JP2008280617A - Composite film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the reliability in the elevating/lowering operation of a substrate in a device for perming a film deposition by holding the film-depositing surface of the substrate downward so as to be almost vertical. <P>SOLUTION: The inner wall 35a of an elevating/lowering part in a clamp block 31, which holds a part of a substrate adopter 2 fixed with the substrate S and elevates/lowers, is composed of a single member. As a result, a level difference caused by the joining of a constituting member does not occur in the inner wall 35a of the elevating/lowering part, and, even if a gap between the inner wall 35a of the elevating/lowering part and the clamp block 31 is reduced, the phenomenon that a part of the clamp block 31 or the substrate adaptor 2 held to the clamp block 31 is caught in a level difference can be prevented. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a film forming apparatus such as a sputtering apparatus or a CVD apparatus used for manufacturing semiconductors and hard disks, and a composite film forming apparatus.

In a conventional film forming apparatus such as a sputtering apparatus, a film is formed on the upper surface of the substrate. For this reason, there is a drawback that foreign matters such as dust are likely to adhere to the film formation surface of the substrate placed on the stage, and there is a possibility that the film may be defective due to the attachment of foreign matters. Further, since the substrate is transported with the film-forming surface of the substrate facing upward in the substrate transport process, there is a similar problem.

In order to solve this problem, Patent Document 1 discloses a film forming apparatus that performs film formation in a state where the film formation surface of the substrate is held substantially vertically downward. In this film forming apparatus, as shown in FIG. 7, the substrate S is fixed to the substrate adapter 71 using claws 71c and bolts B, and the upper surface of the substrate adapter 71 (the side opposite to the surface 71a on which the substrate S is mounted). The head portion 71b protruding from the surface) is held by the substrate holding mechanism installed in the film forming chamber of the film forming apparatus, so that the film forming surface of the substrate is fixed vertically downward in the film forming chamber. . Since the film formation surface faces vertically downward, it is possible to prevent fine reactive organisms and dust from adhering to the film formation surface and the film formation surface, and to form a high-quality film Can do.

In Patent Document 1, the substrate holding mechanism is integrated with the wall surface of the film forming chamber, but it can be installed in the film forming chamber as an independent structure. FIG. 6 is a diagram showing a substrate holding mechanism having an independent structure. The substrate holding mechanism shown in FIG. 6 includes a clamp block 61 that chucks the substrate adapter 7, a lifting mechanism 62 that vertically moves the clamp block and the substrate adapter held by the clamp block, and a housing 63 that stores the clamp block. And a stage 64 that fixes the substrate adapter and the substrate fixed to the substrate adapter at a predetermined position in the film forming chamber by contacting the substrate adapter.
JP 2001-131749 A

  In the conventional film forming apparatus, as shown in FIG. 6, the elevating part 65 for raising and lowering the clamp block includes a part of the housing 63 and a part of the stage 64 for ease of assembly. For this reason, the joint portion A between the housing 63 and the stage 64 exists on the inner wall 65a of the elevating part, and a step may occur in this joint part depending on the assembly accuracy of the elevating mechanism. The clearance between the inner wall 65a of the lifting part and the clamp block 61 needs to be as small as possible so that the substrate adapter does not deviate during the lifting operation. Therefore, the clamp block 61 and the clamp block 61 are gripped by the step formed in the joint part. A part of the board adapter 7 may be caught. As a result, the clamp block 61 cannot be moved up and down, and the film forming process may be interrupted.

An object of the present invention is to provide a film forming apparatus and a composite film forming apparatus that improve the reliability of the lifting and lowering operation of the clamp block without impairing the ease of assembly of the substrate holding mechanism.

  The film forming apparatus of the present invention includes a substrate adapter for fixing the substrate, and the film forming apparatus provided with a film forming chamber for forming a film in a state where the film formation surface of the substrate is held substantially vertically downward. A clamp block for gripping a part of the substrate adapter so that the film-forming surface of the substrate is substantially vertically downward in the room, and the clamp block is gripped by being connected to the clamp block and performing an elevating operation. Elevating mechanism for moving the substrate adapter in the film forming chamber and fixing it at a predetermined position in the film forming chamber, and an elevating unit for raising and lowering the clamp block and a part of the substrate adapter held by the clamp block by the elevating operation And the inner wall of the elevating part is composed of a single member.

  In addition, the composite film deposition apparatus of the present invention includes two or more of the film deposition apparatuses described above, and transports the substrate with the deposition surface of the substrate held substantially vertically downward between the film deposition apparatuses. It has the device.

