 32.63 mmol)のトルエン溶液(65 mL)を滴下(約30分間)し、-55℃で1時間攪拌する。酢酸 30 mLを一度に加えた後、冷却を止め、室温まで反応温度を徐々に上げる。ここでTLCサンプルとして一部反応溶液を抜き取った後、加熱を開始し、還流温度まで昇温する。3時間後、TLC測定(ヘキサン/酢酸エチル=1/1)を行い、ホスホナート付加体が残っていれば加熱還流を継続する。反応終了を確認後、室温まで放冷する。1%塩酸100 mLを加え、有機層を分離する。得られた有機層を1%塩酸100 mL、飽和炭酸ナトリウム水溶液100 mLで2回、飽和食塩水50 mLで3回洗浄し、硫酸ナトリウムで乾燥する。溶媒を留去し、得られた粗生成物約16.57 gをシリカゲルカラムクロマトグラフィーで精製し、白色結晶10.51 g (E/Z=92/8)を得る(収率75%)。さらに再結晶(MEK 40 mL)を行い、白色結晶9.74 g (E/Z=99.7/0.3)を得る(収率70%)。
1H-NMR (400 MHz, CDCl3):0.851.37 (m, 28H), 1.681.90 (m, 12H), 2.362.44 (m, 1H), 5.30 (d, J = 4.8Hz, 2H),7.056.89 (m, 3H).
(実施例3)(E)- 1,2-ビス(トランス-4-プロピルシクロヘキシル)エチレンの合成
A toluene solution (65 mL) of 10.6 g (42.69 mmol) of dimethyl (trans-4-propylcyclohexylmethyl) phosphonate is cooled to −55 ° C., and 26.5 mL of a 1.60 M BuLi hexane solution at a rate that maintains -50 ° C. or lower ( 42.40 mmol) is added dropwise (about 15 minutes) and stirred at -55 ° C for 1 hour. Subsequently, a toluene solution (65 mL) of cyclohexanecarbaldehyde derivative (10 g, 32.63 mmol) is added dropwise (about 30 minutes) at such a rate that the temperature is maintained at −50 ° C. or lower, and the mixture is stirred at −55 ° C. for 1 hour. Add 30 mL of acetic acid at once, stop cooling, and gradually raise the reaction temperature to room temperature. Here, after partially removing the reaction solution as a TLC sample, heating is started and the temperature is raised to the reflux temperature. After 3 hours, TLC measurement (hexane / ethyl acetate = 1/1) is performed, and if the phosphonate adduct remains, heating under reflux is continued. After confirming the completion of the reaction, it is allowed to cool to room temperature. Add 100 mL of 1% hydrochloric acid and separate the organic layer. The obtained organic layer is washed twice with 100 mL of 1% hydrochloric acid, 100 mL of saturated aqueous sodium carbonate solution and 3 times with 50 mL of saturated brine, and dried over sodium sulfate. The solvent was distilled off, and about 16.57 g of the obtained crude product was purified by silica gel column chromatography to obtain 10.51 g (E / Z = 92/8) of white crystals (yield 75%). Further, recrystallization (MEK 40 mL) is performed to obtain 9.74 g of white crystals (E / Z = 99.7 / 0.3) (yield 70%).
1 H-NMR (400 MHz, CDCl 3 ): 0.851.37 (m, 28H), 1.681.90 (m, 12H), 2.362.44 (m, 1H), 5.30 (d, J = 4.8Hz, 2H) , 7.056.89 (m, 3H).
Example 3 Synthesis of (E) -1,2-bis (trans-4-propylcyclohexyl) ethylene

