JP2008205033A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a method for manufacturing a semiconductor device having an interlayer insulating film composed of an O<SB>3</SB>/TEOS based thermal-USG film which is formed in a process at a comparatively low temperature and capable of suppressing the generation of scratches in a CMP flattening treatment step concerning the formation of the interlayer insulating film in the semiconductor device, where a heat treatment temperature is limited by a material constituting a MOS transistor. <P>SOLUTION: The method includes: a step for forming the interlayer insulating film 22 composed of a silicon oxide film where impurities are not introduced by thermal CVD on a semiconductor base material where a field effect transistor having silicide films 14, 17 on a diffusion layer 16 to be a source/drain region and/or a gate electrode 13 is formed on a silicon substrate 1; and a step for removing a gaseous product mixed into the silicon oxide film at a temperature substantially preventing influences on the silicide films 14, 17. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device having an interlayer insulating film and a method for manufacturing the same.

  In a conventional semiconductor device, a multi-layer USG (Undoped Silicate Glass) film is formed between a gate of a field effect transistor (hereinafter referred to as a MOS (Metal-Oxide Semiconductor) transistor) constituting a logic device and a first wiring. An interlayer insulating film is formed.

  In a general semiconductor device manufacturing process, after an interlayer insulating film is formed, a planarization process is performed by CMP (Chemical Mechanical Polishing). At this time, if a low-hardness interlayer insulating film is used, scratches are easily generated during the CMP planarization process, which causes a problem. Therefore, the interlayer insulating film needs to have a hardness that does not generate a scratch during the CMP planarization process.

In general, a USG film formed by a thermal CVD (Chemical Vapor Deposition) method has good embedding characteristics, but has a lower hardness than a USG film formed by a plasma CVD method. On the other hand, the USG film formed by the plasma CVD method has higher hardness than the USG film formed by the thermal CVD method, but the embedding characteristic is not good. For this reason, as shown in FIG. 4, the conventional interlayer insulating film 120 is an O layer formed by a normal pressure or quasi-atmospheric pressure CVD method (hereinafter referred to as a thermal CVD method) using heat with good filling characteristics. ₃ / TEOS (Tetraethyl orthosilicate) film (hereinafter referred to as thermal-USG film) 122 and a high hardness silicon oxide film (hereinafter referred to as P-USG film) 124 formed by plasma CVD method as an upper layer. It is common (see, for example, Patent Document 1). At this time, the upper P-USG film 124 is used as a film to be polished in the CMP polishing process. In addition, the USG film having a plurality of layers means that a plurality of USG films having different manufacturing methods are sequentially stacked.

JP 2006-41107 A

  As the miniaturization of the semiconductor device proceeds, the etching stopper layer under the interlayer insulating film becomes thinner. For this reason, in addition to the necessity of making the interlayer insulating film itself thin, it is necessary to reduce the variation in the film thickness of the interlayer insulating film after the CMP planarization process. For example, since there is a USG film formed by a plasma CVD method as a CMP polishing film in Patent Document 1, the in-plane distribution of the film thickness at the time of film formation by the plasma CVD method and the surface of the polishing amount at the CMP flattening process It is necessary to take into account the variation within. Therefore, when the interlayer insulating film is composed of a plurality of USG films, there is a problem that it is difficult to reduce the thickness and make the film thickness uniform.

  FIGS. 5-1 to 5-2 are diagrams for explaining problems in the case where the interlayer insulating film includes a plurality of layers. As shown in FIG. 5A, a thermal-USG film 122 having a thickness of 150 nm from the surface to the upper surface of the silicon substrate 101 is formed on the silicon substrate 101 on which the MOS transistor is formed. A P-USG film 124 is formed on the entire surface of the heat-USG film 122. The film thickness distribution of the formed P-USG film 124 is assumed to be 270 nm to 330 nm.

