JP2008198648A - X-ray imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an X-ray imaging apparatus which can obtain a high definition X-ray image by preventing the occurrence of strain on the boundary of layers of different materials. <P>SOLUTION: The X-ray imaging apparatus comprises a phosphor film 102, a photoelectric conversion part 103 provided on the phosphor film 102, an insulating film 301 provided on the surface of the photoelectric conversion part 103 opposing the surface on which the phosphor film 102 is provided, a plurality of switching elements 402 provided through the insulating film 301 in correspondence with a plurality of pixels arranged in array on the photoelectric conversion part 103, and a pixel electrode 502 for connecting the switching element 402 and the photoelectric conversion part 103 electrically through a contact hole 304 provided in the insulating film 301. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an X-ray imaging apparatus used in a medical X-ray diagnostic apparatus or the like.

  In recent years, in the medical field, the medical data of a patient has been moved to a database for the purpose of prompt and accurate treatment, and digitization of the image data is required also in X-ray imaging. Therefore, recently, an X-ray imaging apparatus using a thin film transistor array has been developed.

  Conventionally, in such an X-ray imaging apparatus, an X-ray charge conversion film is used as an X-ray charge conversion unit, and a direct conversion type that directly converts an X-ray into an electric signal (charge) Two types of indirect conversion types are known in which the phosphor is once converted into visible light, and the visible light is converted into electric charge by a photoelectric conversion film. In these two systems, basically, the same structure is used for the readout section of the electrical signal. That is, an X-ray imaging apparatus arranges unit pixels composed of thin film transistors (hereinafter referred to as TFTs) in an array, collects charges generated directly or indirectly by X-rays by pixel electrodes, and stores TFTs. It is an apparatus that reads out this electric charge and obtains an image by sequentially driving it.

  In such an X-ray imaging apparatus, a TFT array substrate is conventionally manufactured first, and a chemical vapor deposition (CVD) method or a physical vapor deposition (PVD) method is used on the TFT array substrate. Although the X-ray charge conversion film has been grown, the TFT array substrate has irregularities on the TFT and the wiring portion. Therefore, when the X-ray electric conversion film is formed at such a step, the step There was a problem that the characteristics deteriorated at that portion due to the influence of the above.

As a method for solving such a problem, an X-ray charge conversion film made of a common electrode and a CdTe film is formed on a glass substrate, and a TFT, a pixel capacitor, and a protective film are formed on the CdTe film. A manufacturing method of a direct conversion type two-dimensional X-ray sensor that forms each in the following order is disclosed (for example, Patent Document 1).
JP 2001-291854 A

  As described above, the technique described in Patent Document 1 has an effect that the X-ray charge conversion film can be formed on a flat and uniform surface.

  However, in the X-ray charge conversion film used for the direct conversion type, the pixel electrode for detecting the converted charge needs to be in direct contact with the X-ray charge conversion film. In this case, the pixel electrode is not uniformly formed on the entire surface of the X-ray charge conversion film. For example, as illustrated in Patent Document 1, via a contact hole provided in a substrate or an insulating film. The structure is electrically connected. For this reason, the X-ray charge conversion film inevitably comes into contact with two or more layers of different materials on the surface thereof. For this reason, the X-ray charge conversion film is slightly distorted at a portion located on the boundary between layers made of different materials. The presence of this distortion leads to deterioration of the characteristics of the X-ray charge conversion film, and there is a limit in obtaining a high-quality X-ray image.

  Therefore, an object of the present invention is to provide an X-ray imaging apparatus capable of preventing the occurrence of distortion on the boundary between layers made of different materials and obtaining a high-quality X-ray image.

  An X-ray imaging apparatus according to the present invention includes a phosphor film that converts incident X-rays into light, and a photoelectric conversion unit that is provided on the phosphor film and converts light converted by the phosphor film into charges. An insulating film provided on the photoelectric conversion unit, a plurality of switching elements provided corresponding to each of a plurality of pixels arranged in an array on the insulating film, and provided on the insulating film And a pixel electrode that electrically connects the switching element and the photoelectric conversion unit through a contact hole.

