JP2009001912A5 - - Google Patents
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- Publication number
- JP2009001912A5 JP2009001912A5 JP2008229489A JP2008229489A JP2009001912A5 JP 2009001912 A5 JP2009001912 A5 JP 2009001912A5 JP 2008229489 A JP2008229489 A JP 2008229489A JP 2008229489 A JP2008229489 A JP 2008229489A JP 2009001912 A5 JP2009001912 A5 JP 2009001912A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- diameter
- distance
- intersection point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Description
本発明の第１は、１枚の基板がセットされる回転可能な第１部材と、ターゲットを取り付け可能で、該１枚の基板に対して１基設けられたスパッタリングカソードと、を備え、
前記基板の直径をｄ、前記ターゲットの直径をＤ、前記基板の法線に対する前記ターゲットの中心軸線のなす角度をθ、前記ターゲットの中心軸線と前記基板の表面を含む平面との交点Ｐと基板の回転軸線との距離をＦ、前記交点Ｐと前記ターゲットの中心との距離をＬとした時に、以下の条件を満たすように構成されていることを特徴とするスパッタリング装置により、前記従来の問題点を解決し、ターゲットの径を基板と同等以下にしても、均一な膜厚及び膜質の膜を生成できるようにしたものである。
A first aspect of the present invention includes a rotatable first member on which a single substrate is set, and a sputtering cathode to which a target can be attached and one set is provided for the single substrate,
The diameter of the substrate is d, the diameter of the target is D, the angle formed by the central axis of the target with respect to the normal of the substrate is θ, the intersection point P between the central axis of the target and the plane including the surface of the substrate, and the substrate of F the distance between the axis of rotation, the distance between the center of the said intersection point P target when is L, the sputtering apparatus characterized by being configured to satisfy the condition of following, the prior art the problem was solved, and even if the size of the target to equal to or less than the substrate is to be calculated and to be able to generate a uniform thickness and quality of film.
Claims (1)
前記基板の直径をｄ、前記ターゲットの直径をＤ、前記基板の法線に対する前記ターゲットの中心軸線のなす角度をθ、前記ターゲットの中心軸線と前記基板の表面を含む平面との交点Ｐと基板の回転軸線との距離をＦ、前記交点Ｐと前記ターゲットの中心との距離をＬとした時に、以下の条件を満たすように構成されていることを特徴とするスパッタリング装置。
ｄ≧Ｄ
１５°≦θ≦４５°
５０ｍｍ≦Ｆ≦４００ｍｍ
５０ｍｍ≦Ｌ≦８００ｍｍ A rotatable first member on which a single substrate is set, and a sputtering cathode to which a target can be attached and one set is provided for the single substrate;
The diameter of the substrate is d, the diameter of the target is D, the angle formed by the central axis of the target with respect to the normal of the substrate is θ, the intersection point P between the central axis of the target and the plane including the surface of the substrate, and the substrate of the distance between the axis of rotation F, the distance between the center of the said intersection point P target when is L, sputtering apparatus characterized by being configured to satisfy the condition below.
d ≧ D
15 ° ≦ θ ≦ 45 °
50mm ≦ F ≦ 400mm
50mm ≦ L ≦ 800mm
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008229489A JP4740299B2 (en) | 1999-01-12 | 2008-09-08 | Sputtering method and apparatus, and electronic component manufacturing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999005084 | 1999-01-12 | ||
| JP508499 | 1999-01-12 | ||
| JP2008229489A JP4740299B2 (en) | 1999-01-12 | 2008-09-08 | Sputtering method and apparatus, and electronic component manufacturing method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00800099A Division JP4223614B2 (en) | 1999-01-12 | 1999-01-14 | Sputtering method and apparatus, and electronic component manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009001912A JP2009001912A (en) | 2009-01-08 |
| JP2009001912A5 true JP2009001912A5 (en) | 2010-12-16 |
| JP4740299B2 JP4740299B2 (en) | 2011-08-03 |
Family
ID=40232444
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008229489A Expired - Lifetime JP4740299B2 (en) | 1999-01-12 | 2008-09-08 | Sputtering method and apparatus, and electronic component manufacturing method |
| JP2008229523A Expired - Lifetime JP4740300B2 (en) | 1999-01-12 | 2008-09-08 | Sputtering method and apparatus, and electronic component manufacturing method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008229523A Expired - Lifetime JP4740300B2 (en) | 1999-01-12 | 2008-09-08 | Sputtering method and apparatus, and electronic component manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP4740299B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5442367B2 (en) * | 2009-09-11 | 2014-03-12 | 株式会社アルバック | Thin film forming method and thin film forming apparatus |
| JPWO2013179544A1 (en) * | 2012-05-31 | 2016-01-18 | 東京エレクトロン株式会社 | Magnetron sputtering equipment |
| JP6299575B2 (en) * | 2014-12-05 | 2018-03-28 | 信越化学工業株式会社 | Sputtering apparatus and sputtering method |
| JP7384735B2 (en) | 2020-04-07 | 2023-11-21 | 株式会社アルバック | sputtering equipment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01270321A (en) * | 1988-04-22 | 1989-10-27 | Anelva Corp | Sputtering device |
| JPH02111878A (en) * | 1988-10-20 | 1990-04-24 | Fuji Photo Film Co Ltd | Sputtering device |
| JPH04224674A (en) * | 1990-12-26 | 1992-08-13 | Hitachi Metals Ltd | Device for metallizing ceramic |
-
2008
- 2008-09-08 JP JP2008229489A patent/JP4740299B2/en not_active Expired - Lifetime
- 2008-09-08 JP JP2008229523A patent/JP4740300B2/en not_active Expired - Lifetime
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