JP2008252207A - High-frequency module - Google Patents

High-frequency module Download PDF

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JP2008252207A
JP2008252207A JP2007087497A JP2007087497A JP2008252207A JP 2008252207 A JP2008252207 A JP 2008252207A JP 2007087497 A JP2007087497 A JP 2007087497A JP 2007087497 A JP2007087497 A JP 2007087497A JP 2008252207 A JP2008252207 A JP 2008252207A
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bias
control circuit
circuit board
waveguide
frequency
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JP4786579B2 (en
JP2008252207A5 (en
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Koichi Matsuo
浩一 松尾
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Details Of Aerials (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To reduce size, thickness and cost by eliminating fastening with a mechanism component such as a screw. <P>SOLUTION: A high-frequency module has: a high-frequency package 2 having a high-frequency semiconductor element 4 and a dielectric substrate 3 with a dielectric waveguide 30 formed therein; a bias/control circuit board 10 made of a resin substrate where a waveguide 50 connected to the dielectric waveguide 30 is formed and an electronic component 60 is mounted; and an antenna substrate 20 made of a resin substrate having a power feed line 22 connected to the waveguide 50 of the bias/control circuit board 10 and an antenna element 21, wherein the bias/control circuit board 10 and antenna substrate 20 are bonded and fixed to each other with a plurality of conductive bonding members 53 disposed at intervals around a connection part between the waveguide 50 of the bias/control circuit board 10 and the power feed line 22 of the antenna substrate 20. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

この発明は、ミリ波帯、マイクロ波帯の高周波信号を入出力する高周波半導体を有する高周波パッケージと、高周波半導体を駆動するための電子回路部品が搭載されたバイアス・制御回路基板と、スロットアンテナが形成されたアンテナ基板とを有し、これら高周波パッケージ、バイアス・制御回路基板およびアンテナ基板に導波管が形成される高周波モジュールに関するものである。   The present invention relates to a high-frequency package having a high-frequency semiconductor that inputs and outputs high-frequency signals in the millimeter wave band and microwave band, a bias / control circuit board on which electronic circuit components for driving the high-frequency semiconductor are mounted, and a slot antenna. The present invention relates to a high-frequency module having a formed antenna substrate and having a waveguide formed on the high-frequency package, the bias / control circuit substrate, and the antenna substrate.

車載ミリ波レーダなどの高周波モジュールにおいては、通常、レーダ装置用の高周波半導体が搭載された高周波パッケージ、この高周波パッケージにバイアス信号、制御信号を供給する電子回路部品が搭載されたバイアス・制御回路基板、および平面アンテナを有し、この高周波パッケージを搭載する金属キャリアには、平面アンテナと高周波半導体との間で送信波、受信波の伝送に用いられる導波管が設けられる。   In a high-frequency module such as an in-vehicle millimeter wave radar, a bias / control circuit board on which a high-frequency package in which a high-frequency semiconductor for a radar apparatus is mounted and an electronic circuit component for supplying a bias signal and a control signal to the high-frequency package is usually mounted A metal carrier having a planar antenna and mounting the high-frequency package is provided with a waveguide used for transmission of transmission waves and reception waves between the planar antenna and the high-frequency semiconductor.

特許文献１に示されるミリ波ユニットでは、平面アンテナ上に、ＭＭＩＣなどが搭載されるベースシャーシをネジ固定し、このベースシャーシの周りに配設される電気回路基板をベースシャーシにネジ固定し、ベースシャーシおよび電気回路基板をカバーで覆うようにしている。   In the millimeter wave unit shown in Patent Document 1, a base chassis on which an MMIC or the like is mounted is screwed onto a planar antenna, and an electric circuit board disposed around the base chassis is screwed to the base chassis. The base chassis and the electric circuit board are covered with a cover.

特開２００１−９９９１５号公報JP 2001-99915 A

上記特許文献１に示される従来技術では、平面アンテナとベースシャーシとの接合、ベースシャーシと電気回路基板との接合を、それぞれネジで行うようにしているので、構造が複雑となり、コスト、寸法が増大するという問題がある。   In the prior art disclosed in Patent Document 1 above, the planar antenna and the base chassis are joined together with the base chassis and the electric circuit board with screws, so that the structure becomes complicated and the cost and dimensions are reduced. There is a problem of increasing.

この発明は、上記に鑑みてなされたものであり、ネジなどの機構部品による締結を無くし、小型薄型化および低コスト化に寄与する高周波モジュールを得ることを目的とする。   The present invention has been made in view of the above, and an object of the present invention is to obtain a high-frequency module that eliminates fastening by mechanical parts such as screws and contributes to reduction in size and thickness and cost.

