KR100318545B1 - Fabricating method of the mold of back light unit of liquid crystal device - Google Patents
Fabricating method of the mold of back light unit of liquid crystal device Download PDFInfo
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- KR100318545B1 KR100318545B1 KR1019990059170A KR19990059170A KR100318545B1 KR 100318545 B1 KR100318545 B1 KR 100318545B1 KR 1019990059170 A KR1019990059170 A KR 1019990059170A KR 19990059170 A KR19990059170 A KR 19990059170A KR 100318545 B1 KR100318545 B1 KR 100318545B1
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- Prior art keywords
- pmma
- photoresist
- ray
- liquid crystal
- electroplating
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title abstract description 25
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 33
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 33
- 238000009713 electroplating Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims abstract description 8
- 238000005498 polishing Methods 0.000 claims abstract description 3
- 239000002904 solvent Substances 0.000 claims abstract description 3
- 238000010521 absorption reaction Methods 0.000 claims abstract 2
- 238000002844 melting Methods 0.000 claims abstract 2
- 230000008018 melting Effects 0.000 claims abstract 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 15
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000003746 surface roughness Effects 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 238000001746 injection moulding Methods 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- POLYSEDJIWGPMI-UHFFFAOYSA-J S(=O)(=O)([O-])[O-].[Ni+4].S(=O)(=O)([O-])[O-] Chemical compound S(=O)(=O)([O-])[O-].[Ni+4].S(=O)(=O)([O-])[O-] POLYSEDJIWGPMI-UHFFFAOYSA-J 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133524—Light-guides, e.g. fibre-optic bundles, louvered or jalousie light-guides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0065—Manufacturing aspects; Material aspects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
Abstract
본 발명은 액정소자의 백 라이트 유닛 금형 제조방법을 개시한다.The present invention discloses a method for manufacturing a backlight unit mold of a liquid crystal device.
본 발명은 기판 위에 금속층을 증착하는 단계와, 금속층 위에 PMMA를 도포하는 단계와, PMMA의 표면을 경면으로 가공(polishing)하는 단계와, PMMA 표면에 전기도금을 위한 전도층을 증착하는 단계와, 전도층 위에 감광막을 도포하는 단계와, 감광막에 X-선 마스크 형상을 갖는 자외선(UV) 마스크로 노광 및 현상하여 감광막을 패터닝하는 단계와, 패터닝된 감광막 위에 X-선 흡수층을 전기도금공정으로 도금하여 X-선 마스크를 형성하는 단계와, 불필요한 감광막을 제거하는 단계와, X-선 마스크가 형성된 기판을 좌우방향으로 각각 PMMA에 경사진 입사각으로 노광한 후 현상하여 삼각산맥 형상을 형성하는 단계와, 삼각산맥 형상의 PMMA 위에 전기도금을 위한 전도층을 증착하는 단계와, 용기용매로 PMMA를 녹이는 단계를 포함한다.The present invention includes the steps of depositing a metal layer on a substrate, applying a PMMA on the metal layer, mirror-polishing the surface of the PMMA, depositing a conductive layer for electroplating on the surface of the PMMA, Applying a photoresist on the conductive layer, patterning the photoresist by exposing and developing an ultraviolet (UV) mask having an X-ray mask shape on the photoresist, and plating an X-ray absorption layer on the patterned photoresist by an electroplating process. Forming an X-ray mask, removing an unnecessary photoresist film, exposing the substrate on which the X-ray mask is formed at an angle of incidence to the PMMA in the left and right directions, and then developing a triangle shape. And depositing a conductive layer for electroplating on the triangle-shaped PMMA, and melting the PMMA with a container solvent.
본 발명에 따르면, 방사광 가속기의 X-선을 이용하는 LIGA 공정을 이용하여 표면 조도가 뛰어나고, 기존 기계 절삭 가공 방법보다 손쉽게 액정 소자의 백 라이트 유닛의 사출 성형에 필요한 금형을 제작하는 효과를 얻을 수 있다.According to the present invention, the surface roughness is excellent by using the LIGA process using the X-ray of the radiation accelerator, and the effect of manufacturing a mold required for injection molding of the backlight unit of the liquid crystal device can be obtained more easily than the conventional mechanical cutting method. .
