JP2008218096A5 - - Google Patents

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JP2008218096A5
JP2008218096A5 JP2007051593A JP2007051593A JP2008218096A5 JP 2008218096 A5 JP2008218096 A5 JP 2008218096A5 JP 2007051593 A JP2007051593 A JP 2007051593A JP 2007051593 A JP2007051593 A JP 2007051593A JP 2008218096 A5 JP2008218096 A5 JP 2008218096A5
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group
represent
general formula
conductive material
material precursor
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JP2007051593A
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JP2008218096A (en
JP4909123B2 (en
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支持体上に少なくとも物理現像核層とハロゲン化銀乳剤層をこの順に有する導電性材料前駆体において、物理現像核層、もしくはそれに接する層が下記一般式I、若しくはIIで示されるシランカップリング剤を含有することを特徴とする導電性材料前駆体。
Figure 2008218096
(一般式I中、Rは1級アミノ基、2級アミノ基、ウレイド基、アミジノ基、グアニジノ基、ウレイレン基、イソウレイド基、チオウレイド基、チオウレイレン基、イソチオウレイレン基、カルバゾイル基、チオカルバゾイル基、セミカルバジド基、チオセミカルバジド基、カルバゾノ基、カルボノヒドラジド基、チオカルボノヒドラジド基、セミカルバゾノ基、チオセミカルバゾノ基、チオカルバゾノ基、カルボジアゾノ基、チオカルボジアゾノ基、メルカプト基、含窒素複素環基から選ばれる少なくとも1つの官能基を有する基を表す。Rはアルコキシ基又はハロゲン原子からなる基を表し、Rはメチル基、もしくはエチル基を表し、pは1、2又は3を表す。)
Figure 2008218096
(一般式II中、R及びRはそれぞれアルコキシ基又はハロゲン原子からなる基を表し、R及びRはそれぞれメチル基、もしくはエチル基を表し、R及びRは炭素数1〜6の飽和炭化水素基を表し、nは2〜6の自然数であり、p、qはそれぞれ1、2、又は3を表す。)
A conductive material precursor having at least a physical development nucleus layer and a silver halide emulsion layer in this order on a support, wherein the physical development nucleus layer or a layer in contact therewith is represented by the following general formula I or II: A conductive material precursor comprising: a conductive material precursor.
Figure 2008218096
(In the general formula I, R 1 is a primary amino group, secondary amino group, ureido group, amidino group, guanidino group, ureylene group, isoureido group, thioureido group, thioureylene group, isothioureylene group, carbazoyl group, thiocarbazoyl group. Group, semicarbazide group, thiosemicarbazide group, carbazono group, carbonohydrazide group, thiocarbonohydrazide group, semicarbazono group, thiosemicarbazono group, thiocarbazono group, carbodiazono group, thiocarbodiazono group, mercapto group, nitrogen-containing complex Represents a group having at least one functional group selected from a cyclic group, R 2 represents an alkoxy group or a group consisting of a halogen atom, R 3 represents a methyl group or an ethyl group, and p represents 1, 2 or 3 To express.)
Figure 2008218096
(In General Formula II, R 4 and R 9 each represent an alkoxy group or a group consisting of a halogen atom, R 5 and R 8 each represent a methyl group or an ethyl group, and R 6 and R 7 each have 1 to 6 represents a saturated hydrocarbon group, n is a natural number of 2 to 6, and p and q each represent 1, 2, or 3.)
JP2007051593A 2007-03-01 2007-03-01 Conductive material precursor Expired - Fee Related JP4909123B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007051593A JP4909123B2 (en) 2007-03-01 2007-03-01 Conductive material precursor

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Application Number Priority Date Filing Date Title
JP2007051593A JP4909123B2 (en) 2007-03-01 2007-03-01 Conductive material precursor

Publications (3)

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JP2008218096A JP2008218096A (en) 2008-09-18
JP2008218096A5 true JP2008218096A5 (en) 2009-09-24
JP4909123B2 JP4909123B2 (en) 2012-04-04

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JP2007051593A Expired - Fee Related JP4909123B2 (en) 2007-03-01 2007-03-01 Conductive material precursor

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5430921B2 (en) 2008-05-16 2014-03-05 富士フイルム株式会社 Conductive film and transparent heating element
JP5425459B2 (en) 2008-05-19 2014-02-26 富士フイルム株式会社 Conductive film and transparent heating element
JP5443792B2 (en) * 2009-03-11 2014-03-19 三菱製紙株式会社 Easy adhesive film
JP6207846B2 (en) 2013-03-04 2017-10-04 富士フイルム株式会社 Transparent conductive film and touch panel
JP2019121580A (en) * 2018-01-11 2019-07-22 三菱製紙株式会社 Conductive material
US20210165511A1 (en) * 2018-01-11 2021-06-03 Mitsubishi Paper Mills Limited Conductive material and treatment method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11184056A (en) * 1997-10-14 1999-07-09 Fuji Photo Film Co Ltd Color diffusion transfer silver halide sensitive material and heat developed image forming method
JP2000010257A (en) * 1998-06-18 2000-01-14 Mitsubishi Paper Mills Ltd Mask for exposure and its production
JP2001092093A (en) * 1999-09-17 2001-04-06 Fuji Photo Film Co Ltd Processing member and heat developed image forming method using same
JP2001281867A (en) * 2000-03-29 2001-10-10 Mitsubishi Paper Mills Ltd Photomechanical process for planographic printing plate
EP1553212B1 (en) * 2002-07-12 2017-08-23 Fujimori Kogyo Co., Ltd. Electromagnetic wave shield material and process for producing the same

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