JP2008251919A - Vertical wafer boat - Google Patents

Vertical wafer boat Download PDF

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JP2008251919A
JP2008251919A JP2007092613A JP2007092613A JP2008251919A JP 2008251919 A JP2008251919 A JP 2008251919A JP 2007092613 A JP2007092613 A JP 2007092613A JP 2007092613 A JP2007092613 A JP 2007092613A JP 2008251919 A JP2008251919 A JP 2008251919A
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wafer
shelf
curved surface
wafer boat
vertical
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JP4812675B2 (en
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Hiromasa Sato
浩昌 佐藤
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Coorstek KK
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Covalent Materials Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a vertical wafer boat that can suppress peeling of a sticking CVD film and has a shelf part in a predetermined shape. <P>SOLUTION: The vertical wafer boat has a plurality of struts 2 each having a shelf part 10 for mounting a wafer W to be subjected to filming processing, and a top plate and a bottom plate where upper and lower end parts of a strut are fixed, and the shelf part 10 has an extension part 11 extended from a flank of the strut 2 and a wafer mount part 12 formed at a tip part of the extension part 11, a top surface of the extension part 11 being formed into a concave surface. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、縦型ウエハボートに関し、特にパーティクルの発生を抑制した縦型ウエハボートに関する。   The present invention relates to a vertical wafer boat, and more particularly to a vertical wafer boat that suppresses generation of particles.

半導体製造プロセスのうちで加熱を伴う工程、例えば、ＬＰ−ＣＶＤ（low pressure−chemical vapor deposition：低圧ＣＶＤ）によるＳｉ3Ｎ4（窒化ケイ素）膜等の成膜工程において、縦型ウエハボードが広く用いられている。
この縦型ウエハボート１は、図７に示すように、成膜処理されるウエハＷを搭載するための棚部２ａ、３ａ，４ａが形成された複数本の支柱２，３，４と、前記支柱２，３，４の上下端部を固定する天板５及び底板６とを備えている。 Vertical wafer boards are widely used in processes involving heating in semiconductor manufacturing processes, for example, film forming processes such as Si 3 N 4 (silicon nitride) films by LP-CVD (low pressure chemical vapor deposition). It is used.
As shown in FIG. 7, the vertical wafer boat 1 includes a plurality of support columns 2, 3, 4 on which shelves 2 a, 3 a, 4 a for mounting wafers W to be deposited are formed, A top plate 5 and a bottom plate 6 for fixing the upper and lower ends of the columns 2, 3, and 4 are provided.

そして、この縦型ウエハボート１に複数のウエハＷを載置し、成膜装置に投入することにより、ウエハＷにＳｉ3Ｎ4（窒化ケイ素）膜等のＣＶＤ膜の形成が行なわれる。このとき、前記ＣＶＤ膜はウエハＷのみならず、縦型ウエハボート１の表面にも付着する。
この付着したＳｉ3Ｎ4等のＣＶＤ膜が成膜工程において剥離すると、パーティクルとなり、ウエハＷ上に形成されるＣＶＤ膜に悪影響を与える。 Then, by placing a plurality of wafers W on the vertical wafer boat 1 and putting them into the film forming apparatus, a CVD film such as a Si 3 N 4 (silicon nitride) film is formed on the wafers W. At this time, the CVD film adheres not only to the wafer W but also to the surface of the vertical wafer boat 1.
When the attached CVD film such as Si 3 N 4 is peeled off in the film forming process, it becomes particles and adversely affects the CVD film formed on the wafer W.

特に、前記棚部２ａは、図８に示すように、支柱２の側面から延設された延設部２ａ１と、この延設部２ａ１の先端部に形成されたウエハ載置部２ａ２とを備え、このウエハ載置部２ａ１の上面２ａ３は、前記延設部２ａ１の上面２ａ４よりも高位置に形成されているため、支柱２とウエハ載置部２ａ２との間に溝部Ａが形成される。そして、この溝部ＡにもＳｉ3Ｎ4等のＣＶＤ膜Ｍが付着する。 In particular, as shown in FIG. 8, the shelf 2a includes an extended portion 2a1 extending from the side surface of the support column 2, and a wafer mounting portion 2a2 formed at the tip of the extended portion 2a1. Since the upper surface 2a3 of the wafer mounting portion 2a1 is formed at a higher position than the upper surface 2a4 of the extending portion 2a1, a groove A is formed between the support column 2 and the wafer mounting portion 2a2. Then, a CVD film M such as Si 3 N 4 adheres to the groove A.

