JP2008311511A - Bonding device, and cleaning method of its tool - Google Patents

Bonding device, and cleaning method of its tool Download PDF

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JP2008311511A
JP2008311511A JP2007159110A JP2007159110A JP2008311511A JP 2008311511 A JP2008311511 A JP 2008311511A JP 2007159110 A JP2007159110 A JP 2007159110A JP 2007159110 A JP2007159110 A JP 2007159110A JP 2008311511 A JP2008311511 A JP 2008311511A
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bonding
tool
cleaning
bulk material
base material
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Ren Yamamoto
錬 山本
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Toyota Motor Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To reduce a cleaning work time by solving a problem wherein, in a conventional bonding device, ultrasonic cleaning is executed by installing a cleaning bath on a bonding stage, and immersing a tool in a cleaning fluid in the cleaning bath, but it takes a certain length of time to do it. <P>SOLUTION: This bonding device includes: a bonding stage 20 for mounting a semiconductor element 52 thereon; a tool 13 ultrasonically jointing an aluminum tape to the semiconductor element by bringing the aluminum tape 15 into press contact with the semiconductor element and applying ultrasonic vibration to the aluminum tape; a bonding head 11 having the tool mounted thereto, provided with an ultrasonic oscillator 12, and relatively movable with respect to the bonding stage 20; and a bulk material 30 installed in a bonding area allowing the bonding head to be moved therein, and allowing a bonding operation by the tool. In the bonding device, the bulk material is formed with a member having a hardness higher than that of the aluminum tape, and the tool is composed to be able to execute a bonding operation to the bulk material. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、被接合物に対して接合母材を超音波接合するボンディング装置およびそのツールの洗浄方法に関する。   The present invention relates to a bonding apparatus that ultrasonically bonds a bonding base material to an object to be bonded and a cleaning method for the tool.

被接合物に対して接合母材を超音波接合するボンディング装置としては、例えば、被接合物となるＩＧＢＴ素子等のパワー半導体素子と、該パワー半導体素子が実装される基板の回路配線や、該基板が収納される筐体側の端子部等とを、接合母材となるアルミワイヤ等で接合する際に用いられるものがある。
超音波接合される接合母材は、前述のアルミワイヤの他、該接合母材に流れる電流の大電流化の要請に答えるべく断面積の大きなテープ状（リボン状）に形成されたアルミが用いられることもある。 As a bonding apparatus for ultrasonically bonding a bonding base material to an object to be bonded, for example, a power semiconductor element such as an IGBT element to be bonded, circuit wiring of a substrate on which the power semiconductor element is mounted, There are some which are used when joining a terminal portion on a housing side in which a substrate is stored with an aluminum wire or the like as a joining base material.
As the bonding base material to be ultrasonically bonded, aluminum formed in a tape shape (ribbon shape) having a large cross-sectional area is used in addition to the above-described aluminum wire in order to meet the demand for a large current flowing in the bonding base material. Sometimes.

前記ボンディング装置は、例えば図８に示すように、被接合物となる半導体素子１５１を備えた半導体装置１５０が載置されるボンディングステージ１２０と、前記接合母材となるアルミテープ１１５を前記半導体素子１５１に対して圧接するとともに、該アルミテープ１１５に超音波振動を付与して、アルミテープ１１５を半導体素子１５１に超音波接合するためのツール１１３と、前記ツール１１３が装着され、超音波発振器１１２を有し、前記ボンディングステージ１２０に対して略水平方向および略垂直方向に相対的に移動可能であるボンディングヘッド１１１とを備えている。
前記ボンディングヘッド１１１、超音発振器１１２、およびツール１１３等により全体的にヘッド部１１０を構成している。
また、前記ツール１１３はアルミテープ１１５よりも高硬度の金属部材にて構成されている。
さらに、前記半導体装置１５０は、基板１５２に実装された前記半導体素子１５１を筐体１５３に収納して構成されている。 For example, as shown in FIG. 8, the bonding apparatus includes a bonding stage 120 on which a semiconductor device 150 including a semiconductor element 151 to be bonded is placed, and an aluminum tape 115 to be the bonding base material. 151, a tool 113 for ultrasonically bonding the aluminum tape 115 to the semiconductor element 151 by applying ultrasonic vibration to the aluminum tape 115, and the tool 113, and the ultrasonic oscillator 112. And a bonding head 111 that is movable relative to the bonding stage 120 in a substantially horizontal direction and a substantially vertical direction.
The bonding head 111, the supersonic oscillator 112, the tool 113, and the like constitute the head portion 110 as a whole.
The tool 113 is made of a metal member having a hardness higher than that of the aluminum tape 115.
Further, the semiconductor device 150 is configured by housing the semiconductor element 151 mounted on the substrate 152 in a housing 153.

このように構成されるボンディング装置により、アルミテープ１１５を半導体素子１５１に超音波接合する場合には、図９に示すように、前記ツール１１３の下端面に構成される接合面１１３ａを前記半導体素子１５１上に載置されるアルミテープ１１５に圧接させた状態で、前記超音波発振器１１２にて発振させた超音波を、該ツール１１３を通じてアルミテープ１１５へ付与して振動させ、該アルミテープ１１５と半導体素子１５１との間で合金層を生成させることで両者を接合するようにしている。   When the aluminum tape 115 is ultrasonically bonded to the semiconductor element 151 by the bonding apparatus configured as described above, the bonding surface 113a formed on the lower end surface of the tool 113 is used as the semiconductor element as shown in FIG. The ultrasonic wave oscillated by the ultrasonic oscillator 112 is applied to the aluminum tape 115 through the tool 113 in a state where the aluminum tape 115 is placed in pressure contact with the aluminum tape 115 and vibrated. Both are joined by generating an alloy layer with the semiconductor element 151.