Figure 2009007312
Figure 2009007312

ジメチル(トランス-4-プロピルシクロヘキシルメチル)ホスホナート21 g (84.58 mmol)のトルエン溶液(130 mL)を-60℃まで冷却し、-60℃以下が保たれる速度で1.59 M BuLiヘキサン溶液 53 mL (84.27 mmol)を滴下(約15分間)し、-60℃で1.5時間攪拌する。続いて-55℃以下が保たれる速度でトランス-4-プロピルシクロヘキサンカルバルデヒド誘導体 (10 g, 64.83 mmol)のトルエン溶液(30 mL)を滴下(約30分間)し、-55℃で1時間攪拌する。酢酸 30 mLを一度に加えた後、冷却を止め、室温まで反応温度を上げる。ここでTLCサンプルとして一部反応溶液を抜き取った後、加熱を開始し、還流温度まで昇温する。3時間後、TLC測定(ヘキサン/酢酸エチル=1/1)を行い、ホスホナート付加体が残っていれば加熱還流を継続する。必要に応じてトルエン・酢酸を追加する。8時間後、室温まで放冷する。1%塩酸100 mLを加え、有機層を分離する。得られた有機層を1%塩酸100 mL、水100mL、飽和炭酸水素ナトリウム水溶液100 mL、10%食塩水100 mLで洗浄し、硫酸ナトリウムで乾燥する。溶媒を留去し、得られた粗生成物約28.51 gをシリカゲルカラムクロマトグラフィーで精製し、白色結晶13.29 g (E/Z=93/7)を得る。再結晶(Acetone 26 mL)を行い、白色結晶10.12 g (E/Z=99.5/0.5)を得、さらに再結晶(Acetone 40 mL)を行い、白色結晶9.75 g (E/Z=100/0)を得る(収率54%)。
(比較例1)(E)-1,2-ビス(トランス-4-プロピルシクロヘキシル)エチレンの合成
A toluene solution (130 mL) of dimethyl (trans-4-propylcyclohexylmethyl) phosphonate (21 g, 84.58 mmol) was cooled to -60 ° C, and 53 mL of a 1.59 M BuLi hexane solution was added at such a rate that the temperature was kept below -60 ° C. 84.27 mmol) is added dropwise (about 15 minutes) and stirred at -60 ° C for 1.5 hours. Subsequently, a toluene solution (30 mL) of trans-4-propylcyclohexanecarbaldehyde derivative (10 g, 64.83 mmol) was added dropwise (about 30 minutes) at a rate at which −55 ° C. or lower was maintained, and then at −55 ° C. for 1 hour. Stir. Add 30 mL of acetic acid at once, stop cooling, and raise the reaction temperature to room temperature. Here, after partially removing the reaction solution as a TLC sample, heating is started and the temperature is raised to the reflux temperature. After 3 hours, TLC measurement (hexane / ethyl acetate = 1/1) is performed, and if the phosphonate adduct remains, heating under reflux is continued. Add toluene and acetic acid as necessary. Allow to cool to room temperature after 8 hours. Add 100 mL of 1% hydrochloric acid and separate the organic layer. The obtained organic layer is washed with 100 mL of 1% hydrochloric acid, 100 mL of water, 100 mL of saturated aqueous sodium hydrogen carbonate solution and 100 mL of 10% brine, and dried over sodium sulfate. The solvent is distilled off, and about 28.51 g of the resulting crude product is purified by silica gel column chromatography to obtain 13.29 g (E / Z = 93/7) of white crystals. Recrystallize (Acetone 26 mL) to obtain white crystals 10.12 g (E / Z = 99.5 / 0.5), further recrystallize (Acetone 40 mL), white crystals 9.75 g (E / Z = 100/0) (Yield 54%).
Comparative Example 1 Synthesis of (E) -1,2-bis (trans-4-propylcyclohexyl) ethylene