そのため、縦型ウエハボート１の表面に付着したＣＶＤ膜Ｍを除去し、膜の剥離によるパーティクル汚染を防止するため、縦型ウエハボート１の洗浄が行われている。   Therefore, the vertical wafer boat 1 is cleaned in order to remove the CVD film M adhering to the surface of the vertical wafer boat 1 and prevent particle contamination due to film peeling.

また、Ｓｉ3Ｎ4等のＣＶＤ膜の剥がれによるパーティクル汚染を防止するため、特許文献１に示すような特定の表面粗さになした半導体処理用部材が提案されている。
特開２００４−１１１６８６号公報 Further, in order to prevent particle contamination due to peeling of a CVD film such as Si 3 N 4 , a semiconductor processing member having a specific surface roughness as shown in Patent Document 1 has been proposed.
Japanese Patent Laid-Open No. 2004-111686

ところで、半導体処理用部材の表面を、特許文献１に記載されたような特定の表面粗さになした場合には、Ｓｉ3Ｎ4等のＣＶＤ膜の付着性（密着性）に優れ、前記ＣＶＤ膜の剥離によるパーティクル汚染を抑制することができる。
しかしながら、形状が複雑な棚部及びその近傍にあっては、表面粗さによるＣＶＤ膜の剥離抑制効果は小さく、縦型ウエハボートを繰り返し使用することにより、図８に示すように、前記溝部Ａに付着したＣＶＤ膜Ｍは昇降温度のヒートサイクルを受け、熱応力によって溝部Ａの角部に位置するＣＶＤ膜ＭにクラックＭ１が生じ、パーティクルの発生につながっていた。
また、前記溝部Ａに付着したＣＶＤ膜Ｍを洗浄しても、溝部Ａの角部に付着したＣＶＤ膜Ｍを完全に除去するのは難しく、前記溝部Ａの角部にＣＶＤ膜Ｍが残存するという技術的課題があった。 By the way, when the surface of the semiconductor processing member has a specific surface roughness as described in Patent Document 1, the adhesion (adhesion) of a CVD film such as Si 3 N 4 is excellent, Particle contamination due to peeling of the CVD film can be suppressed.
However, in the shelf having a complicated shape and the vicinity thereof, the effect of suppressing the peeling of the CVD film due to the surface roughness is small. By repeatedly using the vertical wafer boat, as shown in FIG. The CVD film M adhering to was subjected to a heat cycle of increasing and decreasing temperatures, and cracks M1 were generated in the CVD film M located at the corners of the groove A due to thermal stress, leading to generation of particles.
Further, even if the CVD film M attached to the groove A is cleaned, it is difficult to completely remove the CVD film M attached to the corner of the groove A, and the CVD film M remains at the corner of the groove A. There was a technical problem.

本発明は、上記技術的課題を解決するためになされたものであり、付着したＣＶＤ膜の剥離を抑制することができる、所定形状の棚部を有する縦型ウエハボートを提供することを目的とするものである。   The present invention has been made to solve the above technical problem, and an object of the present invention is to provide a vertical wafer boat having a shelf portion having a predetermined shape, which can suppress peeling of the attached CVD film. To do.

本発明は上記目的を達成するために成されたものであり、本発明にかかる縦型ウエハボートは、成膜処理されるウエハを搭載するための棚部が形成された複数本の支柱と、前記支柱の上下端部を固定する天板及び底板とを備え、前記棚部は、前記支柱の側面から延設された延設部と、この延設部の先端部に形成されたウエハ載置部とを有し、かつ前記延設部の上面が凹曲面に形成されていることを特徴としている。   The present invention has been made to achieve the above object, and a vertical wafer boat according to the present invention includes a plurality of support columns on which shelves for mounting wafers to be deposited are formed, A top plate and a bottom plate for fixing the upper and lower ends of the column; and the shelf includes an extended portion extending from a side surface of the column, and a wafer mounting formed at a tip portion of the extended portion. And the upper surface of the extended portion is formed in a concave curved surface.

