JP2008227032A - Heater plate and package heating apparatus - Google Patents

Heater plate and package heating apparatus Download PDF

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JP2008227032A
JP2008227032A JP2007061253A JP2007061253A JP2008227032A JP 2008227032 A JP2008227032 A JP 2008227032A JP 2007061253 A JP2007061253 A JP 2007061253A JP 2007061253 A JP2007061253 A JP 2007061253A JP 2008227032 A JP2008227032 A JP 2008227032A
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package
bonding
stage
heater plate
stopped
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Joji Nishida
丈嗣 西田
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Fujifilm Corp
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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    • H01L2924/181—Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heater plate and a package heating apparatus for improving a yield at a low cost without deteriorating the productive efficiency of a semiconductor and the adhesion of the wire bonding. <P>SOLUTION: The heater plate 1 and a heater 13 are mounted to an elevating mechanism 10, and are raised by a fixed stroke toward the bottom face of the package 12 each time the carrier 8 stops at a predetermined position. At that time, an island stage 5 pushes the bottom face of the package 12 stopped at the bonding preparing position located directly under the bonding treatment position up to the bonding treatment position while supporting it by the top face thereof. At the same time, as first and second pre-heat stages 3 and 4 are lower than the island stage 5, they mildly heat the package 12 respectively in the state wherein clearances are formed between the bottom face of the package 12 stopped on the upstream side of the bonding preparing position and their top faces respectively, so that no crack is produced in the package 12. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体のワイヤボンディング工程に用いるヒータプレート及びパッケージ加熱装置に関する。   The present invention relates to a heater plate and a package heating device used in a semiconductor wire bonding process.

ＬＳＩやＣＣＤモジュールなどの半導体の製造工程では、半導体素子（ＩＣチップ）を銀ペースト樹脂などのダイボンドペーストを用いてパッケージの搭載部位に固着した後、半導体素子のボンディングパッドとパッケージに設けられた内部リードとを金属細線で電気的に接続する、いわゆるワイヤボンディングが行われる。ここで、金属細線としては主に直径３０μｍ程度の金線が用いられ、また、半導体素子のボンディングパッドはアルミ合金であることが多い。一方、内部リードは表面が金や銀などでめっきされている。ワイヤボンディング装置では、ボンディングパッド及び内部リードと金線を高い密着力でそれぞれ接続するために、通常、熱と超音波を印加してボンディングを行う。   In a manufacturing process of a semiconductor such as an LSI or a CCD module, a semiconductor element (IC chip) is fixed to a package mounting portion using a die bond paste such as a silver paste resin, and then a bonding pad of the semiconductor element and an internal portion provided in the package So-called wire bonding is performed in which the leads are electrically connected to each other with a fine metal wire. Here, a gold wire having a diameter of about 30 μm is mainly used as the thin metal wire, and the bonding pad of the semiconductor element is often an aluminum alloy. On the other hand, the surface of the internal lead is plated with gold or silver. In a wire bonding apparatus, in order to connect a bonding pad, an internal lead, and a gold wire with high adhesive strength, bonding is usually performed by applying heat and ultrasonic waves.

ワイヤボンディングを行う場合、半導体素子が搭載済みのパッケージを、図６のようなヒータプレートを使用してワイヤボンディングに必要な所定温度まで加熱する。ワイヤボンディングの密着性は、この温度に依存することが一般的に知られている。特許文献１では、熱と超音波を併用して行うワイヤボンディング方法において、パッケージを加熱するヒータプレートを、半導体素子の加熱に使用するアイランド部と、内部リードの加熱に使用する内部リード部とに分離しており、それぞれの特性に見合った適当な温度で加熱することにより、各々の密着性を向上する方法が提案されている。   When wire bonding is performed, a package on which a semiconductor element is mounted is heated to a predetermined temperature required for wire bonding using a heater plate as shown in FIG. It is generally known that the adhesion of wire bonding depends on this temperature. In Patent Document 1, in a wire bonding method that uses both heat and ultrasonic waves, a heater plate that heats a package is divided into an island portion that is used to heat a semiconductor element and an internal lead portion that is used to heat an internal lead. A method has been proposed in which the adhesion is improved by heating at an appropriate temperature suitable for each characteristic.

ヒータプレート２１はステンレス等の金属により形成されており、本体となる略平板状のヒータベース２２の上面に、同一の高さを有する第一及び第二プリヒートステージ２３、２４とアイランドステージ２５が一体に形成されている。ヒータプレート２１は、パッケージ加熱装置に備えられたヒータに取り付けられており、ヒータを所定温度まで上昇するように設定することで各ステージ２３，２４，２５を一様に加熱する。   The heater plate 21 is made of a metal such as stainless steel, and the first and second preheat stages 23 and 24 and the island stage 25 having the same height are integrally formed on the upper surface of a substantially flat heater base 22 serving as a main body. Is formed. The heater plate 21 is attached to a heater provided in the package heating device, and uniformly heats the stages 23, 24, and 25 by setting the heater to a predetermined temperature.

