JP2008270434A - Impurity diffusing method, monolithic semiconductor laser device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a monolithic semiconductor laser device and an impurity diffusing method capable of diffusing impurities into specific layers included in a plurality of semiconductor laser forming portions, respectively, in the same process, without affecting the device characteristics. <P>SOLUTION: In this impurity diffusing method, heating is carried out to diffuse the impurities after a first impurity containing object 54 is arranged in a first arrangement portion 71 in a first diffusion receiving region 56 in a first semiconductor laser forming portion 22A and a second impurity containing object 55 is arranged in a second arrangement portion 72 in a second diffusion receiving region 57 having an impurity diffusion speed higher than that of the first diffusion receiving region 56 in a second semiconductor laser forming portion 23A. Then, the ratio of one surface in the thickness direction of a first contact portion 73 of the first arrangement portion 71 in contact with the first impurity containing object 54 to the whole of the one surface in the thickness direction of the first arrangement portion 71 is made larger than the ratio of one surface in the thickness direction of a second contact portion 74 of the second arrangement portion 72 in contact with the second impurity containing object 55 to the whole of the one surface in the thickness direction of the second arrangement portion 72. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a monolithic semiconductor laser device in which a plurality of semiconductor laser components are provided on one substrate, a method for manufacturing the same, and an impurity diffusion method used therefor.

  In recent years, CD (Compact Disk) and DVD (Digital Versatile Disk) have been widely used as recording media for digital information such as music and video, and demand for semiconductor laser elements as optical pickup light sources for CD and DVD recording / reproducing apparatuses has been increasing. Is growing. In a recording / reproducing apparatus compatible with both CD and DVD, a monolithic type in which two semiconductor laser components for CD and DVD are provided on one substrate in order to simplify and miniaturize the optical system. A semiconductor laser element is required.

  FIG. 11 is a cross-sectional view showing the monolithic semiconductor laser element 1. The monolithic semiconductor laser device 1 includes a first semiconductor laser component 2 having an oscillation wavelength of 780 nm as an optical pickup light source for CD, and a second semiconductor laser component having an oscillation wavelength of 650 nm as an optical pickup light source for DVD. 3 is provided. The first active layer 4a of the first semiconductor laser component 2 is made of an aluminum-gallium-arsenic (AlGaAs) based compound semiconductor material, and the active layer 5a of the second semiconductor laser component 3 is made of aluminum-gallium-indium- It is formed of a phosphorus (AlGaInP) based compound semiconductor material.

  In order to reliably record information on both the CD and the DVD, the semiconductor laser components 2 and 3 are required to stably run at an output of 200 mW or more. In order to achieve this, each of the semiconductor laser components 2 and 3 is required to suppress heat generation at the resonator end face portion and improve reliability. In order to suppress the heat generation at the resonator end face, a window structure region that allows the laser light generated inside to be transmitted to the outside without being absorbed is formed on each resonator end face.

  In the manufacturing method of the monolithic semiconductor laser element of the prior art, after forming the light emitting layers 4 and 5 of the respective semiconductor laser constituting portions 2 and 3 on one surface portion in the thickness direction of the N-type substrate 11, a window structure region is formed, Further, the ridges 6 and 7 are formed, and the insulating layer 8 and the P-side electrode 9 are formed. Further, the N-side electrode 10 is formed on the other surface portion in the thickness direction of the N-type substrate 11 to obtain the monolithic semiconductor laser device 1.

  In the window structure region, a zinc oxide (ZnO) film is formed only in a region where the window structure region of the resonator end face is to be formed and heated, and zinc (Zn) is diffused from the ZnO film to the active layers 4a and 5a. Formed by. The first semiconductor laser component 2 and the second semiconductor laser component 3 are different in the constituent elements of the light emitting layers 4 and 5, particularly the active layers 4 a and 5 a, and therefore have different Zn diffusion rates. Therefore, since the heating time required for diffusing Zn so as to have a constant concentration with respect to the active layers 4a and 5a is different, the step of diffusing Zn into the active layer 4a of the first semiconductor laser component 2 and the second semiconductor It is difficult to simultaneously perform the Zn diffusion step for the active layer 5a of the laser component 3.

  In order to simultaneously perform the Zn diffusion step, there is a technique in which a diffusion control layer is provided in each semiconductor laser component to adjust the impurity diffusion rate in the light emitting layer (see, for example, Patent Document 1).

Japanese Patent Laid-Open No. 2002-26447 (page 7-9, FIG. 4)

  In the technique disclosed in Patent Document 1, since the diffusion control layer is provided separately from the active layer contributing to light emission, there arises a problem that the element resistance increases.

  An object of the present invention is to manufacture a monolithic semiconductor laser device capable of diffusing impurities in the same process without affecting device characteristics with respect to a specific layer included in a plurality of semiconductor laser components It is to provide a method and an impurity diffusion method used therefor.

According to the present invention, a first target portion including a first semiconductor layer formed of a semiconductor material and a second target portion including a second semiconductor layer formed of a semiconductor material different from the first semiconductor layer are provided. Among the objects to be processed provided on one surface portion in the thickness direction of the substrate, a first diffusion region predetermined in the first processing part including at least a part of the first semiconductor layer and at least a part of the second semiconductor layer are provided. And an impurity diffusion method for diffusing the impurity in a second diffusion region that is predetermined in the second target portion and has a higher impurity diffusion rate than the first diffusion region,
Of the one surface portion in the thickness direction of the first processed portion, the first impurity-containing body containing the impurity is arranged in the first arrangement portion included in the first diffusion region, and the thickness direction of the second processed portion An impurity-containing body disposing step of disposing a second impurity-containing body containing the impurity in a second disposition portion included in the second diffusion region in one surface portion;
Diffusion in which the first diffusion region in which the first impurity-containing body is disposed and the second diffusion region in which the second impurity-containing body is disposed are heated to diffuse the impurities in the first and second diffusion regions. Process,
The proportion of the first contact portion in contact with the first impurity-containing body in the thickness direction in the first arrangement portion in the entire thickness direction of the first arrangement portion is the second impurity in the second arrangement portion. The impurity diffusion method is characterized in that the surface in the thickness direction of the second contact portion in contact with the inclusion body is larger than the ratio of the entire surface in the thickness direction of the second arrangement portion.

  According to the present invention, in the impurity-containing body arranging step, the one surface portion in the thickness direction of the first processing portion is provided on the surface of the substrate in which the first and second processing portions are provided on the one surface portion in the thickness direction of the substrate. The first impurity-containing body is arranged in the first arrangement portion included in the first diffusion region, and the second arrangement included in the second diffusion region in one surface portion in the thickness direction of the second processing portion. A second impurity-containing body is disposed in the portion. Thus, the 1st and 2nd to-be-diffused area | region in which the 1st and 2nd impurity containing body was formed is heated by a diffusion process, and an impurity is diffused in the 1st and 2nd to-be-diffused area. The ratio of the first contact portion in contact with the first impurity-containing body in the thickness direction in the first arrangement portion to the entire one surface in the thickness direction of the first arrangement portion (hereinafter referred to as “first impurity-containing body ratio”) is The ratio of the second contact portion in contact with the second impurity-containing body in the second arrangement portion to the entire surface in the thickness direction of the second arrangement portion (hereinafter referred to as “second impurity-containing body ratio”) is larger.

  Thus, since the first impurity-containing body ratio is larger than the second impurity-containing body ratio, when the first and second diffusion regions are heated in the diffusion process, the unit area of one surface in the thickness direction of the second arrangement portion The amount of impurities supplied per unit (hereinafter referred to as “second impurity average supply amount”) is defined as the amount of impurities supplied per unit area on the surface in the thickness direction of the first arrangement portion (hereinafter referred to as “first impurity average supply”). Less than “amount”). Thereby, when the diffusion rate of the impurity in the second diffusion region is higher than the diffusion rate of the impurity in the first diffusion region, the time required for the impurity to diffuse from the first impurity containing body to the first semiconductor layer. And the time required for impurities to diffuse from the second impurity-containing body to the second semiconductor layer can be suppressed. Therefore, by heating the first and second diffusion regions in the diffusion step, both the portion included in the first diffusion region of the first semiconductor layer and the portion included in the second diffusion region of the second semiconductor layer On the other hand, it is possible to diffuse impurities.

In the present invention, the impurity-containing body arranging step
An impurity layer forming step of forming an impurity layer containing the impurity so as to cover the first and second arrangement portions;
The first and second impurity layers formed on the remaining portion excluding the first contact portion in the first arrangement portion and the remaining portion excluding the second contact portion in the second arrangement portion are removed. And a removal step of forming an impurity-containing body.

  According to the present invention, the impurity layer is formed so as to cover the first and second arrangement portions in the impurity layer formation stage, and the remaining of the formed impurity layers except the first contact portion in the first arrangement portion. The first and second impurity containing bodies are formed by removing the impurity layer formed in the remaining portion excluding the second contact portion in the portion and the second arrangement portion in the removing step. Thereby, the first and second impurity-containing bodies can be formed in a lump.

Further, according to the present invention, the first processing target is a first semiconductor in which a first active layer that is a first semiconductor layer and two first cladding layers that sandwich the first active layer are stacked in the thickness direction of the substrate. A laser component,
The second processed part is a second semiconductor laser constituent part in which a second active layer that is a second semiconductor layer and two second clad layers that sandwich the second active layer are stacked in the thickness direction of the substrate. It is characterized by that.

  According to the present invention, a first semiconductor laser constituting unit in which a first active layer that is a first semiconductor layer and two first cladding layers that sandwich the first active layer are stacked in the thickness direction of the substrate; A second semiconductor laser component in which a second active layer, which is a semiconductor layer, and two second cladding layers sandwiching the second active layer are stacked in the thickness direction of the substrate is provided on one surface portion in the thickness direction of the substrate. The first and second impurity-containing bodies are arranged in the impurity-containing body arranging step with respect to the object to be processed. The first and second diffusion regions where the first and second impurity-containing bodies are disposed are heated in the diffusion process, and the impurities are diffused into the first and second diffusion regions.

  Since the first impurity-containing body ratio in the first semiconductor laser constituent part that is the first processed part is larger than the second impurity-containing body ratio in the second semiconductor laser constituent part that is the second processed part, When the first and second diffusion regions are heated, the second impurity average supply amount, which is the amount of impurities supplied per unit area of one surface in the thickness direction of the second arrangement portion, is set to the thickness of the first arrangement portion. The first impurity average supply amount, which is the amount of impurities supplied per unit area of one surface in the direction, can be reduced. Thus, by heating the first and second diffusion regions in the diffusion step, the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer Since impurities can be diffused in both, the energy band gap is increased by disordering the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer. It is possible to enlarge the window structure region in both the first and second active layers.

In the present invention, each of the first and second active layers is formed in a quantum well structure including a well layer and a barrier layer having a larger energy band gap than the well layer.
The impurity is zinc (Zn).

  According to the present invention, the first and second active layers are formed in a quantum well structure including a well layer and a barrier layer. Of the first and second active layers of this quantum well structure, zinc (Zn) is diffused as an impurity in the portions included in the first and second diffusion regions. As a result, the quantum well structures of the first and second active layers in the portions included in the first and second diffusion regions are destroyed and disordered, and the energy band gap in this portion is changed into the first and second diffusion regions. A window structure region is formed which is larger than the energy band gaps of the first and second active layers included in the remaining region excluding the region and allows the laser light generated in the remaining region to pass through without being absorbed. In the present invention, it is possible to diffuse zinc in both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer in the diffusion step. In the diffusion step, the window structure region can be formed at the same time.

In the present invention, of the two first cladding layers, the first cladding layer interposed between the first active layer and the first impurity-containing body is Al _x1 Ga _y1 In _1-x1-y1 P (0 <X1 <1,0 <y1 <1, x1 + y1 <1) formed by an aluminum-gallium-indium-phosphorus compound semiconductor material,
Of the two second cladding layers, the second cladding layer interposed between the second active layer and the second impurity-containing body is Al _x2 Ga _y2 In _1-x2-y2 P (0 <x2 <1, It is formed by an aluminum-gallium-indium-phosphorus compound semiconductor material represented by 0 <y2 <1, x2 + y2 <1).