Figure 2009007312
Figure 2009007312

トランス-4-プロピルシクロヘキサンカルバルデヒド(196.2g)とトランス-4-プロピルシクロヘキシルメチルトリフェニルホスホニウムブロミド(673.7g)とから1,2-ビス(トランス-4-プロピルシクロヘキシル)エチレン(313.4g)を得た。本品における(E)-1,2-ビス(トランス-4-プロピルシクロヘキシル)エチレン(以下(E)-体と呼ぶ)と(Z)-1,2-ビス(トランス-4-プロピルシクロヘキシル)エチレン(以下(Z)-体と呼ぶ)との比は5:95であり、以下本品を(Z)-体とみなして扱った。 1,2-bis (trans-4-propylcyclohexyl) ethylene (313.4 g) was obtained from trans-4-propylcyclohexanecarbaldehyde (196.2 g) and trans-4-propylcyclohexylmethyltriphenylphosphonium bromide (673.7 g). It was. (E) -1,2-bis (trans-4-propylcyclohexyl) ethylene (hereinafter referred to as (E) -isomer) and (Z) -1,2-bis (trans-4-propylcyclohexyl) ethylene in this product (Hereinafter referred to as (Z) -body) was 5:95. Hereinafter, this product was treated as (Z) -body.

ギ酸2000mLに30%過酸化水素水186.5gを加え38℃に加温し、(Z)-体の303.4gを系内が50℃以下を保つように滴下し、更に45〜50℃で9時間攪拌した。室温まで冷却し、水500mLを加え暫時攪拌後、トルエンで抽出を行った。分離した有機層を水、飽和亜硫酸水素ナトリウム水溶液、水、飽和重曹水、飽和食塩水の順に洗浄し、無水硫酸ナトリウムで乾燥後、減圧下に濃縮し、423.32gの固体状の反応混合物を得た。得られた反応混合物の全量を、室温下に激しく攪拌しながらエタノール500mLに分散させ、ここに30%水酸化ナトリウム水溶液600gを加え、2時間激しく攪拌した。次いで、氷浴上で濃塩酸400mLを反応液が40℃以下を保つように加え、系を酸性にした。白色の析出物を濾別し、これをテトラヒドロフラン(THF)1500mLとトルエン100mLの混合溶媒に溶解した。水層を分離し、有機層を飽和食塩水で中性になるまで洗浄し、無水硫酸ナトリウムで乾燥後、減圧下に濃縮し、337.6gの1,2-ビス(トランス-4-プロピルシクロヘキシル)-1,2-エタンジオールを得た。   Add 186.5 g of 30% hydrogen peroxide solution to 2000 mL of formic acid and warm to 38 ° C. Add 303.4 g of (Z) -form dropwise so that the system is kept at 50 ° C or less, and further at 45-50 ° C for 9 hours Stir. After cooling to room temperature, 500 mL of water was added and stirred for a while, followed by extraction with toluene. The separated organic layer was washed with water, saturated aqueous sodium hydrogensulfite solution, water, saturated aqueous sodium bicarbonate, and saturated brine in that order, dried over anhydrous sodium sulfate, and concentrated under reduced pressure to obtain 423.32 g of a solid reaction mixture. It was. The total amount of the obtained reaction mixture was dispersed in 500 mL of ethanol while stirring vigorously at room temperature, and 600 g of a 30% aqueous sodium hydroxide solution was added thereto, followed by vigorous stirring for 2 hours. Next, 400 mL of concentrated hydrochloric acid was added on an ice bath so that the reaction solution kept at 40 ° C. or lower, and the system was acidified. The white precipitate was filtered off and dissolved in a mixed solvent of tetrahydrofuran (THF) 1500 mL and toluene 100 mL. The aqueous layer was separated, and the organic layer was washed with saturated brine until neutral, dried over anhydrous sodium sulfate, concentrated under reduced pressure, and 337.6 g of 1,2-bis (trans-4-propylcyclohexyl) -1,2-ethanediol was obtained.

