JP2008209957A - X-ray mask, its manufacturing method and microcomponent produced using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide at a low cost an X-ray mask with a structure having a high aspect ratio absorber pattern by ensuring a large exposure area by improving a thin film strength. <P>SOLUTION: The X-ray mask has a structure to fix and stack two or more kinds of X-ray masks including an X-ray mask 51 comprising at least a first absorber pattern 53 and a transmissible material 52 surrounding the same, and an X-ray mask 51' comprising a second absorber pattern 53' and a transmissible material 52' surrounding the same so that whole of the absorber patterns 53, 53' are covered with the transmissible materials 52, 52'. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an X-ray mask, and more particularly to an X-ray mask used for manufacturing a micro component.

  X-ray lithography using synchrotron radiation is positioned as an exposure technique that can transfer an extremely small fine pattern with high accuracy by the short wavelength of X-rays. Major applications in this field include SiLSI process technology development for forming micro dimensions of 0.2 μm or less, and LIGA (Lithographie Galvanforming Abforming) process technology development for manufacturing a three-dimensional micromachine using a high aspect ratio. Both are active in research and development. The LIGA process is described in, for example, Micromachine Research Group materials of the Institute of Electrical Engineers; MM-97-6 (February 1997). The X-ray mask is composed of an absorber pattern that hardly transmits X-rays on a thin film substrate that is easy to transmit X-rays. FIG. 23 shows a conventional X-ray mask. A structure in which a SiN thin film substrate 202 and an Au absorber pattern 203 are formed on a Si wafer and Si is etched from the back surface while leaving the peripheral Si 205 is often used. Usually, the Si wafer is used by being bonded to a strong support frame 204.

  As can be seen from the fact that the conventional X-ray mask has a SiN thin film substrate thickness of about 1 μm, the strength of the thin film is weak and it is difficult to realize a mask with a large exposure area. Further, in this structure, since the adhesive force of the Au absorber pattern is weak, it is difficult to form a high aspect ratio absorber pattern. Here, the aspect ratio refers to the ratio of the length (short side) of one side of the upper surface or the lower surface of the absorber pattern to the height (long side) of the side surface.

  A first object of the present invention is to provide an X-ray mask structure that can produce an absorber pattern with a high aspect ratio over a large exposure area with good reproducibility and is durable for use. A second object of the present invention is to provide a manufacturing method for manufacturing an X-ray mask having the above structure with a high yield and at a low cost. A third object of the present invention is to provide high-precision micro parts at low cost using the X-ray mask of the present invention. An object of the present invention is to provide an X-ray mask structure that is optimal for a LIGA process.

  Means for solving the problems of the prior art will be described below. The X-ray mask which is the basis of the present invention is characterized by a structure in which an absorber pattern 3 is fixed to a transmissive material 2 made of resin as shown in FIG. Since the absorber pattern is bonded and fixed to a well-stretched resin-based transmission material, it is highly accurate, and an X-ray mask having an absorber pattern with a high aspect ratio can be easily realized. Further, since a resin having excellent temperature stability and mechanical strength such as polyimide can be selected as the transmission material, a mask with a large exposure area can be easily formed even with a film thickness of about 3 μm, and the irradiation time can be reduced.

  The first object is achieved by an X-ray mask structure in which an absorber pattern is bonded and fixed to a transparent material made of resin. The second object is to form a mask pattern for electrolytic plating on a conductive substrate, to form a metal pattern that absorbs X-rays by electrolytic plating, and to remove the mask pattern for electrolytic plating. And a step of fixing the metal pattern to the surface of the resin-based permeable material fixed by applying tension to the support frame, and a step of removing the metal pattern from the conductive substrate. . The third object is achieved by manufacturing a micro component using the X-ray mask.

(1) An X-ray mask having a large exposure area can be provided with good reproducibility.
(2) A high aspect ratio X-ray mask can be easily formed and can be provided at low cost.
(3) Since the absorber is covered with a transmitting material, the mask is less contaminated and can be cleaned, and the life of the X-ray mask is extended.
(4) An absorber material and a transmission material can be freely selected, and a high-precision X-ray mask to a mass production mask can be arbitrarily manufactured.
(5) By using the X-ray mask of the present invention, it has become possible to provide high-quality high-quality micro parts at low cost.
(6) Since the absorber pattern is formed on the transmission material made of a resin film with tension, an absorber pattern having a taper with a high aspect ratio can be stably formed with high accuracy. Therefore, a taper can also be formed on a mold manufactured from an X-ray mask having such an absorber pattern, and this taper effectively functions as a pulling taper when the molded product is peeled off. It can be manufactured very smoothly.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