According to the present invention, the first cladding layer interposed between the first active layer and the first impurity-containing body is Al _x1 Ga _y1 In _1-x1-y1 P (0 <x1 <1, 0 <y1 < 1, x1 + y1 <1), and the second cladding layer interposed between the second active layer and the second impurity-containing body is Al _x2 Ga _y2 In _1-x2-y2 P (0 <x2 <1, 0 <y2 <1, x2 + y2 <1). As described above, since the first and second cladding layers interposed between the active layer and the impurity-containing body are formed of a semiconductor material containing the same element, impurities are introduced into the first and second cladding layers at a constant rate. Can be diffused. This can prevent a difference in impurity diffusion rate between the first and second cladding layers, so that the impurity diffusion rate in the first active layer is lower than the impurity diffusion rate in the second active layer. In addition, by making the first impurity-containing body ratio larger than the second impurity-containing body ratio, the portion included in the first diffusion region of the first active layer and the second diffusion region of the second active layer are included. It is possible to diffuse impurities more reliably in both parts by the diffusion process.

According to the present invention, the first active layer is formed of an aluminum-gallium-arsenic compound semiconductor material represented by Al _h Ga _1-h As (0 <h <1),
The second active layer is made of an aluminum-gallium-indium-phosphorus compound semiconductor material represented by Al _j Ga _k In _1-j-k P (0 ≦ j <1, 0 <k <1, j + k <1). It is formed.

According to the present invention, the first active layer is formed of Al _h Ga _1-h As (0 <h <1), and the second active layer is Al _j Ga _k In _1-j-k P (0 ≦ j < 1,0 <k <1), a first semiconductor laser component that emits a laser beam having a wavelength of 780 nm from the first active layer is realized, and a laser beam having a wavelength of 650 nm is emitted from the second active layer. A second semiconductor laser component is realized. Al _h Ga _1-h As (0 <h <1) that forms the first active layer is Al _j Ga _k In _1-jk P (0 ≦ j <1,0) that forms the second active layer. Although the impurity diffusion coefficient is smaller than <k <1, j + k <1), the first impurity-containing body ratio is larger than the second impurity-containing body ratio, so that the first and second diffusion regions in the diffusion process The window structure region is formed by diffusing impurities in both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer by heating. Is possible.

In the present invention, the ratio of the surface in the thickness direction of the first contact portion to the entire surface in the thickness direction of the first arrangement portion is the ratio of the surface in the thickness direction of the second contact portion to the entire surface in the thickness direction of the second arrangement portion. The inclusion body area ratio divided by the ratio of occupying is 8 or more and 20 or less,
The dimension in the thickness direction of the first and second impurity-containing bodies is 30 nm to 300 nm.

According to the present invention, the inclusion body area ratio obtained by dividing the first impurity-containing body ratio by the second impurity-containing body ratio is 8 or more and 20 or less, and the dimension in the thickness direction of the first and second impurity-containing bodies (hereinafter, The “thickness dimension” is 30 nm or more and 300 nm or less. The first active layer is formed of Al _h Ga _1-h As (0 <h <1), and the second active layer is Al _j Ga _k In _1-jk P (0 ≦ j <1, 0 <k < 1, j + k <1), if the inclusion body area ratio is less than 8, the difference between the second impurity average supply amount and the first impurity average supply amount is not sufficient, and the first activity in the diffusion step The time required for the impurity to be diffused to the layer is excessively longer than the time required for the impurity to be diffused to the second active layer, and is included in the corresponding diffusion regions of the first and second active layers. There is a possibility that impurities cannot be diffused into the portion at the same time. When the inclusion area ratio exceeds 20, the second impurity average supply amount becomes excessively smaller than the first impurity average supply amount, and the time required for the impurity to diffuse to the second active layer is There is a possibility that the impurity is excessively longer than the time required for the impurity to be diffused to the layer, and the impurity cannot be simultaneously diffused into the portion included in the corresponding diffusion region of the first and second active layers. By making the inclusion area ratio 8 or more and 20 or less as described above, the difference between the first impurity average supply amount and the second impurity average supply amount can be made suitable. The difference between the time required for the impurity to diffuse and the time required for the impurity to diffuse to the second active layer is suppressed, and the first diffusion region of the first active layer is heated by the diffusion process. The impurity can be more reliably diffused into both the portion included in the portion and the portion included in the second diffusion region of the second active layer.

  If the first and second impurity-containing bodies have a thickness dimension of less than 30 nm and the first and second impurity-containing bodies have uneven thickness, the first and second diffusion regions are affected by the uneven thickness. There is a risk that the amount of impurities supplied to the substrate will be uneven. When the thickness dimension of the first and second impurity-containing bodies exceeds 300 nm, the dimensional accuracy in the process of forming the first and second impurity-containing bodies decreases, causing variations in the formation of the window structure region. As described above, by setting the thickness dimension of the first and second impurity-containing bodies to 30 nm or more and 300 nm or less, the first and second impurity-containing bodies with respect to the amount of impurities supplied to the first and second diffusion regions are set. The influence of thickness unevenness can be eliminated. Further, the dimensional accuracy of the first and second impurity-containing bodies can be increased, and variations in the formation of the window structure region can be suppressed. As a result, the amount of the impurity supplied to the portion included in the corresponding diffusion region of the first and second semiconductor laser constituent portions is determined by the first and second surfaces corresponding to one surface in the thickness direction of the first and second contact portions. It can adjust more reliably based on the ratio which occupies for the whole surface of the thickness direction of 2 arrangement | positioning parts. Therefore, the inclusion body area ratio is set to 8 or more and 20 or less, and the thickness dimension of the first and second impurity containing bodies is set to 30 nm or more and 300 nm or less, so that it is included in the first diffusion region of the first active layer in the diffusion step. The impurity can be more reliably diffused into both the portion to be included and the portion included in the second diffusion region of the second active layer.

  In the diffusion step, the first and second diffusion regions are heated at a temperature of 600 ° C. to 640 ° C. for 30 minutes to 180 minutes.

  According to the present invention, in the diffusion step, the first and second diffusion regions where the first and second impurity-containing bodies are arranged are heated at a temperature of 600 ° C. to 640 ° C. for 30 minutes to 180 minutes. When the heating temperature of the first and second diffusion regions is less than 600 ° C., the diffusion rate of impurities in the first diffusion region becomes excessively lower than the diffusion rate of impurities in the second diffusion region, and the diffusion step Even if the first and second diffusion regions are heated in step 1, both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer Impurities may not be diffused. When the heating temperature of the first and second diffusion regions exceeds 640 ° C., impurities diffuse into the regions outside the first and second diffusion regions, or in each layer included in the first and second semiconductor laser components. Crystal defects may occur. When the heating time of the first and second diffusion regions is less than 30 minutes, the time during which impurities are diffused in the first and second diffusion regions is insufficient, and the first activity is caused by heating in the diffusion process. There is a possibility that impurities cannot be diffused over the entire portion of the layer included in the first diffusion region and the portion of the second active layer included in the second diffusion region. When the heating time of the first and second diffusion regions exceeds 180 minutes, impurities diffuse into the regions outside the first and second diffusion regions, or in each layer included in the first and second semiconductor laser components. Crystal defects may occur.

  As described above, the heating temperature of the first and second diffusion regions is 600 ° C. or more and 640 ° C. or less, and the heating time of the first and second diffusion regions is 30 minutes or more and 180 minutes or less. By heating the first and second diffusion regions of the first active layer, both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer Thus, the impurities can be more reliably diffused. In addition, it is possible to suppress the diffusion of impurities to the regions outside the first and second diffusion regions, and to suppress the generation of crystal defects in the respective layers constituting the first and second semiconductor laser components.

Further, the present invention is a method for manufacturing a monolithic semiconductor laser device, wherein the first and second semiconductor laser constituent portions are provided on one surface portion in the thickness direction of the substrate,
A first semiconductor laser component is formed by laminating a first active layer formed of a semiconductor material and two first cladding layers sandwiching the first active layer in the thickness direction of the substrate on one surface portion in the thickness direction of the substrate. A second semiconductor laser structure is formed by stacking a second active layer formed of a semiconductor material different from the first active layer and two second cladding layers sandwiching the second active layer in the thickness direction of the substrate. A preparation step in which a first and second semiconductor laser components are provided on a surface portion in the thickness direction of the substrate;
A first diffusion region predetermined in the first semiconductor laser component including one end of the first active layer in the resonator direction perpendicular to the thickness direction of the substrate, and one end of the second active layer in the resonator direction The second and second active layers are diffused into a second diffusion region having a diffusion rate higher than that of the first diffusion region. A window structure region forming step of forming a window structure region at one end,
In the window structure region forming step, the impurity is diffused by the impurity diffusion method of the present invention, which is a method for manufacturing a monolithic semiconductor laser device.

  According to the present invention, in the preparation step, the first active layer and the two first cladding layers sandwiching the first active layer are laminated in the thickness direction of the substrate on the one surface portion in the thickness direction of the substrate. A laser component is formed, a second active layer and two second cladding layers sandwiching the second active layer are stacked in the thickness direction of the substrate to form a second semiconductor laser component, and the first and second An object to be processed in which a semiconductor laser component is provided on one surface portion in the thickness direction of the substrate is prepared. Among the prepared objects to be processed, a first diffusion region including one end of the first active layer of the first semiconductor laser component in the resonator direction and a resonator of the second active layer of the second semiconductor laser component Impurities are diffused into the second diffusion region including one end in the direction in the window structure region forming step, and a window structure region is formed at one end in the resonator direction of the first and second active layers. In the window structure region forming step, since impurities are diffused by the impurity diffusion method of the present invention, the first and second diffusion regions where the first and second impurity containing bodies are disposed are heated in the diffusion step. The window structure region can be formed simultaneously by diffusing impurities in both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer. Therefore, after the window structure region is formed in one of the first and second active layers, the manufacturing process can be simplified as compared with the case where the window structure region is formed in the other active layer. A monolithic semiconductor laser element can be easily manufactured.

  The present invention is also a monolithic semiconductor laser device manufactured by the method for manufacturing a monolithic semiconductor laser device of the present invention.

  According to the present invention, the monolithic semiconductor laser device is manufactured by the excellent method for manufacturing a monolithic semiconductor laser device of the present invention as described above.

  According to the present invention, the proportion of the first contact portion in contact with the first impurity-containing body in the thickness direction on the entire surface in the thickness direction of the first arrangement portion is the thickness of the second portion in contact with the second impurity-containing body. The amount of impurities supplied per unit area of one surface in the thickness direction of the first arrangement portion is set to be larger than the ratio of the one surface in the direction to the entire surface in the thickness direction of the second arrangement portion. The amount of impurities supplied per unit area of one surface in the thickness direction can be increased. Thereby, when the diffusion rate of the impurity in the second diffusion region is higher than the diffusion rate of the impurity in the first diffusion region, the first and second diffusion regions in which the first and second impurity containing bodies are arranged. Is heated in the diffusion step, so that the portion included in the first diffusion region of the first semiconductor layer of the first processed portion and the portion included in the second diffusion region of the second semiconductor layer of the second processed portion Impurities can be diffused for both. Therefore, the step of diffusing impurities into the portion of the first semiconductor layer included in the first diffusion region and the step of diffusing the impurity into the portion of the second semiconductor layer included in the second diffusion region are performed separately. Compared to the above, it is possible to simplify the steps required to diffuse the impurities.

  According to the invention, the impurity layer is formed so as to cover the first and second arrangement portions in the impurity layer formation stage, and the remaining portion and the second arrangement excluding the first contact portion in the first arrangement portion. The first and second impurity-containing bodies are collectively formed by removing the impurity layer formed in the remaining portion of the portion excluding the second contact portion to form the first and second impurity-containing bodies. Therefore, the process required for diffusing impurities can be further simplified.

  Further, according to the present invention, the first processed portion includes a first active layer that is a first semiconductor layer and two first cladding layers that sandwich the first active layer, which are stacked in the thickness direction of the substrate. The second laser processing unit includes a second active layer, a second active layer that is a second semiconductor layer, and two second cladding layers that sandwich the second active layer in a thickness direction of the substrate. This is a semiconductor laser component. With respect to such an object to be processed, a first impurity-containing body is disposed in a first arrangement portion included in the first diffusion region in one surface portion in the thickness direction of the first semiconductor laser component, and the second semiconductor The thickness direction of the first contact portion in contact with the first impurity-containing body when the second impurity-containing body is arranged in the second arrangement portion included in the second diffusion region in one surface portion in the thickness direction of the laser component The second contact of the first impurity-containing body, which is the ratio of one surface to the entire surface in the thickness direction of the first arrangement portion, in contact with the second impurity-containing body in the second arrangement portion of the second semiconductor laser component Heating the first and second regions to be diffused in the diffusion step by making the one surface in the thickness direction of the portion larger than the ratio of the second impurity-containing body, which is the proportion of the entire surface in the thickness direction of the second arrangement portion. In the first diffusion region of the first active layer Murrell part and by diffusing impurities into both the second portion contained in the diffusion region of the second active layer, it is possible to form a window structure region. By forming the window structure region in one of the first and second semiconductor layers by forming the window structure region using such an impurity diffusion method of the present invention, the window structure region is formed in the other semiconductor layer. As compared with the case where the first and second semiconductor laser components are formed, it is possible to simplify the process of manufacturing the monolithic semiconductor laser device in which the first and second semiconductor laser components are provided on one substrate. It can be easily manufactured.