図１０に示すように、前述のごとくアルミテープ１１５に超音波振動を付与するツール１１３の接合面１１３ａは、該接合面１１３ａとアルミテープ１１５との間の摩擦係数を高めるために、多数の溝部１１３ｂが形成された凹凸形状となっているが、
接合回数を重ねていくに従って、前期接合面１１３ａの溝部１１３ｂにアルミテープ１１５に起因するアルミカスが付着してくる。
これは、前記ツール１１３を構成する金属部材の硬度がアルミテープ１１５の硬度よりも高いため、該ツール１１３によりアルミテープ１１５に加圧・振動を付与して前記半導体素子１５１との接合を行う際に、アルミテープ１１５の表面がツール１１３における接合面１１３ａの凹凸により削り取られて、該接合面１１３ａの溝部１１３ｂに付着することによる。 As shown in FIG. 10, the joining surface 113a of the tool 113 for applying ultrasonic vibration to the aluminum tape 115 as described above has a large number of groove portions in order to increase the coefficient of friction between the joining surface 113a and the aluminum tape 115. 113b is an uneven shape formed,
As the number of times of joining increases, the aluminum residue resulting from the aluminum tape 115 adheres to the groove 113b of the previous joining surface 113a.
This is because the hardness of the metal member constituting the tool 113 is higher than the hardness of the aluminum tape 115, so that the tool 113 applies pressure and vibration to the aluminum tape 115 to join the semiconductor element 151. Further, the surface of the aluminum tape 115 is scraped off by the unevenness of the joint surface 113a of the tool 113 and adheres to the groove 113b of the joint surface 113a.

このように、ツール１１３の接合面１１３ａにアルミカスが付着した状態となると、該ツール１１３により超音波接合したアルミテープ１１５と半導体素子１５１との接合品質が低下したり、接合品質のばらつきが大きくなったりする恐れがあるため、前記接合面１１３ａを定期的に洗浄して付着したアルミカスを除去する必要がある。
従って、図１１に示すように、前記接合面１１３ａにアルミカスが付着すると、前記ツール１１３を前記ボンディングヘッド１１１から取り外した後に、該ツール１１３を洗浄容器１４０内に貯溜された洗浄液に浸漬し、ツール１１３が浸漬された洗浄容器１４０を超音波洗浄器１４１にセットしたうえで、該超音波洗浄器１４１による洗浄を行い、該接合面１１３ａに付着したアルミカスを除去するようにしていた。 As described above, when the aluminum residue is attached to the bonding surface 113a of the tool 113, the bonding quality between the aluminum tape 115 ultrasonically bonded by the tool 113 and the semiconductor element 151 is deteriorated, or the variation in bonding quality is increased. Therefore, it is necessary to periodically clean the bonding surface 113a to remove the adhered aluminum residue.
Accordingly, as shown in FIG. 11, when an aluminum residue adheres to the bonding surface 113 a, the tool 113 is removed from the bonding head 111, and then the tool 113 is immersed in a cleaning solution stored in a cleaning container 140. The cleaning container 140 in which the 113 is immersed is set in the ultrasonic cleaner 141 and then cleaned by the ultrasonic cleaner 141 to remove the aluminum residue adhering to the bonding surface 113a.

しかし、前述のように、超音波洗浄器１４１を用いてツール１１３の洗浄を行うように構成した場合、半導体素子１５１に対する接合動作を行っているボンディング装置の稼動を一旦中断した上で、前記ツール１１３をボンディングヘッド１１１から取り外す必要があるなど、洗浄作業が煩雑で多くの時間を要していた。
つまり、洗浄作業は、次に示すような多くのステップを有するフローにて行われていた。
図１２に示すように、まず、ツール１１３にアルミカスが付着した場合には（Ｓ１０１）、ツール１１３をボンディングヘッド１１１から取り外すとともに（Ｓ１０２）、ツール１１３を洗浄するための洗浄容器１４０および超音波洗浄器１４１の準備を行う（１０３）。
前記準備が完了したら、ツール１１３の先端面１１３ａを洗浄容器１４０内の洗浄液に浸漬して、超音波洗浄器１４１による洗浄を実施する（Ｓ１０４）。
洗浄完了後、洗浄済みのツール１１３をボンディングヘッド１１１に取り付ける（Ｓ１０５）。
また、ツール１１３は、その取り付け位置等に高精度が要求されるため、取り付けたツール１１３の位置調整等を行い（Ｓ１０６）、洗浄後のツール１１３による超音波接合の品質を確認して（Ｓ１０７）、品質が良好であることを確認した後にボンディング装置の設備の稼動を再開する（Ｓ１０８）。
このように、多くのステップを経て洗浄作業が行われるため、半導体装置１１０の生産ラインにおいては、大きな時間のロスが生じていた。 However, as described above, when the tool 113 is cleaned using the ultrasonic cleaner 141, the operation of the bonding apparatus that performs the bonding operation with respect to the semiconductor element 151 is interrupted, and then the tool The cleaning operation is cumbersome and requires a lot of time, such as the need to remove 113 from the bonding head 111.
That is, the cleaning operation has been performed in a flow having many steps as shown below.
As shown in FIG. 12, when an aluminum residue adheres to the tool 113 (S101), the tool 113 is removed from the bonding head 111 (S102), and the cleaning container 140 for cleaning the tool 113 and ultrasonic cleaning are used. The device 141 is prepared (103).
When the preparation is completed, the tip surface 113a of the tool 113 is immersed in the cleaning liquid in the cleaning container 140, and cleaning is performed by the ultrasonic cleaner 141 (S104).
After the cleaning is completed, the cleaned tool 113 is attached to the bonding head 111 (S105).
Further, since the tool 113 is required to have a high accuracy in its attachment position and the like, the position of the attached tool 113 is adjusted (S106), and the quality of ultrasonic bonding by the tool 113 after cleaning is confirmed (S107). ) After confirming that the quality is good, the operation of the equipment of the bonding apparatus is resumed (S108).
As described above, since the cleaning operation is performed through many steps, a large time loss occurs in the production line of the semiconductor device 110.

そこで、従来においては、洗浄作業にかかる時間を短縮するべく、次のように洗浄を行うように構成したボンディング装置が考案されている。
例えば、特許文献１に示すボンディング装置では、超音波接合の対象となる半導体素子が載置されるボンディングステージに、ツール洗浄用の洗浄液が貯溜された洗浄槽を設置し、ツールが装着された状態のボンディングヘッドを前記洗浄槽の設置箇所へ移動させて、ボンディングヘッドに装着されたままの状態のツールを洗浄液に浸漬して洗浄を行うように構成している。
このように構成することで、前記ツールのボンディングヘッドからの取り外し、および取り付けといった作業を行うことなく洗浄作業を完了させることができるため、洗浄作業時間を短縮することが可能となっている。
特開平５−２１１１９５号公報 Therefore, conventionally, in order to shorten the time required for the cleaning operation, a bonding apparatus configured to perform cleaning as described below has been devised.
For example, in the bonding apparatus shown in Patent Document 1, a cleaning tank storing a cleaning liquid for cleaning a tool is installed on a bonding stage on which a semiconductor element to be ultrasonically bonded is placed, and the tool is mounted. The bonding head is moved to the installation location of the cleaning tank, and the tool that is still mounted on the bonding head is immersed in the cleaning liquid for cleaning.
With this configuration, the cleaning operation can be completed without performing operations such as removal and attachment of the tool from the bonding head, and thus the cleaning operation time can be shortened.
Japanese Patent Laid-Open No. 5-211195