得られた1,2-ビス(トランス-4-プロピルシクロヘキシル)-1,2-エタンジオールの全量とオルトギ酸トリメチル1000mLと濃塩酸2mLを混合し、2時間還流した。冷却後、過剰のオルトギ酸トリメチルを減圧下に留去し、黄色油状の2-メトキシ-4,5-ジ(トランス-4-プロピルシクロヘキシル)-1,3-ジオキサン粗生成物400.4gを得た。
得られた粗生成物と無水酢酸1200mLを混合し、5時間還流した。室温まで冷却し、ヘキサンで抽出を行った。分離した有機層を水、飽和重曹水、飽和食塩水の順に洗浄し、無水硫酸ナトリウムで乾燥後、濃縮し、301.4gの反応混合物を得た。本反応混合物における(E)-体と(Z)-体の比は95:5であった。
The total amount of 1,2-bis (trans-4-propylcyclohexyl) -1,2-ethanediol obtained, 1000 mL of trimethyl orthoformate and 2 mL of concentrated hydrochloric acid were mixed and refluxed for 2 hours. After cooling, excess trimethyl orthoformate was distilled off under reduced pressure to obtain 400.4 g of a crude oily 2-methoxy-4,5-di (trans-4-propylcyclohexyl) -1,3-dioxane as a yellow oil. .
The obtained crude product and 1200 mL of acetic anhydride were mixed and refluxed for 5 hours. The mixture was cooled to room temperature and extracted with hexane. The separated organic layer was washed with water, saturated aqueous sodium hydrogen carbonate and saturated brine in that order, dried over anhydrous sodium sulfate, and concentrated to obtain 301.4 g of a reaction mixture. The ratio of (E) -form to (Z) -form in this reaction mixture was 95: 5.

次いでシリカゲルカラムクロマトグラフィー(溶媒:ヘキサン)を行った後、アセトンから再結晶させ、243.1gの(E)-1,2-ビス(トランス-4-プロピルシクロヘキシル)エチレンを得た。(収率69%)
本願発明の合成経路がトランス-4-プロピルシクロヘキサンカルバルデヒドから一工程であるのに対して、比較例の方法では四工程であり工程数の点で本願発明の方法に劣るものであった。
Subsequently, after silica gel column chromatography (solvent: hexane), recrystallization from acetone gave 243.1 g of (E) -1,2-bis (trans-4-propylcyclohexyl) ethylene. (Yield 69%)
Whereas the synthetic route of the present invention is one step from trans-4-propylcyclohexanecarbaldehyde, the method of the comparative example has four steps and is inferior to the method of the present invention in terms of the number of steps.

Claims (7)

