JP2008526062A - 全体的に分離したカラーゾーンを有するイメージセンサー - Google Patents
全体的に分離したカラーゾーンを有するイメージセンサー Download PDFInfo
- Publication number
- JP2008526062A JP2008526062A JP2007547434A JP2007547434A JP2008526062A JP 2008526062 A JP2008526062 A JP 2008526062A JP 2007547434 A JP2007547434 A JP 2007547434A JP 2007547434 A JP2007547434 A JP 2007547434A JP 2008526062 A JP2008526062 A JP 2008526062A
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- matrix
- image
- matrices
- optical
- image sensor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 239000012634 fragment Substances 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000000429 assembly Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0413961A FR2880194B1 (fr) | 2004-12-24 | 2004-12-24 | Capteur d'image a zones de couleur globalement separees |
PCT/EP2005/056376 WO2006069886A1 (fr) | 2004-12-24 | 2005-12-01 | Capteur d'image a zones de couleur globalement separees |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008526062A true JP2008526062A (ja) | 2008-07-17 |
Family
ID=34955061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007547434A Pending JP2008526062A (ja) | 2004-12-24 | 2005-12-01 | 全体的に分離したカラーゾーンを有するイメージセンサー |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1829109A1 (fr) |
JP (1) | JP2008526062A (fr) |
CN (1) | CN101088163A (fr) |
CA (1) | CA2590667A1 (fr) |
FR (1) | FR2880194B1 (fr) |
WO (1) | WO2006069886A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101990098A (zh) * | 2009-07-31 | 2011-03-23 | 索尼公司 | 图像处理设备和方法 |
JP2012235137A (ja) * | 2006-12-22 | 2012-11-29 | Intellectual Venturesii Llc | フローティングベース読み取り概念を有するcmosイメージセンサ |
US9055181B2 (en) | 2011-07-15 | 2015-06-09 | Kabushiki Kaisha Toshiba | Solid-state imaging device, image processing apparatus, and a camera module having an image synthesizer configured to synthesize color information |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201400917VA (en) * | 2011-10-06 | 2014-07-30 | Heptagon Micro Optics Pte Ltd | Method for wafer-level manufacturing of objects and corresponding semi-finished products |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4777496B2 (ja) * | 2000-02-10 | 2011-09-21 | 富士フイルム株式会社 | 固体撮像素子 |
JP4518616B2 (ja) * | 2000-04-13 | 2010-08-04 | ソニー株式会社 | 固体撮像装置およびその駆動方法並びにカメラシステム |
FR2817106B1 (fr) * | 2000-11-17 | 2003-03-07 | Trixell Sas | Dispositif photosensible et procede de commande du dispositif photosensible |
FR2819941B1 (fr) * | 2001-01-25 | 2003-06-20 | Get Int | Element photoelectrique a tres grande dynamique de fonctionnement |
FR2829289B1 (fr) * | 2001-08-31 | 2004-11-19 | Atmel Grenoble Sa | Capteur d'image couleur a colorimetrie amelioree et procede de fabrication |
-
2004
- 2004-12-24 FR FR0413961A patent/FR2880194B1/fr not_active Expired - Fee Related
-
2005
- 2005-12-01 WO PCT/EP2005/056376 patent/WO2006069886A1/fr not_active Application Discontinuation
- 2005-12-01 JP JP2007547434A patent/JP2008526062A/ja active Pending
- 2005-12-01 EP EP05823548A patent/EP1829109A1/fr not_active Withdrawn
- 2005-12-01 CN CNA2005800443244A patent/CN101088163A/zh active Pending
- 2005-12-01 CA CA002590667A patent/CA2590667A1/fr not_active Abandoned
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012235137A (ja) * | 2006-12-22 | 2012-11-29 | Intellectual Venturesii Llc | フローティングベース読み取り概念を有するcmosイメージセンサ |
US8723990B2 (en) | 2006-12-22 | 2014-05-13 | Intellectual Ventures Ii Llc | Image pixel employing floating base readout concept, and image sensor and image sensor array including the image pixel |
CN101990098A (zh) * | 2009-07-31 | 2011-03-23 | 索尼公司 | 图像处理设备和方法 |
US9055181B2 (en) | 2011-07-15 | 2015-06-09 | Kabushiki Kaisha Toshiba | Solid-state imaging device, image processing apparatus, and a camera module having an image synthesizer configured to synthesize color information |
Also Published As
Publication number | Publication date |
---|---|
WO2006069886A1 (fr) | 2006-07-06 |
CN101088163A (zh) | 2007-12-12 |
EP1829109A1 (fr) | 2007-09-05 |
CA2590667A1 (fr) | 2006-07-06 |
FR2880194B1 (fr) | 2007-06-01 |
FR2880194A1 (fr) | 2006-06-30 |
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