Description
본 발명은 액정소자(liquid crystal device)의 백 라이트 유닛(back lightunit) 금형 제조방법에 관한 것으로, 더욱 상세하게는 방사광 가속기의 싱크로트론 방사광(synchrotron radiation)을 사용하는 X-선(ray) 사진식각(lithography)기술과 전기도금공정을 이용하여 액정소자의 백라이트 유닛을 성형할 수 있는 금형을 제조하는 방법에 관한 것이다.The present invention relates to a method for manufacturing a back light unit mold of a liquid crystal device, and more particularly, to X-ray photo etching using synchrotron radiation of a radiation accelerator. The present invention relates to a method for manufacturing a mold capable of forming a backlight unit of a liquid crystal device by using a lithography technique and an electroplating process.
액정소자의 백 라이트 유닛은 광원에서 나오는 빛을 액정소자 기판 전체에 고르게 전달하는 기능을 하며, 그 표면은 백 마이크론 두께의 여러 가지 표면구조로 구성되어 있다. 표면구조의 표면 조도는 백 라이트 기능에 중요한 요인으로 간주되고 있으며, 삼각산맥 형상의 표면구조가 광범위하게 이용되고 있다.The backlight unit of the liquid crystal device functions to evenly transmit light from the light source to the entire liquid crystal device substrate, and the surface is composed of various surface structures having a thickness of back microns. The surface roughness of the surface structure is considered to be an important factor for the backlight function, and the triangular-shaped surface structure is widely used.
종래에는 이와 같은 백 라이트의 표면구조를 기계 절삭 공정을 통해 제작하였다.Conventionally, the surface structure of such a backlight was manufactured through a mechanical cutting process.
그러나 이와 같은 기계 절삭 공정을 통한 백 라이트 표면구조의 가공은 고도로 숙련된 초정밀 기계가공능력을 요구할 뿐만 아니라 기계가공에 의한 제작방법이므로 표면구조의 표면조도를 어느 한도 이상으로 개선시킬 수 없다는 단점이 있었다.However, the machining of the backlight surface structure through such a mechanical cutting process requires not only highly skilled ultra-precision machining capability, but also a manufacturing method by machining, so that the surface roughness of the surface structure cannot be improved to any limit. .
따라서 본 발명은 이와같은 종래의 문제점을 해결하기 위한 것으로, 방사광 가속기의 싱크로트론 방사광(synchrotron radiation)을 이용하는 X-선 사진식각(X-ray lithography)기술과 전기도금공정을 이용하여 액정소자의 백 라이트 유닛을 성형할 수 있는 금형을 제조하는 방법을 제공하는데 그 목적이 있다.Accordingly, the present invention is to solve such a conventional problem, the backlight of the liquid crystal device using the X-ray lithography technique and electroplating process using synchrotron radiation of the radiation accelerator. It is an object to provide a method of manufacturing a mold capable of molding a unit.
이와 같은 목적을 실현하기 위한 본 발명은 액정소자의 백 라이트 유닛 금형제조방법에 있어서, 기판 위에 금속층을 증착하는 단계와, 금속층 위에 PMMA를 도포하는 단계와, PMMA의 표면을 경면으로 가공(polishing)하는 단계와, PMMA 표면에 전기도금을 위한 전도층을 증착하는 단계와, 전도층 위에 감광막을 도포하는 단계와, 감광막에 X-선 마스크 형상을 갖는 자외선(UV) 마스크로 노광 및 현상하여 감광막을 패터닝하는 단계와, 패터닝된 감광막 위에 X-선 흡수층을 전기도금공정으로 도금하여 X-선 마스크를 형성하는 단계와, 불필요한 감광막을 제거하는 단계와, X-선 마스크가 형성된 기판을 좌우방향으로 각각 PMMA에 경사진 입사각으로 노광한 후 현상하여 삼각산맥 형상을 형성하는 단계와, 삼각산맥 형상의 PMMA 위에 전기도금을 위한 전도층을 증착하는 단계와, 용기용매로 PMMA를 녹이는 단계를 포함한다.In order to achieve the above object, the present invention provides a method for manufacturing a back light unit mold of a liquid crystal device, the method comprising: depositing a metal layer on a substrate, applying a PMMA on the metal layer, and polishing the surface of the PMMA to a mirror surface; And depositing a conductive layer for electroplating on the surface of the PMMA, applying a photosensitive film on the conductive layer, and exposing and developing the photosensitive film with an ultraviolet (UV) mask having an X-ray mask shape on the photosensitive film. Patterning, plating an X-ray absorbing layer on the patterned photosensitive film by an electroplating process to form an X-ray mask, removing an unnecessary photosensitive film, and placing the substrate on which the X-ray mask is formed in the left and right directions, respectively. Exposing the PMMA at an oblique angle of incidence and then developing it to form a triangular shape; and depositing a conductive layer for electroplating on the triangular shape PMMA. And dissolving the PMMA with the container solvent.
