JP2008260671A - Single crystal pulling apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus which can avoid the damage to a heater by reducing the load to the heater due to a force by the interaction of the electric current and the magnetic field. <P>SOLUTION: In the apparatus, a direct current is supplied to a resistance type heater 4 based on a given voltage applied to the electrodes connected to the heater 4, slits 4a and 4b are formed so as to satisfy the condition of 2≤(L/D)≤4, wherein L is the size of the width in the horizontal direction of a current path formed by the slits 4a and 4b at the upper end of electrodes connection side of the resistance type heater 4 and D is the size of the distance in the height direction from the upper end of the heater to the upper end of the slits, and terminal parts 4c that are fitted to electrically conductive cramp members connected to the electrodes are formed at the lower end of the resistance type heater 4, wherein the terminal parts 4c are screwed to the cramp members. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a single crystal pulling apparatus that pulls up a single crystal while growing it by the Czochralski method (hereinafter referred to as “CZ method”).

  The CZ method is widely used for the growth of silicon single crystals. In this method, the seed crystal is brought into contact with the surface of the silicon melt contained in the crucible, the crucible is rotated, and the seed crystal is pulled upward while rotating in the opposite direction. In this way, a single crystal is formed.

  As shown in FIG. 5, in the pulling method using the conventional CZ method, first, raw material polysilicon is loaded into a quartz glass crucible 51 and heated by a heater 52 to obtain a silicon melt M. Thereafter, the seed crystal P is held by the seed chuck 53 provided at the tip of the pulling wire 50, and the silicon single crystal C is pulled by bringing the seed crystal P into contact with the silicon melt M.

In general, prior to the start of pulling, after the temperature of the silicon melt M is stabilized, as shown in FIG. 6, necking is performed in which the seed crystal P is brought into contact with the silicon melt M to dissolve the tip of the seed crystal P. Necking is an indispensable process for removing dislocations generated in a silicon single crystal due to thermal shock generated by contact between the seed crystal P and the silicon melt M. The neck portion P1 is formed by this necking. The neck portion P1 is generally required to have a diameter of 3 to 7 mm and a length of 30 to 40 mm or more.
Moreover, as a process after the start of pulling, after necking is finished, a crown process for forming a diameter-expanded part in which the crystal is expanded to the diameter of the straight body part, a straight body process for growing a single crystal (straight body part) to be a product, A tail process is performed in which the diameter of the single crystal after the straight body process is gradually reduced to form a reduced diameter part.

By the way, in recent years, the so-called MCZ method has been proposed in which the CZ method is improved to pull up the silicon single crystal while applying a magnetic field to the silicon melt and to improve the characteristics of the silicon single crystal by suppressing the convection of the silicon melt. Are known.
However, when the MCZ method is performed, there is a technical problem that a load is applied to the heater 52 because the force generated by the interaction between the current and the magnetic field is applied, and the life of the heater 52 is shortened.

  That is, the heater 52 has a cylindrical shape as shown in the sectional view of FIG. 7A and the plan view of FIG. 7B. The slit 52b which goes to is provided alternately. For this reason, the current flowing from the electrode 54 flows in a zigzag manner up and down. Here, a force F for rotating the heater 52 is exerted by the interaction between the current flowing up and down in each segment of the heater 52 (portions delimited by the slits) and the magnetic field B applied in the horizontal direction. For this reason, conventionally, it is necessary to strongly fix the terminal portion 52a of the heater 52 and the clamp 55 with the wedge 56 so that the heater 52 does not rotate. As a result, cracks and the like are easily generated in the terminal portion. The life of 52 was shortened.

  In recent years, a crucible having a diameter of 600 mm or more must be used to produce a silicon single crystal having a large diameter of 10 to 16 inches, and the power and magnetic force to be used are increased. Not only the force for rotating the heater 52 is increased, but also a force for lifting the heater 52 is added. For this reason, there is a problem that the terminal portion is more likely to be damaged and the wedges are easily removed.

