JP2008309146A - 内燃機関用点火装置 - Google Patents
内燃機関用点火装置 Download PDFInfo
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- JP2008309146A JP2008309146A JP2007307318A JP2007307318A JP2008309146A JP 2008309146 A JP2008309146 A JP 2008309146A JP 2007307318 A JP2007307318 A JP 2007307318A JP 2007307318 A JP2007307318 A JP 2007307318A JP 2008309146 A JP2008309146 A JP 2008309146A
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- 238000002485 combustion reaction Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000007257 malfunction Effects 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 abstract description 3
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- 238000004804 winding Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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Abstract
【解決手段】スイッチIC2のグランド電位としてのエミッタ用パッド2bと制御回路IC3の回路グランドとしての回路グランド用パッド3bとをワイヤW6でそれぞれ接続すると共に、制御回路IC3においてエミッタ用パッド2bに対応した回路グランド用パッド3bとFG用パッド3cとをワイヤW7で接続する。これにより、スイッチIC2のエミッタ電位、制御回路IC3の回路グランド、そしてFGを同電位とし、ノイズの影響を防止する。
【選択図】図3
Description
回路グランド用パッド(3b)と前記フィールドグランド用パッド(3c)とはワイヤ(W7)を介して接続されていることを特徴とする。
以下、本発明の第1実施形態について図を参照して説明する。以下で示される内燃機関用点火装置は、例えば内燃機関に設置された点火コイルへの通電を制御するイグナイタとして用いられ、内燃機関での点火タイミングを制御するものとして好適である。
上記実施形態では、点火装置1としてイグナイタを例に説明したが、負荷のスイッチングを行う半導体スイッチング素子を備えたスイッチIC2や当該スイッチIC2を制御駆動する制御回路IC3を備えた電子装置に対しても本発明を採用することができる。
Claims (4)
- 点火コイル(4)に流れるコイル電流のスイッチングを行う半導体スイッチング素子(5)が備えられたスイッチIC(2)と、
前記スイッチIC(2)における前記半導体スイッチング素子(5)をON、OFF制御するための制御信号を出力する制御回路IC(3)とを備え、
前記制御回路IC(3)は、
当該制御回路IC(3)に作り込まれた回路の回路グランドに接続された回路グランド用パッド(3b)と、
前記制御回路IC(3)において回路が形成されていない領域の一部をフィールドグランドとし、当該フィールドグランドに接続されたフィールドグランド用パッド(3c)とを有し、
前記回路グランド用パッド(3b)と前記フィールドグランド用パッド(3c)とはワイヤ(W7)を介して接続されていることを特徴とする点火装置。 - 前記スイッチIC(2)は、前記半導体スイッチング素子(5)のエミッタ電位に接続されたエミッタ用パッド(2b)を有し、
前記制御回路IC(3)の前記回路グランド用パッド(3b)と前記スイッチIC(2)の前記エミッタ用パッド(2b)とはワイヤ(W6)を介して接続されていることを特徴とする請求項1に記載の点火装置。 - 負荷のスイッチングを行う半導体スイッチング素子(5)が備えられたスイッチIC(2)と、
前記スイッチIC(2)における前記半導体スイッチング素子(5)をON、OFF制御するための制御信号を出力する制御回路IC(3)とを備え、
前記制御回路IC(3)は、
当該制御回路IC(3)に作り込まれた回路の回路グランドに接続された回路グランド用パッド(3b)と、
前記制御回路IC(3)において回路が形成されていない領域の一部をフィールドグランドとし、当該フィールドグランドに接続されたフィールドグランド用パッド(3c)とを有し、
前記回路グランド用パッド(3b)と前記フィールドグランド用パッド(3c)とはワイヤ(W7)を介して接続されていることを特徴とする電子装置。 - 前記スイッチIC(2)は、前記半導体スイッチング素子(5)のエミッタ電位に接続されたエミッタ用パッド(2b)を有し、
前記制御回路IC(3)の前記回路グランド用パッド(3b)と前記スイッチIC(2)の前記エミッタ用パッド(2b)とはワイヤ(W6)を介して接続されていることを特徴とする請求項3に記載の電子装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007307318A JP4983571B2 (ja) | 2007-05-16 | 2007-11-28 | 内燃機関用点火装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007130317 | 2007-05-16 | ||
JP2007130317 | 2007-05-16 | ||
JP2007307318A JP4983571B2 (ja) | 2007-05-16 | 2007-11-28 | 内燃機関用点火装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008309146A true JP2008309146A (ja) | 2008-12-25 |
JP4983571B2 JP4983571B2 (ja) | 2012-07-25 |
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JP2007307318A Active JP4983571B2 (ja) | 2007-05-16 | 2007-11-28 | 内燃機関用点火装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015043380A (ja) * | 2013-08-26 | 2015-03-05 | 富士電機株式会社 | 半導体装置 |
JP2016017512A (ja) * | 2014-07-11 | 2016-02-01 | 富士電機株式会社 | 内燃機関の点火制御装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63300542A (ja) * | 1987-05-29 | 1988-12-07 | Nec Corp | 半導体集積回路装置 |
JPH0289871U (ja) * | 1988-12-28 | 1990-07-17 | ||
JP2006299988A (ja) * | 2005-04-22 | 2006-11-02 | Denso Corp | 内燃機関用点火装置 |
-
2007
- 2007-11-28 JP JP2007307318A patent/JP4983571B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63300542A (ja) * | 1987-05-29 | 1988-12-07 | Nec Corp | 半導体集積回路装置 |
JPH0289871U (ja) * | 1988-12-28 | 1990-07-17 | ||
JP2006299988A (ja) * | 2005-04-22 | 2006-11-02 | Denso Corp | 内燃機関用点火装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015043380A (ja) * | 2013-08-26 | 2015-03-05 | 富士電機株式会社 | 半導体装置 |
JP2016017512A (ja) * | 2014-07-11 | 2016-02-01 | 富士電機株式会社 | 内燃機関の点火制御装置 |
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