上述した課題を解決し、目的を達成するために、本発明は、高周波半導体素子と、該高周波半導体素子を収容し前記高周波半導体素子と信号の授受を行う導波管端子が設けられた誘電体基板とを有した高周波パッケージと、前記高周波パッケージが搭載され、前記導波管端子と接続される導波路が形成され、前記高周波半導体素子を駆動する電子部品が搭載された誘電体基板から成るバイアス・制御回路基板と、該バイアス・制御回路基板が搭載され、前記バイアス・制御回路基板の導波路と接続される給電端子を有した誘電体アンテナ基板と、を備え、前記バイアス・制御回路基板の導波路と前記誘電体アンテナ基板の給電端子との接続部の周りに間隔をおいて配設される複数の導電性接合部材によって前記バイアス・制御回路基板および前記アンテナ基板の接合を行うことを特徴とする。   In order to solve the above-described problems and achieve the object, the present invention provides a dielectric provided with a high-frequency semiconductor element and a waveguide terminal that accommodates the high-frequency semiconductor element and exchanges signals with the high-frequency semiconductor element. A bias comprising: a high frequency package having a substrate; a dielectric substrate on which the high frequency package is mounted, a waveguide connected to the waveguide terminal is formed, and an electronic component for driving the high frequency semiconductor element is mounted A control circuit board; and a dielectric antenna board having a feed terminal connected to a waveguide of the bias / control circuit board on which the bias / control circuit board is mounted, the bias / control circuit board The bias / control circuit board and a plurality of conductive bonding members disposed at intervals around a connection portion between the waveguide and the feeding terminal of the dielectric antenna board, and And performing joining the serial antenna substrate.

また、高周波半導体素子と、該高周波半導体素子を収容し前記高周波半導体素子と信号の授受を行う誘電体導波管が形成された誘電体基板とを有した高周波パッケージと、前記高周波パッケージが搭載され、前記誘電体導波管と接続される導波管が形成され、前記高周波半導体素子を駆動する電子部品が搭載された誘電体基板から成るバイアス・制御回路基板と、該バイアス・制御回路基板が搭載され、前記バイアス・制御回路基板の導波管と接続される給電導波路と、該給電導波路に接続される放射素子を有する誘電体基板から成るアンテナ基板とを備え、前記バイアス・制御回路基板の導波管と前記アンテナ基板の給電導波路との接続部の周りに間隔をおいて配設される複数の導電性接合部材によって前記バイアス・制御回路基板および前記アンテナ基板の接合を行うものであっても良い。   A high-frequency package comprising: a high-frequency semiconductor element; a dielectric substrate on which a dielectric waveguide that accommodates the high-frequency semiconductor element and receives signals from the high-frequency semiconductor element is formed; and the high-frequency package is mounted. A bias / control circuit board comprising a dielectric substrate on which an electronic component for driving the high-frequency semiconductor element is mounted, and a bias / control circuit board formed with a waveguide connected to the dielectric waveguide; A biasing waveguide that is mounted and connected to a waveguide of the bias / control circuit board; and an antenna substrate made of a dielectric substrate having a radiating element connected to the feeding waveguide. The bias / control circuit board and a plurality of conductive bonding members disposed at intervals around a connection portion between the waveguide of the substrate and the feeding waveguide of the antenna substrate, and A performs the junction of the serial antenna substrate may be.

この発明によれば、バイアス・制御回路基板およびアンテナ基板の接合を、バイアス・制御回路基板の導波管とアンテナ基板の給電導波路との接続部の周りに間隔をおいて配設される複数の導電性接合部材によって行うようにしているので、高周波モジュールのネジなどの機構部品による締結がなくなり、小型および薄型化することができるとともに、低コスト化できる。   According to the present invention, a plurality of junctions between the bias / control circuit board and the antenna board are arranged around the connection portion between the waveguide of the bias / control circuit board and the feed waveguide of the antenna board. Therefore, the fastening by the mechanical parts such as screws of the high-frequency module is eliminated, so that the size and thickness can be reduced and the cost can be reduced.

以下に、本発明にかかる高周波モジュールの実施の形態を図面に基づいて詳細に説明する。なお、この実施の形態によりこの発明が限定されるものではない。   Embodiments of a high-frequency module according to the present invention will be described below in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.

図１はこの発明に係る実施の形態の高周波モジュールを示す断面図、図２は高周波モジュールの内部接続をより詳細に示した断面図、図３は高周波モジュールの表面を示す斜視図、図４は高周波モジュールの裏面を示す斜視図である。   1 is a cross-sectional view showing a high-frequency module according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing the internal connection of the high-frequency module in more detail, FIG. 3 is a perspective view showing the surface of the high-frequency module, and FIG. It is a perspective view which shows the back surface of a high frequency module.

図１〜図４に示すように、高周波モジュール１は、高周波パッケージ２と、樹脂基板（誘電体基板）から成るバイアス・制御回路基板１０と、樹脂基板から成り誘電体の平面アンテナ基板（誘電体アンテナ基板）を構成するアンテナ基板２０、電子部品６０などを備えている。アンテナ基板２０上にバイアス・制御回路基板１０が設けられ、バイアス・制御回路基板１０上に高周波パッケージ２および電子部品６０が搭載されている。   As shown in FIGS. 1 to 4, the high-frequency module 1 includes a high-frequency package 2, a bias / control circuit substrate 10 made of a resin substrate (dielectric substrate), and a planar antenna substrate (dielectric material) made of a resin substrate. The antenna board 20 and the electronic component 60 constituting the antenna board) are provided. A bias / control circuit board 10 is provided on the antenna substrate 20, and the high-frequency package 2 and the electronic component 60 are mounted on the bias / control circuit board 10.