  ADVANTAGE OF THE INVENTION According to this invention, the generation | occurrence | production of the distortion on the boundary of the layer from which a material differs is prevented, and the X-ray imaging device which can obtain a high quality X-ray image is provided.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description of the drawings, the same portions are denoted by the same reference numerals, and overlapping descriptions are omitted. The drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Further, there are included portions having different dimensional relationships and ratios between the drawings.

(First embodiment)
FIG. 1 is a plan circuit diagram of the X-ray imaging apparatus according to the first embodiment.

  As shown in FIG. 1, the X-ray imaging apparatus according to the present embodiment includes a plurality of pixels ei. j (i, j = 1, 2,...). Each pixel ei. j includes an X-ray charge conversion unit 210 and a switching TFT (hereinafter simply referred to as a TFT) 402.

  A negative bias voltage is applied to the X-ray charge conversion unit 210 by the power source 109. The TFT 402 is connected to the signal line 408 and the scanning line 606, and ON / OFF is controlled by the scanning line driving circuit 607. The end of the signal line 408 is connected to the shift register 608 through the amplifier 310.

  2 is a plan view of the X-ray imaging apparatus in one pixel according to the first embodiment, and FIG. 3 is a cross-sectional view in the AA direction in FIG.

  As shown in FIGS. 2 and 3, the X-ray imaging apparatus according to this embodiment includes a metal reflection film 101, a phosphor film 102 provided on the metal reflection film 101, and converts incident X-rays into light. The transparent electrode 204 provided on the surface of the phosphor film 102 that faces the surface on which the metal reflective film 101 is provided, and the surface of the transparent electrode 204 that faces the surface on which the phosphor film 102 is provided. A photoelectric conversion unit 103 that converts light converted by the body film 102 into electric charges; a TFT 402 that is provided on the photoelectric conversion unit 103 and that sequentially outputs charges generated by the photoelectric conversion unit 103 to the signal line 408; and provided on the TFT 402. A passivation layer 306 provided; an adhesive layer 307 provided on the passivation layer 306; and a support substrate 308 provided on the adhesive layer 307.

  For the metal reflective film 101, for example, Al or the like is preferably used.

Phosphor film 102 is, for _{example, Gd 2 o 2 S: Tb} , CsI, ZnS, Y x Gd 2-x O 3, CdWO 4 or the like is preferably used.

  For the transparent electrode 204, for example, ITO or the like is preferably used.

  The photoelectric conversion unit 103 includes a p-type conductive amorphous silicon layer (hereinafter referred to as a p-type a-Si layer) 205 provided on a surface of the transparent electrode 204 facing the surface on which the phosphor film 102 is provided. , An amorphous silicon layer (hereinafter referred to as i-type a-Si layer) 206 having i-type conductivity provided on a surface of the p-type a-Si layer 205 opposite to the surface provided with the transparent electrode 204; N-type conductive amorphous silicon layer (hereinafter referred to as n-type a-Si layer) provided in a region near the surface of the surface of the type a-Si layer 206 opposite to the surface provided with the p-type a-Si layer 205 207).

  An insulating film 301 is formed on the surface vicinity region where the n-type a-Si layer 207 of the photoelectric conversion unit 103 is provided. The insulating film 301 is made of, for example, silicon oxide (SiOx) or silicon nitride (SiNx), or a stacked body of silicon oxide (SiOx) and silicon nitride (SiNx).

  Further, the gate electrode 11 of the TFT 402 and the scanning line 606 are formed on the insulating film 301. The gate electrode 11 and the scanning line 606 are selected from, for example, molybdenum-tantalum (MoTa), tantalum (Ta), tantalum nitride (TaNx), aluminum (Al), Al alloy, copper (Cu), and molybdenum-tungsten (MoW). Or two layers of tantalum (Ta) and tantalum nitride (TaNx). The gate electrode 11 and the scanning line 606 have a convex shape upward in the drawing in the drawing.