In the substrate holding mechanism of the present invention, the clamp block is lowered by the elevating mechanism, a part of the substrate adapter conveyed to the lower part of the substrate holding mechanism is gripped, and then the clamp block is raised and fixed to the substrate adapter and the substrate adapter. The substrate is moved in the film formation chamber and then fixed at a predetermined position.

  In this operation, by configuring the inner wall of the lifting unit with a single member, a step due to joining of the component members does not occur on the inner wall of the lifting unit, and even if the gap between the inner wall of the lifting unit and the clamp block is reduced, It is possible to prevent the clamp block or a part of the substrate adapter held by the clamp block from being caught on the inner wall of the elevating unit.

With such a mechanism, an error in the raising / lowering operation can be prevented, and a reduction in film formation yield due to interruption of the film formation process can be prevented. In particular, in the case where two or more layers are deposited on the deposition surface of a substrate with a deposition apparatus having two or more deposition chambers, the reliability of the lifting operation in each deposition chamber is improved. The deposition yield can be further improved as compared with a deposition apparatus having one chamber.

The best mode for carrying out the present invention will be described with reference to FIG. FIG. 1 is a diagram showing an embodiment of a film forming apparatus according to the present invention, and is a diagram showing a schematic configuration of an ECR-CVD apparatus. In the film forming chamber 1 of the ECR-CVD apparatus, the substrate S fixed to the substrate adapter 2 is mounted by the substrate holding mechanism 30 with the film forming surface P facing downward. The details of the board adapter 2 and the mechanism for mounting it on the apparatus will be described later. The ECR plasma generator 3 supplies microwave power in a magnetic field to generate electron cyclotron resonance plasma, and introduces a plasma flow into the film forming chamber 1.

When a 2.45 GHz microwave generated by the microwave source 4 is introduced into the plasma chamber 6 through the waveguide 5, a microwave discharge is generated in the plasma chamber 6. Further, when the magnetic flux density 875G under the ECR condition is formed by the magnetic field generated by the coils 7 and 8, electron cyclotron resonance is generated and active ECR plasma is generated. The ECR plasma generated in the plasma chamber 6 moves from the plasma window 9 into the upper film formation chamber 1 along the divergent magnetic field.

In the bias power supply unit 10, the bias power supply 11 is connected to the substrate adapter 2 in the film forming chamber 1 via the matching unit 12, and a negative bias voltage is applied to the substrate S disposed in the film forming chamber 1. Is done. This bias voltage is measured by the voltage monitor 13. The reaction gas introduced into the film formation chamber 1 from the reaction gas introduction unit 14 is ionized in the high density plasma by ECR, and is formed on the film formation surface P of the substrate S by the negative bias voltage. For example, when a DLC (Diamondlike Carbon) film is formed, ethylene (C2H4), methane (CH4), propane (C3H8), and the like are supplied from the reaction gas introduction unit 14 as a film forming gas. Reference numeral 15 denotes an exhaust pump for exhausting the film forming chamber 1, and 16 is a pressure gauge for measuring the pressure in the film forming chamber 1. Note that control of the entire apparatus and film formation conditions are performed by the control unit 17.

FIG. 2 is a perspective view of the board adapter 2 on which the board S is mounted. The substrate S is fixed to the lower surface 2a of the substrate adapter 2 using the claws 2c and the bolts B. On the upper surface of the substrate adapter 2 (surface opposite to the surface 2a on which the substrate s is mounted), a head portion 2b is projected. The substrate adapter 2 on which the substrate S is mounted is transferred to the film forming chamber 1 in FIG. 1 with the substrate S side in the vertically downward state and the film formation surface P facing vertically downward.

FIG. 3 is a cross-sectional view of the substrate holding mechanism 30 provided in the upper part of the film forming chamber 1 of FIG. The substrate holding mechanism 30 includes a clamp block 31 that holds the head portion 2b of the substrate adapter 2, a lifting mechanism 32 that is coupled to the clamp block 31 and moves up and down in the vertical direction, a housing 33 that stores the clamp block 31, and the substrate adapter 2. The substrate adapter and a stage 34 for fixing the substrate fixed to the substrate adapter at a predetermined position in the film forming chamber 1. The clamp block 31, the housing 33, and the stage 34 are made of austenitic stainless steel. However, the clamp block 31, the housing 33, and the stage 34 are not limited to these members, and optimum members can be appropriately selected depending on the conditions of the film forming process. The housing 33 is made so that at least the inner wall 35a of the elevating part is composed of a single member, and has a structure that penetrates a hole provided in the center of the stage 34. With this structure, it is possible to assemble each component without causing a step in the inner wall 35a of the elevating part 35 where the clamp block moves up and down. The substrate adapter 2 is held so that the head portion 2b is hung on the clamp block 31. The substrate holding mechanism 30 is fixed to the upper wall 1a of the film forming chamber 1 and holds the substrate in the film forming chamber. The bias power supply 11 and the matching circuit 12 of FIG. 1 are connected to the substrate adapter 2 via the housing 33 and the stage 34, and a negative bias voltage is applied to the substrate S.