  It is assumed that a 50 nm P-USG film 124 is left even in the thinnest part after the CMP planarization process. In this case, the maximum polishing amount of the P-USG film 124 by CMP is 270 nm−50 nm = 220 nm considering that the thinnest part of the P-USG film 124 is 50 nm. Here, assuming that the variation in the polishing amount by CMP is about 180 to 220 nm, the thickest portion of the P-USG film 124 after the planarization process is the case where the polishing amount of CMP is the smallest at the thickest deposited position. Therefore, the film thickness is 330 nm-180 nm = 150 nm. Thus, due to the synergistic effect of the deposition of the P-USG film 124 and its polishing by CMP, the thickness of the P-USG film 124 after the CMP planarization process varies in the range of 50 to 150 nm. Due to such variations, it has been difficult to reduce the thickness of the interlayer insulating film 120 and make the film thickness distribution uniform.

  When the interlayer insulating film is composed of a plurality of layers as described above, it is difficult to reduce the thickness and make the film thickness uniform. Therefore, if the interlayer insulating film is a single layer, the above-described problem does not occur. become. For example, it is known that a high-temperature heat treatment is performed after the formation of the heat-USG film, thereby increasing the density of the heat-USG film and increasing the hardness. Therefore, it can be expected that this one-layer heat-USG film subjected to high temperature heat treatment is used as an interlayer insulating film.

  However, in recent years, new materials typified by nickel silicide used for substrate contacts have poor heat resistance, and there has been a problem that many heat treatments cannot be performed after the subsequent step of forming an interlayer insulating film. That is, a single layer of heat-USG film that has been heat-treated at a high temperature cannot be used in a semiconductor device in which a MOS transistor using a material such as nickel silicide is formed. As a result, a fragile heat-USG film formed at a low temperature is used, and there is a problem that scratches may occur due to the CMP planarization process.

The present invention has been made in view of the above, and in the formation of an interlayer insulating film of a semiconductor device in which the heat treatment temperature is limited by the material constituting the MOS transistor, it is possible to suppress the occurrence of scratches in the CMP planarization process. It is an object of the present invention to obtain a semiconductor device having an interlayer insulating film made of an O ₃ / TEOS-based thermal-USG film formed by a relatively low temperature process and a method for manufacturing the same.

  In order to achieve the above object, in a method of manufacturing a semiconductor device according to an embodiment of the present invention, a field effect transistor having a silicide layer on a source / drain region and / or a gate electrode is formed on a semiconductor substrate. First, a silicon oxide film into which impurities are not introduced is formed on a semiconductor substrate by a thermal CVD method. Thereafter, the gaseous reaction product mixed in the silicon oxide film is removed at a temperature that does not affect the silicide in the semiconductor substrate.

  According to one embodiment of the present invention, an inter-layer insulating film made of a tetraethyl silicate / ozone USG film (silicon oxide film) is formed by thermal CVD with good embedding characteristics, and then mixed into the USG film. Since the formed product reaction product is removed, the hardness of the interlayer insulating film can be increased in a short time without increasing the temperature of the entire semiconductor device.

  Exemplary embodiments of a semiconductor device and a manufacturing method thereof according to the present invention will be explained below in detail with reference to the accompanying drawings. Note that the present invention is not limited to these embodiments. The cross-sectional views of the semiconductor devices used in the following embodiments are schematic, and the relationship between the thickness and width of the layers, the ratio of the thicknesses of the layers, and the like are different from the actual ones.

Embodiment 1 FIG.
FIG. 1 is a diagram schematically showing a cross-sectional structure of a semiconductor device according to a first embodiment of the present invention. This semiconductor device has a structure in which a field effect transistor (hereinafter referred to as a MOS transistor) is formed at a predetermined position on a silicon substrate 1. In this MOS transistor, a gate structure 11 is formed at a predetermined position on the silicon substrate 1, and impurity atoms of a predetermined conductivity type are diffused on the surface of the silicon substrate 1 sandwiching a channel region below the gate structure 11. A diffusion layer 16 to be a source / drain region is formed, and a silicide film 17 made of nickel silicide or the like is further formed thereon. The gate structure 11 includes a laminated body having a predetermined shape comprising a gate insulating film 12 made of silicon oxide or the like on a silicon substrate 1, a gate electrode 13 made of polysilicon, and a silicide film 14 made of nickel silicide, and the like. And side walls 15 mainly made of a silicon nitride film, which are formed on both side surfaces in the line width direction of the body.