  Further, according to the present invention, the first and second active layers are formed in a quantum well structure, and the first and second active layers include the first and second diffusion layers in the first and second diffusion regions. When diffusing zinc (Zn) as an impurity from the second impurity-containing body, the first impurity-containing body ratio is made larger than the second impurity-containing body ratio, so that the first and second diffusion regions in the diffusion process As a result of this heating, the quantum well structures of the first and second active layers in the portions included in the first and second diffusion regions can be destroyed and disordered, and the window structure region can be formed simultaneously. By using such an impurity diffusion method, the manufacturing process of the monolithic semiconductor laser device in which the window structure regions are formed in the first and second active layers of the quantum well structure can be simplified, and the monolithic semiconductor laser device can be easily manufactured. It is possible to manufacture.

According to the invention, the first cladding layer interposed between the first active layer and the first impurity-containing body is formed of Al _x1 Ga _y1 In _1-x1-y1 P (0 <x1 <1, 0 <y1). <1, x1 + y1 <1), and a second cladding layer interposed between the second active layer and the second impurity-containing body is formed as Al _x2 Ga _y2 In _1-x2-y2 P (0 <x2 <1 , 0 <y2 <1, x2 + y2 <1), it is possible to prevent a difference in impurity diffusion rate between the first and second cladding layers, so that the impurity diffusion rate in the first active layer Is lower than the diffusion rate of the impurities in the second active layer, the diffusion step is performed on the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer. To diffuse impurities more reliably by heating Possible it is. Therefore, the window structure region can be more reliably formed on both the first and second active layers by heating in the diffusion process.

According to the present invention, the first active layer is made of Al _h Ga _1-h As (0 <h <1), and the second active layer is made of Al _j Ga _k In _1-jk P (0 ≦ j By forming <1, 0 <k <1, j + k <1), a first semiconductor laser component that emits a laser beam having a wavelength of 780 nm from the first active layer is realized, and a wavelength of 650 nm is generated from the second active layer. The second semiconductor laser component that emits the laser beam can be realized. In the first arrangement portion included in the first diffusion region of the first semiconductor laser component, the ratio of one surface in the thickness direction of the first contact portion to the entire one surface in the thickness direction of the first arrangement portion is second. Of the second arrangement portion included in the second diffusion region of the semiconductor laser component, the one surface in the thickness direction of the second contact portion is larger than the ratio of the entire one surface in the thickness direction of the second arrangement portion. Then, it is possible to form the window structure region by diffusing impurities in both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer. It is. By using such an impurity diffusion method, the manufacturing process is simplified, and a monolithic type that emits laser light having a wavelength of 780 nm from the first semiconductor laser component and emits laser light having a wavelength of 650 nm from the second semiconductor laser component. A semiconductor laser device can be easily manufactured.

According to the invention, the first active layer of the first semiconductor laser component is formed of Al _h Ga _1-h As (0 <h <1), and the second active layer of the second semiconductor laser component is Al. _{When formed with j} Ga _k In _1-jk P (0 ≦ j <1, 0 <k <1, j + k <1), the first impurity-containing body ratio of the first semiconductor laser component is set to the second In the diffusion step, the inclusion area ratio divided by the second impurity containing body ratio of the semiconductor laser component is 8 or more and 20 or less, and the thickness dimension of the first and second impurity containing bodies is 30 nm or more and 300 nm or less. Impurities can be more reliably diffused into both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer. Therefore, the window structure region can be more reliably formed by heating in the diffusion process for both the first active layer and the second active layer.

  According to the invention, in the diffusion step, the first and second diffusion regions where the first and second impurity-containing bodies are arranged are heated at a temperature of 600 ° C. to 640 ° C. for 30 minutes to 180 minutes. The impurities can be more reliably diffused into both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer. Therefore, the window structure region can be more reliably formed on both the first and second active layers by heating in the diffusion process.

  According to the invention, the first and second diffusion regions in the diffusion step are diffused by diffusing the impurities in the diffusion regions corresponding to the first and second semiconductor laser components by the impurity diffusion method of the invention. The window structure region is formed by diffusing impurities in both the portion included in the first diffusion region of the first active layer and the portion included in the second diffusion region of the second active layer. be able to. Therefore, since the manufacturing process can be simplified, the monolithic semiconductor laser element can be easily manufactured.

  According to the present invention, the monolithic semiconductor laser element in which the first and second semiconductor laser constituent portions are provided on one surface portion in the thickness direction of the substrate is manufactured as described above. A monolithic semiconductor laser element in which a window structure region is formed at one end in the cavity direction of the first active layer of the first semiconductor laser component and the second active layer of the second semiconductor laser component by manufacturing the method Can be easily realized.

  FIG. 1 is a sectional view showing a semiconductor laser device 20 manufactured by the manufacturing method of the first embodiment of the present invention. The semiconductor laser element 20 is a monolithic semiconductor laser element, and includes a semiconductor substrate 21 and a plurality of laser element portions 22 and 23. In the present embodiment, the semiconductor laser element 20 includes two laser element units, that is, a first laser element unit 22 and a second laser element unit 23.

  The semiconductor substrate 21 is formed in a plate shape, and the first and second laser element portions 22 and 23 are provided on one surface portion on the Z1 side in the thickness direction, which is one surface portion in the thickness direction. As will be described later, the first laser element unit 22 includes a first semiconductor laser component 22A, and the second laser element unit 23 includes a second semiconductor laser component 23A. The semiconductor laser element 20 is a monolithic semiconductor laser element in which the first and second semiconductor laser constituting parts 22A and 23A are provided on one surface part in the thickness direction of the semiconductor substrate 21.

  In the present embodiment, the semiconductor substrate 21 is an N-type semiconductor substrate, and is realized by, for example, a gallium arsenide (GaAs) substrate. Hereinafter, one thickness direction Z1 of the semiconductor substrate 21 is simply referred to as the thickness direction one Z1, and the other thickness direction Z2 of the semiconductor substrate 21 opposite to the thickness direction one Z1 is simply referred to as the other thickness direction Z2. The thickness direction Z is referred to as including the other thickness direction Z2.

The first laser element unit 22 and the second laser element unit 23 have different oscillation wavelengths. In the present embodiment, the first laser element unit 22 includes an aluminum-gallium-arsenic (AlGaAs) -based compound semiconductor material in which the first active layer 34 is represented by Al _h Ga _1-h As (0 <h <1). And an oscillation wavelength in the 780 nm band. The second laser element unit 23 is realized by an AlGaInP-based semiconductor laser element unit in which the second active layer 44 is formed of an aluminum-gallium-indium-phosphorus (AlGaInP) -based compound semiconductor material, and has an oscillation wavelength in the 650 nm band. . The “780 nm band” means a wavelength band from 765 nm to 775 nm, and the “650 nm band” means a wavelength band from 645 nm to 655 nm.

  The first laser element unit 22 includes a first semiconductor laser component 22A, a dielectric film 24, a first P-side electrode 25, and an N-side electrode 27. The first semiconductor laser component 22A includes a first N-type buffer layer 31, a first N-type cladding layer 32, a first N-side guide layer 33, a first active layer 34, which are sequentially stacked on one surface in the thickness direction of the semiconductor substrate 21. A first P-side guide layer 35, a first first P-type cladding layer 36, a first etching marker layer 37, a second first P-type cladding layer 38 and a first P-type cap layer 39 are included. The first active layer 34 corresponds to a first semiconductor layer.

  The second laser element unit 23 includes a second semiconductor laser component 23A, a dielectric film 24, a second P-side electrode 26, and an N-side electrode 27. The second semiconductor laser component 23A includes a second N-type buffer layer 41, a second N-type cladding layer 42, a second N-side guide layer 43, a second active layer 44, which are sequentially stacked on one surface in the thickness direction of the semiconductor substrate 21. A second P-side guide layer 45, a first second P-type cladding layer 46, a second etching marker layer 47, a second second P-type cladding layer 48, an intermediate layer 49, and a second P-type cap layer 50 are included. The second active layer 44 corresponds to a second semiconductor layer.

  The first and second semiconductor laser components 22A and 23A are provided to extend in one direction X perpendicular to the thickness direction Z. Laser light is emitted in the extending direction of the first and second semiconductor laser components 22A and 23A. Hereinafter, the extending direction X of the first and second semiconductor laser components 22A and 23A is referred to as “resonator direction”. The first semiconductor laser component 22A and the second semiconductor laser component 23A are arranged side by side with a space in the direction Y perpendicular to the resonator direction X and the thickness direction Z. Hereinafter, the direction in which the first and second semiconductor laser constituting units 22A and 23A are arranged is referred to as an “arrangement direction” Y.

  The active layers 34 and 44 of the first and second semiconductor laser constituting units 22A and 23A are arranged at the end of one side X1 in the resonator direction X, in FIG. 44a. FIG. 1 shows a cross-sectional configuration of an end portion on the X1 side in the resonator direction where the window structure regions 34a and 44a are formed. The window structure regions 34a and 44a of the respective active layers 34 and 44 have a larger energy gap than the remaining regions of the active layers 33 and 44 other than the window structure regions 34a and 44a. The laser beam generated at the intermediate portion between both ends in the resonator direction X is transmitted to the outside without being absorbed. By providing such window structure regions 34a and 44a, heat generation at one end of the first and second semiconductor laser constituting units 22A and 23A in the resonator direction is suppressed, and even if the output is, for example, 200 mW or more, it is stable. Thus, the first and second laser element portions 22 and 23 capable of emitting light can be realized.

  The N-side electrode 27 is common to the first laser element portion 22 and the second laser element portion 23, and is provided on the other surface portion in the thickness direction of the semiconductor substrate 21 over the first and second laser element portions 22 and 23. The dielectric film 24 is provided over the first and second laser element portions 22 and 23, and a portion of the first semiconductor laser constituting portion 22A excluding one surface portion in the thickness direction of the first ridge portion 28, the second semiconductor laser constituting portion 23A. The portion of the second ridge portion 29 excluding the one surface portion in the thickness direction and the portion of the semiconductor substrate 21 where the first and second semiconductor laser constituting portions 22A and 23A are not provided are covered.

  The first and second P-side electrodes 25 and 26 include first electrode layers 25a and 26a and second electrode layers 25b and 26b, respectively. The first electrode layer 25a of the first P-side electrode 25 has a thickness that covers one surface portion in the thickness direction of the first ridge portion 28 of the first semiconductor laser component 22A and the first semiconductor laser component 22A of the dielectric film 24. It is provided over one surface part in the direction. The first electrode layer 26a of the second P-side electrode 26 has a thickness that covers one surface portion in the thickness direction of the second ridge portion 29 of the second semiconductor laser component 23A and the second semiconductor laser component 23A of the dielectric film 24. It is provided over one surface part in the direction. The second electrode layers 25b and 26b are provided on one surface portion in the thickness direction of the corresponding first electrode layers 25a and 26a.

  FIG. 2 is a flowchart showing a method for manufacturing the semiconductor element 20 according to the first embodiment of the present invention. 3-10 is a figure which shows each manufacturing process in the manufacturing method of 1st Embodiment. 3 to 5 and 7 to 9 are sectional views, and FIGS. 6 and 10 are perspective views. 6 corresponds to FIG. 5, the sectional view taken along the cutting plane line S7-S7 in FIG. 6 corresponds to FIG. 7, and the sectional view taken along the cutting plane line S9-S9 in FIG. Corresponds to FIG. The manufacturing process proceeds in the order of FIGS. 3 to 5 and 7 to 9. 3 to 5 and 7 to 9 schematically show cross-sectional views for facilitating understanding, and exaggerate the thickness dimensions of each layer.

  First, in step a1, when materials and apparatuses necessary for manufacturing are prepared, the process proceeds to step a2 to start manufacturing work. In the present embodiment, a plurality of monolithic semiconductor laser elements 20 are manufactured simultaneously. In the preparation step of step a2, an object to be processed (hereinafter also referred to as “wafer”) 51 in which the first and second semiconductor laser components 22A and 23A are provided on one surface in the thickness direction of the semiconductor substrate 21 is prepared. A first laser component arrangement region 52 in which the first semiconductor laser component 22A is arranged and a second laser component arrangement in which the second semiconductor laser component 23A is arranged on one surface portion in the thickness direction of the semiconductor substrate 21. An area 53 is preset. The first and second laser component arrangement regions 52 and 53 are set to a part of one surface portion in the thickness direction of the semiconductor substrate 21. The second laser component arrangement region 53 is a region other than the first laser component arrangement region 54 in one surface portion in the thickness direction of the semiconductor substrate 21 and is adjacent to the first laser component arrangement region 52. is there.