しかし、前述のごとく、洗浄槽をボンディングステージに設置して、ツールをボンディングヘッドに装着したまま洗浄を行うように構成した場合、確かにツールのボンディングヘッドに対する着脱作業を行う時間を短縮することができるが、ツールを洗浄液に浸漬しての超音波洗浄によりツールの接合面に付着したアルミカスを除去するのにはある程度の時間を要し、洗浄作業全体としては依然として多くの時間が必要となるため、さらに洗浄作業時間を短縮して、生産ラインの稼動効率の向上を図ることが望まれている。
そこで、本発明においては、さらにツールの洗浄時間を短縮して、生産ラインの稼動効率の向上を図ることが可能なボンディング装置およびそのツールの洗浄方法を提供するものである。 However, as described above, when the cleaning tank is installed on the bonding stage and the cleaning is performed with the tool mounted on the bonding head, the time for attaching and detaching the tool to the bonding head can be shortened. Although it takes a certain amount of time to remove the aluminum residue adhering to the joint surface of the tool by ultrasonic cleaning with the tool immersed in the cleaning solution, the entire cleaning operation still requires a lot of time. Further, it is desired to shorten the cleaning work time and improve the operation efficiency of the production line.
Therefore, the present invention provides a bonding apparatus and a tool cleaning method that can further shorten the cleaning time of the tool and improve the operation efficiency of the production line.

上記課題を解決するボンディング装置およびそのツールの洗浄方法は、以下の特徴を有する。
即ち、請求項１記載のごとく、被接合物に対して接合母材を超音波接合するボンディング装置であって、被接合物が載置されるボンディングステージと、前記接合母材を前記被接合物に対して圧接するとともに、該接合母材に超音波振動を付与して、接合母材を被接合物に超音波接合するためのツールと、前記ツールが装着され、超音波発振器を備え、前記ボンディングステージに対して略水平方向および略垂直方向に相対的に移動可能であるボンディングヘッドと、前記ボンディングヘッドが移動可能であり、前記ツールによる接合動作が可能なボンディングエリアに設置されるバルク材とを備えており、前記バルク材は前記接合母材よりも高い硬度を有する部材にて構成され、前記ツールが前記バルク材に対して接合動作を実施可能に構成される。
これにより、ツールの接合面の洗浄を行う際に、該ツールのボンディングヘッドに対する着脱作業が必要でなくなり、少ない工程で洗浄工程を終えることが可能になって、ツールの接合面の洗浄作業に要する時間を短縮することができ、半導体装置の生産ラインの稼動効率を向上させることができる。
特に、ツールを洗浄液に浸漬して超音波洗浄することによりツールの接合面に付着した異物を除去しようとした場合には、超音波洗浄を行うのにある程度の時間を要するが、ツールによる接合動作は極僅かな時間で終了するため、洗浄作業全体として作業時間の短縮を図ることができる。 The bonding apparatus and the tool cleaning method for solving the above problems have the following characteristics.
That is, as in claim 1, a bonding apparatus for ultrasonically bonding a bonding base material to an object to be bonded, the bonding stage on which the object to be bonded is placed, and the bonding base material to the object to be bonded A tool for ultrasonically bonding the bonding base material to an object to be joined, and an ultrasonic oscillator provided with an ultrasonic oscillator, A bonding head that is relatively movable in a substantially horizontal direction and a substantially vertical direction with respect to the bonding stage; and a bulk material that is installed in a bonding area in which the bonding head is movable and can be bonded by the tool; The bulk material is composed of a member having a hardness higher than that of the bonding base material, and the tool can perform a bonding operation on the bulk material. It is.
As a result, when cleaning the bonding surface of the tool, it is not necessary to attach or detach the tool to or from the bonding head, and the cleaning process can be completed with a small number of steps, which is required for the cleaning operation of the bonding surface of the tool. Time can be shortened and the operating efficiency of the production line of semiconductor devices can be improved.
Especially when it is attempted to remove foreign matter adhering to the joint surface of the tool by immersing the tool in the cleaning solution and performing ultrasonic cleaning, it takes some time to perform ultrasonic cleaning. Is completed in a very short time, so that the entire cleaning operation can be shortened.

また、請求項２記載のごとく、前記ツールによる前記バルク材に対する接合動作は、所定の期間毎に行われる。
これにより、半導体素子等の被接合物に対する接合動作を行っているボンディング装置の稼動を中断することなく、ツールにおける接合面の洗浄を自動的に行うことができ、該接合面を接合母材の接合品質に問題が生じるような異物の付着がない状態に保持することが可能となって、接合品質の管理が容易になるとともに、接合品質の向上およびボンディング装置の稼動率の向上を図ることができる。 Further, as described in claim 2, the joining operation to the bulk material by the tool is performed every predetermined period.
Accordingly, the bonding surface of the tool can be automatically cleaned without interrupting the operation of the bonding apparatus that performs the bonding operation on the object to be bonded such as a semiconductor element. It is possible to maintain a state in which there is no foreign matter adhering to a problem in the bonding quality, facilitating the management of the bonding quality, and improving the bonding quality and the operating rate of the bonding apparatus. it can.