パッケージ加熱装置にはキャリアを用いた搬送機構が備えられ、１つのキャリアに搭載された複数個のパッケージがワイヤボンディング処理に要するタクトタイムの経過ごとに順次に水平な搬送経路にしたがって間欠搬送されており、下流側にあるボンディング処理位置に搬送されたパッケージは順次にワイヤボンディング装置によってワイヤボンディング処理が施される。タクトタイムは、ワイヤボンディングする金線の本数などに依存するが、ＣＣＤモジュールでは、例えば１５秒程度に設定することがある。   The package heating device is provided with a carrier transport mechanism, and a plurality of packages mounted on one carrier are intermittently transported sequentially along a horizontal transport path every time a tact time required for wire bonding processing elapses. The packages conveyed to the bonding processing position on the downstream side are sequentially subjected to wire bonding processing by a wire bonding apparatus. The tact time depends on the number of gold wires to be wire-bonded, but may be set to about 15 seconds in the CCD module, for example.

パッケージの加熱は、キャリアで保持されたパッケージをワイヤボンディング処理位置まで間欠的に搬送する過程で行われる。パッケージ加熱装置では、キャリアの停止中、その下方からヒータプレート２１が昇降機構により上昇し、各ステージ２３、２４、２５にパッケージをそれぞれ支持することで順々に加熱していく。第一プリヒートステージ２３と第二プリヒートステージ２４では、ワイヤボンディングを行うボンディング処理位置の上流側で停止しているパッケージを予備的に加熱する。また、アイランドステージ２５では、ボンディング処理位置でワイヤボンディング処理が施されているパッケージを加熱する。なお、アイランドステージ２５の表面には吸着孔２６が設けられており、吸気機構によって吸引力を発生させることでパッケージの位置を固定する。このため、パッケージの位置がずれることなく、確実にワイヤボンディングを行うことができる。   The package is heated in the process of intermittently transporting the package held by the carrier to the wire bonding processing position. In the package heating apparatus, while the carrier is stopped, the heater plate 21 is lifted from below by the lifting mechanism, and the package is supported on the stages 23, 24, and 25, respectively, and heated sequentially. In the first preheat stage 23 and the second preheat stage 24, the package stopped on the upstream side of the bonding processing position where wire bonding is performed is preliminarily heated. In the island stage 25, the package subjected to the wire bonding process is heated at the bonding process position. An adsorption hole 26 is provided on the surface of the island stage 25, and the position of the package is fixed by generating a suction force by an intake mechanism. For this reason, wire bonding can be reliably performed without shifting the position of the package.

このように第一及び第二プリヒートステージ２３、２４でワイヤボンディング処理に先立って予備的に加熱する理由は、アイランドステージ２５のみでパッケージを加熱する場合、ワイヤボンディングに必要な所定温度まで上昇させるのに多くの時間を要してしまい、生産効率が低下するためである。要求される生産効率を実現するためには、一定時間内にパッケージを所定温度にまで加熱する性能がパッケージ加熱装置には必要とされる。
特開平５−１２１４９５号公報 The reason why the first and second preheating stages 23 and 24 are preliminarily heated prior to the wire bonding process is that when the package is heated only by the island stage 25, the temperature is raised to a predetermined temperature necessary for wire bonding. This is because much time is required to reduce the production efficiency. In order to achieve the required production efficiency, the package heating apparatus is required to have the capability of heating the package to a predetermined temperature within a predetermined time.
JP-A-5-121495

しかしながら、従来のワイヤボンディング工程では、要求される密着性を満足する反面、パッケージにクラックが発生するという問題があった。例えば、図７のようなＣＥＲＤＩＰパッケージを１５秒程度で２００℃近くに加熱した場合、１％前後のパッケージにクラック３４が確認されている。ただし、半導体素子２８のボンディングパッド３０と内部リード３２は金線３１により必要な密着性をもってボンディングされている。   However, the conventional wire bonding process satisfies the required adhesion, but has a problem that cracks occur in the package. For example, when a CERDIP package as shown in FIG. 7 is heated to about 200 ° C. in about 15 seconds, a crack 34 is confirmed in a package of about 1%. However, the bonding pad 30 and the internal lead 32 of the semiconductor element 28 are bonded with a gold wire 31 with necessary adhesion.