このように前記延設部の上面が凹曲面に形成されているため、延設部の上面に付着したＣＶＤ膜が昇降温度のヒートサイクルを受けても、熱応力が分散され、応力集中が緩和されるため、ＣＶＤ膜のクラックは抑制され、パーティクルの発生が抑制される。
また、延設部の上面に付着したＣＶＤ膜は洗浄により除去でき、ＣＶＤ膜の残存を抑制できる。 As described above, since the upper surface of the extending portion is formed in a concave curved surface, even if the CVD film attached to the upper surface of the extending portion is subjected to a heat cycle of increasing / decreasing temperature, thermal stress is dispersed and stress concentration is reduced. Therefore, cracks in the CVD film are suppressed and generation of particles is suppressed.
Moreover, the CVD film adhering to the upper surface of the extended portion can be removed by cleaning, and the remaining CVD film can be suppressed.

また、前記延設部の上面に形成される凹曲面が、半径３〜２０ｍｍの円弧状曲面であることが望ましい。このように延設部の上面に形成される凹曲面が特定形状で形成されるため、熱応力分散による応力集中緩和がより効果的に達成される。   Moreover, it is desirable that the concave curved surface formed on the upper surface of the extending portion is an arcuate curved surface having a radius of 3 to 20 mm. As described above, since the concave curved surface formed on the upper surface of the extending portion is formed in a specific shape, stress concentration relaxation by thermal stress dispersion is more effectively achieved.

更に、前記ウエハ載置部の上面が凸曲面に形成され、前記延設部上面の凹曲面と滑らかに接続され、ウエハが前記ウエハ載置部に線接触状態で載置されることが望ましい。
このように、ウエハ載置部の上面が凸曲面に形成され、前記延設部上面の凹曲面と滑らかに接続されているため、ＣＶＤ膜の剥離をより抑制することができる。 Further, it is preferable that the upper surface of the wafer mounting portion is formed in a convex curved surface, is smoothly connected to the concave curved surface of the upper surface of the extending portion, and the wafer is mounted on the wafer mounting portion in a line contact state.
As described above, the upper surface of the wafer mounting portion is formed in a convex curved surface, and is smoothly connected to the concave curved surface on the upper surface of the extending portion, so that peeling of the CVD film can be further suppressed.

更に、前記ウエハ載置部が、平面視上、ウエハの半径よりも大きな半径を有する円弧状に形成し、ウエハが前記ウエハ載置部に対して曲線の線接触状態で載置されることが好ましい。
このように、ウエハ載置部が、平面視上、ウエハの半径よりも大きな半径を有する円弧状に形成し、ウエハが前記ウエハ載置部に対して曲線の線接触状態で載置されるため、高温時自重変形したウエハをより安定に保持することができ、ウエハ裏面でのスリップ発生をより効果的に抑制することができる。 Further, the wafer mounting portion is formed in an arc shape having a radius larger than the radius of the wafer in plan view, and the wafer is mounted in a curved line contact state with respect to the wafer mounting portion. preferable.
As described above, the wafer mounting portion is formed in an arc shape having a radius larger than the radius of the wafer in plan view, and the wafer is mounted in a curved line contact state with respect to the wafer mounting portion. In addition, it is possible to hold the wafer deformed by its own weight at a high temperature more stably, and to more effectively suppress the occurrence of slip on the back surface of the wafer.

本発明の縦型ウエハボートによれば、ＣＶＤ膜の剥がれによるパーティクル汚染を抑制することができる。   According to the vertical wafer boat of the present invention, particle contamination due to peeling of the CVD film can be suppressed.

以下に、本発明にかかる一実施形態について、図１及び図２に基づいて説明する。なお、図１は本発明の一実施形態にかかる縦型ウエハボートの棚部を示す要部拡大図、図２は図１に示した縦型ウエハボートの棚部の断面図である。   Below, one Embodiment concerning this invention is described based on FIG.1 and FIG.2. 1 is an enlarged view of a main part showing a shelf part of a vertical wafer boat according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the shelf part of the vertical wafer boat shown in FIG.