본 발명의 상기 목적과 여러 가지 장점은 이 기술 분야에 숙련된 사람들에 의해 첨부된 도면을 참조하여 아래에 기술되는 발명의 바람직한 실시예로부터 더욱 명확하게 될 것이다.The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.
도 1a 내지 도 1h는 본 발명에 따른 액정소자의 백 라이트 유닛 금형 제조방법을 순차적으로 도시한 공정단면도,1A through 1H are cross-sectional views sequentially illustrating a method of manufacturing a backlight unit mold of a liquid crystal device according to the present invention;
도 2는 본 발명에 따른 액정소자의 백 라이트 유닛 금형을 도시한 사시도,2 is a perspective view showing a backlight unit mold of the liquid crystal device according to the present invention;
도 3은 본 발명에 따른 X-선 마스크 형상을 갖는 자외선 마스크를 도시한 평면도.3 is a plan view showing an ultraviolet mask having an X-ray mask shape according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
1 ; 기판 2 ; 금속층(티타늄)One ; Substrate 2; Metal layer (titanium)
3 ; PMMA 4 ; 금속층(크롬/금)3; PMMA 4; Metal layer (chrome / gold)
5 ; 감광막 6 ; X-선 흡수층(X-선 마스크)5; Photosensitive film 6; X-ray absorbing layer (X-ray mask)
7 ; 방사광 X-선 10 ; 금속층(티타늄)7; Emitted light X-ray 10; Metal layer (titanium)
11 ; 백 라이트 유닛 금형11; Backlight unit mold
이하, 첨부된 도면을 참조하여 본 발명의 일실시예를 상세하게 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention.
LIGA란 독일어 Lithographie, Galvanoformung, Abformung의 첫 글자를 따서 만든 단어로 이를 풀이하면 식각(lithography), 도금(electroforming), 사출(molding)을 의미한다. 즉 LIGA는 X-선을 이용한 식각과 도금 및 사출 공정을 통하여 미세 구조물을 제작하는 미세가공 기술을 의미한다.LIGA is a word after the first letters of the German Lithographie, Galvanoformung, and Abformung. It means lithography, electroforming and molding. In other words, LIGA refers to a microfabrication technology for fabricating microstructures through etching, plating and injection processes using X-rays.
LIGA 공정은 다음과 같은 특성을 가지고 있다. 한번의 공정으로 제작할 수 있는 구조물의 높이가 수십 ㎛ ∼ 수 ㎝까지 가능하다. 제작된 구조물의 수직구조가 실현되며, 수직 벽면의 거칠기가 수백 Å 정도를 나타낸다. 구조물의 허용오차를 1/10,000㎝ 이하로 실현할 수 있다. 도금, 사출(폴리머, 세라믹)의 공정에 의하여 선택할 수 있는 재료가 매우 다양하다. 사출이 가능하여 매우 정밀한 구조도 양산에 의해 생산단가가 절감된다.The LIGA process has the following characteristics: The height of the structure which can be manufactured by one process can be several tens of micrometers-several cm. The vertical structure of the fabricated structure is realized, and the roughness of the vertical wall surface is about several hundredÅ. Tolerance of the structure can be realized to 1 / 10,000 cm or less. There are a wide variety of materials that can be selected by the process of plating and injection (polymer, ceramic). Injection is possible, and the production cost is reduced by mass production of very precise structure.
