JP2008205078A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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JP2008205078A
JP2008205078A JP2007037620A JP2007037620A JP2008205078A JP 2008205078 A JP2008205078 A JP 2008205078A JP 2007037620 A JP2007037620 A JP 2007037620A JP 2007037620 A JP2007037620 A JP 2007037620A JP 2008205078 A JP2008205078 A JP 2008205078A
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resin layer
passivation film
resin
semiconductor device
layer
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JP4147433B2 (en
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Tatsuhiko Asakawa
達彦 浅川
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To improve reliability in wiring formed on a passivation film. <P>SOLUTION: A semiconductor substrate 10 is prepared, where it has the passivation film 16 that is formed at the upper portion of an integrated circuit 12 and has an irregular surface, and an electrode 14 that is connected to the integrated circuit 12 electrically and is exposed from the passivation film 16 at least partially. A resin layer 20 is formed on the passivation film 16. A second resin layer 22 is formed so that the passivation film 16 and the first resin layer 20 are covered. Wiring 30 is formed so that it passes an area on the second resin layer 22 at the upper portion of the passivation film 16 from an area on the electrode 14 and reaches an area on the second resin layer 22 at the upper portion of the first resin layer 20. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体装置及びその製造方法に関する。   The present invention relates to a semiconductor device and a manufacturing method thereof.

電極パッド及び樹脂層と、電極パッドの表面から樹脂層の表面にかけて配設された配線と、を備える半導体装置が知られている（特許文献１）。樹脂層とその上の配線は外部端子を構成している。この外部端子は、ハンダボールで形成する外部端子よりも狭いピッチで形成することができ、樹脂層によって応力の吸収も可能である。配線は、電極パッドと樹脂層の間ではパッシベーション膜上に形成される。パッシベーション膜は、その下の構造に応じて表面が凹凸になっている。したがって、パッシベーション膜上に形成する配線に影響を与える場合がある。特に、スパッタリングによる導電膜をパッシベーション膜に形成するときに、表面に凹凸があると膜の付着が不均一になって抵抗値の増大や断線をもたらすおそれがあるので、その対策を講じる必要があった。
特開２００５−３５３９８３号公報 There is known a semiconductor device including an electrode pad and a resin layer, and wiring disposed from the surface of the electrode pad to the surface of the resin layer (Patent Document 1). The resin layer and the wiring thereon constitute an external terminal. The external terminals can be formed with a narrower pitch than the external terminals formed of solder balls, and stress can be absorbed by the resin layer. The wiring is formed on the passivation film between the electrode pad and the resin layer. The surface of the passivation film is uneven according to the structure below it. Therefore, the wiring formed on the passivation film may be affected. In particular, when forming a conductive film by sputtering on the passivation film, unevenness on the surface may cause uneven film adhesion, resulting in an increase in resistance value or disconnection, and measures must be taken. It was.
JP-A-2005-353983

本発明の目的は、パッシベーション膜上に形成する配線の信頼性を向上させることにある。   An object of the present invention is to improve the reliability of wiring formed on a passivation film.