また、請求項３記載のごとく、被接合物が載置されるボンディングステージと、接合母材を前記被接合物に対して圧接するとともに、該接合母材に超音波振動を付与して、接合母材を被接合物に超音波接合するためのツールと、前記ツールが装着され、超音波発振器を備え、前記ボンディングステージに対して略水平方向および略垂直方向に相対的に移動可能であるボンディングヘッドとを備え、前記ツールにより前記被接合物に対して接合母材の超音波接合を行うボンディング装置におけるツールの洗浄方法であって、前記ボンディングヘッドが移動可能であり、前記ツールによる接合動作が可能なボンディングエリアに前記接合母材よりも高い硬度を有するバルク材を設置し、前記ボンディングヘッドを前記バルク材の設置箇所へ移動させて、前記ツールにより前記バルク材に対して接合動作を行う。
これにより、ツールの接合面の洗浄を行う際に、該ツールのボンディングヘッドに対する着脱作業が必要でなくなり、少ない工程で洗浄工程を終えることが可能になって、ツールの接合面の洗浄作業に要する時間を短縮することができ、半導体装置の生産ラインの稼動効率を向上させることができる。
特に、ツールを洗浄液に浸漬して超音波洗浄することによりツールの接合面に付着した異物を除去しようとした場合には、超音波洗浄を行うのにある程度の時間を要するが、ツールによる接合動作は極僅かな時間で終了するため、洗浄作業全体として作業時間の短縮を図ることができる。 According to a third aspect of the present invention, the bonding stage on which the object to be bonded is placed and the bonding base material are pressed against the object to be bonded, and ultrasonic vibration is applied to the bonding base material to bond the bonding base material. A tool for ultrasonic bonding of a base material to an object to be bonded and a bonding tool that is mounted with the tool and includes an ultrasonic oscillator and is relatively movable in a substantially horizontal direction and a substantially vertical direction with respect to the bonding stage. A cleaning method of a tool in a bonding apparatus that ultrasonically bonds a bonding base material to the object to be bonded by the tool, wherein the bonding head is movable, and a bonding operation by the tool is performed. A bulk material having a higher hardness than the bonding base material is installed in a possible bonding area, and the bonding head is moved to the installation location of the bulk material. Te, it performs a bonding operation with respect to the bulk material by the tool.
As a result, when cleaning the bonding surface of the tool, it is not necessary to attach or detach the tool to or from the bonding head, and the cleaning process can be completed with a small number of steps, which is required for the cleaning operation of the bonding surface of the tool. Time can be shortened and the operating efficiency of the production line of semiconductor devices can be improved.
Especially when it is attempted to remove foreign matter adhering to the joint surface of the tool by immersing the tool in the cleaning solution and performing ultrasonic cleaning, it takes some time to perform ultrasonic cleaning. Is completed in a very short time, so that the entire cleaning operation can be shortened.

また、請求項４記載のごとく、前記ツールによる前記バルク材に対する接合動作は、所定の期間毎に行われる。
これにより、半導体素子等の被接合物に対する接合動作を行っているボンディング装置の稼動を中断することなく、ツールにおける接合面の洗浄を自動的に行うことができ、該接合面を接合母材の接合品質に問題が生じるような異物の付着がない状態に保持することが可能となって、接合品質の管理が容易になるとともに、接合品質の向上およびボンディング装置の稼動率の向上を図ることができる。 Further, as described in claim 4, the joining operation to the bulk material by the tool is performed every predetermined period.
Accordingly, the bonding surface of the tool can be automatically cleaned without interrupting the operation of the bonding apparatus that performs the bonding operation on the object to be bonded such as a semiconductor element. It is possible to maintain a state in which there is no foreign matter adhering to a problem in the bonding quality, facilitating the management of the bonding quality, and improving the bonding quality and the operating rate of the bonding apparatus. it can.

本発明によれば、少ない工程で洗浄工程を終えることが可能になって、ツールの接合面の洗浄作業に要する時間を短縮することができ、半導体装置の生産ラインの稼動効率を向上させることができる。   According to the present invention, it is possible to finish the cleaning process with a small number of processes, the time required for cleaning the bonding surface of the tool can be shortened, and the operating efficiency of the production line of the semiconductor device can be improved. it can.

次に、本発明を実施するための形態を、添付の図面を用いて説明する。   Next, modes for carrying out the present invention will be described with reference to the accompanying drawings.

図１に示すボンディング装置は、ＩＧＢＴ素子等の半導体素子５１が実装された基板５２を筐体５３に収納して構成される半導体装置５０に対して、テープ状やワイヤ状等の線状に形成された接合母材となる金属導体をボンディングするための装置であり、本例の場合は、前記金属導体として、例えばテープ状に形成されたアルミテープ１５を用いている。   The bonding apparatus shown in FIG. 1 is formed in a linear shape such as a tape or wire with respect to a semiconductor device 50 configured by housing a substrate 52 on which a semiconductor element 51 such as an IGBT element is mounted in a housing 53. In this embodiment, for example, an aluminum tape 15 formed in a tape shape is used as the metal conductor.

ボンディング装置は、被接合物となる前記半導体素子５１を備えた半導体装置５０が載置されるボンディングステージ２０と、接合母材となるアルミテープ１５を前記半導体素子５１に対して圧接するとともに、該アルミテープ１５に超音波振動を付与して、アルミテープ１５を半導体素子５１に超音波接合するためのツール１３と、前記ツール１３が装着され、超音波発振器１２を有し、前記ボンディングステージ２０に対して略水平方向および略垂直方向に相対的に移動可能であるボンディングヘッド１１とを備えている。   The bonding apparatus presses the bonding stage 20 on which the semiconductor device 50 including the semiconductor element 51 to be bonded is placed, and the aluminum tape 15 to be a bonding base material against the semiconductor element 51, A tool 13 for applying ultrasonic vibration to the aluminum tape 15 to ultrasonically bond the aluminum tape 15 to the semiconductor element 51, the tool 13 is mounted, and an ultrasonic oscillator 12 is provided. On the other hand, a bonding head 11 that is relatively movable in a substantially horizontal direction and a substantially vertical direction is provided.

前記ボンディングヘッド１１、超音発振器１２、およびツール１３等により全体的にヘッド部１０を構成している。
また、前記ツール１３はアルミテープ１５よりも高硬度の金属部材にて構成されており、例えば、該ツール１３はタングステン系の合金材料（超硬）にて構成されている。 The head portion 10 is entirely constituted by the bonding head 11, the supersonic oscillator 12, the tool 13, and the like.
The tool 13 is made of a metal member having a hardness higher than that of the aluminum tape 15. For example, the tool 13 is made of a tungsten-based alloy material (carbide).

さらに、前記ツール１３の先端部には、前述の図１０に示した従来のツール１１３の接合面１１３ａと同様の接合面１３ａが構成されており、該接合面１３ａは、接合面１３ａとアルミテープ１５との間の摩擦係数を高めるために、従来の溝部１１３ｂと同様の多数の溝部が形成された凹凸形状となっている。   Further, a joint surface 13a similar to the joint surface 113a of the conventional tool 113 shown in FIG. 10 is configured at the tip of the tool 13, and the joint surface 13a is formed of the joint surface 13a and the aluminum tape. In order to increase the coefficient of friction between the groove portion 15 and the groove portion 15, the groove portion has a concavo-convex shape in which a large number of groove portions similar to the conventional groove portion 113 b are formed.