高周波パッケージ２は、多層誘電体基板３と、多層誘電体基板３上に搭載されたＭＭＩＣ（Monolithic Microwave Integrated Circuit）などの高周波半導体素子４と、多層誘電体基板３上に高周波半導体素子４を収納する空間を形成する導電性のカバー体５を有している。カバー体５は、多層誘電体基板３との間の収納空間が電磁的にシールドされるように、半田や溶接や導電性接着剤によって多層誘電体基板３上の導電面に接合される。   The high-frequency package 2 houses a multilayer dielectric substrate 3, a high-frequency semiconductor element 4 such as a MMIC (Monolithic Microwave Integrated Circuit) mounted on the multilayer dielectric substrate 3, and the high-frequency semiconductor element 4 on the multilayer dielectric substrate 3. It has a conductive cover body 5 that forms a space to be formed. The cover body 5 is bonded to the conductive surface on the multilayer dielectric substrate 3 by soldering, welding, or a conductive adhesive so that the storage space between the cover body 5 and the multilayer dielectric substrate 3 is electromagnetically shielded.

多層誘電体基板３には、複数の誘電体導波管（誘電体導波路）３０が形成されている、誘電体導波管３０は、所定の間隔で配置された複数の接地導体ビア３２によって構成されており、接地導体ビア３２は表層（上面）、内層、あるいは下面に形成された接地導体３１に接続されている。誘電体導波管３０は、多層誘電体基板３の上面でマイクロストリップ線路３３に接続され、マイクロストリップ線路３３は導電性部材３４を介して高周波半導体素子４に接続される。多層誘電体基板３の下面の接地導体３１には、誘電体の露出した開口が設けられ、誘電体導波管３０の入出力端子である導波管端子３５を構成している。   A plurality of dielectric waveguides (dielectric waveguides) 30 are formed on the multilayer dielectric substrate 3. The dielectric waveguide 30 is formed by a plurality of ground conductor vias 32 arranged at predetermined intervals. The ground conductor via 32 is connected to a ground conductor 31 formed on the surface layer (upper surface), the inner layer, or the lower surface. The dielectric waveguide 30 is connected to the microstrip line 33 on the upper surface of the multilayer dielectric substrate 3, and the microstrip line 33 is connected to the high-frequency semiconductor element 4 through the conductive member 34. The ground conductor 31 on the lower surface of the multilayer dielectric substrate 3 is provided with a dielectric-exposed opening to constitute a waveguide terminal 35 that is an input / output terminal of the dielectric waveguide 30.

多層誘電体基板３の下面（裏面）の接地導体３１上には、誘電体導波管３０の導波管端子３５の周囲を取り囲むように所定の間隔をおいて、複数個の導電性接合部材３６が接合されている。導電性接合部材３６は、球状や樽型の半田バンプ（半田ボール）、金バンプ等によりＢＧＡ（ボールグリッドアレイ）を構成している。   On the ground conductor 31 on the lower surface (back surface) of the multilayer dielectric substrate 3, a plurality of conductive bonding members are provided at predetermined intervals so as to surround the periphery of the waveguide terminal 35 of the dielectric waveguide 30. 36 is joined. The conductive bonding member 36 forms a BGA (ball grid array) with spherical or barrel-shaped solder bumps (solder balls), gold bumps, and the like.

一方、多層誘電体基板３は、図２に示すように、バイアス・制御回路基板１０との間で電気信号を伝送する信号伝送経路を備えている。すなわち、多層誘電体基板３上に搭載された高周波半導体素子４は、導電性部材３４を介して表層信号線路３７に接続され、表層信号線路３７は、さらに信号ビア３８、内層信号線路３９、信号ビア３８を介して多層誘電体基板３の下面の設けられた導体端子４０に接続される。導体端子４０上には、導電性接合部材４１が接合されている。複数の導電性接合部材４１は、球状や樽型の半田バンプ（半田ボール）、金バンプ等によりＢＧＡ（ボールグリッドアレイ）を構成している。   On the other hand, the multilayer dielectric substrate 3 includes a signal transmission path for transmitting an electric signal to and from the bias / control circuit substrate 10 as shown in FIG. That is, the high-frequency semiconductor element 4 mounted on the multilayer dielectric substrate 3 is connected to the surface signal line 37 via the conductive member 34. The surface signal line 37 is further connected to the signal via 38, the inner signal line 39, the signal. It is connected to a conductor terminal 40 provided on the lower surface of the multilayer dielectric substrate 3 through a via 38. A conductive bonding member 41 is bonded onto the conductor terminal 40. The plurality of conductive bonding members 41 constitutes a BGA (ball grid array) with spherical or barrel-shaped solder bumps (solder balls), gold bumps, and the like.

