JP2008243610A - Airtight container, manufacturing method equipped with it, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an airtight container wherein sealing can be easily and surely performed in a vacuum atmosphere or a stable gas atmosphere, an image display device equipped with it, and the manufacturing method of the airtight container. <P>SOLUTION: This airtight container is equipped with a first member, a second member disposed face to face with the first member, and a sealing part 33 provided between the first member and the second member while mutually sealing these first member and second members. The sealing part has an under layer 31 formed by a metal thin film deposited on at least either one of the first and second members, a diffusion layer 35 formed by diffusing a part of the metal components of the metal thin film to one member, and a sealing material layer 32 provided on the under layer. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an airtight container whose inside is hermetically shielded, an image display device including the airtight container, and a method for manufacturing the airtight container.

  In recent years, as a lightweight and thin image display device, a liquid crystal display (hereinafter referred to as LCD) that controls the intensity of light using the orientation of liquid crystal, a plasma display panel (hereinafter referred to as LCD) that emits phosphors by ultraviolet rays of plasma discharge. (Referred to as PDP), field emission display (hereinafter referred to as FED) that emits a phosphor with an electron beam of a field emission electron emitter, and surface conduction electron that emits a phosphor with an electron beam of a surface conduction electron emitter. Emission displays (hereinafter referred to as SEDs) have been developed.

  For example, an FED generally has a front substrate and a rear substrate that are arranged to face each other with a predetermined gap, and these substrates are hermetically sealed by bonding their peripheral parts to each other via a rectangular frame-shaped side wall. This constitutes a vacuum envelope shielded by. A phosphor screen is formed on the inner surface of the front substrate, and a number of electron-emitting devices are provided on the inner surface of the rear substrate as electron emission sources that excite the phosphor to emit light.

  In order to support an atmospheric pressure load applied to the back substrate and the front substrate, a plurality of support members are disposed between these substrates. The potential on the back substrate side is substantially the ground potential, and an anode voltage of, for example, 10 kV is applied to the phosphor screen. An image is displayed by irradiating red, green, and blue phosphors constituting the phosphor screen with an electron beam emitted from the electron-emitting device and causing the phosphor to emit light.

  In such an FED, the size of the electron-emitting device is on the order of micrometers, and the distance between the front substrate and the rear substrate can be on the order of millimeters. For this reason, higher resolution, lighter weight, and thinner thickness can be achieved as compared with a cathode ray tube (CRT) used as a display of a current television or computer.

  In such an FED, it is important to maintain a high degree of vacuum inside the vacuum envelope. This is because if the degree of vacuum is low, stable electron emission cannot be performed, and the life of the image display device is reduced.

As a method of raising the degree of vacuum inside the vacuum envelope, the back substrate, side walls, and front substrate are placed in a vacuum processing apparatus, and baking, electron beam irradiation is performed in a vacuum atmosphere to generate surface adsorption gas. There has been proposed a manufacturing method and a manufacturing apparatus in which a getter film is formed after discharge and a side wall, a rear substrate, and a front substrate are sealed using a frit glass or the like in a vacuum atmosphere (for example, Patent Document 1). ). According to this method, the surface adsorbed gas can be sufficiently released by electron beam cleaning, and the getter film is not oxidized and a sufficient gas adsorbing effect can be obtained. Further, since the exhaust pipe is unnecessary, the space of the image display device is not wasted.
JP-A-2005-332618

  However, when sealing is performed using frit glass in a vacuum, it is necessary to heat the frit glass to a high temperature of 400 ° C. or higher. At that time, a large number of bubbles are generated from the frit glass, and the hermeticity and sealing strength of the sealing part in the vacuum envelope are deteriorated, and there is a problem that the reliability of maintaining the hermeticity is lowered. In addition, due to the characteristics of the electron-emitting device, it may be better to avoid a high temperature of 400 ° C. or higher. In such a case, a method of sealing using frit glass is not preferable.

  In order to solve this problem, indium and Sn, which are low melting point metals, and alloys thereof are used as a sealing material instead of frit glass. When a low melting point metal is used as a sealing material, a metal vapor-deposited film, a metal paste, or the like is used as a base layer of the sealing material in order to give the substrate wettability and high airtightness. However, the bondability between the glass and the metal is not sufficient, and the problem that the sealing material melts and aggregates during vacuum heating occasionally occurs.