（１）本発明に係る半導体装置は、
集積回路の上方に形成されて表面が凹凸面になったパッシベーション膜と、前記集積回路に電気的に接続されて前記パッシベーション膜から少なくとも一部が露出する電極と、を有する半導体基板と、
前記パッシベーション膜上に配置された第１の樹脂層と、
前記パッシベーション膜及び前記第１の樹脂層を覆う第２の樹脂層と、
前記電極上から、前記パッシベーション膜の上方であって前記第２の樹脂層上を通って、前記第１の樹脂層の上方であって前記第２の樹脂層上に至るように形成された配線と、
を有する。本発明によれば、第２の樹脂層によってパッシベーション膜の凹凸面よりも表面を平坦化することができるので、その上に形成する配線の信頼性を向上させることができる。
（２）この半導体装置において、
前記第１の樹脂層よりも、前記第２の樹脂層の耐熱性が高くてもよい。
（３）本発明に係る半導体装置の製造方法は、
集積回路の上方に形成されて表面が凹凸面になったパッシベーション膜と、前記集積回路に電気的に接続されて前記パッシベーション膜から少なくとも一部が露出する電極と、を有する半導体基板を用意する工程と、
前記パッシベーション膜上に第１の樹脂層を形成する工程と、
前記パッシベーション膜及び前記第１の樹脂層を覆うように第２の樹脂層を形成する工程と、
前記電極上から、前記パッシベーション膜の上方であって前記第２の樹脂層上を通って、前記第１の樹脂層の上方であって前記第２の樹脂層上に至るように配線を形成する工程と、
を含む。本発明によれば、第２の樹脂層によってパッシベーション膜の凹凸面よりも表面を平坦化することができるので、その上に形成する配線の信頼性を向上させることができる。
（４）この半導体装置の製造方法において、
前記第１の樹脂層を形成する工程は、熱硬化性の第１の樹脂前駆体層を形成して、前記第１の樹脂前駆体層を加熱することを含み、
前記第２の樹脂層を形成する工程は、前記前記第１の樹脂前駆体層を加熱して硬化させた後に、熱硬化性の第２の樹脂前駆体層を形成することを含んでもよい。
（５）半導体装置の製造方法において、
前記第１の樹脂前駆体層よりも、前記第２の樹脂前駆体層の耐熱性が高くてもよい。 (1) A semiconductor device according to the present invention includes:
A semiconductor substrate having a passivation film formed above the integrated circuit and having an uneven surface; and an electrode electrically connected to the integrated circuit and exposed at least partially from the passivation film;
A first resin layer disposed on the passivation film;
A second resin layer covering the passivation film and the first resin layer;
Wiring formed from above the electrode, above the passivation film and above the second resin layer, and above the first resin layer and above the second resin layer When,
Have According to the present invention, since the surface of the passivation film can be flattened by the second resin layer, the reliability of the wiring formed thereon can be improved.
(2) In this semiconductor device,
The heat resistance of the second resin layer may be higher than that of the first resin layer.
(3) A method for manufacturing a semiconductor device according to the present invention includes:
A step of preparing a semiconductor substrate having a passivation film formed above an integrated circuit and having an uneven surface, and an electrode electrically connected to the integrated circuit and exposed at least partially from the passivation film. When,
Forming a first resin layer on the passivation film;
Forming a second resin layer so as to cover the passivation film and the first resin layer;
A wiring is formed from above the electrode, above the passivation film and through the second resin layer, and above the first resin layer and onto the second resin layer. Process,
including. According to the present invention, since the surface of the passivation film can be flattened by the second resin layer, the reliability of the wiring formed thereon can be improved.
(4) In this method of manufacturing a semiconductor device,
The step of forming the first resin layer includes forming a thermosetting first resin precursor layer and heating the first resin precursor layer.
The step of forming the second resin layer may include forming the thermosetting second resin precursor layer after heating and curing the first resin precursor layer.
(5) In the method for manufacturing a semiconductor device,
The heat resistance of the second resin precursor layer may be higher than that of the first resin precursor layer.

図１は、本発明の実施の形態に係る半導体装置を示す断面図である。半導体装置は、半導体基板１０を有する。半導体基板１０は、最終製品としての半導体装置においては半導体チップであるが、最終製品を得る前の段階では、半導体ウエハである。半導体ウエハを切断して半導体チップが得られる。半導体基板１０には、集積回路１２（半導体チップには１つの集積回路１２／半導体ウエハには複数の集積回路１２）が形成されている。半導体基板１０は、内部配線（図示せず）を介して集積回路１２に電気的に接続された電極１４を有する。半導体基板１０が一方向に長い形状（平面形状が長方形）であって、長い方の辺に沿って、複数の電極１４が配列されている。   FIG. 1 is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention. The semiconductor device has a semiconductor substrate 10. The semiconductor substrate 10 is a semiconductor chip in a semiconductor device as a final product, but is a semiconductor wafer in a stage before obtaining the final product. A semiconductor chip is obtained by cutting the semiconductor wafer. An integrated circuit 12 (one integrated circuit 12 for a semiconductor chip / a plurality of integrated circuits 12 for a semiconductor wafer) is formed on the semiconductor substrate 10. The semiconductor substrate 10 has an electrode 14 that is electrically connected to the integrated circuit 12 via internal wiring (not shown). The semiconductor substrate 10 is long in one direction (planar shape is rectangular), and a plurality of electrodes 14 are arranged along the longer side.