図５は、多層誘電体基板３の下面（裏面）を示す斜視図である。図５に示すように、誘電体が露出された導波管端子３５の周りの接地導体３１上には、所定の間隔をおいて複数の導電性接合部材３６が設けられている。また、多層誘電体基板３の下面の周縁部には、信号接続用の導電性接合部材４１が設けられている。このように、多層誘電体基板３の下面には、複数の導電性接合部材３６および複数の信号接続用の導電性接合部材４１が設けられており、これら導電性接合部材３６，４１によって、多層誘電体基板３とバイアス・制御回路基板１０とを接合固定する。すなわち、本高周波モジュールにおいては、ネジなどの機構的部品を用いることなく、導電性接合部材３６，４１によって多層誘電体基板３とバイアス・制御回路基板１０と接合固定する。なお、多層誘電体基板３の周縁部に導電性接合部材３６を配置して複数の導波管端子３５を多層誘電体基板３上の外側に配列し、導波管端子３５の配列よりも内側に導電性接合部材４１を配置しても良い。   FIG. 5 is a perspective view showing the lower surface (back surface) of the multilayer dielectric substrate 3. As shown in FIG. 5, on the ground conductor 31 around the waveguide terminal 35 where the dielectric is exposed, a plurality of conductive bonding members 36 are provided at predetermined intervals. Further, a conductive connecting member 41 for signal connection is provided on the peripheral edge of the lower surface of the multilayer dielectric substrate 3. As described above, the lower surface of the multilayer dielectric substrate 3 is provided with the plurality of conductive bonding members 36 and the plurality of signal connection conductive bonding members 41, and the conductive bonding members 36, 41 allow the multilayer dielectric members 3 to be multilayered. The dielectric substrate 3 and the bias / control circuit substrate 10 are bonded and fixed. That is, in this high frequency module, the multilayer dielectric substrate 3 and the bias / control circuit substrate 10 are bonded and fixed by the conductive bonding members 36 and 41 without using mechanical parts such as screws. A conductive bonding member 36 is disposed on the peripheral edge of the multilayer dielectric substrate 3 and a plurality of waveguide terminals 35 are arranged on the outer side of the multilayer dielectric substrate 3. Alternatively, the conductive bonding member 41 may be disposed.

バイアス・制御回路基板１０は、ＦＲ−４（Flame Retardant Type 4）などの安価なガラスエポキシ系の樹脂基板で形成されている。バイアス・制御回路基板１０には、多層誘電体基板３の導波管端子３５に電気的に接続される導波管５０が形成されている。導波管５０は、樹脂内に形成された貫通孔の内周面に導体層５１を形成するとともに、貫通孔の縁部周辺に導体層５１と接続される接地導体５２を形成することによって構成される。なお、導波管５０の孔の内周に導体層５１を設ける代わりに、孔の周辺に所定の間隔で複数の導電性スルーホールを配列して電磁シールド壁を構成しても良いし、導波管内部に誘電体を配しその周辺を取り囲むように所定の間隔で複数の導電性スルーホールを配列して電磁シールド壁を設けて誘電体導波管（誘電体導波路）を構成しても良い。高周波パッケージ２を構成する多層誘電体基板３は、導電性接合部材３６を介してバイアス・制御回路基板１０の上面の接地導体５２に接合されている。   The bias / control circuit board 10 is formed of an inexpensive glass epoxy resin board such as FR-4 (Flame Retardant Type 4). A waveguide 50 that is electrically connected to the waveguide terminal 35 of the multilayer dielectric substrate 3 is formed on the bias / control circuit board 10. The waveguide 50 is configured by forming the conductor layer 51 on the inner peripheral surface of the through hole formed in the resin and forming the ground conductor 52 connected to the conductor layer 51 around the edge of the through hole. Is done. Instead of providing the conductor layer 51 on the inner periphery of the hole of the waveguide 50, an electromagnetic shield wall may be configured by arranging a plurality of conductive through holes around the hole at a predetermined interval. A dielectric waveguide (dielectric waveguide) is formed by arranging a dielectric inside the wave tube and arranging a plurality of conductive through holes at predetermined intervals so as to surround the periphery of the wave tube and providing an electromagnetic shield wall. Also good. The multilayer dielectric substrate 3 constituting the high-frequency package 2 is bonded to the ground conductor 52 on the upper surface of the bias / control circuit substrate 10 via a conductive bonding member 36.

図２に示すように、バイアス・制御回路基板１０の表層には、信号接続用の導電性接合部材４１が接合される導体端子４０を有している。導体端子４０は、バイアス・制御回路基板１０の内層の導体ビア４３に接続され、基板内層の導体線路４４に接続される。導体線路４４は導体ビア４５を介してバイアス・制御回路基板１０の表層の導体端子４６に接続される。導体端子４６は電気端子（リード端子）４７を介して電子部品６０の導体端子に接続される。電子部品６０は、半導体集積回路や、電源回路、コンデンサー等から構成される。このような経路で、高周波パッケージ２内の高周波半導体素子４とバイアス・制御回路基板１０上の電子部品６０との間で、制御信号、モニタ信号、ビデオ信号や電源バイアス等の、低周波の電気信号を伝送することができる。   As shown in FIG. 2, the surface layer of the bias / control circuit board 10 has a conductor terminal 40 to which a conductive connecting member 41 for signal connection is bonded. The conductor terminal 40 is connected to the conductor via 43 in the inner layer of the bias / control circuit board 10 and is connected to the conductor line 44 in the inner layer of the board. The conductor line 44 is connected to a conductor terminal 46 on the surface layer of the bias / control circuit board 10 through a conductor via 45. The conductor terminal 46 is connected to the conductor terminal of the electronic component 60 through an electric terminal (lead terminal) 47. The electronic component 60 includes a semiconductor integrated circuit, a power supply circuit, a capacitor, and the like. Low-frequency electrical signals such as control signals, monitor signals, video signals, and power supply biases between the high-frequency semiconductor element 4 in the high-frequency package 2 and the electronic component 60 on the bias / control circuit board 10 through such a path. A signal can be transmitted.