On the upper surface of the silicon substrate 1 on which the MOS transistor is formed, an etching stopper film 21 made of a silicon nitride film and a silicon oxide film in which impurities such as O ₃ / TEOS P and B are not artificially introduced ( Hereinafter, an interlayer insulating film 22 made of a USG film is formed in order. The interlayer insulating film 22 is formed by irradiating an O ₃ / TEOS-based USG film formed by a normal pressure or quasi-atmospheric pressure CVD method (hereinafter referred to as a thermal CVD method) with ultraviolet light. is there. On the interlayer insulating film 22, a first wiring is formed (not shown). That is, the interlayer insulating film 22 is characterized by comprising a single layer of O ₃ / TEOS-based USG film.

As will be described later, this O ₃ / TEOS-based USG film is formed using ozone and tetraethyl silicate (Si (OC ₂ H ₅ ) ₄ ) as a raw material by a thermal CVD method, and then irradiated with a predetermined ultraviolet ray. Do time. This ultraviolet light irradiation activates hydrogen groups and hydroxyl groups remaining in the USG film during the film formation process of the thermal CVD method, so that moisture (H ₂ O), CO ₂ , H ₂ can be obtained at a relatively low temperature and in a short time. Gaseous reaction products such as ₂ are desorbed. Then, a bond similar to a silicon-oxygen-silicon network structure is newly generated at the time of desorption, and the hardness of the USG film increases.

  Next, a method for manufacturing a semiconductor device according to the present invention will be described. FIGS. 2-1 to 2-6 are cross-sectional views schematically showing an example of the procedure of the semiconductor device manufacturing method according to the present invention. First, the silicon substrate 1 subjected to a predetermined process such as formation of an element isolation insulating film or well implantation is heat-treated in an atmosphere containing oxygen and moisture by a conventionally known method. As a result, the surface of the silicon substrate 1 is oxidized, and a silicon oxide film 12A is formed on the surface of the silicon substrate 1 (FIG. 2-1). Here, for example, an oxidation process is performed at a temperature of about 950 ° C. to form a silicon oxide film 12A of about 8 nm.

  Next, a polycrystalline silicon film is formed on the surface of the silicon oxide film 12A, and is patterned into a predetermined shape using a general photolithography technique and a plasma etching technique, thereby forming the gate electrode 13 (FIG. 2). 2). Here, the gate electrode 13 having a height of 180 nm is formed.

  Next, a silicon nitride film is formed on the entire surface of the silicon substrate 1 on which the gate electrode 13 is formed. Thereafter, the silicon nitride film on the upper surface of the gate electrode 13 and the surface of the silicon substrate 1 is etched and removed using a plasma etching technique. At this time, the silicon oxide film 12A other than the formation position of the gate electrode 13 is also removed until the surface of the silicon substrate 1 is exposed. As a result, sidewalls 15 are formed on both side surfaces of the gate electrode 13 in the line width direction, and a gate structure 11 including the gate insulating film 12, the gate electrode 13, and the sidewall 15 is formed at a predetermined position on the silicon substrate 1. Is done. Here, after a silicon nitride film having a thickness of 20 nm is formed by thermal CVD, general plasma etch back is performed. After that, using the gate structure 11 as a mask, an impurity of a predetermined conductivity type is ion-implanted into the surface of the silicon substrate 1 exposed between the adjacent gate structures 11 and activated to form a diffusion layer 16 to be a source / drain region. (FIGS. 2-3).

  Next, after forming a metal film such as nickel that forms silicide by reacting with silicon on the surface of the silicon substrate 1, heat treatment is performed to form silicide films 14 and 17 on the gate electrode 13 and the diffusion layer 16 (see FIG. Fig. 2-4). Here, nickel silicide is formed by depositing nickel to a thickness of 10 nm by a sputtering method and then performing heat treatment at 500 ° C.

  Thereafter, an etching stopper film 21 made of a silicon nitride film is formed so as to cover the gate structure 11 and the silicide film 14 on the silicon substrate 1. At this time, the etching stopper film 21 is formed to such an extent that the space between the gate structures 11 of the adjacent MOS transistors is not filled with the etching stopper film 21. Here, a silicon nitride film serving as an etching stopper film is formed to a thickness of 40 nm at 450 ° C. by plasma CVD. Next, an interlayer insulating film 23 made of a silicon oxide film (USG film) into which impurities such as B and P are not introduced is formed on the etching stopper film 21 by using thermal CVD and using ozone and normal tetraethyl silicate as raw materials. (Figure 2-5). Here, an 800 nm USG film is formed at 450 ° C. by thermal CVD using ozone and tetraethyl orthosilicate as raw materials.

