JP2008263227A5

JP2008263227A5 -

Info

Publication number: JP2008263227A5
Application number: JP2008177064A
Authority: JP
Filing date: 2008-07-07
Publication date: 2010-02-04
Anticipated expiration: 2024-12-10

Claims

A photoelectric conversion element including a charge accumulation region of a first conductivity type and a plurality of impurity regions of a second conductivity type; a transfer MOS transistor for transferring charges generated in the photoelectric conversion element; and the transfer MOS A first-conductivity-type impurity region to which charge is transferred by a transistor, and a CMOS-type photoelectric conversion device disposed on a first-conductivity-type semiconductor substrate,
The plurality of second conductivity type impurity regions are continuously arranged from a lower part of the charge storage region to a lower part of the gate electrode of the transfer MOS transistor, and at least the first impurity region and the first impurity A second impurity region disposed between the region and the charge storage region, and a third impurity region disposed between the second impurity region and the charge storage region,
The concentration C1 of the impurity concentration peak of the first impurity region, the concentration C2 of the impurity concentration peak of the second impurity region, and the concentration C3 of the impurity concentration peak of the third impurity region are C2 <C3 < C1
Satisfy the relationship
The CMOS photoelectric conversion device has a second conductivity type channel dope region disposed above the third impurity region and below the gate electrode of the transfer MOS transistor. Photoelectric conversion device.

2. The CMOS photoelectric conversion device according to claim 1, wherein an impurity concentration peak of the third impurity region is arranged on the charge storage region side of the third impurity region.

3. The relationship between the concentration C1 of the impurity concentration peak of the first impurity region and the concentration C2 of the impurity concentration peak of the second impurity region is 3 × C2 ≦ C1. The described CMOS photoelectric conversion device.

The relationship between the concentration C1 of the impurity concentration peak of the first impurity region and the concentration C2 of the impurity concentration peak of the second impurity region is 5 × C2 ≦ C1. CMOS photoelectric conversion device.

The concentration C1 of the impurity concentration peak of the first impurity region is 1 × 10 ¹⁶ cm ⁻³ <C1 <1 × 10 ¹⁸ cm ⁻³ ,
The concentration C2 of the impurity concentration peak in the second impurity region is 1 × 10 ¹⁵ cm ⁻³ <C2 <5 × 10 ¹⁶ cm ⁻³ ,
The impurity concentration peak concentration C3 of the third impurity region is 2 × 10 ¹⁵ cm ⁻³ <C3 <2 × 10 ¹⁷ cm ^{−3. 5.} CMOS type photoelectric conversion device.

The plurality of impurity regions of the second conductivity type are continuously arranged from a lower part of the charge storage region to a lower part of an element isolation part adjacent to the photoelectric conversion element. 6. The CMOS photoelectric conversion device according to any one of 5 above.

A photoelectric conversion element including a charge accumulation region of a first conductivity type and an impurity region of a second conductivity type, a transfer MOS transistor for transferring charges generated in the photoelectric conversion element, and the transfer MOS transistor A first-conductivity-type impurity region to which charges are transferred, and a CMOS-type photoelectric conversion device arranged on a first-conductivity-type semiconductor substrate,
The impurity region of the second conductivity type is continuously arranged from the lower part of the charge storage region to the lower part of the gate electrode of the transfer MOS transistor, and is positioned in order from the deep part of the semiconductor substrate toward the charge storage part. Having at least a first impurity concentration peak, a second impurity concentration peak, and a third impurity concentration peak,
The concentration C1 of the first impurity concentration peak, the concentration C2 of the second impurity concentration peak, and the concentration C3 of the third impurity concentration peak are:
C2 <C3 <C1
Satisfy the relationship
The CMOS photoelectric conversion device has a second conductivity type impurity region disposed above the second conductivity type impurity region and below the gate electrode of the transfer MOS transistor. Type photoelectric conversion device.

8. The CMOS photoelectric conversion device according to claim 1, wherein the photoelectric conversion element has a second conductivity type surface impurity region formed in contact with a surface side of the charge storage region. 9.

A CMOS photoelectric conversion device according to any one of claims 1 to 8,
An optical system for imaging light onto the CMOS photoelectric conversion device;
An image pickup system comprising: a signal processing circuit that processes a signal from the CMOS photoelectric conversion device.