前記ボンディングヘッド１１には、超音発振器１２およびツール１３の他に、アルミテープ１５をツール１３の先端部へ案内するためのテープガイド１６、および被接合物に対するアルミテープ１５のボンディングの終了後に、該アルミテープ１５を切断するためのカッター１４等が備えられている。
また、前記ボンディングヘッド１１においては、超音発振器１２にて生成された超音波振動が前記ツール１３を通じて該ツール１３先端の接合面１３ａに伝達されるように構成されている。 In addition to the ultrasonic oscillator 12 and the tool 13, the bonding head 11 includes a tape guide 16 for guiding the aluminum tape 15 to the tip of the tool 13, and after the bonding of the aluminum tape 15 to the object to be joined, A cutter 14 or the like for cutting the aluminum tape 15 is provided.
The bonding head 11 is configured such that ultrasonic vibration generated by the ultrasonic oscillator 12 is transmitted to the bonding surface 13 a at the tip of the tool 13 through the tool 13.

さらに、前記ボンディングヘッド１１は、少なくとも前記ボンディングステージ２０の略全範囲上を移動可能に構成されており、該ボンディングステージ２０上であれば略全ての範囲で前記ツール１３による接合動作を行うことが可能となっている。
前記ボンディングステージ２０上においては、ブロック状に形成された金属部材であるバルク材３０が、前記半導体装置５０に隣接して設置されている。 Further, the bonding head 11 is configured to be movable at least substantially over the entire range of the bonding stage 20, and the bonding operation by the tool 13 can be performed over substantially the entire range as long as it is on the bonding stage 20. It is possible.
On the bonding stage 20, a bulk material 30, which is a metal member formed in a block shape, is installed adjacent to the semiconductor device 50.

前記バルク材３０は、被接合物である半導体素子５１に対する接合母材となるアルミテープ１５よりも高硬度の金属部材にて構成されており、本例の場合では該バルク材３０は、アルミに対して良好な接合性を示す銅材（Ｃｕ）にて構成されている。
また、前記バルク材３０としては、銅材（Ｃｕ）の他、ニッケル材（Ｎｉ）等の金属部材も用いることが可能であるが、本例では比較的安価である銅材（Ｃｕ）を用いている。 The bulk material 30 is composed of a metal member having a hardness higher than that of the aluminum tape 15 serving as a bonding base material for the semiconductor element 51 which is a bonded object. In this example, the bulk material 30 is made of aluminum. On the other hand, it is comprised with the copper material (Cu) which shows favorable bondability.
Further, as the bulk material 30, a metal member such as a nickel material (Ni) can be used in addition to a copper material (Cu). In this example, a relatively inexpensive copper material (Cu) is used. ing.

このように構成されるボンディング装置においては、アルミテープ１５の半導体素子５１に対する超音波接合が、次のようにして行われる。
つまり、本ボンディング装置においても、前述の図９に示した従来のボンディング装置によりボンディングを行う場合と同様に、前記ツール１３の下端面に構成される接合面１３ａを前記半導体素子５１上に載置されるアルミテープ１５に圧接させた状態で、前記超音波発振器１２にて生成した超音波振動を、該ツール１３を通じてアルミテープ１５へ付与して振動させる。
アルミテープ１５に超音波振動を付与することで、該アルミテープ１５と半導体素子５１との間に摩擦熱が生じ、これにより両者間に合金層が生成されて両者が接合されることとなる。 In the bonding apparatus configured as described above, ultrasonic bonding of the aluminum tape 15 to the semiconductor element 51 is performed as follows.
That is, also in this bonding apparatus, the bonding surface 13a formed on the lower end surface of the tool 13 is placed on the semiconductor element 51 in the same manner as in the case of bonding by the conventional bonding apparatus shown in FIG. The ultrasonic vibration generated by the ultrasonic oscillator 12 is applied to the aluminum tape 15 through the tool 13 and is vibrated in a state where the aluminum tape 15 is pressed.
By applying ultrasonic vibration to the aluminum tape 15, frictional heat is generated between the aluminum tape 15 and the semiconductor element 51, thereby generating an alloy layer between the two and joining them.

ここで、前記ツール１３によりアルミテープ１５に加圧・振動を付与して行う、該アルミテープ１５と前記半導体素子５１との接合作業の回数を重ねていくに従って、ツール１３の接合面１３ａとアルミテープ１５との間に生じる摩擦等により、該接合面１３ａにアルミカス等の異物が付着してしまうことになる。
これは、主に、ツール１３がアルミよりも高い硬度を有する金属部材で構成されているため、前記半導体素子５１に対する接合作業時にアルミテープ１５の表面がツール１３における接合面１３ａの凹凸により削り取られて、該接合面１３ａの溝部１３ｂに付着することによる。 Here, as the number of times of joining the aluminum tape 15 and the semiconductor element 51 performed by applying pressure and vibration to the aluminum tape 15 by the tool 13 is repeated, the joining surface 13a of the tool 13 and the aluminum Due to friction generated between the tape 15 and the like, foreign matter such as aluminum residue adheres to the joint surface 13a.
This is mainly because the tool 13 is made of a metal member having a hardness higher than that of aluminum, and therefore the surface of the aluminum tape 15 is scraped off by the unevenness of the bonding surface 13a of the tool 13 during the bonding operation to the semiconductor element 51. Thus, it adheres to the groove 13b of the joint surface 13a.

そこで、本ボンディング装置においては、次のようにしてツール１３の接合面１３ａに付着したアルミカスを洗浄して除去するように構成している。
つまり、前述のようなツール１３によるアルミテープ１５と半導体素子５１とを接合する動作が所定の回数だけ行われると、ボンディングヘッド１１が接合動作を行っていた半導体素子５１の上方位置から、前記ボンディングステージ２０上に設置されたバルク材３０の上方まで移動し、該バルク材３０に対してツール１３による接合動作が行われる。 Therefore, the present bonding apparatus is configured to clean and remove the aluminum residue adhering to the bonding surface 13a of the tool 13 as follows.
That is, when the operation of bonding the aluminum tape 15 and the semiconductor element 51 by the tool 13 as described above is performed a predetermined number of times, the bonding head 11 starts the bonding from the position above the semiconductor element 51 where the bonding operation has been performed. It moves to above the bulk material 30 installed on the stage 20, and the joining operation by the tool 13 is performed on the bulk material 30.