  The present invention has been made in view of the above points, and its object is to provide an airtight container that can be easily and reliably sealed in a vacuum atmosphere or a stable gas atmosphere, an image display device including the same, and The object is to provide a method for manufacturing an airtight container.

  An airtight container according to an aspect of the present invention is provided between a first member, a second member disposed opposite to the first member, and the first member and the second member, and the first and second members. A sealing portion that seals each other, and the sealing portion includes an underlayer formed of a metal thin film deposited on at least one of the first and second members, and a metal component of the metal thin film. It has a diffusion layer, a part of which is diffused in the one member, and a sealing material layer provided on the base layer.

An airtight container manufacturing method according to another aspect of the present invention is provided between a first member, a second member disposed opposite to the first member, and the first member and the second member. A sealing part that seals the first member and the second member together, and a manufacturing method of an airtight container,
A metal thin film is deposited and formed on at least one of the first member and the second member to form a base layer, and a voltage is applied to the junction between the at least one member and the base layer and the periphery thereof to form the base film. In a state where a part of the metal component is diffused into the one member to form a diffusion layer, a sealing material layer is formed on the base layer, and the sealing material layer is heated to be melted or softened. In the method of manufacturing an airtight container, the first member and the second member are disposed to face each other with the sealing material layer interposed therebetween, and the first member and the second member are sealed with the sealing material.

  According to the above configuration, the bonding strength between the base layer and the member on which the base layer is formed can be increased, and the sealing can be easily and surely performed in a vacuum atmosphere or a stable gas atmosphere. An airtight container having high strength, an image display device including the airtight container, and a method for manufacturing the airtight container can be provided.

Hereinafter, embodiments in which the present invention is applied to an FED as an image display device will be described in detail with reference to the drawings.
As shown in FIGS. 1 and 2, the FED includes a front substrate 11 and a rear substrate 12 each made of rectangular glass, and these substrates are arranged to face each other with a predetermined gap. The front substrate 11 and the back substrate 12 constitute a flat rectangular vacuum envelope 10 whose peripheral portions are bonded to each other via a rectangular frame-shaped side wall 18 and the inside is maintained in a vacuum state. The vacuum envelope 10 constitutes an airtight container. For example, the front substrate 11 constitutes a first member, and the side wall 18 constitutes a second member. The side wall 18 is sealed to the peripheral portion of the back substrate 12 by a low melting point glass 30 such as frit glass, for example, and is sealed to the peripheral portion of the front substrate 11 by a sealing portion 33 described later. They are joined together in an airtight manner.

  A plurality of plate-like support members 14 are provided inside the vacuum envelope 10 in order to support an atmospheric pressure load applied to the front substrate 11 and the rear substrate 12. These support members 14 extend in a direction parallel to one side of the envelope 10, for example, the long side, and are arranged at a predetermined interval along a direction orthogonal to the one side. . Both ends in the longitudinal direction of each support member 14 are opposed to the side wall 18 with a gap. Each support member 14 is attached to the back substrate 12, for example. The shape of the support member 14 is not particularly limited to this, and a columnar support member may be used.

  As shown in FIGS. 2 and 3, a phosphor screen 16 that functions as a display surface is formed on the inner surface of the front substrate 11. The phosphor screen 16 is configured by arranging red, green, and blue phosphor layers R, G, and B, and a black light shielding layer 20 positioned between these phosphor layers. The phosphor layers R, G, and B of three colors of red, green, and blue are formed alternately with a gap in the first direction, and the phosphor layers of the same color are in the second direction orthogonal to the first direction. Are arranged with a gap in between. Each of the phosphor layers R, G, and B constitutes a subpixel with single colors of red, green, and blue, and constitutes one pixel by combining the subpixels of three colors.

  A metal back layer 17 made of an aluminum film or the like is formed on the phosphor screen 16. According to the present embodiment, the metal back layer 17 has a plurality of divided regions that are divided in the vertical direction and the horizontal direction and are electrically separated from each other. The electrically separated metal back layer 17 is provided so as to overlap the phosphor layers R, G, and B, respectively. A getter film 13 is formed on the metal back layer 17.