The manner in which the substrate adapter is held by the clamp block in the film forming chamber 1 of the film forming apparatus will be described with reference to FIG. The transfer robot 21 on which the substrate adapter 2 is placed is moved in the arrow R direction with respect to the clamp block 31, and the shaft 201 of the head portion 2 b is inserted into the long hole portion 311 formed in the clamp block 31. Next, when the clamp block 31 is lifted upward by an elevating mechanism 32 (air cylinder or the like) shown in FIG. 3, the head portion 2 b is hooked on the clamp block 31 and the board adapter 2 is suspended from the clamp block 31. .

When the substrate adapter 2 on which the substrate S is mounted is suspended from the clamp block 31, the clamp block 31 is further lifted by the lifting mechanism 32, and the substrate adapter 2 is brought into contact with the stage 34 of FIG. As shown in FIG. 3, since there is no step on the inner wall 35a of the lifting part 35 where the clamp block 31 moves up and down, the board adapter 2 is brought into contact with the stage 34 in FIG. 3 without hooking the head part 2b on the inner surface of the lifting part in FIG. Can be touched.

In this way, the substrate adapter 2 on which the substrate S is mounted is fixed in the film forming chamber 1 of FIG. 1, and then a film forming process is performed. As described above, the substrate adapter 2 to which the substrate S is fixed is pulled upward by the lifting mechanism 32 and brought into contact with the stage 34. Therefore, the substrate S can be securely fixed without being displaced by vibration or the like. .

FIG. 5 is a diagram showing an example of a composite film forming apparatus 50 in which a plurality of film forming apparatuses are integrated. The composite film forming apparatus 50 in FIG. 5 is an apparatus that forms a protective film on a magnetic head, for example, and has a load lock chamber 52, a sputtering apparatus 53, an etching apparatus 54, and a transfer chamber 51 where the transfer robot 21 is provided. An ECR-CVD apparatus 55 is integrally provided via gate valves 56a to 56d. A substrate holding mechanism 30 shown in FIG. 3 is provided inside the sputtering apparatus 53, the etching apparatus 54, and the ECR-CVD apparatus 55. The load lock chamber 52 is loaded with a substrate cassette 57 that stores a plurality of substrates S mounted on the substrate adapter 2. In FIG. 5, a plurality of substrates S are stored side by side in a direction perpendicular to the paper surface. In the substrate cassette 57, the deposition surface P (see FIG. 2) of the substrate S is stored so as to face vertically downward.

As an example, a film forming procedure when a Si thin film is formed as the first layer and a DLC (Diamondlike Carbon) thin film is formed as the second layer on the deposition surface P of the substrate S in FIG. 2 is as follows. . First, the load lock chamber 52 is opened to the atmosphere, and the substrate cassette 57 is loaded into the load lock chamber 52. At this time, the gate valves 56b to 56d are closed, and the transfer chamber 51, the sputtering device 53, the etching device 54, and the ECR-CVD device 55 are each evacuated.

Next, after the load lock chamber 52 is evacuated, the gate valve 56a is opened, the transfer robot 21 takes out one substrate holder 2 mounted with the substrate S from the substrate cassette 57, and after closing the gate valve 56a, the gate valve 56a is closed. 56c is opened and loaded into the etching apparatus 54. Even in the etching apparatus 54, the substrate adapter 2 is set at a predetermined position by the substrate holding mechanism 30 shown in FIG.

Thereafter, the gate valve 56c is closed and the deposition surface P of the substrate S is cleaned by etching to remove the oxide film and the like. This etching is also performed with the deposition surface P of the substrate S facing down. When the etching is completed, the gate valve 56c is opened and the substrate S is taken out from the etching apparatus 54. After the gate valve 56c is closed, the gate valve 56b is opened and the substrate S is loaded into the sputtering apparatus 53. Also in the sputtering apparatus 53, the substrate adapter 2 is set at a predetermined position by the substrate holding mechanism 30 shown in FIG. 3, and sputtering is performed with the deposition surface P of the substrate S facing downward. In the sputtering apparatus 53, a Si layer is deposited on the deposition surface P of the substrate S by a predetermined thickness by sputtering.