  Next, the interlayer insulating film 23 is heated to a temperature that does not affect the characteristics of the silicide films 14 and 17, for example, when the silicide films 14 and 17 are nickel silicide films, while being heated to about 400 ° C. Is irradiated with ultraviolet light for 1 hour. As a result, gaseous reaction products mixed in the interlayer insulating film 23 during film formation by the thermal CVD method are removed and silicon-oxygen-silicon bonds are increased, so that the interlayer insulating film 22 with increased hardness is obtained. (Figure 2-6). The volume of the interlayer insulating film 22 contracts due to the increase in hardness due to the ultraviolet light irradiation.

  Thereafter, the interlayer insulating film 22 is polished by a CMP method so as to have a predetermined thickness and planarized by a conventionally known technique, whereby the semiconductor device shown in FIG. 1 is obtained. Although not shown here, a contact hole is opened in the interlayer insulating film 22 to form an upper wiring structure.

  According to the first embodiment, after the formation of the USG film by the thermal CVD method, the curing process of the USG film by ultraviolet light irradiation at a low temperature that does not affect the characteristics of the silicide film is included, so that it is vulnerable to heat. There is an effect that it is possible to form an interlayer insulating film that is resistant to scratches during CMP planarization without damaging the characteristics of a silicide film such as nickel silicide. Further, since the interlayer insulating film can be formed with only one layer of USG film by the thermal CVD method, unlike the conventional case of adding a silicon oxide film (P-USG film) by the plasma CVD method to the upper layer, the interlayer insulating film can be formed. It is possible to reduce the thickness of the insulating film and to easily open a contact hole in the next process.

Embodiment 2. FIG.
In the first embodiment, the gaseous reaction product in the USG film is removed by irradiating the USG film formed by the thermal CVD method with ultraviolet light at a low temperature that does not affect the characteristics of the silicide film. However, other treatment methods may be used as long as the gaseous reaction product in the USG film can be removed at a low temperature that does not affect the characteristics of the silicide film.

For example, after forming the interlayer insulating film 23 made of an O ₃ / TEOS-based USG film by the thermal CVD method in FIG. 2-5 of the first embodiment, the semiconductor device is placed in the vacuum chamber, and the inside of the vacuum chamber is low A reduced pressure heat treatment may be performed in which the heat treatment is performed at a low temperature that does not affect the characteristics of the silicide films 14 and 17 in a pressure state (vacuum). As a result, moisture in the USG film (interlayer insulating film 23 before the curing process) is removed, so that the hardness of the USG film (interlayer insulating film after the curing process) can be increased.

Further, after forming the interlayer insulating film 23 made of an O ₃ / TEOS-based USG film by the thermal CVD method in FIG. 2-5 of the first embodiment, it is low enough not to affect the characteristics of the silicide films 14 and 17. Plasma treatment may be performed in an atmosphere containing a gas that becomes an oxidizing agent such as oxygen at a temperature. As a result, not only moisture in the USG film (interlayer insulating film 23 before the curing process) but also gaseous reaction products such as CO ₂ and H ₂ can be removed.

According to the second embodiment, moisture in the O ₃ / TEOS-based USG film formed by thermal CVD can be removed by low-pressure heat treatment. In addition, by the plasma treatment in an atmosphere containing a gas serving as an oxidant, it is possible to remove moisture and gaseous reaction products such as CO2 and H2 from an O ₃ / TEOS-based USG film formed by a thermal CVD method. . As a result, the film hardness of the interlayer insulating film can be increased.

Embodiment 3 FIG.
In Embodiment 1, a gaseous reaction product in the USG film is formed by forming a USG film formed by thermal CVD at a time and then irradiating with ultraviolet light at a low temperature that does not affect the characteristics of the silicide film. Was removed. In this third embodiment, in order to increase the effect of ultraviolet light irradiation in the first embodiment, the reduced pressure heat treatment in the second embodiment, and the effect of plasma treatment in an atmosphere containing a gas that becomes an oxidizing agent, a USG film ( A method of dividing the interlayer insulating film) and performing the curing process of the USG film every time the film is formed will be described.