  As shown in FIG. 2, a large number of electron-emitting devices that emit electron beams are provided on the inner surface of the back substrate 12 as electron sources that excite the phosphor layers R, G, and B of the phosphor screen 16. ing. That is, a conductive cathode layer 24 is formed on the inner surface of the back substrate 12, and a silicon dioxide film 26 having a large number of cavities 25 is formed on the conductive cathode layer. On the silicon dioxide film 26, a gate electrode 28 made of molybdenum, niobium or the like is formed. A cone-shaped electron-emitting device 22 made of molybdenum or the like is provided in each cavity 25 on the inner surface of the back substrate 12. These electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to the pixels.

  The conductive cathode layer 24 and the gate electrode 28 are formed in stripes in directions orthogonal to each other, and a large number of wirings 23 (on the periphery of the back substrate 12 for supplying potentials to the conductive cathode layer and the gate electrode ( 1) is formed.

  In the FED configured as described above, a video signal is input to the electron-emitting device 22 and the gate electrode 28 formed in a simple matrix system. When the electron-emitting device 22 is used as a reference, a gate voltage of +100 V is applied when the luminance is highest. Further, +10 kV is applied to the phosphor screen 16. The magnitude of the electron beam emitted from the electron-emitting device 22 is modulated by the voltage of the gate electrode 28, and this electron beam excites the phosphor layer of the phosphor screen 16 to emit light, thereby displaying an image. .

  Thus, since a high voltage is applied to the phosphor screen 16, a high strain point glass is used as the plate glass for the front substrate 11, the back substrate 12, the side wall 18, and the support member 14. As shown in FIG. 2, the space between the back substrate 12 and the side wall 18 is sealed with a low melting point glass 30, and the space between the front substrate 11 and the side wall 18 is an underlayer formed on the sealing surface. 31 and a sealing material layer formed on the underlayer, for example, an indium layer 32 are sealed by a sealing portion 33.

  As schematically shown in FIG. 4, the foundation layer 31 is formed on each of the sealing surface of the front substrate 11 and the sealing surface of the side wall 18. The underlayer 31 is formed of a metal thin film having a film thickness of about 5 to 50 μm deposited on the sealing surface, for example, an aluminum metal thin film. Further, the metal thin film is anodically bonded to the front substrate 11 and the side wall 18 by voltage application described later. Further, a part of the aluminum component of the metal thin film is diffused on the sealing surface of the front substrate 11 and the sealing surface of the side wall 18, and a diffusion layer 35 continuous with the metal thin film is formed. Each diffusion layer 35 is formed to a thickness of about 3 to 10 μm.

Next, the manufacturing method of FED which has a vacuum envelope which functions as an airtight container comprised as mentioned above is demonstrated in detail.
First, the phosphor screen 16 is formed on the plate glass to be the front substrate 11. In this method, a plate glass having the same size as the front substrate 11 is prepared, and a phosphor layer stripe pattern is formed on the plate glass by a plotter machine. The plate glass on which the phosphor stripe pattern is formed and the plate glass for the front substrate are placed on a positioning jig and set on an exposure table, whereby the phosphor screen 16 is generated by exposure and development.

  Subsequently, the electron-emitting device 22 is formed on the glass plate for the rear substrate. In this case, a matrix-like conductive cathode layer is formed on the plate glass, and an insulating film of a silicon dioxide film is formed on the conductive cathode layer by, for example, a thermal oxidation method, a CVD method, or a sputtering method.

  Thereafter, a metal film for forming a gate electrode such as molybdenum or niobium is formed on the insulating film by, for example, sputtering or electron beam evaporation. Next, a resist pattern having a shape corresponding to the gate electrode to be formed is formed on the metal film by lithography. Using this resist pattern as a mask, the metal film is etched by wet etching or dry etching to form the gate electrode 28.

  Next, the cavity 25 is formed by etching the insulating film by wet etching or dry etching using the resist pattern and the gate electrode as a mask. Then, after removing the resist pattern, a peeling layer made of, for example, aluminum or nickel is formed on the gate electrode 28 by performing electron beam evaporation from a direction inclined at a predetermined angle with respect to the back substrate surface. Thereafter, for example, molybdenum is deposited as a material for forming the cathode from the direction perpendicular to the surface of the back substrate by an electron beam deposition method. As a result, the electron-emitting device 22 is formed inside each cavity 25. Subsequently, the release layer is removed together with the metal film formed thereon by a lift-off method.

