JP2008200758A5 - - Google Patents

Claims (6)

A MEMS structure;
A movable electrode provided in the MEMS structure;
A floating gate that forms a capacitance with the movable electrode;
And a drive electrode that forms a capacitance with the movable electrode . The MEMS device according to claim 1,
In the MEMS structure, one end of the movable electrode is fixed to a semiconductor substrate via a base ,
The drive electrode is disposed to face the other end of the movable electrode,
The MEMS element according to claim 1, wherein the floating gate is disposed to face the movable electrode between one end of the movable electrode and the other end of the movable electrode. The MEMS device according to claim 1,
  In the MEMS structure, one end of the movable electrode is fixed to a semiconductor substrate via a base,
  The MEMS element according to claim 1, wherein the floating gate is disposed opposite to the other end of the movable electrode. The MEMS device according to claim 2 or 3 , wherein
The MEMS element, wherein the floating gate is connected via a gate wiring formed on the semiconductor substrate and a tunnel oxide film . The MEMS device according to claim 4, wherein
A MEMS element, wherein a gate region in which the floating gate and the gate wiring are connected by the tunnel oxide film and a region on the semiconductor substrate on which the movable electrode is formed are different in a plan view . A method of manufacturing a MEMS device comprising a MEMS structure and a floating gate,
Introducing N-type impurities into the semiconductor substrate, and the N ⁺ diffusion layer forming step of forming an N ⁺ diffusion layer on the gate line and the gate region,
An insulating film forming step of forming a silicon oxide film on the surface of the semiconductor substrate on which the N ⁺ diffusion layer is formed;
An etching stopper film forming step of forming a silicon nitride film by masking the gate region on the surface of the silicon oxide film;
Etching the silicon oxide film in the gate region to expose the N ⁺ diffusion layer;
A tunnel oxide film forming step of forming a tunnel oxide film on the exposed N ⁺ diffusion layer;
Forming a floating gate and the like for forming the substructure of the MEMS structure and the floating gate;
A sacrificial layer forming step of forming a sacrificial layer on the lower structure and the floating gate;
An upper structure forming step of forming an upper structure of the MEMS structure;
And a sacrificial layer removing step of removing the sacrificial layer by etching.