このクラック３４は、調査により急激な加熱が原因であることが判明している。パッケージ１２は、土台となるセラミックベース３５の上に接着層である低融点ガラス層３６を介してセラミックフレーム２９を固着して形成しているため、加熱の過程において全体が一様に加熱されにくい構造を有している。このため、第一プリヒートステージ２３などと接触して直接加熱されるセラミックベース３５と、熱伝導によって間接的に加熱される低融点ガラス層３６及びセラミックフレーム２９の間では必然的に温度差が生じる。したがって、急激な温度上昇に伴いセラミックベース３５が膨張した結果、セラミックベース３５と低融点ガラス層３６の間には過大な応力が発生することがあり、結果としてクラック３４の発生に至っていた。このようなクラック３４の発生は、半導体２７の歩留まりを低下させる要因の１つとなっている。   This crack 34 has been found to be caused by rapid heating by investigation. Since the package 12 is formed by fixing the ceramic frame 29 on the ceramic base 35 serving as a base via a low melting point glass layer 36 as an adhesive layer, the package 12 is not easily heated uniformly in the heating process. It has a structure. Therefore, a temperature difference inevitably occurs between the ceramic base 35 that is directly heated in contact with the first preheat stage 23 and the like, and the low melting point glass layer 36 and the ceramic frame 29 that are indirectly heated by heat conduction. . Therefore, as a result of the ceramic base 35 expanding due to a rapid temperature rise, an excessive stress may be generated between the ceramic base 35 and the low melting point glass layer 36, resulting in the generation of cracks 34. The occurrence of such a crack 34 is one of the factors that reduce the yield of the semiconductor 27.

この問題を解決するには、セラミックベース３５の温度上昇を緩やかにすればよいが、単に加熱時間の短縮や温度設定の低下ではワイヤボンディングの密着性を低下させてしまうという別の問題が生じる。また、ヒータプレート２１は、ヒータに予め設定された温度を維持するのみであって、恒温槽のように温度上昇を自在に制御してパッケージ１２を加熱することはできない。例えば、特許文献１のようにヒータプレートをステージごとに分離して、別々のヒータにより段階的な加熱することで温度上昇を緩やかにすることも可能ではあるが、これらのヒータも耐久性に応じて交換が必要であることなどを考慮するとコスト負担が大きい。本発明は、上記課題を解決するためになされたもので、半導体の生産効率とワイヤボンディングの密着性を低下させることなく、低コストに歩留まりを向上するヒータプレート及びパッケージ加熱装置を提供するものである。   To solve this problem, the temperature rise of the ceramic base 35 may be moderated. However, simply shortening the heating time or lowering the temperature setting causes another problem that the adhesion of the wire bonding is lowered. Further, the heater plate 21 only maintains a preset temperature in the heater, and cannot heat the package 12 by freely controlling the temperature rise like a thermostatic bath. For example, as described in Patent Document 1, it is possible to separate the heater plate for each stage and to gradually increase the temperature by performing stepwise heating with separate heaters. Considering that replacement is necessary, the cost burden is large. The present invention has been made to solve the above-described problems, and provides a heater plate and a package heating apparatus that can improve yield at low cost without reducing semiconductor production efficiency and wire bonding adhesion. is there.

上記課題を解決するために、本発明は、チップ部品が組み込まれたパッケージを、ワイヤボンディング処理を行うために間欠搬送する搬送手段とともに用いられ、前記搬送手段によってボンディング準備位置に搬送されたパッケージの底面を支持して加熱するアイランドステージ及び前記ボンディング準備位置の上流側に搬送され停止しているパッケージの底面を加熱するプリヒートステージを共通のヒータベースに一体に形成したヒータプレートにおいて、前記ボンディング準備位置で停止しているパッケージの底面を前記アイランドステージの上面で支持したときに、上流側で停止しているパッケージの底面と前記プリヒートステージの上面との間に隙間が形成されるように、前記プリヒートステージの高さをアイランドステージよりも低くしている。   In order to solve the above-mentioned problems, the present invention uses a package in which a chip part is incorporated together with a conveying means for intermittently conveying a wire bonding process, and the package conveyed to the bonding preparation position by the conveying means. In the heater plate in which the island stage for supporting and heating the bottom surface and the preheat stage for heating the bottom surface of the package that is conveyed and stopped upstream of the bonding preparation position are integrally formed on a common heater base, the bonding preparation position When the bottom surface of the package stopped at the upper surface of the island stage is supported by the top surface of the island stage, a gap is formed between the bottom surface of the package stopped at the upstream side and the top surface of the preheat stage. Stage height is higher than island stage And comb.

また、前記ヒータプレートにおいて、前記プリヒートステージが複数個設けて、上流側ほど高さを低くしてもよいし、前記アイランドステージの上面に、パッケージの底面を吸着してワイヤボンディング処理中にパッケージを固定する吸着孔を形成してもよい。   Further, in the heater plate, a plurality of the preheat stages may be provided, and the height may be lowered toward the upstream side, or the package bottom surface may be adsorbed to the upper surface of the island stage and the package may be attached during the wire bonding process. You may form the adsorption | suction hole to fix.