  Subsequently, the gap between the peripheral edge of the back substrate 12 on which the electron-emitting device 22 is formed and the rectangular frame-shaped side wall 18 is sealed with a low-melting glass 30 in the atmosphere. At the same time, the plurality of support members 14 are sealed with the low melting point glass 30 on the back substrate 12 in the atmosphere.

  Thereafter, the back substrate 12 and the front substrate 11 are sealed to each other through the side wall 18. In this case, first, the base layer 31 is formed with a predetermined width over the entire circumference on the upper surface of the side wall 18 serving as a sealing surface and the inner peripheral edge of the front substrate 11. In the present embodiment, the base layer 31 is formed by depositing an aluminum film. Thereafter, a voltage application process is performed between the aluminum film and the front substrate 11 and between the aluminum film and the side wall 18. By this treatment, the aluminum component of the foundation layer 31 is mixed into the glass substrate 11 and the side wall 18 so that a diffusion layer continuous with the metal thin film is formed on the sealing surface side of the substrate 11 and the side wall 18. As a result, the base layer 31 is bonded to the substrate 11 at the anodic interface, and the adhesion between the aluminum film, the glass substrate, and the side wall can be dramatically improved.

  As shown in FIG. 5, the voltage application process is performed by placing the front substrate 11 on an aluminum plate 40 and using a DC power source (1 kV, 30 mA) 41 to form a base layer 31 (aluminum film), the aluminum plate 40, A voltage is applied during At this time, the base layer 31 side is a positive electrode, and a voltage of 1 kV is applied. Moreover, the temperature of the sealing part of the front substrate 11 was maintained at 400 ° C., and the voltage application time was 10 minutes. In addition, the glass substrate which comprises the front substrate 11 contains the sodium ion which is a movable ion. The voltage application place may be only at the interface between the base layer 31 and the front substrate 11 and its periphery. The shape of the aluminum plate 40 may be a rectangular frame shape along the sealing portion 33. A voltage application process is performed on the underlying layer 31 formed on the sidewall 18 by the same method as described above.

  The above-described underlayer 31 is made of a material having good wettability and airtightness with respect to the metal sealing material, that is, a material having high affinity for the metal sealing material. In addition to the aluminum film formed by the above-described vapor deposition method, a film made of a single substance of Ag, Ni, Co, Cr, Au, Cu or an alloy thereof can be used. The film forming method is not limited to the vapor deposition method, and may be a sputtering method, an ion plating method, or a plating method.

  Moreover, although high strain point glass was used for the substrate glass, the mixing rate of the base layer metal into the glass increases as the amount of sodium ions that are mobile ions increases. Therefore, for example, when the substrate is made of soda lime glass, the temperature during voltage application can be as low as 220 ° C. From this, the substrate temperature at the time of voltage application can be processed in the range of 100 to 450 ° C. Further, the mobile ions are not limited to sodium, but may be other alkali ions.

  Subsequently, an indium layer 32 as a metal sealing material layer is disposed on each base layer 31. Indium is preferably in the form of a sheet, for example, having a width narrower than the width of the underlayer. The shape of indium is not limited to a sheet shape, but may be a round wire shape or a small lump shape. As the metal sealing material, it is desirable to use a low melting point metal material having a melting point of about 350 ° C. or less and excellent adhesion and bondability. Indium (In) used in this embodiment has not only a low melting point of 156.7 ° C., but also has excellent characteristics such as low vapor pressure, soft and strong against impact, and does not become brittle even at low temperatures. Moreover, since it can be directly bonded to glass depending on conditions, it is a material suitable for the purpose of the present invention.

  The sealing material layer may be formed by simply placing a sheet-like or wire-like sealing material on the underlayer, or filling softening indium on the underlayer 31.

  As the low melting point metal material, an alloy in which elements such as silver oxide, silver, gold, copper, aluminum, zinc, tin and Bi are added alone or in combination can be used instead of indium alone. For example, in an In97% -Ag3% eutectic alloy, the melting point is further lowered to 143 ° C., and the mechanical strength can be increased.