  An insulating film 302 is formed on the gate electrode 11 and the scanning line 606 of the TFT 402.

The insulating film 302 is made of, for example, silicon oxide (SiOx) or silicon nitride (SiNx), or a stacked body of silicon oxide (SiOx) and silicon nitride (SiNx).

  An i-type a-Si layer 14 serving as a back gate region of the TFT 402 is formed on the gate electrode 11 with the insulating film 302 interposed therebetween. The i-type a-Si layer 14 has a convex shape reflecting the shape of the gate electrode 11. The insulating film 302 provided between the i-type a-Si layer 14 and the gate electrode 11 functions as a so-called gate insulating film.

A source / drain region of the TFT 402 is defined on the gate electrode 11 via the insulating film 302 and the i-type a-Si layer 14, that is, on the convex shape of the i-type a-Si layer 14. A stopper 16 made of silicon nitride is formed. Further, an amorphous silicon layer (hereinafter referred to as an n ⁺ a-Si layer) 18 doped with high-concentration n-type impurities is formed on the i-type a-Si layer 14 and becomes a source / drain region of the TFT 402. ing. The n ⁺ a-Si layer 18 constitutes a source / drain region by the stopper 16 and an opening formed immediately above the stopper 16.

An auxiliary electrode (pixel electrode) 502 and a signal line 408 are formed on the n ⁺ a-Si layer 18 and the insulating film 301. In the source region of the TFT 402, the signal line 408, the auxiliary electrode 502, and the n ⁺ a-Si layer 18 are electrically connected. The auxiliary electrode 502 has the same layer as the signal line 408 and the source / drain of the TFT 402 due to its structure. Further, the auxiliary electrode 502 constituting the drain region of the TFT 402 is electrically connected to the n-type a-Si layer 207 of the photoelectric conversion unit 103 through a contact hole 304 provided in the insulating film 301. The auxiliary electrode 502 and the signal line 408 are composed of, for example, a laminate of Mo and Al.

  A passivation layer 306 is formed on the auxiliary electrode 502 to protect the TFT 402, the auxiliary electrode 502 and the signal line 408. The passivation layer 306 is made of, for example, silicon oxide (SiOx) or silicon nitride (SiNx), or a stacked body of silicon oxide (SiOx) and silicon nitride (SiNx).

  An adhesive layer 307 is formed on the passivation layer 306, and a support substrate 308 is further provided via the adhesive layer 307. The adhesive layer 307 is composed of, for example, a laminate of silicon nitride and an acrylic organic resin film. An organic film such as BCB or PI (polyimide) may be used instead of the acrylic resin. These organic films preferably have a heat resistant temperature of 200 ° C. or higher. The heat resistant temperature means a temperature at which thermal decomposition occurs. The support substrate 308 is made of, for example, glass. Note that the support substrate 308 is more preferably made of a resin. In the case where the supporting substrate 308 is made of resin, it is preferable because it can be made lighter than glass.

  A power source (not shown) is connected between the auxiliary electrode 502 constituting the drain region of the TFT 402 and the transparent electrode 204, and an electric field is applied between the auxiliary electrode 502 and the transparent electrode 204 by applying a voltage to this power source. Give rise to