  Embodiment 1

  First, the first embodiment will be described in detail with reference to FIG. This is a cross-sectional structure of the X-ray mask 1 in which an Au absorber pattern 3 is fixed on a permeable membrane 2 made of polyimide resin. This polyimide resin layer is a film having a thickness of 3 μm, for example, and applies a tension to the support frame 4 made of a strong metal and adheres flatly. Since the film is drawn, the thermal expansion coefficient of the X-ray mask 1 is determined by the material of the support frame 4. FIG. 1B is an enlargement of the main part of the mask pattern. The cross-sectional shape of the Au absorber pattern 3 has an inclination (taper) of about 10 degrees from the vertical so that it can be easily released in the manufacturing process after X-ray irradiation. The inclination angle is not limited to this. In this example, the bottom width is 5 μm, the space is 10 μm, the thickness is 15 μm, the thickness of the polyimide resin 2 is 3 to 5 μm, and the Au absorber pattern is bonded and fixed with an organic agent. The thickness of the polyimide resin 2 that is a transmission material is 3 μm with respect to the thickness of the absorber pattern 3 of 15 μm Au, so that the mask contrast is about X-ray wavelength exposure of about 0.2 to 0.8 nm. It is a value that can be obtained sufficiently. With this structure, it was found that an X-ray mask 1 having a large exposure area with a diameter of about 300 mm can be obtained. If this X-ray mask 1 is used, highly functional micro parts can be supplied at low cost by mass production. The increase in area of the X-ray mask 1 is an improvement of about 10 times (length ratio) compared to the conventional case.

  Further, this X-ray mask 1 was used for exposure development to an X-ray resist made of PMMA (polymethyl methacrylate) having a thickness of 15 mm. That is, the X-ray mask 1 was irradiated with X-rays having a synchrotron radiation wavelength of about 0.2 to 0.8 nm from above, and was exposed and developed on PMMA disposed below the X-ray mask 1. After the development, the taper of PMMA was about 1 °, which was very effective as a die taper for micropart manufacturing.

  Embodiment 2

  Next, a second embodiment will be described in detail with reference to FIG. This is a cross-sectional structure of the X-ray mask 21, and the entire Au absorber pattern 23 is embedded with a polyimide resin 22 to form a mask pattern, and this polyimide resin layer is adhered to a support frame 24 made of a strong metal, A line mask 21 is formed. FIG. 2B is an enlargement of the main part of the mask pattern. The dimensions of the Au absorber pattern 23 are 5 μm wide, 5 μm wide, 15 μm thick (s), and the thicknesses t1 and t2 of the upper and lower surfaces of the polyimide resin 22 are both 5 μm. The thickness of the polyimide resin 22 as a transmission material is 25 μm with respect to the thickness of the Au absorber pattern 23 of 15 μm. This is a value with which a sufficient mask contrast can be obtained for exposure with an X-ray wavelength of about 0.2 to 0.8 nm. Since the Au absorber pattern 23 is embedded in the center of the polyimide resin 22 on the neutral surface of the thin film as in the structure of the present invention, the pattern position is difficult to move even if the mask is slightly deformed. Increasing the thickness of the resin further increases this effect, and the total thickness of the resin may be increased to about 100 μm for the manufacture of micro parts that require highly accurate dimensional processing. Further, it is not necessary to make the thicknesses of the upper surface and the lower surface uniform according to the specifications of the mask, and can be arbitrarily changed. Another feature of the structure of the present invention is that the Au absorber pattern is encased and covered with resin, so it is resistant to dirt and scratches, and it can be cleaned even if foreign material adheres to the surface. Durability can be remarkably improved. With this structure, an X-ray mask having a large exposure area with a diameter of 300 mm or more can be realized, and high-performance micro parts can be supplied at low cost by mass production.

  Embodiment 3

  Next, the third embodiment will be described in detail with reference to FIG. The difference from the structure described in the first and second embodiments is that a polyimide resin 32 is provided so as to surround the other surface of the X-ray mask 31 other than the Au absorber pattern 33. An actual X-ray mask may have a configuration opposite to that shown in FIG. 3 in which the exposed surface of the absorber pattern 33 of Au is fixed in contact with the support frame 34.