위와 같은 LIGA 공정을 수행하기 위해서는 특히 X-선 노광 및 현상 단계가 중요하며, X-선 노광/현상 단계에서의 치수 오차를 최소화하기 위해선 X-선 광원의 선택적 투과성을 제어할 수 있는 X-선 마스크가 중요하다. 즉, X-선 마스크는 X-선 식각(lithography) 공정에서 감광제(resist)와 X-선 광원 사이에 위치하여 X-선을 선택적으로 투과시키는 기구이다.The X-ray exposure and development steps are particularly important for performing the above LIGA process, and in order to minimize the dimensional error in the X-ray exposure / development step, X-rays can be used to control the selective transmission of the X-ray light source. The mask is important. In other words, the X-ray mask is a mechanism for selectively transmitting X-rays by being located between a photoresist and an X-ray light source in an X-ray lithography process.
LIGA 공정에서 X-선이 조사되는 부분은 손실없이 잘 투과시켜야 하고 반대로 투과시키지 말아야 할 곳은 일정 에너지 이하로 잘 막아야 한다.In the LIGA process, the area irradiated with X-rays should be well transmitted without loss and conversely, where it should not be transmitted, it should be well protected under certain energy.
현재 LIGA 공정에 사용되는 X-선 마스크는 기판 위에 질화실리콘 재질의 얇은 멤브레인막이 형성되고 그 위에 금(Au) 재질의 X-선 흡수체가 형성되어 있다. 질화 실리콘 재질의 멤브레인은 X-선이 거의 손실되지 않고 투과하며, X-선 흡수체(absorber)가 형성되어 있는 부분은 X-선이 투과하지 못하고, 흡수체가 없는 부분에는 X-선이 잘 투과하여 PMMA 또는 감광막을 노광시키게 된다.Currently, the X-ray mask used in the LIGA process has a silicon nitride thin membrane film formed on a substrate and an X-ray absorber made of gold (Au) formed thereon. Membrane made of silicon nitride transmits with little loss of X-rays, while X-rays do not penetrate the part where the X-ray absorber is formed, and X-rays penetrate well in the part where the absorber is not. PMMA or photoresist is exposed.
한편, 노광된 PMMA 또는 감광막 시편은 현상공정으로 노광된 부위를 완전히 제거하여 기판 상의 도금 기저층 또는 금속면을 드러나도록 하여 전기도금 한다.On the other hand, the exposed PMMA or photosensitive film specimen is electroplated by completely removing the exposed part by the development process to expose the plating base layer or the metal surface on the substrate.
이처럼, 패턴이 형성된 현상부위에 금속(Ni, NiP 등)을 전기도금한 후 PMMA 또는 감광막을 제거하면 한번의 공정으로 제작된 구조물의 표면 거칠기를 수백 Å정도까지 제어할 수 있다.As such, after electroplating metal (Ni, NiP, etc.) on the patterned developing part, the surface roughness of the fabricated structure can be controlled to several hundreds of microns by removing the PMMA or the photoresist.
도 1a 내지 도 1h는 본 발명의 바람직한 실시예에 따른 액정소자의 백 라이트 유닛 금형 제조방법을 순차적으로 도시한 공정도이다.1A through 1H are flowcharts sequentially illustrating a method of manufacturing a backlight unit mold of a liquid crystal device according to an exemplary embodiment of the present invention.
본 발명의 실시예에서는 높이 100㎛, 옆면의 기울기가 45°인 금형의 예이다.In the Example of this invention, it is an example of the metal mold | die whose height is 100 micrometers and the inclination of a side surface is 45 degrees.
도 1a를 참조하면, 실리콘 기판(1) 위에 티타늄(2)을 약 1000Å정도 열 증착장치(thermal evaporator)를 이용하여 증착시킨다. 액상 PMMA를 실리콘 기판(1)에 2㎛정도 회전도포(spin coating)한 후, 180℃에서 1시간 동안 열처리한다.Referring to FIG. 1A, titanium 2 is deposited on a silicon substrate 1 using a thermal evaporator. The liquid PMMA is spin coated on the silicon substrate 1 by about 2 μm, and then heat-treated at 180 ° C. for 1 hour.
