JP2008526683A5 - - Google Patents

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Publication number
JP2008526683A5
JP2008526683A5 JP2007551339A JP2007551339A JP2008526683A5 JP 2008526683 A5 JP2008526683 A5 JP 2008526683A5 JP 2007551339 A JP2007551339 A JP 2007551339A JP 2007551339 A JP2007551339 A JP 2007551339A JP 2008526683 A5 JP2008526683 A5 JP 2008526683A5
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catalyst
temperature
particle size
eutectic point
precursor gas
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JP2007551339A
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JP5102633B2 (ja
JP2008526683A (ja
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Priority claimed from US11/329,499 external-priority patent/US7871591B2/en
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JP2007551339A 2005-01-11 2006-01-11 長いカーボン単層ナノチューブを成長させるための方法 Expired - Fee Related JP5102633B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US64340605P 2005-01-11 2005-01-11
US60/643,406 2005-01-11
US11/329,499 2006-01-10
US11/329,499 US7871591B2 (en) 2005-01-11 2006-01-10 Methods for growing long carbon single-walled nanotubes
PCT/US2006/000929 WO2006091277A2 (en) 2005-01-11 2006-01-11 Methods for growing long carbon single-walled nanotubes

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JP2008526683A JP2008526683A (ja) 2008-07-24
JP2008526683A5 true JP2008526683A5 (enExample) 2011-05-19
JP5102633B2 JP5102633B2 (ja) 2012-12-19

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JP2007551339A Expired - Fee Related JP5102633B2 (ja) 2005-01-11 2006-01-11 長いカーボン単層ナノチューブを成長させるための方法

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US (1) US7871591B2 (enExample)
JP (1) JP5102633B2 (enExample)
WO (1) WO2006091277A2 (enExample)

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