一般式(III)
Figure 2009007312
(式中、R1は炭素原子数1〜10の直鎖状アルキル基を表し、R2は炭素原子数1〜10のアルキル基を表し、nは1又は2を表す。)で表されるシクロヘキシルメチルホスホナート誘導体。
Formula (III)
Figure 2009007312
(Wherein R 1 represents a linear alkyl group having 1 to 10 carbon atoms, R 2 represents an alkyl group having 1 to 10 carbon atoms, and n represents 1 or 2). Cyclohexylmethylphosphonate derivative.
一般式(I)
Figure 2009007312
(式中、R1は炭素原子数1〜10の直鎖状アルキル基を表し、nは1又は2を表し、Xは塩素、臭素、よう素、ベンゼンスルホニルオキシ基、p−トルエンスルホニルオキシ基、メタンスルホニルオキシ基又はトリフロオロメタンスルホニルオキシ基を表す。)で表される化合物に、一般式(II)
Figure 2009007312
(式中、R2は炭素原子数1〜10のアルキル基を表す。)で表される化合物を塩基条件下反応させることによる、一般式(III)
Figure 2009007312
(式中、R1は炭素原子数1〜10の直鎖状アルキル基を表し、R2は炭素原子数1〜10のアルキル基を表し、nは1又は2を表す。)で表されるシクロヘキシルメチルホスホナート誘導体の製造方法。
Formula (I)
Figure 2009007312
(In the formula, R 1 represents a linear alkyl group having 1 to 10 carbon atoms, n represents 1 or 2, X represents chlorine, bromine, iodine, benzenesulfonyloxy group, p-toluenesulfonyloxy group. Represents a methanesulfonyloxy group or a trifluoromethanesulfonyloxy group), and the compound represented by the general formula (II)
Figure 2009007312
(In the formula, R 2 represents an alkyl group having 1 to 10 carbon atoms.) By reacting the compound represented by the basic conditions,
Figure 2009007312
(Wherein R 1 represents a linear alkyl group having 1 to 10 carbon atoms, R 2 represents an alkyl group having 1 to 10 carbon atoms, and n represents 1 or 2). A method for producing a cyclohexylmethylphosphonate derivative.
一般式(III)
Figure 2009007312
(式中、R1は炭素原子数1〜10の直鎖状アルキル基を表し、R2は炭素原子数1〜10のアルキル基を表し、nは0、1又は2を表す。)で表されるシクロヘキシルメチルホスホナート誘導体を得た後、一般式(III)で表される化合物に、一般式(IV)
Figure 2009007312
(式中、o及びpはそれぞれ独立的に0、1又は2を表すが、1≦o+p≦3であり、Aはフッ素原子により置換されていても良い1,4−フェニレン基を表し、Yはフッ素原子、トリフルオロメトキシ基、ジフルオロメトキシ基、トリフルオロメチル基、炭素原子数1〜10のアルキル基、炭素原子数1〜10のアルコキシ基、炭素原子数2〜10のアルケニル基又は炭素原子数3〜10のアルケニルオキシ基を表す。)で表される化合物を強塩基条件下に反応させることによる一般式(V)
Figure 2009007312
(式中、nは0、1又は2を表し、o及びpはそれぞれ独立的に0、1又は2を表すが、1≦o+p≦3であり、Aはフッ素原子により置換されていても良い1,4−フェニレン基を表し、Yはフッ素原子、トリフルオロメトキシ基、ジフルオロメトキシ基、トリフルオロメチル基、炭素原子数1〜10のアルキル基、炭素原子数1〜10のアルコキシ基、炭素原子数2〜10のアルケニル基又は炭素原子数3〜10のアルケニルオキシ基を表す。)で表される化合物の製造方法。
General formula (III)
Figure 2009007312
(Wherein R 1 represents a linear alkyl group having 1 to 10 carbon atoms, R 2 represents an alkyl group having 1 to 10 carbon atoms, and n represents 0, 1 or 2). After obtaining the cyclohexylmethylphosphonate derivative, the compound represented by the general formula (III) is converted into the general formula (IV)
Figure 2009007312
(In the formula, o and p each independently represent 0, 1 or 2, but 1 ≦ o + p ≦ 3, A represents a 1,4-phenylene group optionally substituted by a fluorine atom, Y Is a fluorine atom, trifluoromethoxy group, difluoromethoxy group, trifluoromethyl group, alkyl group having 1 to 10 carbon atoms, alkoxy group having 1 to 10 carbon atoms, alkenyl group having 2 to 10 carbon atoms, or carbon atom (Representing an alkenyloxy group of formula 3 to 10)) by reacting a compound represented by the formula (V) under strong base conditions
Figure 2009007312
(In the formula, n represents 0, 1 or 2, and o and p each independently represent 0, 1 or 2, but 1 ≦ o + p ≦ 3, and A may be substituted by a fluorine atom. Y represents a fluorine atom, a trifluoromethoxy group, a difluoromethoxy group, a trifluoromethyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a carbon atom Represents an alkenyl group having 2 to 10 carbon atoms or an alkenyloxy group having 3 to 10 carbon atoms).
一般式(II)で表される化合物の反応時に、塩基として金属アルコキシドを用いる請求項2記載の製造方法。 The production method according to claim 2, wherein a metal alkoxide is used as a base during the reaction of the compound represented by the general formula (II). 一般式(III)で表される化合物の反応時に、塩基としてアルキル金属を用いる請求項3記載の製造方法。 The production method according to claim 3, wherein an alkyl metal is used as a base during the reaction of the compound represented by formula (III). 塩基としてリチウムアミドを用いる請求項5記載の製造方法。 6. The production method according to claim 5, wherein lithium amide is used as the base. Aが1,4−フェニレン基、3−フルオロ−1,4−フェニレン基、3,5−ジフルオロ−1,4−フェニレン基又は2,3−ジフルオロ−1,4−フェニレン基を表す請求項3記載の製造方法。 A represents a 1,4-phenylene group, a 3-fluoro-1,4-phenylene group, a 3,5-difluoro-1,4-phenylene group, or a 2,3-difluoro-1,4-phenylene group. The manufacturing method as described.
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