バイアス・制御回路基板１０はの下面（裏面）の接地導体５２上には、導波管５０の開口の周囲を取り囲むように所定の間隔をおいて、複数個の導電性接合部材５３が接合されている。導電性接合部材５３は、球状や樽型や円筒型の半田バンプ（半田ボール）、金バンプ等によりＢＧＡ（ボールグリッドアレイ）を構成している。   A plurality of conductive bonding members 53 are bonded onto the ground conductor 52 on the lower surface (back surface) of the bias / control circuit board 10 at a predetermined interval so as to surround the periphery of the opening of the waveguide 50. ing. The conductive bonding member 53 constitutes a BGA (ball grid array) with spherical, barrel-shaped or cylindrical solder bumps (solder balls), gold bumps, or the like.

アンテナ基板２０は、バイアス・制御回路基板１０と同様、樹脂基板で構成されている。この樹脂基板としては、バイアス・制御回路基板１０のように、ＦＲ−４（ｔａｎδ＝約０．０２）のような通常の誘電体基板に比べて、充分に誘電正接（ｔａｎδ）が小さく、高周波特性上で誘電体損失の小さいものを採用する。例えば、アンテナ基板２０として、誘電正接ｔａｎδが０．００５以下のものを用いるのが良い。   Similar to the bias / control circuit board 10, the antenna board 20 is made of a resin substrate. This resin substrate has a sufficiently low dielectric loss tangent (tan δ) and a high frequency as compared with a normal dielectric substrate such as FR-4 (tan δ = about 0.02), such as the bias / control circuit substrate 10. The one with a small dielectric loss is adopted in terms of characteristics. For example, it is preferable to use the antenna substrate 20 having a dielectric loss tangent tan δ of 0.005 or less.

アンテナ基板２０の下面側には、図４に示すように、送信用または受信用の複数のアンテナ素子（放射素子）２１が設けられており、これらアンテナ素子２１によって平面アレイアンテナを構成している。アンテナ基板２０には、これらアンテナ素子２１と、バイアス・制御回路基板１０の導波管５０を接続するための給電線路２２が形成されている。図１においては、アンテナ素子２１としては、正方形や長方形等の矩形形状のパッチアンテナ（或いはマクロストリップアンテナ）を示している。各アンテナ素子２１はアンテナ基板２０の表面で給電線路２２に接続されたマイクロストリップ線路４２に接続される。また、マイクロストリップ線路４２に接続されるアンテナ基板２０内部の給電線路２２として、送信用の給電導波路および受信用の給電導波路を示している。   As shown in FIG. 4, a plurality of antenna elements (radiating elements) 21 for transmission or reception are provided on the lower surface side of the antenna substrate 20, and these antenna elements 21 constitute a planar array antenna. . On the antenna substrate 20, a feed line 22 for connecting the antenna element 21 and the waveguide 50 of the bias / control circuit substrate 10 is formed. In FIG. 1, as the antenna element 21, a rectangular patch antenna (or a macrostrip antenna) such as a square or a rectangle is shown. Each antenna element 21 is connected to a microstrip line 42 connected to the feed line 22 on the surface of the antenna substrate 20. In addition, as the power feeding line 22 inside the antenna substrate 20 connected to the microstrip line 42, a power feeding waveguide for transmission and a power feeding waveguide for reception are shown.

給電線路２２は、例えば、樹脂内に形成された垂直貫通孔および水平貫通孔の内周面に導体層２４を形成するとともに、垂直貫通孔の縁部周辺に導体層２４と接続される導体層２５を形成することによって誘電体導波路が構成されている。給電線路２２は、バイアス・制御回路基板１０との対向面側の端部にて、バイアス・制御回路基板１０の導波管に接続されるアンテナ給電用のＲＦ（Ｒａｄｉｏ Ｆｒｅｑｕｅｎｃｙ）信号端子（アンテナ給電端子）を構成し、他の端部側がアンテナ素子２１に接続される。   For example, the feeder line 22 includes a conductor layer 24 formed on the inner peripheral surface of the vertical through hole and the horizontal through hole formed in the resin, and a conductor layer connected to the conductor layer 24 around the edge of the vertical through hole. The dielectric waveguide is configured by forming 25. The feed line 22 has an RF (Radio Frequency) signal terminal for antenna feed (antenna feed) connected to the waveguide of the bias / control circuit board 10 at the end on the side facing the bias / control circuit board 10. Terminal) and the other end side is connected to the antenna element 21.

導体層２４の代わりに、垂直貫通孔の周辺に所定の間隔で複数の導電性スルーホールを配列して電磁シールド壁を構成しても良い。バイアス・制御回路基板１０は、導電性接合部材５３を介してアンテナ基板２０の上面の導体層２４に接合されている。なお、誘電体導波路の代わりに、マイクロストリップ線路およびトリプレート線路や同軸線路を設けて給電線路２２を構成しても良い。   Instead of the conductor layer 24, an electromagnetic shield wall may be configured by arranging a plurality of conductive through holes at predetermined intervals around the vertical through hole. The bias / control circuit board 10 is bonded to the conductor layer 24 on the upper surface of the antenna substrate 20 via the conductive bonding member 53. Note that the feed line 22 may be configured by providing a microstrip line, a triplate line, or a coaxial line instead of the dielectric waveguide.