  Embodiment 4

  Next, a fourth embodiment will be described in detail with reference to FIG. This is a characteristic of the pattern portion of the X-ray mask 31 and is an example of a cross-sectional structure of the enlarged Au absorber pattern 43. Other structures are the same as those in FIGS. The shape of such a cross-sectional structure can be created by forming a resist pattern before electrolytic plating by two overlapping exposures by a manufacturing method to be described later, and performing electrolytic plating on the resist pattern. An X-ray mask having such a cross-sectional structure has a different amount of X-ray transmission depending on the film thickness of Au. Therefore, when exposed, the same cross-sectional structure is transferred to PMMA. Similar to the tapered shape described in FIG. 1, such a cross-sectional shape is a new feature in that the vertical shape of the micro component can be arbitrarily designed in addition to the purpose of easily releasing the micro component obtained by electrolytic plating. .

  Embodiment 5

  Next, a fifth embodiment will be described in detail with reference to FIG. This is composed of two X-ray masks, that is, an X-ray mask 51 composed of a first Au absorber pattern 53 and a polyimide resin 52 surrounding it, a second Au absorber pattern 53 ′, and a polyimide resin 52 surrounding it. This is an X-ray mask having a structure in which X-ray masks 51 made of 'are precisely overlapped and fixed with an adhesive 55. Two or more masks may be bonded together. As in the fourth embodiment, exposure is performed using this X-ray mask to reduce the number of micro-parts, facilitating manufacture, and X-ray masks used for applications in which functions of thick micro-parts are advanced. It is a feature. Conventionally, a method of using a large number of X-ray masks in accordance with the mark on the sample surface is used. However, if two or more masks are used in advance as in the present invention, the working time is shortened remarkably. There is also a feature that increases productivity. This is more effective for mass production.

  Embodiments 4 and 5 are mask structures suitable for the purpose of arbitrarily designing the shape of the micro component in the thickness direction.

  As described above, in Embodiments 1 to 5, the example of Au as the absorber pattern has been described. However, the electrolytic plating is made of a material having a large atomic number such as Pt, Pd, Ag, Pb, PbSn, and NiW, which is difficult to transmit X-rays. I will add what I can do. Moreover, although the example which used the polyimide resin for the permeation | transmission material has been described, from the main point of this invention, if the precision of an absorber pattern is satisfy | filled on desired conditions, another resin may be sufficient, This is not limited to resins. An insulating film by plasma or photo-excited CVD (Chemical Vapor Deposition) is used as a material surrounding the absorber pattern, and the structure in this case may be a composite with resin. The step of fixing the transmission material to the support frame is characterized in that the expansion coefficient of the X-ray mask can be adjusted by applying an appropriate tension to the transmission material.

  Embodiment 6

  Next, a sixth embodiment will be described in detail with reference to FIG. This shows a flow of main processes for manufacturing the X-ray mask 1 of the first embodiment. (A) Photoresist or X-ray resist 8 is applied to a thickness of about 10 μm on a surface-cleaned stainless steel substrate 7 (hereinafter abbreviated as SUS plate). (B) This is exposed with parallel light (far ultraviolet rays or X-rays) through a light-shielding mask, and developed to form a pattern (electrolytic plating mask pattern) 9 on the resist. The cross-sectional shape of the pattern 9 can be formed at an arbitrary angle from the vertical by optimizing the exposure conditions. (C) Subsequently, Au electrolytic plating is performed using the SUS plate 7 as an electrode until the thickness becomes about 10 μm, thereby forming the absorber pattern 3 of Au. (D) A polyimide film 2 having a thickness of 3 μm is bonded to the support frame 4 by applying a tension, and an adhesive having a thickness of about 2 μm is applied to the surface. The sample formed in (c) is opposed to the surface of the support frame 4 thus prepared. (D) Adhering and fixing the Au absorber pattern 3 to the polyimide film 2 on the support frame 4 (E) Subsequently, the SUS plate 7 is removed, and the pattern (electrolytic plating mask pattern) 9 is peeled off with a chemical solution to manufacture the X-ray mask 1. In this method, since the heat treatment temperature during the manufacturing process is low, there are few factors that cause alignment errors in the Au absorber pattern, and a mask with high dimensional accuracy can be provided.

  In order to obtain a structure in which the absorber pattern is embedded as shown in FIGS. 2 and 3 in this manufacturing method, a polyimide resin or the like is applied to the exposed surface of the Au absorber pattern following the steps described so far. What is necessary is just to add the process of hardening | curing this resin.