  FIGS. 3-1 to 3-4 are cross-sectional views schematically showing an example of the procedure of the third embodiment of the semiconductor device manufacturing method according to the present invention. As shown in FIG. 2-4, the steps up to forming the silicide films 14 and 17 on the gate electrode 13 and the diffusion layer 16 of the MOS transistor on the silicon substrate 1 are the same as those in the first embodiment. Therefore, the description is omitted.

  2-4, after forming silicide films 14 and 17 on the gate electrode 13 and the diffusion layer 16, the silicide film 14, the sidewall 15 on the gate electrode 13, and the silicide film on the diffusion layer 16 are formed. An etching stopper film 21 made of a silicon nitride film is formed so as to cover 17. Next, a first interlayer insulating film 23A made of a silicon oxide film (USG film) in which impurities such as B and P are not introduced on the etching stopper film 21 using ozone and normal tetraethyl silicate as raw materials by thermal CVD. Are formed with a thickness smaller than the final thickness of the interlayer insulating film (FIG. 3A).

  Next, the first interlayer insulating film 23A is irradiated with ultraviolet light for a predetermined time while heating the first interlayer insulating film 23A to a temperature that does not affect the characteristics of the silicide films 14 and 17, for example, about 400 ° C. To do. As a result, the gaseous reaction product mixed in the first interlayer insulating film 23A during film formation by the thermal CVD method is removed, and the number of silicon-oxygen-silicon bonds increases, so that the first interlayer having increased hardness is obtained. An insulating film 22A is obtained (FIG. 3-2).

  Thereafter, as shown in FIGS. 3-1 to 3-2, after depositing a USG film having a predetermined thickness, a process of irradiating ultraviolet light at a predetermined temperature is repeatedly performed, so that a predetermined amount as a whole is obtained. A thick interlayer insulating film is formed. FIG. 3C is a diagram showing a state in which the fourth interlayer insulating film 22D thus cured is formed and the fifth interlayer insulating film 23E before the curing process is formed thereon. . It is assumed that the first to fifth interlayer insulating films 23A to 23E are formed at a film thickness of 100 nm each time. Thereafter, the fifth interlayer insulating film 23E is irradiated with ultraviolet light at a predetermined temperature to form a cured interlayer insulating film 22E (FIG. 3-4). Thus, the formation of the interlayer insulating film is completed.

In the above description, the case of irradiating the O ₃ / TEOS-based USG film with ultraviolet light at a predetermined temperature is taken as an example of the curing treatment. However, as shown in the second embodiment, the interlayer insulating film The semiconductor device in which the semiconductor layer is formed may be subjected to heat treatment under reduced pressure, may be subjected to plasma treatment in an atmosphere containing a gas that serves as an oxidant, or may be subjected to heat treatment in an atmosphere with little moisture. In particular, it is particularly effective for a technique that is effective only in the vicinity of the surface of the film to be processed, such as curing by plasma treatment. Further, each film forming process and the curing process need not have the same contents, and different film thicknesses and processing methods may be combined. Further, in the above description, the formation of the interlayer insulating film formed on the MOS transistor is described as the object of the curing process. However, if the structure requires heat resistance in the process of forming the interlayer insulating film, Similarly, an interlayer insulating film other than the interlayer insulating film formed in the above is effective.

  Further, in this example, the case where the interlayer insulating film is formed in five times is shown, but all of the first to fifth interlayer insulating films formed each time are formed by the thermal CVD method. Since it is an O3 / TEOS-based USG film, the finally formed interlayer insulating film can be regarded as a single layer structure. That is, when an interlayer insulating film formed by the same manufacturing method and having the same composition is formed by laminating a plurality of layers, the composition is the same, and therefore, it is regarded as a single layer componentally. .

According to the third embodiment, since the formation of the one-layer interlayer insulating film is performed in a plurality of times, the thickness of the interlayer insulating film can be reduced each time. As a result, the removal of the gaseous reaction product contained in the O ₃ / TEOS-based USG film forming the interlayer insulating film can be performed more efficiently than in the first and second embodiments. Have

  As described above, the semiconductor device according to the present invention is useful for a semiconductor device having an interlayer insulating film that electrically insulates a lower layer wiring and an upper layer wiring.