In order to deal with such a technical problem, in Patent Document 1, the direction of magnetic lines passing through the centers of magnet coils (electromagnets: not shown) arranged on the left and right sides of the heater and horizontal when a DC current is supplied to the heater. Disclosed is a configuration in which the electrode and the magnet coil are arranged so that the direction of the current generated in the direction is in a state rotated counterclockwise by an angle larger than 0 ° and smaller than 180 ° (excluding 90 °). Yes.
According to such an arrangement of the electrode and the magnet coil, it is described that the force due to the interaction between the current and the magnetic field is constantly applied downward as a whole, and troubles such as the heater floating phenomenon are solved. ing.
Japanese Patent No. 3402401

However, in the heater structure shown in FIG. 7, the current supplied from one electrode to the heater first flows upward from the electrode through the current path formed by the slit, and is separated left and right in the upper part of the heater. Then, currents merge on the other electrode side.
That is, in the upper and lower portions of the heater (slit) on the electrode connection side, the direction in which the current flows is opposite, and thus an upward or downward force acts on the magnetic flux direction of the horizontal magnetic field. However, a twisting force is generated in the upper and lower portions on the electrode connection side, and there is a possibility that the wedges may come off or the upper part of the heater may be deformed.

  The present invention has been made under the circumstances as described above. The raw silicon in the crucible is melted by a heater, and a magnetic field is applied to the silicon melt formed in the crucible by the Czochralski method. In a single crystal pulling apparatus for pulling a single crystal from the crucible, a single crystal pulling apparatus capable of reducing a load on a heater due to an interaction between an electric current and a magnetic field and preventing breakage of the heater is provided. With the goal.

  In order to solve the above-described problems, a single crystal pulling apparatus according to the present invention includes loading raw silicon into a crucible in a furnace body, and a slit that extends upward from the lower end and a slit that extends downward from the upper end to a cylindrical outer periphery. Pulling up single crystal by Czochralski method while melting raw material silicon in crucible with resistance heater formed alternately and applying magnetic field to molten silicon melt in horizontal direction by electromagnet The resistance heater is heated by being supplied with a direct current based on a predetermined voltage applied from an electrode electrically connected to the heater, and at the upper end of the resistance heater on the electrode connection side. When the horizontal width dimension of the current path formed by the slit is L, and the distance dimension in the height direction from the upper end of the heater to the upper end of the slit is D, The heater is formed so as to satisfy the condition of 2 ≦ (L / D) ≦ 4, and a pair of terminal portions opposed to the diameter direction of the heater is formed at the lower end of the resistance heater, It is characterized in that it is screwed to a conductive clamp member connected to the electrode.

By thus screwing the resistance heater to the clamp member, it is possible to prevent the floating phenomenon and deformation at the lower part of the heater.
Further, in the upper part on the electrode side of the resistance heater, the ratio between the horizontal width dimension L of the current path formed by the slit and the distance dimension D in the height direction from the upper end of the heater to the upper end of the slit is 2 ≦ (L / D) By forming so as to satisfy the condition of ≦ 4, it is possible to absorb the twisting force generated in the upper part of the heater and prevent the heater from being deformed.

Further, from the state where the direction of the magnetic force line passing through the center of the crucible matches the direction of the current generated in the horizontal direction when a direct current is supplied to the resistance heater, the counterclockwise direction is greater than 0 ° and smaller than 180 °. It is desirable to arrange the terminal part and the electromagnet so as to be in a state rotated by an angle (except 90 °).
By configuring in this way, the force due to the interaction between the current flowing in the horizontal direction and the magnetic field is always applied downward as the whole heater, and the occurrence of the floating phenomenon can be suppressed.

  According to the present invention, single crystal pulling is performed by melting the raw material silicon in the crucible with a heater, applying a magnetic field to the silicon melt formed in the crucible, and pulling the single crystal from the crucible by the Czochralski method. In the apparatus, it is possible to obtain a single crystal pulling apparatus capable of reducing the load on the heater due to the interaction between the current and the magnetic field and preventing the heater from being damaged.