さらに、パッケージ加熱装置に、チップ部品が組み込まれたパッケージを、ワイヤボンディング処理を行うために間欠搬送する搬送手段と、前記搬送手段によってボンディング準備位置に搬送されてきたパッケージの底面を支持して加熱するアイランドステージと、前記ボンディング準備位置の上流側で停止しているパッケージの底面を加熱するプリヒートステージとが共通のヒータベースに一体に形成され、前記ボンディング準備位置で停止しているパッケージの底面を前記アイランドステージの上面で支持したときに、上流側で停止しているパッケージの底面と前記プリヒートステージの上面との間に隙間が形成されるように、前記プリヒートステージの高さをアイランドステージよりも低くしたヒータプレートと、前記搬送手段によりパッケージの間欠搬送が行われた後に前記ヒータプレートを一定ストローク上昇させ、前記ボンディング準備位置で停止しているパッケージの底面を前記アイランドステージの上面で押し上げ、前記パッケージを前記ボンディング準備位置からボンディング処理位置に移動させるとともに、ワイヤボンディング処理が完了した後に前記ヒータプレートを降下させて前記パッケージを前記ボンディング処理位置からボンディング準備位置に戻す昇降手段とを備えるのもよい。   Further, the package heating device supports and heats the package in which the chip component is incorporated, the conveyance means for intermittently conveying the wire bonding process, and the bottom surface of the package that has been conveyed to the bonding preparation position by the conveyance means. An island stage and a preheat stage for heating the bottom surface of the package stopped upstream of the bonding preparation position are integrally formed on a common heater base, and the bottom surface of the package stopped at the bonding preparation position is formed. When supported on the upper surface of the island stage, the height of the preheat stage is set higher than that of the island stage so that a gap is formed between the bottom surface of the package stopped on the upstream side and the upper surface of the preheat stage. Due to the lowered heater plate and the conveying means After the intermittent conveyance of the package, the heater plate is raised by a certain stroke, the bottom surface of the package stopped at the bonding preparation position is pushed up by the upper surface of the island stage, and the package is moved from the bonding preparation position to the bonding processing position. And a lifting means for lowering the heater plate after the wire bonding process is completed and returning the package from the bonding process position to the bonding preparation position.

このようにプリヒートステージの高さをアイランドステージよりも低くしたヒータプレート及びパッケージ加熱装置により、ヒータプレートとパッケージを接触させることなく、パッケージの予備的な加熱を行うことができるため、温度上昇を従来よりも緩やかにしてクラックの発生を防止することができる。これによると、単一のヒータ及びヒータプレートを使用するためコスト面で有利であり、タクトタイムやヒータの温度設定の変更を伴わないために、半導体の生産効率とワイヤボンディングの密着性を低下させることもない。   Thus, the heater plate and the package heating device in which the height of the preheat stage is lower than that of the island stage can be used for preliminary heating of the package without bringing the heater plate and the package into contact with each other. It is possible to prevent cracks from occurring more gently. According to this, since a single heater and a heater plate are used, it is advantageous in terms of cost, and the tact time and the temperature setting of the heater are not changed, so that the production efficiency of the semiconductor and the adhesion of the wire bonding are lowered. There is nothing.

また、プリヒートステージが複数個設けて、上流側ほど高さを低くすることで、温度上昇をいっそう緩やかにすることが可能となる。さらに、アイランドステージの上面にパッケージを固定する吸着孔を形成することで、確実にワイヤボンディングを行うことができる。   Further, by providing a plurality of preheat stages and lowering the height toward the upstream side, the temperature rise can be further moderated. Furthermore, by forming the suction hole for fixing the package on the upper surface of the island stage, wire bonding can be reliably performed.

本発明のヒータプレート１は、図１のように、本体となる共通のヒータベース２に一体に形成した第一及び第二プリヒートステージ３、４の高さを、アイランドステージ５よりも低くしてある点を除けば、前述した従来のヒータプレート２１と変わりはない。なお、アイランドステージ５の高さは従来のヒータプレート２１のアイランドステージ２５と同一である。   As shown in FIG. 1, the heater plate 1 of the present invention is configured so that the heights of the first and second preheat stages 3 and 4 formed integrally with a common heater base 2 as a main body are lower than those of the island stage 5. Except for a certain point, it is the same as the conventional heater plate 21 described above. The height of the island stage 5 is the same as that of the island stage 25 of the conventional heater plate 21.