また、バイアス・制御回路基板１０は、補強用の接合部材２６によってもアンテナ基板２０に接合されている。導電性接合部材５３および補強用の接合部材２６は、球状や樽型の半田バンプ（半田ボール）、金バンプ等によりＢＧＡ（ボールグリッドアレイ）を構成している。接合部材２６については接着剤や非導電性の金属を用いても良いが、半田バンプを用いる方が導電性接合部材５３と同じ部材を用いて半田リフローにより、より簡便に接合することができる。   The bias / control circuit board 10 is also joined to the antenna board 20 by a reinforcing joining member 26. The conductive bonding member 53 and the reinforcing bonding member 26 constitute a BGA (ball grid array) with spherical or barrel-shaped solder bumps (solder balls), gold bumps, and the like. For the bonding member 26, an adhesive or a non-conductive metal may be used, but the solder bump can be more easily bonded by solder reflow using the same member as the conductive bonding member 53.

図６は、アンテナ基板２０の上面を示す斜視図である。図６に示すように、アンテナ基板２０の上面における給電線路２２の上面開口２３の周りには、所定の間隔をおいて複数の導電性接合部材５３が設けられている。また、アンテナ基板２０の上面において、その周縁部には、補強用の接合部材２６が設けられている。このように、アンテナ基板２０とバイアス・制御回路基板１０との間には、複数の導電性接合部材５３および補強用の接合部材２６が設けられており、これら導電性接合部材５３，２６によって、アンテナ基板２０とバイアス・制御回路基板１０とを接合固定する。すなわち、本高周波モジュールにおいては、ネジなどの機構的部品を用いることなく、導電性接合部材５３，２６によってアンテナ基板２０とバイアス・制御回路基板１０と接合固定する。なお、補強用の接合部材２６は、必要に応じて設けられるものであり、導電性接合部材５３のみによって所望の接合強度が得られる場合は、省かれる。   FIG. 6 is a perspective view showing the upper surface of the antenna substrate 20. As shown in FIG. 6, a plurality of conductive bonding members 53 are provided around the upper surface opening 23 of the feeder line 22 on the upper surface of the antenna substrate 20 at a predetermined interval. Further, on the upper surface of the antenna substrate 20, a reinforcing bonding member 26 is provided at the peripheral edge portion. As described above, a plurality of conductive bonding members 53 and a reinforcing bonding member 26 are provided between the antenna substrate 20 and the bias / control circuit board 10. The antenna substrate 20 and the bias / control circuit substrate 10 are bonded and fixed. That is, in this high frequency module, the antenna substrate 20 and the bias / control circuit substrate 10 are bonded and fixed by the conductive bonding members 53 and 26 without using mechanical parts such as screws. The reinforcing bonding member 26 is provided as necessary, and is omitted when a desired bonding strength can be obtained only by the conductive bonding member 53.

かかる構成によれば、高周波半導体素子４から出力される高周波信号（送信信号）は、マイクロストリップ線路３３を通じて誘電体導波管３０に伝送され、導波管端子３５から出力される。導波管端子３５から出力された高周波信号は、バイアス・制御回路基板１０の導波管５０を通じて、アンテナ基板２０の給電線路２２に入力される。さらに、アンテナ２０の給電線路２２に入力された高周波信号は、給電線路２２を介してアンテナ素子２１に対し電気的に結合され、アンテナ素子２１から送信電波が放射（出力）される。アンテナ素子２１から出力された送信電波は外部の電波を反射する反射体で反射され、アンテナ２０に返ってくる。アンテナ２０に返って来た受信電波は、送信路と別の同様の受信路を経由して高周波半導体素子４に入力される。   According to this configuration, the high frequency signal (transmission signal) output from the high frequency semiconductor element 4 is transmitted to the dielectric waveguide 30 through the microstrip line 33 and output from the waveguide terminal 35. The high-frequency signal output from the waveguide terminal 35 is input to the feed line 22 of the antenna substrate 20 through the waveguide 50 of the bias / control circuit substrate 10. Further, the high frequency signal input to the feed line 22 of the antenna 20 is electrically coupled to the antenna element 21 via the feed line 22, and a transmission radio wave is radiated (output) from the antenna element 21. The transmission radio wave output from the antenna element 21 is reflected by a reflector that reflects external radio waves and returns to the antenna 20. The received radio wave returned to the antenna 20 is input to the high frequency semiconductor element 4 via a similar reception path different from the transmission path.

上記した高周波モジュールにおいて、高周波パッケージ２とバイアス・制御回路基板１０を接合する導電性接合部材３６，４１と、バイアス・制御回路基板１０とアンテナ基板２０を接合する導電性接合部材５３，２６とを全てハンダで構成した場合、高周波パッケージ２とバイアス・制御回路基板１０との接合、およびバイアス・制御回路基板１０とアンテナ基板２０との接合を同時リフローにより行うことができ、これにより生産効率を向上させることができる。   In the above-described high-frequency module, the conductive bonding members 36 and 41 for bonding the high-frequency package 2 and the bias / control circuit board 10 and the conductive bonding members 53 and 26 for bonding the bias / control circuit board 10 and the antenna board 20 are provided. When all are composed of solder, bonding of the high frequency package 2 and the bias / control circuit board 10 and bonding of the bias / control circuit board 10 and the antenna board 20 can be performed by simultaneous reflow, thereby improving production efficiency. Can be made.