  In step a2, specifically, the first and second semiconductor laser constituting portions 22A and 23A are formed on one surface portion in the thickness direction of the semiconductor substrate 21 to form the object to be processed 51. More specifically, first, as shown in FIG. 3, a film such as a metal organic chemical vapor deposition (abbreviated as MOCVD) apparatus is formed on one surface in the thickness direction of the N-type semiconductor substrate 21. Depending on the device, each layer constituting the first semiconductor laser component 22A, that is, the first N-type buffer layer 31, the first N-type cladding layer 32, the first N-side guide layer 33, the first active layer 34, the first P-side guide layer 35, A first first P-type cladding layer 36, a first etching marker layer 37, a second first P-type cladding layer 38, and a first P-type cap layer 39 are formed by epitaxial growth sequentially. In this way, the layers constituting the first semiconductor laser constituting portion 22A are formed by being laminated in the thickness direction of the semiconductor substrate 21. Each layer constituting the first semiconductor laser component 22A is formed over the entire surface in the thickness direction of the semiconductor substrate 21 including the first and second laser component arrangement regions 52 and 53.

Each layer constituting the first semiconductor laser component 22A is formed of a semiconductor material, specifically, a compound semiconductor material. In the present embodiment, the N-type semiconductor substrate 21 is realized by an N-type GaAs substrate, the first N-type buffer layer 31 is realized by an N-type GaAs layer, and the first N-type cladding layer 32 is an N-type Al _m Ga _1-m. An As (0 <m <1) layer is realized, the first N-side guide layer 33 is realized by an Al _m Ga _1-m As (0 <m <1) layer, and the first P-side guide layer 35 is an Al _m Ga ₁ layer. It is realized by _{-m As (0 <m <1} ) layer, a first second 1P type cladding layer 36 P-type _{Al m Ga n in 1-m} -n P (0 <m <1,0 <n <1 , M + n <1) layer, the first etching marker layer 37 is realized by a Ga _n In _1-n P (0 <n <1) layer, and the second first P-type cladding layer 38 is P-type Al _m. Ga _n In _1-mn P (0 <m <1, 0 <n < 1, m + n <1) layers, and the first P-type cap layer 39 is realized by a P-type GaAs layer.

The first N-type cladding layer corresponds to one of the two first cladding layers, and the first first P-type cladding layer 36 and the second first P-type cladding layer 38 are the other first cladding layers. Constitute. As described above, the first and second first P-type cladding layers 36 and 38 constituting the other first cladding layer are made of Al _x1 Ga _y1 In _1-x1-y1 P (0 <x1 <1,0). It is formed of an aluminum-gallium-indium-phosphorus compound semiconductor material represented by <y1 <1, x1 + y1 <1). A compound semiconductor material is represented by a composition formula in which constituent elements are arranged. In the composition formula, a suffix attached to each element represents a composition ratio of each element.

In the present embodiment, the first etching marker layer 37 is interposed between the first first P-type cladding layer 36 and the second first P-type cladding layer 38 constituting the other first cladding layer. The first and second first P-type cladding layers 36 and 38 and the first etching marker layer 37 have no significant difference in diffusion rate. This is because these constituent materials are close, that is, the first and second first P-type cladding layers 36 and 38 are Al _x1 Ga _y1 In _1-x1-y1 P (0 <x1 <1, 0 <y1 <1, Gallium- formed by an aluminum-gallium-indium-phosphorus compound semiconductor material represented by x1 + y1 <1) and having a first etching marker layer 37 represented by Ga _n In _1-n P (0 <n <1) This is because the indium-phosphorus compound semiconductor material is used.

Although not shown, the first active layer 34 includes a first well layer (hereinafter also referred to as “first well layer”) and a first barrier layer (hereinafter referred to as “first barrier layer”) having a larger energy band gap than the first well layer. In the quantum well structure. The first active layer 34 is configured by alternately stacking first well layers and first barrier layers in the thickness direction Z. The first well layer and the first barrier layer constituting the first active layer 34 are formed of Al _h Ga _1-h As (0 <h <1). By forming the first active layer 34 with Al _h Ga _1-h As (0 <h <1) in this way, the first semiconductor laser component 22A that emits laser light having a wavelength of 780 nm from the first active layer 34. Is realized.

  Next, as shown in FIG. 4, among the layers constituting the first semiconductor laser constituting portion 22 </ b> A formed as described above, the first laser constituting portion arrangement region 52 in one surface portion in the thickness direction of the semiconductor substrate 21. The portion formed in the other region is removed to form the first semiconductor laser constituting unit 22A. The removal of each layer is performed, for example, by sequentially performing a photolithography step and an etching step. Thus, at the stage where the first semiconductor laser component 22A is formed, the second laser component arrangement region 53 is exposed to one side Z1 in the thickness direction among the one surface portion in the thickness direction of the semiconductor substrate 21. In the first laser component arrangement region 53, one surface portion in the thickness direction is covered with the first semiconductor laser component 22A.

  Next, each layer of the second semiconductor laser component 23A, that is, the semiconductor second N-type buffer layer 41, the second N-type clad, is formed from the Z1 side in the thickness direction of the semiconductor substrate 21 so as to cover the formed first semiconductor laser component 22A. A layer 42, a second N-side guide layer 43, a second active layer 44, a second P-side guide layer 45, a first second P-type cladding layer 46, a second etching marker layer 47, a second second P-type cladding layer 48, The intermediate layer 49 and the second P-type cap layer 50 are formed by epitaxial growth sequentially. Each layer constituting second semiconductor laser constituting unit 23A is formed by a film forming apparatus such as an MOCVD apparatus, for example.

  In this way, the layers constituting the second semiconductor laser constituting portion 23A are formed by being laminated in the thickness direction of the semiconductor substrate 21. Each layer constituting the second semiconductor laser component 23 </ b> A is a remaining region excluding the first laser component arrangement region 52 in one surface portion in the thickness direction of the semiconductor substrate 21, and the second laser component component arrangement region 53. And a surface portion exposed at one side Z1 in the thickness direction of the first semiconductor laser constituting portion 22A.

Each layer constituting the second semiconductor laser component 23A is formed of a semiconductor material, specifically, a compound semiconductor material. In the present embodiment, the second N-type buffer layer 41 is realized by an N-type GaAs layer, and the second N-type cladding layer 42 is an N-type Al _m Ga _n In _1-mn P (0 <m <1,0>< n <1, m + m <1) layer, and the second N-side guide layer 43 is formed of Al _m Ga _n In _1-mn P (0 <m <1, 0 <n <1, m + n <1) layer. The second P-side guide layer 45 is realized by an Al _m Ga _n In _1-mn P (0 <m <1, 0 <n <1, m + n <1) layer, and the first second P-type cladding is realized. The layer 46 is realized by a P-type Al _m Ga _n In _1-mn P (0 <m <1, 0 <n <1, m + n <1) layer, and the second etching marker layer 47 is formed of a Ga _n In _{1 −} is realized by _{n P (0 <n <1} ) layer, the second of the 2P type cladding layer 48 P-type Al _{m a n In 1-m-n} P (0 <m <1,0 <n <1, m + n <1) is implemented by layer, the intermediate layer 49 is _{Ga n In 1-n P (} 0 <n <1) layer The second P-type cap layer 50 is realized by a P-type GaAs layer.

The second N-type cladding layer 42 corresponds to one of the two second cladding layers, and the first second P-type cladding layer 46 and the second second P-type cladding layer 48 are the other second cladding layer. Configure. As described above, the first and second second P-type cladding layers 46 and 48 constituting the other second cladding layer are made of Al _x2 Ga _y2 In _1-x2-y2 P (0 <x2 <1,0). It is formed of an aluminum-gallium-indium-phosphorus compound semiconductor material represented by <y2 <1, x2 + y2 <1). In each layer of the first and second semiconductor laser components 22A and 23A, the symbols m and n may be the same or different.

Also in the second semiconductor laser constituting unit 23A, as in the first semiconductor laser constituting unit 22A, in the present embodiment, the first second P-type cladding layer 46 and the second second P constituting the other second cladding layer. Although the second etching marker layer 47 is interposed between the mold cladding layer 48, the first and second second P-type cladding layers 46 and 48 and the second etching marker layer 47 have a large diffusion rate. There is no difference. This is because these constituent materials are close, that is, the first and second second P-type cladding layers 46 and 48 are Al _x2 Ga _y2 In _1-x2-y2 P (0 <x2 <1, 0 <y2 <1, x2 + y2 <1) with aluminum represented - gallium - indium - formed by phosphorus-based compound semiconductor material, gallium second etching marker layer 47 is represented by _{Ga n in 1-n P (} 0 <n <1) - This is because the indium-phosphorus compound semiconductor material is used.

  In the present embodiment, the other first cladding layers 36 and 38 in the first semiconductor laser constituting part 22A and the other second cladding layers 46 and 48 in the second semiconductor laser constituting part 23A are the same. It is formed by the material. The first etching marker layer 37 of the first semiconductor laser component 22A and the second etching marker layer 47 of the second semiconductor laser component 23A are formed of the same material.

Although not shown, the second active layer 44 includes a second well layer (hereinafter also referred to as “second well layer”) and a second barrier layer (hereinafter referred to as “second barrier layer”) having a larger energy band gap than the second well layer. In the quantum well structure. The second active layer 44 is configured by alternately stacking second well layers and second barrier layers in the thickness direction Z. The second well layer and the second barrier layer constituting the second active layer 44 are formed of Al _j Ga _k In _1-jk P (0 ≦ j <1, 0 <k <1). More specifically, the second well layer is formed of Ga _k1 In _1-k1 P (0 <k1 <1), and the second barrier layer is Al _j Ga _k2 In _1-j-k2 P (0 <j <1). , 0 <k2 <1). Thus, by forming each layer constituting the second active layer 44 with Al _j Ga _k In _1-jk P (0 ≦ j <1, 0 <k <1), the wavelength from the second active layer 44 is increased. The second semiconductor laser component 23A that emits laser light in the 650 nm band can be realized.

  Next, as shown in FIG. 5, among the layers constituting the second semiconductor laser component 23 </ b> A formed as described above, other than the second laser component arrangement region 53 on one surface in the thickness direction of the semiconductor substrate 21. The portion formed in the region is removed to form the second semiconductor laser constituting unit 23A. The removal of each layer is performed, for example, by sequentially performing a photolithography step and an etching step. In this way, the first and second semiconductor laser constituting units 22A and 23A are formed.

  The first semiconductor laser component 22A and the second semiconductor laser component 23A are semiconductors from the surface in the thickness direction one Z1 side of the first semiconductor laser component 22A to the surface in the thickness direction one Z1 side of the first active layer 34. The distance in the thickness direction of the substrate 21 and the distance in the thickness direction of the semiconductor substrate 21 from the surface on the one side Z1 side in the thickness direction of the second semiconductor laser component 23A to the surface on the one side Z1 side in the thickness direction of the second active layer 44 Are formed to be the same. When the first and second semiconductor laser components 22A and 23A are thus formed in step a2 and the workpiece 51 is formed, the process proceeds to step a3.

  In the impurity-containing body arranging step of step a3, as shown in FIGS. 6 and 7, the first impurity-containing body 54 is arranged on one surface in the thickness direction of the first semiconductor laser constituting part 22A, and the semiconductor laser constituting part 23A The second impurity containing body 55 is disposed on one surface portion in the thickness direction. Specifically, the first impurity-containing body 54 is formed on one surface in the thickness direction of the first P-type cap layer 39 of the first semiconductor laser component 22A, and the second P-type cap layer 50 of the second semiconductor laser component 23A. The second impurity-containing body 55 is formed on one surface portion in the thickness direction. In FIG. 6, the first and second impurity-containing bodies 54 and 55 are indicated by hatching for easy understanding.

  A first diffusion region 56 is predetermined in the first semiconductor laser component 22A. The first diffusion region 56 includes at least a part of the first active layer 34 and is set to a part of the first semiconductor laser constituting unit 22A. In the present embodiment, the first diffusion region 56 includes a predetermined portion (hereinafter referred to as “first window region forming portion”) for forming the window structure region 34a of the first active layer 34, and the first semiconductor laser. The first window region forming portion is set as a portion projected in the thickness direction Z in the component 22A.