このヒータプレート１は、図２のように、キャリアによりパッケージを間欠搬送する搬送手段を備えるパッケージ加熱装置７に用いられる。チップ部品である半導体素子２８の搭載処理が完了したパッケージ１２は、キャリア８に搭載された状態で、図示しない搬送機構により一定のタクトタイムの経過ごとに順次に水平な搬送経路にしたがって図中の左から右方向へと間欠搬送される。キャリア８は、金属性の薄板にパッケージ１２の形状に合わせた略矩形状の開口を所定の間隔をおいて設けたものであり、図３のように搬送方向に直交する幅方向でパッケージ１２の両端部を支持している。また、搬送機構のタクトタイムは、少なくともワイヤボンディングに必要な時間を設定する必要がある。本実施形態では、タクトタイムを１５秒程度とするが、これに限定されるものではなく、要求される生産効率を維持する範囲内で適宜変更可能である。   As shown in FIG. 2, the heater plate 1 is used in a package heating apparatus 7 that includes a conveyance unit that intermittently conveys a package by a carrier. The package 12 in which the mounting process of the semiconductor element 28 which is a chip component is completed is shown in the drawing according to a horizontal transport path in order with a lapse of a certain tact time by a transport mechanism (not shown) while being mounted on the carrier 8. Intermittently conveyed from left to right. The carrier 8 is a metal thin plate provided with substantially rectangular openings that match the shape of the package 12 at a predetermined interval. The carrier 8 has a width direction orthogonal to the transport direction as shown in FIG. Supports both ends. Moreover, it is necessary to set at least the time required for wire bonding as the tact time of the transport mechanism. In this embodiment, the tact time is set to about 15 seconds, but is not limited to this, and can be changed as appropriate within a range in which the required production efficiency is maintained.

ヒータプレート１は、ヒータ１３に取り付けられた状態でキャリア８の下方に設けられている。ヒータ１３は、ヒータプレート１を加熱して設定された温度に維持する。本実施形態では、設定温度を２００℃程度とするが、これに限定されるものではなく、要求されるワイヤボンディングの密着性を維持する範囲内で適宜変更可能である。   The heater plate 1 is provided below the carrier 8 while being attached to the heater 13. The heater 13 heats the heater plate 1 to maintain the set temperature. In the present embodiment, the set temperature is about 200 ° C., but the present invention is not limited to this, and can be appropriately changed within a range that maintains the required adhesion of wire bonding.

ヒータプレート１及びヒータ１３は、昇降機構１０に取り付けられており、キャリア８が所定の位置で停止するたび、パッケージ１２の底面に向かって一定ストロークだけ上昇する。この時、アイランドステージ５は、ボンディング処理位置の直下に位置するボンディング準備位置で停止しているパッケージ１２の底面を、上面で支持したままボンディング処理位置まで押し上げる。同時に、第一及び第二プリヒートステージ３、４は、ボンディング準備位置の上流側で停止しているパッケージ１２の底面と各々の上面との間に隙間が形成された状態で、それぞれパッケージ１２を加熱する。この隙間は、前述したように第一及び第二プリヒートステージ３、４の高さがアイランドステージ５よりも低いために形成されるものである。ワイヤボンディング処理が完了後、昇降機構１０は、ヒータプレート１を降下させ、ボンディング処理位置にあるパッケージ１２をボンディング処理位置に戻す。   The heater plate 1 and the heater 13 are attached to the elevating mechanism 10 and ascend by a fixed stroke toward the bottom surface of the package 12 whenever the carrier 8 stops at a predetermined position. At this time, the island stage 5 pushes up the bottom surface of the package 12 stopped at the bonding preparation position located immediately below the bonding processing position to the bonding processing position while being supported by the upper surface. At the same time, the first and second preheat stages 3 and 4 heat the package 12 in a state in which a gap is formed between the bottom surface of the package 12 stopped at the upstream side of the bonding preparation position and each top surface. To do. This gap is formed because the height of the first and second preheat stages 3 and 4 is lower than that of the island stage 5 as described above. After the wire bonding process is completed, the elevating mechanism 10 lowers the heater plate 1 and returns the package 12 at the bonding process position to the bonding process position.

ボンディング処理位置の上方には、ワイヤボンディング装置２０のキャピラリ９が配置されている。キャピラリ９は、ワイヤボンディング装置２０に組み込まれたプログラムにより、ボンディングパッド３０と内部リード３２の配置に従って移動しつつ、先端の穴から金線３１を吐出してボンディングパッド３０と内部リード３２とを接続していく。   The capillary 9 of the wire bonding apparatus 20 is disposed above the bonding processing position. The capillary 9 connects the bonding pad 30 and the internal lead 32 by discharging the gold wire 31 from the hole at the tip while moving according to the arrangement of the bonding pad 30 and the internal lead 32 by the program incorporated in the wire bonding apparatus 20. I will do it.