Embodiments of a single crystal pulling apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing a main part of a single crystal pulling apparatus 1 in which a method for producing a single crystal according to the present invention is carried out.
This single crystal pulling apparatus 1 includes a furnace body 2 formed by superposing a pull chamber 2b on a cylindrical main chamber 2a, a crucible 3 provided in the furnace body 2, and a semiconductor loaded in the crucible 3. A cylindrical resistance heater 4 (hereinafter simply referred to as heater 4) for melting a raw material (raw material polysilicon) is provided. The crucible 3 has a double structure, and is composed of a quartz glass crucible 3a on the inside and a graphite crucible 3b on the outside. A cylindrical heat insulating cylinder 12 is provided on the outer periphery of the heater 4.

The pulling mechanism for pulling up the single crystal C to be grown has a pulling wire 5 wound up by a winding mechanism (not shown), and the seed crystal P is held by a seed chuck 6 provided at the tip of the wire 5. .
The crucible 3 is supported by a support shaft 7. The support shaft 7 is rotated around an axis in the pulling direction by a motor (not shown) and can be moved up and down by an elevating device (not shown). . That is, the crucible 3 is rotated around the pulling axis when the single crystal C is pulled up (grown), and the height position of the crucible 3 is adjusted to adjust the melt height accompanying the decrease in the silicon melt M. Is adjustable.

As shown in FIG. 1, magnet coils 13 (electromagnets) are installed on both sides of the main chamber 2a. That is, in this embodiment, the MCZ method (Magnetic field applied CZ method) is used in which a single crystal is grown by applying a horizontal magnetic field in the silicon melt of the crucible 3.
The magnet coil 13 is configured so that its height position can be adjusted by an elevating mechanism (not shown), and the relative position in the height direction with the silicon melt M when the single crystal is pulled is controlled. Yes.

Next, the structure of the heater 4 will be described in detail. FIG. 2 is a cross-sectional view of the heater 4, and FIG. 3 is a plan view of the heater 4.
As shown in FIGS. 2 and 3, the cylindrical heater 4 is formed with slits 4a extending downward from the upper end and slits 4b extending upward from the lower end alternately along the circumferential direction.
At the lower end of the heater 4, a pair of terminal portions 4 c that are opposed to each other in the diametrical direction are formed in a plate shape so as to protrude toward the outer peripheral side, and three terminal portions 4 c are provided for each of the conductive clamp members 16. The bolt 17 is screwed and fixed. A predetermined voltage is applied to the terminal portion 4c from electrode rods (electrodes) 18 and 19 connected to the through hole 16a of the clamp member 16.

In the heater 4, a predetermined voltage is applied to the terminal portion 4c, whereby a direct current is supplied from one terminal portion 4c to the other terminal portion 4c. At that time, as shown in FIG. 4, the current I first flows upward from one terminal portion 4 c and is divided into left and right at the upper portion of the heater 4, and becomes I / 2. Thereafter, the current flows in a zigzag shape formed by the slits 4a and 4b in both the left and right directions, and merges on the other electrode side.
By forming a current flow in this manner, the entire heater 4 can be uniformly heated, and the entire crucible 3 can be efficiently heated.

However, in this case, a torsional force is generated in the upper and lower portions (particularly the upper portion) of the heater 4 on the electrode connection side due to the interaction between the current divided in the left-right direction from the one electrode side and the magnetic field lines B (magnetic field) (see FIG. F (N) shown in FIG. However, as described above, the terminal portions 4c of the heater 4 are fixed by the three bolts 17 respectively, so that the floating phenomenon of the heater 4 and the deformation of the heater 4 do not occur in the lower part. Yes.
In addition, it is preferable that the number of bolts 17, the diameter, the depth dimension of the threaded portion to the clamp member 16, and the like are determined by the thickness dimension, the diameter, and the like of the heater 4.

In addition, in the upper part of the electrode connection side of the heater 4, as shown in FIG. 4, the horizontal dimension L of the current path formed by the slit 4a and the distance dimension in the height direction from the upper end of the heater to the upper end of the slit 4a. The ratio to D is formed so as to satisfy the condition of 2 ≦ (L / D) ≦ 4.
Thereby, the twisting force generated in the upper part of the heater 4 is reduced, and the deformation of the heater 4 is prevented.

