JP2008200757A5 - - Google Patents
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- JP2008200757A5 JP2008200757A5 JP2007035825A JP2007035825A JP2008200757A5 JP 2008200757 A5 JP2008200757 A5 JP 2008200757A5 JP 2007035825 A JP2007035825 A JP 2007035825A JP 2007035825 A JP2007035825 A JP 2007035825A JP 2008200757 A5 JP2008200757 A5 JP 2008200757A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- region
- maximum
- movable portion
- mems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 18
- 239000012535 impurity Substances 0.000 claims 7
- 238000006073 displacement reaction Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Claims (4)
前記ＭＥＭＳ構造体は、可動部と前記半導体基板に固定されている基部とを有し、
前記可動部は、前記半導体基板方向への変位量が最大の部分を含む最大可動部と、
前記基部と前記最大可動部との中間位置にある中間可動部とを備え、
前記半導体基板の前記最大可動部に対向する領域のＮ型不純物濃度は、前記半導体基板の前記中間可動部に対向する領域のＮ型不純物濃度と比較して高く、
前記最大可動部と前記半導体基板との間の距離をｄ１、
前記中間可動部と前記半導体基板との間の距離をｄ２とすると、
ｄ２＜ｄ１の関係であることを特徴とするＭＥＭＳ素子。 A MEMS device comprising a semiconductor substrate and a MEMS structure ,
The MEMS structure has a movable part and a base fixed to the semiconductor substrate;
The movable portion includes a maximum movable portion including a portion having a maximum amount of displacement in the semiconductor substrate direction,
An intermediate movable part at an intermediate position between the base and the maximum movable part;
The N-type impurity concentration of the region facing the maximum movable portion of the semiconductor substrate is higher than the N-type impurity concentration of the region facing the intermediate movable portion of the semiconductor substrate ,
The distance between the maximum movable part and the semiconductor substrate is d1,
When the distance between the intermediate movable portion and the semiconductor substrate is d2,
A MEMS element having a relationship of d2 <d1 .
前記半導体基板にＮ型不純物を導入することによって、前記ＭＥＭＳ構造体の前記半導体基板方向の変位量が最大の部分を含む最大可動部に対向する前記半導体基板の領域のＮ型不純物濃度を、前記基部と前記最大可動部との中間位置にある中間可動部に対向する前記半導体基板の領域のＮ型不純物濃度と比較して高くする不純物領域形成工程と、
熱酸化によって前記半導体基板に犠牲層を形成する犠牲層形成工程と、
前記ＭＥＭＳ構造体を前記犠牲層上に形成する工程と、
ウェットエッチング法によって前記犠牲層を除去する工程とを含むことを特徴とするＭＥＭＳ素子の製造方法。 A method for manufacturing a MEMS device comprising a semiconductor substrate and a MEMS structure having a base fixed to the semiconductor substrate ,
By introducing an N-type impurity into the semiconductor substrate, the N-type impurity concentration in the region of the semiconductor substrate facing the maximum movable portion including the portion where the displacement amount of the MEMS structure in the semiconductor substrate direction is maximum is obtained. An impurity region forming step for increasing the N-type impurity concentration in the region of the semiconductor substrate facing the intermediate movable portion located at an intermediate position between the base and the maximum movable portion;
A sacrificial layer forming step of forming a sacrificial layer on the semiconductor substrate by thermal oxidation;
Forming the MEMS structure on the sacrificial layer;
And a step of removing the sacrificial layer by a wet etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007035825A JP2008200757A (en) | 2007-02-16 | 2007-02-16 | Mems element, and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007035825A JP2008200757A (en) | 2007-02-16 | 2007-02-16 | Mems element, and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008200757A JP2008200757A (en) | 2008-09-04 |
| JP2008200757A5 true JP2008200757A5 (en) | 2010-04-02 |
Family
ID=39778770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007035825A Pending JP2008200757A (en) | 2007-02-16 | 2007-02-16 | Mems element, and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008200757A (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08172128A (en) * | 1994-12-16 | 1996-07-02 | Fujitsu Ltd | Semiconductor device and its manufacture |
| JP2006095632A (en) * | 2004-09-29 | 2006-04-13 | Seiko Epson Corp | Manufacturing method of mems element and mems element |
| JP4431030B2 (en) * | 2004-12-20 | 2010-03-10 | シャープ株式会社 | Micro contact switch and wireless communication equipment |
| JP4645227B2 (en) * | 2005-02-28 | 2011-03-09 | セイコーエプソン株式会社 | Vibrator structure and manufacturing method thereof |
-
2007
- 2007-02-16 JP JP2007035825A patent/JP2008200757A/en active Pending
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