本発明の一実施形態にかかる縦型ウエハボートは、基本的には、図７に示した縦型ウエハボート１と同様に、成膜処理されるウエハＷを搭載するための棚部が形成された複数本の支柱２，３，４と、前記支柱２，３，４の上下端部を固定する天板５及び底板６とを備えている。従来の縦型ウエハボートと本発明の一実施形態にかかる縦型ウエハボートとは、棚部の形状が異なっている。そのため、この実施形態の説明では棚部について詳述し、その他の構成の説明は省略する。また、夫々の支柱２，３，４の棚部は同一形状であるため、支柱２に形成された一つの棚部について説明する。   A vertical wafer boat according to an embodiment of the present invention basically has a shelf for mounting wafers W to be deposited, as in the vertical wafer boat 1 shown in FIG. A plurality of support columns 2, 3, 4, and a top plate 5 and a bottom plate 6 for fixing the upper and lower ends of the support columns 2, 3, 4 are provided. A conventional vertical wafer boat and a vertical wafer boat according to an embodiment of the present invention have different shelf shapes. Therefore, in the description of this embodiment, the shelf portion will be described in detail, and description of other configurations will be omitted. Moreover, since the shelf part of each support | pillar 2, 3, and 4 is the same shape, the one shelf part formed in the support | pillar 2 is demonstrated.

図１に示すように、棚部１０は、支柱２の側面から延設された延設部１１と、この延設部１１の先端部に形成されたウエハ載置部１２とを備えている。そして、前記延設部１１の上面１１ａは、上面１１ａの上方に中心を有する半径Ｒ１が、３ｍｍ〜２０ｍｍの円弧によって凹曲面形状に形成されている。また、ウエハ載置部１２の上面１２ａは平面状に形成されている。   As shown in FIG. 1, the shelf portion 10 includes an extending portion 11 that extends from the side surface of the support column 2, and a wafer mounting portion 12 that is formed at the distal end portion of the extending portion 11. And the upper surface 11a of the said extension part 11 is formed in the concave curved surface shape by the circular arc whose radius R1 which has a center above the upper surface 11a is 3 mm-20 mm. Further, the upper surface 12a of the wafer mounting portion 12 is formed in a planar shape.

このように、前記延設部１１の上面１１ａは、凹曲面に形成され、より好ましくは半径Ｒ１が３ｍｍ〜２０ｍｍの円弧状の凹曲面形状に形成されているため、従来ような溝部Ａの角部が存在せず、洗浄により付着したＣＶＤ膜を除去することができ、また仮にＣＶＤ膜が付着した状態で使用したとしても、前記ＣＶＤ膜の応力集中が緩和されるため、付着したＣＶＤ膜クラックの発生を抑制し、パーティクルの発生を抑制することができる。   Thus, the upper surface 11a of the extending portion 11 is formed in a concave curved surface, and more preferably in the shape of an arc-shaped concave curved surface having a radius R1 of 3 mm to 20 mm. Since there is no portion, the attached CVD film can be removed by cleaning, and even if the CVD film is used in a state where the CVD film is attached, the stress concentration of the CVD film is alleviated. The generation of particles can be suppressed and the generation of particles can be suppressed.

次に、本発明の一実施形態にかかる縦型ウエハボートの第一の変形例について、図３、図４に基づいて説明する。なお、図３は本発明の一実施形態の第一の変形例を示す要部拡大図、図４は図３に示した棚部の断面図である。   Next, a first modification of the vertical wafer boat according to one embodiment of the present invention will be described with reference to FIGS. 3 is an enlarged view of a main part showing a first modification of one embodiment of the present invention, and FIG. 4 is a cross-sectional view of the shelf shown in FIG.

この第一の変形例における棚部２０にあっては、この延設部２１の先端部に形成されたウエハ載置部２２の上面２２ａを凸曲面形状に形成すると共に、前記延設部２１の上面２１ａを凹曲面形状に形成し、ウエハ載置部２２の上面２２ａと延設部２１の上面２１ａとを滑らかに接続した点に特徴がある。   In the shelf portion 20 in the first modification, the upper surface 22a of the wafer mounting portion 22 formed at the tip portion of the extension portion 21 is formed in a convex curved shape, and the extension portion 21 The upper surface 21a is formed in a concave curved surface, and the upper surface 22a of the wafer mounting portion 22 and the upper surface 21a of the extending portion 21 are smoothly connected.