  When X-rays enter the X-ray imaging apparatus having the above configuration from the metal reflective film 101 side, the X-rays are transmitted through the metal reflective film 101 and converted into light (for example, visible light) by the phosphor film 102. The converted light is transmitted through the transparent electrode 204, or reflected by the metal reflection film 101 and transmitted through the transparent electrode 204, and enters the photoelectric conversion unit 103. When light enters the photoelectric conversion unit 103, holes and electrons are generated in the photoelectric conversion unit 103. At this time, electrons are temporarily stored in an i-type a-Si layer 206 provided between the p-type a-Si layer 205 and the n-type a-Si layer 207. Thereafter, when the scanning line 606 is driven by the scanning line driving circuit 607 and one column of TFTs 402 connected to one scanning line 606 is turned on, the signal charges accumulated in the i-type a-Si layer 206 are transferred to the signal line. 408 is sent to amplifier 310 where it is amplified. The amplified signal charges are sequentially read out by the shift register 608 and output to the outside. Note that the amount of charge varies depending on the amount of X-rays input to the pixel, and the output amplitude of the amplifier 310 changes, which corresponds to luminance. As a configuration of the present embodiment, the phosphor film 102 and the photoelectric charge converter 103 are collectively referred to as the incident X-rays being indirectly converted into charges, and this part is referred to as the X-ray charge converter 210. Define.

  As described above, in the X-ray imaging apparatus according to the present embodiment, the X-ray charge conversion unit that has been conventionally provided on the TFT is arranged in a direction opposite to the direction in which the TFTs are stacked via the flat insulating film. Since it is arranged on the surface (hereinafter referred to as the back surface), it does not suffer from deterioration of characteristics due to the influence of steps such as the unevenness of the TFT and the wiring portion. Further, a photoelectric conversion portion made of a-Si is provided on the back surface of the TFT, and the portion where the photoelectric conversion portion and the auxiliary electrode are in electrical contact is constituted by a buried impurity diffusion layer. In the portion, the influence of the portion where the material of the insulating film and the auxiliary electrode is different is reduced, and deterioration as the X-ray charge conversion portion is prevented. Furthermore, since the phosphor film provided on the photoelectric conversion unit is also arranged on the flat photoelectric conversion unit, the influence is further reduced. Therefore, it is possible to prevent the occurrence of distortion near the boundary between layers of different materials in the X-ray charge conversion unit, and it is possible to obtain a higher quality X-ray image.

  As described above, the X-ray imaging apparatus according to the first embodiment described above is not provided with any special electrode, wiring, or the like as a storage capacitor. That is, in the X-ray imaging apparatus according to the present embodiment, the photoelectric conversion unit 103 has a photoelectric conversion function, and further, the p-type a-Si layer 205, the n-type a-Si layer 207 of the photoelectric conversion unit 103, and The portion A of the i-type a-Si layer 206 provided between them has a function as a storage capacitor.

  Hereinafter, a method for manufacturing the X-ray imaging apparatus according to the present embodiment will be described with reference to FIGS.

  First, a glass substrate 309 is prepared (FIG. 4A), and a p-type a-Si layer 205 is formed on the glass substrate 309 by a CVD method (FIG. 4B). Next, an i-type a-Si layer 206 is formed on the p-type a-Si layer 205 by a CVD method (FIG. 4C). Next, phosphorus (P) is selectively ion-implanted into the surface of the i-type a-Si layer 206 using the photoresist pattern as a mask to form an n-type a-Si layer 207 (FIG. 4D). .

  Next, a SiOx film 301 is formed on the i-type a-Si layer 206 including the n-type a-Si layer 207 by a CVD method, and molybdenum-tantalum (MoTa) and tantalum (Mo) are further formed on the SiOx film 301. One layer selected from Ta), tantalum nitride (TaNx), aluminum (Al), Al alloy, copper (Cu), molybdenum-tungsten (MoW), or two layers of tantalum (Ta) and tantalum nitride (TaNx) The gate electrode 11 of the TFT 402 is formed by depositing and patterning by etching (FIG. 5A). At this time, the cross section of the gate electrode 11 is etched into a forward tapered shape. Next, a part of the SiOx film 301 is removed by PEP (Photo-Engraving Process) to form a contact hole 304 exposing the surface of the n-type a-Si layer 207 (FIG. 5B).