アイランドステージ５の上面には、従来のように複数の吸着孔６が設けられている。この吸着孔６は、装置内に設けた吸気機構１１と接続されており、ワイヤボンディング処理中にパッケージ１２の底面を吸着することで、アイランドステージ５の上面の所定位置にパッケージ１２を固定することができる。したがって、ワイヤボンディング処理を確実に行うことができる。   A plurality of suction holes 6 are provided on the upper surface of the island stage 5 as in the prior art. The suction hole 6 is connected to an intake mechanism 11 provided in the apparatus, and the package 12 is fixed at a predetermined position on the top surface of the island stage 5 by sucking the bottom surface of the package 12 during the wire bonding process. Can do. Therefore, the wire bonding process can be reliably performed.

次に本発明の作用について説明する。所定の前工程を経て半導体素子２８が組み込まれたパッケージ１２は、パッケージ加熱装置７のキャリア８に搭載される。そして、パッケージ１２は間欠搬送されつつ、最初に第一プリヒートステージ３の上方で停止して加熱される。ここで、昇降機構１０がヒータプレート１を上昇させることで、第一プリヒートステージ３の上面とパッケージ１２の底面との間には一定の隙間が形成される。第一プリヒートステージ３はこの隙間を介してパッケージ１２を加熱する。次にパッケージ１２は、第二プリヒートステージ４の上方で停止して、第二プリヒートステージ４により同様に加熱される。このように、パッケージ１２は、第一及び第二プリヒートステージ３、４との隙間を介して間接的に加熱されるので、図４のように、パッケージ１２を従来よりも緩やかに温度上昇することができる。   Next, the operation of the present invention will be described. The package 12 in which the semiconductor element 28 is incorporated through a predetermined pre-process is mounted on the carrier 8 of the package heating device 7. The package 12 is first stopped above the first preheat stage 3 and heated while being intermittently conveyed. Here, as the elevating mechanism 10 raises the heater plate 1, a certain gap is formed between the upper surface of the first preheat stage 3 and the bottom surface of the package 12. The first preheat stage 3 heats the package 12 through this gap. Next, the package 12 stops above the second preheat stage 4 and is similarly heated by the second preheat stage 4. Thus, since the package 12 is indirectly heated through the gap between the first and second preheat stages 3 and 4, the temperature of the package 12 is gradually increased as compared with the conventional case as shown in FIG. Can do.

次にパッケージ１２は、アイランドステージ５の上方のボンディング準備位置に停止し、昇降機構１０がヒータプレート１を上昇させることにより、パッケージ１２はアイランドステージ５に支持された状態でボンディング処理位置まで押し上げられる。そして、吸気機構１１の作用によりパッケージ１２はアイランドステージ５の上面の所定位置に固定される。こうしてパッケージ１２は、アイランドステージ５と接触することで直接加熱されて設定温度を維持された状態で、キャピラリ９によってワイヤボンディング処理が確実に施される。その後、パッケージ１２は、モールド樹脂あるいはカバープレートなどで半導体素子を密封する処理などの後工程を経て、半導体として完成される。   Next, the package 12 stops at the bonding preparation position above the island stage 5, and the lifting mechanism 10 raises the heater plate 1, whereby the package 12 is pushed up to the bonding processing position while being supported by the island stage 5. . The package 12 is fixed at a predetermined position on the upper surface of the island stage 5 by the action of the intake mechanism 11. In this way, the package 12 is directly heated by being brought into contact with the island stage 5 and the wire bonding process is reliably performed by the capillary 9 in a state where the set temperature is maintained. Thereafter, the package 12 is completed as a semiconductor through a subsequent process such as a process of sealing the semiconductor element with a mold resin or a cover plate.

このようなヒータプレート１及びパッケージ加熱装置７を用いてワイヤボンディング処理を行うことで、単一のヒータプレート１のためにコスト面で有利であるばかりでなく、半導体の生産効率とワイヤボンディングの密着性を低下させずに、パッケージ１２を所定温度まで緩やかに温度上昇させて半導体の歩留まりを向上することができる。実際に行った実験では、第一プリヒートステージ３とパッケージ１２の間隔を０．１５〜０．２ｍｍ、また、第二プリヒートステージ４とパッケージ１２の間隔を０．０５〜０．１５ｍｍとしたところ、従来のタクトタイム１５秒とヒータの温度２００℃の設定を変更することなく、５０００個の半導体をクラックの発生なしでワイヤボンディング処理できたことを確認している。   By performing the wire bonding process using the heater plate 1 and the package heating device 7 as described above, not only is the cost advantageous for the single heater plate 1, but also the semiconductor production efficiency and the adhesion of the wire bonding are achieved. The yield of the semiconductor can be improved by gradually raising the temperature of the package 12 to a predetermined temperature without reducing the performance. In the experiment actually performed, when the interval between the first preheat stage 3 and the package 12 was 0.15 to 0.2 mm, and the interval between the second preheat stage 4 and the package 12 was 0.05 to 0.15 mm, It was confirmed that 5000 semiconductors could be wire-bonded without cracking without changing the conventional tact time of 15 seconds and the heater temperature of 200 ° C.