この場合、図２、図３に示すように、バルク材３０の上方へ移動したツール１３のバルク材３０に対する接合動作は、ツール１３をバルク材３０の上方位置から下降させて、該ツール１３の接合面１３ａをバルク材３０の上面に直接圧接させるとともに、超音発振器１２からの超音波振動を該ツール１３の接合面１３ａに付与することで行われる。   In this case, as shown in FIGS. 2 and 3, the joining operation of the tool 13 moved to the upper side of the bulk material 30 with respect to the bulk material 30 is performed by lowering the tool 13 from the upper position of the bulk material 30. The bonding surface 13 a is directly pressed against the upper surface of the bulk material 30 and the ultrasonic vibration from the ultrasonic oscillator 12 is applied to the bonding surface 13 a of the tool 13.

バルク材３０の上面に圧接されたツール１３の接合面１３ａに超音波振動を付与することで、該接合面１３ａとバルク材３０との間に摩擦が生じ、接合面１３ａに付着しているアルミカスが、アルミよりも高い硬度を有する部材にて構成されるバルク材３０と接合されて、該接合面１３ａから剥離することとなる。
このように、接合面１３ａに付着していたアルミカスが該接合面１３ａから剥離することにより、接合面１３ａが洗浄されて清浄な状態となる。 By applying ultrasonic vibration to the joint surface 13a of the tool 13 pressed against the upper surface of the bulk material 30, friction is generated between the joint surface 13a and the bulk material 30, and the aluminum residue adhered to the joint surface 13a. However, it joins with the bulk material 30 comprised with the member which has hardness higher than aluminum, and will peel from this joining surface 13a.
As described above, the aluminum residue adhering to the bonding surface 13a is peeled off from the bonding surface 13a, whereby the bonding surface 13a is cleaned and becomes a clean state.

なお、前記バルク材３０はアルミよりも高い硬度を有する部材にて構成されているが、該バルク材３０の硬度があまりにも高すぎると、バルク材３０に対してツール１３による接合動作をさせて行う前記接合面１３ａの洗浄作業を繰り返すにつれて、該ツール１３が摩耗する恐れがあり、逆に、バルク材３０の硬度があまりにも低いと前記洗浄作業時にバルク材３０が母材破壊してツール１３に付着する恐れがある。
従って、ツール１３、バルク材３０、およびアルミテープ１５等の接合母材の硬度の高さの関係は、「ツール１３＞＞バルク材３０＞＞接合母材（アルミテープ１５）」となることが望ましい。 The bulk material 30 is composed of a member having a higher hardness than aluminum. However, if the hardness of the bulk material 30 is too high, the bulk material 30 is joined by the tool 13. As the joining surface 13a cleaning operation to be performed is repeated, the tool 13 may be worn. Conversely, if the hardness of the bulk material 30 is too low, the bulk material 30 breaks the base material during the cleaning operation and the tool 13 is damaged. There is a risk of sticking to.
Therefore, the relationship between the hardness levels of the bonding base materials such as the tool 13, the bulk material 30, and the aluminum tape 15 may be "tool 13 >> bulk material 30 >> bonding base material (aluminum tape 15)". desirable.

本例のように、接合母材としてアルミテープ１５を用いる場合に、ツール１３をタングステン系の合金材料で構成し、バルク材３０を銅材（Ｃｕ）にて構成することで、洗浄作業によりツール１３の接合面１３ａに付着したアルミカスがバルク材３０に良く転写されるとともに、バルク材３０がツール１３の接合面１３ａに付着することがなく、良好な洗浄特性を得ることが可能となっている。   As in this example, when the aluminum tape 15 is used as the bonding base material, the tool 13 is made of a tungsten-based alloy material, and the bulk material 30 is made of a copper material (Cu). The aluminum residue adhering to the 13 joining surfaces 13a is well transferred to the bulk material 30, and the bulk material 30 does not adhere to the joining surfaces 13a of the tool 13, and good cleaning characteristics can be obtained. .

このように、本ボンディング装置において、ツール１３の接合面１３ａに付着したアルミカスを除去する場合は、図４に示すように、ツール１３にアルミカスが付着すると（Ｓ１１）、該ツール１３をバルク材３０上に移動させて、該バルク材３０に対して接合動作を行う（Ｓ１２）。
バルク材３０に対する接合動作が完了したツール１３の接合面１３ａからはアルミカスが除去されて清浄な状態となっているので、そのままボンディング装置設備の稼動を再開する（Ｓ１３）。 Thus, in this bonding apparatus, when removing the aluminum residue adhering to the joint surface 13a of the tool 13, as shown in FIG. 4, when the aluminum residue adheres to the tool 13 (S11), the tool 13 is attached to the bulk material 30. Then, the bonding operation is performed on the bulk material 30 (S12).
Since the aluminum residue has been removed from the joining surface 13a of the tool 13 where the joining operation to the bulk material 30 has been completed, the operation of the bonding apparatus is resumed (S13).

従来のように、接合面１１３ａに付着したアルミカスを除去するために、ツール１１３をボンディングヘッド１１１から取り外して洗浄液に浸漬した上で超音波洗浄を行っていたときには、前述のように洗浄工程としてステップＳ１０１〜Ｓ１０８までの多くの工程が必要となっていたが、本例のように、ツール１３による接合動作をバルク材３０に対して行うように構成することで、ツール１３のボンディングヘッド１１に対する着脱作業が必要でなくなり、ステップＳ１１〜Ｓ１３といった少ない工程で洗浄工程を終えることが可能になる。   When the ultrasonic cleaning is performed after removing the tool 113 from the bonding head 111 and immersing in the cleaning liquid in order to remove the aluminum residue adhering to the bonding surface 113a as in the prior art, the step is performed as a cleaning process as described above. Although many steps from S101 to S108 are required, by attaching the tool 13 to the bulk material 30 as in this example, the tool 13 is attached to and detached from the bonding head 11. There is no need for work, and the cleaning process can be completed with a small number of processes such as steps S11 to S13.

これにより、ツール１３の接合面１３ａの洗浄作業に要する時間を短縮することができ、半導体装置１０の生産ラインの稼動効率を向上させることができる。
特に、ツール１３を洗浄液に浸漬して超音波洗浄することによりツール１３の接合面１３ａに付着したアルミカスを除去しようとした場合には、超音波洗浄を行うのにある程度の時間を要するが、ツール１３による接合動作は極僅かな時間で終了するため、洗浄作業全体として作業時間の短縮を図ることができる。 Thereby, the time required for the cleaning operation of the joint surface 13a of the tool 13 can be shortened, and the operation efficiency of the production line of the semiconductor device 10 can be improved.
In particular, when aluminum scrap adhering to the joint surface 13a of the tool 13 is to be removed by immersing the tool 13 in a cleaning solution and performing ultrasonic cleaning, a certain amount of time is required to perform ultrasonic cleaning. Since the joining operation by 13 is completed in a very short time, the working time can be reduced as a whole of the cleaning work.