  Next, an insulating film is formed by stacking silicon oxide (SiOx), for example, 300 nm and silicon nitride (SiNx), for example, 50 nm on the gate electrode 11 by plasma CVD, and further, by plasma CVD. Amorphous Si having i-type conductivity is formed to 100 nm, for example, and silicon nitride (SiNx) is formed to 200 nm, for example, on the amorphous Si. Then, these are patterned according to the gate electrode 11 by a backside exposure method to form the island-shaped gate insulating film 302, the i-type a-Si layer 14, and the stopper layer 16 (FIG. 5C).

  Next, after depositing, for example, 50 nm of amorphous silicon doped with high-concentration n-type impurities on the i-type a-Si layer 14 by etching, it is etched to match the shape of the transistor. Then, the island-shaped n + a-Si layer 18 is formed. Thereafter, in the SiOx film 301 including the n + a-Si layer 18 and the contact hole 304, Mo is sputtered to a thickness of, for example, 50 nm, Al, for example, 350 nm, and Mo to a thickness of, for example, about 20 nm to 50 nm. By laminating and patterning by the method, the auxiliary electrode 502, the signal line 408, the source, the drain, and other wirings (not shown) are formed, whereby the TFT 402 is formed. Next, a passivation layer 306 made of, for example, SiNx is deposited with a thickness of, for example, 200 nm by CVD (FIG. 6A), and then an adhesive is applied to form an adhesive layer 307. (FIG. 6B).

  Next, a support substrate 308 made of, for example, glass, metal, plastic, or the like is bonded onto the adhesive layer 307 (FIG. 7A). Next, the glass substrate 309 is removed by etching with a hydrofluoric acid aqueous solution (FIG. 7B). At this time, the support substrate 308 bonded onto the adhesive layer 307 is coated and protected with a photoresist or the like so as not to be etched.

  Finally, an ITO film having a thickness of about 100 nm is formed on the surface (on the p-type a-Si layer 205) from which the glass substrate 309 has been removed by sputtering using an ITO (Indium Tin Oxide) target. Form. Further, by forming the phosphor film 102 on the ITO electrode 204 and the metal reflective film 101 on the phosphor film 102, the X-ray imaging apparatus shown in FIG. 3 is manufactured.

(Second Embodiment)
FIG. 8 is a plan circuit diagram of the X-ray imaging apparatus according to the second embodiment.

  As shown in FIG. 8, the X-ray imaging apparatus according to this embodiment is different from the first embodiment in that a storage capacitor 404 is provided. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  FIG. 9 is a plan view of the X-ray imaging apparatus in one pixel according to the second embodiment, and FIG. 10 is a cross-sectional view in the BB direction in FIG.

  As shown in FIGS. 9 and 10, the X-ray imaging apparatus according to the present embodiment is a position where the TFT 402 of the contact hole 304 is newly provided in the configuration of the X-ray imaging apparatus of the first embodiment described above. The electrode 31 and the storage capacitor line 35 provided on the insulating film 301 at a position opposite to each other are provided. The electrode 31, the n-type a-Si layer 207, and the insulating film 301 provided therebetween are provided. A storage capacity 404 is configured.

  The electrode 31 and the storage capacitor line 35 of the storage capacitor 404 can be formed by patterning simultaneously with the formation of the gate electrode 11 in the step described with reference to FIG. 5A of the first embodiment. (FIG. 11).

  As described above, the X-ray imaging apparatus according to the present embodiment is newly provided with the storage capacitor 404 in addition to the configuration of the first embodiment. Therefore, the portion functioning as the storage capacitor includes two portions, the portion A in FIG. 3 and the storage capacitor 404 described above. Since it has such a configuration, the X-ray imaging apparatus according to the present embodiment can accumulate more electric charges, can increase the X-ray captured image, and can generate excessive X-rays. Even when a large amount of signal charge is generated due to incidence, it is possible to provide an X-ray imaging apparatus with excellent durability that can reduce the influence of damage, heat generation, etc. between layers in the photoelectric conversion unit 103.