  Embodiment 7

  Next, a seventh embodiment will be described in detail with reference to FIGS. 7 and 8 are diagrams showing a flow of main processes for manufacturing the X-ray mask of the second embodiment. In FIG. 7A, a photoresist or X-ray resist 102 is applied to a thickness of about 15 μm on a surface-cleaned stainless steel substrate 101 (hereinafter abbreviated as SUS plate). (B) This is exposed with parallel light (far ultraviolet rays or X-rays) through a light shielding mask and developed to form a pattern 103 in the resist. The cross-sectional shape of this pattern has an aspect ratio of about 3 which is almost vertical. (C) Subsequently, electrolytic plating of Au is performed using the SUS plate 101 as an electrode until the thickness reaches about 15 μm. (D) The pattern 103 is peeled off from the resist and washed, whereby an Au absorber pattern 73 is formed. (E) Subsequently, a polyimide resin 72 is applied, and the resin is cured by heat treatment. The thickness of the cured polyimide resin 72 is adjusted to about 20 μm. As a result, the Au absorber pattern 73 is embedded in the polyimide resin 52. 8 (f), a support frame 74 made of a SUS plate is attached to the surface of the polyimide resin 72 using an adhesive. (G) Thereafter, the SUS plate 101 is removed from the X-ray mask composed of the support frame 74, the polyimide resin 72, and the Au absorber pattern 73. (H) Subsequently, a polyimide resin 72 'is applied to the exposed surface of the Au absorber pattern 73, and the resin is cured by heat treatment. The film thickness of the polyimide resin 72 ′ after curing is adjusted to be about 5 μm. (I) An X-ray mask in which an Au absorber pattern 73 is arranged at the center of the polyimide resin 72 is manufactured.

  Since the manufacturing methods described in the sixth and seventh embodiments can be produced by a conventionally used manufacturing apparatus, the manufacturing cost of the X-ray mask is low. Further, in the conventional method, the absorber pattern falls down or peels off, and the adhesive strength is weak. However, due to the configuration of the present invention, this is strengthened, and the transmission material is not damaged, so that the production yield is remarkably increased.

  Embodiment 8

  Next, an eighth embodiment will be described with reference to FIG. This is an example in which a mesh 205 having fine holes is manufactured using the X-ray mask of the first embodiment. For example, creation of a Ni mesh having a mesh width of 10 μm, a pitch of 30 μm, and a height of 20 μm is described as follows. A part of a large area X-ray mask according to the present invention is shown in FIG. Exposure to PMMA using an X-ray wavelength of about 0.2 to 0.8 nm of synchrotron radiation using a mask in which each pillar pattern 83 of Au having a height of 5 μm is regularly arranged on the resin film 82 The result of development is shown in (b). As a result, a PMMA pattern 202 having a thickness of 20 μm was formed on the metal plate 201. Thereafter, Ni is formed in the gap of the PMMA pattern 202 by electrolytic plating to a thickness of about 20 μm. When the metal plate 201 and the PMMA pattern are removed, a highly accurate Ni mesh 205 is formed (c). If this mask is used, the mesh can be made higher (thicker) more easily than in the prior art, so if the pitch is the same, the holes in the mesh can be made larger, thereby increasing the aperture ratio and significantly improving the filter efficiency. In addition, because of the strength of the mesh, the pressure resistance has increased, and the use of the device made using this filter has expanded. Since the mask of the present invention has a large area, it is possible to manufacture a large number of meshes with high precision in one exposure, and to supply high-quality micro components at a low cost.

  Embodiment 9

  The ninth embodiment will be described with reference to FIGS. 10, 11, and 12. In this embodiment, first, the X-ray mask 91 (FIG. 10) is manufactured by the same method as that of the above-described sixth embodiment. That is, generally speaking, the light shielding mask is irradiated with parallel light to form an electrolytic plating mask pattern on the resist thereunder, and the electrolytic plating mask pattern is subjected to electrolytic plating to include an Au absorber pattern. A sample is formed, and the sample is inverted and bonded and fixed on a polyimide resin film to which tension is applied, and then the electrolytic plating mask pattern is removed with a chemical and peeled off. In this way, an X-ray mask 91 made of a polyimide resin film 92 and an Au absorber pattern 93 adhered and fixed thereon is formed as shown in FIG. In the center of the absorber pattern 93, a meandering void 99 having a linear length (stroke) of about 350 μm and a width of 30 μm is formed in accordance with the shape of the light shielding mask. The polyimide resin film 92 has a thickness of 20 μm, and the absorber pattern 93 thereon has a thickness of 2, 5 μm.