なお、本実施形態において、ヒータプレート１にはプリヒートステージを２箇所設けたが、これに限られるものではなく、ワイヤボンディング装置の設計に合わせて任意の個数にすることができる。また、前述した実験のごとく、図５のようなヒータプレート１７を用いることもできる。このヒータプレート１７は、ヒータベース１８とアイランドステージ１６は本実施形態と同一であるが、第一及び第二プリヒートステージ１４、１５の上面の高さが異なっている点において相異しており、上流側ほど低くなるように第一プリヒートステージ１４の高さが第二プリヒートステージ１５よりも低くしてある。これにより、温度上昇をいっそう緩やかにすることができる。さらに、本実施形態においてアイランドステージ５の高さを、従来のヒータプレート１１のアイランドステージ２５と同一としたが、昇降機構１０のストロークに応じて適宜決定することができる。   In this embodiment, the heater plate 1 is provided with two preheat stages. However, the present invention is not limited to this, and any number can be used according to the design of the wire bonding apparatus. Further, as in the experiment described above, a heater plate 17 as shown in FIG. 5 can be used. The heater plate 17 is different from the heater base 18 and the island stage 16 in this embodiment, but is different in that the heights of the upper surfaces of the first and second preheat stages 14 and 15 are different. The height of the first preheat stage 14 is lower than that of the second preheat stage 15 so as to be lower toward the upstream side. Thereby, the temperature rise can be further moderated. Furthermore, although the height of the island stage 5 is the same as that of the island stage 25 of the conventional heater plate 11 in the present embodiment, it can be appropriately determined according to the stroke of the lifting mechanism 10.

本発明のヒータプレートを示す斜視図と側面図である。It is the perspective view and side view which show the heater plate of this invention. パッケージ加熱装置の概略図である。It is the schematic of a package heating apparatus. パッケージ加熱装置の搬送方向と直交する方向におけるパッケージとキャリアの正面図である。It is a front view of the package and carrier in the direction orthogonal to the conveyance direction of a package heating apparatus. パッケージの時間に対する温度上昇を示す。Shows temperature rise over time of package. 他の実施例のヒータプレートを示す斜視図と側面図である。It is the perspective view and side view which show the heater plate of another Example. 従来のヒータプレートを示す斜視図と側面図である。It is the perspective view and side view which show the conventional heater plate. クラックの入った半導体を示す上面図と側面図である。It is the top view and side view which show the semiconductor with a crack.

符号の説明Explanation of symbols

１，１７，２１ ヒータプレート
２，１８，２２ ヒータベース
３，１４，２３ 第一プリヒートステージ
４，１５，２４ 第二プリヒートステージ
５，１６，２５ アイランドステージ
６，２６ 吸着孔
７ パッケージ加熱装置
８ キャリア
９ キャピラリ
１０ 昇降機構
１１ 吸気機構
１２ パッケージ
１３ ヒータ
２０ ワイヤボンディング装置
２７ 半導体
２８ 半導体素子
２９ セラミックフレーム
３０ ボンディングパッド
３１ 金線
３２ 内部リード
３４ クラック
３５ セラミックベース
３６ 低融点ガラス層 1,17,21 Heater plate 2,18,22 Heater base 3,14,23 First preheat stage 4,15,24 Second preheat stage 5,16,25 Island stage 6,26 Adsorption hole 7 Package heating device 8 Carrier DESCRIPTION OF SYMBOLS 9 Capillary 10 Lifting mechanism 11 Air intake mechanism 12 Package 13 Heater 20 Wire bonding apparatus 27 Semiconductor 28 Semiconductor element 29 Ceramic frame 30 Bonding pad 31 Gold wire 32 Internal lead 34 Crack 35 Ceramic base 36 Low melting glass layer

Claims (4)

