JP2008507840A5 - - Google Patents
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- JP2008507840A5 JP2008507840A5 JP2007522099A JP2007522099A JP2008507840A5 JP 2008507840 A5 JP2008507840 A5 JP 2008507840A5 JP 2007522099 A JP2007522099 A JP 2007522099A JP 2007522099 A JP2007522099 A JP 2007522099A JP 2008507840 A5 JP2008507840 A5 JP 2008507840A5
- Authority
- JP
- Japan
- Prior art keywords
- getter
- reaction
- volatile
- compounds
- exposed surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000001875 compounds Chemical class 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000002441 reversible Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Description
ゲッタ表面はビーム経路から離れて備えられているため、それらの表面は、ＥＵＶ放射によってもあまりひどく加熱されない。ゲッタ表面への汚染物質の永久的結合は、この手段により容易に促進することができる。
反応、それ故、結合過程が、それぞれの場合に、ゲッタ表面において又はゲッタ物質により起こる。この反応においては、汚染物質と反応ガス２９とが化合した揮発性化合物は、汚染物質２３とゲッタ物質３４と可能性のある反応ガス２９とが化合した不揮発性化合物に変化することが可能である。ゲッタ物質は、その不揮発性物質が前に存在した揮発性化合物３１より安定であるように選択される。問題のゲッタ反応は、それ故、自発的に可逆的ではなく、その安定な不揮発性物質は、凝縮された形で影となっているその表面１４に留まる。
反応機構が、何れの深い熟慮を伴わないで想定されている場合、ゲッタガス３４がそこで進むとき、クリーンにされるべき表面１３でまた、起こる上記のゲッタ表面の可能性から外れることは先ず、可能でない。このことは残骸物質の移送を抑制し、又は妨げることさえある。また、ゲッタガス３４は堆積物質と直接、反応し、安定な不揮発性化合物を形成することが可能であり、それ故、堆積物２３と反応ガス２９が化合した不揮発性化合物の形成は起こらない。
熱的分離のための手段、例えば、エアギャップが、影となっている表面３２と及び暴露表面２０との間に備えられることは有利である。暴露表面は、入射放射のみにより容易に加熱される。この場合、表面の光学特性が加熱により変化することに留意する必要がある。従って、良好な熱伝導性を有する材料が少なくとも暴露表面のために用いられることは、故に、暴露表面における温度変動が小さいことは、有利である。暴露表面における所望の温度についてのデザインにおいて考慮がなされる必要がある。
単体の状態か又は混合物のどちらかとして、クリーニングガスとして適切であるガスは、ハロゲン、水素又はハロゲン含有化合物若しくは水素含有化合物である。揮発性化合物は、それ故、例えば、金属ハロゲン化物又は金属−水素である。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04103506.4 | 2004-07-22 | ||
| EP04103506 | 2004-07-22 | ||
| PCT/IB2005/052379 WO2006011105A2 (en) | 2004-07-22 | 2005-07-18 | Optical system having a cleaning arrangement |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008507840A JP2008507840A (ja) | 2008-03-13 |
| JP2008507840A5 true JP2008507840A5 (ja) | 2012-11-01 |
| JP5122952B2 JP5122952B2 (ja) | 2013-01-16 |
Family
ID=34993296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007522099A Active JP5122952B2 (ja) | 2004-07-22 | 2005-07-18 | クリーニング構成を有する光学システム |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7732789B2 (ja) |
| EP (1) | EP1774406B1 (ja) |
| JP (1) | JP5122952B2 (ja) |
| CN (1) | CN100573334C (ja) |
| AT (1) | ATE555422T1 (ja) |
| TW (1) | TWI410751B (ja) |
| WO (1) | WO2006011105A2 (ja) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7355672B2 (en) * | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
| US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
| US8076655B2 (en) | 2005-06-21 | 2011-12-13 | Koninklijke Philips Electronics N.V. | Method of cleaning optical surfaces of an irradiation unit in a two-step process |
| US8097092B2 (en) | 2005-06-21 | 2012-01-17 | Kninklijke Philips Electronics N.V. | Method of cleaning and after treatment of optical surfaces in an irradiation unit |
| US7462850B2 (en) * | 2005-12-08 | 2008-12-09 | Asml Netherlands B.V. | Radical cleaning arrangement for a lithographic apparatus |
| US7473908B2 (en) | 2006-07-14 | 2009-01-06 | Asml Netherlands B.V. | Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface |
| EP2064005B1 (en) * | 2006-09-04 | 2016-01-06 | Philips Intellectual Property & Standards GmbH | Method and unit for cleaning a surface region covered with contaminant or undesirable material |
| US7671348B2 (en) | 2007-06-26 | 2010-03-02 | Advanced Micro Devices, Inc. | Hydrocarbon getter for lithographic exposure tools |
| JP4973425B2 (ja) * | 2007-10-03 | 2012-07-11 | ウシオ電機株式会社 | 極端紫外光光源装置における集光光学手段のクリーニング方法及び極端紫外光光源装置 |
| ITMI20080282A1 (it) * | 2008-02-22 | 2009-08-23 | Getters Spa | Apparato per litografia con radiazione nell'uv estremo con un elemento assorbitore di idrocarburi comprendente un materiale getter |