上記した図２の棚部１０にあっては、上面１１ａが凹曲面形状に形成された延設部１１から平坦面１２のウエハ載置部１２に移行する部分において稜線Ｘ１が形成される。この稜線Ｘ１部分に付着したＣＶＤ膜は剥離し易い。そのためこの第一の変形例にあっては、その剥離を抑制するために両者を滑らかに接続している。
具体的には、前記延設部２１の上面２１ａの半径Ｒ２は３ｍｍ〜２０ｍｍ〜の円弧状に形成されている。また、ウエハ載置部２２の上面の半径Ｒ３は、５ｍｍ〜１５ｍｍの円弧状に形成されている。 In the shelf 10 of FIG. 2 described above, the ridgeline X1 is formed at a portion where the upper surface 11a is transferred from the extending portion 11 having the concave curved surface shape to the wafer mounting portion 12 on the flat surface 12. The CVD film attached to the ridge line X1 is easy to peel off. Therefore, in this first modification, both are smoothly connected to suppress the separation.
Specifically, the radius R2 of the upper surface 21a of the extending portion 21 is formed in an arc shape of 3 mm to 20 mm. Further, the radius R3 of the upper surface of the wafer mounting portion 22 is formed in an arc shape of 5 mm to 15 mm.

このように、前記延設部２２の上面２２ａの半径Ｒ２が３ｍｍ〜２０ｍｍの円弧状に形成され、ウエハ載置部２２の上面の半径Ｒ３が５ｍｍ〜半径Ｒ１５ｍｍの円弧状に形成されているため、従来の溝部Ａの角部か存在せず、洗浄によりＣＶＤ膜を充分に除去することができ、また仮にＣＶＤ膜が付着したとしても、熱応力の集中が緩和されるため、ＣＶＤ膜のクラックの発生を抑制し、パーティクルの発生を抑制することができる。特に、稜線Ｘ１部分におけるＣＶＤ膜のクラックの発生を抑制し、パーティクルの発生を抑制することができる。   Thus, the radius R2 of the upper surface 22a of the extended portion 22 is formed in an arc shape of 3 mm to 20 mm, and the radius R3 of the upper surface of the wafer mounting portion 22 is formed in an arc shape of 5 mm to radius R15 mm. The corner of the conventional groove A does not exist, and the CVD film can be sufficiently removed by cleaning, and even if the CVD film adheres, the concentration of thermal stress is alleviated. Generation can be suppressed, and generation of particles can be suppressed. In particular, it is possible to suppress the occurrence of cracks in the CVD film at the ridge line X1 and to suppress the generation of particles.

また、前記したように、ウエハ載置部２２の上面２２ａが凸曲面形状（円弧形状）に形成されているため、ウエハは、図２に示した場合と異なりウエハ載置部２２と線接触する（図２に示した場合にはウエハとウエハ載置部と面接触）。
その結果、より安全にウエハＷを保持することができ、ウエハ裏面でのスリップ発生を抑制することができる。 Further, as described above, since the upper surface 22a of the wafer mounting portion 22 is formed in a convex curved surface shape (arc shape), the wafer is in line contact with the wafer mounting portion 22 unlike the case shown in FIG. (In the case shown in FIG. 2, the wafer and the wafer mounting portion are in surface contact).
As a result, the wafer W can be held more safely, and the occurrence of slip on the back surface of the wafer can be suppressed.

尚、図４に示すように、前記支柱２の側面から延設部２１の上面２１ａに移行する部分に角部Ｘ２が生じないように延設部２１の上面２１ａを形成する曲線を設定するのが好ましい。   In addition, as shown in FIG. 4, the curve which forms the upper surface 21a of the extension part 21 is set so that the corner | angular part X2 may not arise in the part which transfers to the upper surface 21a of the extension part 21 from the side surface of the said support | pillar 2. Is preferred.

次に、本発明の一実施形態にかかる縦型ウエハボートの第二の変形例について、図５、図６に基づいて説明する。なお、図５は本発明の一実施形態の第二の変形例を示す要部拡大図、図６は図５に示した棚部の断面図である。   Next, a second modification of the vertical wafer boat according to the embodiment of the present invention will be described with reference to FIGS. FIG. 5 is an enlarged view of a main part showing a second modification of the embodiment of the present invention, and FIG. 6 is a cross-sectional view of the shelf shown in FIG.