Next, when the sputtering is completed, the gate valve 56b is opened to take out the magnetic head substrate 60 from the sputtering apparatus 53. After the gate valve 56b is closed, the gate valve 56d is opened to place the magnetic head substrate 60 into the ECR-CVD apparatus 55. Load it. As described above, the substrate adapter 2 is set by the substrate holding mechanism 30 shown in FIG. 3, and ECR film formation is performed from below with the magnetic head substrate 60 facing downward. In the ECR-CVD apparatus 55, a DLC film is formed by a predetermined thickness on the deposition surface P on which the Si layer is formed by the ECR-CVD method. When the formation of the DLC film is completed, the gate valve 56d is opened to take out the magnetic head substrate 60 from the ECR-CVD apparatus 55. After the gate valve 56d is closed, the gate valve 56a is opened to load lock the magnetic head substrate 60. It is stored in the substrate cassette 57 in the chamber 52.

When film formation is completed for one substrate S in this way, similar film formation is performed for the second and subsequent substrates S set in the substrate cassette 57, and then the load lock chamber 52 is opened to the atmosphere. The substrate cassettes 57 and 58 are taken out. In the above-described series of film formation, etching, and transfer processes, the film formation surface of the substrate S is always set on the same substrate adapter 2 in a downward state.

In FIG. 5, the three film forming apparatuses 53 and 55 and the etching apparatus 54 are integrally connected through the common transfer chamber 51. However, the apparatuses 53 to 55 are independently connected without using the common transfer chamber 51. May be arranged. Also in this case, the film formation surface of the substrate is transferred downward between the apparatuses by the substrate adapter 2. In addition to the film forming apparatus such as the sputtering apparatus 53 and the ECR-CVD apparatus 55, the transfer chamber 51 is provided with an etching apparatus 54 necessary for a series of film forming processes. An apparatus necessary for such a series of film forming processes is also regarded as a film forming apparatus. Furthermore, the number of devices connected to the transfer chamber 51 is not limited to three.

It should be noted that each of the above embodiments is an example of the present invention, and it is obvious that changes and modifications can be made as appropriate within the scope of the gist of the present invention.

It is a figure which shows one Embodiment of the film-forming apparatus by this invention, and is a figure which shows schematic structure of an ECR-CVD apparatus. It is a perspective view of the board | substrate adapter 2 with which the board | substrate S was mounted | worn. It is explanatory drawing which showed the structure of the board | substrate holding mechanism by this invention. It is a figure explaining mounting | wearing to the clamp block 31 of the board | substrate adapter 2 by the board | substrate conveyance mechanism 21. FIG. It is a figure which shows the composite film-forming apparatus which integrated the several film-forming apparatus. It is explanatory drawing which showed the structure of the conventional board | substrate holding mechanism. It is a perspective view of the conventional board | substrate adapter 71. FIG.

Explanation of symbols

1 deposition chamber, 1a upper wall, 2 substrate adapter, 3 ECR plasma generator,
4 microwave source, 5 waveguide, 6 plasma chamber, 7 coil, 8 coil,
9 Plasma window, 10 Bias power supply, 11 Bias power supply,
12 matching unit, 13 voltage monitor, 14 reaction gas introduction part,
15 Exhaust pump, 16 Pressure gauge, 17 Control unit,
2b head part, 2c claw, 201 axis, 21 substrate transfer device,
30 substrate holding mechanism, 31 clamp block, 32 lifting mechanism,
33 housing, 34 stage, 311 long hole part, 35 elevating part,
35a inner wall
51 transfer chamber, 52 load lock chamber, 53 sputter device,
54 etching apparatus, 55 ECR-CVD apparatus, 56a-56d gate valve,
57 Substrate cassette

Claims (2)

  In a film formation apparatus including a film formation chamber for performing film formation with the film formation surface of the substrate held substantially vertically downward, a substrate adapter for fixing the substrate, and film formation of the substrate in the film formation chamber A clamp block that grips a part of the substrate adapter so that the surface is substantially vertically downward, and is coupled to the clamp block, and is moved up and down to move the substrate adapter held by the clamp block in the film forming chamber. An elevating mechanism for moving and fixing at a predetermined position in the film forming chamber, and a substrate holding mechanism constituted by an elevating unit for elevating a part of the substrate adapter held by the clamp block and the clamp block by the elevating operation. A film forming apparatus, wherein an inner wall of the elevating unit is formed of a single member.   2. The apparatus according to claim 1, further comprising a transport device that transports the substrate in a state where the film formation surface of the substrate is held substantially vertically downward between the film formation devices. Composite film forming equipment.

Images