| NL2003152A1 (nl) | 2008-08-14 | 2010-02-16 | Asml Netherlands Bv | Radiation source, lithographic apparatus and device manufacturing method. |
| JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
| JP5709546B2 (ja) * | 2011-01-19 | 2015-04-30 | キヤノン株式会社 | エネルギービーム描画装置及びデバイス製造方法 |
| US8790603B2 (en) | 2012-06-27 | 2014-07-29 | Kla-Tencor Corporation | Apparatus for purifying a controlled-pressure environment |
| CN103230901B (zh) * | 2013-04-28 | 2015-02-04 | 哈尔滨工业大学 | 一种保持激光传输光学系统中洁净度的冲扫装置和方法 |
| CN103230900B (zh) * | 2013-04-28 | 2015-03-04 | 哈尔滨工业大学 | 一种用于保持大口径光学元件表面洁净的冲扫装置 |
| US8901523B1 (en) * | 2013-09-04 | 2014-12-02 | Asml Netherlands B.V. | Apparatus for protecting EUV optical elements |
| US9560730B2 (en) * | 2013-09-09 | 2017-01-31 | Asml Netherlands B.V. | Transport system for an extreme ultraviolet light source |
| US9776218B2 (en) * | 2015-08-06 | 2017-10-03 | Asml Netherlands B.V. | Controlled fluid flow for cleaning an optical element |
| KR102655267B1 (ko) * | 2017-06-26 | 2024-04-08 | 에이에스엠엘 네델란즈 비.브이. | 냉각 장치 및 냉각 장치용 플라즈마-세정 스테이션 |
| DE102021213613A1 (de) | 2021-12-01 | 2022-09-15 | Carl Zeiss Smt Gmbh | Verfahren zum Aufbringen eines Getter-Materials auf eine Oberfläche eines Bauteils für ein Lithographiesystem |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6452199B1 (en) * | 1997-05-12 | 2002-09-17 | Cymer, Inc. | Plasma focus high energy photon source with blast shield |
| JP2000088999A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | Ｘ線装置 |
| EP1182510B1 (en) | 2000-08-25 | 2006-04-12 | ASML Netherlands B.V. | Lithographic projection apparatus |
| US6781673B2 (en) * | 2000-08-25 | 2004-08-24 | Asml Netherlands B.V. | Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby |
| DE10061248B4 (de) | 2000-12-09 | 2004-02-26 | Carl Zeiss | Verfahren und Vorrichtung zur In-situ-Dekontamination eines EUV-Lithographiegerätes |
| US6772776B2 (en) * | 2001-09-18 | 2004-08-10 | Euv Llc | Apparatus for in situ cleaning of carbon contaminated surfaces |
| US6923625B2 (en) * | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
| US6968850B2 (en) | 2002-07-15 | 2005-11-29 | Intel Corporation | In-situ cleaning of light source collector optics |
| JP4105616B2 (ja) * | 2002-08-15 | 2008-06-25 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフ投影装置およびこの装置用の反射鏡アセンブリ |
| SG129259A1 (en) * | 2002-10-03 | 2007-02-26 | Asml Netherlands Bv | Radiation source lithographic apparatus, and device manufacturing method |
| EP1406124A1 (en) | 2002-10-03 | 2004-04-07 | ASML Netherlands B.V. | Radiation source, lithographic apparatus, and device manufacturing method |
| DE60323927D1 (de) * | 2002-12-13 | 2008-11-20 | Asml Netherlands Bv | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
| EP1429189B1 (en) | 2002-12-13 | 2008-10-08 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101095394B1 (ko) | 2003-05-22 | 2011-12-16 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 하나 이상의 광학 컴포넌트를 클리닝하기 위한 방법 및장치 |
| EP1531365A1 (en) * | 2003-11-11 | 2005-05-18 | ASML Netherlands B.V. | Lithographic apparatus with contamination suppression |
| US7567379B2 (en) * | 2004-04-29 | 2009-07-28 | Intel Corporation | Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system |
| US7355672B2 (en) * | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
-
2005
- 2005-07-18 JP JP2007522099A patent/JP5122952B2/ja active Active
- 2005-07-18 EP EP05758710A patent/EP1774406B1/en active Active
- 2005-07-18 US US11/572,238 patent/US7732789B2/en active Active
- 2005-07-18 WO PCT/IB2005/052379 patent/WO2006011105A2/en active Application Filing
- 2005-07-18 AT AT05758710T patent/ATE555422T1/de active
- 2005-07-18 CN CNB2005800248241A patent/CN100573334C/zh active Active
- 2005-07-19 TW TW094124351A patent/TWI410751B/zh active
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