JP2008298749A5 - - Google Patents

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Publication number
JP2008298749A5
JP2008298749A5 JP2007148376A JP2007148376A JP2008298749A5 JP 2008298749 A5 JP2008298749 A5 JP 2008298749A5 JP 2007148376 A JP2007148376 A JP 2007148376A JP 2007148376 A JP2007148376 A JP 2007148376A JP 2008298749 A5 JP2008298749 A5 JP 2008298749A5
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Japan
Prior art keywords
heating
probe
amount
inspection object
control means
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JP2007148376A
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Japanese (ja)
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JP4981525B2 (en
JP2008298749A (en
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Priority claimed from JP2007148376A external-priority patent/JP4981525B2/en
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Claims (3)

検査対象物にコンタクトする複数のプローブおよび上記プローブが配置されたプローブカード基板を備えた半導体検査装置であって、
上記プローブカード基板を加熱する手段、および上記加熱手段による加熱量を制御する加熱制御手段を備え、
上記プローブの先端の位置を、予め上記検査対象物が冷却されて収縮した位置に合わせて設定し、常温よりも低温での検査の際に、上記加熱制御手段によって上記発熱体による加熱量を制御することにより、上記プローブカード基板の熱変形量を制御し、上記プローブ先端の位置を調整することを特徴とする半導体検査装置。
A semiconductor inspection apparatus comprising a plurality of probes that contact an inspection object and a probe card substrate on which the probes are arranged ,
A means for heating the probe card substrate, and a heating control means for controlling the amount of heating by the heating means,
The position of the tip of the probe is set in advance according to the position where the inspection object is cooled and contracted, and the amount of heating by the heating element is controlled by the heating control means during inspection at a temperature lower than normal temperature. By doing so, the amount of thermal deformation of the probe card substrate is controlled, and the position of the probe tip is adjusted .
上記加熱制御手段が、検査対象物と上記プローブ先端との位置ずれ量を検出する位置検出手段と、上記位置検出手段によって検出された位置ずれ量が最小値になるように上記発熱体に供給される電流値を制御する電流制御手段を備えることを特徴とする請求項1記載の半導体検査装置。   The heating control means is supplied to the heating element such that the positional deviation between the inspection object and the probe tip is detected, and the positional deviation detected by the positional detection means is minimized. 2. The semiconductor inspection apparatus according to claim 1, further comprising current control means for controlling a current value. 上記位置検出手段が、上記プローブの中から基準となるプローブを設定し、光学計測装置を用いて、上記基準となるプローブの先端位置を検出して2次元上の座標上に描き、上記基準となるプローブがコンタクトする予定の上記検査対象物の位置を検出して上記2次元上の座標上に描き、上記基準となるプローブが実際にコンタクトした検査対象物の位置を検出して上記2次元上の座標上に描くことにより、上記座標上での上記プローブと上記検査対象物との位置ずれを算出する機能を備え、
上記電流制御手段は、上記プローブカード基板の加熱量と熱変形量との関係、および上記加熱量と上記電流値との関係を基にして、位置補正を行うために必要な電流を上記発熱体に供給する機能を備えていることを特徴とする請求項2記載の半導体検査装置。
The position detection means sets a reference probe from the probes, detects the tip position of the reference probe using an optical measurement device, draws it on a two-dimensional coordinate, The position of the inspection object to be contacted by the probe is drawn on the two-dimensional coordinates, and the position of the inspection object actually contacted by the reference probe is detected and the two-dimensional By drawing on the coordinates of the above, with the function of calculating the positional deviation between the probe and the inspection object on the coordinates,
The current control means supplies the current required for position correction based on the relationship between the heating amount and the thermal deformation amount of the probe card substrate and the relationship between the heating amount and the current value to the heating element. 3. The semiconductor inspection apparatus according to claim 2, further comprising a function of supplying to the semiconductor inspection apparatus.
JP2007148376A 2007-06-04 2007-06-04 Semiconductor inspection equipment Active JP4981525B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007148376A JP4981525B2 (en) 2007-06-04 2007-06-04 Semiconductor inspection equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007148376A JP4981525B2 (en) 2007-06-04 2007-06-04 Semiconductor inspection equipment

Publications (3)

Publication Number Publication Date
JP2008298749A JP2008298749A (en) 2008-12-11
JP2008298749A5 true JP2008298749A5 (en) 2011-04-14
JP4981525B2 JP4981525B2 (en) 2012-07-25

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ID=40172384

Family Applications (1)

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JP2007148376A Active JP4981525B2 (en) 2007-06-04 2007-06-04 Semiconductor inspection equipment

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JP (1) JP4981525B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5258590B2 (en) * 2009-01-16 2013-08-07 株式会社日本マイクロニクス Integrated circuit testing equipment
JP5294954B2 (en) * 2009-04-07 2013-09-18 株式会社日本マイクロニクス Probe card manufacturing method
JP5235163B2 (en) 2009-05-18 2013-07-10 株式会社日本マイクロニクス Inspection device
US20140091826A1 (en) * 2012-10-03 2014-04-03 Corad Technology Inc. Fine pitch interface for probe card
KR102077062B1 (en) 2013-02-25 2020-02-13 삼성전자주식회사 Probe card and apparatus for testing an object including the same
CN106269542B (en) * 2015-06-11 2018-05-22 鸿劲科技股份有限公司 Electronic component preheats pre-cooler and its implement of application

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152389A (en) * 1991-11-27 1993-06-18 Mitsubishi Electric Corp Probe card
JP3103959B2 (en) * 1993-08-18 2000-10-30 東京エレクトロン株式会社 Probe device
JPH11145215A (en) * 1997-11-11 1999-05-28 Mitsubishi Electric Corp Tester for semiconductor and controlling method therefor
JP2000346875A (en) * 1999-06-07 2000-12-15 Advantest Corp Probe card and ic testing device using it
JP2003215162A (en) * 2002-01-17 2003-07-30 Seiko Epson Corp Probe card, and semi-conductor measuring instrument provided with the same

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