半導体基板１０には、電極１４の少なくとも一部が露出する様にパッシベーション膜１６が形成されている。パッシベーション膜１６は、例えば、ＳｉＯ２やＳｉＮ等の無機材料のみで形成されていてもよい。パッシベーション膜１６は、集積回路１２の上方に形成されており、表面が凹凸面になっている。 A passivation film 16 is formed on the semiconductor substrate 10 so that at least a part of the electrode 14 is exposed. The passivation film 16 may be formed of only an inorganic material such as SiO 2 or SiN. The passivation film 16 is formed above the integrated circuit 12 and has a rough surface.

半導体基板１０の電極１４が形成された面（パッシベーション膜１６上）には、例えばポリイミド樹脂からなる第１の樹脂層２０が形成されている。また、パッシベーション膜１６及び第１の樹脂層２０を覆うように第２の樹脂層２２が形成されている。第１の樹脂層２０及び第２の樹脂層２２の材料としては、ポリイミド樹脂、シリコーン変性ポリイミド樹脂、エポキシ樹脂、シリコーン変性エポキシ樹脂、ベンゾシクロブテン（ＢＣＢ；benzocyclobutene）、ポリベンゾオキサゾール（ＰＢＯ；pol ybenzoxazole）、フェノール系樹脂等などを用いてもよい。第２の樹脂層２２は、パッシベーション膜１６の凹部１８を埋めるように設けられている。第２の樹脂層２２は、第１の樹脂層２０よりも耐熱性が高い材料で形成されている。第２の樹脂層２２の表面は、少なくともパッシベーション膜１６の凹凸面よりも平坦性が高い。   A first resin layer 20 made of, for example, polyimide resin is formed on the surface of the semiconductor substrate 10 on which the electrode 14 is formed (on the passivation film 16). A second resin layer 22 is formed so as to cover the passivation film 16 and the first resin layer 20. Examples of materials for the first resin layer 20 and the second resin layer 22 include polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO; pol). ybenzoxazole), phenolic resin, etc. may be used. The second resin layer 22 is provided so as to fill the recess 18 of the passivation film 16. The second resin layer 22 is formed of a material having higher heat resistance than the first resin layer 20. The surface of the second resin layer 22 has higher flatness than at least the concavo-convex surface of the passivation film 16.

半導体基板１０には配線３０が形成されている。詳しくは、配線３０は、電極１４上から、パッシベーション膜１６の上方であって第２の樹脂層２２上を通って、第１の樹脂層２０の上方であって第２の樹脂層２２上に至る。配線３０は、電極１４上で電極１４に電気的に接続している。配線３０と電極１４は直接接触していてもよいし、両者間に導電膜（図示せず）が介在していてもよい。配線３０は、第１の樹脂層２０の、電極１４とは反対側の端部を越えて、第２の樹脂層２２上に至るように形成されている。配線３０は、電極１４と第１の樹脂層２０の間で、第２の樹脂層２２に密着して形成されている。本実施の形態によれば、第２の樹脂層２２によってパッシベーション膜１６の凹凸面よりも表面を平坦化することができるので、その上に形成する配線３０の信頼性を向上させることができる。   A wiring 30 is formed on the semiconductor substrate 10. Specifically, the wiring 30 extends from above the electrode 14, above the passivation film 16, through the second resin layer 22, above the first resin layer 20, and onto the second resin layer 22. It reaches. The wiring 30 is electrically connected to the electrode 14 on the electrode 14. The wiring 30 and the electrode 14 may be in direct contact, or a conductive film (not shown) may be interposed therebetween. The wiring 30 is formed so as to reach the second resin layer 22 beyond the end of the first resin layer 20 opposite to the electrode 14. The wiring 30 is formed in close contact with the second resin layer 22 between the electrode 14 and the first resin layer 20. According to the present embodiment, since the surface of the passivation film 16 can be flattened by the second resin layer 22, the reliability of the wiring 30 formed thereon can be improved.

図２（Ａ）〜図２（Ｄ）は、本発明の実施の形態に係る半導体装置の製造方法を説明する図である。本実施の形態では、集積回路１２の上方に形成されて表面が凹凸面になったパッシベーション膜１６と、集積回路１２に電気的に接続されてパッシベーション膜１６から少なくとも一部が露出する電極１４と、を有する半導体基板１０を用意する。   2A to 2D are diagrams illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention. In the present embodiment, a passivation film 16 formed above the integrated circuit 12 and having an uneven surface, and an electrode 14 that is electrically connected to the integrated circuit 12 and at least a part of which is exposed from the passivation film 16. Are prepared.