  A second diffusion region 57 is predetermined in the second semiconductor laser constituting unit 23A. The second diffusion region 57 includes at least a part of the second active layer 44 and is set to a part of the second semiconductor laser constituting unit 23A. In the present embodiment, the second diffusion region 57 includes a predetermined portion (hereinafter referred to as “second window region forming portion”) for forming the window structure region 44a of the second active layer 44, and the second semiconductor laser. The second window region forming portion is set as a portion projected in the thickness direction Z in the constituent portion 23A. In the present embodiment, the first and second diffusion regions 56 and 57 are set so that the positions and dimensions in the resonator direction X are the same.

  The first impurity-containing body 54 is arranged in the first arrangement portion 71 included in the first diffusion region 56 in one surface portion in the thickness direction of the first semiconductor laser constituting unit 22A. The second impurity-containing body 55 is arranged in the second arrangement portion 72 included in the second diffusion region 57 in one surface portion in the thickness direction of the second semiconductor laser constituting unit 23A. The first and second impurity containing bodies 54 and 55 contain the same impurity, zinc (Zn) in the present embodiment.

  The first diffusion region 56 and the second diffusion region 57 have different diffusion rates of impurities contained in the first and second impurity-containing bodies 54 and 55, that is, the same amount of impurities is supplied per unit volume. The amount of impurities diffused per unit time is different. In the present embodiment, the impurity diffusion rate in the second diffusion region 57 is higher than the impurity diffusion rate in the first diffusion region 56. “Diffusion rate” refers to a diffusion rate when impurities are diffused by thermal diffusion. The relationship between the diffusion rate of impurities in the first diffusion region 56 and the diffusion rate of impurities in the second diffusion region 57 is derived from the diffusion coefficient of each layer constituting the first and second diffusion regions 56 and 57. Can do. In the present embodiment, since the layers constituting the first and second semiconductor laser constituting portions 22A and 23A are formed of the above-described compound semiconductor material, the second diffusion region 57 is compared with the first diffusion region 56. Thus, the diffusion rate of the impurities contained in the first and first impurity-containing bodies 54 and 55 is high.

  More specifically, although the diffusion rate of the impurity greatly depends on the crystal structure of the layer in which the impurity is diffused, the first P-type cladding layers 36 and 38 of the first semiconductor laser component 22A as in the present embodiment. When both the second P-type cladding layers 46 and 48 of the second semiconductor laser component 23A are formed of AlGaInP, the impurity diffusion rate V1 in the first diffusion region 56 and the impurity diffusion rate in the second diffusion region 57 The diffusion rate V2 is a close numerical value. Specifically, the diffusion rate ratio V1 / V2 obtained by dividing the impurity diffusion rate V1 in the first diffusion region 56 by the impurity diffusion rate V2 in the second diffusion region 57 is approximately 0.5 or more and less than 1.0. It becomes the value of.

  As in this embodiment, the structure above the active layers 34 and 44 of the first semiconductor laser component 22A and the second semiconductor laser component 23A, that is, from the P-side guide layers 35 and 45 to the P-type cap layers 39 and 50. When the structure is substantially the same and only the active layers 34 and 44 are separated, the diffusion rate ratio V1 / V2 is very close to 1.0. That is, a significant difference in the diffusion rate of impurities in the first and second impurity diffusion regions 56 and 57 is the difference in diffusion rate in the active layer portion, that is, the diffusion rate in the first active layer 34 and the diffusion rate in the second active layer 44. The difference with is a big weight.

  Ratio of one surface in the thickness direction of the first contact portion 73 in contact with the first impurity-containing body 54 in the first arrangement portion 71 of the first semiconductor laser component 22 </ b> A to the entire one surface in the thickness direction of the first arrangement portion 71. P1 (hereinafter referred to as “first impurity-containing body ratio”) is the surface in the thickness direction of the second contact portion 74 in contact with the second impurity-containing body 55 in the second arrangement portion 72 of the second semiconductor laser component 23A. The ratio of the second arrangement portion 72 to the entire surface in the thickness direction (hereinafter referred to as “second impurity-containing body ratio”) P2 (P1> P2).

  In the present embodiment, the first impurity-containing body 54 is arranged over the entire first arrangement portion 71 of the first semiconductor laser component 22A. The second impurity-containing body 55 is arranged in a part of the second arrangement portion 72 of the second semiconductor laser component 23A. More specifically, the second impurity containing body 55 includes a plurality of impurity containing portions 55a. When a plurality of impurity-containing portions are arranged in the first or second arrangement portions 71 and 72 as described above, the impurity-containing body ratios P1 and P2 described above correspond to the respective impurity-containing portions in the corresponding arrangement portions 71 and 72. The total area of one surface in the thickness direction of the portion in contact with the thickness is divided by the total area of one surface in the thickness direction of the arrangement portions 71 and 72.

  As described above, in the present embodiment, the diffusion rate ratio V1 / V2 obtained by dividing the impurity diffusion rate V1 in the first diffusion region 56 by the impurity diffusion rate V2 in the second diffusion region 57 is 0.5 or more. It is less than 1.0. Therefore, the inclusion body area ratio obtained by dividing the first impurity-containing body ratio P1 by the second impurity-containing body ratio P2 is selected from 8 to 20. The inclusion body area ratio is not limited to the above range, but is preferably 8 or more and 20 or less. Further, the thickness dimension t1 of the first impurity-containing body 54 and the thickness dimension t2 of the second impurity-containing body 55 are both selected from 30 nm to 300 nm. The thickness dimensions t1 and t2 of the first and second impurity-containing bodies 54 and 55 are not limited to the above range, but are preferably 30 nm or more and 300 nm or less.

  Each impurity-containing portion 55a constituting the second impurity-containing body 55 is formed in a dot shape, more specifically in a circular dot shape. The diameter R of each impurity containing portion 55a is, for example, 2 μm. In the present embodiment, the impurity containing portions 55a constituting the second impurity containing body 55 are formed at regular intervals. The center-to-center distance (hereinafter referred to as “pitch”) W between two adjacent impurity-containing portions 55a is, for example, 10 μm. In the present embodiment, the pitch W of the impurity-containing portion 55a is the same in both the resonator direction X and the arrangement direction Y. The pitch W of the impurity containing portion 55a is selected according to the dimension d1 in the resonator direction X and the dimension d2 in the arrangement direction Y of the second diffusion region 57.

  For example, the second impurity-containing body 55 has a pitch W of the impurity-containing portion 55a within 10% or more and 20% or less of the dimension d1 in the resonator direction X with reference to the dimension d1 in the resonator direction X of the second diffusion region 57. Within this range, the first impurity-containing body ratio P1, which is the ratio of one surface in the thickness direction of the first contact portion 73 to the entire one surface in the thickness direction of the first arrangement portion 71, is set to the second contact portion 74. The content area ratio divided by the second impurity content ratio P2, which is the ratio of one surface in the thickness direction to the entire surface in the thickness direction of the second arrangement portion 72, is set to 8 or more and 20 or less.

  The first and second impurity containing bodies 54 and 55 are formed using, for example, a lift-off method. In this case, the first and second impurity containing bodies 54 and 55 are formed by sequentially performing a lift-off resist pattern forming step, an impurity layer forming step, and a lift-off step.

  In the lift-off resist pattern formation stage, a lift-off resist pattern is formed using a photolithography technique. Specifically, a resist film is formed on the entire surface of the semiconductor substrate 21 and the first and second semiconductor laser constituting units 22A and 23A in the thickness direction, one side Z1, and a part of the resist film is exposed using a photomask. Then, development is performed to remove one of the exposed portion and the non-exposed portion of the resist film, and patterning is performed.

  The exposure of the resist film is performed on the remaining portions of one surface portion in the thickness direction of the first and second semiconductor laser constituting portions 22A and 23A except for a predetermined portion for forming the first and second impurity-containing bodies 54 and 55. This is performed so that the resist film remains in the portion. Specifically, the resist film is formed on the first contact portion 73 of the first arrangement portion 71 of the first semiconductor laser component 22A and the second contact portion 74 of the second arrangement portion 72 of the second semiconductor laser component 23A. The formed resist film is removed and formed in the remaining portion of the first arrangement portion 71 excluding the first contact portion 73 and the remaining portion of the second arrangement portion 72 excluding the second contact portion 74. Exposure is performed so that the resist film remains. Thus, at the stage where development is completed, the resist film formed in a predetermined portion for forming the first and second impurity-containing bodies 54 and 55 is removed, and the first and second impurity-containing bodies 54 and 55 are formed. Therefore, a resist pattern in which the resist film remains in the remaining portion excluding the predetermined portion is formed.

  In the impurity layer formation stage, a portion where the resist film is not formed in one surface portion in the thickness direction of the first and second semiconductor laser constituting portions 22A and 23A and one surface portion in the thickness direction of the resist film are sputtered. An impurity layer containing impurities is formed by a method. Thereby, an impurity layer is formed so as to cover the first and second arrangement portions. The impurity layer is realized by a zinc oxide (ZnO) film in this embodiment.

  In the lift-off stage, together with the resist film, a portion of the impurity layer covering the resist film from one side X1 in the thickness direction (hereinafter referred to as “removed portion”) is removed. In the present embodiment, the resist film is formed by immersing the object 51 on which the impurity layer is formed as described above in an organic solvent such as acetone or a remover and applying ultrasonic vibration with an ultrasonic cleaner. At the same time, the removed portion is removed. In this way, the lift-off stage is carried out. In the lift-off stage, the resist film remains in the remaining portion of the first arrangement portion 71 excluding the first contact portion 73 and the remaining portion of the second arrangement portion 72 excluding the second contact portion 74. By removing the removed portion together with the resist film at the lift-off stage, the remaining portion of the first arrangement portion 71 excluding the first contact portion 73 and the remaining portion of the second arrangement portion 72 excluding the second contact portion 74 are removed. The impurity layer formed in this portion is removed, and first and second impurity containing bodies 54 and 55 are formed.

  As described above, in the present embodiment, the impurity layer forming step is performed in which the impurity layer is formed so as to cover the first and second arrangement portions 71 and 72 of the first and second semiconductor laser constituting units 22A and 23A. Impurity layers formed in the remaining portion of the first arrangement portion 71 excluding the first contact portion 73 and the remaining portion of the second arrangement portion 72 excluding the second contact portion 74 in the impurity layer. The first and second impurity-containing bodies 54 and 55 are formed by removing the substrate and performing the removing step of forming the first and second impurity-containing bodies 54 and 55. When the above-described lift-off method is used, the lift-off resist pattern formation step and the lift-off step correspond to the removal step.

After the first and second impurity-containing bodies 54 and 55 are formed in this manner, for example, plasma chemical vapor deposition (Plasma Chemical Vapor) is formed on the entire surface of the object 51 in the thickness direction.
An insulating film for preventing volatilization (not shown) is formed by Deposition (abbreviated as PCVD) method. Specifically, the remaining portion excluding the portion where the first and second impurity-containing bodies 54 and 55 are formed in one surface portion in the thickness direction of the first and second semiconductor laser constituting portions 22A and 23A, the first Of the one surface portion in the thickness direction of the first and second impurity-containing bodies 54 and 55 and one surface portion in the thickness direction of the semiconductor substrate 21, the remaining portions excluding the portions where the first and second semiconductor laser constituting portions 22A and 23A are formed. An insulating film for preventing volatilization is formed on the portion.

The insulating film for volatilization prevention is formed so as to cover the first and second semiconductor laser components 22A and 23A. Thus, by forming the volatilization-preventing insulating film so as to cover the first and second semiconductor laser constituting units 22A and 23A, the first and second semiconductor laser constitutions during the heat treatment in the diffusion process of step a4 described later. Arsenic (As) can be prevented from escaping from the layers constituting the portions 22A and 23A. The insulating film for preventing volatilization is realized by, for example, a silicon dioxide (SiO ₂ ) film. The thickness dimension of the volatilization preventing insulating film is, for example, 0.2 μm. When the volatilization preventing insulating film is thus formed in step a3, the process proceeds to step a4.

  In the diffusion step of step a4, the first diffusion region 56 in which the first impurity-containing body 54 is disposed and the second diffusion region 57 in which the second impurity-containing body 55 is disposed are heated to produce the first and first 2 Impurities are diffused in the diffusion regions 56 and 57. Specifically, the target object 51 in which the first and second impurity containing bodies 54 and 55 are arranged is heated to diffuse the impurities into the first and second diffusion regions 56 and 57. By diffusing impurities in the first and second diffusion regions 56 and 57 in this way, a window structure region 34 a is formed at one end portion in the resonator direction X of the first active layer 34, and the second active layer 44. A window structure region 44a is formed at one end in the resonator direction X of the window. The impurity containing body arranging step in step a3 and the diffusing step in step a4 correspond to a window structure region forming step.