It is a figure which shows typically the cross-section of Embodiment 1 of the semiconductor device by this invention. It is sectional drawing which shows typically an example of the procedure of the manufacturing method of the semiconductor device by this invention (the 1). It is sectional drawing which shows typically an example of the procedure of the manufacturing method of the semiconductor device by this invention (the 2). It is sectional drawing which shows typically an example of the procedure of the manufacturing method of the semiconductor device by this invention (the 3). It is sectional drawing which shows typically an example of the procedure of the manufacturing method of the semiconductor device by this invention (the 4). It is sectional drawing which shows typically an example of the procedure of the manufacturing method of the semiconductor device by this invention (the 5). It is sectional drawing which shows typically an example of the procedure of the manufacturing method of the semiconductor device by this invention (the 6). It is sectional drawing which shows typically an example of the procedure of Embodiment 3 of the manufacturing method of the semiconductor device by this invention (the 1). It is sectional drawing which shows typically an example of the procedure of Embodiment 3 of the manufacturing method of the semiconductor device by this invention (the 2). It is sectional drawing which shows typically an example of the procedure of Embodiment 3 of the manufacturing method of the semiconductor device by this invention (the 3). It is sectional drawing which shows typically an example of the procedure of Embodiment 3 of the manufacturing method of the semiconductor device by this invention (the 4). It is a figure which shows typically the cross-sectional structure of the semiconductor device with which the conventional interlayer insulation film is comprised by the two-layer USG film. It is a figure for demonstrating a problem in case an interlayer insulation film consists of multiple layers. It is a figure for demonstrating a problem in case an interlayer insulation film consists of multiple layers.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon substrate 11 Gate structure 12 Gate insulating film 13 Gate electrode 14, 17 Silicide film 15 Side wall 16 Diffusion layer 21 Etching stopper film 22, 22A-22E Interlayer insulation film 23, 23A, 23E after hardening process Interlayer before hardening process Insulation film

Claims (10)

Silicon for forming a silicon oxide film into which impurities are not introduced by a thermal CVD method on a semiconductor substrate on which a field effect transistor having a silicide layer on a source / drain region and / or gate electrode is formed on a semiconductor substrate An oxide film forming step;
A silicon oxide film curing step for removing gaseous reaction products mixed in the silicon oxide film in the silicon oxide film formation step at a temperature that does not affect the silicide;
A method for manufacturing a semiconductor device, comprising:   2. The method of manufacturing a semiconductor device according to claim 1, wherein, in the silicon oxide film curing step, the silicon oxide film is irradiated with ultraviolet light to remove the gaseous reaction product from the silicon oxide film. .   2. The semiconductor device according to claim 1, wherein in the silicon oxide film curing step, the semiconductor device on which the silicon oxide film is formed is heat-treated in a vacuum at a temperature that does not affect the silicide. 3. Manufacturing method.   In the silicon oxide film curing step, the semiconductor device on which the silicon oxide film is formed is subjected to plasma treatment at a temperature that does not affect the silicide in an atmosphere containing a gas serving as an oxidizing agent. A method for manufacturing a semiconductor device according to claim 1.   5. The interlayer insulating film is formed by a thermal CVD method using an oxidizing agent and tetraethyl silicate as raw materials in the silicon oxide film curing step. 6. A method for manufacturing a semiconductor device. In the silicon oxide film forming step, the silicon oxide film is formed with a thickness thinner than the final interlayer insulating film,
6. The silicon oxide film forming step and the silicon oxide film curing step are repeatedly executed until the thickness of the silicon oxide film reaches the final thickness of the interlayer insulating film. A method for manufacturing a semiconductor device according to claim 1. A semiconductor substrate having a field effect transistor having a silicide layer on a source / drain region and / or gate electrode formed on a semiconductor substrate;
An interlayer insulating film made of a single-layer silicon oxide film not doped with impurities formed on the semiconductor substrate;
A semiconductor device comprising:   8. The semiconductor device according to claim 7, wherein the interlayer insulating film is made of a silicon oxide film formed by a thermal CVD method using an oxidizing agent and tetraethyl silicate as raw materials.   9. The semiconductor device according to claim 7, wherein the interlayer insulating film is a silicon oxide film that has been subjected to a curing process.   A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 1.

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