  In the above description, the expression “melting point” is used, but in the case of an alloy composed of two or more metals, the melting point may not be determined as a single unit. Generally in such cases, the liquidus temperature and the solidus temperature are defined. The former is a temperature at which a part of the alloy starts to solidify when the temperature is lowered from the liquid state, and the latter is a temperature at which all of the alloy is solidified. In this embodiment, for convenience of explanation, the expression melting point is used even in such a case, and the solidus temperature is called the melting point.

  Next, the front substrate 11 in which the base layer 31 and the indium layer 32 are formed on the sealing surface, and the side wall 18 is sealed to the back substrate 12, and the base layer 31 and the indium layer 32 are formed on the upper surface of the side wall. As shown in FIG. 6, the rear substrate side assembly is held by a jig or the like with the sealing surfaces facing each other and facing each other at a predetermined distance, and is put into a vacuum processing apparatus. Is done.

  As shown in FIG. 7, this vacuum processing apparatus 100 includes a load chamber 101, baking, electron beam cleaning 102, cooling chamber 103, getter film deposition chamber 104, assembly chamber 105, and cooling chamber 106 arranged side by side. And an unload chamber 107, a drive device 120 for adjusting the temperature and vacuum degree of each chamber, and a control unit 121 for controlling the operation of the entire device. Each chamber of the vacuum processing apparatus 100 is configured as a processing chamber capable of vacuum processing, and all the chambers are evacuated when the FED is manufactured. These processing chambers are connected by a gate valve or the like (not shown).

The rear substrate side assembly and the front substrate 11 that face each other at a predetermined interval are put into the load chamber 101, and after the inside of the load chamber 101 is evacuated, it is sent to baking and electron beam cleaning 102. In the baking and electron beam cleaning 102, when the high vacuum degree of about 10 ⁻⁵ Pa is reached, the back substrate side assembly and the front substrate are baked by heating to a temperature of about 300 ° C. Fully release the gas.

  At this temperature, the indium layer (melting point: about 156 ° C.) 32 is melted. However, since the indium layer 32 is formed on the base layer 31 having a high affinity, the indium is held on the base layer 31 without flowing, and the indium layer 32 is held on the electron-emitting device 22 side, the outside of the back substrate, or the phosphor screen. Outflow to the 16 side is prevented.

  In the baking and electron beam cleaning 102, simultaneously with heating, an electron beam is irradiated onto the phosphor screen surface of the front substrate 11 and the electron emitting element surface of the rear substrate 12 from an electron beam generator (not shown). Since this electron beam is deflected and scanned by a deflection device mounted outside the electron beam generator, the entire surface of the phosphor screen and the surface of the electron-emitting device can be cleaned with an electron beam.

  After heating and electron beam cleaning, the rear substrate side assembly and the front substrate 11 are sent to the cooling chamber 103 and cooled to a temperature of about 100 ° C., for example. Subsequently, the back substrate side assembly and the front substrate 11 are sent to the getter film deposition chamber 104, where a Ba film is deposited on the outside of the phosphor screen as a getter film. The Ba film is prevented from being contaminated with oxygen, carbon, or the like, and can maintain an active state.

  Next, the back substrate side assembly and the front substrate 11 are sent to the assembly chamber 105 where they are heated to 200 ° C. and the indium layer 32 is melted or softened again in a liquid state. In this state, the front substrate 11 and the side wall 18 are joined and pressurized with a predetermined pressure, and then indium is removed and solidified. Thereby, the front substrate 11 and the side wall 18 are sealed by the sealing layer obtained by fusing the indium layer 32 and the base layer 31, and the vacuum envelope 10 is formed.

  The vacuum envelope 10 formed in this way is cooled to room temperature in the cooling chamber 106 and then taken out from the unload chamber 107. The FED is completed through the above steps.

  According to the FED configured as described above and the manufacturing method thereof, the front substrate 11 and the rear substrate 12 are sealed in a vacuum atmosphere, so that the surface adsorption gas of the substrate can be reduced by the combined use of baking and electron beam cleaning. The gas can be sufficiently released, and the getter film is not oxidized, and a sufficient gas adsorption effect can be obtained. Thereby, FED which can maintain a high degree of vacuum can be obtained.