  Next, exposure and development are performed using the X-ray mask 91 obtained as described above. That is, the X-ray mask 91 is irradiated with X-rays having a synchrotron radiation wavelength of about 0.2 to 0.8 nm from above, and a PMMA (X-ray resist) 95 having a thickness of 130 μm is disposed below the X-ray mask 91. Develop with exposure. As a result, a gap 99A having a meandering shape corresponding to the gap 99 is formed in the PMMA 95 (FIG. 11).

  After development, Ni having a hardness of 500 Hv is electrodeposited in a thickness of 130 μm in the gap 99A of the PMMA 95, and then the PMMA 95 is removed with a solvent and peeled off from the SUS plate 96. A spring 90 is obtained. A large number of microsprings 90 can be manufactured simultaneously by the above-described method. These microsprings 90 have constant spring properties, good mechanical strength, and good reproducibility, and exhibited excellent performance as contact terminals used in semiconductor probes for semiconductor element inspection.

  Embodiment 10

  Next, a tenth embodiment will be described with reference to FIGS. In the tenth embodiment, an X-ray resist is patterned using the same X-ray mask as in the first embodiment, and a plastic mold having a high aspect ratio is manufactured. Thereafter, a plastic molded product is manufactured using the mold, and a metal product is manufactured using the plastic molded product.

  FIG. 13 shows an X-ray mask 101 manufactured by the same method as in the sixth embodiment. The X-ray mask 101 includes a polyimide resin film 102 and an absorber pattern 103 bonded and fixed on the polyimide resin film 102. The absorber pattern 103 has a taper angle of 10 °, a pitch of 250 μm, and a thickness of 10 μm. is there.

  Using this X-ray mask 101, an X-ray resist 105 made of PMMA having a thickness of 1 mm coated on SUS 106 is exposed and developed. That is, the X-ray mask 101 is irradiated with X-rays having a synchrotron radiation wavelength of about 0.2 to 0.8 nm from above and disposed below the PMMA (X-ray resist) 105 having a thickness of 1 mm. Develop with exposure. As a result, a patterned PMMA 105 similar to the shape of the absorber pattern 103 of the X-ray mask 101 is formed on the SUS 106 (FIG. 12). The tilt angle of this patterned PMMA 105 was 1 °. This 1 ° has been found to work very effectively as a punching taper for plastic molding described later.

  Next, the patterned PMMA 105 is electrodeposited to produce a plastic molding die 107 (FIG. 15), and the die 107 is peeled off from the patterned PMMA 105. Then, the mold 107 is filled with plastic and molded to produce a plastic molded product (FIG. 16).

  17 and 18 show the plastic molded article thus obtained. The plastic molded article 110 in FIG. 17 is a mesh having a cylindrical hole, and the plastic molded article 111 in FIG. 18 has a prismatic hole. In either case, the taper was manufactured using the taper mold 107, so that this taper functioned effectively as a pulling taper and could be manufactured very smoothly without burrs.

  19 to 22 show a case where a metal product is further manufactured from a plastic molded body. First, at the time of plastic molding to the mold 107, in order to integrate the plastic bottom, as shown in FIG. 19, the mold 107 is lifted by about 3 mm to have a recess, and the recess is filled with plastic. Then, the plastic molded body 112 is formed. Next, as shown in FIG. 20, the conductor forming film 113 is formed on the surface of the plastic molded body 112 by conducting a conductor treatment, and then only the upper end portion is wiped to conduct the conductor treatment film. 113 is removed (FIG. 21), and then metal is deposited and filled in the conductive portion 114 by electrolytic plating. In the case where the conductive film 113 is a metal such as Pd having catalytic properties, it is not necessary to apply a voltage, and Ni or Cu can be deposited electrolessly.

  Thereafter, the metal deposit is peeled off from the plastic molded body 112 to obtain a mesh-like metal product 115 as shown in FIG. 22, for example. According to this technique, the taper of the plastic molded body 112 caused by the taper formed on the absorber pattern 103 of the X-ray mask 102 acts effectively, and the metal deposit can be smoothly peeled off, and the product at the time of peeling. The thing without the deformation of was obtained.