この第二の変形例の棚部３０にあっては、前記した第一の変形例の構成を備え、更にこの延設部３１の先端部に形成されたウエハ載置部３２の上面３２ａを、平面視上、円弧状に形成した（棚部３０と同一平面状に中心がある円弧で形成した）点に特徴がある。この半径Ｒ４は、載置されるウエハＷの半径よりも大きく形成されている。   In the shelf 30 of the second modified example, the configuration of the first modified example described above is provided, and the upper surface 32a of the wafer mounting portion 32 formed at the distal end portion of the extending portion 31 is further provided. It is characterized in that it is formed in an arc shape (formed by an arc having a center in the same plane as the shelf 30) in plan view. The radius R4 is formed larger than the radius of the wafer W to be placed.

このように、ウエハ載置部３２の上面３２ａを、平面視上、円弧状に形成されているため、ウエハＷはウエハ載置部３２と線接触となるが、その線接触は曲線状となる。
その結果、ウエハＷが前記ウエハ載置部３２に対して曲線の線接触状態で載置されるため、高温時自重変形したウエハをより安定に保持することができ、ウエハ裏面でのスリップ発生をより効果的に抑制することができる。 Thus, since the upper surface 32a of the wafer mounting portion 32 is formed in an arc shape in plan view, the wafer W is in line contact with the wafer mounting portion 32, but the line contact is curved. .
As a result, since the wafer W is placed in a curved line contact state with respect to the wafer placement portion 32, it is possible to hold the wafer deformed by its own weight at a high temperature more stably, and to generate slip on the back surface of the wafer. It can suppress more effectively.

尚、前記支柱２の側面から延設部３１の上面３１ａに移行する部分に、図４に示すような角部Ｘ２が生じないように延設部３１の上面３１ａを形成する曲線を設定するのが好ましい。   In addition, a curve for forming the upper surface 31a of the extending portion 31 is set so that the corner portion X2 as shown in FIG. 4 does not occur at a portion that transitions from the side surface of the support column 2 to the upper surface 31a of the extending portion 31. Is preferred.

尚、本発明において、この縦型ウエハボート１の基材は特に限定されないが、ＳｉＣ（炭化ケイ素）基材を用いるのが好ましい。ＳｉＣ（炭化ケイ素）基材としては、ＳｉＣの成形体を高温で熱処理した再結晶質のＳｉＣ、あるいはＳｉＣと炭素からなる成形体に溶融シリコンを含浸させた反応焼結ＳｉＣ、または上記した基材にＣＶＤによるＳｉＣコートを施した基材を適宜使用できる。   In the present invention, the substrate of the vertical wafer boat 1 is not particularly limited, but it is preferable to use a SiC (silicon carbide) substrate. Examples of the SiC (silicon carbide) base material include recrystallized SiC obtained by heat-treating a SiC compact at a high temperature, reaction-sintered SiC obtained by impregnating a compact composed of SiC and carbon with molten silicon, or the base material described above. The base material which gave the SiC coat by CVD to can be used suitably.

図１は本発明の一実施形態にかかる縦型ウエハボートの棚部を示す斜視図である。FIG. 1 is a perspective view showing a shelf portion of a vertical wafer boat according to an embodiment of the present invention. 図２は図１に示した棚部の断面図である。2 is a cross-sectional view of the shelf shown in FIG. 図３は本発明の第一の変形例を示す斜視図である。FIG. 3 is a perspective view showing a first modification of the present invention. 図４は図３に示した棚部の断面図である。4 is a cross-sectional view of the shelf shown in FIG. 図５は本発明の第二の変形例を示す斜視図である。FIG. 5 is a perspective view showing a second modification of the present invention. 図６は図５に示した棚部の断面図である。6 is a cross-sectional view of the shelf shown in FIG. 図７は従来の縦型ウエハボートの棚部を示す斜視図である。FIG. 7 is a perspective view showing a shelf portion of a conventional vertical wafer boat. 図８は図７に示した棚部の断面図である。FIG. 8 is a cross-sectional view of the shelf shown in FIG.