  Further, by using indium as the sealing material, foaming at the time of sealing can be suppressed, and an FED having high airtightness and high sealing strength can be obtained. At the same time, by providing the base layer 31 under the indium layer 32, inflow of indium can be prevented and held in place even when indium is melted in the sealing step.

The present inventor compared the sealing materials such as indium wettability, the sealing material layer thickness, the presence or absence of substrate contamination resistance, and the ease of forming the substrate layers for various underlayers. The results are shown in Table 1 below.

  Soda lime glass and metal were used as the material for the substrate on which the underlayer was formed. The underlayer is formed of a metal thin film as in this embodiment, and is formed by applying a voltage application process, that is, an anode interface bonded base layer, a metal thin film not subjected to the voltage application process, or a silver paste. The undercoat layer and the non-undercoat layer were compared.

  It can be seen that the metal thin film subjected to the voltage application treatment according to the present embodiment does not peel off even when rubbed with paper or the like, and has a strong bonding force with the glass substrate. The wettability of the metal thin film with respect to indium is greatly improved as compared with the metal thin film not subjected to the anodic interface bonding treatment. The longer the anode interface bonding treatment time, the better the wettability of indium.

  Moreover, the indium thickness was made thin and the wettability could be ensured by using the deposited film subjected to the anodic interface bonding treatment as a base layer. By reducing the indium layer thickness, the molten indium did not flow at the time of sealing, indicating the possibility of stable sealing. Furthermore, when a metal vapor deposition film is used, it turns out that the long formation process of printing / high temperature baking is not required like a silver paste, and an underlayer can be formed in a short time.

  From the above, the bonding strength between the base layer and the member on which the base layer is formed is increased, and a sealed portion having high airtightness and sealing strength is obtained. Therefore, an airtight container that can be easily and reliably sealed in a vacuum atmosphere or a stable gas atmosphere and has high airtightness and sealing strength, an image display device including the same, and a method for manufacturing the airtight container are provided. be able to. Furthermore, handling of indium becomes simple, and even a large image display device of 50 inches or more can be easily and reliably sealed.

  In the above-described embodiment, the sealing is performed in a state where the base layer 31 and the indium layer 32 are formed on both the sealing surface of the front substrate 11 and the sealing surface of the side wall 18. For example, as illustrated in FIG. 8, the sealing may be performed in a state where the base layer 31 and the indium layer 32 are formed only on the sealing surface of the front substrate 11 as illustrated in FIG. 8. The voltage application process may be performed only on one of the sealing surfaces.

  The present invention is not limited to the above-described embodiment, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. In addition, various inventions can be formed by appropriately combining a plurality of components disclosed in the embodiment. Some constituent elements may be deleted from all the constituent elements shown in the embodiments, or constituent elements over different embodiments may be appropriately combined.

  For example, the back substrate and the side wall may be sealed with a sealing layer in which the base layer 31 and the indium layer 32 similar to those described above are fused. Moreover, it is good also as a structure which bends and forms one peripheral part of a front substrate or a back substrate, and joins these board | substrates directly, without passing through a side wall. Furthermore, the indium layer is configured to have a width smaller than the width of the underlayer over the entire circumference, but if the indium layer is formed in a width smaller than the width of the underlayer in at least a part of the underlayer, It becomes possible to prevent the flow of indium.

In the above-described embodiment, the sealing portion is sealed in a vacuum atmosphere. However, the present invention is not limited to this and may be performed in a stable gas atmosphere. For the sealing of the front substrate and the rear substrate, a batch-type atmospheric firing furnace may be used in addition to the in-line type vacuum processing apparatus.
The present invention is not limited to the above-described FED or the like, but can be applied to other display devices such as SED, PDP, and fluorescent display tube, or airtight containers of other electronic devices such as semiconductor sensors.