  In the present embodiment, the diffusion process of step a4 is a Zn diffusion process by heat treatment. The conditions at this time are, for example, that the heating temperature of the first and second diffusion regions 56 and 57 (hereinafter also referred to as “treatment temperature”) is 620 ° C., and the heating time of the first and second diffusion regions 56 and 57 (Hereinafter also referred to as “treatment time”) is 120 minutes. The heating temperature and heating time of the first and second diffusion regions 56 and 57 are not limited to this, but in this embodiment, the heating temperature is preferably 600 ° C. or more and 640 ° C. or less, and the heating time is 30 minutes. It is preferable that it is 180 minutes or less. The heating temperature of the first and second diffusion regions 56 and 57 is substantially equal to the heating temperature of the object to be processed 51. In this embodiment, the heating temperature of the object to be processed 51 is selected from 600 ° C. to 640 ° C. The heating temperature of the first and second diffusion regions 56 and 57 is adjusted to 600 ° C. or higher and 640 ° C. or lower.

  After the impurities are diffused in the first and second diffusion regions 56 and 57 in this way, the first and second impurities remaining on one surface portion in the thickness direction of the first and second semiconductor laser constituting portions 22A and 23A. The inclusions 54 and 55 and the insulating film for preventing volatilization are removed by etching using, for example, a fluorine-based etchant. When the first and second impurity containing bodies 54 and 55 and the volatilization preventing insulating film are removed in step a4 in this way, the process proceeds to step a5.

  In the ridge portion forming step in step a5, ridge portions 28 and 29 are formed in the first and second semiconductor laser constituting portions 22A and 23A. In step a5, first, as shown in FIG. 8, a ridge mask 61 is formed in a predetermined portion for forming the ridge portions 28 and 29 of the first and second semiconductor laser constituting portions 22A and 23A. FIG. 8 shows a stage where the ridge portions 28 and 29 are formed. At the stage where the ridge portions 28 and 29 are formed, the ridge mask 61 remains as shown in FIG. The ridge mask 61 is also formed on a predetermined portion so as to form the current confinement portions 60 formed on both sides of the ridge portions 28 and 29 so as to be separated from the ridge portions 28 and 29 in the arrangement direction Y.

The ridge mask 61 is formed by sequentially performing an insulating film forming step, a photolithography step, and an etching step. In the insulating film formation stage, the entire surface portion of the object 51 in the thickness direction, that is, the one surface portion in the thickness direction of the first and second semiconductor laser components 22A and 23A, and the one surface portion in the thickness direction of the semiconductor substrate 21 Then, a mask insulating film made of an insulating material such as SiO ₂ is formed on the portions where the first and second semiconductor laser constituting portions 22A and 23A are not formed by, for example, the PCVD method.

  In the photolithography stage, a resist film is formed on the entire surface portion in the thickness direction of the mask insulating film, and a part of the resist film is exposed and developed using the photomask, and the first and second ridge portions 28, 29, In addition, the mask insulating film formed in a portion other than the predetermined portion for forming the current confinement portion 60 is removed to form a resist mask. In the etching step, for example, a reactive ion etching (abbreviated as RIE) apparatus is used to remove a portion of the mask insulating film not covered with the resist mask, thereby forming a ridge mask 61.

  Using the ridge mask 61 formed in this way, the first and second semiconductor laser constituting portions 22A and 23A in the portions not covered with the ridge mask 61 are etched by dry etching, and the ridge portions 28, 29 and the current constriction 60 are formed. In the first semiconductor laser component 22A, the first etching marker layer 37 and the layer provided on the Z1 side in the thickness direction from the portion not covered with the ridge mask 61 are removed by etching. In the second semiconductor laser constituting portion 23A, the second etching marker layer 47 and the layer provided on the Z1 side in the thickness direction from the portion not covered with the ridge mask 61 are removed by etching. The dry etching is realized by reactive ion etching using, for example, an inductively coupled plasma (abbreviated ICP) method.

  For the etching of the first and second semiconductor laser constituting portions 22A and 23A for forming the ridge portions 28 and 29, wet etching and dry etching may be used in combination, but wet etching and dry etching may be used in combination. Instead, it is preferable to perform etching only by dry etching as in this embodiment. Thus, by performing the process only by dry etching, the perpendicularity of the ridge shape can be maintained, and the effect of improving the quantum efficiency characteristics of the manufactured monolithic semiconductor laser element 20 and the occurrence of kinks are suppressed. An effect can be obtained.

After the ridge portions 28 and 29 are formed in this way, the ridge mask 61 is removed, and the entire surface portion on the Z1 side in the thickness direction of the wafer 51 as the object to be processed, that is, the first and second semiconductor laser constituting portions. A dielectric film 24 is formed on the exposed surface portions of 22A and 23A and the surface portion of the semiconductor substrate 21 in the thickness direction where the first and second semiconductor laser constituting portions 22A and 23A are not formed. The dielectric film 24 is realized by a silicon dioxide (SiO ₂ ) film, for example.

  Next, as shown in FIGS. 9 and 10, in the formed dielectric film 24, the first and second ridge portions 28 and 29 serving as current conducting portions in the thickness direction on one side Z1 side, that is, the first ridge. The dielectric film 24 formed on the surface portion on the Z1 side in the thickness direction of the first P-type cap layer 39 of the portion 28 and the second P-type cap layer 50 of the second ridge portion 29 is removed, and the dielectric film 24 is patterned. In the present embodiment, the first and second dielectric films 24 formed on one surface in the thickness direction of the first and second ridge portions 28 and 29 to prevent current injection into the window structure regions 34a and 44a. The dielectric film 24 formed in the portion included in the first and second diffusion regions 56 and 57 where the window structure regions 34a and 44a on one surface portion in the thickness direction of the second ridge portions 28 and 29 are formed is removed. It is patterned so as to remain. The patterning of the dielectric film 24 is performed by sequentially performing a photolithography step and an etching step. The etching step may be performed by dry etching using an RIE apparatus, for example, or may be performed by wet etching using a fluorine-based etchant, for example. When the dielectric film 24 is thus patterned in step a5, the process proceeds to step a6.

  In the electrode formation step of step a6, the N-side electrode 27 and the P-side electrodes 25 and 26 are formed. Specifically, in step a6, first, the N-type semiconductor substrate 21 is polished by, for example, a substrate polishing apparatus to reduce the thickness dimension of the N-type semiconductor substrate 21 to a desired value. Next, the N-side electrode 27 is formed on the surface portion on the other Z2 side in the thickness direction of the N-type semiconductor substrate 21. The N-side electrode 27 is configured by, for example, a gold (Au) -germanium (Ge) -nickel (Ni) alloy layer, a molybdenum (Mo) layer, and a gold (Au) layer stacked in this order on the other Z2 in the thickness direction. A laminated structure is formed. Each layer constituting the N-side electrode 27 is formed by sputtering or vapor deposition, for example.

  After forming each layer constituting the N-side electrode 27 in this manner, annealing is performed to form an ohmic contact between the N-type semiconductor substrate 21 and the N-side electrode 27. The annealing conditions are, for example, that the heating temperature of the object to be processed 51 (hereinafter referred to as “processing temperature”) is 440 ° C. and the heating time of the object to be processed 51 (hereinafter also referred to as “processing time”) is 10 minutes. The annealing condition is not limited to this, and an appropriate condition is selected so that an ohmic contact is formed between the N-type semiconductor substrate 21 and the N-side electrode 27.

  Next, the first and second P-side electrodes 25 and 26 are formed. Specifically, first electrode layers 25a and 26a are first formed on the entire surface portion on the Z1 side in the thickness direction of the workpiece 51 by, for example, vapor deposition or sputtering. The first electrode layers 25a and 26a are formed in a stacked structure in which, for example, a gold (Au) -zinc (Zn) alloy layer and a molybdenum (Mo) layer are stacked in this order in the thickness direction one Z1. After the first electrode layers 25a and 26a are thus formed, annealing is performed to form ohmic contacts between the ridge portions 28 and 29 and the first electrode layers 25a and 26a. The annealing conditions are, for example, that the heating temperature of the object to be processed 51 is 440 ° C., and the heating time of the object to be processed 51 is 10 minutes. The annealing condition is not limited to this, and an appropriate condition is selected so that an ohmic contact is formed between the ridge portions 28 and 29 and the first electrode layers 25a and 26a.

  Next, the second electrode layers 25b and 26b are formed, for example, by plating on the surface of the first electrode layers 25a and 26a on the Z1 side in the thickness direction. The second electrode layers 25b and 26b are realized by, for example, a gold (Au) layer. Of the formed first electrode layer 25a, 26a and second electrode layer 25b, 26b, a portion formed in the remaining portion excluding a predetermined portion for forming the first and second P-side electrodes 25, 26, The first and second P-side electrodes 25 and 26 are formed by removing the photolithography step and the etching step in order. Thereby, the first and second laser element portions 22 and 23 are formed. When the first and second laser element portions 22 and 23 are thus formed in step a6, the process proceeds to step a7.

  In the element separation step of step a7, the object to be processed 51 is cut along predetermined first and second cutting lines 62 and 63 and divided into individual monolithic semiconductor laser elements 20. Specifically, first, in order to form a coat film on the end face portions of the first and second laser element portions 22 and 23 in the resonator direction X, the resonator direction X of the first and second laser element portions 22 and 23 is determined. A portion in which the first and second laser element portions 22 and 23 are formed from the wafer 51 by cutting the wafer 51 as the object to be processed with a first cutting line 62 determined in advance so that both end surfaces of the wafer are exposed. Is cut into strips. In the wafer 51a cut in a strip shape (hereinafter referred to as “cut wafer”) 51a, a plurality of monolithic semiconductor laser elements 20 are arranged in the arrangement direction Y.

  For example, an end face coat film (not shown) for protecting and adjusting the reflectance on both end face portions in the resonator direction X of each of the first and second laser element portions 22 and 23 included in the cut wafer 51a is provided. The film is formed by a film forming apparatus such as an electron cyclotron resonance (abbreviated as ECR) sputtering apparatus or an electron beam (abbreviated as EB) vapor deposition apparatus. The cut wafer 51a on which the end face coat film is formed is cut by a predetermined second cutting line 63 so that each of the first and second laser element portions 22 and 23 is included, and a monolithic semiconductor laser element Separate every 20th. As a result, the monolithic semiconductor laser element 20 shown in FIG. 1 is obtained. FIG. 10 shows a state in which the wafer 51 is cut along the second cutting line 63. In the present embodiment, since the first laser element unit 22 and the second laser element unit 23 have different oscillation wavelengths, two laser element units 22 and 23 having different oscillation wavelengths are provided on one semiconductor substrate 21. A so-called two-wavelength monolithic semiconductor laser element 20 is obtained. When the monolithic semiconductor laser device 20 is manufactured in this way, the process proceeds to step a8, and the manufacturing operation is completed.

  As described above, according to the first embodiment of the present invention, when the first and second impurity containing bodies 54 and 55 shown in FIGS. 6 and 7 are arranged in the impurity containing body arranging step of step a3. The ratio of one surface in the thickness direction of the first contact portion 73 in contact with the first impurity-containing body 54 in the first arrangement portion 71 of the first semiconductor laser component 22A to the entire one surface in the thickness direction of the first arrangement portion 71 The first impurity-containing body ratio P1 is such that one surface in the thickness direction of the second contact portion 74 in contact with the second impurity-containing body 55 in the second arrangement portion 72 of the second semiconductor laser component 23A is the second arrangement portion. 72 is selected to be larger than the second impurity-containing body ratio P2, which is the ratio of the entire surface in the thickness direction of 72.

  Thus, by making the first impurity content ratio P1 larger than the second impurity content ratio P2, the surface of the second arrangement portion of the second semiconductor laser component 23A in the thickness direction on the one side Z1 side can be obtained at the same time. The second average impurity supply amount, which is the amount of impurities supplied per unit area, is the amount of impurities supplied per unit area on the surface on the Z1 side in the thickness direction of the first arrangement portion of the first semiconductor laser component 22A. The first impurity average supply amount, which is the amount, can be reduced.

  As a result, when the impurity diffusion rate in the second diffusion region 57 is higher than the impurity diffusion rate in the first diffusion region 56 as in the present embodiment, the first impurity containing body 54 changes to the first active layer. It is possible to suppress a difference between the time required for the impurity to diffuse up to 34 and the time required for the impurity to diffuse from the second impurity-containing body 55 to the second active layer 44. is there. In other words, in the present embodiment, at the same time, that is, in the same process, the portion included in the first diffusion region 56 of the first active layer 34 and the second diffusion region 57 of the second active layer 44 are included. Impurities can be diffused throughout the thickness direction for both the portions. Therefore, by heating the object 51 in the diffusion step, it is possible to diffuse impurities in both the first active layer 34 and the second active layer 44, and the window structure region 34a, 44a can be formed.