(Third embodiment)
FIG. 12 is a cross-sectional view of an X-ray imaging apparatus according to the third embodiment. FIG. 2 is adopted as a plan view of the X-ray imaging apparatus. Therefore, the plan view of the X-ray imaging apparatus in this embodiment is omitted.

  As shown in FIG. 12, the X-ray imaging apparatus according to the present embodiment has an i-type a-Si layer 206 and an n-type a-Si layer 207 between adjacent pixels (in FIG. ) Is removed by etching, and an insulating film 301 is buried in this portion. That is, the photoelectric conversion unit 103 is different from the first embodiment in that a separation layer 301A for separating pixels is provided. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  The separation layer 301A is formed between the adjacent pixels of the i-type a-Si layer 206 and the n-type a-Si layer 207 (in FIG. 12) after the process described in FIG. 4D of the first embodiment. Then, a part of both ends in the horizontal direction on the paper surface is removed by etching (FIG. 13A), and then the separation layer 301A and the i-type a-Si layer 206 including the n-type a-Si layer 207 are formed on the i-type a-Si layer 206 by the CVD method. The insulating film 301 is formed, and the process (formation of the gate electrode 11) described with reference to FIG.

  As described above, since the X-ray imaging apparatus according to the present embodiment newly includes the separation layer 301A between the pixels of the photoelectric conversion unit 103 in addition to the configuration of the first embodiment, It is possible to provide a high-quality X-ray imaging apparatus that can prevent a horizontal leakage current therebetween.

(Fourth embodiment)
FIG. 14 is a cross-sectional view of an X-ray imaging apparatus according to the fourth embodiment. FIG. 2 is adopted as a plan view of the X-ray imaging apparatus. Therefore, the plan view of the X-ray imaging apparatus in this embodiment is omitted.

  As shown in FIG. 14, the X-ray imaging apparatus according to the present embodiment includes a p-type a-Si layer 205, an i-type a-Si layer 206, and an n-type a-Si layer 207 between adjacent pixels (see FIG. 14 is partially etched away, and an insulating film 301 is embedded in this portion. That is, the present embodiment is different from the first embodiment in that the photoelectric conversion unit 103 is provided with a separation layer 301B that completely separates pixels. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  The separation layer 301B is formed adjacent to the p-type a-Si layer 205, the i-type a-Si layer 206, and the n-type a-Si layer 207 after the process described with reference to FIG. 4D of the first embodiment. 14 (FIG. 14A) is removed by etching (FIG. 14A), and then separated on the n-type a-Si layer 207 including the glass substrate 309 by the CVD method. The layer 301B and the insulating film 301 are formed, and the process (formation of the gate electrode 11) described in FIG. 5A of the first embodiment may be performed.

  As described above, in the X-ray imaging apparatus according to the present embodiment, in addition to the configuration of the first embodiment, the separation layer 301 </ b> B is provided between the pixels of the photoelectric conversion unit 103 as in the third embodiment. Since the photoelectric conversion unit 103 is completely separated between the pixels, it is possible to provide a high-quality X-ray imaging apparatus that can prevent a lateral leakage current between the pixels.

(Other embodiments)
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. For example, the photoelectric conversion unit 103 has been described with the p-i-n structure of the p-type a-Si layer 205, the i-type a-Si layer 206, and the n-type a-Si layer 207 in each of the above embodiments. , N-i-p structure. Further, although the TFT 402 is described as an example of a-Si, it may be formed of poly-Si or single crystal Si. Further, as the passivation layer, the stopper layer, and the insulating film, polyimides, benzocyclobutene (BCB), black resist, or the like may be used in addition to SiOx, SiNx, and the like.

  Further, the storage capacitor 404 described in the second embodiment described above may be combined with the configurations of the third and fourth embodiments.