以上説明したように、この実施の形態では、バイアス・制御回路基板１０およびアンテナ基板２０の接合を、バイアス・制御回路基板１０の導波管５０とアンテナ基板２０の給電線路２２との接続部の周りに間隔をおいて配設される複数の導電性接合部材５３によって行うとともに、バイアス・制御回路基板１０と高周波パッケージ２とを、複数の導電性接合部材３６、４１を用いて接合するようにしているので、高周波モジュールのネジなどの機構部品による締結がなくなり、小型（薄型）化するとともに、低コスト化できる。また、バイアス・制御回路基板１０の導波管５０と高周波パッケージ２の導波管端子３５が複数の導電性接合部材３６で一体的に接合され、アンテナ２０の給電線路２２とバイアス・制御回路基板１０の導波管５０が複数の導電性接合部材５３で一体的に接合されているので、高周波パッケージ２の導波管端子３５からアンテナ素子２１までの間で、導波管の分離される部位が無くなり、このため、導波管の接合部で信号漏れを生じる可能性のある箇所が無くなり、チョーク溝を配設する箇所が無くなるので、その加工費用を抑制することができるとともに、漏れ信号を少なくすることができる。   As described above, in this embodiment, the junction between the bias / control circuit board 10 and the antenna board 20 is connected to the connection portion between the waveguide 50 of the bias / control circuit board 10 and the feed line 22 of the antenna board 20. The bias / control circuit board 10 and the high-frequency package 2 are bonded to each other by using a plurality of conductive bonding members 36 and 41, while the plurality of conductive bonding members 53 are arranged around the periphery. Therefore, the fastening by the mechanism parts such as the screws of the high frequency module is eliminated, so that the size can be reduced and the cost can be reduced. In addition, the waveguide 50 of the bias / control circuit board 10 and the waveguide terminal 35 of the high-frequency package 2 are integrally joined by a plurality of conductive joining members 36, and the feed line 22 of the antenna 20 and the bias / control circuit board. Since the ten waveguides 50 are integrally joined by the plurality of conductive joining members 53, the portion of the waveguide separated from the waveguide terminal 35 of the high-frequency package 2 to the antenna element 21. For this reason, there is no place where there is a possibility of signal leakage at the joint portion of the waveguide, and there is no place where the choke groove is disposed. Can be reduced.

なお、バイアス・制御回路基板１０およびアンテナ基板２０を導電性接着剤で接合固定するようにしてもよい。また、バイアス・制御回路基板１０およびアンテナ基板２０を同一基材の多層基板で構成するようにしてもよい。さらにバイアス・制御回路基板１０およびアンテナ基板２０を異種基材の多層基板で構成するようにしてもよい。   The bias / control circuit board 10 and the antenna board 20 may be bonded and fixed with a conductive adhesive. Further, the bias / control circuit board 10 and the antenna board 20 may be formed of a multilayer substrate of the same base material. Furthermore, the bias / control circuit board 10 and the antenna board 20 may be formed of a multilayer board of different base materials.

以上のように、本発明にかかる高周波モジュールは、ミリ波帯、マイクロ波帯の高周波信号を入出力する無線通信装置やレーダに適用すると好適である。   As described above, the high-frequency module according to the present invention is preferably applied to a radio communication apparatus and radar that input and output high-frequency signals in the millimeter wave band and the microwave band.

この発明に係る実施の形態の高周波モジュールを示す断面図である。It is sectional drawing which shows the high frequency module of embodiment concerning this invention. 高周波モジュールの内部接続をより詳細に示した断面図である。It is sectional drawing which showed the internal connection of the high frequency module in detail. 高周波モジュールの表面を示す斜視図である。It is a perspective view which shows the surface of a high frequency module. 高周波モジュールの裏面を示す斜視図である。It is a perspective view which shows the back surface of a high frequency module. 多層誘電体基板の下面を示す斜視図である。It is a perspective view which shows the lower surface of a multilayer dielectric substrate. アンテナ基板の上面を示す斜視図である。It is a perspective view which shows the upper surface of an antenna board | substrate.

符号の説明Explanation of symbols

１ 高周波モジュール
２ 高周波パッケージ
３ 多層誘電体基板
４ 高周波半導体素子
５ カバー体
１０ バイアス・制御回路基板
２０ アンテナ基板
２１ アンテナ素子
２２ 給電線路
２６ 接合部材（補強用）
３０ 誘電体導波管
３５ 導波管端子
３６ 導電性接合部材
４１ 導電性接合部材
５０ 導波管
５３ 導電性接合部材
６０ 電子部品 DESCRIPTION OF SYMBOLS 1 High frequency module 2 High frequency package 3 Multilayer dielectric board 4 High frequency semiconductor element 5 Cover body 10 Bias / control circuit board 20 Antenna board 21 Antenna element 22 Feed line 26 Joining member (for reinforcement)
DESCRIPTION OF SYMBOLS 30 Dielectric waveguide 35 Waveguide terminal 36 Conductive joining member 41 Conductive joining member 50 Waveguide 53 Conductive joining member 60 Electronic component

Claims (6)