チップ部品が組み込まれたパッケージを、ワイヤボンディング処理を行うために間欠搬送する搬送手段とともに用いられ、前記搬送手段によってボンディング準備位置に搬送されたパッケージの底面を支持して加熱するアイランドステージ及び前記ボンディング準備位置の上流側に搬送され停止しているパッケージの底面を加熱するプリヒートステージを共通のヒータベースに一体に形成したヒータプレートにおいて、
前記ボンディング準備位置で停止しているパッケージの底面を前記アイランドステージの上面で支持したときに、上流側で停止しているパッケージの底面と前記プリヒートステージの上面との間に隙間が形成されるように、前記プリヒートステージの高さをアイランドステージよりも低くしたことを特徴とするヒータプレート。 An island stage that is used together with a conveying means that intermittently conveys a package in which chip components are incorporated to perform wire bonding processing, and that supports and heats the bottom surface of the package conveyed to a bonding preparation position by the conveying means, and the bonding In the heater plate that integrally forms a preheat stage that heats the bottom surface of the package that is conveyed and stopped upstream of the preparation position on a common heater base,
When the bottom surface of the package stopped at the bonding preparation position is supported by the top surface of the island stage, a gap is formed between the bottom surface of the package stopped on the upstream side and the top surface of the preheat stage. Further, the heater plate is characterized in that the height of the preheat stage is lower than that of the island stage. 前記プリヒートステージが複数個設けられ、上流側ほど高さを低くしたことを特徴とする請求項１記載のヒータプレート。   The heater plate according to claim 1, wherein a plurality of the preheat stages are provided, and the height is lowered toward the upstream side. 前記アイランドステージの上面に、パッケージの底面を吸着してワイヤボンディング処理中にパッケージを固定する吸着孔が形成されていることを特徴とする請求項１または２記載のヒータプレート。   3. The heater plate according to claim 1, wherein a suction hole for sucking a bottom surface of the package and fixing the package during a wire bonding process is formed on an upper surface of the island stage. チップ部品が組み込まれたパッケージを、ワイヤボンディング処理を行うために間欠搬送する搬送手段と、
前記搬送手段によってボンディング準備位置に搬送されてきたパッケージの底面を支持して加熱するアイランドステージと、前記ボンディング準備位置の上流側で停止しているパッケージの底面を加熱するプリヒートステージとが共通のヒータベースに一体に形成され、前記ボンディング準備位置で停止しているパッケージの底面を前記アイランドステージの上面で支持したときに、上流側で停止しているパッケージの底面と前記プリヒートステージの上面との間に隙間が形成されるように、前記プリヒートステージの高さをアイランドステージよりも低くしたヒータプレートと、
前記搬送手段によりパッケージの間欠搬送が行われた後に前記ヒータプレートを一定ストローク上昇させ、前記ボンディング準備位置で停止しているパッケージの底面を前記アイランドステージの上面で押し上げ、前記パッケージを前記ボンディング準備位置からボンディング処理位置に移動させるとともに、ワイヤボンディング処理が完了した後に前記ヒータプレートを降下させて前記パッケージを前記ボンディング処理位置からボンディング準備位置に戻す昇降手段とを備えたことを特徴とするパッケージ加熱装置。 A conveying means for intermittently conveying a package in which chip components are incorporated in order to perform a wire bonding process;
The island stage that supports and heats the bottom surface of the package that has been transported to the bonding preparation position by the transport means, and the preheat stage that heats the bottom surface of the package that is stopped upstream of the bonding preparation position. When the bottom surface of the package formed integrally with the base and stopped at the bonding preparation position is supported by the top surface of the island stage, the bottom surface of the package stopped upstream and the top surface of the preheat stage A heater plate in which the height of the preheat stage is lower than that of the island stage so that a gap is formed in
After the intermittent transfer of the package by the transfer means, the heater plate is raised by a certain stroke, the bottom surface of the package stopped at the bonding preparation position is pushed up on the upper surface of the island stage, and the package is moved to the bonding preparation position. And a lift means for lowering the heater plate after the wire bonding process is completed and returning the package from the bonding process position to the bonding preparation position. .
JP2007061253A 2007-03-12 2007-03-12 Heater plate and package heating apparatus Withdrawn JP2008227032A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171964A (en) * 2012-02-21 2013-09-02 Ultrasonic Engineering Co Ltd Ultrasonic wire bonding device and ultrasonic wire bonding method
KR101578605B1 (en) 2014-04-29 2015-12-17 세메스 주식회사 Unit for preheating a printed circuit board and apparatus for bonding a die including the same
KR20170071691A (en) * 2015-12-15 2017-06-26 현대모비스 주식회사 Manufacturing method of sensor for vehicle
KR102391071B1 (en) * 2021-02-05 2022-04-27 방훈민 Motor direct connection type heating cooker

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171964A (en) * 2012-02-21 2013-09-02 Ultrasonic Engineering Co Ltd Ultrasonic wire bonding device and ultrasonic wire bonding method
KR101578605B1 (en) 2014-04-29 2015-12-17 세메스 주식회사 Unit for preheating a printed circuit board and apparatus for bonding a die including the same
KR20170071691A (en) * 2015-12-15 2017-06-26 현대모비스 주식회사 Manufacturing method of sensor for vehicle
KR102399129B1 (en) * 2015-12-15 2022-05-19 현대모비스 주식회사 Manufacturing method of sensor for vehicle
KR102391071B1 (en) * 2021-02-05 2022-04-27 방훈민 Motor direct connection type heating cooker

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