パッシベーション膜１６上に第１の樹脂層２０を形成する。例えば、図２（Ａ）に示すように、熱硬化性の第１の樹脂前駆体層４０を形成する。そして、図２（Ｂ）に示すように、第１の樹脂前駆体層４０を加熱する。熱によって第１の樹脂前駆体層４０は一時的に溶融して表面張力によって丸くなり、その後、硬化して第１の樹脂層２０が形成される。   A first resin layer 20 is formed on the passivation film 16. For example, as shown in FIG. 2A, a thermosetting first resin precursor layer 40 is formed. Then, as shown in FIG. 2B, the first resin precursor layer 40 is heated. The first resin precursor layer 40 is temporarily melted by heat and rounded by surface tension, and then cured to form the first resin layer 20.

パッシベーション膜１６及び第１の樹脂層２０を覆うように第２の樹脂層２２を形成する。例えば、図２（Ｃ）に示すように、熱硬化性の第２の樹脂前駆体層４２を形成する。そして、図２（Ｄ）に示すように、第２の樹脂前駆体層４２を硬化して第２の樹脂層２２を形成する。   A second resin layer 22 is formed so as to cover the passivation film 16 and the first resin layer 20. For example, as shown in FIG. 2C, a thermosetting second resin precursor layer 42 is formed. Then, as shown in FIG. 2D, the second resin precursor layer 42 is cured to form the second resin layer 22.

本実施の形態によれば、第２の樹脂層２２によってパッシベーション膜１６の凹凸面よりも、第２の樹脂層２２の表面を平坦化することができるので、その上に形成する配線３０の信頼性を向上させることができる。また、第１の樹脂前駆体層４０よりも、第２の樹脂前駆体層４２の耐熱性が高い。そのため、第１の樹脂層２０よりも第２の樹脂層２２の耐熱性が高い。したがって、第２の樹脂層２２によって第１の樹脂層２０が熱から保護される。   According to the present embodiment, since the surface of the second resin layer 22 can be flattened by the second resin layer 22 rather than the uneven surface of the passivation film 16, the reliability of the wiring 30 formed thereon can be improved. Can be improved. Further, the heat resistance of the second resin precursor layer 42 is higher than that of the first resin precursor layer 40. Therefore, the heat resistance of the second resin layer 22 is higher than that of the first resin layer 20. Therefore, the first resin layer 20 is protected from heat by the second resin layer 22.

そして、図１に示すように、電極１４上から、パッシベーション膜１６の上方であって第２の樹脂層２２上を通って、第１の樹脂層２０の上方であって第２の樹脂層２２上に至るように配線３０を形成する。配線３０の形成にスパッタリングを適用した場合、従来のパッシベーション膜１６では表面に凹凸があるため、膜厚が不均一になって抵抗値の増大や断線をもたらすおそれがあったが、本実施の形態では、表面の平坦性が向上しているので、このような問題を避けることができる。その他の詳細は、上述した半導体装置の構造から自明な製造方法であるため説明を省略する。   Then, as shown in FIG. 1, from above the electrode 14, above the passivation film 16, through the second resin layer 22, above the first resin layer 20, and above the second resin layer 22. The wiring 30 is formed so as to reach the top. When sputtering is applied to the formation of the wiring 30, the conventional passivation film 16 has irregularities on the surface, which may cause the film thickness to become non-uniform, leading to an increase in resistance value or disconnection. Then, since the flatness of the surface is improved, such a problem can be avoided. Since other details are a manufacturing method that is obvious from the structure of the semiconductor device described above, description thereof is omitted.

本発明は、上述した実施の形態に限定されるものではなく、種々の変形が可能である。例えば、本発明は、実施の形態で説明した構成と実質的に同一の構成（例えば、機能、方法及び結果が同一の構成、あるいは目的及び結果が同一の構成）を含む。また、本発明は、実施の形態で説明した構成の本質的でない部分を置き換えた構成を含む。また、本発明は、実施の形態で説明した構成と同一の作用効果を奏する構成又は同一の目的を達成することができる構成を含む。また、本発明は、実施の形態で説明した構成に公知技術を付加した構成を含む。   The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same purposes and results). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

図１は、本発明の実施の形態に係る半導体装置を示す断面図である。FIG. 1 is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention. 図２（Ａ）〜図２（Ｄ）は、本発明の実施の形態に係る半導体装置の製造方法を説明する図である。2A to 2D are diagrams illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.