열처리 후 두께 1mm의 PMMA 판을 MMA를 이용하여 실리콘 기판(1)의 액상 PMMA와 접합시킨 후 1kg정도의 중량을 3시간 정도 가한다.After the heat treatment, the PMMA plate having a thickness of 1 mm is bonded to the liquid PMMA of the silicon substrate 1 using MMA, and then a weight of about 1 kg is added for about 3 hours.
1mm의 PMMA판을 원하는 두께(100㎛)로 가공(lapping)하고 수백Å정도의 거칠기를 갖는 경면으로 가공(polishing)한다. PMMA(3) 표면에 전기도금을 위한 전도층(4)으로 사용될 크롬과 금을 각각 300Å정도를 열 증착장치로 증착시킨다.A PMMA plate of 1 mm is laminated to a desired thickness (100 μm) and polished to a mirror surface having a roughness of several hundreds of millimeters. On the surface of the PMMA 3, chromium and gold, which will be used as the conductive layer 4 for electroplating, are deposited by a thermal evaporation apparatus at about 300 kPa.
이어서, 도 1b를 참조하면, 감광막(photoresist, 5)를 8㎛정도 회전도포시킨 후 열판(hot plate) 위에 놓고 열처리 한다.Subsequently, referring to FIG. 1B, the photoresist 5 is rotated about 8 μm, and then placed on a hot plate and heat treated.
이어서, 도 1c를 참조하면, X-선 마스크 형상을 갖는 자외선 마스크(도 2에 도시)로 자외선 노광한 후 감광막(5)은 현상액에서 현상시킨다.Subsequently, referring to FIG. 1C, the photosensitive film 5 is developed in a developer after ultraviolet exposure with an ultraviolet mask (shown in FIG. 2) having an X-ray mask shape.
이어서, 도 1d를 참조하면, 그 위에 전기도금하여 약 5㎛두께의 X-선 흡수층(6)을 얻는다. 결과적으로 X-선 흡수층(6)이 X-선 마스크 역할을 하게 된다.Next, referring to FIG. 1D, an electroplating thereon is obtained to obtain an X-ray absorbing layer 6 having a thickness of about 5 μm. As a result, the X-ray absorbing layer 6 serves as an X-ray mask.
이어서, 도 1e를 참조하면, 불필요한 감광막(5)을 제거하기 위해 자외선 마스크 없이 자외선에서 노광시킨 후 현상한다.Subsequently, referring to FIG. 1E, development is performed after exposing under ultraviolet light without an ultraviolet mask to remove the unnecessary photosensitive film 5.
이어서, 도 1f를 참조하면, 방사광 가속기에서 나오는 X-선이 PMMA에 입사되는 각을 각각 +45°와 -45°로하여 노광한다. 이때 노광된 좁은 PMMA가 충분히 현상될 수 있도록 PMMA 바닥에 축적되는 에너지의 양이 충분하도록 충분한 시간동안 노광시킨다.Subsequently, referring to FIG. 1F, the angle at which the X-rays emitted from the radiation accelerator are incident on the PMMA is exposed at + 45 ° and -45 °, respectively. At this time, the exposed narrow PMMA is exposed for a sufficient time so that the amount of energy accumulated at the bottom of the PMMA is sufficient to be developed sufficiently.
이어서, 도 1g를 참조하면, 노광된 시편을 PMMA 현상액으로 상온에서 스트링(strring)하여 현상하면 소망하는 형상을 얻을 수 있다.Subsequently, referring to FIG. 1G, when the exposed specimen is stringed and developed at room temperature with a PMMA developer, a desired shape can be obtained.
이어서, 도 1h를 참조하면, 만들어진 PMMA 형상 위에 니켈 도금을 위한 전도층으로 티타늄(10)을 약 300Å 증착시킨다. 술퍼민산옥 니켈 용액에서 장시간 도금을 한 후, 유기 용매로 PMMA를 녹여 실리콘 기판(1)을 제거하면 제 2도에 도시된 바와 같은 니켈 금형을 얻을 수 있다.Next, referring to FIG. 1H, about 300 μs of titanium 10 is deposited onto the conductive PMMA layer for nickel plating. After plating for a long time in a nickel sulphate sulphate solution, the PMMA is dissolved in an organic solvent to remove the silicon substrate 1 to obtain a nickel mold as shown in FIG.