Further, as shown in the plan view of FIG. 3, the pair of terminal portions 4c has a state in which the direction of the magnetic lines of force B coincides with the direction of the current generated in the horizontal direction when a direct current is supplied to the terminal portion 4c. Then, they are arranged so as to be rotated counterclockwise by an angle θ (excluding 90 °) larger than 0 ° and smaller than 180 °. 3 shows a state rotated by 45 °, and an arrow 9 indicates the direction of current generated in the horizontal direction when a direct current is supplied to the heater 4. FIG.
Thus, according to Fleming's left-hand rule, the force generated by the interaction between the current and the magnetic field generated in the horizontal direction cancels out as a whole, and the resultant force is reduced, thereby suppressing the occurrence of the floating phenomenon.

  As described above, according to the embodiment of the present invention, the heater 4 can be bolted to the clamp member 16 to prevent the floating phenomenon and deformation in the lower part of the heater. Further, in the upper part of the heater 4 on the electrode side, the ratio between the horizontal width dimension L of the current path formed by the slit 4a and the distance dimension D in the height direction from the upper end of the heater to the upper end of the slit 4a is 2 ≦ ( By forming so as to satisfy the condition of (L / D) ≦ 4, the twisting force generated in the upper part of the heater 4 can be reduced and the deformation of the heater 4 can be prevented.

Furthermore, if the state in which the direction of the magnetic lines of force B coincides with the direction of the current generated in the horizontal direction when a direct current is supplied to the heater 4 is set to 0 °, the pair of electrodes (terminal portion 4c) is rotated counterclockwise to 0. By arranging to be rotated at an angle greater than 180 ° and less than 180 ° (except 90 °), the force due to the interaction between the current and the magnetic field generated in the horizontal direction, that is, the upward force as a whole of the pair of electrode portions The downward force is balanced and the occurrence of the floating phenomenon can be suppressed.
Therefore, according to the present invention, it is possible to obtain a single crystal pulling apparatus capable of reducing the load on the heater due to electromagnetic force and preventing the heater from being damaged.

Next, the single crystal pulling apparatus according to the present invention will be further described based on examples. In this example, the effect was verified by actually performing an experiment using the single crystal pulling apparatus having the configuration described in the above embodiment.
[Example 1]
In Example 1, the single crystal pulling apparatus according to the present invention was used for pulling up, and the deformation of the heater, the change in the mounting state, and the like were observed.
The current flowing through the heater is 2300A, the magnetic flux density is 0.3T, and the direction of the magnetic lines passing through the center of the crucible matches the direction of the current generated in the horizontal direction when a direct current is supplied to the heater in a counterclockwise direction. The electrode and the electromagnet were arranged so as to be rotated by 45 ° in the direction.
In addition, when the horizontal width dimension of the current path formed by the slit at the upper end of the electrode connection side of the heater is L, and the distance dimension in the height direction from the upper end of the heater to the upper end of the slit is D, the dimension L and the dimension D The slit was formed so that the ratio, that is, the ratio (L / D) proportional to the bending stress acting on the heater = 3.8.
As a result, contact failure and deformation of the electrode part (terminal part) were not recognized, and the lifetime due to the deformation of the heater was 83% during the operation without a magnetic field as shown in the graph of FIG.

[Comparative Example 1]
In Comparative Example 1, assuming that the horizontal width dimension of the current path formed by the slit at the upper end of the electrode connection side of the heater is L and the distance dimension in the height direction from the upper end of the heater to the upper end of the slit is D, the dimension L and dimension It was formed such that the ratio to D was (L / D) = 5.2 as in the conventional case.
Further, the heater was fixed to the clamp member with a wedge.