高周波半導体素子と、該高周波半導体素子を収容し前記高周波半導体素子と信号の授受を行う導波管端子が設けられた誘電体基板とを有した高周波パッケージと、
前記高周波パッケージが搭載され、前記導波管端子と接続される導波路が形成され、前記高周波半導体素子を駆動する電子部品が搭載された誘電体基板から成るバイアス・制御回路基板と、
該バイアス・制御回路基板が搭載され、前記バイアス・制御回路基板の導波路と接続される給電端子を有した誘電体アンテナ基板と、
を備え、
前記バイアス・制御回路基板の導波路と前記誘電体アンテナ基板の給電端子との接続部の周りに間隔をおいて配設される複数の導電性接合部材によって前記バイアス・制御回路基板および前記アンテナ基板の接合を行うことを特徴とする高周波モジュール。 A high-frequency package having a high-frequency semiconductor element, and a dielectric substrate provided with a waveguide terminal that accommodates the high-frequency semiconductor element and transmits and receives signals to and from the high-frequency semiconductor element;
A bias / control circuit board comprising a dielectric substrate on which the high-frequency package is mounted, a waveguide connected to the waveguide terminal is formed, and an electronic component for driving the high-frequency semiconductor element is mounted;
A dielectric antenna substrate having the feed terminal connected to the waveguide of the bias / control circuit board, wherein the bias / control circuit board is mounted;
With
The bias / control circuit board and the antenna board are provided by a plurality of conductive bonding members disposed at intervals around a connection portion between the waveguide of the bias / control circuit board and the feeding terminal of the dielectric antenna board. A high-frequency module characterized in that bonding is performed. 高周波半導体素子と、該高周波半導体素子を収容し前記高周波半導体素子と信号の授受を行う誘電体導波管が形成された誘電体基板とを有した高周波パッケージと、
前記高周波パッケージが搭載され、前記誘電体導波管と接続される導波管が形成され、前記高周波半導体素子を駆動する電子部品が搭載された誘電体基板から成るバイアス・制御回路基板と、
該バイアス・制御回路基板が搭載され、前記バイアス・制御回路基板の導波管と接続される給電線路と、該給電線路に接続される放射素子を有する誘電体基板から成るアンテナ基板と、
を備え、
前記バイアス・制御回路基板の導波管と前記アンテナ基板の給電導波路との接続部の周りに間隔をおいて配設される複数の導電性接合部材によって前記バイアス・制御回路基板および前記アンテナ基板の接合を行うことを特徴とする高周波モジュール。 A high-frequency package having a high-frequency semiconductor element, and a dielectric substrate on which a dielectric waveguide that accommodates the high-frequency semiconductor element and receives and transmits signals is formed;
A bias / control circuit board comprising a dielectric substrate on which the high-frequency package is mounted, a waveguide connected to the dielectric waveguide is formed, and an electronic component for driving the high-frequency semiconductor element is mounted;
An antenna substrate comprising a dielectric substrate having a feed line mounted with the bias / control circuit board and connected to a waveguide of the bias / control circuit board, and a radiating element connected to the feed line;
With
The bias / control circuit board and the antenna board are formed by a plurality of conductive bonding members disposed at intervals around a connection portion between the waveguide of the bias / control circuit board and the feeding waveguide of the antenna board. A high-frequency module characterized in that bonding is performed. 前記バイアス・制御回路基板および前記アンテナ基板間の接合を補強する、間隔をおいて配置される複数の補強用接合部材をさらに備えることを特徴とする請求項１または請求項２に記載の高周波モジュール。   3. The high-frequency module according to claim 1, further comprising a plurality of reinforcing joining members arranged at intervals to reinforce the joining between the bias / control circuit board and the antenna board. 4. . 前記高周波パッケージの誘電体導波管と前記バイアス・制御回路基板の導波管との接続部の周りに間隔をおいて配設される複数の導電性接合部材によって前記高周波パッケージおよび前記バイアス・制御回路基板の接合を行うことを特徴とする請求項１乃至３の何れか１項に記載の高周波モジュール。   The high-frequency package and the bias / control are provided by a plurality of conductive bonding members disposed at intervals around a connection portion between the dielectric waveguide of the high-frequency package and the waveguide of the bias / control circuit board. The high-frequency module according to claim 1, wherein the circuit boards are joined. 前記高周波パッケージの誘電体基板の下面に、高周波パッケージの高周波半導体素子と前記バイアス・制御回路基板の電子部品との電気接続を行うための複数の電気接続用の導電性接合部材をさらに設け、該複数の電気接続用の導電性接合部材によって前記高周波パッケージおよび前記バイアス・制御回路基板の接合を行うことを特徴とする請求項４に記載の高周波モジュール。   A plurality of conductive connecting members for electrical connection for electrical connection between the high-frequency semiconductor element of the high-frequency package and the electronic component of the bias / control circuit board are further provided on the lower surface of the dielectric substrate of the high-frequency package; 5. The high frequency module according to claim 4, wherein the high frequency package and the bias / control circuit board are joined by a plurality of conductive joining members for electrical connection. 前記バイアス・制御回路基板および前記アンテナ基板の接合を行う複数の導電性接合部材と、前記高周波パッケージおよび前記バイアス・制御回路基板の接合を行う複数の導電性接合部材と、前記複数の電気接続用の導電性接合部材は、ハンダであり、これら導電性接合部材を同時のリフローによりハンダ付けすることを特徴とする請求項５に記載の高周波モジュール。   A plurality of conductive bonding members for bonding the bias / control circuit board and the antenna substrate; a plurality of conductive bonding members for bonding the high-frequency package and the bias / control circuit board; and the plurality of electrical connections. The high-frequency module according to claim 5, wherein the conductive bonding member is solder, and the conductive bonding member is soldered by simultaneous reflow.
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