  More specifically, in the present embodiment, the structure above the active layers 34 and 44 of the first semiconductor laser component 22A and the second semiconductor laser component 23A, that is, the impurity containing body corresponding to each of the active layers 34 and 44. The structures from the P-side guide layers 35, 45 to the P-type cap layers 39, 50 interposed between the P-type cap layers 39, 50 are made substantially the same structure, and only the active layers 34, 44 are made different structures. Therefore, the diffusion rate ratio V1 / V2 is very close to 1.0. That is, in the present embodiment, the stacked body composed of the layers 35 to 39 interposed between the first active layer 34 and the first impurity-containing body 54, the second active layer 44 and the second impurity-containing body 55. Since the laminated body composed of the layers 45 to 50 interposed therebetween is formed of substantially the same material and has substantially the same structure, the diffusion rate of impurities is also substantially the same, and the impurity in the first diffusion region 56 is The diffusion rate V1 is very close to the impurity diffusion rate V2 in the second diffusion region 57.

  As described above, in this embodiment, the impurity diffusion rate V1 in the first diffusion region 56 can be set to a value very close to the impurity diffusion rate V2 in the second diffusion region 57. Since the second active layer 44 is formed of a different material and has a different diffusion rate, the impurity diffusion rate V2 in the second diffusion region 57 is the first due to the difference in impurity diffusion rate in the active layers 34 and 44. This is slightly higher than the impurity diffusion rate V1 in the diffusion region 56. As the final adjustment of the difference in diffusion rate, the impurity diffusion method in this embodiment is preferably used. According to the present embodiment, the first impurity-containing body ratio P1 is made larger than the second impurity-containing body ratio P2, and the first and second diffusion regions 56 and 57 are heated. Impurities can be diffused over the entire thickness direction in both the portion included in the first diffusion region 56 of the active layer 34 and the portion included in the second diffusion region 57 of the second active layer 44. It is.

  In the present embodiment, the first and second active layers 34 and 44 are formed in a quantum well structure in which a well layer is sandwiched between barrier layers. This quantum well structure is disordered by impurity diffusion, and the energy band gap of the disordered portion becomes larger than the energy band gap of the unordered portion. Specifically, the quantum well structure is destroyed by the diffusion of Zn, which is an impurity, and the well layer and the barrier layer are fused, and the energy band gap is increased by this fusion. Zn as an impurity is diffused from the first and second impurity containing bodies 54 and 55 to the other Z2 in the thickness direction. As the impurities are diffused in the other thickness direction Z2, the disordering of the first and second active layers 34 and 44 proceeds in the other thickness direction Z2.

  As described above, in the present embodiment, in the diffusion step, the portion included in the first diffusion region 56 of the first active layer 34 and the portion included in the second diffusion region 57 of the second active layer 44 For both, since the impurity can be diffused throughout the thickness direction, the first and second active layers 34 and 44 are simultaneously disordered so that both the first and second active layers 34 and 44 have window structure regions. 34a and 44a can be formed simultaneously. Accordingly, the monolithic semiconductor laser device 20 is formed as compared with the case where the window structure region 34a, 44a is formed in one of the first and second active layers 34, 44 and then the window structure region is formed in the other active layer. Therefore, the monolithic semiconductor laser device 20 can be easily manufactured.

  Formation patterns of the first and second impurity-containing bodies 54 and 55, specifically, the shapes of the first and second impurity-containing bodies 54 and 55, the first and second impurity-containing body ratios P1 and P2, and the diffusion process The heat treatment conditions are such that the first and second semiconductor laser components 22A, 22A, 22A, 22A, 22A, 23A are formed in a desired manner at the same time for both the first and second semiconductor laser components 22A, 23A. In consideration of the constituent elements of 23A, it is selected so as to be an optimal combination.

In the present embodiment, the other first cladding layers 36 and 38, which are the first cladding layers interposed between the first active layer 34 and the first impurity-containing body 54, are made of Al _x1 Ga _y1 In _{1. -X1-y1} P (0 <x1 <1,0 <y1 <1, x1 + y1 <1), and a second cladding layer interposed between the second active layer 44 and the second impurity-containing body 55. The other second cladding layer 46, 48 is formed of Al _x2 Ga _y2 In _1-x2-y2 P (0 <x2 <1, 0 <y2 <1, x2 + y2 <1). As described above, the first and second cladding layers 36, 38, 46, 48 interposed between the active layers 34, 44 and the impurity-containing bodies 54, 55 are formed of a semiconductor material containing the same element. Impurities can be diffused in the first and second cladding layers 36, 38, 46, and 48 at a constant rate.

  As a result, it is possible to prevent a difference in impurity diffusion rate between the first and second cladding layers 36, 38, 46, 48 interposed between the active layers 34, 44 and the impurity-containing bodies 54, 55. . Therefore, when the diffusion rate of impurities in the first active layer 34 is lower than the diffusion rate of impurities in the second active layer 44 as in the present embodiment, the first impurity content ratio P1 is changed to the second impurity content ratio P2. Is larger than both the portion included in the first diffusion region 56 of the first active layer 34 and the portion included in the second diffusion region 57 of the second active layer 44 in the diffusion step. The window structure regions 34a and 44a can be formed by more reliably diffusing impurities by heating.

  In the present embodiment, the inclusion body area ratio obtained by dividing the first impurity-containing body ratio P1 by the second impurity-containing body ratio P2 is 8 or more and 20 or less. If the inclusion body area ratio is less than 8, the difference between the second impurity average supply amount and the first impurity average supply amount is not sufficient, and therefore the time required for the impurities to diffuse to the first active layer 34 in the diffusion step. However, it becomes excessively longer than the time required for the impurities to diffuse to the second active layer 44. When the difference in time required for diffusion becomes large in this way, there is a possibility that impurities cannot be diffused simultaneously into the portions included in the corresponding diffusion regions 56 and 57 of the first and second active layers 34 and 44. is there. When the inclusion body area ratio exceeds 20, the second impurity average supply amount becomes excessively smaller than the first impurity average supply amount, contrary to the case where the inclusion body area ratio is less than 8, and the second active layer The time required for the impurities to diffuse up to 44 becomes excessively longer than the time required for the impurities to diffuse up to the first active layer 34. Also in this case, there is a possibility that impurities cannot be simultaneously diffused into the portions of the first and second active layers 34 and 44 that are included in the corresponding diffusion regions 56 and 57.

  As described above, in the present embodiment, the inclusion body area ratio is selected to be 8 or more and 20 or less, so that the difference between the first impurity average supply amount and the second impurity average supply amount can be made suitable. As a result, the difference between the time required for the impurity to diffuse to the first active layer 34 and the time required for the impurity to diffuse to the second active layer 44 can be suppressed to a small value. By heating in the process, both the portion included in the first diffusion region 56 of the first active layer 34 and the portion included in the second diffusion region 57 of the second active layer 44 are more reliably ensured. Impurities can be diffused.

  In the present embodiment, the thickness dimension t1 of the first impurity-containing body 54 and the thickness dimension t2 of the second impurity-containing body 55 are both 30 nm or more and 300 nm or less. If the first and second impurity-containing bodies 54 and 55 have thickness thicknesses t1 and t2 of less than 30 nm, if the first and second impurity-containing bodies 54 and 55 have thickness unevenness, There is a possibility that the amount of impurities supplied to the first and second diffusion regions 56 and 57, specifically, the first impurity average supply amount and the second impurity average supply amount may be uneven. When the thickness dimensions t1 and t2 of the first and second impurity-containing bodies 54 and 55 exceed 300 nm, the dimensional accuracy in the process of forming the first and second impurity-containing bodies 54 and 55 decreases, and the window structure regions 34a and 44a Cause variations in the formation of the.

  As described above, in the present embodiment, the thickness dimensions t1 and t2 of the first and second impurity-containing bodies 54 and 55 are selected to be 30 nm or more and 300 nm or less, so that the first and second diffusion regions 56 and 57 are supplied. The influence of the uneven thickness of the first and second impurity-containing bodies 54 and 55 on the amount of impurities to be performed can be eliminated. For example, when the first and second impurity-containing bodies 54 and 55 are formed by a sputtering apparatus, the influence of the thickness distribution of the film formed by the sputtering apparatus can be eliminated. Thereby, with respect to the thickness direction Z, a sufficient supply amount of impurities from the first and second impurity-containing bodies 54 and 55 can be secured, so that the correspondence between the first and second semiconductor laser constituting units 22A and 23A can be ensured. The amount of impurities supplied to the portions included in the diffusion regions 56 and 57 can be adjusted more reliably based on the first impurity content ratio P1 and the second impurity content ratio P2.

  Further, since the thickness dimensions t1, t2 of the first and second impurity-containing bodies 54, 55 are 30 nm or more and 300 nm or less, the dimensional accuracy of the first and second impurity-containing bodies 54, 55 is increased, and the window structure regions 34a, Variations in the formation of 44a can be suppressed. Also from this point, the amount of impurities supplied to the portions included in the corresponding diffusion regions 56 and 57 of the first and second semiconductor laser constituting units 22A and 23A is set to the first impurity-containing body ratio P1 and the second impurity. It can adjust more reliably based on the content rate P2.

  Therefore, the heating in the diffusion process is more reliable for both the portion included in the first diffusion region 56 of the first active layer 34 and the portion included in the second diffusion region 57 of the second active layer 44. Impurities can be diffused. In the present embodiment, since the first and second impurity-containing bodies 54 and 55 are collectively formed, the thickness dimension t1 of the first impurity-containing body 54 and the thickness dimension t2 of the second impurity-containing body 55 are substantially equal. May be different.

  Moreover, in this Embodiment, the heating temperature of the 1st and 2nd to-be-diffused area | regions 56 and 57 in a diffusion process, ie, the heating temperature of the to-be-processed object 51, is 600 to 640 degreeC. When the heating temperature of the first and second diffusion regions 56 and 57 is less than 600 ° C., the impurity diffusion rate in the first diffusion region 56 is excessively higher than the impurity diffusion rate in the second diffusion region 57. Even if the first and second diffusion regions 56 and 57 are heated in the diffusion process, they are included in the first diffusion region of the first active layer and the second diffusion region of the second active layer. There is a possibility that the impurity cannot be diffused into both of the portions. When the heating temperature of the first and second diffusion regions 56 and 57 exceeds 640 ° C., impurities diffuse into regions outside the first and second diffusion regions 56 and 57, and the first and second semiconductor laser configurations Crystal defects may occur in each layer included in the portions 22A and 23A.

  As described above, in the present embodiment, the heating temperature of the object to be processed 51 is selected to be 600 ° C. or higher and 640 ° C. or lower, and the heating temperatures of the first and second diffusion regions 56 and 57 are 600 ° C. or higher and 640 ° C. or lower. Therefore, the portion of the first active layer 34 included in the first diffusion region 56 and the second diffusion layer of the second active layer 44 are heated by heating the first and second diffusion regions 56 and 57 in the diffusion process. Impurities can be more reliably diffused throughout the entire region with respect to both of the portions included in the region 57. Further, it is possible to suppress the diffusion of impurities to the regions outside the first and second diffusion regions 56 and 57. In addition, it is possible to suppress the occurrence of crystal defects in each layer of the first and second semiconductor laser constituting units 22A and 23A.

  In the present embodiment, the heating time of the first and second diffusion regions 56 and 57 in the diffusion process is not less than 30 minutes and not more than 180 minutes. If the heating time of the first and second diffusion regions 56 and 57 is less than 30 minutes, the time for the impurity to diffuse into the first and second diffusion regions 56 and 57 is insufficient, and heating is performed in the diffusion process. Even so, there is a possibility that the impurity cannot be diffused over the entire portion of the first active layer 34 included in the first diffusion region 56 and the portion of the second active layer 44 included in the second diffusion region 57. When the heating time of the first and second diffusion regions 56 and 57 exceeds 180 minutes, impurities diffuse into the regions outside the first and second diffusion regions 56 and 57, or the first and second semiconductor laser configurations Crystal defects may occur in each layer included in the portions 22A and 23A.

  As described above, in the present embodiment, the heating time of the first and second diffusion regions 56 and 57 is selected from 30 minutes to 180 minutes, so the first and second diffusion regions 56 and 57 in the diffusion process are selected. By heating 57, impurities can be more reliably diffused throughout the portions of the active layers of both the first and second active layers 34 and 44 that are included in the corresponding diffused regions 56 and 57. Further, the diffusion of impurities to the regions outside the first and second diffusion regions 56 and 57 is suppressed, and the generation of crystal defects in each layer constituting the first and second semiconductor laser constituting units 22A and 23A is suppressed. be able to.