As a result, in the latter half of the melting of the raw material silicon where the value of the current flowing through the heater is the largest, a current abnormality that seems to be a contact failure at the electrode position occurred, making it impossible to continue the operation.
Moreover, the damage of the electrode part (terminal part) was confirmed after the furnace cooling (breakage rate 3%).
[Comparative Example 2]
In Comparative Example 2, the heater was fixed to the clamp member with a bolt. Other conditions were the same as in Comparative Example 1.
As a result, contact failure and damage of the electrode part (terminal part) were not confirmed.
However, as the number of operations was repeated, the deformation of the upper and lower portions of the slit increased due to the influence of electromagnetic force, and the life of the heater was about 67% of that during non-magnetic field operation as shown in the graph of FIG.

As a result of the above embodiment, as shown in the graph of FIG. 8, the appropriate range of (L / D) with respect to the life of the heater is (L / D) ≦ 3.8, and 3.8 <(L / D ) <5.2, and unstable (L / D) ≧ 5.2.
Therefore, by fixing the heater to the clamp member with bolts, the rate of breakage of the electrode portion is reduced from 3% to 0%, and the slit is formed so that (L / D) between the dimension L and dimension D is smaller than 3.8. As a result, it was confirmed that the lifetime of the conventional heater 67% with respect to the time of non-magnetic field operation was improved to 83%.
The ratio of the dimension L to the dimension D (L / D) is preferably small, but the ratio (L / D) <2 is difficult in terms of manufacturing technology, and the number of slit divisions depends on the desired resistivity of the heater. Therefore, the preferable range of the ratio (L / D) is 2 ≦ (L / D) ≦ 4.
Therefore, according to the present invention, it was confirmed that a single crystal pulling apparatus capable of reducing the load on the heater due to electromagnetic force and preventing the heater from being damaged can be obtained.

  The present invention relates to a single crystal pulling apparatus that pulls a single crystal by the Czochralski method, and is suitably used in the semiconductor manufacturing industry and the like.

FIG. 1 is a block diagram showing a main part of a single crystal pulling apparatus in which a method for producing a single crystal according to the present invention is carried out. FIG. 2 is a sectional view of a heater of the single crystal pulling apparatus of FIG. FIG. 3 is a plan view of a heater of the single crystal pulling apparatus of FIG. FIG. 4 is a diagram showing a current flow in the heater of the single crystal pulling apparatus of FIG. FIG. 5 is a diagram for explaining a pulling method using the conventional CZ method. FIG. 6 is a diagram for explaining formation of a neck portion in a pulling method using a conventional CZ method. FIG. 7 is a view for explaining a conventional heater fixing method. FIG. 8 is a graph showing the results of the example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Single crystal pulling apparatus 2 Furnace body 2a Main chamber 2b Pull chamber 3 Crucible 3a Quartz glass crucible 3b Graphite crucible 4 Heater 4a Slit 4b Slit 4c Terminal part 5 Wire 6 Seed chuck 13 Magnet coil 17 Bolt C Single crystal M Raw material polysilicon, Silicon melt P seed crystal

Claims (2)

Raw silicon is loaded into the crucible in the furnace, and the raw silicon in the crucible is melted by a resistance heater in which slits extending upward from the lower end and slits extending downward from the upper end are alternately formed on the outer periphery of the cylindrical shape. A single crystal pulling apparatus that pulls a single crystal by the Czochralski method while applying a magnetic field in the horizontal direction to the silicon melt that has been electromagnetized,
The resistance heater is heated by being supplied with a direct current based on a predetermined voltage applied from an electrode electrically connected to the heater,
When the horizontal width dimension of the current path formed by the slit at the electrode connection side upper end of the resistance heater is L and the distance in the height direction from the heater upper end to the slit upper end is D, the slit is 2 ≦ (L / D) ≦ 4 is satisfied, and
A pair of terminal portions opposed to the diameter direction of the heater is formed at the lower end of the resistance heater, and the terminal portions are screwed to a conductive clamp member connected to the electrode. Single crystal pulling device.   An angle (greater than 0 ° and smaller than 180 ° in a counterclockwise direction from a state in which the direction of the lines of magnetic force passing through the center of the crucible matches the direction of the current generated in the horizontal direction when a direct current is supplied to the resistance heater ( The single crystal pulling apparatus according to claim 1, wherein the terminal portion and the electromagnet are arranged so as to be rotated (except 90 °).

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