1 is a main configuration diagram of an X-ray mask according to a first embodiment of the present invention. The main block diagram of the X-ray mask of Embodiment 2 of this invention. The main block diagram of the X-ray mask of Embodiment 3 of this invention. The main block diagram of the X-ray mask of Embodiment 4 of this invention. The main block diagram of the X-ray mask of Embodiment 5 of this invention. FIG. 3 is a main manufacturing process diagram of the X-ray mask of Embodiment 1 of the present invention. The figure which shows the first half of the main manufacturing processes of the X-ray mask of Embodiment 2 of this invention. The figure which shows the second half of the main manufacturing processes of the X-ray mask of Embodiment 2 of this invention. FIG. 2 is a micropart diagram of a mesh structure manufactured using the X-ray mask of Embodiment 1 of the present invention. The figure which shows the X-ray mask in Embodiment 9 of this invention. The figure which shows the X-ray resist after image development in Embodiment 9 of this invention. The figure which shows the microspring manufactured in Embodiment 9 of this invention. The figure which shows the X-ray mask in Embodiment 10 of this invention. The figure which shows the X-ray resist after image development in Embodiment 10 of this invention. The figure which shows the manufacturing method of the metal mold | die in Embodiment 10 of this invention. The figure which shows the manufacturing method of the plastic molded product in Embodiment 10 of this invention. The figure which shows the plastic molded product manufactured in Embodiment 10 of this invention. The figure which shows the plastic molded product manufactured in Embodiment 10 of this invention. The figure which shows the 1st step in the case of manufacturing a metal product from the plastic molding in Embodiment 10 of this invention. The figure which shows the 2nd step in the case of manufacturing a metal product from the plastic molding in Embodiment 10 of this invention. The figure which shows the 3rd step in the case of manufacturing a metal product from the plastic molding in Embodiment 10 of this invention. The figure which shows the metal product manufactured from the plastic molding in Embodiment 10 of this invention. The main block diagram of the conventional X-ray mask.

Explanation of symbols

1, 21, 31, 41, 51, 71, 91, 101 X-ray mask 2, 22, 32, 42, 52, 92, 102 Polyimide resin film 3, 23, 33, 43, 53, 73, 93, 103 Absorption Body pattern 4, 24, 44, 54, 74 Support frame

Claims (6)

  In the configuration of the X-ray mask, at least two kinds of X-ray masks composed of at least a first absorber pattern and a transmissive material surrounding the first absorber pattern and a second absorber pattern and a transmissive material surrounding the second absorber pattern. An X-ray mask having a structure in which the X-ray mask is superposed and fixed, and the entire absorber pattern is covered with a transmissive material.   In the configuration of the X-ray mask, at least two kinds of X-ray masks composed of at least a first absorber pattern and a transmissive material surrounding the first absorber pattern and a second absorber pattern and a transmissive material surrounding the second absorber pattern. An X-ray mask having a structure in which the X-ray mask is superposed and fixed, and the other surface except the upper surface or the lower surface of the absorber pattern is covered with a transmissive material. .   In the production of an X-ray mask, a step of forming a mask pattern for electrolytic plating on a conductive substrate, a step of forming a sample including a metal pattern by applying electrolytic plating to the mask pattern for electrolytic plating, and the electrolytic plating An X-ray mask mainly comprising a step of removing a mask pattern, a step of applying a resin to the mask surface and curing the resin, a step of fixing a support frame to the mask surface, and a step of removing the conductive substrate. The method for manufacturing an X-ray mask according to claim 1, further comprising a step of superposing and fixing two or more types of X-ray masks.   An X-ray mask using the X-ray mask according to claim 1 or 2 to transfer a pattern to an X-ray resist by exposure and development, and to form a micro component using the pattern. Micro parts manufactured using   Using the X-ray mask according to claim 1 or 2, the pattern is transferred to the X-ray resist by exposure and development, and electrodeposited to the pattern to produce a plastic molding die. A micro component manufactured using an X-ray mask characterized in that a micro component made of plastic is formed using a metal mold.   Using the X-ray mask according to claim 1 or 2, the pattern is transferred to the X-ray resist by exposure and development, and electrodeposited to the pattern to produce a plastic molding die. A plastic molded body is manufactured using a metal mold, a conductive film is applied to the surface of the plastic molded body, and then the conductive portion is filled with a metal deposit, and the metal deposit is peeled off from the plastic molded body. A micro-component manufactured using an X-ray mask characterized by forming a micro-component made of metal.

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