また、本ボンディング装置においては、ツール１３のバルク材３０に対する接合動作の実施は、半導体素子５１に対する接合動作を行った回数が所定の回数に達すると行うように、すなわち接合動作の実施を所定期間毎に行うように構成することができる。
この場合、所定の回数は、例えば、半導体素子５１に対する接合動作の繰り返しによりツール１３の接合面１３ａにアルミカスが付着するであろうと想定される回数に設定することができる。
また、ボンディング装置の稼動時間に応じてツール１３のバルク材３０に対する接合動作を行うように構成することもできる。 In the bonding apparatus, the bonding operation of the tool 13 to the bulk material 30 is performed when the number of times of performing the bonding operation to the semiconductor element 51 reaches a predetermined number of times, that is, the bonding operation is performed for a predetermined period. It can be configured to be performed every time.
In this case, the predetermined number of times can be set, for example, to a number of times that it is assumed that the aluminum residue will adhere to the bonding surface 13a of the tool 13 by repeating the bonding operation to the semiconductor element 51.
Moreover, it can also comprise so that the joining operation | movement with respect to the bulk material 30 of the tool 13 may be performed according to the operation time of a bonding apparatus.

このように、所定期間毎にツール１３のバルク材３０に対する接合動作を行うように設定することで、半導体素子５１に対する接合動作を行っているボンディング装置の稼動を中断することなく、ツール１３における接合面１３ａの洗浄を自動的に行うことができ、該接合面１３ａをアルミテープ１５の接合品質に問題が生じるようなアルミカスの付着がない状態に保持することが可能となって、接合品質の管理が容易になるとともに、接合品質の向上およびボンディング装置の稼動率の向上を図ることができる。   As described above, by setting the bonding operation of the tool 13 to the bulk material 30 every predetermined period, the bonding in the tool 13 can be performed without interrupting the operation of the bonding apparatus performing the bonding operation to the semiconductor element 51. The surface 13a can be automatically cleaned, and the joining surface 13a can be kept in a state where there is no adhesion of aluminum residue that causes a problem in the joining quality of the aluminum tape 15, thereby managing the joining quality. As a result, it is possible to improve the bonding quality and the operation rate of the bonding apparatus.

また、本ボンディング装置においては、図５に示すごとく、従来の装置と同様に、超音波接合の対象となる半導体素子５１が載置されるボンディングステージ２０上に、ツール１３洗浄用の洗浄液が貯溜された洗浄槽４０を設置し、図６に示すように、ツール１３が装着された状態のボンディングヘッド１１を前記洗浄槽４０の設置箇所へ移動させて、ボンディングヘッド１１に装着されたままの状態のツール１３を洗浄槽４０内の洗浄液に浸漬して洗浄を行うように構成することもできる。   Further, in this bonding apparatus, as shown in FIG. 5, the cleaning liquid for cleaning the tool 13 is stored on the bonding stage 20 on which the semiconductor element 51 to be ultrasonically bonded is placed, as in the conventional apparatus. 6 is installed, and the bonding head 11 with the tool 13 attached is moved to the place where the cleaning tank 40 is installed as shown in FIG. The tool 13 may be soaked in the cleaning liquid in the cleaning tank 40 for cleaning.

この場合、ツール１３を洗浄槽４０内の洗浄液に浸漬した状態でボンディングヘッド１１の超音発振器１２にて超音波振動を発生させることで、該ツール１３の接合面１３ａの超音波洗浄が行われることとなるため、超音波洗浄器を別途用意する必要がない。
なお、洗浄槽４０内に貯溜される洗浄液としては、例えば水酸化ナトリウム水溶液等の、アルミのみを溶解させるような溶液が用いられており、接合面１３ａに付着したアルミカスを効果的に除去できるように構成されている。 In this case, the ultrasonic cleaning of the bonding surface 13 a of the tool 13 is performed by generating ultrasonic vibration with the ultrasonic oscillator 12 of the bonding head 11 in a state where the tool 13 is immersed in the cleaning liquid in the cleaning tank 40. Therefore, it is not necessary to prepare an ultrasonic cleaner separately.
As the cleaning liquid stored in the cleaning tank 40, a solution that dissolves only aluminum, such as an aqueous sodium hydroxide solution, is used, so that the aluminum residue adhering to the joint surface 13a can be effectively removed. It is configured.

このように構成することで、ボンディングヘッド１１からツール１３を取り外して洗浄する場合に比べて洗浄工程の工程数を削減することができ、洗浄作業に要する時間を短縮することができる。   With this configuration, the number of cleaning steps can be reduced as compared with the case where the tool 13 is removed from the bonding head 11 for cleaning, and the time required for the cleaning operation can be shortened.

つまり、図７に示すように、ボンディングステージ２０上に設置した洗浄槽４０を用いてツール１３の洗浄を行う場合は、アルミカスが付着した状態のツール１３を（Ｓ２１）、ボンディングステージ２０上に準備された洗浄槽４０（Ｓ２２）の箇所まで移動させて、該ツール１３を洗浄槽４０内の洗浄液に浸漬させて超音波洗浄する（Ｓ２３）。
洗浄が完了したツール１３の接合面１３ａからはアルミカスが除去されて清浄な状態となっているので、そのままボンディング装置設備の稼動を再開する（Ｓ２４）。
このように、ステップＳ２１〜Ｓ２４といった少ない工程で洗浄工程を終えることができ、洗浄作業に要する時間を短縮することができる。 That is, as shown in FIG. 7, when the tool 13 is cleaned using the cleaning tank 40 installed on the bonding stage 20, the tool 13 with the aluminum residue attached is prepared on the bonding stage 20 (S <b> 21). The tool 13 is moved to the position of the cleaning tank 40 (S22), and the tool 13 is immersed in the cleaning liquid in the cleaning tank 40 and ultrasonically cleaned (S23).
Since the aluminum residue has been removed from the bonding surface 13a of the tool 13 that has been cleaned, the operation of the bonding apparatus is resumed (S24).
In this way, the cleaning process can be completed with a small number of processes such as steps S21 to S24, and the time required for the cleaning operation can be shortened.