符号の説明Explanation of symbols

２ 支柱
１０ 棚部
１１ 延設部
１１ａ 凹曲面（延設部上面）
１２ ウエハ載置部
１２ａ 凸曲面（ウエハ載置部上面）
２０ 棚部
２１ 延設部
２１ａ 凹曲面（延設部上面）
２２ ウエハ載置部
２２ａ 凸曲面（ウエハ載置部上面）
３０ 棚部
３１ 延設部
３１ａ 凹曲面（延設部上面）
３２ ウエハ載置部
３２ａ 凸曲面（ウエハ載置部上面）
Ｒ１，Ｒ２ 凹曲面（延設部上面）の半径
Ｒ３ 凸曲面（ウエハ載置部上面）の半径
Ｒ４ ウエハ載置部の平面視上の半径
Ｗ ウエハ 2 Prop 10 Shelf part 11 Extension part 11a Concave curved surface (extension part upper surface)
12 Wafer mounting part 12a Convex curved surface (wafer mounting part upper surface)
20 shelf part 21 extension part 21a concave curved surface (extension part upper surface)
22 Wafer mounting part 22a Convex curved surface (wafer mounting part upper surface)
30 shelf part 31 extension part 31a concave curved surface (extension part upper surface)
32 Wafer mounting part 32a Convex curved surface (wafer mounting part upper surface)
R1, R2 Convex curved surface (upper portion upper surface) radius R3 Convex curved surface (wafer mounting portion upper surface) radius R4 Wafer mounting portion radius W in plan view Wafer

Claims (4)

成膜処理されるウエハを搭載するための棚部が形成された複数本の支柱と、前記支柱の上下端部を固定する天板及び底板とを備え、
前記棚部は、前記支柱の側面から延設された延設部と、この延設部の先端部に形成されたウエハ載置部とを有し、かつ前記延設部の上面が凹曲面に形成されていることを特徴とする縦型ウエハボート。 A plurality of support columns on which shelves for mounting wafers to be deposited are formed, and a top plate and a bottom plate for fixing the upper and lower ends of the support columns,
The shelf includes an extending portion extending from a side surface of the support column and a wafer placement portion formed at a tip portion of the extending portion, and the upper surface of the extending portion has a concave curved surface. A vertical wafer boat characterized by being formed. 前記延設部の上面に形成される凹曲面が、半径３〜２０ｍｍの円弧状曲面であることを特徴とする請求項１記載の縦型ウエハボート。   2. The vertical wafer boat according to claim 1, wherein the concave curved surface formed on the upper surface of the extending portion is an arc-shaped curved surface having a radius of 3 to 20 mm. 前記ウエハ載置部の上面が凸曲面に形成され、前記延設部上面の凹曲面と滑らかに接続され、ウエハが前記ウエハ載置部に線接触状態で載置されることを特徴とする請求項１または請求項２に記載の縦型ウエハボート。   The upper surface of the wafer mounting portion is formed in a convex curved surface, is smoothly connected to the concave curved surface of the upper surface of the extending portion, and the wafer is mounted on the wafer mounting portion in a line contact state. The vertical wafer boat according to claim 1 or 2. 前記ウエハ載置部が、平面視上、ウエハの半径よりも大きな半径を有する円弧状に形成し、ウエハが前記ウエハ載置部に対して曲線の線接触状態で載置されることを特徴とする請求項３記載の縦型ウエハボート。   The wafer mounting portion is formed in an arc shape having a radius larger than the radius of the wafer in plan view, and the wafer is mounted in a curved line contact state with respect to the wafer mounting portion. The vertical wafer boat according to claim 3.
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JP2018011011A (en) * 2016-07-15 2018-01-18 クアーズテック株式会社 Vertical wafer boat

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JPH0936209A (en) * 1995-07-14 1997-02-07 Nippon Steel Corp Film formation device and substrate supporting jig for use in this device
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Publication number Priority date Publication date Assignee Title
JP2018011011A (en) * 2016-07-15 2018-01-18 クアーズテック株式会社 Vertical wafer boat
KR20180008292A (en) * 2016-07-15 2018-01-24 쿠어스택 가부시키가이샤 Vertical wafer boat
KR101978560B1 (en) 2016-07-15 2019-05-14 쿠어스택 가부시키가이샤 Vertical wafer boat

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