符号の説明Explanation of symbols

１０…半導体基板、 １２…集積回路、 １４…電極、 １６…パッシベーション膜、 １８…凹部、 ２０…第１の樹脂層、 ２２…第２の樹脂層、 ３０…配線、 ４０…第１の樹脂前駆体層、 ４２…第２の樹脂前駆体層   DESCRIPTION OF SYMBOLS 10 ... Semiconductor substrate, 12 ... Integrated circuit, 14 ... Electrode, 16 ... Passivation film, 18 ... Recessed part, 20 ... 1st resin layer, 22 ... 2nd resin layer, 30 ... Wiring, 40 ... 1st resin precursor Body layer, 42 ... second resin precursor layer

Claims (5)

集積回路の上方に形成されて表面が凹凸面になったパッシベーション膜と、前記集積回路に電気的に接続されて前記パッシベーション膜から少なくとも一部が露出する電極と、を有する半導体基板と、
前記パッシベーション膜上に配置された第１の樹脂層と、
前記パッシベーション膜及び前記第１の樹脂層を覆う第２の樹脂層と、
前記電極上から、前記パッシベーション膜の上方であって前記第２の樹脂層上を通って、前記第１の樹脂層の上方であって前記第２の樹脂層上に至るように形成された配線と、
を有する半導体装置。 A semiconductor substrate having a passivation film formed above the integrated circuit and having an uneven surface; and an electrode electrically connected to the integrated circuit and exposed at least partially from the passivation film;
A first resin layer disposed on the passivation film;
A second resin layer covering the passivation film and the first resin layer;
Wiring formed from above the electrode, above the passivation film and above the second resin layer, and above the first resin layer and above the second resin layer When,
A semiconductor device. 請求項２に記載された半導体装置において、
前記第１の樹脂層よりも、前記第２の樹脂層の耐熱性が高い半導体装置。 The semiconductor device according to claim 2,
A semiconductor device in which the heat resistance of the second resin layer is higher than that of the first resin layer. 集積回路の上方に形成されて表面が凹凸面になったパッシベーション膜と、前記集積回路に電気的に接続されて前記パッシベーション膜から少なくとも一部が露出する電極と、を有する半導体基板を用意する工程と、
前記パッシベーション膜上に第１の樹脂層を形成する工程と、
前記パッシベーション膜及び前記第１の樹脂層を覆うように第２の樹脂層を形成する工程と、
前記電極上から、前記パッシベーション膜の上方であって前記第２の樹脂層上を通って、前記第１の樹脂層の上方であって前記第２の樹脂層上に至るように配線を形成する工程と、
を含む半導体装置の製造方法。 A step of preparing a semiconductor substrate having a passivation film formed above an integrated circuit and having an uneven surface, and an electrode electrically connected to the integrated circuit and exposed at least partially from the passivation film. When,
Forming a first resin layer on the passivation film;
Forming a second resin layer so as to cover the passivation film and the first resin layer;
A wiring is formed from above the electrode, above the passivation film and through the second resin layer, and above the first resin layer and onto the second resin layer. Process,
A method of manufacturing a semiconductor device including: 請求項３に記載された半導体装置の製造方法において、
前記第１の樹脂層を形成する工程は、熱硬化性の第１の樹脂前駆体層を形成して、前記第１の樹脂前駆体層を加熱することを含み、
前記第２の樹脂層を形成する工程は、前記前記第１の樹脂前駆体層を加熱して硬化させた後に、熱硬化性の第２の樹脂前駆体層を形成することを含む半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 3,
The step of forming the first resin layer includes forming a thermosetting first resin precursor layer and heating the first resin precursor layer.
The step of forming the second resin layer includes forming a thermosetting second resin precursor layer after heating and curing the first resin precursor layer. Production method. 請求項３又は４に記載された半導体装置の製造方法において、
前記第１の樹脂前駆体層よりも、前記第２の樹脂前駆体層の耐熱性が高い半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 3 or 4,
A method for manufacturing a semiconductor device, wherein the heat resistance of the second resin precursor layer is higher than that of the first resin precursor layer.
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