Planar circuit diagram of an X-ray imaging apparatus according to the first embodiment The top view of the X-ray imaging device in 1 pixel which concerns on 1st Embodiment Sectional drawing which concerns on the AA direction in FIG. Sectional drawing for demonstrating the manufacturing method of the X-ray imaging device which concerns on 1st Embodiment. Sectional drawing for demonstrating the manufacturing method of the X-ray imaging device which concerns on 1st Embodiment. Sectional drawing for demonstrating the manufacturing method of the X-ray imaging device which concerns on 1st Embodiment. Sectional drawing for demonstrating the manufacturing method of the X-ray imaging device which concerns on 1st Embodiment. Planar circuit diagram of an X-ray imaging apparatus according to the second embodiment The top view of the X-ray imaging device in 1 pixel which concerns on 2nd Embodiment Sectional drawing which concerns on the BB direction in FIG. Sectional drawing for demonstrating the manufacturing method of the X-ray imaging device which concerns on 2nd Embodiment. Sectional drawing of the X-ray imaging device which concerns on 3rd Embodiment Sectional drawing for demonstrating the manufacturing method of the X-ray imaging device which concerns on 3rd Embodiment. Sectional drawing of the X-ray imaging device which concerns on 4th Embodiment Sectional drawing for demonstrating the manufacturing method of the X-ray imaging device which concerns on 4th Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Gate electrode 13 Photoelectric conversion part 14 i-type a-Si layer 16 Stopper 18 n ⁺ a-Si layer 31 Electrode 35 Storage capacity line 101 Metal reflective film 102 Phosphor film 103 Photoelectric conversion part 109 Power supply 204 Transparent electrode 205 p-type a -Si layer 206 i-type a-Si layer 207 n-type a-Si layer 210 X-ray charge converter 301 Insulating film 301A Separating layer 301B Separating layer 302 Insulating film (gate insulating film)
304 Contact hole 306 Passivation layer 307 Adhesion layer 308 Support substrate 309 Glass substrate 310 Amplifier 402 Switching TFT
404 Storage Capacitance 408 Signal Line 502 Auxiliary Electrode 606 Scan Line 607 Scan Line Drive Circuit 608 Shift Register

Claims (10)

  A phosphor film that converts incident X-rays into light, a photoelectric conversion unit that is provided on the phosphor film, converts light converted by the phosphor film into electric charge, and is provided on the photoelectric conversion unit. An insulating film; a plurality of switching elements provided corresponding to each of the plurality of pixels arranged in an array on the insulating film; and the switching element via a contact hole provided in the insulating film; An X-ray imaging apparatus comprising: a pixel electrode that electrically connects the photoelectric conversion unit. A signal line connected to each of the switching elements; a scanning line connected to each of the switching elements; and a scanning line driving circuit connected to the scanning lines and driving the switching elements. The X-ray imaging apparatus according to claim 1.   The photoelectric conversion unit includes a first conductive type first semiconductor layer provided on the phosphor film, a second conductive type second semiconductor layer provided on the first semiconductor layer, and the second The X-ray imaging apparatus according to claim 1, further comprising: a third semiconductor layer of a third conductivity type provided on the semiconductor layer.   The X-ray imaging apparatus according to claim 3, wherein a separation layer is further provided between each of the pixels of the second semiconductor layer and the third semiconductor layer.   The X-ray imaging apparatus according to claim 3, further comprising a separation layer between each of the pixels of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.   6. The X-ray imaging apparatus according to claim 3, wherein the third semiconductor layer is a buried semiconductor layer embedded in a surface of the second semiconductor layer.   The X-ray imaging according to claim 1, further comprising a storage capacitor electrode provided on the photoelectric conversion unit different from the switching element via the insulating film. apparatus.   The X-ray imaging apparatus according to claim 1, wherein the photoelectric conversion unit is made of amorphous silicon.   9. The switching device according to claim 1, wherein the switching element is a thin film transistor, and a cross-sectional shape of the gate electrode of the thin film transistor is such that a side on the photoelectric conversion unit side is longer than a side to be opposed. X-ray imaging device.   The X-ray imaging apparatus according to claim 1, wherein the substrate is a resin.

Images