이상, 상기 내용은 본 발명의 바람직한 일실시예를 단지 예시한 것으로 본 발명의 당업자는 본 발명의 요지를 변경시키지 않고 본 발명에 대한 수정 및 변경을 가할 수 있음을 인지해야 한다.In the above description, it should be understood that those skilled in the art can make modifications and changes to the present invention without changing the gist of the present invention as merely illustrative of a preferred embodiment of the present invention.
상술한 바와 같이 본 발명에 따르면, 액정 소자의 백 라이트 유닛의 사출 성형에 필요한 금형을 제작하는 새로운 방법을 제시한다. 특히, 방사광 가속기의 X-선을 이용하는 LIGA 공정을 이용하여 포면 조도가 뛰어나고, 기존 기계 절삭 가공 방법보다 손쉽게 제작할 수 있는 효과를 얻을 수 있다.According to the present invention as described above, a new method for manufacturing a mold required for injection molding of a backlight unit of a liquid crystal device is proposed. In particular, by using the LIGA process using the X-ray of the radiation accelerator, the surface roughness is excellent, it is possible to obtain an effect that can be easily produced than conventional mechanical cutting processing method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100438889B1 (en) * | 2001-10-23 | 2004-07-02 | 학교법인 포항공과대학교 | Manufacturing method of RIBLET using modified LIGA process |
| KR100441881B1 (en) * | 2001-12-07 | 2004-07-27 | 학교법인 포항공과대학교 | Method for manufacturing mold of micro-structure array for optics |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100423555B1 (en) * | 2001-10-31 | 2004-03-18 | 화천기공 주식회사 | A manufacturing system of the mold about a polarizing prism |
| KR20030083361A (en) * | 2002-04-22 | 2003-10-30 | 학교법인 포항공과대학교 | Manufacturing method for molds of lcd backlight unit using negative-tone near-uv photoresist |
| KR100495230B1 (en) * | 2002-05-14 | 2005-06-14 | (주)나노디스플레이 | Manufacturing method of a core of a die for light guide pannel with a prism pattern |
| KR100581152B1 (en) * | 2004-09-15 | 2006-05-17 | 태산엘시디 주식회사 | Manufacturing method of stamper for catapulting light guide plate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0667004A (en) * | 1992-08-25 | 1994-03-11 | Mitsubishi Rayon Co Ltd | Triangular prism sheet for liquid crystal display device and its manufacture |
| KR970048755A (en) * | 1995-12-02 | 1997-07-29 | 김주용 | Backlight device of liquid crystal display device and manufacturing method thereof |
| JPH09222514A (en) * | 1995-06-16 | 1997-08-26 | Kuraray Co Ltd | Production of light guide body |
| JPH11174439A (en) * | 1997-12-11 | 1999-07-02 | Sanyo Electric Co Ltd | Light guide plate, surface light source and liquid crystal display device using it and manufacturing method of light guide plate |
-
1999
- 1999-12-20 KR KR1019990059170A patent/KR100318545B1/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0667004A (en) * | 1992-08-25 | 1994-03-11 | Mitsubishi Rayon Co Ltd | Triangular prism sheet for liquid crystal display device and its manufacture |
| JPH09222514A (en) * | 1995-06-16 | 1997-08-26 | Kuraray Co Ltd | Production of light guide body |
| KR970048755A (en) * | 1995-12-02 | 1997-07-29 | 김주용 | Backlight device of liquid crystal display device and manufacturing method thereof |
| JPH11174439A (en) * | 1997-12-11 | 1999-07-02 | Sanyo Electric Co Ltd | Light guide plate, surface light source and liquid crystal display device using it and manufacturing method of light guide plate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100438889B1 (en) * | 2001-10-23 | 2004-07-02 | 학교법인 포항공과대학교 | Manufacturing method of RIBLET using modified LIGA process |
| KR100441881B1 (en) * | 2001-12-07 | 2004-07-27 | 학교법인 포항공과대학교 | Method for manufacturing mold of micro-structure array for optics |
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