  In the present embodiment, the impurity containing portions 55a constituting the second impurity containing body 55 are formed at regular intervals. Since the second impurity-containing body 55 is formed in a part of the second arrangement portion 72 included in the second diffusion region 57 on the surface portion on the Z1 side in the thickness direction of the second semiconductor laser constituting portion 23A, Impurities supplied to the diffusion region 57 are not only diffused in the thickness direction other Z2 in each layer of the second semiconductor laser component 23A but also diffused in the direction intersecting the thickness direction Z. That is, the impurities are diffused radially. In the present embodiment, since the impurity containing portions 55a are formed at regular intervals as described above, the entire portion in the direction intersecting the thickness direction Z of the portion included in the second diffusion region 57 of the second active layer 44 is formed. Impurities can be diffused over. As a result, the impurities can be diffused at a constant concentration over the entire portion of the second active layer 44 included in the second diffusion region 57, so that the window structure region 44a having a certain property can be formed. Therefore, when an impurity-containing body is formed on a part of one surface portion in the thickness direction of the semiconductor laser component, the impurity-containing body is formed by arranging a plurality of impurity-containing sections at regular intervals as in this embodiment. Is preferred.

  In the present embodiment, in step a3, the impurity layer is formed on the surface portion of one surface Z1 in the thickness direction of the first and second semiconductor laser components 22A and 23A in the impurity layer formation stage, and then, among the formed impurity layers The first and second impurity-containing bodies 54 and 55 are formed by removing the impurity layer formed in a portion excluding a predetermined portion to form the first and second impurity-containing bodies 54 and 55 in the removing step. . As a result, the first and second impurity-containing bodies 54 and 55 can be formed at a time, so that the steps required to diffuse the impurities can be further simplified. The 1st and 2nd impurity containing bodies 54 and 55 are not limited to this, You may form separately.

  In the first embodiment of the present invention described above, the first and second laser element portions 22 and 23 oscillate at different oscillation wavelengths, but are not limited to this, and are configured to oscillate at the same oscillation wavelength. May be. The monolithic semiconductor laser element includes two laser element units, but is not limited to this, and may include three or more laser element units. In this case, the three or more laser element units may be configured to oscillate at different oscillation wavelengths or may be configured to oscillate at the same oscillation wavelength.

  When three or more laser element units are provided, the workpiece 51 includes the same number of semiconductor laser constituent units as the number of laser element units. Even when three or more semiconductor laser components are provided in this way, the impurity-containing material is disposed on the arrangement portion included in the diffusion region in one surface portion in the thickness direction of each semiconductor laser component in the impurity-containing material arrangement step. Diffusion of impurities in the diffusion region of each semiconductor laser component is the ratio of one surface in the thickness direction of the contact portion in contact with the impurity-containing body to the entire one surface in the thickness direction of the disposed portion. By appropriately selecting in consideration of the speed, it is possible to simultaneously diffuse impurities throughout the entire portion of the active layer of each semiconductor laser component in the diffusion region in the diffusion step.

  In the first embodiment, the first and second impurity-containing bodies 54 and 55 contain zinc (Zn) as an impurity, and this Zn is diffused into the first and second diffusion regions 56 and 57 in the diffusion process. The Impurities diffused in the first and second diffusion regions 56 and 57 are not limited to zinc (Zn), but may be any material that can disorder the first and second active layers 34 and 44 by diffusion. For example, magnesium (Mg) may be used. When the impurity is Mg, the first and second impurity containing bodies 54 and 55 are realized by, for example, a magnesium oxide (MgO) film.

  In the first embodiment, the semiconductor substrate 21 is an N-type semiconductor substrate having N-type conductivity, but is not limited thereto, and may be a P-type semiconductor substrate having P-type conductivity. When the semiconductor substrate 21 is a P-type semiconductor substrate, the conductivity of each layer constituting the first and second semiconductor laser components 22A, 23A is selected to be opposite to the conductivity in the first embodiment.

  As described above, in the first embodiment of the present invention, impurities are diffused into the portions of the first and second active layers 34 and 44 included in the corresponding diffusion regions 56 and 57 by the impurity diffusion method of the present invention. The impurity-containing body arranging step and the diffusion step described above constitute the impurity diffusion method of the present invention. According to the impurity diffusion method of the present invention, the second impurity average supply amount is less than the first impurity average supply amount by making the first impurity content ratio larger than the second impurity content ratio as described above. can do. Thereby, when the diffusion rate of the impurity in the second diffusion region 57 is higher than the diffusion rate of the impurity in the first diffusion region 56, the impurity is diffused from the first impurity containing body 54 to the first active layer 34. It is possible to suppress a difference between the time required for the diffusion and the time required for the impurities to diffuse from the second impurity containing body 55 to the second active layer 44.

  Since it is possible to suppress a difference in the time required for the impurity to diffuse to the first and second active layers 34 and 44 in this way, the first and second diffusion regions 56 can be suppressed in the diffusion process. , 57 is heated to both the portion included in the first diffusion region 56 of the first active layer 34 and the portion included in the second diffusion region 57 of the second active layer 44. Impurities can be diffused. Therefore, the step of diffusing impurities into the portion of the first semiconductor layer 34 included in the first diffusion region 56 and the step of diffusing the impurity into the portion of the second semiconductor layer 44 included in the second diffusion region 57 Compared with the case where the steps are performed separately, the steps required for diffusing impurities can be simplified.

  Such an impurity diffusion method of the present invention is not limited to the manufacture of a monolithic semiconductor laser device, and the first processed portion including the first semiconductor layer and the first semiconductor layer are formed of different semiconductor materials. The second processed portion including the second semiconductor layer diffuses impurities into the diffusion region including at least a part of the first and second semiconductor layers with respect to the processed object provided on one surface portion in the thickness direction of the substrate. It can be used when

It is sectional drawing which shows the semiconductor laser element 20 manufactured with the manufacturing method of 1st Embodiment of this invention. It is a flowchart which shows the manufacturing method of the semiconductor element 20 of 1st Embodiment of this invention. It is a figure which shows the manufacturing process in the manufacturing method of 1st Embodiment. It is a figure which shows the manufacturing process in the manufacturing method of 1st Embodiment. It is a figure which shows the manufacturing process in the manufacturing method of 1st Embodiment. It is a figure which shows the manufacturing process in the manufacturing method of 1st Embodiment. It is a figure which shows the manufacturing process in the manufacturing method of 1st Embodiment. It is a figure which shows the manufacturing process in the manufacturing method of 1st Embodiment. It is a figure which shows the manufacturing process in the manufacturing method of 1st Embodiment. It is a figure which shows the manufacturing process in the manufacturing method of 1st Embodiment. 1 is a cross-sectional view showing a monolithic semiconductor laser element 1. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 20 Semiconductor laser element 21 N type semiconductor substrate 22 1st laser element part 22A 1st semiconductor laser structure part 23 2nd laser element part 23A 2nd semiconductor laser structure part 24 Insulating film 25 1st P side electrode 26 2nd P side electrode 27 N Side electrode 28 First ridge portion 29 Second ridge portion 34 First active layer 44 Second active layer 51 Object 71 First arrangement portion 72 Second arrangement portion 73 First contact portion 74 Second contact portion

Claims (10)

A first processed portion including a first semiconductor layer formed of a semiconductor material and a second processed portion including a second semiconductor layer formed of a semiconductor material different from the first semiconductor layer are in the thickness direction of the substrate. Among the objects to be processed provided on one surface portion, the second diffusion region includes at least a portion of the first semiconductor layer and includes a first diffusion region that is predetermined in the first processing portion and at least a portion of the second semiconductor layer. An impurity diffusion method in which the impurity is diffused into a second diffusion region that is predetermined in the processing target and has a higher impurity diffusion rate than the first diffusion region,
Of the one surface portion in the thickness direction of the first processed portion, the first impurity-containing body containing the impurity is arranged in the first arrangement portion included in the first diffusion region, and the thickness direction of the second processed portion An impurity-containing body disposing step of disposing a second impurity-containing body containing the impurity in a second disposition portion included in the second diffusion region in one surface portion;
Diffusion in which the first diffusion region in which the first impurity-containing body is disposed and the second diffusion region in which the second impurity-containing body is disposed are heated to diffuse the impurities in the first and second diffusion regions. Process,
The proportion of the first contact portion in contact with the first impurity-containing body in the thickness direction in the first arrangement portion in the entire thickness direction of the first arrangement portion is the second impurity in the second arrangement portion. The impurity diffusion method, wherein the one surface in the thickness direction of the second contact portion in contact with the containing body is larger than the proportion of the entire surface in the thickness direction of the second arrangement portion. The impurity-containing body arranging step is
An impurity layer forming step of forming an impurity layer containing the impurity so as to cover the first and second arrangement portions;
The first and second impurity layers formed on the remaining portion excluding the first contact portion in the first arrangement portion and the remaining portion excluding the second contact portion in the second arrangement portion are removed. The impurity diffusion method according to claim 1, further comprising a removal step of forming an impurity-containing body. The first portion to be processed is a first semiconductor laser constituent portion in which a first active layer that is a first semiconductor layer and two first cladding layers that sandwich the first active layer are stacked in the thickness direction of the substrate. ,
The second processed part is a second semiconductor laser constituent part in which a second active layer that is a second semiconductor layer and two second clad layers that sandwich the second active layer are stacked in the thickness direction of the substrate. The impurity diffusion method according to claim 1, wherein the impurity diffusion method is performed. Each of the first and second active layers is formed in a quantum well structure including a well layer and a barrier layer having a larger energy band gap than the well layer,
The impurity diffusion method according to claim 3, wherein the impurity is zinc (Zn). Of the two first cladding layers, the first cladding layer interposed between the first active layer and the first impurity-containing body is Al _x1 Ga _y1 In _1-x1-y1 P (0 <x1 <1, An aluminum-gallium-indium-phosphorus compound semiconductor material represented by 0 <y1 <1, x1 + y1 <1),
Of the two second cladding layers, the second cladding layer interposed between the second active layer and the second impurity-containing body is Al _x2 Ga _y2 In _1-x2-y2 P (0 <x2 <1, 5. The impurity diffusion method according to claim 3, wherein the impurity diffusion method is formed of an aluminum-gallium-indium-phosphorus compound semiconductor material represented by 0 <y2 <1, x2 + y2 <1). The first active layer is formed of an aluminum-gallium-arsenic compound semiconductor material represented by Al _h Ga _1-h As (0 <h <1),
The second active layer is made of an aluminum-gallium-indium-phosphorus compound semiconductor material represented by Al _j Ga _k In _1-j-k P (0 ≦ j <1, 0 <k <1, j + k <1). The impurity diffusion method according to claim 3, wherein the impurity diffusion method is formed. Divide the ratio of one surface in the thickness direction of the first contact portion to the entire surface in the thickness direction of the first arrangement portion by the ratio of one surface in the thickness direction of the second contact portion to the entire surface in the thickness direction of the second arrangement portion. The contained body area ratio is 8 or more and 20 or less,
The impurity diffusion method according to claim 6, wherein the first and second impurity-containing bodies have a dimension in the thickness direction of 30 nm to 300 nm.   The impurity diffusion method according to claim 7, wherein in the diffusion step, the first and second diffusion regions are heated at a temperature of 600 ° C. to 640 ° C. for 30 minutes to 180 minutes. A method for manufacturing a monolithic semiconductor laser device, wherein the first and second semiconductor laser constituent portions are provided on one surface portion in the thickness direction of the substrate,
A first semiconductor laser component is formed by laminating a first active layer formed of a semiconductor material and two first cladding layers sandwiching the first active layer in the thickness direction of the substrate on one surface portion in the thickness direction of the substrate. A second semiconductor laser structure is formed by stacking a second active layer formed of a semiconductor material different from the first active layer and two second cladding layers sandwiching the second active layer in the thickness direction of the substrate. A preparation step in which a first and second semiconductor laser components are provided on a surface portion in the thickness direction of the substrate;
A first diffusion region predetermined in the first semiconductor laser component including one end of the first active layer in the resonator direction perpendicular to the thickness direction of the substrate, and one end of the second active layer in the resonator direction The second and second active layers are diffused into a second diffusion region having a diffusion rate higher than that of the first diffusion region. A window structure region forming step of forming a window structure region at one end,
9. A method of manufacturing a monolithic semiconductor laser device, wherein the impurity is diffused by the impurity diffusion method according to claim 3 in the window structure region forming step.   A monolithic semiconductor laser device manufactured by the method for manufacturing a monolithic semiconductor laser device according to claim 9.

Images