JP2008306197A5 - - Google Patents
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- Publication number
- JP2008306197A5 JP2008306197A5 JP2008177725A JP2008177725A JP2008306197A5 JP 2008306197 A5 JP2008306197 A5 JP 2008306197A5 JP 2008177725 A JP2008177725 A JP 2008177725A JP 2008177725 A JP2008177725 A JP 2008177725A JP 2008306197 A5 JP2008306197 A5 JP 2008306197A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous silicon
- semiconductor device
- nitride
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Claims (5)
前記ｎ型の窒化物系半導体層上に形成されるオーミック電極とを備え、
前記オーミック電極は、前記ｎ型の窒化物系半導体層上に形成されるアモルファスシリコン層と、前記アモルファスシリコン層上に形成される第１金属層とを含む、窒化物系半導体素子。 an n-type nitride-based semiconductor layer;
An ohmic electrode formed on the n-type nitride semiconductor layer,
The ohmic electrode is a nitride semiconductor element including an amorphous silicon layer formed on the n-type nitride semiconductor layer and a first metal layer formed on the amorphous silicon layer.
The silicon layer has a 30nm or less thick than 0.5 nm, the nitride-based semiconductor device according to any one of claims 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008177725A JP2008306197A (en) | 2005-06-29 | 2008-07-08 | Nitride semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005190316 | 2005-06-29 | ||
| JP2008177725A JP2008306197A (en) | 2005-06-29 | 2008-07-08 | Nitride semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006160157A Division JP4183719B2 (en) | 2005-06-29 | 2006-06-08 | Nitride semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008306197A JP2008306197A (en) | 2008-12-18 |
| JP2008306197A5 true JP2008306197A5 (en) | 2009-07-16 |
Family
ID=37597756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008177725A Pending JP2008306197A (en) | 2005-06-29 | 2008-07-08 | Nitride semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2008306197A (en) |
| CN (1) | CN1893110A (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6352473A (en) * | 1986-08-22 | 1988-03-05 | Nippon Telegr & Teleph Corp <Ntt> | Compound semiconductor device |
| JPS63199460A (en) * | 1987-02-16 | 1988-08-17 | Nippon Denso Co Ltd | Semiconductor device |
| JP3599592B2 (en) * | 1999-03-30 | 2004-12-08 | 古河電気工業株式会社 | Method for forming electrode on group III-V nitride compound semiconductor |
| JP2005116725A (en) * | 2003-10-07 | 2005-04-28 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
-
2006
- 2006-06-29 CN CN 200610095956 patent/CN1893110A/en active Pending
-
2008
- 2008-07-08 JP JP2008177725A patent/JP2008306197A/en active Pending
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