FIG. 1 is a perspective view showing a partially broken FED according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the FED along line AA in FIG. FIG. 3 is a plan view showing the phosphor screen of the FED. FIG. 4 is an enlarged cross-sectional view showing a sealing portion of the FED. FIG. 5 is a perspective view showing a state in which a base layer and an indium layer are formed on a sealing surface of a side wall and a sealing surface of a front substrate constituting the vacuum envelope of the FED. FIG. 6 is a cross-sectional view showing a state where a rear substrate side assembly in which a base layer and an indium layer are formed on the sealing portion and a front substrate are arranged to face each other. FIG. 7 is a diagram schematically showing a vacuum processing apparatus used for manufacturing the FED. FIG. 8 is a cross-sectional view showing a state in which an underlayer and an indium layer are formed on the sealing surface of the front substrate in the step of forming the FED vacuum envelope according to another embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Vacuum envelope, 11 ... Front substrate, 12 ... Back substrate, 14 ... Support member,
16 ... phosphor screen, 18 ... side wall, 22 ... electron-emitting device, 30 ... low melting glass,
31 ... Underlayer, 32 ... Indium layer, 33 ... Sealing part, 35 ... Diffusion layer,
100 ... Vacuum processing apparatus

Claims (16)

A first member, a second member disposed opposite to the first member, a sealing portion provided between the first member and the second member, and sealing the first and second members to each other; With
The sealing portion is formed by diffusing a base layer formed of a metal thin film deposited on at least one of the first and second members and a part of the metal component of the metal thin film to the one member. An airtight container having a diffusion layer and a sealing material layer provided on the base layer.   The hermetic container according to claim 1, wherein the metal thin film and the at least one member are bonded to an anode interface.   The airtight container according to claim 1 or 2, wherein the first member and the second member are made of glass and contain at least an alkali metal.   The hermetic container according to claim 1 or 2, wherein the underlayer is formed of a pure metal of Ni, Ag, Al, Co, Cr, Au, or Cu, or an alloy containing any one thereof.   The hermetic container according to claim 1, wherein the metal thin film is any one of a deposited film, a CVD film, a sputtered film, a film formed by an ion plating method, and a plated film.   The hermetic container according to claim 1, wherein the sealing material layer is formed of a low melting point metal.   The hermetic container according to claim 6, wherein the low melting point metal is a pure metal of Sn, In, Bi, or an alloy containing at least one of them.   The sealing portion includes the base layer formed on the first member, the base layer formed on the second member, and the sealing material layer sandwiched between the base layers. The airtight container according to any one of claims 1 to 7. A vacuum envelope having a first substrate, a second substrate opposed to the first substrate with a gap, and a sealing portion joining the peripheral portions of the first substrate and the second substrate;
A display surface disposed on the first substrate;
A plurality of electron sources provided on the second substrate and exciting the display surface,
The sealing portion is formed by diffusing a base layer formed of a metal thin film deposited on at least one of the first substrate and the second substrate and a part of the metal component of the metal thin film to the one substrate. An image display device comprising the diffusion layer formed and a sealing material layer provided on the base layer. A first member, a second member disposed opposite to the first member, a sealing portion provided between the first member and the second member, and sealing the first and second members to each other; A method for manufacturing an airtight container comprising:
A metal thin film is deposited on at least one of the first member and the second member to form a base layer;
A voltage is applied to the junction between the at least one member and the base layer and the periphery thereof to diffuse a part of the metal component of the metal thin film to the one member to form a diffusion layer,
Forming a sealing material layer on the underlayer;
In a state where the sealing material layer is heated and melted or softened, the first member and the second member are disposed to face each other with the sealing material layer interposed therebetween, and the first member and the second member are disposed by the sealing material. A method for manufacturing an airtight container for sealing a member.   The manufacturing method of the airtight container of Claim 10 which performs the said voltage application in the state which heated at least one member in which the said base layer was formed in the range of 100-450 degreeC.   The manufacturing method of the airtight container of Claim 10 which forms the said base layer with the pure metal of Ni, Ag, Al, Co, Cr, Au, Cu, or the alloy containing any one of them.   The method of manufacturing an airtight container according to claim 10, wherein the metal thin film is formed by any one of vapor deposition, CVD, sputtering, ion plating, and plating.   The said sealing material layer is a manufacturing method of the airtight container of Claim 10 currently formed with the low melting metal.   The method of manufacturing an airtight container according to claim 14, wherein the low melting point metal is a pure metal of Sn, In, Bi, or an alloy containing at least one of them.   The manufacturing method of the airtight container of Claim 10 which heats the said sealing material layer in a vacuum atmosphere or a stable gas atmosphere, and seals a 1st member and a 2nd member.

Images