ボンディングステージ上にバルク材を設置したボンディング装置を示す側面図である。It is a side view which shows the bonding apparatus which installed the bulk material on the bonding stage. ツールをバルク材の設置箇所に移動させた状態のボンディング装置を示す側面図である。It is a side view which shows the bonding apparatus of the state which moved the tool to the installation location of a bulk material. バルク材に対して接合動作を行っているツールを示す側面断面図である。It is side surface sectional drawing which shows the tool which is joining operation | movement with respect to a bulk material. バルク材に対する接合動作により行われるツールの接合面の洗浄作業のフローを示す図である。It is a figure which shows the flow of the cleaning operation | work of the joint surface of the tool performed by joining operation | movement with respect to a bulk material. ボンディングステージ上に洗浄液が貯溜された洗浄槽を設置したボンディング装置を示す側面図である。It is a side view which shows the bonding apparatus which installed the washing tank in which the washing | cleaning liquid was stored on the bonding stage. ツールを洗浄槽の設置箇所に移動させた状態のボンディング装置を示す側面図である。It is a side view which shows the bonding apparatus of the state which moved the tool to the installation location of the washing tank. ボンディングステージ上に設置した洗浄槽を用いて行われるツールの接合面の洗浄作業のフローを示す図である。It is a figure which shows the flow of the washing | cleaning operation | work of the joint surface of the tool performed using the washing tank installed on the bonding stage. 従来のボンディング装置を示す側面図である。It is a side view which shows the conventional bonding apparatus. ツールによる半導体素子に対するアルミテープの接合動作を示す側面断面図である。It is side surface sectional drawing which shows the joining operation | movement of the aluminum tape with respect to the semiconductor element by a tool. ツールの接合面を示す底面図である。It is a bottom view which shows the joint surface of a tool. ボンディングヘッドから取り外したツールを洗浄液に浸漬して超音波洗浄を行う様子を示す側面図である。It is a side view which shows a mode that the tool removed from the bonding head is immersed in a cleaning liquid, and ultrasonic cleaning is performed. 従来のツールの洗浄作業のフローを示す図である。It is a figure which shows the flow of the washing | cleaning operation | work of the conventional tool.

符号の説明Explanation of symbols

１０ ヘッド部
１１ ボンディングヘッド
１２ 超音発振器
１３ ツール
１３ａ 接合面
２０ ボンディングステージ
３０ バルク材
５０ 半導体装置
５１ 半導体素子 DESCRIPTION OF SYMBOLS 10 Head part 11 Bonding head 12 Supersonic oscillator 13 Tool 13a Bonding surface 20 Bonding stage 30 Bulk material 50 Semiconductor device 51 Semiconductor element

Claims (4)

被接合物に対して接合母材を超音波接合するボンディング装置であって、
被接合物が載置されるボンディングステージと、
前記接合母材を前記被接合物に対して圧接するとともに、該接合母材に超音波振動を付与して、接合母材を被接合物に超音波接合するためのツールと、
前記ツールが装着され、超音波発振器を備え、前記ボンディングステージに対して略水平方向および略垂直方向に相対的に移動可能であるボンディングヘッドと、
前記ボンディングヘッドが移動可能であり、前記ツールによる接合動作が可能なボンディングエリアに設置されるバルク材とを備えており、
前記バルク材は前記接合母材よりも高い硬度を有する部材にて構成され、
前記ツールが前記バルク材に対して接合動作を実施可能に構成される、
ことを特徴とするボンディング装置。 A bonding apparatus for ultrasonically bonding a bonding base material to an object to be bonded,
A bonding stage on which workpieces are placed;
A tool for ultrasonically bonding the bonding base material to the object to be bonded, press-bonding the bonding base material to the object to be bonded, and applying ultrasonic vibration to the bonding base material;
A bonding head that is mounted with the tool, includes an ultrasonic oscillator, and is relatively movable in a substantially horizontal direction and a substantially vertical direction with respect to the bonding stage;
The bonding head is movable, and comprises a bulk material installed in a bonding area where the bonding operation by the tool is possible,
The bulk material is composed of a member having a higher hardness than the bonding base material,
The tool is configured to be capable of performing a bonding operation on the bulk material.
A bonding apparatus characterized by that. 前記ツールによる前記バルク材に対する接合動作は、所定の期間毎に行われる、ことを特徴とする請求項１に記載のボンディング装置。   The bonding apparatus according to claim 1, wherein the bonding operation to the bulk material by the tool is performed every predetermined period. 被接合物が載置されるボンディングステージと、
接合母材を前記被接合物に対して圧接するとともに、該接合母材に超音波振動を付与して、接合母材を被接合物に超音波接合するためのツールと、
前記ツールが装着され、超音波発振器を備え、前記ボンディングステージに対して略水平方向および略垂直方向に相対的に移動可能であるボンディングヘッドとを備え、
前記ツールにより前記被接合物に対して接合母材の超音波接合を行うボンディング装置におけるツールの洗浄方法であって、
前記ボンディングヘッドが移動可能であり、前記ツールによる接合動作が可能なボンディングエリアに前記接合母材よりも高い硬度を有するバルク材を設置し、
前記ボンディングヘッドを前記バルク材の設置箇所へ移動させて、前記ツールにより前記バルク材に対して接合動作を行う、
ことを特徴とするボンディング装置におけるツールの洗浄方法。 A bonding stage on which workpieces are placed;
A tool for ultrasonically bonding the bonding base material to the object to be bonded, by pressing the bonding base material against the object to be bonded and applying ultrasonic vibration to the bonding base material;
A bonding head that is mounted with the tool, includes an ultrasonic oscillator, and is relatively movable in a substantially horizontal direction and a substantially vertical direction with respect to the bonding stage;
A cleaning method for a tool in a bonding apparatus that performs ultrasonic bonding of a bonding base material to the workpiece with the tool,
The bonding head is movable, and a bulk material having a higher hardness than the bonding base material is installed in a bonding area where the bonding operation by the tool is possible,
The bonding head is moved to the installation location of the bulk material, and the bonding operation is performed on the bulk material by the tool.
A method for cleaning a tool in a bonding apparatus. 前記ツールによる前記バルク材に対する接合動作は、所定の期間毎に行われる、ことを特徴とする請求項３に記載のボンディング装置におけるツールの洗浄方法。

4. The method for cleaning a tool in a bonding apparatus according to claim 3, wherein the bonding operation to the bulk material by the tool is performed every predetermined period.

JP2007159110A 2007-06-15 2007-06-15 Bonding device, and cleaning method of its tool Pending JP2008311511A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010207885A (en) * 2009-03-11 2010-09-24 Nissan Motor Co Ltd Ultrasonic joining method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010207885A (en) * 2009-03-11 2010-09-24 Nissan Motor Co Ltd Ultrasonic joining method

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